Product status link
STPS3L60S
Product summary
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.)
3 A
60 V
150 °C
0.56 V
STPS3L60S
Datasheet
60 V power Schottky rectifier
Features
• Negligible switching losses
• Low thermal resistance
• Avalanche capability
• Low forward voltage drop
• ECOPACK ® 2 compliant
Applications
• Set-top box
• Battery charger
• DC/DC converter
• Telecom power
• Switching diode
Description
Schottky rectifier suited for SMPS and high frequency DC to DC converters.
Packaged in SMC, the STPS3L60S is intended for use in DC/DC battery chargers, lighting applications, telecom converters.
DS1596 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STPS3L60S
Characteristics
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T stg
T j
Repetitive peak reverse voltage
Forward rms current
Parameter
Average forward current , δ = 0.5 square wave
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature (1)
t t
T p p l
= 100 °C
= 10 ms sinusoidal
= 10 µs, T j
= 125 °C
1. (dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Value
60
10
3
75
115
-65 to +175
150
W
°C
A
A
°C
Unit
V
A
Symbol
R th(j-l)
Table 2. Thermal resistance parameter
Parameter
Junction to lead
Max. value
20
Unit
°C/W
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Symbol
I
R
(1)
V
F
(1)
Parameter
Reverse leakage current
Forward voltage drop
Table 3. Static electrical characteristics
Test conditions
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
I
I
V
F
F
R
= V
RRM
= 3 A
= 6 A
1. Pulse test: t p
= 380 µs, δ < 2%
-
-
-
Min.
-
-
-
Typ.
10
0.56
0.67
To evaluate the conduction losses, use the following equation:
P = 0.54 x I
F(AV)
+ 0.037 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Max.
55
15
0.7
0.65
0.94
0.76
Unit
µA mA
V
DS1596 - Rev 3 page 2/9
STPS3L60S
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus average forward current
2.5
PF(AV)(W)
δ = 0.05
2.0
δ = 0.1
δ = 0.2
δ
= 0.5
δ = 1
1.5
1.0
0.5
0.0
0. 0 0.5
1.0
T
1.5
IF(AV)(A)
2. 0 2.5
3. 0
δ =tp/T
3.5
tp
4. 0
Figure 2. Average forward current versus ambient temperature (δ = 0.5)
3.5
IF(AV)(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
δ =tp/T
T
25 tp
Rth-j-a) = Rth(j-l)
Rth-j-a) = 75 °C/W
50
Tamb(°C)
75 100 125 150
Figure 3. Normalized avalanche power derating versus pulse duration (T j
= 125 °C)
1
P
ARM
(tp)
P
ARM
(10 µs)
Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration
0.1
0.01
1. 0
Zth(j-l)/Rth(j-l)
0. 9
0. 8
0. 7
0. 6
0. 5
0. 4
0. 3
0. 2
0. 1
0. 0
1E -3
Single pulse
1E -2 tp(s )
1E -1 1E +0
0.001
1 10 100 1000
DS1596 - Rev 3 page 3/9
STPS3L60S
Characteristics (curves)
Figure 5. Reverse leakage current versus reverse voltage applied (typical values)
Figure 6. Junction capacitance versus reverse voltage applied (typical values)
5E +1
IR(mA)
1E +1
Tj =150°C
Tj =125°C
Tj =100°C
1E +0
1E -1
Tj =75°C
Tj =50°C
1E -2
1E -3
0 5
Tj =25°C
VR(V)
10 15 20 25 30 35 40 45 50 55 60
500
C( pF)
200
100
50
20
10
1 10
F= 1 MHz
Tj = 25 °C
VR(V)
100
Figure 7. Forward voltage drop versus forward current
(low level)
Figure 8. Forward voltage drop versus forward current
(high level)
IF(A)
5. 0
4. 5
4. 0
3. 5
3. 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
0. 0 0.1
0. 2
Tj = 150°C
(typical values)
0.3
0.4
0.5
0.6
Tj = 25°C
(Maximum values)
Tj = 125°C
(Maximum values)
0.7
0.8
VF(V)
0.9
1. 0
10
5
20
IF(A)
Tj = 150°C
(typical values)
Tj = 25°C (Maximum values)
Tj = 125°C (Maximum values)
2
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
1.6
Figure 9. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, e
Cu
: 35 μm)
160
R th(j-a)
(°C/W)
140
120
100
80
60
40
20
0
0.0
0.5
1.0
SMC
1.5
2.0
2.5
3.0
3.5
4.0
S
Cu
(cm²)
4.5
5.0
DS1596 - Rev 3 page 4/9
2
2.1
STPS3L60S
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
•
SMC package information
Epoxy meets UL94, V0
Figure 10. SMC package outline
E1
D
E
A1
A2 b
C
E2
L
DS1596 - Rev 3
Ref.
D
E
E1
E2
L
A1
A2 b c
Table 4. SMC package mechanical data
Dimensions
Millimeters
Min.
1.90
0.05
2.90
0.15
5.55
7.75
6.60
4.40
0.75
Max.
2.45
0.20
3.20
0.40
6.25
8.15
7.15
4.70
1.50
Inches (for reference only)
Min.
0.0748
0.0020
0.1142
0.0059
0.2185
0.3051
0.2598
0.1732
0.0295
Max.
0.0965
0.0079
0.1260
0.0157
0.2461
0.3209
0.2815
0.1850
0.0591
page 5/9
3.14
(0.124)
Figure 11. SMC recommended footprint
1.54
(0.061)
5.11
(0.201)
1.54
(0.061)
8.19
(0.323) millimeters
(inches)
STPS3L60S
SMC package information
DS1596 - Rev 3 page 6/9
3
STPS3L60S
Ordering Information
Ordering information
Order code
STPS3L60S
Marking
S36
Table 5. Ordering information
Package
SMC
Weight
0.245 g
Base qty.
2500
Delivery mode
Tape and reel
DS1596 - Rev 3 page 7/9
STPS3L60S
Revision history
Date
July-2003
13-Nov-2018 3
Table 6. Document revision history
Version
2
Changes
Previous release.
Updated cover page.
Removed figure 3, figure 4 and figure 5.
Updated Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) , Section 1.1 Characteristics (curves)
and
Table 5. Ordering information
.
Minor text changes to improve readability.
DS1596 - Rev 3 page 8/9
STPS3L60S
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS1596 - Rev 3 page 9/9
