STPS80150C
Datasheet
150 V power Schottky rectifier
A1
A2
K
TO-247
A1
K
A2
I
F(AV)
V
RRM
T j(max.)
V
F(typ.)
Product status
STPS80150C
Product summary
2 x 40 A
150 V
175 °C
0.68 V
Features
• High junction temperature capability
• Low leakage current
• Good trade off between leakage current and forward voltage drop
• Low thermal resistance
• High frequency operation
• ECOPACK ® 2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• Telecom power
Description
This dual center tab Schottky rectifier is optimized for high frequency switched mode power supplies.
Packaged in TO-247, the STPS80150C combines high current rating and low volume to enhance both reliability and power density of the application.
DS3633 - Rev 2 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
DS3633 - Rev 2
STPS80150C
Characteristics
Characteristics
Table 1. Absolute ratings (limiting values, per diode at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
Repetitive peak reverse voltage
Forward rms current
Parameter
I
F(AV)
I
FSM
P
ARM
T stg
T j
Average forward current, δ = 0.5, square wave
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
C
= 150 °C
T
C
= 140 °C t p t p
= 10 ms sinusoidal
= 10 µs, T j
Per diode
Per device
= 125 °C
1. (dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Value
150
80
40
80
500
2750
-65 to +175
+175
Unit
V
A
A
A
W
°C
°C
Symbol
R th(j-c)
R th(c)
Junction to case
Coupling
Table 2. Thermal resistance parameters
Parameter
Per diode
Total
Value
Max.
0.7
0.5
0.3
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT j (diode1)
= P
(diode1)
x R th(j-c)
(per diode) + P
(diode2)
x R th(c)
Symbol
I
R
(1)
V
F
(2)
Table 3. Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Forward voltage drop
Test conditions
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
I
I
V
F
F
R
= V
RRM
= 40 A
= 80 A
-
-
-
-
Min.
-
-
1. Pulse test: t p
= 5 ms, δ < 2%
2. Pulse test: t p
=380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.62 x I
F(AV)
+ 0.003 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Typ.
5
6
0.80
0.68
0.90
0.80
Max.
30
20
0.84
0.74
0.96
0.86
Unit
µA mA
V page 2/10
STPS80150C
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus average forward current (per diode)
40
35
30
25
20
15
10
5
0
0
P
F(AV)
(W)
5
δ=0.05
10 15
δ=0.1
20 25
δ=0.2
δ =tp/T
30
T
35 tp
δ=0.5
40
δ=1.0
I
F(AV)
(A)
45 50
Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode)
45
I
F(AV)
(A)
40
35
30
25
20
15
10
5
T
0
0
δ =tp/T
25 tp
50 75
R th(j-a)
=R th(j-c)
R th(j-a)
=15°C/W
T amb
(°C)
100 125 150 175
Figure 3. Normalized avalanche power derating versus pulse duration (T j
= 125 °C)
1
P
ARM
(tp)
P
ARM
(10 µs)
0.1
0.01
0.001
1 10 100 1000
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/ R
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
Single pulse
1.E-02 1.E-01 1.E+00
Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode)
1.E+05
I
R
(µA)
1.E+04
1.E+03
1.E+02
1.E+01
T j
= 150 °C
T j
= 125 °C
T j
= 100 °C
T j
= 75 °C
T j
= 50 °C
T j
= 25 °C
1.E+00
1.E-01
0 25 50
V
R
(V)
75 100 125 150
Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode)
10000
C(pF)
F = 1 MHz
VOSC = 30 mV
Tj = 25 °C
RMS
1000
100
1 10 100
V
R
(V)
1000
DS3633 - Rev 2 page 3/10
Figure 7. Forward voltage drop versus forward current (per diode)
100.0
I
F
(A)
T j
= 125 °C
(maximum values)
10.0
T j
= 125 °C
(typical values)
T j
= 25 °C
(maximum values)
1.0
0.1
0.0
0.1
0.2
0.3
V
F
(V)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
STPS80150C
Characteristics (curves)
DS3633 - Rev 2 page 4/10
2
STPS80150C
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS3633 - Rev 2 page 5/10
STPS80150C
TO-247 package information
2.1
•
•
•
•
TO-247 package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 N·m
Maximum torque value: 1.0 N·m
Figure 8. TO-247 package outline
E
S
∅
R
D
L2
L
L1
1 2 b1
3 b2 b e
A1
A
Heat-sink plane
∅
P c
3 2
Back view
1
DS3633 - Rev 2 page 6/10
DS3633 - Rev 2
STPS80150C
TO-247 package information
Ref.
c
D
E e
L
A
A1 b b1 b2
L1
L2
ØP
ØR
S
Min.
0.40
19.85
15.45
5.30
14.20
3.70
4.85
2.20
1.00
2.00
3.00
3.55
4.50
5.30
Table 4. TO-247 package mechanical data
Dimensions
Millimeters
Typ.
Inches (for reference only)
Typ.
5.45
Max.
0.80
20.15
15.75
5.60
14.80
4.30
5.15
2.60
1.40
2.40
3.40
Min.
0.015
0.781
0.608
0.209
0.559
0.145
0.191
0.086
0.039
0.078
0.118
0.215
18.50
0.728
5.50
3.65
5.50
5.70
0.139
0.177
0.209
0.216
Max.
0.031
0.793
0.620
0.220
0.582
0.169
0.203
0.102
0.055
0.094
0.133
0.143
0.217
0.224
page 7/10
3
STPS80150C
Ordering information
Ordering information
Order code
STPS80150CW
Marking
STPS80150CW
Table 5. Order code
Package
TO-247
Weight
4.36 g
Base qty.
30
Delivery mode
Tube
DS3633 - Rev 2 page 8/10
STPS80150C
Revision history
Table 6. Document revision history
Date
2003
07-Jun-2018
Revision
1 First issue.
2
Changes
Updated Table 1. Absolute ratings (limiting values, per diode at 25 °C, unless otherwise specified)
and Figure 3. Normalized avalanche power derating versus pulse duration (T j
= 125 °C) .
DS3633 - Rev 2 page 9/10
STPS80150C
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© 2018 STMicroelectronics – All rights reserved
DS3633 - Rev 2 page 10/10
