STD134N4F7AG
Automotive-grade Nchannel 40 V, 2.5 mΩ typ., 80 A
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
G(1)
D(2, TAB)
S(3)
Order code
STD134N4F7AG
Features
Order code V
DS
R
DS(on) max.
I
D
P
TOT
STD134N4F7AG 40 V
3.5 mΩ
80 A 134 W
AEC-Q101 qualified
Among the lowest R
Excellent FoM (figure of merit)
Low C rss
DS(on)
on the market
/C iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STr ipFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
AM01475v1_Tab
Table 1: Device summary
Marking Package
134N4F7 DPAK
Packing
Tape and reel
December 2016 DocID030109 Rev 1
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STD134N4F7AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
DPAK (TO-252) type A2 package information................................. 10
DPAK (TO-252) packing information ............................................... 13
5 Revision history ............................................................................ 15
2/16 DocID030109 Rev 1
STD134N4F7AG
1 Electrical ratings
Symbol
V
DS
V
GS
I
D
(1)
I
DM
(2)
P
TOT
E
AS
(3)
T stg
T
J
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Single pulse avalanche energy
Storage temperature range
Operating junction temperature range
Notes:
(1)
Current is limited by package
(2)
Pulse width is limited by safe operating area
(3)
Starting T j
= 25 °C, I
D
= 40 A, V
DD
= 20 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Electrical ratings
Value
40
±20
80
80
320
134
325
-55 to 175
Unit
V
V
A
A
W mJ
°C
Value
1.12
50
Unit
°C/W
DocID030109 Rev 1 3/16
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, V
DS
= 40 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 40 V,
T case
= 125 °C (1)
V
R
I
GSS
GS(th)
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 20 V, I
D
= 80 A,
V
GS
= 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 20 V, I
D
= 40 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
STD134N4F7AG
Min. Typ. Max. Unit
40 V
1
µA
100
±100 nA
4 V
2.5 3.5 mΩ
2
Min. Typ. Max. Unit
-
-
-
-
-
2790
890
60
41
15
-
-
-
-
- pF nC
- 11 -
Min. Typ. Max. Unit
-
-
-
18
17.5
26
-
-
- ns
- 13 -
4/16 DocID030109 Rev 1
STD134N4F7AG
Table 7: Source-drain diode
Symbol Parameter
I
SD
(1)
Source-drain current
I
SDM
(1)
Source-drain current (pulsed)
V
SD
(2)
Forward on voltage V
GS
Test conditions
= 0 V, I
SD
= 80 A t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 32 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
-
-
37
28.5
1.5
80
320
1.2
A
A
A
V ns nC
Notes:
(1)
Current is limited by package
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID030109 Rev 1 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD134N4F7AG
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
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STD134N4F7AG
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
DocID030109 Rev 1 7/16
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STD134N4F7AG
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
8/16 DocID030109 Rev 1
STD134N4F7AG
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID030109 Rev 1 9/16
Package information
4.1 DPAK (TO-252) type A2 package information
Figure 19: DPAK (TO-252) type A2 package outline
STD134N4F7AG
10/16 DocID030109 Rev 1
0068772_type-A2_rev21
STD134N4F7AG
Dim.
D1
E
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
A
A1
A2 b
Package information
Table 8: DPAK (TO-252) type A2 mechanical data mm
Min. Typ. Max.
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.60
0.65
0.60
0°
5.10
5.20
2.28
2.80
0.80
0.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
3.00
0.95
1.00
8°
DocID030109 Rev 1 11/16
Package information STD134N4F7AG
Figure 20: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
12/16 DocID030109 Rev 1
STD134N4F7AG
4.2 DPAK (TO-252) packing information
Figure 21: DPAK (TO-252) tape outline
Package information
DocID030109 Rev 1 13/16
Package information
Figure 22: DPAK (TO-252) reel outline
STD134N4F7AG
14/16
Dim.
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
3.9
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID030109 Rev 1
STD134N4F7AG
5 Revision history
Date
05-Dec-2016
Revision
Table 10: Document revision history
Changes
1 First release
Revision history
DocID030109 Rev 1 15/16
STD134N4F7AG
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16/16 DocID030109 Rev 1
