STMicroelectronics STL220NS6F7 Datasheet
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STL220NS6F7 N-channel 60 V, 1.4 mΩ typ., 250 A STripFET™ F7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 package Datasheet - preliminary data Prerelease product(s) Features Order code VDS RDS(on) max ID STL220NS6F7 60 V 1.6 mΩ 250 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Embedded Schottky diode Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram D(5, 6, 7, 8) Description 8 7 6 5 1 2 3 4 This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(4) S(1, 2, 3) Top View AM15540v3 Table 1: Device summary Order code STL220NS6F7 August 2015 Marking 220NS6F7 Package PowerFLAT DocID028256 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. TM Packaging 5x6 Tape and reel 1/13 www.st.com Contents STL220NS6F7 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 3 Test circuits ...................................................................................... 5 4 Package information ........................................................................ 6 4.1 5 Packing information ......................................................................... 9 5.1 PowerFLAT™ 5x6 packing information ........................................... 10 Revision history .............................................................................. 12 Prerelease product(s) 6 PowerFLAT 5x6 type S-C package information ................................ 7 2/13 DocID028256 Rev 1 STL220NS6F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 250 A ID(1) Drain current (continuous) at TC = 100 °C 177 A Drain current (pulsed) 1000 A IDM(1)(2) ID(3) Drain current (continuous) at Tpcb = 25 °C 40 A ID(3) Drain current (continuous) at Tpcb = 100 °C 28.5 A Drain current (pulsed) 160 A Total dissipation at TC = 25 °C 187 W Total dissipation at Tpcb = 25 °C 4.8 W -55 to 175 °C IDM(2)(3) PTOT (1) PTOT(3) Tj Prerelease product(s) Parameter Max. operating junction temperature Tstg Storage temperature Notes: (1) This value is rated according to Rthj-c (2) Pulse width limited by safe operating area (3) This value is rated according to Rthj-pcb Table 3: Thermal data Symbol Rthj-pcb (1) Rthj-case Parameter Value Unit Thermal resistance junction-pcb max. 31.3 °C/W Thermal resistance junction-case max. 0.8 °C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec DocID028256 Rev 1 3/13 Electrical characteristics 2 STL220NS6F7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current VGS = 0 V VDS = 60 V 500 µA IGSS Gate-body leakage current VGS = 20 V, VDS = 0 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 20 A 0.0016 Ω V(BR)DSS 60 V 2 0.0014 Prerelease product(s) Table 5: Dynamic Symbol Ciss Parameter Test conditions Min. Typ. Max. Unit - 7200 - pF - 3580 - pF - 130 - pF - 100 - nC - TBD - nC - TBD - nC Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 30 V, ID = 40 A, VGS = 10 V Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time Rise time VDD = 30 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V Turn-off delay time Fall time Min. Typ. Max. Unit - TBD - ns - TBD - ns - ns - ns - TBD TBD - Table 7: Source-drain diode Symbol VSD(1) trr Parameter Test conditions Forward on voltage ISD = 20 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ID = 40 A, di/dt = 100 A/µs VDD = 48 V Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4/13 DocID028256 Rev 1 Min. Typ. - Max. Unit 0.7 V - TBD ns - TBD nC - TBD A STL220NS6F7 3 Test circuits Test circuits Prerelease product(s) Figure 2: Switching times test circuit for resistive load Figure 4: Test circuit for inductive load switching and diode recovery times Figure 6: Unclamped inductive waveform DocID028256 Rev 1 Figure 3: Gate charge test circuit Figure 5: Unclamped inductive load test circuit Figure 7: Switching time waveform 5/13 Package information 4 STL220NS6F7 Package information Prerelease product(s) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/13 DocID028256 Rev 1 STL220NS6F7 4.1 Package information PowerFLAT 5x6 type S-C package information Prerelease product(s) Figure 8: PowerFLAT™ 5x6 type C package outline DocID028256 Rev 1 7/13 Package information STL220NS6F7 Table 8: PowerFLAT™ 5x6 type C mechanical data mm Dim. Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 D 0.50 5.20 E Prerelease product(s) Typ. 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 Figure 9: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) 8/13 DocID028256 Rev 1 STL220NS6F7 5 Packing information Packing information Prerelease product(s) Figure 10: PowerFLAT™ 5x6 tape (dimensions are in mm) Figure 11: PowerFLAT™ 5x6 package orientation in carrier tape DocID028256 Rev 1 9/13 Packing information STL220NS6F7 Prerelease product(s) Figure 12: PowerFLAT™ 5x6 reel 5.1 PowerFLAT™ 5x6 packing information Figure 13: PowerFLAT™ 5x6 tape 10/13 DocID028256 Rev 1 STL220NS6F7 Packing information Figure 14: PowerFLAT™ 5x6 package orientation in carrier tape Prerelease product(s) Figure 15: PowerFLAT™ 5x6 reel DocID028256 Rev 1 11/13 Revision history 6 STL220NS6F7 Revision history Table 9: Document revision history Revision 20-Aug-2015 1 Prerelease product(s) Date 12/13 DocID028256 Rev 1 Changes First release. STL220NS6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. Prerelease product(s) ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID028256 Rev 1 13/13 ">
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