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BDX53B - BDX53C
BDX54B - BDX54C
Complementary power Darlington transistors
Features
■
■
■
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
Application
■
■
Audio amplifiers
Linear and switching industrial equipment
Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
BDX53B
BDX53C
BDX54B
BDX54C
Marking
BDX53B
BDX53C
BDX54B
BDX54C
R1 typ.= 10 k Ω
Package
TO-220
R2 typ.= 150 Ω
Packaging
Tube
October 2007 Rev 4 1/7 www.st.com
7
Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C
Note:
Table 2.
Absolute maximum ratings
Value
BDX53B BDX53C Symbol Parameter NPN
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (repetitive)
Base current
Total dissipation at T c
= 25°C
Storage temperature
Max. operating junction temperature
For PNP types voltage and current values are negative.
PNP BDX54B BDX54C
80
80
5
8
12
0.2
60
-65 to 150
150
100
100
Unit
A
A mA
W
V
V
V
°C
°C
2/7
BDX53B - BDX53C - BDX54B - BDX54C Electrical characteristics
Note:
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter Test conditions Min.
Typ.
Max.
Unit
V
CEO(sus)
(1)
I
CBO
Collector-emitter sustaining voltage (I
B
= 0)
Collector cut-off current
(I
E
= 0)
I
C
= 100 mA for BDX53B - BDX54B for BDX53C - BDX54C
V
CB
= 80 V for BDX53B - BDX54B
V
CB
= 100 V for BDX53C - BDX54C
80
100
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 40 V for BDX53B - BDX54B
V
CE
= 50 V for BDX53C - BDX54C
V
V
I
EBO
CE(sat)
(1)
BE(sat)
(1)
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
Collector-emitter saturation voltage
I
C
= 3 A; I
B
= 12 mA
Base-emitter saturation voltage
I
C
= 3 A; I
B
= 12 mA h
FE
(1)
DC current gain I
C
= 3 A; V
V
F
(1)
Diode forward voltage
I
F
= 3 A;
I
F
= 8 A;
1.
Pulsed: pulse duration = 300
µ s, duty cycle 1.5%
CE
= 3 V 750
For PNP types voltage and current values are negative.
1.8
2.5
0.2
0.2
0.5
0.5
2
2
2.5
2.5
V
V
V
V mA mA mA mA mA
V
V
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Package mechanical data
3 Package mechanical data
BDX53B - BDX53C - BDX54B - BDX54C
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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BDX53B - BDX53C - BDX54B - BDX54C
Dim
E e e1
F
H1
J1
L
L1
L20
L 3 0
∅
P
Q
A b b 1 c
D
D1
Package mechanical data
TO-220 mechanical data
Min
4.40
0.61
1.14
0.4
9
15.25
10
2.40
4.
9 5
1.2
3
6.20
2.40
1 3
3 .50
3 .75
2.65
mm
Typ
1.27
16.40
2 8 .
9 0
Max
4.60
0.
88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .
93
3 .
8 5
2.
9 5
Min
0.17
3
0.024
0.044
0.01
9
0.6
0.
393
0.0
9 4
0.1
9 4
0.04
8
0.244
0.0
9 4
0.511
0.1
3 7
0.147
0.104
inch
Typ
0.050
0.645
1.1
3 7
Max
0.1
8 1
0.0
3 4
0.066
0.027
0.62
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
5/7
Revision history BDX53B - BDX53C - BDX54B - BDX54C
Table 4.
Date
Document revision history
Revision
09-Sep-2004 3
23-Oct-2007 4
Changes
Technology change from epibase to planar (PCN APM-
PWR/07/2417 and APM-PWR/07/2615)
6/7
BDX53B - BDX53C - BDX54B - BDX54C Revision history
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