Vishay VS-80PF120 Data Sheet
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VS-80PF(R)...(W) Series
Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A
80PF(R)...
DO-5 (DO-203AB)
80PF(R)...W
DO-5 (DO-203AB)
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
80 A
DO-5 (DO-203AB)
Single
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
T
C
I 2 t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
80
140
126
1500
1570
11 250
10 230
400 to 1200
-55 to +180
UNITS
A
°C
A
A
A 2 s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-80PF(R)...(W)
VOLTAGE
CODE
40
80
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
960
1440
I
RRM
MAXIMUM
AT T
J
= 150 °C mA
9
Revision: 11-Jan-18 1 Document Number: 93526
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-80PF(R)...(W) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
Maximum RMS forward current I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I
2 t for fusing
Maximum I
2 t for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
I
FSM
I
2 t
I
2 t
V
F(TO) r f
V
FM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % V
RRM reapplied
No voltage reapplied
Sinusoidal half wave, initial T
J
= 150 °C t = 10 ms t = 8.3 ms
100 % V
RRM reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I pk
= 220 A, T
J
= 25 °C, t p
= 400 μs rectangular wave
VALUES
80
140
126
1500
1570
1260
1320
11 250
10 230
7950
7200
112 500
0.73
3.0
1.40
UNITS
A
°C
A
A
A
2 s
A
2 s
V m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R thJC
R thCS
DC operation
TEST CONDITIONS
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut
(1)
Lubricated threads, tighting on nut
(1)
Allowable mounting torque
Not lubricated threads, tighting on Hexagon (2)
Lubricated threads, tighting on Hexagon (2)
Approximate weight
Case style See dimensions - link at the end of datasheet
Notes
(1) Recommended for pass-through holes
(2) Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink
VALUES
-55 to +180
UNITS
°C
0.30
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
N · m
(lbf · in) g
0.56
oz.
DO-5 (DO-203AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
180°
120°
90°
60°
30°
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
TEST CONDITIONS
T
J
= T
J
maximum
UNITS
Note
• The table above shows the increment of thermal resistance R thJC
when devices operate at different conduction angles than DC
K/W
Revision: 11-Jan-18 2 Document Number: 93526
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-80PF(R)...(W) Series
Vishay Semiconductors
180
170
160
150
80PF(R) Series
RthJC = 0.3 K/W
Conduction Angle
140
130
120 30°
60°
90°
120°
180°
110
0 10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
180
170
80PF(R) Series
RthJC (DC) = 0.3 K/W
160
Conduction Period
150
30°
140
60°
90°
130
120°
180° DC
120
0 20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
140
120
100
80
180°
120°
90°
60°
30°
RMS Limit
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
1.5 K/W
2 K/W
60
3 K/W
40 5 K/W
Conduction Angle
20
80PF(R) Series
Tj = 180°C
0
0 10 20 30 40 50 60 70 0
Average Forward Current (A)
30 60 90 120 150 180
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
140
120
100
80
60
DC
180°
120°
90°
60°
30°
RMS Limit
40
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
1.5 K/W
2 K/W
3 K/W
5 K/W Conduction Period
20 80PF(R) Series
Tj = 180°C
0
0 20 40 60 80 0
Average Forward Current (A)
30 60 90 120 150 180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18 3 Document Number: 93526
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1400
1300
1200
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1100
1000
900
800
700
600
80PF(R) Series
500
400
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1600
1400
1200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150°C
No Voltage Reapplied
Rated Vrrm Reapplied
1000
800
600
400 80PF(R) Series
200
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
VS-80PF(R)...(W) Series
Vishay Semiconductors
100
10
Tj = 25°C
Tj = 180°C
80PF(R) Series
1
0 1 2
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
3
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
0.1
80PF(R) Series
0.01
0.0001 0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
Fig. 8 - Thermal Impedance Z thJC
Characteristics
Revision: 11-Jan-18 4 Document Number: 93526
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ORDERING INFORMATION TABLE
VS-80PF(R)...(W) Series
Vishay Semiconductors
Device code VS80 PF R 120 W
1 2 3 4 5 6
1
2
5
6
3
4
Vishay Semiconductors product
80 = standard device
82 = isolated lead on standard terminal with silicone sleeve available for 1200 V only
(red = reverse polarity)
(blue = normal polarity)
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
Dimensions
LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95345
Revision: 11-Jan-18 5 Document Number: 93526
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Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W), and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES
in millimeters
6.45 MIN.
4.2 MAX.
Ø 3
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16 1 Document Number: 95345
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Outline Dimensions
Vishay Semiconductors
DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W), AND 95PF(R)...(W) SERIES
in millimeters
2.05 MAX.
2.4 REF.
11.45 MAX.
11 ± 0.4
1/4"-28-UNF-2A
Plastic cap.
25.4 MAX.
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16 2 Document Number: 95345
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DIMENSIONS FOR 52PF(R), 82PF(R), AND 97PF(R) SERIES
in millimeters
Outline Dimensions
Vishay Semiconductors
11.20 - 12.20
Ø 6.80 - 7.00
6.6 mm
2
external lead with blue or red sleeve insulation
Plastic cap.
2.4 REF.
115.00 - 123.00
11.05 - 11.45
10.60 - 11.40
1/4"-28-UNF-2A
127.40 - 134.40
Revision: 20-Apr-16 3 Document Number: 95345
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Revision: 01-Jan-2022 1 Document Number: 91000
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