STGWA80H65DFBAG
Datasheet
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
in a TO-247 long leads
Features
•
•
•
TO-247 long leads
C(2, TAB)
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature: TJ = 175 °C
•
Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A
•
•
•
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
•
Soft and very fast recovery antiparallel diode
Applications
G(1)
•
•
PFC
High frequency converters
Description
E(3)
G1C2TE3_diode
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGWA80H65DFBAG
Product summary
Order code
STGWA80H65DFBAG
Marking
G80H65DFBAG
Package
TO-247 long leads
Packing
Tube
DS14160 - Rev 1 - December 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA80H65DFBAG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0 V)
Value
Unit
650
V
Continuous collector current at TC = 25 °C
120(1)
Continuous collector current at TC = 100 °C
80
Pulsed collector current (tp = 1 ms)
240
Gate-emitter voltage
±20
Transient gate-emitter voltage (tp ≤ 10 μs)
±30
Continuous forward current at TC = 25 °C
120(1)
Continuous forward current at TC = 100 °C
80
IFP(2)
Pulsed forward current
240
A
PTOT
Total power dissipation at TC = 25 °C
535
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
IC
ICP(2)
VGE
IF
TJ
A
A
V
A
1. Current limited by package.
2. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
RthJC
RthJA
DS14160 - Rev 1
Parameter
Thermal resistance, junction-to-case IGBT
0.28
Thermal resistance, junction-to-case diode
0.41
Thermal resistance, junction-to-ambient
50
°C/W
°C/W
page 2/14
STGWA80H65DFBAG
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 3. Static characteristics
Symbol
VCE(sat)
VF
VGE(th)
Parameter
Test conditions
Collector-emitter saturation
voltage
Forward on-voltage
Typ.
Max.
VGE = 15 V, IC = 80 A
1.65
2.0
VGE = 15 V, IC = 80 A, TJ = 125 °C
1.8
VGE = 15 V, IC = 80 A, TJ = 175 °C
1.9
IF = 80 A
1.9
IF = 80 A, TJ = 125 °C
1.55
IF = 80 A, TJ = 175 °C
1.4
VCE = VGE, IC = 1 mA
Gate threshold voltage
Min.
4.5
5.5
Unit
V
V
6.5
V
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
DS14160 - Rev 1
Parameter
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 80 A, VGE = 0 to 15 V
Min.
Typ.
Max.
Unit
-
10460
-
pF
-
390
-
pF
-
215
-
pF
-
453
-
nC
page 3/14
STGWA80H65DFBAG
Electrical characteristics
Table 5. Switching characteristics (inductive load)
Symbol
td(off)
tr
di/dt(on)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-off delay time
-
360
-
ns
Current rise time
-
84
-
ns
Turn-on current slope
-
720
-
A/μs
Eon (1)
Turn-on switching energy
VCC = 400 V, IC = 80 A,
-
3.26
-
mJ
td(off)
Turn-off delay time
VGE = 15 V, RG = 10 Ω
-
360
-
ns
Current fall time
-
66
-
ns
Turn-off switching energy
-
2.33
-
mJ
Total switching energy
-
5.59
-
mJ
Turn-off delay time
-
375
-
ns
Current rise time
-
90
-
ns
Turn-on current slope
-
690
-
A/μs
tf
Eoff (2)
Ets
td(off)
tr
di/dt(on)
Eon(1)
Turn-on switching energy
VCC = 400 V, IC = 80 A,
-
5.24
-
mJ
td(off)
Turn-off delay time
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
-
375
-
ns
Current fall time
-
65
-
ns
Turn-off switching energy
-
2.56
-
mJ
Total switching energy
-
7.8
-
mJ
Min.
Typ.
Max.
Unit
-
64
-
ns
tf
Eoff (2)
Ets
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 80 A, VR = 400 V,
-
0.7
-
μC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1000 A/μs
-
15
-
A
Err
Reverse recovery energy
-
92
-
μJ
trr
Reverse recovery time
-
120
-
ns
-
3.7
-
μC
-
47
-
A
-
595
-
μJ
Qrr
DS14160 - Rev 1
Parameter
Reverse recovery charge
Irrm
Reverse recovery current
Err
Reverse recovery energy
IF = 80 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/μs,
TJ = 175 °C
page 4/14
STGWA80H65DFBAG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Total power dissipation vs temperature
PTOT
(W)
GADG211120221158PDT
500
Figure 2. Collector current vs temperature
IC
(A)
150
VGE ≥ 15 V, TJ ≤ 175 °C
400
120
300
90
200
60
100
30
0
25
75
125
175
TC (°C)
Figure 3. Typical output characteristics (TJ = 25 °C)
IC
(A)
GADG211120221159OC25
VGE = 15 V
13 V
11 V
250
0
25
100
50
50
3
4
5
7V
VCE (V)
Figure 5. Typical VCE(sat) vs temperature
VCE(sat)
(V)
2.0
GADG211120221201VCET
VGE=15 V
0
0
GADG211120221200OC175
11 V
13 V
VGE = 15 V
9V
7V
1
2
3
VCE(sat)
(V)
2.5
IC = 40 A
5
VCE (V)
GADG211120221201VCEC
VGE =15 V
TJ= 25 °C
TJ= 175 °C
2.0
TJ= -55 °C
1.5
1.4
1.0
1.2
DS14160 - Rev 1
4
IC = 80 A
1.6
TC (°C)
Figure 6. Typical VCE(sat) vs collector current
3.0
1.8
1.0
-75
175
150
9V
2
125
IC
(A)
200
1
75
Figure 4. Typical output characteristics (TJ = 175 °C)
100
0
0
VGE ≥ 15 V, TJ ≤ 175 °C
250
200
150
GADG211120221159CCT
0.5
-25
25
75
125
175
TJ (°C)
0.0
0
50
100
150
200
250
IC (A)
page 5/14
STGWA80H65DFBAG
Electrical characteristics (curves)
Figure 7. Forward bias safe operating area
IC
(A)
GADG211120221301CCS
IC
(A) Rectangular current shape (duty cycle = 0.5,
VCC= 400 V, RG = 10 Ω,
VGE= 0 to 15 V , Tj = 175 °C
160
GADG211120221204FSOA
ICP
tp= 1 µs
10 2
tp= 10 µs
VCE(sat) limit
tp= 100 µs
80
tp= 1 ms
40
Single pulse, TC = 25 °C,
TJ ≤ 175 °C, VGE = 15 V
10 1
VCE (V)
10 2
Figure 9. Typical transfer characteristics
IC
(A)
GADG211120221205TCH
250
120
V(BR)CES
10 1
10 0
10 0
Figure 8. Collector current vs switching frequency
TC= 80 °C
TC= 100 °C
0
10 0
10 1
Figure 10. Typical diode VF vs forward current
VF
(V)
GADG211120221205DVF
3.0
VCE=5 V
TJ= -55 °C
2.5
200
2.0
TJ= 175 °C
150
1.5
TJ= 175 °C
100
1.0
TJ= 25 °C
TJ= 25 °C
50
0
5
f (kHz)
10 2
0.5
6
7
8
9
10
VGE (V)
Figure 11. Normalized VGE(th) vs temperature
VGE(th)
(Norm.)
GADG211120221211NVGE
VGE = VCE
IC = 1 mA
1.2
0.0
0
50
100
150
200
250
IF (A)
Figure 12. Normalized V(BR)CES vs temperature
V(BR)CES
(Norm.)
GADG211120221211NVBR
IC = 1 mA
1.1
1.0
1.0
0.8
0.9
0.6
0.4
-75
DS14160 - Rev 1
-25
25
75
125
175
TJ (°C)
0.8
-75
-25
25
75
125
175
TJ (°C)
page 6/14
STGWA80H65DFBAG
Electrical characteristics (curves)
Figure 13. Typical capacitance characteristics
C
(pF)
GADG211120221218GCGE
VGE
(V) VCC = 520 V, IC = 80 A, IG = 8 mA
GADG211120221212CVR
Cies
10 4
Figure 14. Typical gate charge characteristics
16
12
10
3
8
10 2
10 1
10-1
Coes
Cres
4
VCE (V)
0
0
f = 1 MHz
100
101
102
Figure 15. Typical switching energy vs collector current
GADG211120221218SLC
E
(mJ) VCC = 400 V, RG = 10 Ω,
VGE = 15 V, TJ=175 ℃
Eon
5
100
200
300
400
Qg (nC)
Figure 16. Typical switching energy vs temperature
GADG211120221219SLT
E
(mJ) VCC = 400 V, RG = 10 Ω,
VGE = 15 V, IC = 80 A
6
5
4
500
Eon
4
3
Eoff
3
2
1
0
0
Eoff
2
1
20
40
60
80
IC (A)
Figure 17. Typical switching energy vs collector emitter
voltage
GADG211120221251SLV
E
(mJ) IC = 80 A,TJ=175 ℃
Eon
RG= 10 Ω, VGE = 15 V
7
0
-25
25
75
125
175
TJ (°C)
Figure 18. Typical switching energy vs RG
GADG211120221230SLG
E
(mJ) V = 400 V, V = 15 V, I = 80 A,
GE
C
CC
TJ = 175 ℃
8
6
Eon
6
5
Eoff
4
4
Eoff
3
2
2
1
0
100
DS14160 - Rev 1
200
300
400
500
VCE (V)
0
0
10
20
30
40
RG (Ω)
page 7/14
STGWA80H65DFBAG
Electrical characteristics (curves)
Figure 19. Typical switching times vs collector current
GADG231120221309STC
t
(ns) VCC = 400 V, VGE = 15 V, RG = 10 Ω,
TJ = 175 ℃
Figure 20. Typical switching times vs gate resistance
GADG231120221316STR
t
(ns) VCC = 400 V, VGE = 15 V, IC = 80 A,
TJ = 175 ℃
td(off)
td(off)
10 3
10 2
td(on)
td(on)
tr(i)
10 2
tf
tf
10 1
0
tr(i)
20
40
60
80
IC (A)
Figure 21. Typical reverse recovery current vs diode
current slope
Irrm
(A)
GADG211120221232RRC
8
10 1
0
trr
(ns)
130
50
120
49
110
48
100
47
90
1400
2000
2600
di/dt (A/µs)
Figure 23. Typical reverse recovery charge vs diode
current slope
Qrr
(µC)
GADG211120221233RRQ
80
800
40
RG (Ω)
GADG211120221232RRT
8
1200 1600 2000 2400 2800
Err
(mJ)
8
di/dt (A/µs)
GADG211120221234RRE
8
700
3.8
650
3.7
600
DS14160 - Rev 1
30
Figure 24. Typical reverse recovery energy vs diode
current slope
3.9
3.6
800
20
Figure 22. Typical reverse recovery time vs diode current
slope
51
46
800
10
1400
2000
2600
di/dt (A/µs)
550
800
1400
2000
2600
di/dt (A/µs)
page 8/14
STGWA80H65DFBAG
Electrical characteristics (curves)
Figure 25. Maximum transient thermal impedance for
IGBT
ZthJC
(°C/W)
GADG211120221235ZTH_IGBT
Figure 26. Maximum transient thermal impedance for
diode
ZthJC
(°C/W)
GADG211120221236ZTH_diode
duty=0.5
duty=0.5
10 -1
10 -1
4
4
0.05
3
3
0.05
2
2
10 -2
10 -2
RthJC = 0.28 ℃/W
duty = ton / T
RthJC = 0.41 ℃/W
duty = ton / T
Single pulse
Single pulse
10
ton
10
DS14160 - Rev 1
ton
T
-3
-6
10
-5
10
-4
10
-3
10
-2
10
-1
tp (s)
10
T
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10 -1
tp (s)
page 9/14
STGWA80H65DFBAG
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
3.1
TO-247 long leads package information
Figure 27. TO-247 long leads package outline
8463846_3
DS14160 - Rev 1
page 10/14
STGWA80H65DFBAG
TO-247 long leads package information
Table 7. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
P
3.50
Q
5.60
S
6.05
aaa
DS14160 - Rev 1
4.30
3.60
3.70
6.00
6.15
6.25
0.04
0.10
page 11/14
STGWA80H65DFBAG
Revision history
Table 8. Document revision history
DS14160 - Rev 1
Date
Revision
06-Dec-2022
1
Changes
First release.
page 12/14
STGWA80H65DFBAG
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
3
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS14160 - Rev 1
page 13/14
STGWA80H65DFBAG
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DS14160 - Rev 1
page 14/14
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