STS10DN3LH5
Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STS10DN3LH5
30 V
0.021 Ω
10 A
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
Very low switching gate charge
■
High avalanche ruggedness
■
Low gate drive power losses
SO-8
Application
■
Switching applications
Description
Figure 1.
Internal schematic diagram
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STS10DN3LH5
10DD3L
SO-8
Tape and reel
May 2009
Doc ID 15624 Rev 1
1/13
www.st.com
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Contents
STS10DN3LH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Doc ID 15624 Rev 1
STS10DN3LH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-Source voltage
± 22
V
(1)
Drain current (continuous) at TC = 25 °C
10
A
ID
Drain current (continuous) at TC = 100 °C
7
A
Drain current (pulsed)
40
A
Total dissipation at TC = 25 °C
2.5
W
Derating factor
0.02
W/°C
EAS (3)
Single pulse avalanche energy
50
mJ
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
ID
IDM
(2)
PTOT
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case max
50
°C/W
RthJA
Thermal resistance junction-case max
100
°C/W
TJ
Maximum lead temperature for soldering
purpose
275
°C
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Electrical characteristics
2
STS10DN3LH5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
Test conditions
Drain-source
breakdown Voltage
ID = 250 µA, VGS= 0
Min.
Typ.
Max.
30
Unit
V
VDS = 30 V
Zero gate voltage
drain current (VGS = 0) VDS = 30 V, Tc = 125 °C
1
10
µA
µA
IGSS
Gate body leakage
current
(VDS = 0)
±100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs2
RG
VGS = ± 22 V
1
V
VGS = 10 V, ID= 5 A
0.019
0.021
Ω
VGS = 4.5 V, ID= 5 A
0.023
0.028
Ω
Dynamic
Symbol
Qgs1
Downloaded from Arrow.com.
Parameter
IDSS
Table 5.
4/13
Static
Test conditions
Min
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
475
97
19
-
pF
pF
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15 V, ID = 10 A
VGS = 5 V
(Figure 14)
-
4.6
1.7
1.9
-
nC
nC
nC
Pre Vth gate-to-source
VDD = 15 V, ID = 10A
charge
VGS = 5 V
Post Vth gate-to(Figure 19)
source charge
-
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
-
Gate input resistance
Doc ID 15624 Rev 1
nC
0.67
-
nC
0.84
2.5
-
Ω
STS10DN3LH5
Electrical characteristics
Table 6.
Symbol
td(on)
tr
td(off)
tf
Switching on/off (resistive load)
Parameter
Test conditions
RG = 4.7 Ω, VGS = 10 V
Unit
-
4
22
-
ns
ns
-
13
2.8
-
ns
ns
Min.
Typ.
Max.
Unit
-
10
40
A
A
1.1
V
VDD = 15 V, ID = 5 A,
Turn-off delay time
Fall time
RG = 4.7 Ω, VGS = 10 V
(Figure 13 and Figure 18)
Symbol
Parameter
ISDM
Max.
(Figure 13 and Figure 18)
Source drain diode
(1)
Typ.
VDD = 15 V, ID = 5 A,
Turn-on delay time
Rise time
Table 7.
ISD
Min.
Test conditions
Source-drain current
Source-drain current
(pulsed)
VSD
Forward on voltage
ISD = 5 A, VGS = 0
-
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, VDD = 25 V
di/dt = 100 A/µs,
(Figure 15)
-
Qrr
IRRM
16.2
7.8
1
ns
nC
A
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
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Electrical characteristics
STS10DN3LH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM03899v1
ID
(A)
Tj=150°C
Tc=25°C
s
ai
are n)
his DS(o
t
R
n
n i ax
tio
m
era d by
p
O
ite
Lim
100
10
Sinlge
pulse
100ms
1
10ms
1s
0.1
0.01
0.1
Figure 4.
10
1
VDS(V)
Output characteristics
AM03900v1
ID
(A)
70
VGS=10V
AM03901v1
ID
(A)
VDS=5V
70
6V
60
60
5V
50
50
40
40
4V
30
30
20
20
3V
10
0
0
Figure 6.
10
1
2
3
4
Normalized BVDSS vs temperature
AM03902v1
BVDSS
(norm)
0
0
VDS(V)
Figure 7.
2
4
8
6
VGS(V)
Static drain-source on resistance
AM03903v1
RDS(on)
(Ω)
ID=13.5A
VGS=10V
35
1.10
30
1.05
25
1.00
20
15
0.95
10
0.90
0.85
-55 -30 -5
6/13
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5
20 45
70 95 120
TJ(°C)
Doc ID 15624 Rev 1
0
0
5
10
15
20
25
ID(A)
STS10DN3LH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM03904v1
VGS
(V)
VDD=15V
12
Capacitance variations
C
(pF)
AM03905v1
810
ID=27A
TJ=25°C
f=1MHz
710
10
610
8
510
6
410
Ciss
310
4
210
2
Crss
110
0
4
2
0
Qg(nC)
6
Figure 10. Normalized gate threshold voltage
vs temperature
AM03906v1
VGS(th)
(norm)
1.1
10
0
Coss
10
20
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM03907v1
RDS(on)
(norm)
1.8
1.6
1.0
1.4
0.9
1.2
0.8
1.0
0.7
0.6
0.8
0.5
0.6
0.4
-55 -30 -5
20 45 70 95 120 145 TJ(°C)
0.4
-55 -30 -5
20 45 70 95
120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM03908v1
VSD
(V)
TJ=-55°C
1.1
1.0
0.9
0.8
TJ=175°C
TJ=25°C
0.7
0.6
0.5
0.4
0
5
10
15
20
25
ISD(A)
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Test circuits
3
STS10DN3LH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
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Doc ID 15624 Rev 1
10%
AM01473v1
STS10DN3LH5
Test circuits
Figure 19. Gate charge waveform
Doc ID 15624 Rev 1
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Package mechanical data
4
STS10DN3LH5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/13
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Doc ID 15624 Rev 1
STS10DN3LH5
Package mechanical data
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
TYP.
1.75
0.1
MAX.
0.068
0.25
a2
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
e
1.27
e3
3.81
0.050
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
0.6
S
0.157
0.050
0.023
8 (max.)
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11/13
Revision history
5
STS10DN3LH5
Revision history
Table 8.
12/13
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Document revision history
Date
Revision
12-May-2009
1
Changes
First release
Doc ID 15624 Rev 1
STS10DN3LH5
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