STMicroelectronics SCTW60N120G2AG

The STMicroelectronics SCTW60N120G2AG is an automotive-grade silicon carbide Power MOSFET designed for high-efficiency and high-power-density applications. It features a low on-resistance of 45mΩ, a high-speed switching performance, and a very fast and robust intrinsic body diode. With a breakdown voltage of 1200V and a continuous drain current of 52A at 25°C, it is suitable for applications such as DC-DC converters, solar inverters, renewable energy systems, SMPS, and onboard chargers. Its high operating junction temperature capability (TJ = 200°C) makes it ideal for harsh environments.