SCTW60N120G2AG
Datasheet
Automotive-grade silicon carbide Power MOSFET
1200 V, 52 A, 45 mΩ (typ., T
J
= 25 °C) in an HiP247 package
Features
Order code
SCTW60N120G2AG
V
DS
1200 V
R
DS(on)
typ.
45 mΩ
I
D
52 A
G(1)
HiP247
D(2, TAB)
S(3)
1
2
3
• AEC-Q101 qualified
• High speed switching performance
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (T
J
= 200 °C)
Applications
• DC-DC converters
• Solar Inverters and renewable energy
• SMPS
• OBC
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCTW60N120G2AG
Product summary
Order code SCTW60N120G2AG
Marking
Package
Packing
SCT60N120G2AG
HiP247
Tube
DS13347 - Rev 1 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTW60N120G2AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
Drain-source voltage
Parameter
V
I
GS
D
Gate-source voltage
Gate-source voltage (recommended operational values)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(1)
P
TOT
T stg
T
J
Total power dissipation at T
Storage temperature range
C
= 25 °C
Operating junction temperature range
1. Pulse width is limited by safe operating area.
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Thermal resistance junction-case
Parameter
Thermal resistance junction-ambient
Value
1200
-10 to 22
-5 to 18
52
39
156
388
-55 to 200
A
A
W
°C
°C
Unit
V
V
Value
0.45
50
Unit
°C/W
°C/W
DS13347 - Rev 1 page 2/11
2
SCTW60N120G2AG
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 1200 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 1200 V, T
J
= 200 °C
Gate-body leakage current V
DS
= 0 V, V
GS
= 22 V, T
J
= 200 °C
Gate threshold voltage
Static drain-source on-resistance
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 18 V, I
D
= 30 A
V
GS
= 18 V, I
D
= 30 A, T
J
= 200 °C
Min.
Typ.
Max.
Unit
1200 V
1 10
µA
25
1.9
20
3.1
45
113
5
58 nA
V mΩ
Symbol
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
Table 4. Dynamic
DS
Test conditions
= 800 V, f = 1 MHz, V f = 1 MHz, I
D
= 0 A
GS
= 0 V
V
DS
= 800 V, V
GS
= -5 to 18 V, I
D
= 30 A
-
-
-
Min.
Typ.
Max.
Unit
2086 pF
90 pF
-
-
18
1
101
36
23
-
-
-
-
nC nC pF
Ω nC
Symbol
E on
E off
Parameter
Turn-on switching energy
Turn-off switching energy
Table 5. Switching energy (inductive load)
Test conditions
V
DD
= 800 V, I
D
= 30 A
R
G
= 2.2 Ω, V
GS
= -5 V to 18 V
Min.
Typ.
Max.
Unit
-
431
68
-
-
µJ
µJ
Symbol
V
SD t rr
Q rr
I
RRM
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 6. Reverse SiC diode characteristics
Test conditions
I
SD
= 30 A, V
GS
= 0 V
I
SD
= 30 A, V
GS
= 0 V, di/dt = 2000 A/μs, V
DD
= 800 V
Min.
Typ.
Max.
Unit
-
3.5
53
-
-
V ns
-
192
11 -
nC
A
DS13347 - Rev 1 page 3/11
SCTW60N120G2AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG110520200954SOA
I
DM
10 2
in this area
by
R
DS(on)
10 1
R
DS(on)
max.
10 0
T
J
= 200 °C
T
C
= 25 °C
Single pulse
10 -1
10 -1 10 0 10 1 10 2 10 3 t p
=1µs t p
=10µs t p
=100µs t p
=1ms t p
=10ms
V
(BR)DSS
V
DS
(V)
Figure 3. Output characteristics (T
J
= 25 °C)
I
D
(A)
GADG110520200955OCH25
60
VGS = 16, 18, 20 V
14 V
12 V
40
20
0
0 2 4 6
10 V
8
8 V
6 V
V
DS
(V)
I
D
(A)
25
Figure 5. Transfer characteristics
GADG110520201454TCH
T
J
= 200 °C
20
15
10
V
DD
= 5 V
T
J
= 25 °C
5
0
0 2 4 6 8 10 V
GS
(V)
Z thJ-C
(°C/W)
Figure 2. Thermal impedance
GADG110520200954ZTH
0.4 0.3
duty=0.5
10 -1
0.2
0.1
0.05
10 -2
R thJ-C
= 0.45 °C/W duty = t on
/ T
Single pulse t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Output characteristics (T
J
= 200 °C)
I
D
(A)
GADG110520200956OCH200
V
GS
= 14, 16, 18, 20 V
60 12V
10V
40
8V
20
0
0 2 4 6 8
6V
V
DS
(V)
P
TOT
(W)
Figure 6. Total power dissipation
GADG110520201607PDT
400
300
200
100
0
0
T
J
≤ 200 °C
50 100 150 200 T
C
(°C)
DS13347 - Rev 1 page 4/11
SCTW60N120G2AG
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
V
GS
(V)
GADG110520201649QVG
15
V
DD
= 800 V,
I
D
= 30 A
10
5
1000
500
0
0
0
-5
-10
0 25
20
50
40
75 100
60
Q g
(nC)
Figure 9. Switching energy vs drain current
E
(µJ)
2500
GADG110520201803SLC
2000
V
DD
= 800 V,
R
G
= 2.2 Ω,
V
GS
= -5 to 18 V
E tot
E on
1500
E off
I
D
(A)
C
(pF)
Figure 8. Capacitance variations
GADG110520200958CVR
10 3
C
ISS
10 2 f = 1 MHz
C
OSS
10 1
10 -1 10 0 10 1 10 2
C
RSS
V
DS
(V)
Figure 10. Switching energy vs temperature
E
(µJ) V
DD
= 800 V, I
D
= 30 A,
GADG110520201813SLT
800
R
G
= 2.2 Ω, V
GS
= -5 to 18 V
E tot
600
E on
400
200
0
0 50
E off
100 150 200 T
J
(°C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
GADG110520201723BDV
1.06
1.04
I
D
= 1 mA
1.02
1.00
0.98
0.96
-75 -25 25 75 125 175 T
J
(°C)
Figure 12. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG110520201009VTH
1.4
1.2
I
D
= 1mA
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
DS13347 - Rev 1 page 5/11
SCTW60N120G2AG
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG110520201010RON
2.4
2.0
1.6
1.2
0.8
0.4
-50 0
V
GS
= 18 V
50 100 150 200 T
J
(°C)
Figure 14. Reverse conduction characteristics (T
J
= 25 °C)
I
D
(A)
-10
GADG110520202016RRC25
-20
V
GS
= -5 V
-30
-40
-50
-60
V
GS
= +18 V
-70
V
GS
= 0 V
-80
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
Figure 15. Reverse conduction characteristics (T
J
= 200 °C)
-40
-50
-60
I
D
(A)
-10
-20
-30
V
GS
= -5 V
GADG110520202017RRC200
V
GS
= +18 V
V
GS
= 0 V
-70
-80
-6 -5 -4 -3 -2 -1 V
DS
(V)
DS13347 - Rev 1 page 6/11
3
3.1
SCTW60N120G2AG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
HiP247 package information
Figure 16. HiP247 package outline
DS13347 - Rev 1
8581091_3_fig2 page 7/11
DS13347 - Rev 1
Dim.
c
D
E
E3 e
L
L1
L2
P
Q
S
A
A1
A2 b b1 b2
Table 7. HiP247 package mechanical data
15.45
1.45
5.30
14.20
3.70
18.30
3.55
5.65
5.30
Min.
4.85
2.20
1.90
1.00
2.00
3.00
0.40
19.85
mm
Typ.
5.00
2.00
20.00
15.60
5.45
18.50
5.50
SCTW60N120G2AG
HiP247 package information
15.75
1.65
5.60
14.80
4.30
18.70
3.65
5.95
5.70
Max.
5.15
2.60
2.10
1.40
2.40
3.40
0.80
20.15
page 8/11
Revision history
Date
18-May-2020
Revision
1
Table 8. Document revision history
Changes
First release.
SCTW60N120G2AG
DS13347 - Rev 1 page 9/11
SCTW60N120G2AG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.1
HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
DS13347 - Rev 1 page 10/11
SCTW60N120G2AG
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DS13347 - Rev 1 page 11/11
