STMicroelectronics STH36N60DM6-7AG
Manuals and User Guides for STMicroelectronics STH36N60DM6-7AG. We found 1 manuals for free downloads Data Sheet
Below you will find brief information for MDmesh DM6 STH36N60DM6-7AG. This automotive-grade N-channel Power MOSFET features a fast-recovery body diode, lower RDS(on) x area, and 100% avalanche testing. It boasts excellent switching performance, extremely rugged dv/dt, and Zener protection, making it ideal for switching applications in demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Key Features
AEC-Q101 qualified for automotive applications
Fast-recovery body diode for improved efficiency
Lower RDS(on) x area compared to previous generations
Low gate charge, input capacitance, and resistance for faster switching
100% avalanche tested for reliability
Extremely dv/dt ruggedness for robust performance
Zener-protected for enhanced ESD performance
Tab-leads creepage distance 4.5 mm typ.
Pages: 14 STMicroelectronics STH36N60DM6-7AG Data Sheet
Brand: STMicroelectronics Size: 465 KB
Languages: English
Open manualFrequently Answers and Questions
What is the drain-source breakdown voltage of the STH36N60DM6-7AG?
The drain-source breakdown voltage is 600 V.
What is the maximum static drain-source on-resistance of the STH36N60DM6-7AG?
The maximum static drain-source on-resistance is 0.099 Ω.
What is the total gate charge of the STH36N60DM6-7AG?
The typical total gate charge is 46 nC.
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