STH36N60DM6-7AG
Datasheet
Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6
Power MOSFET in an H²PAK-7 package
TAB
Order code
STH36N60DM6-7AG
V
DS
600 V
R
DS(on)
max.
0.099 Ω
I
D
29 A
7
1
H 2 PAK-7
Drain(TAB)
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower R
DS(on)
x area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely dv/dt ruggedness
• Zener-protected
• Tab-leads creepage distance 4.5 mm typ.
• Excellent switching performance thanks to the extra driving source pin
Gate(1)
Applications
• Switching applications
Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTABZ
Product status link
STH36N60DM6-7AG
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product summary
Order code STH36N60DM6-7AG
Marking
Package
Packing
36N60DM6
H²PAK-7
Tape and reel
DS11713 - Rev 3 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STH36N60DM6-7AG
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
GS
I
D
I
D
I
D
(1)
P
TOT
dv/dt (2)
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
C
C
= 25 °C
= 100 °C
dv/dt (3)
T
J
T stg
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 29 A, di/dt ≤ 800 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
= 480 V
3. V
DS
≤ 480 V
Table 2. Thermal data
Symbol
R thj-case
R thj-pcb
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb (1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol Parameter
I
AR
E
AS
Avalanche current, repetitive or not repetitive (pulse width limited by T
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR jmax
, V
DD
= 100 V)
)
Value
±25
29
18
103
210
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.6
30
Unit
°C/W
Value Unit
6 A
630 mJ
DS11713 - Rev 3 page 2/14
2
STH36N60DM6-7AG
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Table 4. On/off-state
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V; T
C
= 125 °C
(1)
V
V
V
DS
DS
GS
= 0 V, V
GS
= V
GS
1. Defined by design, not subject to production test.
, I
D
= 10 V, I
= ±25 V
= 250 µA
D
= 14.5 A
Min.
600
3
Typ.
4
0.084
Max.
5
100
±5
5
0.099
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Test conditions
Output capacitance V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz open drain
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
(see Figure 13. Test circuit for gate charge behavior
= 29 A, V
)
GS
= 0 to 10 V,
Min.
-
-
-
-
-
-
-
-
Typ.
1960
140
2
335
1.5
46
13
22
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol Parameter t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 14.5 A, R
G
= 4.7 Ω, V
GS
= 10 V (See Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform )
Min.
-
-
-
-
Typ.
16
5.3
50
7
Max.
-
-
-
-
Unit ns ns ns ns
DS11713 - Rev 3 page 3/14
DS11713 - Rev 3
STH36N60DM6-7AG
Electrical characteristics
Table 7. Source-drain diode
Symbol Parameter
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
I
Test conditions
T
SD
SD
SD j
= 29 A, V
GS
= 29 A, di/dt = 100 A/µs, V
DD
= 60 V,
= 150 °C (see Figure 14. Test circuit for inductive load switching and diode recovery times
)
= 0 V
= 29 A, di/dt = 100 A/µs, V
DD
(see
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
= 60 V,
Figure 14. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
Min.
-
-
-
110
0.5
9
215
2
17
Typ.
Max.
29
103
1.6
ns
µC
A ns
µC
A
Unit
A
A
V
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 8. Gate-source Zener diode
Test conditions
I
GS
= ±1 mA, I
D
= 0 A
Min.
±30
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/14
STH36N60DM6-7AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
I
D
(A)
GIPG200220171022SOA
Operation in this area is limited by R
DS(on)
10 2
10 1
10 0
10 -1
10 -2
10 -1 10 0
T
T j
≤150 °C c
= 25°C single pulse
10 1 10 2 t p
=10 µs t p
=100 µs t p
=1 ms t p
=10 ms
V
DS
(V)
I
D
(A)
100
Figure 3. Output characteristics
GIPG200220170940OCH
V
GS
= 9, 10 V
V
GS
=8 V
80
60
V
GS
=7 V
40
20
0
0 4 8 12
V
GS
=6 V
16 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
10
V
DS
GIPG200220171022QVG V
DS
(V)
600
V
DD
I
D
=480 V
=29 A
500
4
2
0
0
8
6
10 20 30 40 50
400
300
200
100
Q
0 g
(nC)
Figure 2. Thermal impedance
40
20
0
4
Figure 4. Transfer characteristics
I
D
(A)
100
V
DS
=20 V
GIPG200220171020TCH
80
60
5 6 7 8 9 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(Ω)
0.09
V
GS
=10 V
GIPG200220170939RID
0.088
0.086
0.084
0.082
0.08
0.078
0 4 8 12 16 20 24 28 I
D
(A)
DS11713 - Rev 3 page 5/14
STH36N60DM6-7AG
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GIPG200220170940CVR
10 4
C
ISS
10 3
10 2
10 1
10 0
10 -1 f = 1 MHz
10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GIPG200220170937VTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.5
GIPG200220170938RON
V
GS
= 10 V
I
D
= 14.5 A
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.12
GADG170220171016BDV
I
D
= 1 mA
1.08
1.04
1
0.96
0.92
0.88
-75 -25 25 75 125 T
J
(°C)
Figure 11. Source-drain diode forward characteristics
V
SD
(V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0 4
GIPG200220170940SDF
T j
= -50 °C
T j
= 25 °C
T j
= 150 °C
8 12 16 20 24 28 I
SD
(A)
DS11713 - Rev 3 page 6/14
STH36N60DM6-7AG
Test circuits
3
Test circuits
Figure 12. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 13. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 15. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 16. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 17. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS11713 - Rev 3 page 7/14
4
4.1
STH36N60DM6-7AG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
H²PAK-7 package information
Figure 18. H²PAK-7 package outline
DS11713 - Rev 3
DM00249216_4 page 8/14
Dim.
E
F
H
H1
L
L1
L2
L3
M
R
V
A
A1
C e e1 e2
STH36N60DM6-7AG
H²PAK-7 package information
Table 9. H²PAK-7 package mechanical data mm
10.00
7.40
14.75
1.27
4.35
6.85
1.90
0.20
0°
2.34
4.88
7.42
0.45
0.50
Min.
4.30
0.03
1.17
Figure 19. H²PAK-7 recommended footprint
10.40
7.60
15.25
1.40
4.95
7.25
2.50
0.60
8°
2.74
5.28
7.82
0.60
0.70
Max.
4.80
0.20
1.37
Note: Dimensions are in mm.
DS11713 - Rev 3 footprint_DM00249216_4 page 9/14
STH36N60DM6-7AG
Packing information
4.2
H²PAK-7 packing information
Figure 20. Tape outline
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
T
Top cover tape
K0
B0
A0 P1
User direction of feed
D1
F
E
W
User direction of feed
R
Bending radius
AM08852v2
DS11713 - Rev 3 page 10/14
DS11713 - Rev 3
A
REEL DIMENSIONS
D
Figure 21. Reel outline
40 mm min.
Access hole
At slot location
B
C
Full radius
Tape slot
In core for
Tape start
STH36N60DM6-7AG
Packing information
T
N
G measured
At hub
Dim.
K0
P0
P1
E
F
A0
B0
D
D1
P2
R
T
W
4.8
3.9
11.9
1.9
50
0.25
23.7
Min.
10.5
15.7
1.5
1.59
1.65
11.4
Tape
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
Table 10. Tape and reel mechanical data
Reel mm
Dim.
G
N
T
A
B
C
D
Min.
Base quantity
Bulk quantity
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
Max.
330
13.2
26.4
30.4
1000
1000 page 11/14
STH36N60DM6-7AG
Revision history
Table 11. Document revision history
Date
16-Jun-2016
Revision Changes
1 Initial release.
03-Nov-2017
26-Sep-2018
2
3
Modified Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" , Table 5: "On/off-state" ,
Table 6: "Dynamic" , Table 7: "Switching times" and Table 8: "Source-drain diode" .
Added Table 9: "Gate-source Zener diode " .
Added Section 2.1: "Electrical characteristics (curves)" .
Minor text changes.
Removed maturity status indication from cover page. The document status is production data.
Updated title and features in cover page.
Minor text changes.
DS11713 - Rev 3 page 12/14
STH36N60DM6-7AG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
H²PAK-7 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS11713 - Rev 3 page 13/14
STH36N60DM6-7AG
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DS11713 - Rev 3 page 14/14
