STMicroelectronics BU508AW Datasheet
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BU508AW
High voltage NPN power transistor for standard definition CRT display
Features
■
■
■
■
■
■
State-of-the-art technology:
– Diffused collector “Enhanced generation”
Stable performances versus operating temperature variation
Low base-drive requirement
Tight h
FE
range at operating collector current
High ruggedness
TO-247 semi-insulated power package
Applications
■
■
Horizontal deflection output for CRT TV
Switch mode power supplies for CRT TV
Description
The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
TO-247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Order code
Device summary
Marking
BU508AW BU508AW
Package
TO-247
Packaging
Tube
August 2007 Rev 2 1/11 www.st.com
11
Content
Content
BU508AW
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2/11
BU508AW
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Collector-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T c
= 25°C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
R thj-case
Thermal resistance junction-case _______________ max
Electrical ratings
Value
1500
700
9
8
15
4
125
-65 to 150
150
Value
1
Unit
°C/W
Unit
A
A
W
V
A
V
V
°C
3/11
Electrical characteristics
2 Electrical characteristics
BU508AW
(T case
= 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol Parameter Test conditions
I
I
CES
EBO
Collector cut-off current
(V
BE
=0)
Emitter cut-off current
(I
C
=0)
V
CEO(sus)
(1)
Collector-emitter sustaining voltage
(I
C
=0)
V
CE(sat)
(1)
Collector-emitter saturation voltage
V
BE(sat)
(1)
Base-emitter saturation voltage
I
I
I
V
V
V
CE
CE
EB
C
C
C
= 1500V
= 1500V; T
= 9V
= 100mA
C
= 4.5A I
= 125°C
B
= 4.5A I
= 1.6A
B
= 2A h
FE
(1) t t s f
DC current gain
Inductive load
Storage time
Fall time
I
C
= 0.1A V
CE
= 5V
I
C
= 4.5A V
CE
= 5V
I
C
= 4.5A I
B(on)
= 0.5A
V
BE(off)
= -2.7V f h
= 16KHz
L
BB(off)
= 4.5
µH
1.
Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
Min.
Typ.
Max.
Unit
700
10
5
2.5
0.2
0.2
2
1
1
1.1
30 mA mA mA
V
V
V
µs
µs
4/11
BU508AW Electrical characteristics
characteristics
Figure 2.
Safe operating area Figure 3.
Derating curve
Figure 4.
DC current gain Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
5/11
Electrical characteristics
Figure 8.
Output characteristics
BU508AW
6/11
BU508AW
Figure 9.
Power losses and inductive load switching
Electrical characteristics
Figure 10.
Reverse biased safe operating area
7/11
Package mechanical data
3 Package mechanical data
BU508AW
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
BU508AW Package mechanical data
DIM.
b2 c
D
E
A
A1 b b1 e
L
L1
L2
øP
øR
S
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA
mm.
TYP
5.45
18.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
5.50
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
9/11
Revision history BU508AW
Table 5.
Date
Document revision history
02-Mar-2007
14-Aug-2007
Revision
1
2
Changes
Initial release.
Complete document, added all curves (
2.1: Electrical characteristics
10/11
BU508AW
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