BUL416
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Figure 1: Package
TO-220
1
2
3
Figure 2: Internal Schematic Diagram n n
STMicroelectronics PREFERRED SALES
TYPE
NPN TRANSISTOR n
HIGH VOLTAGE CAPABILITY n
VERY HIGH SWITCHING SPEED n
FULLY CHARACTERISEZ AT 125 o C n
LOW SPREAD OF DYNAMIC PARAMETERS
APPLICATIONS n n
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
Table 1: Order Codes
Part Number Marking Package Packaging
BUL416
BUL416A or (#)
BUL416B
TO-220 Tube
# See:note on page 2
Table 2: Absolute Maximum Ratings
Obsolete Product(s) - Obsolete Product(s)
Unit
V
CES
V
CEO
V
EBO
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
C
= 0)
BE
= 0)
B
= 0)
1600
800
9
V
V
V
Collector Current I
C
I
CM
I
B
Collector Peak Current (t p
< 5ms)
Base Current
6
9
5
A
A
A
I
BM
P tot
Base Peak Current (t p
< 5ms)
Total Dissipation at T
C
= 25 o
C
Storage Temperature
8
110
-65 to 150
A
W
°C T stg
Rev. 3
January 2005 1/8
BUL416
Symbol
T
J
Parameter
Max. Operating Junction Temperature
Value
150
Unit
°C
Table 3: Thermal Data
R thj-case
Thermal Resistance Junction-Case Max
R thj-amb
Thermal Resistance Junction-Ambient Max
1.14
62.5
o
C/W o
C/W
Table 4: Electrical Characteristics (T case
= 25 o
C unless otherwise specified)
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
=0 V)
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
V
CE
= 1600 V
V
CE
= 1600 V T j
= 125 o
C
V
CE
= 800 V
100
500
µA
µA
I
CEO
Collector Cut-off Current
(I
B
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
V
EBO
(I
B
= 0 )
Emitter-Base Voltage
(I
C
= 0 )
V
CE(sat)
* Collector-Emitter
Saturation Voltage
V
BE(sat)
* Base-Emitter Saturation
Voltage h
FE
* t s t f t s t f
DC Current Gain
I
C
= 100 mA L = 25 mH
I
E
= 10 mA
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 1.33 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 1.33 A
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.7 A V
CE
= 5 V
Group A
Group B
I
C
= 3 A I
B1
= 1 A
V
BE(off)
= -5 V R
BB
= 0 W
V clamp
= 200 V L = 200 µH
(see figure 12)
I
C
= 3 A I
B1
= 1 A
V
BE(off)
= -5 V R
BB
= 0 W
V clamp
= 200 V L = 200 µH
800
9
10
12
25
2.3
650
3
680
250
1.5
3
1.2
1.5
27
40
µA
V
V
V
V
V
V
µs ns
µs ns
T j
= 100
* Pulsed: Pulsed duration = 300 m s, duty cycle
≤ 1.5
%.
o C (see figure 12) Obsolete Product(s) - Obsolete Product(s)
# Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
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Figure 3: Safe Operating Area Figure 6: Derating Curve
BUL416
Figure 4: DC Current Gain Figure 7: DC Current Gain
Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage
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BUL416
Figure 9: Inductive Load Fall Time Figure 11: Resistive Load Stoarage Time
Figure 10: Reverse Biased SOA
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Figure 12: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
BUL416
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BUL416
DIM.
D
E e
A b b1 c e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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Table 5:
Version
14-Jan-2004
09-Sep-2004
26-Jan-2005
Release Date
1
2
3
First Release.
Second Release.
Third Release.
Change Designator
BUL416
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BUL416
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Obsolete Product(s) - Obsolete Product(s)
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