Features
■
■
■
■
■
■
Low voltage noise: 4.5 nV/
√Hz
High gain bandwidth product: 15 MHz
High slew rate: 7 V/µs
Low distortion: 0.002%
Excellent frequency stability
ESD protection 2 kV
Applications
■
■
Audio systems
Preamplification, filtering
Description
The LM833 is a monolithic dual operational amplifier particularly well-suited to audio applications.
It offers low voltage noise (4.5 nV/
√Hz) and high frequency performances (15 MHz gain bandwidth product, 7 V/µs slew rate).
In addition, the LM833 has a very low distortion
(0.002%) and excellent phase/gain margins.
LM833
Low noise dual operational amplifier
N
DIP8
(Plastic package)
D
SO-8
(Plastic micropackage)
Pin connections (top view)
Output 1 1
Inverting input 1 2
Non-inverting input 1 3
V
CC
4
-
+
-
+
8
VCC
+
7
Output 2
6
Inverting input 2
5 Non-inverting input 2
August 2009 Doc ID 2169 Rev 3 1/12
www.st.com
12
Absolute maximum ratings
1 Absolute maximum ratings
LM833
Table 1.
Symbol
Key parameters and their absolute maximum ratings
Parameter Value Unit
V
CC
V
V id i
Supply voltage
Differential input voltage
(1)
Input voltage
(1)
Input current
(2)
: V in
driven negative
±18 or +36
±30
±15
V
V
V
5 mA in DC or 50 mA in
AC (duty cycle = 10%,
T=1s)
I in mA
Input current
(3)
: V in
driven positive above
AMR value
Output short-circuit duration
0.4
Infinite s
T j
T stg
Ptot
Junction temperature
Storage temperature
+150
-65 to +150
°C
°C
Maximum power dissipation
(4)
HBM: human body model
(5)
500
2 mW kV
ESD
MM: machine model
(6)
200 V
CDM: charged device model
(7)
1.5
kV
1.
Either or both input voltages must not exceed the magnitude of Vcc
+
or Vcc
-
.
2.
This input current only exists when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistor becoming forward-biased and thereby acting as input diode clamp. In addition to this diode action, there is NPN parasitic action on the IC chip. This transistor action can cause the output voltages of the Op-amps to go to the V
CC
voltage level (or to ground for a large overdrive) for the time during which an input is driven negative.
This is not destructive and normal output is restored for input voltages above -0.3 V.
3.
The junction base/substrate of the input PNP transistor polarized in reverse must be protected by a resistor in series with the inputs to limit the input current to 400 µA max (R = (Vin - 36 V)/400 µA).
4.
Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
5.
Human body model: 100 pF discharged through a 1.5 k
Ω resistor between two pins of the device, done for all couples of pin combinations with other pins floating.
6.
Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5
Ω), done for all couples of pin combinations with other pins floating.
7.
Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to the ground.
Table 2.
Symbol
Operating conditions
Parameter
V
CC
T oper
Supply voltage
Operating free-air temperature range
Value
±2.5 to ±15
-40 to 105
Unit
V
°C
2/12 Doc ID 2169 Rev 3
LM833
2 Typical application schematics
Typical application schematics
Figure 1.
Schematic diagram (1/2 LM833)
V
CC
Output
Inverting
Input
Non-inverting
Input
V
CC
Doc ID 2169 Rev 3 3/12
Electrical characteristics LM833
Table 3.
Symbol
V
DV io
I io
I ib io
Input offset voltage (R s
= 10
Ω, V o
= 0 V, V ic
= 0 V)
Input offset voltage drift
R s
= 10
Ω, V o
= 0 V, T min.
≤ T amb
≤ T max.
Input offset current (V
Input bias current (V o o
= 0 V, V
= 0 V, V ic ic
= 0 V)
= 0 V)
V
A icm vd
Input common mode voltage range
Large signal voltage gain (R
L
= 2 k
Ω, V o
= ±10 V)
±V opp
Output voltage swing (V id
= ±1 V)
R
L
R
L
= 2.0 k
Ω
= 2.0 k
Ω
R
L
R
L
= 10 k
Ω
= 10 k
Ω
CMR
Common-mode rejection ratio (V ic
= ±13 V)
SVR
I
CC
SR
GBP
B
φm
V
CC+
= +15 V, V
CC-
= -15 V, T amb
= 25° C (unless otherwise specified)
Parameter
Supply voltage rejection ratio
(V
CC+
/V
CC-
= +15 V/-15 V to +5 V/-5 V)
Supply current (V o
= 0 V, all amplifiers)
Slew rate (V i
= -10 V to +10 V, R
L
= 2 k
Ω, A
V
= +1)
Gain bandwidth product
(R
L
= 2 k
Ω, C
L
= 100 pF, f = 100 kHz)
Unity gain bandwidth (open loop)
Phase margin (R
L
= 2 k
Ω)
Min.
Typ.
Max.
90
10
12
80
80
5
10
0.3
2
25
13.7
-14
13.9
-14.4
5
200
300 1000
±12 ±14
100
100
105
4
7
15
9
60
-10
-12
8
Unit
mV
µV/°C nA nA
V dB
V dB dB mA
V/µs
MHz
MHz
Degrees e n
Equivalent input noise voltage (R
S
= 100
Ω, f = 1 kHz)
4.5
Hz i n
Equivalent input noise current (f = 1 kHz)
THD
Total harmonic distortion
(R
L
= 2 k
Ω, f = 20 Hz to 20 kHz, V o
= 3 V rms
, A
V
= +1)
V
O1
/V
O2
Channel separation (f = 20 Hz to 20 kHz)
FPB
Full power bandwidth (V o
= 27 V pp
, R
L
= 2 k
Ω, THD ≤ 1%)
0.5
0.002
120
120
Hz
% dB kHz
4/12 Doc ID 2169 Rev 3
LM833 Electrical characteristics
Figure 2.
Total supply current vs. supply voltage
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 5 25 30 10 15 20
Supply Voltage (V)
Figure 3.
-5
-10
-15
0
15
10
5
0
Output voltage vs. supply voltage
V id
R
L
= ±1V
= 600
Ω
5 10
Supply Voltage (V)
15
Figure 4.
Equivalent input noise voltage vs. frequency
Figure 5.
Output short circuit current vs. output voltage
V
CC
= ±15V, G = 100
R s
= 100, T amb
= 25°C
50
40
30
20
10
0
-10
-20
-30
-40
0
V
CC
= 0/30V
T amb
= 25°C
10 20
Output Voltage (V)
Figure 6.
Output voltage vs. supply voltage Figure 7.
THD+ noise vs. frequency
30
-5
-10
-15
0
15
10
5
0
V id
R
L
= ±1V
= 2k
Ω
5 10
Supply Voltage (V)
15
1
0.1
0.01
0.001
0.01
R
L
V
= 2k
Ω, V o
CC
= 3V
= ±15V, A rms v
= 1
0.1
1
Frequency (kHz)
10 100
Doc ID 2169 Rev 3 5/12
Electrical characteristics
Figure 8.
Voltage gain and phase vs. frequency
50
40
30
20
10
0 gain
-10
-20
-30
10
R
L
V
= 2k
Ω, C
L
CC
= 100pF
= ±15V, G = -100
100 1000
Frequency (kHz) phase
10000
180
120
60
0
-60
-120
100000
Figure 9.
THD + noise vs. Vout
1.000
0.100
0.010
R
L
V
CC
= 2k
Ω, f = 1kHz
= ±15V, A v
= 10
0.001
1 2 3 4 5 6
Vout (Vrms)
7 8 9 10
LM833
6/12 Doc ID 2169 Rev 3
LM833 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at:
www.st.com
.
ECOPACK
®
is an ST trademark.
Doc ID 2169 Rev 3 7/12
Package information
4.1 DIP8 package information
Figure 10.
DIP8 package mechanical drawing
LM833
8/12
E
E1 e eA eB
L b b2 c
D
A
A1
A2
Table 4.
Ref.
DIP8 package mechanical data
Dimensions
Millimeters
Min.
Typ.
Max.
5.33
Min.
0.20
9.02
7.62
6.10
0.38
2.92
0.36
1.14
3.30
0.46
1.52
0.25
9.27
7.87
6.35
2.54
7.62
4.95
0.56
1.78
0.36
10.16
8.26
7.11
0.015
0.115
0.014
0.045
0.008
0.355
0.300
0.240
2.92
3.30
10.92
3.81
0.115
0.130
0.018
0.060
0.010
0.365
0.310
0.250
0.100
0.300
0.130
Inches
Typ.
Max.
0.210
0.195
0.022
0.070
0.014
0.400
0.325
0.280
0.430
0.150
Doc ID 2169 Rev 3
LM833
Figure 11.
SO-8 package mechanical drawing
Package information
L1 k ccc
E1 e h
L
D
E b c
A
A1
A2
Table 5.
Ref.
SO-8 package mechanical data
Dimensions
Millimeters
Min.
Typ.
Max.
1.75
0.25
Min.
0.10
1.25
0.28
0.17
4.80
5.80
3.80
4.90
6.00
3.90
1.27
0.48
0.23
5.00
6.20
4.00
0.004
0.049
0.011
0.007
0.189
0.228
0.150
0.25
0.40
0.50
1.27
0.010
0.016
1.04
0 8°
0.10
1°
Inches
Typ.
0.193
0.236
0.154
0.050
0.040
Max.
0.069
0.010
0.019
0.010
0.197
0.244
0.157
0.020
0.050
8°
0.004
Doc ID 2169 Rev 3 9/12
Ordering information LM833
Table 6.
Order codes
Part number
Temperature range
LM833N
LM833D/DT
-40, +105° C
Package
DIP8
SO-8
Packing
Tube
Tube or tape & reel
Marking
LM833N
833
10/12 Doc ID 2169 Rev 3
LM833 Revision History
Table 7.
Date
Document revision history
Revision
01-Nov-2001
01-Jul-2005
20-Aug-2009
1
2
3
Changes
Initial release.
PPAP references inserted in the datasheet see
Table on page 1
.
ESD protection inserted in
Table 1 on page 2
.
Document reformatted.
Minor text changes.
Updated packages in
Chapter 4: Package information
.
Removed automotive grade versions (LM833YD/DT) from
Chapter 5: Ordering information
Doc ID 2169 Rev 3 11/12
LM833
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