®
Application Specific Discretes
ASD™
MAIN PRODUCT CHARACTERISTICS
V
BR
V
DRM
P
160Vdc
700Vdc
1.5W
■
■
FEATURES
Protection of the Mosfet in flyback power supply
TRANSIL™ and blocking diode in a single package
■
■
■
■
■
■
BENEFITS
Accurate voltage clamping regardless load
Reduced current loop
Reduced EMI emission
High integration
Fast assembly
Reduced losses in stand by mode
BASIC CONNECTION
T
D
Lf
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
T stg
T j
P
Parameter
Storage temperature
Junction temperature
Maximum power dissipation T°lead = 90°C
August 2001 - Ed: 2A
DO-15
Io
Vo
PKC-136
PEAK CLAMP
Value Unit
- 40 to + 150 °C
150
1.5
°C
W
1/5
PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
Symbol
V
V
I
RM
R
α
BR d
T sCL
Parameter
Leakage current
Breakdown voltage
V
R
= 136V
I
R
= 1mA pulse test < 50ms
Value
Test conditions
Min.
Typ.
Max.
T j
= 25°C
T j
=125°C
1
10
T j
= 25°C 150 160 170
T j
= 125°C 4
Dynamical Resistance tp < 500ns between I = 0.5Amps
and I = 1.5Amps
Temperature
Coefficient
Unit
µA
V
Ω
10.8
10
-4
/°C
Surge Clamping voltage
Ipp = 2.7Amps
10/1000µs
219 V
CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage V
BR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature.
∆
V
BR
= α
( j
−
25 ) V
BR
( 25
°
C ) (1)
V
BR
T
=
V
BR
( 25
°
C )
+ ∆
V
BR
V
CL
T
=
V
BR
T
+
.
(2)
(3)
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Symbol
V
V
I
R
RRM trr
FP
Parameter Tests conditions
Reverse leakage current V
R
= V
RRM
T j
= 25°C
T j
= 125°C
Repetitive Peak Reverse
Voltage
T j
= 25°C
Reverse Recovery Time I
F
= 1A dI
F
/ dt = -50A/µs
V
R
= 30V
Peak Forward Voltage I
F
= 3A dI
F
/ dt = 100A/µs
T
T j j
= 25°C
= 125°C
Value
Min.
Typ.
Max.
3
3 20
700
45
12
18
Unit
µ
A
V ns
V
CAPACITANCE
Symbol
C
Parameter
Total Parasitic capacitance 1MHz 30mV
2/5
Typical Value
35
Unit pF
PKC-136
THERMAL RESISTANCES
Symbol Parameter
R th(j-l) Junction to leads L = 10mm
R th(j-a) Junction to ambiant condition see note 1
Note 1: Device mounted on a epoxy FR4 board of 35µm thickness
Lead Length: 10mm
Pad diameter: 4mm
Track width: 1mm
Track length: 25mm
The Rth
(j-a) can be reduced by replacing the Cu track by plan:
S(Cu) = 1.5cm
2
/lead R th(j-a)
= 65°C/W
S(Cu) = 3.5cm
2
/lead R th(j-a)
= 60°C/W
Value
40
105
Unit
°C/W
°C/W
Fig. 1: Peak pulse power versus exponential pulse duration.
1.E+02
Pp(kW)
1.E+01
1.E+00
Tj initial=25°C
1.E-01
1.E-04 1.E-03 1.E-02 tp(ms)
1.E-01 1.E+00 1.E+01
Fig. 2: Relative variation of peak pulse power versus initial junction temperature.
50
40
30
20
10
0
0
110
100
90
80
70
60
%
25 50 75
Tj(°C)
100 125 150 175
Fig. 3: Average power dissipation versus ambient temperature.
1.8
P(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25
Tamb =Tleads
Printed circuit board
50
Tamb(°C)
75 100 125 150
Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4)
1000.0
Zth(j-a) (°C/W)
Free air
100.0
10.0
1.0
1.E-02 1.E-01 1.E+00 tp(s)
1.E+01 1.E+02 1.E+03
3/5
PKC-136
Fig. 5: Thermal resistance junction to ambient versus copper surface under each lead.
Rth(j-a)
110
100
90
80
70
60
50
40
30
20
10
0
0 1 2 3 4
S(cm²)
5 6 7 8
Lleads=10mm
9 10
Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values, for Transil).
1.E+00
IR(µA)
1.E-01
1.E-02
Tj=150°C
Tj=125°C
Tj=100°C
1.E-03
1.E-04
Tj=25°C
1.E-05
VR(V)
1.E-06
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Fig. 6-2: Reverse leakage current versus reverse voltage applied (typical values, for diode).
1.E+02
IR(µA)
1.E+01
1.E+00
Tj=150°C
Tj=125°C
Tj=100°C
1.E-01
Tj=25°C
1.E-02
VR(V)
1.E-03
0 50 100 150 200 250 300 350 400 450 500 550 600 650 700
Fig. 7: Transient peak forward voltage versus d
IF
/dt (90% confidence).
15
10
5
0
0
50
45
40
35
30
25
20
V
FP
(V)
IF=3A
Tj=125°C
50 100 dIF/dt(A/µs)
150 200 250 300 350 400 450 500
Fig. 8: Clamping voltage versus peak pulse current (maximum values).
10.0
Ipp(A) tp<500ns
Fig. 9: Junction capacitance versus reverse voltage applied on clamping characteristic (typical values).
100
C(pF)
F=1MHz
Vosc=30mV
RMS
Tj=25°C
Tj=25°C
Tj=125°C
1.0
Vcl(V)
0.1
160 165 170 175 180 185 190 195 200 205 210 215 220
10
1
4/5
10
VR(V)
100 1000
PACKAGE MECHANICAL DATA
DO-15
C A C
D
B
PKC-136
C
D
A
B
REF.
DIMENSIONS
Millimeters
Min.
6.05
Max.
6.75
Inches
Min.
0.238
Max.
0.266
2.95
3.53
0.116
0.139
26
0.71
31
0.88
1.024
0.028
1.220
0.035
Ordering type
PKC136
PKC136-RL
Marking
Partnumber
Diode cathode ring
Partnumber
Diode cathode ring
Package
DO-15
DO-15
Weight
0.4g
0.4g
Base qty
1000
6000
Delivery mode
Ammopack
Tape and reel
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