®
1N5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
RRM
I
F
P tot
T stg
T j
T
L
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Power Dissipation*
Storage and Junction Temperature Range
T a
= 25°C
T a
= 25
°
C
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
Value
70
15
430
- 65 to 200
- 65 to 200
230
THERMAL RESISTANCE
Symbol
R th(j-a)
Junction-ambient*
Test Conditions Value
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
* *
I
R
* *
T amb
= 25°C
T amb
= 25
°
C
T amb
= 25
°
C
T amb
= 25
°
C
Test Conditions
I
R
= 10
µ
A
I
F
= 1mA
I
F
= 15mA
V
R
= 50V
Min.
70
Typ.
Max.
0.41
1
0.2
Unit
V
V
µ
A
DYNAMIC CHARACTERISTICS
Symbol
C
τ
T amb
= 25°C
T amb
= 25
°
C
Test Conditions
V
R
= 0V
I
F
= 5mA f = 1MHz
Krakauer Method
Min.
Typ.
Max.
2
100
* On infinite heatsink with 4mm lead length
** Pulse test: t p
≤
300
µ s
δ <
2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Unit pF ps
Unit
V mA mW
°C
°
C
October 2001 - Ed: 1B 1/3
1N5711
Fig. 1: Forward current versus forward voltage at low level (typical values).
Fig. 2: Capacitance C versus reverse applied voltage V
R
(typical values).
Fig. 3: Reverse current versus ambient temperature.
Fig. 4: Reverse current versus continuous reverse voltage (typical values).
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1N5711
PACKAGE MECHANICAL DATA
DO-35
C
/
D
A
/
D
C
B
C
D
A
B
REF.
DIMENSIONS
Millimeters
Min.
3.05
Max.
4.50
Inches
Min.
0.120
Max.
0.177
1.53
2.00
0.060
0.079
28.00
0.458
0.558
1.102
0.018
0.022
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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