STMicroelectronics HIGH EFFICIENCY FAST RECOVERY DIODES Datasheet
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BYW29/F/FP/G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM trr (max)
V
F
(max)
8 A
200 V
25 ns
0.85 V
■
■
■
■
FEATURES AND BENEFITS
Very Low Forward Losses
Negligible switching losses
High surge current capability
Insulated packages
TO-220FPAC):
Insulation voltage: 2000 VDC
(ISOWATT220AC,
Typical insulation capacitance = 12 pF
A
K
K
A
NC
D
2
PAK
BYW29G-200
K
A
TO-220FPAC
BYW29FP-200
DESCRIPTION
Single rectifier suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC and D
2
PAK, this device is intended for use in high frequency inverters, free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ
= 0.5
D
2
PAK /
I
FSM
Tstg
Tj
TO-220FPAC
Surge non repetitive forward current
(All pins connected)
Storage and junction temperature range
Maximum operating junction temperature
TO-220AC
BYW29-200
K
A
K
ISOWATT220AC
BYW29F-200
A
Tc =120°C
Tc = 100°C tp=10ms sinusoidal
Value
200
16
8
80
- 65 to + 150
+ 150
Unit
V
A
A
A
°C
May 2002 - Ed: 4B
1/7
BYW29/F/FP/G-200
THERMAL RESISTANCE
Symbol Parameter
Rth (j-c) Junction to case thermal resistance TO-220AC
D2PAK
ISOWATT220AC
TO-220FPAC
Value
2.8
5
5.5
Unit
°
C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
V
R
*
F **
Parameter
Reverse leakage current V
R
= V
RRM
Forward voltage drop
I
I
F
F
Test Conditions
= 5 A
= 10 A
T j
= 25°C
T j
= 100
°
C
T j
= 125
°
C
T j
= 125
°
C
T j
= 25
°
C I
F
= 10 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
µ s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.040 I
F
2
(RMS)
Min.
Typ.
Max.
Unit
10
µ
A
0.6
mA
0.85
V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit t rr
Reverse recovery time
T j
= 25°C
Irr = 0.25 A
25 ns I
F
= 0.5A
I
R
= 1A
T j
= 25
°
C I
F
= 1A dI
F
/dt = -50A/
µ s V
R
=
30V
35 t fr
Forward recovery time
T j
= 25
°
C dI
F
/dt = 100A/
µ s
I
F
= 1A
15 ns
V
FP
Peak forward
V
FR
= 1.1 x V
F max
Obsolete Product(s) - Obsolete Product(s)
T j
= 25 C I
F
= 1A dI
F
/dt = 100A/
µ s 2
V voltage Obsolete Product(s) - Obsolete Product(s)
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BYW29/F/FP/G-200
Fig.1 : Average forward power dissipation versus average forward current.
12
PF(av)(W)
δ
= 0.05
δ
= 0.1
δ
= 0.2
10
8
6
4
2
0
0 1 2 3 4
IF(av)(A)
5 6 7
δ
= 0.5
δ
= 1
T
8
δ
=tp/T
9 10 tp
11
Fig.2 : Peak current versus form factor.
160
IM(A)
140
120
100
80
60
P = 10W
40
20
0
0.0
P = 5 W
0.1
δ
0.2
P = 15W
0.3
0.4
0.5
0.6
0.7
IM
δ
=tp/T
T tp
0.8
0.9
1.0
Fig.3 : Forward voltage drop versus forward current (maximum values).
100.0
IFM(A)
10.0
Tj=125°C
Tj=25°C
Fig.4-1 : Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC,
D
2
PAK).
1.0
Zth(j-c)/Rth(j-c)
δ = 0.5
δ
= 0.2
δ = 0.1
1.0
Single pulse
0.1
0.0
0.2
0.4
0.6
0.8
VFM(V)
1.0
1.2
1.4
1.6
1.8
0.1
1.E-03 1.E-02 tp(s)
1.E-01
δ
=tp/T
T tp
1.E+00
Fig.4-2 :Relative variation of thermal impedance junction to case versus pulse duration
(TO-220FPAC, ISOWATT220AC).
Fig.5-1 : Non repetitive surge peak forward current versus overload duration (TO-220AC, D
2
PAK).
Zth(j-c)/Rth(j-c) IM(A)
1.0
δ
= 0.5
80 Obsolete Product(s) - Obsolete Product(s)
60
δ
= 0.2
δ
= 0.1
Obsolete Product(s) - Obsolete Product(s)
40 0.1
Tc=25°C
Single pulse
Tc=75°C
30
Tc=120°C
T
20
10
I M t(s)
0.0
1.E-03 1.E-02 tp(s)
1.E-01
δ
=tp/T
1.E+00 tp
1.E+01
0
1.E-03 t
δ
=0.5
1.E-02 1.E-01 1.E+00
3/7
BYW29/F/FP/G-200
50
40
Fig.5-2 : Non repetitive surge peak forward current versus overload duration (TO-220FPAC,
ISOWATT220AC).
60
IM(A)
Tc=25°C
Tc=75°C
30
20
10
I M
0
1.E-03 t
δ
=0.5
1.E-02 t(s)
1.E-01
Tc=100°C
1.E+00
Fig.6 : Average current versus ambient temperature. (
δ
= 0.5)
10
IF(av)(A)
9
8
7
4
3
2
6
5
1
0
0 25
Rth(j-a)=Rth(j-c) ISOWATT220AC TO-220AC/D²PAK
TO-220FPAC
Rth(j-a)=15°C:W
50
Tamb(°C)
75 100 125 150
Fig.7 : Junction capacitance versus reverse voltage applied (Typical values).
Fig.8 : Reverse recovery charges versus dI
F
/dt
(90%confidence).
100
C(pF)
F=1MHz
Vosc=30mV
Tj=25°C
1000
Qrr(nC)
IF=8A
VR=100V
Tj=100°C
100
10
1 10
VR(V)
100 1000
10
10 dIF/dt(A/µs)
100 1000
Fig.9 : Peak reverse recovery current versus dIF/dt (90% confidence).
Fig.10 : Dynamic parameters versus junction temperature.
IRM(A)
1.50
Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]
100
IF=8A
Obsolete Product(s) - Obsolete Product(s)
1.25
IF=8A
VR=100V
Obsolete Product(s) - Obsolete Product(s)
10
0.75
IRM
0.50
0.25
QRR
1
10 dIF/dt(A/µs)
100 1000
0.00
0 25 50
Tj(°C)
75 100 125 150
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BYW29/F/FP/G-200
70
60
50
40
30
20
10
0
0
Fig.11 : Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) for
D
2
PAK.
80
Rth(j-a)(°C/W)
2 4 6 8
S(cm²)
10 12 14 16 18 20
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
L2
E
C2
A
REF.
A
A1
A2
DIMENSIONS
Millimeters Inches
Min.
4.40
Max.
4.60
Min.
0.173
Max.
0.181
2.49
0.03
2.69
0.23
0.098
0.106
0.001
0.009
L
L3
A1
D
C R
B
B2
C
C2
D
0.70
1.14
0.45
1.23
8.95
0.93
1.70
0.60
1.36
9.35
0.027
0.037
0.045
0.067
0.017
0.024
0.048
0.054
0.352
0.368
G
B2
B
A2
E
G
L
L2
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
M *
V2
Obsolete Product(s) - Obsolete Product(s)
* FLAT ZONE NO LESS THAN 2mm
L3
M
R
1.40
2.40
1.75
3.20
0.40 typ.
0.055
0.069
0.094
0.126
0.016 typ.
0° 8° 0° 8° V2
Obsolete Product(s) - Obsolete Product(s)
FOOT PRINT (in millimeters)
16.90
10.30
3.70
1.30
5.08
8.90
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BYW29/F/FP/G-200
PACKAGE MECHANICAL DATA
TO-220AC
L2
F
H2
G
Ø I
L5
L6
F1
L9
L4
C
D
A
M
E
L7
REF.
F
F1
G
H2
L2
D
E
A
C
DIMENSIONS
Millimeters Inches
Min.
4.40
Max.
4.60
Min.
0.173
Max.
0.181
1.23
2.40
0.49
1.32
2.72
0.70
0.048
0.094
0.019
0.051
0.107
0.027
L4
L5
L6
L7
0.61
1.14
0.88
1.70
0.024
0.034
0.044
0.066
4.95
5.15
0.194
0.202
10.00
10.40
0.393
0.409
16.40 typ.
0.645 typ.
13.00
2.65
6.20
14.00
2.95
15.25
15.75
0.600
0.620
6.60
L9
M
3.50
Diam. I 3.75
3.93
2.6 typ.
3.85
0.511
0.104
0.244
0.137
0.147
0.551
0.116
0.259
0.154
0.102 typ.
0.151
PACKAGE MECHANICAL DATA
TO-220FPAC
REF.
DIMENSIONS
Millimeters Inches
A
H
L6
Dia
B
E
F
A
B
D
Min.
4.4
2.5
2.5
0.45
0.75
Max.
4.6
2.7
2.75
0.70
1
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.018
0.027
0.030
0.039
F1 1.15
1.70
0.045
0.067
L7
L3
Obsolete Product(s) - Obsolete Product(s)
D
G
G1
4.95
2.4
10
5.20
2.7
10.4
0.195
0.205
0.094
0.106
0.393
0.409
L2 16 Typ.
0.63 Typ.
F1
L3 28.6
30.6
1.126
1.205
L4
G1
G
F E
L4
L5
L6
L7
Dia.
9.8
2.9
15.9
9.00
3.00
10.6
3.6
16.4
9.30
3.20
0.386
0.417
0.114
0.142
0.626
0.646
0.354
0.366
0.118
0.126
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BYW29/F/FP/G-200
PACKAGE MECHANICAL DATA
ISOWATT220AC
L2
F
H
F1
L6
L3
B
A
D E
L7
REF.
H
L2
L3
L6
L7
Diam
A
B
D
E
F
F1
G
2.40
0.40
0.75
1.15
4.95
DIMENSIONS
Millimeters Inches
Min.
4.40
2.50
Max.
4.60
2.70
Min.
0.173
0.098
Max.
0.181
0.106
2.75
0.70
1.00
1.70
5.20
0.094
0.016
0.030
0.045
0.195
0.108
0.028
0.039
0.067
0.205
10.00
10.40
0.394
0.409
16.00 Typ.
0.630 Typ.
28.60
30.60
1.125
1.205
15.90
16.40
0.626
0.646
9.00
3.00
9.30
3.20
0.354
0.366
0.118
0.126
G
Type Marking Package Weight Base Qty Delivery Mode
BYW29-200 BYW29-200 TO-220AC
BYW29F-200 BYW29F-200 ISOWATT220AC
1.86 g
2.2 g
50
50
Tube
Tube
2 g 50 Tube BYW29FP-200 BYW29FP-200 TO-220FPAC
BYW29G-200 BYW29G-200 D
2
PAK 1.48 g 50 Tube
■
■
■
■
■
Cooling method: by conduction (C)
Recommended torque value (ISOWATT220AC, TO-220FPAC): 0.55 N.m
Maximum torque value: 0.7 N.m
Recommended torque value (TO-220AC): 0.8 N.m
Maximum torque value: 1.0 N.m
■
Epoxy meets UL94, V0
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by Obsolete Product(s) - Obsolete Product(s)
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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