STL73
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n n
LOW SPREAD OF DYNAMIC PARAMETERS n
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION n
VERY HIGH SWITCHING SPEED
APPLICATIONS n
COMPACT FLUORESCENT LAMPS (CFLS)
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STL series is designed for use in Compact
Fluorescent Lamps.
Table 1: Order Codes
Part Number
STL73
# See:note on page 2
Marking
L73 L or (#)
L73 H
Figure 1: Package
TO-92
Figure 2: Internal Schematic Diagram
Package
TO-92
Packaging
Bulk
July 2005
Rev. 1
1/6
STL73
Table 2: Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T
J
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5ms)
Base Current
Base Peak Current (t p
< 5ms)
Total Dissipation at T
C
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
V
(BR)EBO
1.5
3
0.5
1.5
1.1
-65 to 150
150
Table 3: Thermal Data
R thj-amb
Thermal Resistance Junction-Ambient Max 112 o
C/W
Table 4: Electrical Characteristics (T case
= 25 o
C unless otherwise specified)
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off Current
(V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V T j
= 125 o
C i
E
= 10 mA
1
5 mA mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0 )
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
C
= 10 mA
I
C
= 0.3 A I
B
= 60 mA
I
C
= 0.6 A I
B
= 120 mA
I
C
= 1 A I
B
= 250 mA
I
C
= 0.6 A I
B
= 120 mA
9
400
0.15
0.25
0.4
18
0.4
0.6
1
V
V
V
V
V
V
BE(sat)
* Base-Emitter Saturation
Voltage h
FE
DC Current Gain #
RESISTIVE LOAD
Rise Time
Storage Time
I
C
= 0.6 A V
CE
= 3 V
Group L
Group H
10
15
4
0.95
1.1
16
21
10
V t f
I
C
= 1.5 A V
CE
= 5 V
I
C
= 1 V
CC
= 125 V
I
B1
= -I
B2
= 200 mA t p
(see figure 4)
= 25 µs 1
4
0.7
µs
µs
µs t f
Fall Time
INDUCTIVE LOAD
Fall Time
I
C
= 0.3 V
Clamp
= 300 V
I
B1
= -I
B2
= 60 mA L = 3 mH 0.3
µs
(see figure 3)
* Pulsed: Pulsed duration = 300 µs, duty cycle
≤ 1.5
%.
# The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
Unit
W
°C
°C
A
A
A
V
A
V
V
2/6
Figure 3: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 4: Restistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
STL73
3/6
STL73
DIM.
R
S1 e1
L
W
V
D
E e
A b
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TO-92 BULK SHIPMENT MECHANICAL DATA
mm.
TYP MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
5 O
0102782 C
4/6
Figure 5: Revision History
Release Date
11-Jul-2005
Version
1 First Release.
Change Designator
STL73
5/6
STL73
6/6
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