STD60N3LH5
N-channel 30 V, 0.0072 Ω typ., 48 A STripFET™ V Power MOSFET
in a DPAK package
Datasheet
-
not recommended for new design
Features
TAB
DPAK
1
3
Figure 1. Internal schematic diagram
Order code V
DS @ Tjmax
R
DS(on) max
STD60N3LH5 35 V 0.008 Ω
• R
DS(on)
* Q g
industry benchmark
• Extremely low on-resistance R
DS(on)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses
I
D
48 A
Applications
•
Switching applications
*
'7$%
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’
STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
6
$0Y
Obsolete Product(s) - Obsolete Product(s)
Table 1. Device summary
Order code Marking Packages Packaging
STD60N3LH5 60N3LH5 DPAK Tape and reel
August 2013 DocID14079 Rev 5
This is information on a product in full production. This is information on a product still in production but not recommended for new designs.
1/19 www.st.com
3
4
5
1
2
Contents
Contents
STD60N3LH5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Obsolete Product(s) - Obsolete Product(s)
2/19 DocID14079 Rev 5
STD60N3LH5 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
DS
V
GS
I
D
(1)
I
D
I
DM
(2)
Drain-source voltage
Drain-source voltage @ T
Gate-source voltage jmax
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
P
TOT
Total dissipation at T
C
= 25 °C
Derating factor
E
AS
(3)
T j
T stg
Single pulse avalanche energy
Operating junction temperature
Storage temperature
1.
Limited by wire bonding.
2.
Pulse width limited by safe operating area.
3.
Starting T j
= 25 °C, I
D
= 24 A, V
DD
= 12 V.
C
C
= 25 °C
= 100 °C
Value
-55 to 175
30
35
± 20
48
42.8
192
60
0.4
160
Symbol
Table 3. Thermal resistance
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
1.
When mounted on FR-4 board of 1inch², 2oz Cu
Value
2.5
50
Unit
°C/W
°C/W
Unit
V
A
A
V
V
A
W
W/°C mJ
°C
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 3/19
19
Electrical characteristics STD60N3LH5
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4. Static
Test conditions
V
(BR)DSS
Drain-source breakdown
Voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 250 µA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
V
V
V
DS
DS
GS
= 30 V
= 30 V, T
= ± 20 V
C
= 125 °C
Static drain-source on-resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 24 A
V
GS
= 5 V, I
D
= 24 A
Min.
Typ.
30
1
Max.
Unit
1
10
V
µA
µA
± 100 nA
1.8
3 V
0.0072
0.008
Ω
0.0088
0.011
Ω
Symbol Parameter
Table 5. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
C rss
Q g
Q gs
Q gd
Q gs1
Q gs2
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V th
gate-to-source charge
Post V th
gate-to-source charge
V
DS
=25 V, f=1 MHz,
V
GS
=0
V
DD
=15 V, I
D
= 48 A
V
GS
=5 V
(
Figure 14 )
V
DD
=15 V, I
D
= 48 A
V
GS
=5 V
(
Figure 19 )
-
-
-
-
-
-
-
-
1350 1620 pF
265 318 pF
32
8.8
4.7
2.2
2.2
2.5
38
12.3
nC
6.6
3.1
nC nC
3.1
3.5
f = 1 MHz, gate DC
Bias = 0, Obsolete Product(s) - Obsolete Product(s)
I
D
= 0
1.1
1.3
Ω pF nC nC
4/19 DocID14079 Rev 5
STD60N3LH5 Electrical characteristics
Symbol t d(on) t r t d(off) t f
Table 6. Switching on/off (resistive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
=10 V, I
D
= 24 A,
R
G
=4.7
Ω,
V
GS
= 10 V
(
Figure 13
and
Figure 18 )
Min.
Typ.
Max.
Unit
-
-
-
-
6
33
19
4.2
-
-
-
ns ns ns ns
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
V
SD t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
I
SD
=24 A, V
GS
=0
I
SD
=48 A, di/dt =100 A/µs,
V
DD
=20 V, ( Figure 15
)
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
48
192
1.1
25
18.5
1.5
A
A
V ns nC
A
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 5/19
19
Electrical characteristics STD60N3LH5
2.1 Electrical characteristics (curves)
Figure 3. Thermal impedance
,
'
$
Figure 2. Safe operating area
+9
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7M &
7F &
6LQJOH
SXOVH
2SHUDWLRQLQWKLVDUHDLV
/LPLWHGE\PD[5
V
PV
PV
9
'6
9
Figure 4. Output characteristics
100
80
60
40
20
0
0
Figure 5. Transfer characteristics
AM03360v1
I
D
(A)
160
140
120
1 2 3 4 5 V
GS
(V)
Figure 6. Normalized V
(BR)DSS
vs temperature Figure 7. Static drain-source on-resistance
Obsolete Product(s) - Obsolete Product(s)
6/19 DocID14079 Rev 5
STD60N3LH5
Figure 8. Gate charge vs gate-source voltage
Electrical characteristics
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 7/19
19
STD60N3LH5 Test circuits
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3.3
μ F
V
DD
P w
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
Figure 18. Switching time waveform t on td on t r t off td off t f
Obsolete Product(s) - Obsolete Product(s)
I
DM
90%
90%
10%
10% V
DS
I
D 0
V
DD
V
DD
90%
V
GS
0
10%
AM01472v1 AM01473v1
8/19 DocID14079 Rev 5
STD60N3LH5
Figure 19. Gate charge waveform
Test circuits
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 9/19
19
Package mechanical data
4 Package mechanical data
STD60N3LH5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
10/19 DocID14079 Rev 5
STD60N3LH5
Dim.
E1 e e1
H
L
(L1)
L2
L4
R
V2 b4 c c2
D
D1
E
A
A1
A2 b
Package mechanical data
Table 8. DPAK (TO-252) type A mechanical data mm
Typ.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
5.10
6.40
4.70
2.28
4.40
9.35
1.00
2.80
0.80
0.60
0.20
0°
6.60
4.60
10.10
1.50
1.00
8°
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 11/19
19
Package mechanical data
Figure 20. DPAK (TO-252) type A drawing
STD60N3LH5
Obsolete Product(s) - Obsolete Product(s)
0068772_K_type_A
12/19 DocID14079 Rev 5
STD60N3LH5
Dim.
c c2
D
D1
E
E1
A
A2 b b4
L
L1
L2
L4 e e1
H
Package mechanical data
Table 9. DPAK (TO-252) type E mechanical data mm
Typ.
Min.
2.18
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
6.73
2.286
4.572
9.94
1.50
10.34
1.78
2.74
0.89
1.27
1.02
Obsolete Product(s) - Obsolete Product(s)
DocID14079 Rev 5 13/19
19
Package mechanical data
Figure 21. DPAK (TO-252) type E drawing
STD60N3LH5
Obsolete Product(s) - Obsolete Product(s)
0068772_K_type_E
14/19 DocID14079 Rev 5
STD60N3LH5
Figure 22. DPAK footprint
(a)
Package mechanical data
Footprint_REV_K
Obsolete Product(s) - Obsolete Product(s) a.
All dimensions are in millimeters
DocID14079 Rev 5 15/19
19
Packaging mechanical data
5 Packaging mechanical data
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
STD60N3LH5
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm mm
Dim.
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
C
D
G
A
B
N
T
Min.
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
Max.
330
13.2
18.4
22.4
2500
2500
Obsolete Product(s) - Obsolete Product(s)
16/19 DocID14079 Rev 5
STD60N3LH5
B1
T
K0
Packaging mechanical data
Top cover tape
Figure 23. Tape for DPAK (TO-252)
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
F
E
W
B0
For machine ref. only including draft and radii concentric around B0
A0 P1
User direction of feed
D1
R
Bending radius
User direction of feed
AM08852v1
REEL DIMENSIONS
Figure 24. Reel for DPAK (TO-252)
40mm min.
Access hole
At slot location
T
B
D
Obsolete Product(s) - Obsolete Product(s)
A
C
N
Full radius
DocID14079 Rev 5
Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
17/19
19
Revision history STD60N3LH5
Date
19-Oct-2007
23-Sep-2008
20-Apr-2009
05-Apr-2011
09-Aug-2013
Revision
Table 11. Document revision history
Changes
1
2
3
4
5
First release
V
GS
value has been changed on
Table 2 and
Table 5
– Inserted typical maximum value in V
GS(th)
parameter
–
Figure 5: Transfer characteristics
has been updated
– Added device in TO-220
– Added device in Short IPAK
– Added max values in Table 5: Dynamic
– V
GS
value has been changed in Table 2
and Table 4
The part numbers STP60N3LH5, STU60N3LH5 and STU60N3LH5-S have been moved to a separate datasheet
Obsolete Product(s) - Obsolete Product(s)
18/19 DocID14079 Rev 5
STD60N3LH5
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