STB120N4LF6
STD120N4LF6
N-channel 40 V, 3.1 m Ω , 80 A DPAK, D²PAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes
STB120N4LF6
STD120N4LF6
V
DSS
40 V
40 V
■
■
Logic level drive
100% avalanche tested
R
DS(on) max
4.0 m Ω
4.0 m Ω
Application
■ Switching applications
– Automotive
I
D
80 A
80 A
Description
This product is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
1
DPAK
3
1
D²PAK
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
STB120N4LF6
STD120N4LF6
Marking
120N4LF6
Packages
D²PAK
DPAK
Packaging
Tape and reel
February 2011 Doc ID 16919 Rev 2 1/18 www.st.com
18
5
6
3
4
1
2
Contents
Contents
STB120N4LF6, STD120N4LF6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
I
DM
(2)
P
TOT
T stg
T j
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
C
GS
= 0)
= 25 °C
Operating junction temperature
1.
Limited by wire bonding
2.
Pulse width limited by safe operating area
C
C
= 25 °C
= 100 °C
Table 3.
Symbol
Thermal resistance
Parameter
R thj-case
Thermal resistance junction-case max
R thj-pcb
Thermal resistance junction-pcb max
1.
When mounted on 1 inch
2
2 oz. Cu board.
(1)
Table 4.
Symbol
Avalanche data
Parameter
I
AV
E
AS
(1)
Not-repetitive avalanche current
Single pulse avalanche energy
1.
Starting Tj = 25 °C, I
D
= 40 A, V
DD
= 25 V
Value
40
± 20
80
80
320
110
-55 to 175
Unit
A
A
W
V
V
A
°C
DPAK
Value
D²PAK
1.36
50 35
Unit
°C/W
°C/W
Value
40
394
Unit
A mJ
Doc ID 16919 Rev 2 3/18
4/18
Electrical characteristics STB120N4LF6, STD120N4LF6
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
Static
Parameter
V
(BR)DSS
Drain-source breakdown
Voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= 20 V
V
DS
= 20 V,Tc = 125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 5 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
Min.
Typ.
Max.
Unit
40
1
-
-
-
-
3.6
3.1
1
10
± 100 nA
V
µA
µA
3
5.0
4.0
V m Ω m Ω
Table 6.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R
G
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V
DS
= 25 V, f=1 MHz,
V
GS
= 0 V
V
DD
= 20 V, I
D
= 80 A
V
GS
= 10 V
(see Figure 14)
f=1 MHz open drain
Min
-
-
4300
650
375
80
15
15
1.35
Typ.
Max.
Unit
-
pF pF pF nC nC nC
Ω
Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6 Electrical characteristics
Table 7.
Symbol t d(on) t r t d(off) t f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 20 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Figure 15
Min.
Typ.
Max.
Unit
-
-
15
95
125
45
-
ns ns ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 40 A, V
GS
= 0
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 32 V, T
J
= 150 °C
Figure 17
Min.
Typ.
Max.
Unit
-
-
80
320
1.1
A
A
V
-
50
85
3.5
ns nC
A
Doc ID 16919 Rev 2 5/18
Electrical characteristics STB120N4LF6, STD120N4LF6
Figure 2.
Safe operating area
I
D
(A)
Tj=175°C
Tc=25°C
S ingle p u l s e
100 a tion in thi s a
i s a re
D
S
(on) a x R
Oper
Limited
AM0 8 964v1
100 µs
Figure 3.
Thermal impedance
1m s
10
10m s
1
0.1
0.1
1 10 V
D S
(V)
Figure 4.
Output characteristics
I
D
(A)
V
G S
=10V
3 50
3 00
250
200
150
100
50
0
0 0.5
1.0
1.5
4V
3 V
AM0 8 965v1
5V
V
D S
(V)
Figure 5.
Transfer characteristics
I
D
(A)
3 00
200
100
0
0 1 2
V
D S
=2V
3
AM0 8 966v1
4 V
G S
(V)
Figure 6.
Normalized B
VDSS
vs temperature Figure 7.
Static drain-source on resistance
AM0 8 967v1 AM0 8 96 8 v1
BV
D SS
(norm)
R
D S (on)
(m Ω )
I
D
=1mA
V
G S
=10V
1.05
3 .5
1.00
3 .0
0.95
2.5
0.90
0.
8 5
-75 -25 25 75 125 175 T
J
(°C)
2.0
0 20 40 60 8 0 I
D
(A)
6/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM0 8 969v1
V
G S
(V)
C
(pF)
12
V
DD
=20V
I
D
= 8 0A
10
AM0 8 970v1
Ci ss
8
1000
6
4
Co ss
Cr ss
2
0
0 20 40 60 8 0 Q g
(nC)
100
0.1
1.0
1 10 V
D S
(V)
Figure 10.
Normalized gate threshold voltage vs temperature
AM0 8 971v1
V
G S (th)
(norm)
I
D
=250 µ A
1.2
Figure 11.
Normalized on resistance vs temperature
AM0 8 972v1
R
D S (on)
(norm)
I
D
=40A
V
G S
=10V
2.0
1.0
1.5
0.
8
0.6
0.4
0.2
0
-75 -25 25 75 125 175 T
J
(°C)
Figure 12.
Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
1.0
AM0 8 97 3 v1
0.9
T
J
=25°C
0.
8
0.5
0
-75 -25 25 75 125 175 T
J
(°C)
0.7
0.6
0.5
0.4
0 20
T
J
=175°C
40 60 8 0 I
S D
(A)
Doc ID 16919 Rev 2 7/18
Test circuits
3 Test circuits
STB120N4LF6, STD120N4LF6
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 18.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 16919 Rev 2 9/18
Package mechanical data
E
E1 e e1
H
J1 c c2
D
D1
A
A1 b b2
L
L1
L2
R
V2
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
0.45
1.23
8.95
7.50
4.40
0.03
0.70
1.14
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0° mm
Typ.
2.54
0.4
STB120N4LF6, STD120N4LF6
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
10/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6
Figure 19.
D²PAK (TO-263) drawing
Package mechanical data
0079457_R
Figure 20.
D²PAK footprint
(a)
16.90
12.20
9.75
a.
All dimension are in millimeters
Doc ID 16919 Rev 2
3 .50
1.60
5.0
8
Footprint
11/18
Package mechanical data
H
L
L1
L2
L4
D1
E
E1 e e1
R
V2 b4 c c2
D
A
A1
A2 b
Table 10.
DPAK (TO-252) mechanical data
Dim.
Min.
5.20
0.45
0.48
6.00
2.20
0.90
0.03
0.64
6.40
4.40
9.35
1
0.60
0° mm
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
STB120N4LF6, STD120N4LF6
Max.
5.40
0.60
0.60
6.20
2.40
1.10
0.23
0.90
6.60
4.60
10.10
1
8°
12/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6
Figure 21.
DPAK (TO-252) drawing
Package mechanical data
006 8 772_G
Figure 22.
DPAK footprint
(b)
6.7
1.
8 3
1.6
6.7
1.6
2.
3
2.
3
AM0 88 50v1 b.
All dimension are in millimeters
Doc ID 16919 Rev 2 13/18
Packaging mechanical data
5 Packaging mechanical data
STB120N4LF6, STD120N4LF6
D1
E
F
K0
P0
A0
B0
D
P1
P2
R
T
W
Table 11.
D²PAK (TO-263) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Reel mm
Max.
330
13.2
26.4
30.4
1000
1000
14/18 Doc ID 16919 Rev 2
STB120N4LF6, STD120N4LF6 Packaging mechanical data
P2
R
T
W
K0
P0
P1
D
D1
E
F
A0
B0
B1
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50
Base qty.
Bulk qty.
Reel mm
Max.
330
13.2
18.4
22.4
2500
2500
Doc ID 16919 Rev 2 15/18
Packaging mechanical data STB120N4LF6, STD120N4LF6
Figure 23.
Tape for D²PAK(TO-263) and DPAK (TO-252)
T
Top cover t a pe
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
K0
F
E
W
B0
A0 P1
U s er direction of feed
D1
R
16/18
U s er direction of feed
Figure 24.
Reel for D²PAK(TO-263) and DPAK (TO-252)
REEL DIMEN S ION S
40mm min.
Acce ss hole
At s l ot loc a tion
B
D
C
A
Bending r a di us
AM0 88 52v2
T
N
F u ll r a di us
Doc ID 16919 Rev 2
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
STB120N4LF6, STD120N4LF6 Revision history
Table 13.
Document revision history
Date Revision
14-Dec-2009
23-Feb-2011
1
2
Changes
First release
Document status promoted from preliminary data to datasheet.
Doc ID 16919 Rev 2 17/18
STB120N4LF6, STD120N4LF6
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18/18 Doc ID 16919 Rev 2
