STS3P6F6
8
7
6 5
1
SO-8
2
3
4
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet
-
production data
Features
Order code V
DSS
STN3P6F6 60 V
R
DS(on)max
0.16
Ω
@ 10 V
• R
DS(on)
* Qg industry benchmark
• Extremely low on-resistance R
DS(on)
• High avalanche ruggedness
• Low gate drive power losses
I
D
3 A
Applications
•
Switching applications
Figure 1. Internal schematic diagram
D (5,6,7,8)
Description
This device is a P-channel Power MOSFET developed using the 6 th
generation of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest
R
DS(on)
in all packages.
G (4)
S (1,2,3)
Note:
Order code
STS3P6F6
Table 1. Device summary
Marking
3K60
Package
SO-8
Packaging
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2 1/16 www.st.com
16
5
6
3
4
1
2
Contents
Contents
STS3P6F6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 DocID024437 Rev 2
STS3P6F6 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed) pcb pcb
= 25 °C
= 100 °C
Total dissipation at T pcb
= 25 °C
T j
P stg
Operating junction temperature
Storage temperature
1. Pulse width is limited by safe operating area.
Value
60
± 20
3
2
12
2.7
-55 to 150
Note:
Table 3. Thermal data
Symbol Parameter
R thj-pcb
(1)
Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 15 mm
2
, 2 Oz Cu, t<10 sec
Value
47
For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed.
Unit
°C/W
Unit
A
A
A
V
V
W
°C
DocID024437 Rev 2 3/16
Electrical characteristics STS3P6F6
(Tcase = 25 °C unless otherwise specified).
Symbol Parameter
Table 4. On /off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
V
GS
= 0, I
D
= 250 µA
Zero gate voltage drain current
V
GS
= 0, V
DS
= 60 V
V
GS
= 0, V
DS
= 60 V,
T
C
=125 °C
Gate-body leakage current
V
DS
= 0, V
GS
= ± 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 1.5 A
Min.
Typ.
Max.
Unit
60
1
10
V
µA
µA
2
0.13
±100 nA
4
0.16
V
Ω
Symbol
C iss
C oss
C rss
Q
Q
Q g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
GS
= 0, V
DS
= 48 V, f = 1 MHz
Min.
Typ.
Max.
Unit
-
340
40
-
pF pF
20 pF
V
DD
= 48 V, I
D
= 3 A,
V
GS
= 10 V
(see
Figure 14 )
-
-
-
6.4
1.7
1.7
-
-
nC nC nC
Note:
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 48 V, I
D
= 1.5 A,
R
G
= 4.7
Ω , V
GS
= 10 V
(see Figure 13
)
Min.
-
-
-
-
Typ.
Max.
Unit
64
5.3
14
3.7
-
-
-
ns ns ns ns
For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed.
4/16 DocID024437 Rev 2
STS3P6F6
Note:
Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
V
GS
SD
1. Pulse width limited by safe operating area.
2. Pulse duration = 300 µs, duty cycle 1.5%
= 0, I
SD
= 3 A
= 5 A, di/dt = 100 A/µs
V
DD
= 16 V, T j
(see
Figure 15
= 150 °C
)
-
-
-
-
-
-
Min.
Typ.
Max. Unit
3
12
1.1
20
17.8
1.8
A
A
V ns nC
A
For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed.
DocID024437 Rev 2 5/16
Electrical characteristics STS3P6F6
, '
$
Figure 2. Safe operating area
*,3*6$
.
Figure 3. Thermal impedance
*,3*6$ į
'6RQ
2SHUDWLRQLQWKLVDUHDLV
/LPLWHGE\PD[5
PV
PV
V
7M &
7SFE &
6LQJOHSXOVH
9 '6 9
Figure 4. Output characteristics
AM15340v1
I
D
(A)
VGS= 10 V
25
2 4 6 Q g
(nC)
6LQJOHSXOVH
SFE
W S V
Figure 5. Transfer characteristics
AM15346v1
I
D
(A)
25
VDS= 9 V
20 VGS= 6 V
20
15
15
VGS= 5 V
10 10
5
VGS= 4 V
5
0
0 5 10 V
DS
(V)
0
2 3 4 5 6 7 8 9 10 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM15341v1
V
GS
(V)
10
V
DD
=30V
I
D
=3A
Figure 7. Static drain-source on-resistance
R
DS(on)
(m Ω )
180
V
GS
=10V
AM15350v1
8
160
6
140
4
120
2
0
0
100
1 2 3 4 5 6 7 8 9 I
D
(A)
6/16 DocID024437 Rev 2
STS3P6F6 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
400
AM15342v1
Figure 9. Normalized V
(BR)DSS
vs temperature
AM15349v1
V
(BR)DSS
(norm)
1.15
I
D
= 1mA
350
Ciss
300 1.10
250
200
150
1.05
1
100
50
0
0 10 20 30 40 50
Coss
Crss
V
DS
(V)
0.95
0.90
-55 -30 -5 20 45 70 95 120 T
J
(°C)
Figure 10. Normalized gate threshold voltage vs temperature
AM15344v1 V
GS(th)
(norm)
1.10
1
0.90
0.80
0.70
I
D
=250 µA
Figure 11. Normalized on-resistance vs temperature
AM15350v1
R
DS(on)
(norm)
2
V
GS
=10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-55 -30 -5 20 45 70 95 120 T
J
(°C)
0.60
-55 -30 -5 20 45 70 95 120 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM15345v1
V
SD
(V)
T
J
=-55°C
1.05
0.95
T
J
=25°C
0.85
0.75
0.65
0.55
2 4 6
T
J
=175°C
8 I
SD
(A)
DocID024437 Rev 2 7/16
Test circuits
3 Test circuits
STS3P6F6
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
AM11256v1 AM11255v1
Figure 15. Test circuit for inductive load switching and diode recovery times
AM11257v1
8/16 DocID024437 Rev 2
STS3P6F6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID024437 Rev 2 9/16
Package mechanical data
Figure 16. SO-8 drawing
STS3P6F6
0016023_G_FU
10/16 DocID024437 Rev 2
STS3P6F6
Dim.
b1 c c1
D
E
E1
A
A1
A2 b
L1
L2 k ccc e h
L
Min.
Table 8. SO-8 mechanical data mm
Typ.
0.10
1.25
0.31
0.28
0.10
0.10
4.80
5.80
3.80
0.25
0.40
4.90
6.00
3.90
1.27
1.04
0.25
0°
Package mechanical data
8°
0.10
Max.
1.75
0.25
0.51
0.48
0.25
0.23
5.00
6.20
4.00
0.50
1.27
DocID024437 Rev 2 11/16
Package mechanical data
Figure 17.
(a)
SO-8 recommended footprint
STS3P6F6
Footprint_0016023_G_FU
12/16 a.
All dimensions are in millimeters.
DocID024437 Rev 2
STS3P6F6
5 Packaging mechanical data
Packaging mechanical data
Figure 18. SO-8 tape and reel dimensions
DocID024437 Rev 2 13/16
Packaging mechanical data
Dim.
T
Ao
Bo
Ko
Po
P
A
C
D
N
8.1
5.5
2.1
3.9
7.9
Table 9. SO-8 tape and reel mechanical data mm
Min.
12.8
20.2
60
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
330
13.2
22.4
8.5
5.9
2.3
4.1
8.1
STS3P6F6
14/16 DocID024437 Rev 2
STS3P6F6 Revision history
Date
22-Mar-2013
14-Jul-2014
Revision
Table 10. Document revision history
Changes
1
2
First release.
– Modified: the entire typical values in
Table 6
– Modified:
Section 3: Test circuits
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
DocID024437 Rev 2 15/16
STS3P6F6
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16/16 DocID024437 Rev 2
