STR2N2VH5
N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5
Power MOSFET in a SOT-23 package
Datasheet — production data
Features
Order code
VDS
RDS(on) max
ID
PTOT
STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W
3
• Low on-resistance RDS(on)
2
• High avalanche ruggedness
1
• Low gate drive power loss
SOT-23
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
Table 1. Device summary
Order code
Marking
Packages
Packaging
STR2N2VH5
STD1
SOT-23
Tape and reel
July 2014
This is information on a product in full production.
DocID023799 Rev 4
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www.st.com
Contents
STR2N2VH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
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1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
20
V
VGS
Gate-source voltage
±8
V
ID(1)
Drain current (continuous) at Tpcb = 25 °C
2.3
A
ID (1)
Drain current (continuous) at Tpcb = 100 °C
1.4
A
Drain current (pulsed)
9.2
A
Total dissipation at Tpcb = 25 °C
0.35
W
IDM
(1)(2)
PTOT
(1)
Tstg
Tj
Storage temperature
°C
- 55 to 150
Max. operating junction temperature
°C
1. This value is rated according to Rthj-pcb
2. Pulse width is limited by safe operating area
Table 3. Thermal data
Symbol
Rthj-pcb(1)
Parameter
Thermal resistance junction-pcb max
Value
Unit
357
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
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Electrical characteristics
2
STR2N2VH5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
20
Unit
V
VGS = 0, VDS = 20 V
1
µA
VGS = 0, VDS = 20 V,
TC=125 °C
10
µA
VDS = 0, VGS = ± 8 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
0.7
V
VGS = 4.5 V, ID = 2 A
0.025
0.03
Ω
VGS = 2.5 V, ID = 2 A
0.031
0.04
Ω
Min.
Typ.
Max.
Unit
-
367
-
pF
-
92
-
pF
-
16
-
pF
-
4.6
-
nC
-
0.9
-
nC
-
1
-
nC
Min.
Typ.
Max.
Unit
-
4.8
-
ns
-
14.4
-
ns
-
17
-
ns
-
4
-
ns
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VGS = 0, VDS = 16 V, f = 1 MHz
VDD = 16 V, ID = 2 A,
VGS = 4.5 V
(see Figure 14)
Table 6. Switching times
Symbol
td(on)
Test conditions
Voltage delay time
tr (V)
Voltage rise time
td (off)
Current fall time
tf
4/13
Parameter
VDD = 16 V, ID = 2 A,
RG = 4.7 Ω, VGS = 4.5 V
(see Figure 15 and Figure 18)
Crossing time
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STR2N2VH5
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
2.3
A
ISDM
(1)
Source-drain current (pulsed)
-
9.2
A
VSD
(2)
Forward on voltage
VGS = 0, ISD = 2 A
-
1.1
V
trr
Reverse recovery time
-
10
ns
Qrr
Reverse recovery charge
-
24
nC
IRRM
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 16 V, Tj = 150 °C
(see Figure 18)
-
4.8
A
ISD
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
STR2N2VH5
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM18126v1
ID
(A)
AM18127v1
K
δ=0.5
0.2
0.1
10 -1
10
100µs
s
ai
r e n)
s a DS(o
i
h
R
nt
n i max
tio
ra by
e
d
Op ite
Lim
1
0.05
1ms
10ms
0.02
Single pulse
Tj=150°C
Tpcb=25°C
Single pulse
0.1
0.1
1
pcb
0.01
10 -2
VDS(V)
10
Figure 4. Output characteristics
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
tp(s)
Figure 5. Transfer characteristics
AM18128v1
ID (A)
VGS=2.5, 3.5, 4.5, 5.5, 6.5 V
AM18129v1
ID
(A)
VDS=4V
20
20
1.5V
16
16
12
12
8
8
4
4
0.5V
0
0
0
2
1
3
4
VDS(V)
Figure 6. Gate charge vs gate-source voltage
AM18130v1
VGS
(V)
VDD=10V
ID=2A
0.2
0
0.4
0.6
0.8
1
1.2
VGS(V)
Figure 7. Static drain-source on-resistance
AM18132v1
RDS(on)
(mΩ)
VGS=4.5V
26
6
25.6
25.2
4
24.8
2
24.4
0
0
6/13
24
2
4
6
Qg(nC)
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1
1.5
2
2.5
3
3.5
ID(A)
STR2N2VH5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM18133v1
C
(pF)
AM18134v1
VGS(th)
(norm)
1.2
ID=250µA
Ciss
1
0.8
100
Coss
0.6
0.4
0.2
Crss
0
-55 -30 -5
10
0
4
8
12
16
VDS(V)
Figure 10. Normalized on-resistance vs
temperature
AM18135v1
RDS(on)
20 45
70 95 120
TJ(°C)
Figure 11. Normalized V(BR)DSS vs temperature
AM18136v1
V(BR)DSS
(norm)
(norm)
ID=2A
VGS=10V
1.6
ID=1mA
1.1
1.4
1.2
1.05
1
0.8
1
0.6
0.4
0.95
0.2
0
-55 -30 -5
20 45
70 95 120
TJ(°C)
0.9
-55 -30 -5
20 45
70 95 120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM18137v1
VSD (V)
TJ=-55°C
0.9
TJ=25°C
0.8
0.7
TJ=150°C
0.6
0.5
0.5
0.9
1.3
1.7
2.1
ISD(A)
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Test circuits
3
STR2N2VH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/13
0
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10%
AM01473v1
STR2N2VH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
STR2N2VH5
Figure 19. SOT-23 mechanical drawing
0053390_I
Table 8. SOT-23 mechanical data
mm
Dim.
Min.
Max.
A
0.89
1.40
A1
0
0.10
B
0.30
0.51
C
0.085
0.18
D
2.75
3.04
e
0.85
1.05
e1
1.70
2.10
E
1.20
1.75
H
2.10
3.00
L
10/13
Typ.
0.60
S
0.35
0.65
L1
0.25
0.55
a
0°
8°
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STR2N2VH5
Package mechanical data
Figure 20. SOT-23 recommended footprint (a)
0.48
0.95
2.89
0.97
0.99
SOT-23 footp_I
a. Dimensions are in mm.
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Revision history
5
STR2N2VH5
Revision history
Table 9. Document revision history
12/13
Date
Revision
Changes
19-Oct-2012
1
First release.
14-Jan-2013
2
Modified: RDS(on) values
19-Mar-2014
3
– The part number STT5N2VH5 has been moved to a separate
datasheet
– Modified: the entire typical values in Table 5, 6 and 7
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
25-Jul-2014
4
– Modified: title, description and features
– Updated: Figure 12
– Minor text changes
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STR2N2VH5
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