®
2N2905A
2N2907A
SMALL SIGNAL PNP TRANSISTORS
DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar
Epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications.
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
V
CEO
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
= 0)
-60
-60
-5
V
V
V V
EBO
Emitter-Base Voltage (I
C
I
C
Collector Current -0.6
A
I
CM
P tot
T stg
T j
Collector Peak Current (t p
< 5 ms)
Total Dissipation at T amb
≤
25
for 2N2905A o
C
for 2N2907A
at T
C
≤
25 o
C
for 2N2905A
for 2N2907A
Storage Temperature
Max. Operating Junction Temperature
-0.8
0.6
0.4
3
1.8
-65 to 175
175
A
W
W
W
W o
C o
C
1/7 February 2003
2N2905A/2N2907A
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
TO-39
50
250
TO-18
83.3
375 o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
I
I
CEX
BEX
Collector Cut-off
Current (V
BE
= 0.5V)
Base Cut-off Current
(V
BE
= 0.5V)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
I
I
I
V
V
V
V
C
C
E
C
C
CB
CB
= -50 V T
CE
CE
= -50 V
= -30 V
= -30 V
= -10
µ
A
= -10 mA
= -10
µ
A
= -150 mA I
I
C
= -500 mA I
= -150 mA I
C
= -500 mA I j
= 150
B o
C
B
= -50 mA
B
B
= -15 mA
= -15 mA
= -50 mA
-60
-60
-5
-10
-10
-50
-50
-0.4
-1.6
-1.3
-2.6
nA
µ
A nA nA
V
V
V
V
V
V
V
I
C
= -0.1 mA V
CE
= -10 V
I
C
= -1 mA V
CE
= -10 V
I
C
= -10 mA V
CE
= -10 V
I
C
= -150 mA V
CE
= -10 V
I
C
= -500 mA V
CE
= -10 V
75
100
100
100
50
300 f
T
Transition Frequency V
CE
= -20 V f = 100 MHz
I
C
= -50 mA
I
C
= 0 V
EB
= -2 V f = 1MHz
200 MHz
C
EBO
Emitter-Base
Capacitance
30 pF
C
CBO t s
∗∗
Collector-Base
Capacitance
I
E
= 0 V
CB
= -10 V f = 1MHz t d
∗∗
Delay Time V
CC
= -30 V I
C
= -150 mA 10 ns t r
∗∗
Rise Time
I
I
B1
= -15 mA
V
CC
B1
= -30 V I
C
= -15 mA
= -150 mA 40 ns
Storage Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
8
80 pF ns t f
∗∗
Fall Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
30 ns t on
∗∗
Turn-on Time V
CC
= -30 V I
I
B1
= -15 mA
C
= -150 mA 45 ns t off
∗∗
Turn-off Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
* Pulsed: Pulse duration = 300
µ s, duty cycle
≤
1 %
= -15 mA
** See test circuit
100 ns
2/7
Normalized DC Current Gain.
2N2905A/2N2907A
Collector Emitter Saturation Voltage.
Collector Base and Emitter-base capacitances.
Switching Characteristics.
Obsolete Product(s) - Obsolete Product(s)
3/7
2N2905A/2N2907A
Test Circuit for t on
, t r
, t d
.
t
PULSE GENERATOR : r
≤
2.0 ms
Frequency = 150 Hz
Z o
=
50
Ω
TO OSCILLOSCOPE : t r
< 5.0 ns
Z
IN
> 10 M
Ω
Test Circuit for t off
, t o
, t f
.
Obsolete Product(s) - Obsolete Product(s)
PULSE GENERATOR : t r
≤
2.0 ns
Frequency = 150 Hz
Z o
=
50
Ω
TO OSCILLOSCOPE : t r
< 5.0 ns
Z
IN
> 100 M
Ω
4/7
DIM.
H
I
F
G
L
D
E
A
B
2N2905A/2N2907A
TO-18 MECHANICAL DATA
MIN.
mm
TYP.
MAX.
12.7
0.49
5.3
4.9
MIN.
5.8
2.54
45 o
0.100
1.2
1.16
45 o inch
TYP.
0.500
MAX.
0.019
0.208
0.193
0.228
0.047
0.045
D A
G
H
I
Obsolete Product(s) - Obsolete Product(s)
L
C
0016043
5/7
DIM.
H
I
F
G
L
D
E
A
B
2N2905A/2N2907A
MIN.
12.7
5.08
TO-39 MECHANICAL DATA
mm
TYP.
MAX.
MIN.
0.500
0.49
6.6
8.5
9.4
1.2
0.9
45 o
(typ.)
0.200
inch
TYP.
MAX.
0.019
0.260
0.334
0.370
0.047
0.035
D A
G
I
H
Obsolete Product(s) - Obsolete Product(s)
L
P008B
6/7
2N2905A/2N2907A
Obsolete Product(s) - Obsolete Product(s)
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