®
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
T stg
T j
Parameter
Max. Operating Junction Temperature
Value
175
Unit
V
CBO
V
CEO
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
75
40
V
V
EBO
Emitter-Base Voltage (I
C
= 0) 6
V
V
I
C
Collector Current 0.6
A
I
CM
P tot
Collector Peak Current (t p
< 5 ms)
Total Dissipation at T amb
≤
25 o
C
for 2N2219A
for 2N2222A
at T
C
≤
25 o
C
for 2N2219A
for 2N2222A
Storage Temperature
0.8
0.8
0.5
3
1.8
-65 to 175
A
W
W
W
W o
C o
C
1/7 February 2003
2N2219A / 2N2222A
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
TO-39
50
187.5
TO-18
83.3
300 o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Symbol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Conditions
V
CB
= 60 V
V
CB
= 60 V T j
= 150 o
C
Min.
Typ.
Max.
10
10
Unit nA
µ
A
I
I
CEX
BEX
Collector Cut-off
Current (V
BE
= -3V)
Base Cut-off Current
(V
BE
= -3V)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
V
CE
= 60 V
V
CE
= 60 V
V
EB
= 3 V
I
C
= 10
µ
A
I
C
= 10 mA
I
E
= 10
µ
A
75
40
6
10
20
10 nA nA nA
V
V
V h fe
∗
Small Signal Current
Gain
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 1 V
I
T
C
= 10 mA V amb
= -55 o
C
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V f = 1KHz
I
C
= 10 mA V
CE
= 10 V f = 1KHz
0.6
35
50
75
100
40
50
35
50
75
0.3
1
1.2
2
300
300
375
V
V
V
V f
T C
= 20 mA V Transition Frequency I f = 100 MHz
CE
= 20 V 300 MHz
Obsolete Product(s) - Obsolete Product(s)
C
EBO
Emitter-Base I 25 pF
C
= 0 V
EB
= 0.5 V f = 100KHz
Capacitance
8 pF C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 100 KHz
R e(h ie)
Real Part of Input I
C
= 20 mA V
Impedance f = 300MHz
* Pulsed: Pulse duration = 300
µ s, duty cycle
≤
1 %
CE
= 20 V 60
Ω
2/7
2N2219A / 2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions
NF h h ie re
Noise Figure
Input Impedance
I
C
= 0.1 mA V f = 1KHz R g
CE
= 10 V
= 1K
Ω
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
Reverse Voltage Ratio I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V h oe
Output Admittance I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V t d
∗∗
Delay Time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA V
BB
= -0.5 V t r
∗∗
Rise Time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA V
BB
= -0.5 V t s
∗∗
Storage Time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA t f
∗∗
Fall Time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA r bb’
C b’c
I
C
= 20 mA V
CE
= 20 V
Constant f = 31.8MHz
∗
Pulsed: Pulse duration = 300
µ s, duty cycle
≤
1 %
∗∗
See test circuit
Min.
2
0.25
5
25
Typ.
4
Max.
8
1.25
8
4
35
200
10
Unit dB k
Ω k
Ω
10
-4
10
-4
µ
S
µ
S ns
25
225
60
150 ns ps ns ns
Obsolete Product(s) - Obsolete Product(s)
3/7
2N2219A / 2N2222A
Test Circuit fot t d
, t r.
Test Circuit fot t d
, t r.
PULSE GENERATOR : t r
≤
20 ns
PW
≤
200 ns
Z
IN
= 50
Ω
TO OSCILLOSCOPE t r
≤
5.0 ns
Z
IN
< 100 K
Ω
C
IN
≤
12 pF
Obsolete Product(s) - Obsolete Product(s)
PULSE GENERATOR :
PW
≈
10
µ s
Z
IN
= 50
Ω
T
C
≤
5.0 ns
TO OSCILLOSCOPE : t r
< 5.0 ns
Z
IN
> 100 K
Ω
C
IN
≤
12 pF
4/7
DIM.
H
I
F
G
L
D
E
A
B
2N2219A / 2N2222A
TO-18 MECHANICAL DATA
MIN.
mm
TYP.
MAX.
12.7
0.49
5.3
4.9
MIN.
5.8
2.54
45 o
0.100
1.2
1.16
45 o inch
TYP.
0.500
MAX.
0.019
0.208
0.193
0.228
0.047
0.045
D A
G
H
I
Obsolete Product(s) - Obsolete Product(s)
L
C
0016043
5/7
DIM.
H
I
F
G
L
D
E
A
B
2N2219A / 2N2222A
MIN.
12.7
5.08
TO-39 MECHANICAL DATA
mm
TYP.
MAX.
MIN.
0.500
0.49
6.6
8.5
9.4
1.2
0.9
45 o
(typ.)
0.200
inch
TYP.
MAX.
0.019
0.260
0.334
0.370
0.047
0.035
D A
G
I
H
Obsolete Product(s) - Obsolete Product(s)
L
P008B
6/7
2N2219A / 2N2222A
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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