®
STTH1506DPI
Tandem 600V HYPERFAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
15 A
600 V
Tj (max)
V
F
(max)
I
RM
(typ.) t rr
(typ.)
150 °C
2.4 V
4.8 A
16 ns
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■
■
■
■
■
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
INSULATION (2500V
RMS
) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
PACKAGE CAPACITANCE: C=16pF
DESCRIPTION high dI
F
/dt.
1
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
RRM Repetitive peak reverse voltage
I
F(RMS) RMS forward current
I
FSM Surge non repetitive forward current
Ipeak
Peak current waveform
T stg Storage temperature range
Tj
Maximum operating junction temperature tp = 10 ms sinusoidal
δ
= 0.15 Tc = 120°C
2
DOP3I
(insulated)
1
The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at
Value
600
26
130
35
-65 +150
+ 150
2
Unit
V
A
A
A
°C
°C
October 2003 - Ed: 2A
1/5
STTH1506DPI
THERMAL AND POWER DATA
Symbol Parameter
R th (j-c) Junction to case
Test conditions Value
1.6
Unit
°
C/W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
I
R
*
Parameter Tests Conditions
Reverse leakage current
V
R
= V
RRM
Tj = 25°C
V
F
**
Forward voltage drop I
F
= 15 A
Tj = 125°C
Tj = 25
°
C
Tj = 150°C
Pulse test: * tp = 100ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.7 x I
F(AV)
+ 0.047 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
20 µA
30
1.95
200
3.6
2.4
V
RECOVERY CHARACTERISTICS
Symbol t rr
Parameter
Reverse recovery time I
I
F
R
Tests Conditions
= 0.5 A Irr = 0.25A
= 1 A
Tj = 25°C
I
RM Reverse recovery current
I
F
= 1 A dI
F
/dt = - 50A/µs
V
R
= 30 V
V
R
= 400 V I
F
= 15 A dI
F
/dt = -200 A/µs
Tj = 125°C
S
Q rr
Reverse recovery softness factor
Reverse recovery charges
Min.
Typ.
Max.
Unit
16 ns
4.8
0.4
80
35
6.0
A
nC
TURN-ON SWITCHING CHARACTERISTICS
Symbol t fr
Parameter
Forward recovery time
I
F
Tests Conditions
= 15 A dI
F
/dt = 100A/µs,
V
FR
= 1.1 x V
F max
V
FP Forward recovery voltage
I
F
= 15 A dI
F
/dt = 100 A/µs
Tj = 25°C
Tj = 25°C
Min.
Typ.
Max.
Unit
200 ns
6 V
2/5
STTH1506DPI
Fig. 1: Conduction losses versus average current.
55
50
45
40
35
30
25
20
15
10
5
0
0
P(W)
2
δ
= 0.05
4
δ
= 0.1
6 8
δ
= 0.2
I
F(AV)
10
(A)
12
δ
= 0.5
14
δ
= 1
T
δ
=tp/T
16 18 tp
20
Fig. 2: Forward voltage drop versus forward current.
50
40
30
20
10
0
130
120
110
100
90
80
70
60
I
FM
(A)
0 1
(maximum values)
(typical values)
2 3
(maximum values)
4
V
FM
(V)
5 6 7 8
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
1.0
Z th(j-c)
/R th(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
δ = 0.5
0.3
0.2
0.1
0.0
1.E-03
δ
= 0.2
δ
= 0.1
Single pulse
1.E-02
T
1.E-01
δ
=tp/T tp
1.E+00
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(typical values).
20
I
RM
(A)
18
16
14
12
10
8
6
4
2
0
0 200
I =0.25 x I
F(AV)
I =0.5 x I
F(AV)
400
I =I F(AV)
600
I =2 x I
F(AV)
800 1000
Fig. 5: Reverse recovery time versus dI
F
/dt
(typical values).
Fig. 6: Reverse recovery charges versus dI
F/ dt
(typical values).
70
60
50
20
10
40
30
0
0 200
I =2 x I
F(AV)
I =I
F(AV) I =0.5 x I F(AV)
400 600 800 1000
240
220
200
180
160
140
120
100
80
60
40
20
0
0 200 400 600 800
I =2 x I
F(AV)
I =I
F(AV)
I =0.5 x I
F(AV)
1000
3/5
STTH1506DPI
Fig. 7: Softness factor versus dI
F
/dt (typical values).
0.80
S
I =I
F(AV)
0.70
0.60
0.50
0.40
0.30
0.20
0 200 400 600 800 1000
Fig. 8: Relative variations of dynamic parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25 50
S
I
RM
75 100
F(AV)
125
Fig. 9: Transient peak forward voltage versus dI
F
/dt (typical values).
7
6
5
4
3
2
1
0
10
9
8
12
V
FP
(V)
I =I
F(AV) 11
0 50 100 150 200 250 300 350 400 450 500
Fig. 10: Forward recovery time versus dI
F
/dt
(typical values).
350
300
250
200
150
100
50
0
0 100 200 300
I =I
F(AV)
V FR =1.1 x V max.
400 500
Fig. 11: Junction capacitance versus reverse voltage applied (typical values).
1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
100
10
1
4/5
10 100 1000
PACKAGE MECHANICAL DATA
DOP3I
STTH1506DPI
G
H
E
F
C
D
A
B
N
P
R
K
L
REF.
DIMENSIONS
Millimeters Inches
Min.
4.4
Max.
4.6
Min.
0.173
Max.
0.181
1.45
1.55
0.057
0.061
14.35
15.60
0.565
0.614
0.5
2.7
0.7
2.9
0.020
0.106
0.028
0.114
15.8
20.4
15.1
3.4
16.5
21.1
15.5
3.65
4.08
10.8
1.20
4.17
11.3
1.40
4.60 typ.
0.622
0.815
0.594
0.134
0.161
0.650
0.831
0.610
0.144
0.164
0.425
0.444
0.047
0.055
0.181 typ.
Ordering code Marking
STTH1506DPI STTH1506DPI
■
Epoxy meets UL94,V0
Package
DOP3I
Weight
4.46 g.
Base qty
30
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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