®
STTH1506TPI
Tandem 600V Hyperfast Rectifer
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
15 A
600 V (in series)
Tj (max)
V
F
(max)
I
RM
(typ.)
150 °C
2.6 V
4.8 A
1 2 3
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FEATURES AND BENEFITS
Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions.
Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices.
Allows downsizing of mosfet and heatsinks.
Internal ceramic insulated devices with equal thermal conditions for both 300V diodes.
Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.
Matched diodes for typical PFC application without need for voltage balance network.
C = 7pF
1
2
3
TOP3I
(insulated)
DESCRIPTION
The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI
F
/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
I
F(RMS) RMS forward current
I
FSM Surge non repetitive forward current
T stg Storage temperature range
Tj
Maximum operating junction temperature tp = 10 ms sinusoidal
Value
600
26
130
-65 +150
+ 150
Unit
V
A
A
°C
°C
TM: TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 1A
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STTH1506TPI
THERMAL AND POWER DATA
Symbol Parameter
R th (j-c) Junction to case
R th (c)
R th (j-c) Junction to case
P
1 Conduction power dissipation for both diodes
Test conditions
Per diode
Coupling
Total
I
F(AV)
= 15 A
δ
= 0.5
Tc = 70°C
Value
2.9
0.3
1.6
50
Unit
°
C/W
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
I
R
*
Parameter Tests Conditions
Reverse leakage current
V
R
= V
RRM
Tj = 25°C
V
F
**
Forward voltage drop I
F
= 15 A
Tj = 125°C
Tj = 25
°
C
Tj = 125°C
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.8 x I
F(AV)
+ 0.053 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
20
µ
A
30 200
2.1
3.6
2.6
V
RECOVERY CHARACTERISTICS
Symbol Parameter trr
Reverse recovery time
Tests Conditions
I
F
= 0.5 A Irr = 0.25A
I
R
= 1 A
I
F
= 1 A dI
F
/dt = - 50A/
µ s
V
R
= 30 V
Tj = 25°C
I
RM
S factor
Reverse recovery current
V dI
R
F
= 400 V I
F
/dt = -200 A/
= 15 A
µ s
Tj = 125°C
Min.
Typ.
Max.
Unit
16 ns
4.8
0.4
35
6.0
A
-
TURN-ON SWITCHING CHARACTERISTICS
Symbol
V tfr
FP
Parameter
Forward recovery time
Forward recovery voltage
Tests Conditions
I
F
= 15 A dI
F
/dt = 100A/
µ s,
V
FR
= 1.1 x V
F max
Tj = 25°C
I
F
= 15 A dI
F
/dt = 100 A/
µ s Tj = 25°C
Min.
Typ.
Max.
Unit
200 ns
6 V
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STTH1506TPI
Fig. 1: Conduction losses versus average current.
55
P(W)
50
45
40
35
30
25
20
15
10
5
0
0 2
δ
= 0.05
4
δ
= 0.1
δ
= 0.2
6 8
IF(AV)(A)
10 12
δ
= 0.5
14
δ
= 1
T
δ
=tp/T
16 18 tp
20
Fig. 2: Forward voltage drop versus forward current.
50
40
30
20
10
0
130
120
110
100
90
80
70
60
IFM(A)
0 1
T j j =125°C
(Maximum values)
(Typical values)
2 3 4
VFM(V)
5
(Maximum values)
6 7 8
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
1.0
Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.6
δ
= 0.5
0.5
0.4
δ
= 0.2
δ
= 0.1
0.3
0.2
0.1
0.0
1.E-03
Single pulse
1.E-02 tp(s)
1.E-01
δ
=tp/T
T tp
1.E+00
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
22
IRM(A)
10
8
6
4
2
0
0
20
18
16
14
12
I =0.25 x I
F(AV)
200
I =0.5 x I F(AV)
400
I =I
F(AV) dIF/dt(A/µs)
600
I =2 x I
F(AV)
800 1000
Fig. 5: Reverse recovery time versus dI
F
/dt (90% confidence).
100 trr(ns)
50
40
30
20
10
0
0
90
80
70
60
F(AV)
200
I =2 x I
F(AV)
400
I =0.5 x I F(AV) dIF/dt(A/µs)
600 800 1000
Fig. 6: Reverse recovery charges versus dI
F/ dt
(90% confidence).
350
Qrr(nC)
300
250
200
150
100
50
0
0 200
I =2 x I
F(AV)
I =I F(AV)
400 dIF/dt(A/µs)
600
I =0.5 x I F(AV)
800 1000
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STTH1506TPI
Fig. 7: Softness factor versus dI
F
/dt (typical values).
0.80
S factor
I =I F(AV)
0.70
0.60
0.50
0.40
0.30
0.20
0 200 dIF/dt(A/µs)
400 600 800 1000
Fig. 8: Relative variations of dynamic parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25 50
S factor
I RM
Tj(°C)
75 100
I =I
F(AV)
125
Fig. 9: Transient peak forward voltage versus dI
F
/dt (90% confidence).
16
VFP(V)
I =I F(AV)
14
12
10
8
6
4
2
0
0 50 100 dIF/dt(A/µs)
150 200 250 300 350 400 450 500
Fig. 10: Forward recovery time versus dI
F
/dt (90% confidence).
400 tfr(ns)
350
300
250
200
150
100
50
0
0 100 dIF/dt(A/µs)
200 300 400
F(AV)
500
Fig. 11: Junction capacitance versus reverse voltage applied (typical values).
1000
C(pF)
F=1MHz
V
OSC
=30mV
100
10
VR(V)
100 1000
10
1
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PACKAGE MECHANICAL DATA
TOP3I
STTH1506TPI
REF.
DIMENSIONS
Millimeters Inches
A
Min.
Typ. Max. Min.
Typ. Max.
4.4
B 1.45
4.6
0.173
1.55 0.057
0.181
0.061
C 14.35
D 0.5
E 2.7
F 15.8
15.60 0.565
0.7
2.9
0.020
0.106
16.5 0.622
0.614
0.028
0.114
0.650
G 20.4
H 15.1
J
K
5.4
3.4
L 4.08
P 1.20
R 4.60
21.1 0.815
15.5 0.594
5.65 0.213
3.65 0.134
4.17 0.161
1.40 0.047
0.181
0.831
0.610
0.222
0.144
0.164
0.055
Ordering code Marking
STTH1506TPI STTH1506TPI
■
Epoxy meets UL94,V0
Package
TOP3I
Weight
4.46 g.
Base qty
30
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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