STMicroelectronics STEVAL-IPMNM1N User Manual
STMicroelectronics STEVAL-IPMNM1N is a compact motor drive power board based on SLLIMM-nanoTM (small low-loss intelligent molded module) MOSFET-based (STIPN1M50T-H). It provides an affordable and easy-to-use solution for driving high power motors for a wide range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor drives in general. The IPM itself consists of short-circuit rugged MOSFETs and a wide range of features like undervoltage lockout, smart shutdown, embedded temperature sensor and NTC, and overcurrent protection.
تبلیغات
تبلیغات
UM2282
User manual
STEVAL-IPMnM1N motor control power board based on the STIPN1M50T-H
SLLIMM-nano™MOSFET
Introduction
The STEVAL-IPMnM1N is a compact motor drive power board based on SLLIMM-nano™ (small low-loss intelligent molded module) MOSFET-based (STIPN1M50T-H).
. It provides an affordable and easy-to-use solution for driving high power motors for a wide range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor drives in general. The IPM itself consists of short-circuit rugged MOSFETs and a wide range of features like undervoltage lockout, smart shutdown, embedded temperature sensor and NTC, and overcurrent protection.
The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It consists of an interface circuit (BUS and V
CC
connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event and temperature monitoring. In order to increase the flexibility, it is designed to work in single- or three-shunt configuration and with triple current sensing options: three dedicated onboard op-amps, an internal IPM op-amp and op-amps embedded in the MCU.
The Hall/Encoder section completes the circuit.
With these advanced characteristics, the system is designed to achieve fast and accurate current feedback conditioning, satisfying the typical requirements for field-oriented control (FOC).
The is compatible with ST's STM32-based control board, enabling designers to build a complete platform for motor control.
Figure 1. Motor control board (top view) based on SLLIMM-nano™ MOSFET
UM2282 - Rev 2 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
UM2282
Key features
Key features
•
•
•
•
•
•
•
•
•
•
•
•
•
Input voltage: 125 - 400 V
DC
Nominal power: up to 60 W
Nominal current: up to 0.6 A rms
Input auxiliary voltage: up to 20 V
DC
Motor control connector (32 pins) interfacing with ST MCU boards
Single- or three-shunt resistors for current sensing (with sensing network)
Three options for current sensing: external dedicated op-amps, internal SLLIMM-nano op-amp (single) or through MCU
Overcurrent hardware protection
IPM temperature monitoring and protection
Hall sensors (3.3 / 5 V)/encoder inputs (3.3 / 5 V)
MOSFET intelligent power module:
– SLLIMM-nano™ IPM MOSFET-based (STIPN1M50T-H - Full molded package package)
Universal design for further evaluation with bread board and testing pins
Very compact size
Figure 2. Motor control board (bottom view) based on SLLIMM-nano™ MOSFET
UM2282 - Rev 2 page 2/31
2
UM2282
Circuit schematics
Circuit schematics
The full schematics for the SLLIMM-nano™ MOSFET card for STIPN1M50T-H IPM products is shown below. This card consists of an interface circuit (BUS and V
CC
connectors), bootstrap capacitors, snubber capacitor, shortcircuit protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It also includes bypass capacitors for V
CC
and bootstrap capacitors. The capacitors are located very close to the drive IC to avoid malfunction due to noise.
Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the embedded MCU op-amps; selection is performed through three jumpers.
The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.
UM2282 - Rev 2 page 3/31
2.1
Schematic diagrams
Figure 3. STEVAL-IPMnM1N circuit schematic (1 of 5)
UM2282
Schematic diagrams
4 11
R6 1k
UM2282 - Rev 2
1 2 page 4/31
Figure 4. STEVAL-IPMnM1N circuit schematic (2 of 5)
UM2282
Schematic diagrams
UM2282 - Rev 2
18 20 22 24
17 19 21 23 25
PWM-A-H PWM-A-L PWM-B-H PWM-B-L PWM-C-H PWM-C-L
M_phase_A M_phase_B
3 1 3 1 3 1 page 5/31
Figure 5. STEVAL-IPMnM1N circuit schematic (3 of 5)
UM2282
Schematic diagrams
UM2282 - Rev 2 page 6/31
UM2282 - Rev 2
Figure 6. STEVAL-IPMnM1N circuit schematic (4 of 5)
UM2282
Schematic diagrams
4 11
1 3
+
4 11 4 11 page 7/31
Figure 7. STEVAL-IPMnM1N circuit schematic (5 of 5)
UM2282
Schematic diagrams
UM2282 - Rev 2
3 1 3 1 page 8/31
3
UM2282
Main characteristics
Main characteristics
The board is designed for a 125 V
DC
to 400 V
DC
supply voltage.
An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on the board.
The SLLIMM-nano integrates six MOSFET switches with freewheeling diodes and high voltage gate drivers.
Thanks to this integrated module, the system offers power inversion in a simple and compact design that requires less PCB area and increases reliability.
The board offers the added flexibility of being able to operate in single- or three-shunt configuration by modifying solder bridge jumper settings (see
Section 4.3.4 Single- or three-shunt selection
).
Figure 8. STEVAL-IPMnM1N architecture
UM2282 - Rev 2 page 9/31
UM2282
Filters and key parameters
4
Filters and key parameters
4.1
4.2
Note:
Input signals
The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down resistor is built-in for each input signal. To prevent input signal oscillation, an RC filter is added on each input as close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).
Bootstrap capacitor
In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (V
DC-
) as common reference ground, which allows all low side gate drivers to share the same power supply, while the emitter of the high side MOSFETs is alternately connected to the positive (V
DC+
) and negative (V
DC-
) DC bus during running conditions.
A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode. The SLLIMM-nano MOSFET -based family includes a patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode with series resistor. An internal charge pump provides the DMOS driving voltage.
The value of the C
BOOT
capacitor should be calculated according to the application requirements.
graph selection shows the behavior of C
BOOT
(calculated) versus switching frequency (f sw
), with different values of ∆V
CBOOT
for a continuous sinusoidal modulation and a duty cycle δ = 50%.
This curve is taken from application note AN4840 (available on www.st.com); calculations are based on the
STGIP5C60T-Hyy device, which represents the worst case scenario for this kind of calculation.
The boot capacitor must be two or three times larger than the C
BOOT
calculated in the graph.
For this design, a value of 2.2 µF was selected.
Figure 9. C
BOOT
graph selection
UM2282 - Rev 2 page 10/31
UM2282
Overcurrent protection
4.3
4.3.1
4.3.2
Overcurrent protection
The SLLIMM-nano MOSFET -based integrates a comparator for fault sensing purposes. The comparator has an internal voltage reference V
REF
(540 mV typ.) connected to the inverting input, while the non-inverting input on the
CIN pin can be connected to an external shunt resistor to implement the overcurrent protection function. When the comparator triggers, the device enters the shutdown state.
The comparator output is connected to the SD pin in order to send the fault message to the MCU.
SD pin
The SD is an input/output pin (open drain type if used as output) used for enable and fault; it is shared with NTC thermistor, internally connected to GND.
The pull-up resistor (R10) causes the voltage V
SD
-GND to decrease as the temperature increases. To maintain the voltage above the high-level logic threshold, the pull-up resistor is sized at 1 kΩ (3.3 V MCU power supply).
The filter on SD (R10 and C18) must be sized to obtain the desired re-starting time after a fault event and placed as close as possible to the pin.
A shutdown event can be managed by the MCU; in which case, the SD functions as the input pin.
Conversely, the SD functions as an output pin when an overcurrent or undervoltage condition is detected.
Shunt resistor selection
•
•
The value of the shunt resistor is calculated by the following equation:
RSH =
Vref
IOC
Where V ref
is the internal comparator (CIN) (0.54 V typ.) and I
OC
is the overcurrent threshold detection level.
(1)
The maximum OC protection level should be set to less than the pulsed collector current in the datasheet. In this design, the overcurrent threshold level is fixed at I
OC
= 1.3 A in order to select a commercial shunt resistor value.
RSH =
Vref ⋅
R15 + R11
R11
IOC
+ VF
=
4700
1.3
+ 0.18
= 0.642 Ω (2)
Where V
F
is the voltage drop across diodes D3, D4 and D5.
For the power rating of the shunt resistor, the following parameters must be considered:
• Maximum load current of inverter (85% of I nom [Arms]
): I load(max)
•
Shunt resistor value at TC = 25 °C
Power derating ratio of shunt resistor at T
SH
=100 °C
Safety margin
The power rating is calculated by the following equation:
•
•
PSH =
1
2 ⋅
Iload max ⋅ RSH ⋅ margin
Derating gratio
The commercial value chosen was 0.66 Ω to which corresponds an overcurrent level of 1.3 A.
The power rating is:
• Inom = 1A Inom rms =
Inom
2
Iload max = 85 % Inom rms
= 0.6 Arms
Power derating ratio of shunt resistor at TSH = 100 °C: 80% (from datasheetmanufacturer)
Safety margin: 30%
(3)
(4)
PSH =
1
2 ⋅
0.6² ⋅ 0.66 ⋅ 1.3
0.8
= 0.19 W
Considering the commercial value, a 1 W shunt resistor was selected.
Based on the previous equations and conditions, the minimum shunt resistance and power rating is summarized below.
(5)
UM2282 - Rev 2 page 11/31
UM2282
Overcurrent protection
4.3.3
4.3.4
Table 1. Shunt selection
Device
STIPN1M50T-H
I nom(peak)
[A]
1
OCP
(peak)
[A]
1.3
I load(max)
[Arms]
0.6
R
SHUNT
[Ω]
0.68
Minimum shunt power rating P
SH
[W]
0.19
CIN RC filter
An RC filter network on the CIN pin is required to prevent short-circuits due to the noise on the shunt resistor. In this design, the R15-C8 RC filter has a constant time of about 1 µs.
Single- or three-shunt selection
Single- or three-shunt resistor circuits can be adopted by setting the solder bridges SW5, SW6, SW7 and SW8.
The figures below illustrate how to set up the two configurations.
Figure 10. One-shunt configuration
Figure 11. Three-shunt configuration
Further details regarding sensing configuration are provided in the next section.
UM2282 - Rev 2 page 12/31
5
UM2282
Current sensing amplifying network
Current sensing amplifying network
The STEVAL-IPMnM1N motor control evaluation board can be configured to run in three-shunt or single-shunt configurations for field oriented control (FOC).
The current can be sensed thanks to the shunt resistor and amplified by using the on-board operational amplifiers or by the MCU (if equipped with op-amp).
Once the shunt configuration is chosen by setting solder bridge on SW5, SW6, SW7 and SW8 (as described in
amplified or not amplified.
Single-shunt configuration requires a single op amp so the only voltage sent to the MCU to control the sensing is connected to phase V through SW2.
Switch SW17 is used to send amplified signal coming from the internal IPM op-amp or from an external one.
SW1, SW2, SW3 and SW17 can be configured to select which signals are sent to the microcontroller, as per the following table.
Configuration
Single Shunt
Three Shunt
Table 2. Op-amp sensing configuration
Sensing
IPM op-amp
On board op-amp
MCU op-amp
On board op-amp
MCU op-amp
Bridge (SW1) open open open
1-2
2-3
Bridge (SW2)
1-2
1-2
2-3
1-2
2-3
Bridge (SW3) open open open
1-2
2-3
Bridge (SW17)
2-3
1-2
1-2
1-2
1-2
The operational amplifier TSV994 used on the amplifying networks has a 20 MHz gain bandwidth from a single positive supply of 3.3 V.
The amplification network must allow bidirectional current sensing, so an output offset V
O zero current.
= +1.65 V represents
For the STIPN1M50T-H (I
OCP
= 1.3 A; R
SHUNT
= 0.68 Ω), the maximum measurable phase current, considering that the output swings from +1.65 V to +3.3 V (MCU supply voltage) for positive currents and from +1.65 V to 0 for negative currents is:
= 1.3A
(6) rm =
ΔV
MaxMeasCurrent =
1.65
1.3 = 1.27Ω
The overall trans-resistance of the two-port network is:
(7) rm = RSHUNT ⋅ AMP = 0.66 ⋅ AMP = 1.27Ω
AMP = rm
RSHUNT
Finally choosing R a
=R b
and R c
=R d
, the differential gain of the circuit is:
(8)
(9)
AMP =
Rc
Ra
= 1.9
(10)
An amplification gain of 1.9 was chosen. The same amplification is obtained for all the other devices, taking into account the OCP current and the shunt resistance, as described in Table 1.
The RC filter for output amplification is designed to have a time constant that matches noise parameters in the range of 1.5 µs:
4 ⋅ τ = 4 ⋅ Re ⋅ Cc = 1.5 µs (11)
UM2282 - Rev 2 page 13/31
Phase
Phase U
Phase V
Phase W
UM2282
Current sensing amplifying network
Ra
R21
R26
R30
Cc =
1.5 µs
4 ⋅ 1000 = 375 pF 330 pFselected
Table 3. Amplifying networks
Rb
R23
R27
R32
Amplifying network
Rc
R20
R25
R28
Rd
R24
R29
R33
Re
R22
R43
R31
RC filter
Cc
C25
C29
C31
(12)
UM2282 - Rev 2 page 14/31
6
6.1
UM2282
Temperature monitoring
Temperature monitoring
The SLLIMM-nano MOSFET family integrates an NTC thermistor placed close to the power stage. The board is designed to use it in sharing with the SD pin. Monitoring can be enabled and disabled via the SW4 switch.
NTC Thermistor
The built-in thermistor (85 kΩ at 25 °C) is inside the IPM and connected on SD /OD pin2 (shared with the SD function).
Given the NTC characteristic and the sharing with the SD function, the network is designed to keep the voltage on this pin higher than the minimum voltage required for the pull up voltage on this pin over the whole temperature range.
Considering V bias
= 3.3 V, a pull up resistor of 1 kΩ (R10) was used.
The figure below shows the typical voltage on this pin as a function of device temperature.
Figure 12. NTC voltage vs temperature
4.0
3.5
3.0
R
SD
From/to mC
V
Bias
SD/OD
C
SD NTC
M1
Smart shut down
SLLIMM
2.5
2.0
V
SD_thH
V
MCU_thH
1.5
1.0
0.5
V
SD_thL
V
MCU_thL
0.0
25 50 75
Temperature [°C]
Rsd=1.0kohm
Isd (SD ON)=2.8mA
100 125
Vdd=3.3V
UM2282 - Rev 2 page 15/31
7
UM2282
Firmware configuration for STM32 PMSM FOC SDK
Firmware configuration for STM32 PMSM FOC SDK
The following table summarizes the parameters which customize the latest version of the ST FW motor control library for permanent magnet synchronous motors (PMSM): STM32 PMSM FOC SDK for this STEVAL-IPMnM1N.
Block
Table 4. ST motor control workbench GUI parameters - STEVAL-IPMnM1N
Parameter
Comparator threshold
Over current protection
Overcurrent network offset
Bus voltage sensing
Overcurrent network gain
Bus voltage divider
Rated bus voltage info
Current sensing
Command stage
Min rated voltage
Max rated voltage
Nominal voltage
Current reading typology
Shunt resistor value
Amplifying network gain
Phase U Driver
Phase V Driver
Phase W Driver
Value
Vref ∙
R15 + R11
R11
+ VF = 0.83 V
0
0.1 V/A
1/125
125 V
400 V
325 V
Single- or three-shunt
0.68 Ω
1.9
HS and LS: Active high
HS and LS: Active high
HS and LS: Active high
(13)
UM2282 - Rev 2 page 16/31
8
UM2282 - Rev 2
UM2282
Connectors, jumpers and test pins
Connectors, jumpers and test pins
Connector
J1
J2
J3
J4
J5
•
•
•
•
•
•
•
1.
2.
3.
4.
5.
Table 5. Connectors
Description / pinout
Supply connector (DC – 125 V to 400 V)
1-L - phase
2 N - neutral
1 - emergency stop
3 - PWM-1H
5 - PWM-1L
7 - PWM-2H
9 - PWM-2L
11 - PWM-3H
13 - PWM-3L
15 - current phase A
17 - current phase B
19 - current phase C
21 - NTC bypass relay
23 - dissipative brake PWM
25 - +V power
27- PFC sync.
29 - PWM VREF
31 - measure phase A
33 - measure phase B
Motor control connector
2 - GND
4 - GND
6 - GND
8 - GND
10 - GND
12 - GND
14 - HV bus voltage
16 - GND
18 - GND
20 - GND
22 - GND
24 - GND
26 - heat sink temperature
28 - VDD_m
30 - GND
32 - GND
34 - measure phase C
Motor connector phase A phase B phase C
V
CC
supply (20 V
DC
max) positive negative
Hall sensors / encoder input connector
Hall sensors input 1 / encoder A+
Hall sensors input 2 / encoder B+
Hall sensors input 3 / encoder Z+
3.3 or 5 Vdc
GND
Jumper
SW1
Table 6. Jumpers
Description
To choose current U to send to control board:
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor output page 17/31
UM2282 - Rev 2
TP6
TP7
TP8
TP9
TP10
TP11
TP12
Test Pin
TP1
TP2
TP3
TP4
TP5
TP13
TP14
TP15
TP16
TP17
Jumper
SW2
SW3
SW4
SW5, SW6 SW7, SW8
SW9, SW16
SW10, SW13
SW11, SW14
SW12, SW15
SW17
UM2282
Connectors, jumpers and test pins
Description
To choose current V to send to control board
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor output
To choose current W to send to control board:
Jumper on 1-2: from amplification
Jumper on 2-3: directly from motor output
To send or not temperature information, coming from NTC, to micro
To choose one shunt or 3 shunt configuration. (Through solder bridge)
SW5, SW6 close SW7, SW8 open
SW5, SW6 open SW7, SW8 close one shunt three shunt
To choose input power for Hall/Encoder
Jumper on 1-2: 5 V
Jumper on 2-3: 3.3 V
To modify phase A hall sensor network
To modify phase B hall sensor network
To modify phase C hall sensor network
To choose on board or IPM op-amp in one shunt configuration
Jumper on 1-2: on board op-amp
Jumper on 2-3: IPM op-amp
Table 7. Test pins
Description
OUTW
HINW (high side W control signal input)
VccW
SD (shutdown pin)/NTC
LINW (high side W control signal input)
OP+
OPOUT
OP-
VbootW
OUTV
NV
HINV (high side V control signal input)
VbootV
LINV (high side V control signal input)
CIN
NU
NW page 18/31
Test Pin
TP18
TP19
TP20
TP21
TP22
TP23
TP24
TP25
TP26
TP27
UM2282
Connectors, jumpers and test pins
Description
OUTU
VbootU
LINU (high side U control signal input)
Ground
Ground
HinU (high side U control signal input)
Current_A_amp
Current_B_amp
Current_C_amp
Ground
UM2282 - Rev 2 page 19/31
9
UM2282
Bill of materials
Bill of material
Table 8. Bill of materials
Item Qty
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0
4
2
3
1
1
9
1
1
1
3
3
5
5
1
4
1
1
1
1
Reference
C1
C2, C22, C26, C28
C3, C4
C5, C6, C7
C8
C12
C10, C11, C14, C15, C16,
C19, C35, C36, C37
C17
C18
C21
C24, C27, C30
C25, C29, C31
C13, C23, C32, C33, C34
D1, D3, D4, D5, D10
D2
D6, D7, D8, D9
J1
J2
J3
J4
Part/Value
330 µF 400 V
±10%
10 nF 50 V
±10%
47 µF 50 V
±20%
2.2 µF 25 V
±10%
1 nF 50 V ±10%
10 µF 50 V
±20%
10 pF 100 V
±10%
0.1 µF 630 V
±10%
3.3 nF 50 V
±10%
4.7 µF 50 V
±20%
100 pF 100 V
±10%
330 pF 50 V
±10%
100 nF 50 V
±10%
Diode BAT48J
LED
20 V±5%
7.62 mm - 2 P
300 V
34 P
7,62 mm - 3 P
400 V
5 mm - 2 P 50 V
Ceramic multilayer capacitors
Ceramic multilayer capacitor
Ceramic multilayer capacitor
Electrolytic capacitor
Ceramic multilayer capacitors
Ceramic multilayer capacitors
Ceramic multilayer capacitors
-
Red LED
Description
Electrolytic capacitor - DNM
Ceramic multilayer capacitors
Electrolytic capacitor
Ceramic multilayer capacitors
Ceramic multilayer capacitors
Electrolytic capacitor
ZENER diode
Connector
Connector
Connector
Connector
Manufacturer
EPCOS
AVX any
Murata
Kemet
AVX
AVX
Murata
Kemet any
Kemet
AVX
AVX
ST
Ledtech
Fairchild
Semiconductor
TE Connectivity
AMP
Connectors
RS
TE Connectivity
AMP
Connectors
Phoenix Contact
Order code
B43501A9337M000
12065C103KAT2A any
GCM31MR71E225KA57L
C1206C102K5RACTU
12061A100JAT2A
12061A100JAT2A
GRM43DR72J104KW01L
C1206C332K5RACTU any
C1206C101J1GACTU
12065A331JAT2A
12065C104KAZ2A
BAT48J
L4RR3000G1EP4
MMSZ5250B
282845-2
625-7347
282845-3
1729128
UM2282 - Rev 2 page 20/31
UM2282 - Rev 2
UM2282
Bill of materials
Item Qty
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
1
2
1
1
19
1
3
6
3
7
3
0
2
2
6
7
26
1
10
1
1
Reference
J5
R1, R2
R3
R4
Part/Value
2.54 mm - 5 P
63 V
470 kΩ 400 V
±1%
120 Ω 400 V
±1%
7.5 kΩ 400 V
±1%
Description
Connector
Metal film SMD resistor
Metal film SMD resistor
Metal film SMD resistor
R5, R6, R7, R8, R9, R10,
R13, R14, R15, R19, R21,
R22, R23, R26, R27, R30,
R31, R32, R43
RC2, RC3, RC4,RC5,
RC6, RC7, RC9, RC10,
RC11, RC12, RC13
SW7, SW8
SW5, SW6
SW1, SW2, SW3, SW9,
SW16, SW17
SW4, SW10, SW11,
SW12, SW13, SW14,
SW15
TP1, TP2, TP3, TP4, TP5,
TP6, TP7, TP8, TP9,
TP10, TP11, TP12, TP13,
TP14, TP15, TP16, TP17,
TP18, TP19, TP20, TP22,
TP23, TP24, TP25, TP26,
TP27
1 kΩ 25 V ±1%
R12
R16, R17, R18
R20, R24, R25 ,R28, R29,
R33
R37, R38, R39
1.9 kΩ, 25 V
±1%
R11, R34, R35 ,R36, R40,
R41, R42
4.7 kΩ 25 V ±1%
RC1, RC8, RC14
5.6 kΩ 25 V ±1%
0.68 Ω ±1%
2.4 kΩ 25 V ±1%
0 Ω
Metal film SMD resistor
Metal film SMD resistor
Metal film SMD resistor
Metal film SMD resistor
Metal film SMD resistor
Metal film SMD resistor
DNM
Solder Bridge open
Jumper 2.54
Jumper 2.54
PCB terminal 1 mm
Metal film SMD resistor
-
-
PTH 3 pin
PTH 2 pin
PTH 1 pin
TP21 to close SWxy
U1
U2
PCB terminal
12.7 mm
Jumper TE
Connectivity female straight,
Black, 2-way,
2.54 mm
TSV994IDT
STIPN1M50T-H
-
-
PTH 26 pin
Manufacturer
RS any any
Panasonic any any
Panasonic any any any any
-
-
RS
RS
KEYSTONE
HARWIN
RS
ST
ST
Order code
W81136T3825RC any any
ERJP08F7501V any any
ERJ1TRQFR68U any any any any
-
-
W81136T3825RC
W81136T3825RC
5001
D3083B-46
881545-2
TSV994IDT
STIPN1M50T-H page 21/31
UM2282
PCB design guide
10
10.1
PCB design guide
Optimization of PCB layout for high voltage, high current and high switching frequency applications is a critical point. PCB layout is a complex matter as it includes several aspects, such as length and width of track and circuit areas, but also the proper routing of the traces and the optimized reciprocal arrangement of the various system elements in the PCB area.
A good layout can help the application to properly function and achieve expected performance. On the other hand, a PCB without a careful layout can generate EMI issues, provide overvoltage spikes due to parasitic inductance along the PCB traces and produce higher power loss and even malfunction in the control and sensing stages.
In general, these conditions were applied during the design of the board:
• PCB traces designed as short as possible and the area of the circuit (power or signal) minimized to avoid the sensitivity of such structures to surrounding noise.
•
•
•
Good distance between switching lines with high voltage transitions and the signal line sensitive to electrical noise.
The shunt resistors were placed as close as possible to the low side pins of the SLLIMM. To decrease the parasitic inductance, a low inductance type resistor (SMD) was used.
RC filters were placed as close as possible to the SLLIMM pins in order to increase their efficiency.
Layout of reference board
All the components are inserted on the top of the board. Only the IPM module is inserted on the bottom to allow the insertion of a suitable heatsink for the application.
Figure 13. Silk screen and etch - top side
UM2282 - Rev 2 page 22/31
Figure 14. Silk screen and etch - bottom side
UM2282
Layout of reference board
UM2282 - Rev 2 page 23/31
11
UM2282
Recommendations and suggestions
Recommendations and suggestions
•
•
•
The BOM list is not provided with a bulk capacitor already inserted in the PCB. However, the necessary space has been included (C1). In order to obtain a stable bus supply voltage, it is advisable to use an adequate bulk capacity. For general motor control applications, an electrolytic capacitor of at least 100 µF is suggested.
Similarly, the PCB does not come with a heat sink. You can place one above the IPM on the back side of the
PCB with thermal conductive foil and screws. R
TH
is an important factor for good thermal performance and depends on certain factors such as current phase, switching frequency, power factor and ambient temperature.
The board requires +5 V and +3.3 V to be supplied externally through the 34-pin motor control connector J2.
Please refer to the relevant board manuals for information on key connections and supplies.
UM2282 - Rev 2 page 24/31
UM2282
General safety instructions
12
General safety instructions
Danger:
The evaluation board works with high voltage which could be deadly for the users. Furthermore all circuits on the board are not isolated from the line input. Due to the high power density, the components on the board as well as the heat sink can be heated to a very high temperature, which can cause a burning risk when touched directly. This board is intended for use by experienced power electronics professionals who understand the precautions that must be taken to ensure that no danger or risk may occur while operating this board.
Caution:
After the operation of the evaluation board, the bulk capacitor C1 (if used) may still store a high energy for several minutes. So it must be first discharged before any direct touching of the board.
Important:
To protect the bulk capacitor C1, we strongly recommended using an external brake chopper after C1 (to discharge the high brake current back from the induction motor).
UM2282 - Rev 2 page 25/31
13
References
Freely available on www.st.com:
1.
STIPN1M50T-H datasheet
2.
TSV994 datasheet
3.
BAT48 datasheet
4.
MMSZ5250B datasheet
5.
UM1052 STM32F PMSM single/dual FOC SDK v4.3
6.
AN4043 SLLIMM™-nano small low-loss intelligent molded module
UM2282
References
UM2282 - Rev 2 page 26/31
Revision history
Date
12-Sep-2017
24-May-2018
Table 9. Document revision history
Version
1
2
Initial release.
Updated title.
Changes
UM2282
UM2282 - Rev 2 page 27/31
UM2282
Contents
Contents
UM2282 - Rev 2 page 28/31
UM2282
List of tables
List of tables
UM2282 - Rev 2 page 29/31
UM2282
List of figures
List of figures
UM2282 - Rev 2 page 30/31
UM2282
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
UM2282 - Rev 2 page 31/31
دانلود
پیوند عمومی به روز شد
پیوند عمومی به چت شما به روز شده است. You may view and manage your chat links after registration here.
پیوند عمومی سند
تبلیغات