supply pin during ADC conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

Figure 30.

12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

Figure 31.

LQFP64 outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Figure 32.

Figure 33.

LQFP64 top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

Figure 34.

LQFP100 outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

Figure 35.

Figure 36.

LQFP100 top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

Figure 37.

WLCSP104 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

Figure 38.

Figure 39.

WLCSP104 top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

Figure 40.

UFBGA132 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

Figure 41.

Figure 42.

UFBGA132 top view example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

Figure 43.

LQFP144 outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

Figure 44.

Figure 45.

LQFP144 top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

Figure 46.

Thermal resistance suffix 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131

Figure 47.

Thermal resistance suffix 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131

8/136 DS10002 Rev 10

STM32L151xE STM32L152xE

1 Introduction

Introduction

This datasheet provides the ordering information and mechanical device characteristics of the STM32L151xE and STM32L152xE ultra-low-power Arm ® Cortex ® -M3 based microcontroller product line. STM32L151xE and STM32L152xE devices are microcontrollers with a Flash memory density of 512 Kbytes.

The ultra-low-power STM32L151xE and STM32L152xE family includes devices in 5 different package types: from 64 pins to 144 pins. Depending on the device chosen, different sets of peripherals are included, the description below gives an overview of the complete range of peripherals proposed in this family.

These features make the ultra-low-power STM32L151xE and STM32L152xE microcontroller family suitable for a wide range of applications:

• Medical and handheld equipment

• Application control and user interface

• PC peripherals, gaming, GPS and sport equipment

• Alarm systems, wired and wireless sensors, video intercom

• Utility metering

This STM32L151xE and STM32L152xE datasheet must be read in conjunction with the

STM32L1xxxx reference manual (RM0038). The application note “Getting started with

STM32L1xxxx hardware development” (AN3216) gives a hardware implementation overview. Both documents are available from the STMicroelectronics website www.st.com

For information on the Arm

®(a)

Cortex

-M3 core, refer to the Arm

Cortex

-M3 technical reference manual, available from the www.arm.com website.

Figure 1 shows the general

block diagram of the device family.

For information on the device errata with respect to the datasheet and reference manual, refer to the STM32L15xE errata sheet (ES0235), available on the STMicroelectronics website www.st.com

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

DS10002 Rev 10 9/136

Description

2 Description

STM32L151xE STM32L152xE

The ultra-low-power STM32L151xE and STM32L152xE devices incorporate the connectivity power of the universal serial bus (USB) with the high-performance Arm ®

Cortex ® -M3 32-bit RISC core operating at a frequency of 32 MHz (33.3 DMIPS), a memory protection unit (MPU), high-speed embedded memories (Flash memory up to 512 Kbytes and RAM up to 80 Kbytes), and an extensive range of enhanced I/Os and peripherals connected to two APB buses.

The STM32L151xE and STM32L152xE devices offer two operational amplifiers, one 12-bit

ADC, two DACs, two ultra-low-power comparators, one general-purpose 32-bit timer, six general-purpose 16-bit timers and two basic timers, which can be used as time bases.

Moreover, the STM32L151xE and STM32L152xE devices contain standard and advanced communication interfaces: up to two I2Cs, three SPIs, two I2S, three USARTs, two UARTs and an USB. The STM32L151xE and STM32L152xE devices offer up to 34 capacitive sensing channels to simply add a touch sensing functionality to any application.

They also include a real-time clock and a set of backup registers that remain powered in

Standby mode.

Finally, the integrated LCD controller (except STM32L151xE devices) has a built-in LCD voltage generator that allows to drive up to 8 multiplexed LCDs with the contrast independent of the supply voltage.

The ultra-low-power STM32L151xE and STM32L152xE devices operate from a 1.8 to 3.6 V power supply (down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power supply without BOR option. They are available in the -40 to +85 °C and -40 to +105 °C temperature ranges. A comprehensive set of power-saving modes allows the design of lowpower applications.

10/136 DS10002 Rev 10

STM32L151xE STM32L152xE Description

Table 2. Ultra-low-power STM32L151xE and STM32L152xE device features and peripheral counts

Peripheral STM32L15xRE STM32L15xVE STM32L15xQE STM32L15xZE

Flash (Kbytes)

Data EEPROM (Kbytes)

RAM (Kbytes)

32 bit

Timers

Communication interfaces

General-purpose

Basic

SPI

USART

USB

GPIOs

512

8(3)

(1)

51 83 109 115

Operational amplifiers

12-bit synchronized ADC

Number of channels

12-bit DAC

Number of channels

LCD (2)

COM x SEG

Comparators

4x32

1 or 8x28

4x44 or 8x40

Capacitive sensing channels 23 33 34

Max. CPU frequency 32 MHz

Operating voltage

Operating temperatures

1.8 V to 3.6 V (down to 1.65 V at power-down) with BOR option

1.65 V to 3.6 V without BOR option

Ambient operating temperature: -40 °C to 85 °C / -40 °C to 105 °C

Junction temperature: –40 to + 110 °C

Packages LQFP64

LQFP100,

WLCSP104

1. 5 SPIs are USART configured in synchronous mode emulating SPI master.

2. STM32L152xx devices only.

UFBGA132 LQFP144

DS10002 Rev 10 11/136

Description STM32L151xE STM32L152xE

2.2

Note:

Ultra-low-power device continuum

The ultra-low-power family offers a large choice of cores and features. From proprietary 8bit to up to Cortex-M3, including the Cortex-M0+, the STM32Lx series are the best choice to answer the user needs, in terms of ultra-low-power features. The STM32 ultra-low-power series are the best fit, for instance, for gas/water meter, keyboard/mouse or fitness and healthcare, wearable applications. Several built-in features like LCD drivers, dual-bank memory, Low-power run mode, op-amp, AES 128-bit, DAC, USB crystal-less and many others clearly allow very cost-optimized applications to be built by reducing BOM.

STMicroelectronics as a reliable and long-term manufacturer ensures as much as possible the pin-to-pin compatibility between any STM8Lxxxxx and STM32Lxxxxx devices and between any of the STM32Lx and STM32Fx series. Thanks to this unprecedented scalability, the old applications can be upgraded to respond to the latest market features and efficiency demand.

2.2.1 Performance

All the families incorporate highly energy-efficient cores with both Harvard architecture and pipelined execution: advanced STM8 core for STM8L families and Arm Cortex-M3 core for

STM32L family. In addition specific care for the design architecture has been taken to optimize the mA/DMIPS and mA/MHz ratios.

This allows the ultra-low-power performance to range from 5 up to 33.3 DMIPs.

STM8L15xxx, STM32L15xxx and STM32L162xx share identical peripherals which ensure a very easy migration from one family to another:

• Analog peripherals: ADC, DAC and comparators

• Digital peripherals: RTC and some communication interfaces

To offer flexibility and optimize performance, the STM8L15xxx, STM32L15xxx and

STM32L162xx family uses a common architecture:

• Same power supply range from 1.65 V to 3.6 V

• Architecture optimized to reach ultra-low consumption both in low-power modes and

Run mode

• Fast startup strategy from low-power modes

• Flexible system clock

• Ultrasafe reset: same reset strategy including power-on reset, power-down reset, brownout reset and programmable voltage detector

2.2.4 Features

ST ultra-low-power continuum also lies in feature compatibility:

• More than 15 packages with pin count from 20 to 144 pins and size down to 3 x 3 mm

• Memory density ranging from 2 to 512 Kbytes

12/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

Figure 1. Ultra-low-power STM32L151xE and STM32L152xE block diagram

TRACECK, TRACED0, TRACED1, TRACED2, TRACED4

PA[15:0]

PB[15:0]

PC[15:0]

PD[15:0]

PE[15:0]

PH[2:0]

PF[15:0]

PG[15:0]

115 AF

MOSI, MISO,

SCK, NSS as AF

RX, TX, CTS, RTS,

SmartCard as AF

40 AF

VDDREF_ADC*

VSSREF_ADC*

NJTRST

JTDI

JTCK / SWCLK

JTMS / SWDAT

JTDO as AF

VDDA /

VSSA

COMPx_INx

2 channels

1 channel

JTAG & SW pbus ibus

M3 CPU

Fmax: 32 MHz Dbus

MPU

NVIC

GP DMA 7 channels

GP DMA2 5 channels

System

Supply monitoring

BOR / Bgap

PVD

Cap. sens

GP Comp

PU / PD

BOR

Int

@VDDA

GPIO PORT A

GPIO PORT B

GPIO PORT C

GPIO PORT D

GPIO PORT E

GPIO PORT H

GPIO PORT F

GPIO PORT G

EXT.IT

WKUP

SPI1

AHB/APB2 AHB/APB1

Trace Controller ETM

VDD CORE

@ VDD 33

POWER

VOLT. REG.

EEPROM 64 bit

512 KB PROGRAM

16 KB DATA

8KB BOOT

DUAL BANK

SRAM 80K

PDR

Vref

Supply monitoring

PDR

@ VDD33

XTAL OSC

1-24 MHz

AHBPCLK

APBPCLK

HCLK

FCLK

@VDDA

PLL &

Clock

Mgmt

WDG 32K

Standby interface RC HSI

RC MSI

XTAL 32 kHz

RTC V2

AWU

Reg 128

Backup interface

@VDD33

Backup

LCD Booster

TIMER2

TIMER3

TIMER4

TIMERS (32 bits)

USART2

USART3

USART4

USART5

VDD33=1.65V to 3.6V

Vss

NRST

OSC_IN

OSC_OUT

OSC32_IN

OSC32_OUT

RTC_OUT

TAMPER

VLCD = 2.5V to 3.6V

USART1

@VDDA

12bit ADC

Temp sensor

General purpose timers

TIMER9

TIMER10

TIMER11

USB SRAM 512 B

WinWATCHDOG

TIMER6

TIMER7

OPAMP1

OPAMP2

I2C1

I2C2

USB2.0 FS device

Cap. sensing

LCD 8x40

@VDDA

12bit DAC1

12bit DAC2

4 channels

RX, TX, CTS, RTS,

SmartCard as AF

RX, TX, CTS, RTS,

SmartCard as AF

RX, TX as AF

MOSI, MISO, SCK,NSS,WS, CK

MCK, SD as AF

MOSI, MISO, SCK,NSS,WS, CK

MCK, SD as AF

SCL, SDA

As AF

SCL, SDA, SMBus, PMBus

As AF

USB_DP

USB_DM

SEGx

COMx

DAC_OUT1 as AF

DAC_OUT2 as AF

VINP a

VOUT

VINP

VINM

VOUT

MSv34186V1

DS10002 Rev 10 13/136

Functional overview STM32L151xE STM32L152xE

The ultra-low-power STM32L151xE and STM32L152xE devices support dynamic voltage scaling to optimize its power consumption in run mode. The voltage from the internal lowdrop regulator that supplies the logic can be adjusted according to the system’s maximum operating frequency and the external voltage supply.

There are three power consumption ranges:

• Range 1 (V

range limited to 1.71 V - 3.6 V), with the CPU running at up to 32 MHz

• Range 2 (full V

range), with a maximum CPU frequency of 16 MHz

• Range 3 (full V

range), with a maximum CPU frequency limited to 4 MHz (generated only with the multispeed internal RC oscillator clock source)

Seven low-power modes are provided to achieve the best compromise between low-power consumption, short startup time and available wakeup sources:

• Sleep mode

In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake up the CPU when an interrupt/event occurs. Sleep mode power consumption at

16 MHz is about 1 mA with all peripherals off.

• Low-power run mode

This mode is achieved with the multispeed internal (MSI) RC oscillator set to the MSI range 0 or MSI range 1 clock range (maximum 131 kHz), execution from SRAM or

Flash memory, and internal regulator in low-power mode to minimize the regulator's operating current. In low-power run mode, the clock frequency and the number of enabled peripherals are both limited.

• Low-power sleep mode

This mode is achieved by entering Sleep mode with the internal voltage regulator in

Low-power mode to minimize the regulator’s operating current. In Low-power sleep mode, both the clock frequency and the number of enabled peripherals are limited; a typical example would be to have a timer running at 32 kHz.

When wakeup is triggered by an event or an interrupt, the system reverts to the run mode with the regulator on.

• Stop mode with RTC

Stop mode achieves the lowest power consumption while retaining the RAM and register contents and real time clock. All clocks in the V

CORE

domain are stopped, the

PLL, MSI RC, HSI RC and HSE crystal oscillators are disabled. The LSE or LSI is still running. The voltage regulator is in the low-power mode.

The device can be woken up from Stop mode by any of the EXTI line, in 8 µs. The EXTI line source can be one of the 16 external lines. It can be the PVD output, the

Comparator 1 event or Comparator 2 event (if internal reference voltage is on), it can be the RTC alarm(s), the USB wakeup, the RTC tamper events, the RTC timestamp event or the RTC wakeup.

14/136 DS10002 Rev 10

STM32L151xE STM32L152xE

Note:

Functional overview

• Stop mode without RTC

Stop mode achieves the lowest power consumption while retaining the RAM and register contents. All clocks are stopped, the PLL, MSI RC, HSI and LSI RC, LSE and

HSE crystal oscillators are disabled. The voltage regulator is in the low-power mode.

The device can be woken up from Stop mode by any of the EXTI line, in 8 µs. The EXTI line source can be one of the 16 external lines. It can be the PVD output, the

Comparator 1 event or Comparator 2 event (if internal reference voltage is on). It can also be wakened by the USB wakeup.

• Standby mode with RTC

Standby mode is used to achieve the lowest power consumption and real time clock.

The internal voltage regulator is switched off so that the entire V

CORE

domain is powered off. The PLL, MSI RC, HSI RC and HSE crystal oscillators are also switched off. The LSE or LSI is still running. After entering Standby mode, the RAM and register contents are lost except for registers in the Standby circuitry (wakeup logic, IWDG,

RTC, LSI, LSE Crystal 32K osc, RCC_CSR).

The device exits Standby mode in 60 µs when an external reset (NRST pin), an IWDG reset, a rising edge on one of the three WKUP pins, RTC alarm (Alarm A or Alarm B),

RTC tamper event, RTC timestamp event or RTC Wakeup event occurs.

• Standby mode without RTC

Standby mode is used to achieve the lowest power consumption. The internal voltage regulator is switched off so that the entire V

CORE

domain is powered off. The PLL, MSI

RC, HSI and LSI RC, HSE and LSE crystal oscillators are also switched off. After entering Standby mode, the RAM and register contents are lost except for registers in the Standby circuitry (wakeup logic, IWDG, RTC, LSI, LSE Crystal 32K osc,

RCC_CSR).

The device exits Standby mode in 60 µs when an external reset (NRST pin) or a rising edge on one of the three WKUP pin occurs.

The RTC, the IWDG, and the corresponding clock sources are not stopped automatically by entering Stop or Standby mode.

Table 3. Functionalities depending on the operating power supply range

Functionalities depending on the operating power supply range

(1)

Operating power supply range

DAC and ADC operation

USB

Dynamic voltage scaling range

= V

DDA

= 1.65 to 1.71 V Not functional Not functional

DDA

= 1.71 to 1.8 V

(2)

DDA

= 1.8 to 2.0 V

(2)

Not functional Not functional

Conversion time up to 500 Ksps

Not functional

Range 2 or Range 3

Range 1, Range 2 or

Range 3

Range 1, Range 2 or

Range 3

DS10002 Rev 10 15/136

Functional overview STM32L151xE STM32L152xE

Table 3. Functionalities depending on the operating power supply range (continued)

Functionalities depending on the operating power supply range

(1)

Operating power supply range

DAC and ADC operation

USB

Dynamic voltage scaling range

DDA

= 2.0 to 2.4 V

= 2.4 to 3.6 V

Conversion time up to 500 Ksps

Conversion time up to 1 Msps

Functional

(3)

Range 1, Range 2 or

Range 3

Range 1, Range 2 or

Range 3

1. The GPIO speed also depends from VDD voltage and the user has to refer to

Table 44: I/O AC characteristics for more information about I/O speed.

2. CPU frequency changes from initial to final must respect “F

CPU

initial < 4*F

CPU

final” to limit V

CORE

drop changes. For example to switch from 4.2 MHz to 32 MHz, the user can switch from 4.2 MHz to 16 MHz, wait 5 µs, then switch from 16 MHz to 32 MHz.

3. Must be USB compliant from I/O voltage standpoint, the minimum V

is 3.0 V.

Table 4. CPU frequency range depending on dynamic voltage scaling

CPU frequency range Dynamic voltage scaling range

16 MHz to 32 MHz (1ws)

32 kHz to 16 MHz (0ws)

8 MHz to 16 MHz (1ws)

32 kHz to 8 MHz (0ws)

2.1MHz to 4.2 MHz (1ws)

32 kHz to 2.1 MHz (0ws)

Range 1

Range 2

Range 3

16/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

CPU

Flash

RAM

Backup Registers

EEPROM

Brown-out rest

(BOR)

DMA

Programmable

Voltage Detector

(PVD)

Power On Reset

(POR)

Power Down Rest

(PDR)

High Speed

Internal (HSI)

High Speed

External (HSE)

Low Speed Internal

(LSI)

Low Speed

External (LSE)

Multi-Speed

Internal (MSI)

Inter-Connect

Controller

RTC

RTC Tamper

Auto WakeUp

(AWU)

LCD

USB

USART

SPI

I2C

Table 5. Functionalities depending on the working mode (from Run/active down to standby)

Stop Standby

Ips Run/Active Sleep

Lowpower

Run

Lowpower

Sleep -

Wakeup capability

(1)

DS10002 Rev 10 17/136

Functional overview STM32L151xE STM32L152xE

Table 5. Functionalities depending on the working mode (from Run/active down to standby) (continued)

Stop Standby

Ips Run/Active Sleep

Lowpower

Run

Lowpower

Sleep -

Wakeup capability

ADC

DAC

Tempsensor

OP amp

Comparators

16-bit and 32-bit

Timers

IWDG

WWDG

Touch sensing

Systic Timer

GPIOs

Wakeup time to

Run mode

0 µs

0.4 µs

3 µs

46 µs

< 8 µs

3 pins

58 µs

Consumption

=1.8 to 3.6 V

(Typ)

Down to 195

µA/MHz (from

Flash)

Down to 38

µA/MHz (from

Flash)

Down to

11 µA

Down to

4.6 µA

0.53 µA

(no RTC)

=1.8V

1.2 µA

(with RTC)

=1.8V

0.56 µA

(no RTC)

=3.0V

1.4 µA

(with RTC)

=3.0V

1. The startup on communication line wakes the CPU which was made possible by an EXTI, this induces a delay before entering run mode.

0.285 µA

(no RTC)

=1.8V

0.97 µA

(with RTC)

=1.8V

0.29 µA

(no RTC)

=3.0V

1.11 µA

(with RTC)

=3.0V

3.2 Arm

®

Cortex

®

-M3 core with MPU

The Arm ® Cortex ® -M3 processor is the industry leading processor for embedded systems. It has been developed to provide a low-cost platform that meets the needs of MCU implementation, with a reduced pin count and low-power consumption, while delivering outstanding computational performance and an advanced system response to interrupts.

The Arm ® Cortex ® -M3 32-bit RISC processor features exceptional code-efficiency, delivering the high-performance expected from an Arm core in the memory size usually associated with 8- and 16-bit devices.

18/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The memory protection unit (MPU) improves system reliability by defining the memory attributes (such as read/write access permissions) for different memory regions. It provides up to eight different regions and an optional predefined background region.

Owing to its embedded Arm core, the STM32L151xE and STM32L152xE devices are compatible with all Arm tools and software.

Nested vectored interrupt controller (NVIC)

The ultra-low-power STM32L151xE and STM32L152xE devices embed a nested vectored interrupt controller able to handle up to 56 maskable interrupt channels (not including the 16 interrupt lines of Arm ® Cortex ® -M3) and 16 priority levels.

• Closely coupled NVIC gives low-latency interrupt processing

• Interrupt entry vector table address passed directly to the core

• Closely coupled NVIC core interface

• Allows early processing of interrupts

• Processing of late arriving , higher-priority interrupts

• Support for tail-chaining

• Processor state automatically saved on interrupt entry, and restored on interrupt exit, with no instruction overhead

This hardware block provides flexible interrupt management features with minimal interrupt latency.

3.3

3.3.1

3.3.2

Reset and supply management

Power supply schemes

• V

= 1.65 to 3.6 V: external power supply for I/Os and the internal regulator. Provided externally through V

pins.

• V

SSA

, V

DDA

= 1.65 to 3.6 V: external analog power supplies for ADC, reset blocks, RCs and PLL (minimum voltage to be applied to V

DDA and V

SSA must be connected to V

DD and V

SS is 1.8 V when the ADC is used). V

, respectively.

DDA

Power supply supervisor

The device has an integrated ZEROPOWER power-on reset (POR)/power-down reset

(PDR) that can be coupled with a brownout reset (BOR) circuitry.

The device exists in two versions:

• The version with BOR activated at power-on operates between 1.8 V and 3.6 V.

• The other version without BOR operates between 1.65 V and 3.6 V.

After the V

threshold is reached (1.65 V or 1.8 V depending on the BOR which is active or not at power-on), the option byte loading process starts, either to confirm or modify default thresholds, or to disable the BOR permanently: in this case, the V

1.65 V (whatever the version, BOR active or not, at power-on).

min value becomes

When BOR is active at power-on, it ensures proper operation starting from 1.8 V whatever the power ramp-up phase before it reaches 1.8 V. When BOR is not active at power-up, the power ramp-up must guarantee that 1.65 V is reached on V

POR area.

at least 1 ms after it exits the

DS10002 Rev 10 19/136

Functional overview

Note:

STM32L151xE STM32L152xE

Five BOR thresholds are available through option bytes, starting from 1.8 V to 3 V. To reduce the power consumption in Stop mode, it is possible to automatically switch off the internal reference voltage (V

REFINT

) in Stop mode. The device remains in reset mode when

DD is below a specified threshold, V reset circuit.

POR/PDR or V

BOR

, without the need for any external

The start-up time at power-on is typically 3.3 ms when BOR is active at power-up, the startup time at power-on can be decreased down to 1 ms typically for device s with BOR inactive at power-up.

The device features an embedded programmable voltage detector (PVD) that monitors the

DDA

power supply and compares it to the V

PVD

threshold. This PVD offers 7 different levels between 1.85 V and 3.05 V, chosen by software, with a step around 200 mV. An interrupt can be generated when V

DDA

is higher than the V

PVD

DDA

drops below the V

PVD

threshold and/or when

threshold. The interrupt service routine can then generate a warning message and/or put the MCU into a safe state. The PVD is enabled by software.

The regulator has three operation modes: main (MR), low-power (LPR) and power down.

• MR is used in Run mode (nominal regulation)

• LPR is used in the Low-power run, Low-power sleep and Stop modes

• Power down is used in Standby mode. The regulator output is high impedance, the kernel circuitry is powered down, inducing zero consumption but the contents of the registers and RAM are lost except for the standby circuitry (wakeup logic, IWDG, RTC,

LSI, LSE crystal 32K osc, RCC_CSR).

At startup, boot pins are used to select one of three boot options:

• Boot from Flash memory

• Boot from System memory

• Boot from embedded RAM

The boot from Flash usually boots at the beginning of the Flash (bank 1). An additional boot mechanism is available through user option byte, to allow booting from bank 2 when bank 2 contains valid code. This dual boot capability can be used to easily implement a secure field software update mechanism.

The boot loader is located in System memory. It is used to reprogram the Flash memory by using USART1, USART2 or USB. See Application note “STM32 microcontroller system memory boot mode” (AN2606) for details.

20/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The clock controller distributes the clocks coming from different oscillators to the core and the peripherals. It also manages clock gating for low-power modes and ensures clock robustness. It features:

• Clock prescaler : to get the best trade-off between speed and current consumption, the clock frequency to the CPU and peripherals can be adjusted by a programmable prescaler.

• Safe clock switching : clock sources can be changed safely on the fly in run mode through a configuration register.

• Clock management : to reduce power consumption, the clock controller can stop the clock to the core, individual peripherals or memory.

• System clock source : three different clock sources can be used to drive the master clock SYSCLK:

– 1-24 MHz high-speed external crystal (HSE), that can supply a PLL

– 16 MHz high-speed internal RC oscillator (HSI), trimmable by software, that can supply a PLL

– Multispeed internal RC oscillator (MSI), trimmable by software, able to generate 7 frequencies (65 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.1 MHz, 4.2 MHz).

When a 32.768 kHz clock source is available in the system (LSE), the MSI frequency can be trimmed by software down to a ±0.5% accuracy.

• Auxiliary clock source : two ultra-low-power clock sources that can be used to drive the LCD controller and the real-time clock:

– 32.768 kHz low-speed external crystal (LSE)

– 37 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.

The LSI clock can be measured using the high-speed internal RC oscillator for greater precision.

• RTC and LCD clock sources: the LSI, LSE or HSE sources can be chosen to clock the RTC and the LCD, whatever the system clock.

• USB clock source: the embedded PLL has a dedicated 48 MHz clock output to supply the USB interface.

• Startup clock : after reset, the microcontroller restarts by default with an internal 2 MHz clock (MSI). The prescaler ratio and clock source can be changed by the application program as soon as the code execution starts.

• Clock security system (CSS): this feature can be enabled by software. If a HSE clock failure occurs, the master clock is automatically switched to HSI and a software interrupt is generated if enabled.

• Clock-out capability (MCO: microcontroller clock output): it outputs one of the internal clocks for external use by the application.

Several prescalers allow the configuration of the AHB frequency, each APB (APB1 and

APB2) domains. The maximum frequency of the AHB and the APB domains is 32 MHz. See

Figure 2 for details on the clock tree.

DS10002 Rev 10 21/136

Functional overview STM32L151xE STM32L152xE

Figure 2. Clock tree

Standby supplied voltage domain enable

Watchdog

LSI RC LSI tempo

Watchdog

LSE OSC LSE tempo

RTC enable

RTC

Radio Sleep Timer enable

Radio Sleep Timer

LS LS LS LS

@V33

MSI RC level shifters

DDCORE

@V33

HSI RC level shifters

DDCORE

@V33

HSE

OSC level shifters

DDCORE

1 MHz

/ 2,4,8,16

@V33

1 MHz clock detector

LS ck_lsi ck_lse ck_msi ck_hsi ck_hse ck_pllin

@V33 ck_pll

PLL

X 3,4,6,8,12

16,24,32,48

/ 2, 3, 4 level shifters

HSE present or not

DDCORE usben and (not deepsleep)

CK_USB48

Clock source control

CK_LCD

LCD enable

CK_ADC

ADC enable

/ 1,2,4,8,16

MCO not deepsleep

CK_PWR not deepsleep

CK_FCLK

System clock not (sleep or deepsleep not (sleep or deepsleep)

/ 8

AHB prescaler

/ 1,2,..512

APB1 APB2 prescaler prescaler

/ 1,2,4,8,16 / 1,2,4,8,16

CK_CPU

CK_TIMSYS

CK_TIMTGO

CK_APB1

CK_APB2 timer9en and (not deepsleep) apb1 periphen and (not deepsleep) if (APB1 presc = 1)x1 else x2 apb2 periphen and (not deepsleep)

MS18583V1

22/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain the sub-second, second, minute, hour (12/24 hour), week day, date, month, year, in BCD

(binary-coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are made automatically. The RTC provides two programmable alarms and programmable periodic interrupts with wakeup from Stop and Standby modes.

The programmable wakeup time ranges from 120 µs to 36 hours.

The RTC can be calibrated with an external 512 Hz output, and a digital compensation circuit helps reduce drift due to crystal deviation.

The RTC can also be automatically corrected with a 50/60Hz stable powerline.

The RTC calendar can be updated on the fly down to sub second precision, which enables network system synchronization.

A time stamp can record an external event occurrence, and generates an interrupt.

There are thirty-two 32-bit backup registers provided to store 128 bytes of user application data. They are cleared in case of tamper detection.

Three pins can be used to detect tamper events. A change on one of these pins can reset backup register and generate an interrupt. To prevent false tamper event, like ESD event, these three tamper inputs can be digitally filtered.

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the

GPIO pins are shared with digital or analog alternate functions, and can be individually remapped using dedicated AFIO registers. All GPIOs are high current capable. The alternate function configuration of I/Os can be locked if needed following a specific sequence in order to avoid spurious writing to the I/O registers. The I/O controller is connected to the AHB with a toggling speed of up to 16 MHz.

External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 24 edge detector lines used to generate interrupt/event requests. Each line can be individually configured to select the trigger event

(rising edge, falling edge, both) and can be masked independently. A pending register maintains the status of the interrupt requests. The EXTI can detect an external line with a pulse width shorter than the Internal APB2 clock period. Up to 115 GPIOs can be connected to the 16 external interrupt lines. The 8 other lines are connected to RTC, PVD, USB, comparator events or capacitive sensing acquisition.

DS10002 Rev 10 23/136

Functional overview STM32L151xE STM32L152xE

3.7 Memories

The STM32L151xE and STM32L152xE devices have the following features:

• 80 Kbytes of embedded RAM accessed (read/write) at CPU clock speed with 0 wait states. With the enhanced bus matrix, operating the RAM does not lead to any performance penalty during accesses to the system bus (AHB and APB buses).

• The non-volatile memory is divided into three arrays:

– 512 Kbytes of embedded Flash program memory

– 16 Kbytes of data EEPROM

– Options bytes

Flash program and data EEPROM are divided into two banks, this enables writing in one bank while running code or reading data in the other bank.

The options bytes are used to write-protect or read-out protect the memory (with 4

Kbytes granularity) and/or readout-protect the whole memory with the following options:

– Level 0: no readout protection

– Level 1: memory readout protection, the Flash memory cannot be read from or written to if either debug features are connected or boot in RAM is selected

– Level 2: chip readout protection, debug features (Arm Cortex-M3 JTAG and serial wire) and boot in RAM selection disabled (JTAG fuse)

The whole non-volatile memory embeds the error correction code (ECC) feature.

3.8 DMA (direct memory access)

The flexible 12-channel, general-purpose DMA is able to manage memory-to-memory, peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports circular buffer management, avoiding the generation of interrupts when the controller reaches the end of the buffer.

Each channel is connected to dedicated hardware DMA requests, with software trigger support for each channel. Configuration is done by software and transfer sizes between source and destination are independent.

The DMA can be used with the main peripherals: SPI, I

C, USART, general-purpose timers,

DAC and ADC.

24/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The LCD drives up to 8 common terminals and 44 segment terminals to drive up to 320 pixels.

• Internal step-up converter to guarantee functionality and contrast control irrespective of

. This converter can be deactivated, in which case the V the voltage to the LCD

LCD

pin is used to provide

• Supports static, 1/2, 1/3, 1/4 and 1/8 duty

• Supports static, 1/2, 1/3 and 1/4 bias

• Phase inversion to reduce power consumption and EMI

• Up to 8 pixels can be programmed to blink

• Unneeded segments and common pins can be used as general I/O pins

• LCD RAM can be updated at any time owing to a double-buffer

• The LCD controller can operate in Stop mode

3.10 ADC (analog-to-digital converter)

A 12-bit analog-to-digital converters is embedded into STM32L151xE and STM32L152xE devices with up to 40 external channels, performing conversions in single-shot or scan mode. In scan mode, automatic conversion is performed on a selected group of analog inputs with up to 28 external channels in a group.

The ADC can be served by the DMA controller.

An analog watchdog feature allows very precise monitoring of the converted voltage of one, some or all scanned channels. An interrupt is generated when the converted voltage is outside the programmed thresholds.

The events generated by the general-purpose timers (TIMx) can be internally connected to the ADC start triggers, to allow the application to synchronize A/D conversions and timers.

An injection mode allows high priority conversions to be done by interrupting a scan mode which runs in as a background task.

The ADC includes a specific low-power mode. The converter is able to operate at maximum speed even if the CPU is operating at a very low frequency and has an auto-shutdown function. The ADC’s runtime and analog front-end current consumption are thus minimized whatever the MCU operating mode.

The temperature sensor (TS) generates a voltage V

SENSE temperature.

that varies linearly with

The temperature sensor is internally connected to the ADC_IN16 input channel which is used to convert the sensor output voltage into a digital value.

The sensor provides good linearity but it has to be calibrated to obtain good overall accuracy of the temperature measurement. As the offset of the temperature sensor varies from chip to chip due to process variation, the uncalibrated internal temperature sensor is suitable for applications that detect temperature changes only.

To improve the accuracy of the temperature sensor measurement, each device is individually factory-calibrated by ST. The temperature sensor factory calibration data are

DS10002 Rev 10 25/136

Functional overview STM32L151xE STM32L152xE

stored by ST in the system memory area, accessible in read-only mode. See Table 60:

Temperature sensor calibration values .

3.10.2 Internal voltage reference (V

REFINT

)

The internal voltage reference (V

REFINT

ADC and Comparators. V

REFINT enables accurate monitoring of the V

) provides a stable (bandgap) voltage output for the

is internally connected to the ADC_IN17 input channel. It

value (when no external voltage, VREF+, is available for ADC). The precise voltage of V

REFINT

is individually measured for each part by

ST during production test and stored in the system memory area. It is accessible in read-

only mode. See Table 15: Embedded internal reference voltage calibration values

3.11 DAC (digital-to-analog converter)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two analog voltage signal outputs. The chosen design structure is composed of integrated resistor strings and an amplifier in non-inverting configuration.

This dual digital Interface supports the following features:

• Two DAC converters: one for each output channel

• 8-bit or 12-bit monotonic output

• Left or right data alignment in 12-bit mode

• Synchronized update capability

• Noise-wave generation

• Triangular-wave generation

• Dual DAC channels, independent or simultaneous conversions

• DMA capability for each channel (including the underrun interrupt)

• External triggers for conversion

• Input reference voltage V

REF+

Eight DAC trigger inputs are used in the STM32L151xE and STM32L152xE devices. The

DAC channels are triggered through the timer update outputs that are also connected to different DMA channels.

The STM32L151xE and STM32L152xE devices embed two operational amplifiers with external or internal follower routing capability (or even amplifier and filter capability with external components). When one operational amplifier is selected, one external ADC channel is used to enable output measurement.

The operational amplifiers feature:

• Low input bias current

• Low offset voltage

• Low-power mode

• Rail-to-rail input

26/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The STM32L151xE and STM32L152xE devices embed two comparators sharing the same current bias and reference voltage. The reference voltage can be internal or external

(coming from an I/O).

• One comparator with fixed threshold

• One comparator with rail-to-rail inputs, fast or slow mode. The threshold can be one of the following:

– DAC output

– External I/O

– Internal reference voltage (V

REFINT

) or a sub-multiple (1/4, 1/2, 3/4)

Both comparators can wake up from Stop mode, and be combined into a window comparator.

The internal reference voltage is available externally via a low-power / low-current output buffer (driving current capability of 1 µA typical).

The system configuration controller provides the capability to remap some alternate functions on different I/O ports.

The highly flexible routing interface allows the application firmware to control the routing of different I/Os to the TIM2, TIM3 and TIM4 timer input captures. It also controls the routing of internal analog signals to ADC1, COMP1 and COMP2 and the internal reference voltage

REFINT

The STM32L151xE and STM32L152xE devices provide a simple solution for adding capacitive sensing functionality to any application. Thesedevices offer up to 34 capacitive sensing channels distributed over 11 analog I/O groups. Both software and timer capacitive sensing acquisition modes are supported.

Capacitive sensing technology is able to detect the presence of a finger near a sensor which is protected from direct touch by a dielectric (glass, plastic...). The capacitive variation introduced by the finger (or any conductive object) is measured using a proven implementation based on a surface charge transfer acquisition principle. It consists of charging the sensor capacitance and then transferring a part of the accumulated charges into a sampling capacitor until the voltage across this capacitor has reached a specific threshold. The capacitive sensing acquisition only requires few external components to operate. This acquisition is managed directly by the GPIOs, timers and analog I/O groups

(see Section 3.14: System configuration controller and routing interface ).

Reliable touch sensing functionality can be quickly and easily implemented using the free

STM32L1xx STMTouch touch sensing firmware library.

DS10002 Rev 10 27/136

Functional overview STM32L151xE STM32L152xE

3.16 Timers and watchdogs

The ultra-low-power STM32L151xE and STM32L152xE devices include seven generalpurpose timers, two basic timers, and two watchdog timers.

Table 6 compares the features of the general-purpose and basic timers.

Timer

Counter resolution

Counter type

Table 6. Timer feature comparison

Prescaler factor

DMA request generation

Capture/compare channels

Complementary outputs

TIM2,

TIM3,

TIM4

16-bit

Up, down, up/down

Any integer between

1 and 65536

Yes 4 No

TIM5

TIM9

TIM10,

TIM11

TIM6,

TIM7

32-bit

16-bit

Up, down, up/down

Any integer between

1 and 65536

Any integer between

1 and 65536

Any integer between

1 and 65536

Any integer between

1 and 65536

Yes

(TIM2,

TIM11)

There are seven synchronizable general-purpose timers embedded in the STM32L151xE and STM32L152xE devices (see

Table 6

for differences).

TIM2, TIM3, TIM4, TIM5

TIM2, TIM3, TIM4 are based on 16-bit auto-reload up/down counter. TIM5 is based on a 32bit auto-reload up/down counter. They include a 16-bit prescaler. They feature four independent channels each for input capture/output compare, PWM or one-pulse mode output. This gives up to 16 input captures/output compares/PWMs on the largest packages.

TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together or with the TIM10,

TIM11 and TIM9 general-purpose timers via the Timer Link feature for synchronization or event chaining. Their counter can be frozen in debug mode. Any of the general-purpose timers can be used to generate PWM outputs.

TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation.

These timers are capable of handling quadrature (incremental) encoder signals and the digital outputs from 1 to 3 hall-effect sensors.

TIM10, TIM11 and TIM9

TIM10 and TIM11 are based on a 16-bit auto-reload upcounter. TIM9 is based on a 16-bit auto-reload up/down counter. They include a 16-bit prescaler. TIM10 and TIM11 feature one independent channel, whereas TIM9 has two independent channels for input capture/output compare, PWM or one-pulse mode output. They can be synchronized with the TIM2, TIM3,

TIM4, TIM5 full-featured general-purpose timers.

28/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

They can also be used as simple time bases and be clocked by the LSE clock source

(32.768 kHz) to provide time bases independent from the main CPU clock.

3.16.2 Basic timers (TIM6 and TIM7)

These timers are mainly used for DAC trigger generation. They can also be used as generic

16-bit time bases.

This timer is dedicated to the OS, but could also be used as a standard downcounter. It is based on a 24-bit downcounter with autoreload capability and a programmable clock source. It features a maskable system interrupt generation when the counter reaches 0.

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an independent 37 kHz internal RC and, as it operates independently of the main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog to reset the device when a problem occurs, or as a free-running timer for application timeout management. It is hardware- or software-configurable through the option bytes. The counter can be frozen in debug mode.

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It can be used as a watchdog to reset the device when a problem occurs. It is clocked from the main clock. It has an early warning interrupt capability and the counter can be frozen in debug mode.

Up to two I²C bus interfaces can operate in multimaster and slave modes. They can support standard and fast modes.

They support dual slave addressing (7-bit only) and both 7- and 10-bit addressing in master mode. A hardware CRC generation/verification is embedded.

They can be served by DMA and they support SM Bus 2.0/PM Bus.

The three USART and two UART interfaces are able to communicate at speeds of up to 4

Mbit/s. They support IrDA SIR ENDEC and have LIN Master/Slave capability. The three

USARTs provide hardware management of the CTS and RTS signals and are ISO 7816 compliant.

All USART/UART interfaces can be served by the DMA controller.

DS10002 Rev 10 29/136

Functional overview STM32L151xE STM32L152xE

3.17.3 Serial peripheral interface (SPI)

Up to three SPIs are able to communicate at up to 16 Mbits/s in slave and master modes in full-duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC generation/verification supports basic SD Card/MMC modes.

The SPIs can be served by the DMA controller.

Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can operate in master or slave mode, and can be configured to operate with a 16-/32-bit resolution as input or output channels. Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the I2S interfaces is/are configured in master mode, the master clock can be output to the external DAC/CODEC at 256 times the sampling frequency.

The I2Ss can be served by the DMA controller.

The STM32L151xE and STM32L152xE devices embed a USB device peripheral compatible with the USB full-speed 12 Mbit/s. The USB interface implements a full-speed (12 Mbit/s) function interface. It has software-configurable endpoint setting and supports suspend/resume. The dedicated 48 MHz clock is generated from the internal main PLL (the clock source must use a HSE crystal oscillator).

3.18 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit data word and a fixed generator polynomial.

Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.

30/136 DS10002 Rev 10

STM32L151xE STM32L152xE Functional overview

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug port that enables either a serial wire debug or a JTAG probe to be connected to the target.

The JTAG JTMS and JTCK pins are shared with SWDAT and SWCLK, respectively, and a specific sequence on the JTMS pin is used to switch between JTAG-DP and SW-DP.

The JTAG port can be permanently disabled with a JTAG fuse.

3.19.2 Embedded Trace Macrocell™

The Arm ® Embedded Trace Macrocell provides a greater visibility of the instruction and data flow inside the CPU core by streaming compressed data at a very high rate from the

STM32L151xE and STM32L152xE device through a small number of ETM pins to an external hardware trace port analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or any other high-speed channel. Real-time instruction and data flow activity can be recorded and then formatted for display on the host computer running debugger software. TPA hardware is commercially available from common development tool vendors. It operates with third party debugger software tools.

DS10002 Rev 10 31/136

Pin descriptions STM32L151xE STM32L152xE

Figure 3. STM32L15xRE LQFP64 pinout

LCD

PC13-WKUP2

PC14-OSC32_IN

PC15-OSC32_OUT

PH0 -OSC_IN

PH1- OSC_OUT

NRST

PC0

PC1

PC2

PC3

VSSA

VDDA

PA0-WKUP1

PA1

PA2

64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49

2 47

3 46

7 42

8 41

LQFP64

13 36

14 35

15 34

17 18 19 20 21 22 23 24 25 26 27 28

29 30 31 32

VDD_2

VSS_ 2

PA13

PA12

PA11

PA10

PA9

PA8

PC9

PC8

PC7

PC6

PB15

PB14

PB13

PB12 ai15693c

1. This figure shows the package top view.

32/136 DS10002 Rev 10

STM32L151xE STM32L152xE

Figure 4. STM32L15xVE LQFP100 pinout

Pin descriptions

PE2

PE3

PE4

PE5

PE6-WKUP3

LCD

PC13-WKUP2

PC14-OSC32_IN

PC15-OSC32_OUT

VSS_5

VDD_5

PH0-OSC_IN

PH1-OSC_OUT

NRST

PC0

PC1

PC2

PC3

VSSA

VREF-

VREF+

VDDA

PA0-WKUP1

PA1

PA2

LQFP100

VDD_2

VSS_2

PH2

PA13

PA12

PA11

PA10

PA9

PA8

PC9

PC8

PC7

PC6

PD15

PD14

PD13

PD12

PD11

PD10

PD9

PD8

PB15

PB14

PB13

PB12

69 ai15692c

1. This figure shows the package top view.

DS10002 Rev 10 33/136

Pin descriptions STM32L151xE STM32L152xE

Figure 5. STM32L15xVEY WLCSP104 ballout

2 3 4 5 6 7 8 9

VSS_2 PD0 PD4 PD7 PB4 PB5 BOOT0 PE1 VDD_3

PA15 PC12 PD5

VDD_2 PC11 PD2

PH2 VSS_2 PA14

PA11 PA12 PA13

PA9

PC7

PA10 PA8

PC8 PD15

PD6

PD3

PD1

PC10

PC9

PB3

PB6

PB8

PB7

PB9

PE2

PE0

VSS_3

PE3

PE6

WKUP3

VLCD

VDD_3

PE4

PE5

PC13

WKUP2

PC14

OSC32IN

PC15

OSC32OUT

VSS_5 VDD_5

PC0 NRST

PH0

OSCIN

PH1

OSCOUT

PD11 VDDA VREF+ PC3 PC2

PC6 PD13 PD12 PD8 PA6 PA3 VREFPC1

PD14

PD10

PB14

PD9 PB13

PB15 VDD_1

VSS_1 PB11

PB12

PE15

PE10

PE13

PB0

PB1

PA4

PA7

PA2

VSS_4

PE14 PE11 PE7 PC4 VDD_4

VSSA

PA0

WKUP1

PA1

VSS_1 PB10 PE12 PE9 PE8 PB2 PC5 PA5 VDD_4

MSv41009V1

1. This figure shows the package top view.

34/136 DS10002 Rev 10

STM32L151xE STM32L152xE

1 2

Figure 6. STM32L15xQE UFBGA132 ballout

3 4 5 6 7 8 9 10 11

Pin descriptions

PE3 PE1 PB8 BOOT0 PD7 PD5 PB4 PB3 PA15 PA14 PA13 PA12

PE4 PE2 PB9 PB7 PB6 PD6 PD4 PD3 PD1 PC12 PC10 PA11

PC13-

WKUP2

PE5

PC14-

OSC32

_IN

PC15-

OSC32

_OUT

PH0

OSC_IN

PE6-

WKUP3

VLCD

VSS_5

PH1

OSC_

OUT

VDD_5

PC0 NRST

PE0

VSS_3

VSS_6

PF4

PF6

VDD_6

VDD_3

PF2

PF3

PF5

PF7

PF8

PB5

PF1

PG14

PF0

VSS_9

PG13

PG12

VSS_10

VDD_9 VDD_10

PD2

PG10

PD0

PG9

PG5

PG3

PG1

PG0

PC11

PA9

PC8

PG4

PG2

PD15

PH2

PA8

PC7

VSS_2

VDD_2

PD14

PA10

PC9

PC6

VSS_1

VDD_1

PD13

PF12 PF14 PF15 PD12 PD11 PD10 VSSA PC1 PC2 PA4 PA7

NC PC3 PA2 PA5 PC4

VREF+

PA0-

WKUP1

VDDA

PA3 PA6 PC5

PA1

OPAMP1

_VINM

OPAMP2

_VINM

PB0

PF9

PF11

PB2

PB1

PF13

PE8

PE7

PD9

PE10

PE9

PD8

PE11

PB15

PE12 PB10

PE13

PB14

PB11

PE14

PB13

PB12

PE15

MS33002V1

1. This figure shows the package top view.

DS10002 Rev 10 35/136

Pin descriptions

Figure 7. STM32L15xZE LQFP144 pinout

STM32L151xE STM32L152xE

PE2

PE3

PE4

PE5

PE6-WKUP3

VLCD

PC13-WKUP2

PC14-OSC32_IN

PC15-OSC32_OUT

PF0

PF1

PF2

PF3

PF4

PF5

SS_5

DD_5

PF6

PF7

PF8

PF9

PF10

OSC_IN

OSC_OUT

NRST

PC0

PC1

PC2

PC3

REF-

SSA

REF+

DDA

PA0 -WKUP1

PA1

PA2

LQFP144

102

101

100

108

107

106

105

104

103

PG6

PG5

PG4

PG3

PG2

PD15

PD14

DD_8

SS_8

PD13

PD12

PD11

PD10

PD9

PD8

PB15

PB14

PB13

PB12

DD_2

SS_2

PH2

PA13

PA12

PA11

PA10

PA9

PA8

PC9

PC8

PC7

PC6

DD_9

SS_9

PG8

PG7

MS18581V2

1. This figure shows the package top view.

36/136 DS10002 Rev 10

STM32L151xE STM32L152xE Pin descriptions

Name

Table 7. Legend/abbreviations used in the pinout table

Abbreviation Definition

Pin name

Pin type

I/O structure

Unless otherwise specified in brackets below the pin name, the pin function during and after reset is the same as the actual pin name

Supply pin

Input only pin

I/O

Input / output pin

5 V tolerant I/O

Standard 3.3 V I/O

Dedicated BOOT0 pin

Pin functions

Notes

RST Bidirectional reset pin with embedded weak pull-up resistor

Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate functions

Functions selected through GPIOx_AFR registers

Additional functions

Functions directly selected/enabled through peripheral registers

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

1 B2 1 D6 PE2 I/O FT

3 B1 3 C8

4 C2 4 B9

PE3

PE4

PE5

PE6-

WKUP3

LCD

(3)

I/O FT

S -

7 C1 7 2 C9 PC13-WKUP2 I/O FT

PE2

PE3

PE4

PE5

PE6

LCD

PC13

TIM3_ETR/LCD_SEG38/

TRACECLK

TIM3_CH1/LCD_SEG39/

TRACED0

TIM3_CH2/TRACED1

TIM9_CH1/TRACED2

TIM9_CH2/TRACED3

WKUP3/

RTC_TAMP3

WKUP2/RTC_TA

MP1/RTC_TS/

RTC_OUT

DS10002 Rev 10 37/136

Pin descriptions STM32L151xE STM32L152xE

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

8 D1 8 3 D8

9 E1 9 4 D9

10 D6

11 D5 -

12 D4

13 E4

14 F3

15 F4 -

16 F2 10 E8

17 G2 11 E9

18 G3 -

19 G4 -

PC14-

OSC32_IN

(4)

PC15-

OSC32_OUT

PF0

PF1

PF2

PF3

PF4

PF5

SS_5

DD_5

PF6

PF7

I/O TC

I/O FT

S -

I/O FT

10 G9

PF8

PF9

I/O FT

PF8

PF9 21 J6 -

22 PF10 I/O FT PF10

23 F1 12 5 F8 PH0-OSC_IN

(5)

24 G1 13 6 F9

PH1-

OSC_OUT

(5)

25 H2 14 7 F7 NRST

I/O TC

I/O RST

PH0

PH1

NRST

26 H1 15 8 F6 PC0 I/O FT PC0

27 J2 16 9 H9 PC1

PC2

I/O FT

PC1

PC2

PC14

PC15

PF0

PF1

PF2

PF3

PF4

PF5

SS_5

DD_5

PF6

PF7

TIM5_CH1/TIM5_ETR

TIM5_CH2

TIM5_CH3

TIM5_CH4

LCD_SEG18

LCD_SEG19

LCD_SEG20

OSC32_IN

OSC32_OUT

ADC_IN27

ADC_IN28/

COMP1_INP

ADC_IN29/

COMP1_INP

ADC_IN30/

COMP1_INP

ADC_IN31/

COMP1_INP

OSC_IN

OSC_OUT

ADC_IN10/

COMP1_INP

ADC_IN11/

COMP1_INP

ADC_IN12/

COMP1_INP

38/136 DS10002 Rev 10

STM32L151xE STM32L152xE Pin descriptions

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

11 G8

12 J9

31 20 H8

32 L1 21 G7

33 M1 22 13 G6

14 K9

15 L9

PC3

PC2

SSA

REF-

REF+

DDA

PA0-WKUP1

PA1

PA2

I/O FT

I/O TC

I/O FT

PC2

PC3

SSA

REF-

REF+

DDA

PA0

PA1

PA2

OPAMP1_VINM I TC

OPAMP1_

VINM

LCD_SEG20

LCD_SEG21

TIM2_CH1_ETR/

TIM5_CH1/

USART2_CTS

TIM2_CH2/TIM5_CH2/

USART2_RTS/

LCD_SEG0

TIM2_CH3/TIM5_CH3/

TIM9_CH1/

USART2_TX/LCD_SEG1

TIM2_CH3/TIM5_CH3/

TIM9_CH1/

USART2_TX/LCD_SEG1

ADC_IN12/

COMP1_INP

ADC_IN13/

COMP1_INP

WKUP1/RTC_TA

MP2/ADC_IN0/

COMP1_INP

ADC_IN1/

COMP1_INP/

OPAMP1_VINP

ADC_IN2/

COMP1_INP/

OPAMP1_VINM

ADC_IN2/

COMP1_INP

26 17 H7

27 18 K8

28 19

L8,

PA3

SS_4

DD_4

I/O TC

PA3

SS_4

DD_4

TIM2_CH4/TIM5_CH4/

TIM9_CH2/

USART2_RX/LCD_SEG2

ADC_IN3/

COMP1_INP/

OPAMP1_VOUT

40 J4 29 20 J7 PA4 I/O TC PA4

SPI1_NSS/SPI3_NSS/

I2S3_WS/

USART2_CK

ADC_IN4/

DAC_OUT1/

COMP1_INP

DS10002 Rev 10 39/136

Pin descriptions STM32L151xE STM32L152xE

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

49 K6

50 J7

51 E3

52 H3

53 K7

54 J8

55 J9

21 M8

22 H6

23 K7

28 M6

PA5

PA6

PA7

PB2

PF11

PF12

SS_6

DD_6

PF13

PF14

PF15

I/O TC

I/O FT

S -

I/O FT

PA5

PA6

PA7

M4 OPAMP2_VINM I TC

OPAMP2_

VINM

44 K5 33 24 L7 PC4 I/O FT PC4

25 M7

26 J6

27 K6

PC5

PB0

PB1

I/O FT

I/O TC

I/O FT

PC5

PB0

PB1

PB2/

BOOT1

PF11

PF12

SS_6

DD_6

PF13

PF14

PF15

TIM2_CH1_ETR/

SPI1_SCK

TIM3_CH1/TIM10_CH1/S

PI1_MISO/

LCD_SEG3

TIM3_CH2/TIM11_CH1/

SPI1_MOSI/

LCD_SEG4

TIM3_CH2/TIM11_CH1/

SPI1_MOSI/

LCD_SEG4

ADC_IN5/

DAC_OUT2/

COMP1_INP

ADC_IN6/

COMP1_INP/

OPAMP2_VINP

ADC_IN7/

COMP1_INP/

OPAMP2_VINM

ADC_IN7/

COMP1_INP

LCD_SEG22

LCD_SEG23

TIM3_CH3/LCD_SEG5

TIM3_CH4/LCD_SEG6

ADC_IN14/

COMP1_INP

ADC_IN15/

COMP1_INP

ADC_IN8/

COMP1_INP/

OPAMP2_VOUT/

VREF_OUT

ADC_IN9/

COMP1_INP/

VREF_OUT

ADC_IN0b BOOT1

ADC_IN1b

ADC_IN2b

ADC_IN3b

ADC_IN6b

ADC_IN7b

40/136 DS10002 Rev 10

STM32L151xE STM32L152xE Pin descriptions

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

56 H9

57 G9

58 M7 38 L6

59 L7 39 M5

60 M8 40 M4

63 L8 41 J5

64 M9 42 L5

65 L9 43 M3

66 M10 44 K5

67 M11 45 L4

68 M12 46 K4

69 L10 47 29 M2

70 L11 48 30 L3

71 F12 49 31

L2,

72 G12 50 32 K3

73 L12 51 33 J4

PB11

SS_1

DD_1

PB12

PG0

PG1

PE7

PE8

PE9

SS_7

DD_7

PE10

PE11

PE12

PE13

PE14

PE15

PB10

I/O FT

I/O TC

S -

I/O TC

I/O FT

PG0

PG1

PE7

PE8

PE9

SS_7

DD_7

PE10

PE11

PE12

PE13

PE14

PE15

PB10

PB11

SS_1

DD_1

PB12

TIM2_CH1_ETR

TIM2_CH2

TIM2_CH3

TIM2_CH4/SPI1_NSS

SPI1_SCK

SPI1_MISO

SPI1_MOSI

TIM2_CH3/I2C2_SCL/

USART3_TX/

LCD_SEG10

TIM2_CH4/I2C2_SDA/

USART3_RX/

LCD_SEG11

TIM10_CH1/I2C2_SMBA/

SPI2_NSS/I2S2_WS/

USART3_CK/

LCD_SEG12

ADC_IN8b

ADC_IN9b

ADC_IN22/

COMP1_INP

ADC_IN23/

COMP1_INP

ADC_IN24/

COMP1_INP

ADC_IN25/

COMP1_INP

ADC_IN18/

COMP1_INP

DS10002 Rev 10 41/136

Pin descriptions STM32L151xE STM32L152xE

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

K12

K11

34 J3

35 L1

76 K10 54 36 K2

77 K9 55 H4

78 K8 56 J2

79 J12 57 K1

80 J11 58 G4

81 J10 59 H3

82 H12 60 H2

83 -

84 -

85 H11 61 J1

86 H10 62 G3

87 G10 -

88 F9

89 F10 -

90 E9 -

PB13

PB14

PB15

PD8

PD9

PD10

PD11

PD12

PD13

SS_8

DD_8

PD14

PD15

PG2

PG3

PG4

PG5

PG6

PG7

PG8

I/O FT

S -

I/O FT

PD8

PD9

PD10

PD11

PB13

PB14

PB15

PD12

PD13

SS_8

DD_8

PD14

PD15

PG2

PG3

PG4

PG5

PG6

PG7

PG8

TIM9_CH1/SPI2_SCK/

I2S2_CK/

USART3_CTS/

LCD_SEG13

TIM9_CH2/SPI2_MISO/

USART3_RTS/

LCD_SEG14

TIM11_CH1/SPI2_MOSI/

I2S2_SD/

LCD_SEG15

USART3_TX/

LCD_SEG28

USART3_RX/

LCD_SEG29

USART3_CK/

LCD_SEG30

USART3_CTS/

LCD_SEG31

TIM4_CH1/

USART3_RTS/

LCD_SEG32

TIM4_CH2/LCD_SEG33

TIM4_CH3/LCD_SEG34

TIM4_CH4/LCD_SEG35

ADC_IN19/

COMP1_INP

ADC_IN20/

COMP1_INP

ADC_IN21/

COMP1_INP/

RTC_REFIN

ADC_IN10b

ADC_IN11b

ADC_IN12b

42/136 DS10002 Rev 10

STM32L151xE STM32L152xE Pin descriptions

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

94 F6

95 G6

96 E12 63 37 H1

97 E11 64 38 G1

98 E10 65 39 G2

99 D12 66 40 F4

100 D11 67 41 F3

101 D10 68 42 F1

102 C12 69 43 F2

103 B12 70 44 E1

104 A12 71 45 E2

105 A11 72 46 E3

106 C11 73 D1

107 F11 74 47

D2,

108 G11 75 48 C1

109 A10 76 49 D3

PA9

PA10

PA11

PA12

PA13

PH2

SS_2

DD_2

PA14

SS_9

DD_9

PC6

PC7

PC8

PC9

PA8

110 A9

111 B11

50 B1

51 E4

PA15

PC10

I/O FT

SS_9

DD_9

PC6

PC7

PC8

PC9

PA8

PA9

PA10

PA11

PA12

JTMS-

SWDIO

PH2

TIM3_CH1/I2S2_MCK/

LCD_SEG24

TIM3_CH2/I2S3_MCK/

LCD_SEG25

TIM3_CH3/LCD_SEG26

TIM3_CH4/LCD_SEG27

USART1_CK/MCO/

LCD_COM0

USART1_TX /

LCD_COM1

USART1_RX /

LCD_COM2

USART1_CTS/

SPI1_MISO

USART1_RTS/

SPI1_MOSI

JTMS-SWDIO

SS_2

DD_2

JTCK-

SWCLK

JTDI

PC10

JTCK-SWCLK

TIM2_CH1_ETR/

SPI1_NSS/SPI3_NSS/

I2S3_WS/LCD_SEG17/

JTDI

SPI3_SCK/I2S3_CK/

USART3_TX/ UART4_TX/

LCD_SEG28/

LCD_SEG40/LCD_COM4

USB_DM

USB_DP

DS10002 Rev 10 43/136

Pin descriptions STM32L151xE STM32L152xE

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

112 C10 79 52 C2

113 B10 80 53 B2

114 C9 81 A2

115 B9 82 D4

116 C8 83 54 C3

117 B8 84 C4

118 B7 85 A3

119 A6 86 B3

120 F7 -

121 G7 -

122 B6 87 B4

123 A5 88 A4

124 D9

125 D8

126 -

127 D7

128 C7

129 C6

130 -

131 -

PC11

PC12

PD0

PD1

PD2

PD3

PD4

PD5

SS_10

DD_10

PD6

PD7

PG9

PG10

PG11

PG12

PG13

PG14

SS_11

DD_11

I/O FT

S -

I/O FT

S -

I/O FT

PC11

PC12

PD0

PD1

PD2

PD3

PD4

PD5

SS_10

DD_10

PD6

PD7

PG9

PG10

PG11

PG12

PG13

PG14

SS_11

DD_11

SPI3_MISO/USART3_RX/

UART4_RX/

LCD_SEG29/

LCD_SEG41/LCD_COM5

SPI3_MOSI/I2S3_SD/

USART3_CK/

UART5_TX/LCD_SEG30/

LCD_SEG42/

LCD_COM6

TIM9_CH1/SPI2_NSS/

I2S2_WS

SPI2_SCK/I2S2_CK

TIM3_ETR/UART5_RX/

LCD_SEG31/

LCD_SEG43/LCD_COM7

SPI2_MISO/

USART2_CTS

SPI2_MOSI/I2S2_SD/

USART2_RTS

USART2_TX

USART2_RX

TIM9_CH2/USART2_CK

44/136 DS10002 Rev 10

STM32L151xE STM32L152xE Pin descriptions

Pins

Table 8. STM32L151xE and STM32L152xE pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

132

133

134

135

136

55 B5

56 A5

57 A6

58 C5

PG15

PB3

PB4

PB5

PB6

I/O FT

PG15

JTDO

NJTRST

PB5

PB6

TIM2_CH2/SPI1_SCK/

SPI3_SCK/ I2S3_CK/

LCD_SEG7/JTDO

TIM3_CH1/SPI1_MISO/

SPI3_MISO/

LCD_SEG8/NJTRST

TIM3_CH2/I2C1_SMBA/

SPI1_MOSI/

SPI3_MOSI/I2S3_SD/

LCD_SEG9

TIM4_CH1/I2C1_SCL/

USART1_TX

COMP2_INM

COMP2_INP

137

138

139

140

141

59 B6

60 A7

61 D5

62 C6

PB7

BOOT0

PB8

PB9

PE0

I/O FT

I B

I/O FT

PB7

BOOT0

PB8

PB9

PE0

TIM4_CH2/I2C1_SDA/

USART1_RX

TIM4_CH3/TIM10_CH1/

I2C1_SCL/

LCD_SEG16

TIM4_CH4/

TIM11_CH1/I2C1_SDA/

LCD_COM3

TIM4_ETR/TIM10_CH1/

LCD_SEG36

TIM11_CH1/LCD_SEG37

COMP2_INP/

PVD_IN

142 A2 98 A8

143 D3 99 63 C7

144 C4 100 64

B8,

PE1

SS_3

DD_3

I/O FT

PE1

SS_3

DD_3

1. I = input, O = output, S = supply.

2. Function availability depends on the chosen device.

3. Applicable to STM32L152xE devices only. In STM32L151xE devices, this pin should be connected to V

4. The PC14 and PC15 I/Os are only configured as OSC32_IN/OSC32_OUT when the LSE oscillator is ON (by setting the

LSEON bit in the RCC_CSR register). The LSE oscillator pins OSC32_IN/OSC32_OUT can be used as general-purpose

PH0/PH1 I/Os, respectively, when the LSE oscillator is off (after reset, the LSE oscillator is off). The LSE has priority over the GPIO function. For more details, refer to Using the OSC32_IN/OSC32_OUT pins as GPIO PC14/PC15 port pins section in the STM32L151xx, STM32L152xx and STM32L162xx reference manual (RM0038).

DS10002 Rev 10 45/136

Pin descriptions STM32L151xE STM32L152xE

5. The PH0 and PH1 I/Os are only configured as OSC_IN/OSC_OUT when the HSE oscillator is ON (by setting the HSEON bit in the RCC_CR register). The HSE oscillator pins OSC_IN/OSC_OUT can be used as general-purpose PH0/PH1 I/Os, respectively, when the HSE oscillator is off ( after reset, the HSE oscillator is off). The HSE has priority over the GPIO function.

46/136 DS10002 Rev 10

Alternate functions

Table 9. Alternate function input/output

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

BOOT0

NRST

PA0-WKUP1

PA1

PA2

PA3

PA4

PA5

PA6

PA7

PA8

PA9

PA10

SYSTEM

BOOT0 -

NRST -

TIM2_CH1_

ETR

TIM5_CH1 -

TIM2_CH2 TIM5_CH2

TIM2

TIM3/4/

TIM9/

10/11

TIM2_CH1_

ETR

TIM3_CH1 TIM10_CH1

Alternate function

I2C1/2

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

USART2_CTS -

USART2_RTS

USART2_TX

USART2_RX -

- TIMx_IC1

- SEG1 - TIMx_IC3

- SEG2 - TIMx_IC4

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

SPI1_NSS

SPI3_NSS

I2S3_WS

USART2_CK -

SPI1_SCK -

SPI1_MISO -

MCO -

TIM3_CH2 TIM11_CH1

SPI1_MOSI

USART1_TX -

USART1_RX -

- SEG3 - TIMx_IC3

- SEG4 - TIMx_IC4

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

PA11

PA12

PA13

PA14

PA15

PB0

PB1

PB2

PB3

PB4

PB5

PB6

PB7

PB8

Alternate function

SYSTEM

JTMS-

SWDIO

JTCK-

SWCLK

JTDI

BOOT1 -

TIM3_CH3 -

TIM3_CH4 -

JTDO TIM2_CH2 -

NJTRST -

TIM2

TIM2_CH1_

ETR

TIM3/4/

TIM9/

10/11

TIM3_CH2 -

TIM4_CH1 -

TIM4_CH2 -

I2C1/2

I2C1_

SMBA

TIM4_CH3 TIM10_CH1 I2C1_SCL

SPI1/2

SPI1_NSS

SPI3_NSS

I2S3_WS

I2C1_SCL -

I2C1_SDA -

SPI3

SPI1_MISO -

SPI1_MOSI -

I2S3_CK

SPI1_MOSI

SPI3_MOSI

I2S3_SD

USART1/2/

UART4/

LCD CPRI SYSTEM

USART1_CTS -

USART1_RTS -

USART1_TX -

USART1_RX -

- TIMx_IC4

- TIMx_IC1

- TIMx_IC2

- TIMx_IC3

- SEG17 - TIMx_IC4

- SEG7

- SEG9

- SEG16 -

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVEN

TOUT

EVEN

TOUT

EVEN

TOUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

PB9

PB10

PB11

PB12

PB13

PB14

PB15

PC0

PC1

PC2

PC3

PC4

PC5

PC6

SYSTEM

TIM2

Alternate function

TIM3/4/

TIM9/

10/11

I2C1/2

TIM4_CH4 TIM11_CH1 I2C1_SDA

SPI1/2

SPI3

TIM2_CH3 -

TIM2_CH4 -

TIM10_CH1

I2C2_SM

TIM9_CH1 -

SPI2_NSS

I2S2_WS

SPI2_SCK

I2S2_CK

TIM9_CH2 -

TIM11_CH1 -

SPI2_MISO -

SPI2_MOSI

I2S2_SD

TIM3_CH1 -

I2S2_MCK -

USART1/2/

UART4/

LCD CPRI SYSTEM

USART3_TX -

USART3_RX -

USART3_CK -

USART3_CTS -

USART3_RTS -

- COM3

- SEG15 -

- SEG18 - TIMx_IC1

- SEG19 - TIMx_IC2

- SEG20 - TIMx_IC3

- SEG21 - TIMx_IC4

- SEG22 - TIMx_IC1

- SEG23 - TIMx_IC2

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PC7

PC8

PC9

PC10

PC11

PC12

PC13-WKUP2

PC14

OSC32_IN

PC15

OSC32_OUT

PD0

PD1

PD2

PD3

AFIO0

AFIO1

SYSTEM TIM2

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Alternate function

TIM3/4/

TIM9/

10/11

TIM3_CH2 -

TIM3_CH3 -

TIM3_CH4 -

I2C1/2

TIM9_CH1 -

TIM3_ETR -

SPI1/2

SPI2_NSS

I2S2_WS

SPI2 SCK

I2S2_CK

SPI3

I2S3_MCK

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

SPI3_SCK

I2S3_CK

USART3_TX UART4_TX -

COM4/

SEG28/

SEG40

SPI3_MISO USART3_RX UART4_RX -

COM5/

SEG29

/SEG41

SPI3_MOSI

I2S3_SD

COM6/

SEG30/

SEG42

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

COM7/

UART5_RX

SEG43

- TIMx_IC3

EVENT

OUT

SPI2_MISO USART2_CTS -

PD7

PD8

PD9

PD10

PD11

PD12

PD13

PD14

PD15

PE0

PE1

Port name

PD4

PD5

PD6

AFIO0

SYSTEM TIM2

AFIO1

TIM3/4/

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI2_MOSI

I2S2_SD

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

USART2_RTS -

USART2_TX -

USART2_RX -

TIM4_CH1 -

TIM4_CH2 -

TIM9_CH2 -

TIM4_CH3 -

TIM4_CH4 -

TIM4_ETR TIM10_CH1

TIM11_CH1 -

USART2_CK -

USART3_TX -

USART3_RX -

USART3_CK -

USART3_CTS -

USART3_RTS -

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

- SEG36 - TIMx_IC1

EVENT

OUT

EVENT

OUT

PE12

PE13

PE14

PE15

PE3

PE4

PE5

PE6-

WKUP3

PE7

PE8

PE9

PE10

PE11

Port name

PE2

AFIO0 AFIO1

SYSTEM TIM2

TRACECK -

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM3/4/

AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

TRACED0 -

TRACED1 -

TRACED2 -

TRACED3 -

TIM2_CH1_

ETR

TIM2_CH2 -

TIM2_CH3 -

TIM2_CH4 -

TIM9_CH1 -

TIM9_CH2

SPI1_NSS -

SPI1_SCK -

SPI1_MISO -

SPI1_MOSI -

- TIMx_IC1

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

- TIMx_IC1

EVENT

OUT

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC4

EVENT

OUT

Port name

PF0

PF1

PF2

PF3

PF4

PF5

PF6

PF7

PF8

PF9

PF10

PF11

PF12

PF13

AFIO0

AFIO1

SYSTEM TIM2

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM3/4/

AFIO3

TIM9/

10/11

TIM5_ETR -

TIM5_CH2 -

TIM5_CH3 -

TIM5_CH4 -

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PF14

PF15

PG0

PG1

PG2

PG3

PG4

PG5

PG6

PG7

PG8

PG9

PG10

PG11

AFIO0 AFIO1

SYSTEM TIM2

TIM3/4/

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PG12

PG13

PG14

PG15

PH0OSC_IN

PH1OSC_OUT

PH2

AFIO0 AFIO1

SYSTEM TIM2

TIM3/4/

Table 9. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM9/

10/11

AFIO3

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Memory mapping STM32L151xE STM32L152xE

56/136

Figure 8. Memory map

0xFFFF FFFF

0xE010 0000

0xE000 0000

Cortex-M3 Internal

Peripherals

0xC000 0000

0xA000 0000

0x8000 0000

0x6000 0000

0x4000 0000

Peripherals

0x2000 0000

SRAM

0x0000 0000

Nonvolatile memory

Reserved

0x1FF8 009F

0x1FF8 0080

0x1FF8 0020

0x1FF8 0000

Option Bytes

Bank 2 reserved

Option Bytes

Bank 1 reserved

0x1FF0 2000

0x1FF0 1000

0x1FF0 0000 reserved

Bank 2

System memory

Bank 1 reserved

0x0808 4000

Data EEPROM

Bank 2

0x0808 2000

Data EEPROM

Bank 1

0x0808 0000

Flash memory

Bank 2

0x0804 0000

Flash memory

Bank 1

0x0800 0000

0x0000 0000

Aliased to Flash or system memory depending on

BOOT pins

0x4002 3C00

0x4002 3800

0x4002 3400

0x4002 3000

0x4002 2000

0x4002 1C00

0x4002 1800

0x4002 1400

0x4002 1000

0x4002 0C00

0x4002 0800

0x4002 0400

0x4002 0000

0x4001 3C00

0x4001 3800

0x4001 3400

0x4001 3000

0x4001 2C00

0x4001 2800

0x4002 67FF

0x4002 6400

0x4002 6000

0x4002 4000

APB memory space

DMA2

DMA1 reserved

Flash Interface

RCC reserved

CRC reserved

Port G

Port F

Port H

Port E

Port D

Port C

Port B

Port A reserved

USART1 reserved

SPI1 reserved

ADC

0x4001 2400

0x4001 1400

0x4001 1000

0x4001 0C00 reserved

TIM11

0x4001 0800

0x4001 0400

0x4001 0000

TIM10

TIM9

EXTI

SYSCFG reserved

0x4000 8000

0x4001 7C00

0x4000 7800

0x4000 7400

0x4000 7000

COMP + RI reserved

DAC1 & 2

PWR

0x4000 6400

0x4000 6000

0x4000 5C00

0x4000 5800

0x4000 5400

0x4000 5000

0x4000 4C00

0x4000 4800 reserved

512 byte USB

USB Registers

I2C2

I2C1

UART5

UART4

USART3

USART2

0x4000 4400

0x4000 4000

0x4000 3C00 reserved

SPI3

0x4000 3800

0x4000 3400

0x4000 3000

0x4000 2C00

0x4000 2800

0x4000 2400

0x4000 1C00

0x4000 1400

0x4000 1000

0x4000 0C00

0x4000 0800

0x4000 0400

0x4000 0000

SPI2 reserved

IWDG

WWDG

RTC

LCD reserved

TIM7

TIM6

TIM5

TIM4

TIM3

TIM2

MS33003V4

DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

6.1.1

Unless otherwise specified, all voltages are referenced to V

Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on

100% of the devices with an ambient temperature at T

A the selected temperature range).

= 25 °C and T

= T

A max (given by

Data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean ±3 σ ).

Unless otherwise specified, typical data are based on T

= 25 °C, V

1.65 V tested.

≤ V

= 3.6 V (for the

≤ 3.6 V voltage range). They are given only as design guidelines and are not

Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean ±2 σ )

Unless otherwise specified, all typical curves are given only as design guidelines and are not tested.

The loading conditions used for pin parameter measurement are shown in

Figure 9

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in

Figure 10 .

Figure 9. Pin loading conditions Figure 10. Pin input voltage

MCU pin MCU pin

C = 50 pF

IN ai17851c

DS10002 Rev 10 ai17852d

57/136

114

Electrical characteristics

6.1.6 Power supply scheme

STM32L151xE STM32L152xE

Figure 11. Power supply scheme

Standby-power circuitry

(LSE,RTC,Wake-up logic, RTC backup registers)

OUT

Logic Kernel logic

(CPU,

Digital &

Memories)

Regulator

GP I/Os

N × 100 nF +

1 × 4.7 μF

DDA

REF

DDA

REF+

100 nF

+ 1 μF

100 nF

+ 1 μF

REF-

SSA

N – number of

pairs

ADC/

DAC

Analog:

OSC,PLL,COMP,

….

MS32461V3

58/136 DS10002 Rev 10

STM32L151xE STM32L152xE

6.1.7 Optional LCD power supply scheme

Electrical characteristics

Figure 12. Optional LCD power supply scheme

VSEL

N x 100 nF

+ 1 x 10 μF

DD1/2/.../N

Step-up

Converter

Option 1

100 nF

LCD

Option 2

EXT

LCD

SS1/2/.../N

LCD

MS32462V2

1. Option 1: LCD power supply is provided by a dedicated VLCD supply source, VSEL switch is open.

2. Option 2: LCD power supply is provided by the internal step-up converter, VSEL switch is closed, an external capacitance is needed for correct behavior of this converter.

Figure 13. Current consumption measurement scheme

N x 100 nF

+1 x 10 μF

100 nF

+1 μF

N x V

LCD

DDA

REF+

REF-

SSA

MS33028V1

DS10002 Rev 10 59/136

114

Electrical characteristics STM32L151xE STM32L152xE

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in

Table 10: Voltage characteristics

Table 11: Current characteristics

, and

Table 12: Thermal characteristics may cause

permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Symbol

Table 10. Voltage characteristics

Ratings Min Max Unit

–V

External main supply voltage

(including V

DDA and V

)

(1)

Input voltage on five-volt tolerant pin

(2)

Input voltage on any other pin

| Δ V

DDx

| Variations between different V

DD power pins

SSX

− V

| Variations between all different ground pins

(3)

REF+

–V

DDA

ESD(HBM)

Allowed voltage difference for V

Electrostatic discharge voltage

(human body model)

REF+

> V

DDA

–0.3

− 0.3

see

4.0

+4.0

4.0

0.4

Section 6.3.11

1. All main power (V permitted range.

, V

DDA

) and ground (V

, V

SSA

) pins must always be connected to the external power supply, in the

2. V

maximum must always be respected. Refer to Table 11 for maximum allowed injected current values.

3. Include V

REF-

pin.

V mV

Symbol

Table 11. Current characteristics

Ratings Max.

Unit

VDD( Σ )

VSS( Σ )

(2)

VDD(PIN)

VSS(PIN)

Total current into sum of all V

DD_x

power lines (source)

Total current out of sum of all V

SS_x

Maximum current out of each VSS_x ground pin (sink)

(1)

ground lines (sink)

(1)

Maximum current into each V

DD_x

power pin (source)

(1)

100

-70

INJ(PIN)

(3)

Output current sunk by any I/O and control pin 25

Σ I

IO(PIN)

Output current sourced by any I/O and control pin

Total output current sunk by sum of all IOs and control pins

(2)

Total output current sourced by sum of all IOs and control pins

(2)

Injected current on five-volt tolerant I/O

(4)

, RST and B pins

Injected current on any other pin

(5)

Total injected current (sum of all I/O and control pins) (6)

- 25

-60

-5/+0

± 5 mA

Σ I

INJ(PIN)

± 25

1. All main power (V permitted range.

, V

DDA

) and ground (V

, V

SSA

) pins must always be connected to the external power supply, in the

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.

3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.17

60/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

4. Positive current injection is not possible on these I/Os. A negative injection is induced by V exceeded. Refer to

Table 10

for maximum allowed input voltage values.

. I

INJ(PIN)

must never be

5. A positive injection is induced by V exceeded. Refer to

> V

while a negative injection is induced by V < V

. I

INJ(PIN)

must never be

6. When several inputs are submitted to a current injection, the maximum negative injected currents (instantaneous values).

Σ I

INJ(PIN)

is the absolute sum of the positive and

Symbol

STG

Table 12. Thermal characteristics

Ratings

Storage temperature range

Maximum junction temperature

Value

–65 to +150

150

Unit

°C

6.3.1 General operating conditions

Symbol

Table 13. General operating conditions

Parameter Conditions Min Max f

HCLK f

PCLK1 f

PCLK2

DDA

(1)

Internal AHB clock frequency

Internal APB1 clock frequency

Internal APB2 clock frequency

Standard operating voltage

BOR detector disabled

BOR detector enabled, at power on

BOR detector disabled, after power on

1.65

1.8

1.65

3.6

Analog operating voltage

(ADC and DAC not used)

Analog operating voltage

(ADC or DAC used)

Must be the same voltage as

(2)

1.65

1.8

3.6

I/O input voltage

FT pins; 2.0 V ≤ V

-0.3

FT pins; V

< 2.0 V

BOOT0 pin

-0.3

Any other pin

UFBGA132 package

LQFP144 package

-0.3

5.5

5.25

(3)

5.5

(3)

+0.3

333

500

Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7

(4)

LQFP100 package

LQFP64 package -

465

435

WLCSP104 package 435

Ambient temperature for 6 suffix version Maximum power dissipation

(5)

–40 85

Ambient temperature for 7 suffix version Maximum power dissipation –40 105

Unit

MHz

V mW

°C

DS10002 Rev 10 61/136

114

Electrical characteristics STM32L151xE STM32L152xE

Symbol

Table 13. General operating conditions (continued)

Parameter Conditions Min Max Unit

T J Junction temperature range

6 suffix version

7 suffix version

–40

105

110

°C

1. When the ADC is used, refer to Table 55: ADC characteristics

2. It is recommended to power V

DDA

and V

can be tolerated during power-up .

from the same source. A maximum difference of 300 mV between V

and

3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.

4. If T is lower, higher P

on page 130

values are allowed as long as T

does not exceed T

max (see Table 71: Thermal characteristics

5. In low-power dissipation state, T

max (see

can be extended to -40°C to 105°C temperature range as long as T

Table 71: Thermal characteristics on page 130

does not exceed T

6.3.2 Embedded reset and power control block characteristics

The parameters given in the following table are derived from the tests performed under the

conditions summarized in Table 13

Symbol

Table 14. Embedded reset and power control block characteristics

Parameter Conditions Min Typ t

VDD

(1)

RSTTEMPO

(1)

POR/PDR

BOR0

BOR1

BOR2

rise time rate

fall time rate

Reset temporization

Power on/power down reset threshold

Brown-out reset threshold 0

Brown-out reset threshold 1

Brown-out reset threshold 2

BOR detector enabled

BOR detector disabled

BOR detector enabled

BOR detector disabled

rising, BOR enabled

rising, BOR disabled

(2)

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

1.67

1.69

1.87

1.96

2.22

2.31

0.4

1.3

1.7

1.76

1.93

2.03

2.30

2.41

0.7

1.5

1.74

1.8

1.97

2.07

3.3

1.6

1.65

2.35

2.44

Max Unit

∞

1000

∞

1000

µs/V ms

62/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Table 14. Embedded reset and power control block characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

BOR3

BOR4

PVD0

PVD1

PVD2

PVD3

PVD4

PVD5

PVD6 hyst

Brown-out reset threshold 3

Brown-out reset threshold 4

Programmable voltage detector threshold 0

PVD threshold 1

PVD threshold 2

PVD threshold 3

PVD threshold 4

PVD threshold 5

PVD threshold 6

Hysteresis voltage

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

BOR0 threshold

All BOR and PVD thresholds excepting BOR0

100 -

1. Guaranteed by characterization results.

2. Valid for device version without BOR at power up. See option “D” in Ordering information scheme for more details.

2.20

2.28

2.39

2.47

2.57

2.68

2.77

2.87

2.97

3.08

1.8

1.88

1.98

2.08

2.45

2.54

2.68

2.78

2.24

2.34

2.44

2.54

2.64

2.74

2.83

2.94

3.05

3.15

1.85

1.94

2.04

2.14

2.55

2.66

2.8

2.9

2.28

2.38

2.48

2.58

2.69

2.79

2.88

2.99

3.09

3.20

1.88

1.99

2.09

2.18

2.6

2.7

2.85

2.95

V mV

DS10002 Rev 10 63/136

114

Electrical characteristics STM32L151xE STM32L152xE

The parameters given in

Table 16 are based on characterization results, unless otherwise

specified.

Table 15. Embedded internal reference voltage calibration values

Calibration value name Description Memory address

VREFINT_CAL

Raw data acquired at temperature of 30 °C ±5 °C

DDA

= 3 V ±10 mV

0x1FF8 00F8 - 0x1FF8 00F9

Symbol

REFINT out

(1)

VREF_MEAS

REFINT

VREFINT

Coeff

(3)

Coeff

(3)

S_vrefint

ADC_BUF

Table 16. Embedded internal reference voltage

Parameter

Internal reference voltage

Internal reference current consumption

Internal reference startup time

Conditions

– 40 °C < T

Min Typ

< +110 °C 1.202 1.224

DDA

and V

REF+

REFINT

voltage during

factory measure

Accuracy of factory-measured V

REF value

(2)

Temperature coefficient

Including uncertainties due to ADC and

DDA

REF+

values

–40 °C < T

< +110 °C

Long-term stability 1000 hours, T= 25 °C

Voltage coefficient 3.0 V < V

DDA

< 3.6 V

ADC sampling time when reading the internal reference voltage

Startup time of reference voltage buffer for ADC

2.99

1.4

VREF_OUT

Consumption of reference voltage buffer for ADC

VREF_OUT output current

VREF_OUT output load

(4)

13.5

LPBUF

(3)

Consumption of reference voltage buffer for VREF_OUT and COMP

730

1/4 reference voltage

1/2 reference voltage

3/4 reference voltage -

1. Guaranteed by test in production.

2. The internal V

REF

value is individually measured in production and stored in dedicated EEPROM bytes.

3. Guaranteed by characterization results.

4. To guarantee less than 1% VREF_OUT deviation.

Max

1.242

2.3

3.01

±5

100

1000

Unit

µA ms

V mV ppm/°C ppm

2000 ppm/V

1200

µs

µA

µA pF nA

REFINT

64/136 DS10002 Rev 10

STM32L151xE STM32L152xE

6.3.4 Supply current characteristics

Electrical characteristics

The current consumption is a function of several parameters and factors such as the operating voltage, temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code.

The current consumption is measured as described in

Figure 13: Current consumption measurement scheme

All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to the Dhrystone 2.1 code, unless otherwise specified. The current consumption values are derived from tests performed under ambient temperature T

= 25 °C and V

supply voltage conditions summarized in

Table 13: General operating conditions , unless otherwise specified.

The MCU is placed under the following conditions:

• All I/O pins are configured in analog input mode

• All peripherals are disabled except when explicitly mentioned.

• The Flash memory access time, 64-bit access and prefetch is adjusted depending on f

HCLK

frequency and voltage range to provide the best CPU performance.

• When the peripherals are enabled f

APB1

= f

APB2

= f

AHB

• When PLL is ON, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or

HSE = 16 MHz (if HSE bypass mode is used).

• The HSE user clock applied to OSCI_IN input follows the characteristic specified in

Table 26: High-speed external user clock characteristics .

• For maximum current consumption V

= V

DDA

= 3.6 V is applied to all supply pins.

• For typical current consumption V

DD specified otherwise.

= V

DDA

= 3.0 V is applied to all supply pins if not

DS10002 Rev 10 65/136

114

Electrical characteristics STM32L151xE STM32L152xE

Table 17. Current consumption in Run mode, code with data processing running from

Flash

Symbol Parameter Conditions f

HCLK

Typ Max (1) Unit

Range 3, V

CORE

V VOS[1:0] = 11

=1.2

1 MHz 225

2 MHz 420

500

750

(Run from

Flash)

Supply current in

Run mode, code executed from Flash f

HSE

= f

HCLK

up to

16 MHz included, f

HSE above 16 MHz (PLL

ON)

= f

HCLK

(2)

HSI clock source

(16 MHz)

MSI clock, 65 kHz

MSI clock, 524 kHz

Range 2, V

V VOS[1:0] = 10

Range 1, V

CORE

V VOS[1:0] = 01

=1.5

=1.8

4 MHz 780 1200

4 MHz

32 MHz

0.98

8 MHz 1.85

16 MHz 3.6

8 MHz 2.2

16 MHz 4.4

8.6

1.6

2.9

5.2

3.5

6.5

Range 2, V

CORE

V VOS[1:0] = 10

=1.5

Range 1, V

CORE

V VOS[1:0] = 01

=1.8

16 MHz

32 MHz

3.6

8.7

5.2

12.3

65 kHz 42

Range 3, V

CORE

V VOS[1:0] = 11

=1.2

524 kHz 135

145

250

4.2 MHz 820 1200 MSI clock, 4.2 MHz

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

µA mA

µA

66/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Table 18. Current consumption in Run mode, code with data processing running from

RAM

Symbol Parameter Conditions f

HCLK

Typ Max (1) Unit

(Run from

RAM)

Range 3,

CORE

=1.2 V

VOS[1:0] = 11 f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz

(PLL ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Supply current in Run mode, code executed from RAM,

Flash switched off

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

1.6

3.1

1.9

3.7

32 MHz 7.55

200

360

470

780

685 1200

0.80

1.5

3.5

5.55

10.9

16 MHz 3.15

32 MHz 7.75

65 kHz 40

524 kHz 115

4.2 MHz 715

4.8

11.7

130

215

1100

µA mA

µA

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

DS10002 Rev 10 67/136

114

Electrical characteristics STM32L151xE STM32L152xE

Symbol

(Sleep)

Parameter

Supply current in Sleep mode, Flash

OFF

Table 19. Current consumption in Sleep mode

Conditions f

HCLK

Range 3,

CORE

=1.2 V

VOS[1:0] = 11 f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz (PLL

ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

32 MHz

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

16 MHz

32 MHz

Typ

330

625

395

760

1700

140

175

670

1750

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

Supply current in Sleep mode, Flash

ON f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz (PLL

ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

65 kHz

524 kHz

4.2 MHz

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

32 MHz

155

190

340

640

410

770

1750

150

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

Supply current in Sleep mode, Flash

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2V

VOS[1:0] = 11

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register)

16 MHz

32 MHz

65 kHz

524 kHz

4.2 MHz

690

1750

160

2800

105

125

290

µA

2700

380

500

700

1120

800

1300

2700

110

273

250

300

1160

Max

(1)

700

1100

800

1250

2700

220

300

380

500

1100

Unit

68/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Symbol Parameter

Table 20. Current consumption in Low-power run mode

Conditions Typ

DD (LP

Run)

Supply current in

Low-power run mode

All peripherals

OFF, code executed from RAM,

Flash switched

OFF, V

DD to 3.6 V

All executed

from

1.65 V to

3.6 V from 1.65 V peripherals

OFF, code from Flash, f f f f f f

MSI clock, 65 kHz

HCLK

MSI clock, 65 kHz

HCLK

= 32 kHz

MSI clock, 65 kHz

= 65 kHz

= 131 kHz

MSI clock, 65 kHz

= 32 kHz

= 65 kHz

= 131 kHz

MSI clock, 131 kHz

max

(LP Run)

Max allowed current in

Low-power run mode

from

1.65 V to

3.6 V

1. Guaranteed by characterization results, unless otherwise specified.

= -40 °C to 25 °C

= 85 °C

= 105 °C

=-40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

55.7

86.6

53.2

92.1

41.9

72.1

36.1

36.2

65.4

16.5

60.2

95.6

48.5

54.7

76.1

112

Max

(1)

125

40.5

120

108

102

130

140

Unit

µA

200

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Electrical characteristics STM32L151xE STM32L152xE

Table 21. Current consumption in Low-power sleep mode

Symbol Parameter Conditions Typ

(LP Sleep)

Supply current in

Low-power sleep mode

All peripherals

OFF, V

1.65 V to 3.6 V

TIM9 and

USART1

from enabled, Flash

ON, V

from

1.65 V to 3.6 V f

MSI clock, 65 kHz

HCLK

= 32 kHz

Flash OFF

= -40 °C to 25 °C 5.5

f f f f

MSI clock, 65 kHz

HCLK

Flash ON

MSI clock, 65 kHz

HCLK

= 32 kHz

= 65 kHz,

Flash ON

MSI clock, 65 kHz

= 32 kHz

MSI clock, 65 kHz

HCLK

= 65 kHz f

MSI clock, 131 kHz

HCLK

= 131 kHz,

Flash ON f

MSI clock, 131 kHz

HCLK

= 131 kHz

= -40 °C to 25 °C 18.5

= 85 °C

= 105 °C

26.8

= -40 °C to 25 °C 18.5

= 85 °C 27.2

= 105 °C 37.3

= -40 °C to 25 °C 21.5

= 55 °C

= 85 °C

23.7

29.8

= 105 °C 39.7

= -40 °C to 25 °C 18.5

= 85 °C

= 105 °C

26.8

38.3

= -40 °C to 25 °C 18.5

= 85 °C 27.2

= 105 °C 38.5

= -40 °C to 25 °C 21.5

= 55 °C

= 85 °C

23.7

29.8

= 105 °C 41.2

max

(LP Sleep)

Max allowed current in

Low-power sleep mode

from 1.65 V to 3.6 V

1. Guaranteed by characterization results, unless otherwise specified.

Max

(1)

Unit

200

µA

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STM32L151xE STM32L152xE Electrical characteristics

Symbol

(Stop with RTC)

Table 22. Typical and maximum current consumptions in Stop mode

Parameter Conditions Typ Max (1) Unit

Supply current in

Stop mode with RTC enabled

RTC clocked by LSI or LSE external clock

(32.768kHz), regulator in LP mode,

HSI and HSE OFF

(no independent watchdog)

RTC clocked by LSE external quartz

(32.768kHz), regulator in LP mode,

HSI and HSE OFF

(no independent watchdog

(4)

LCD

OFF

LCD

OFF

= -40°C to 25°C

= 1.8 V

= -40°C to 25°C

= 55°C

LCD

(static duty)

(2)

LCD

ON (1/8 duty)

(3)

= 85°C

= 105°C

= -40°C to 25°C

= 55°C

= 85°C

= 105°C

= -40°C to 25°C

= 55°C

= 85°C

= 105°C

1.18

1.4

3.02

7.44

15.5

1.5

4.65

9.07

15.6

3.9

5.19

9.8

18.4

= -40°C to 25°C 1.65

= 55°C 3.32

LCD

(static duty)

(2)

= 85°C

= 105°C

= -40°C to 25°C 1.75

= 55°C 4.9

= 85°C

= 105°C

7.83

9.41

15.8

LCD

ON (1/8 duty)

(3)

= -40°C to 25°C

= 55°C

LCD

OFF

= 85°C

= 105°C

= -40°C to 25°C

= 1.8V

= -40°C to 25°C

= 3.0V

= -40°C to 25°C

= 3.6V

4.1

5.53

18.5

1.33

1.62

1.87

µA

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Electrical characteristics STM32L151xE STM32L152xE

Table 22. Typical and maximum current consumptions in Stop mode (continued)

Symbol Parameter Conditions Typ Max (1) Unit

(Stop)

(WU from

Stop)

Regulator in LP mode, HSI and

HSE OFF, independent watchdog and LSI enabled

= -40°C to 25°C 1.8

Supply current in

Stop mode (RTC disabled)

Regulator in LP mode, LSI, HSI and HSE OFF (no independent watchdog)

= -40°C to 25°C 0.560

= 55°C

= 85°C

2.18

6.6

= 105°C 14.9

MSI = 4.2 MHz 2

Supply current during wakeup from Stop mode

MSI = 1.05 MHz

MSI = 65 kHz

(5)

= -40°C to 25°C 1.45

1.45

2.2

1.5

µA mA

1. Guaranteed by characterization results, unless otherwise specified.

2. LCD enabled with external VLCD, static duty, division ratio = 256, all pixels active, no LCD connected.

3. LCD enabled with external VLCD, 1/8 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.

4. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

5. When MSI = 64 kHz, the RMS current is measured over the first 15 µs following the wakeup event. For the remaining part of the wakeup period, the current corresponds the Run mode current.

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STM32L151xE STM32L152xE Electrical characteristics

Symbol

Table 23. Typical and maximum current consumptions in Standby mode

Parameter Conditions Typ Max (1) Unit

(Standby with RTC)

(Standby)

(WU from

Standby)

Supply current in

Standby mode with RTC enabled

= -40 °C to 25 °C

= 1.8 V

RTC clocked by LSI (no independent watchdog)

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 1.8 V

RTC clocked by LSE external quartz (no independent watchdog)

(3)

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

Independent watchdog and LSI enabled

= -40 °C to 25 °C

Supply current in

Standby mode (RTC disabled)

Independent watchdog and LSI OFF

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

Supply current during wakeup time from

Standby mode

= -40 °C to 25 °C

0.865

0.29

0.96

1.38

1.98

1.11

1.72

2.12

2.54

0.97

1.28

2.01

2.5

2.98

1.3

(2)

1.9

2.2

8.3

(2)

1.7

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8pF loading capacitors.

µA mA

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the following table. The MCU is placed under the following conditions:

• all I/O pins are in input mode with a static value at V

or V

(no load)

• all peripherals are disabled unless otherwise mentioned

• the given value is calculated by measuring the current consumption

– with all peripherals clocked off

– with only one peripheral clocked on

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114

Electrical characteristics

APB1

Peripheral

USART4

USART5

I2C1

I2C2

USB

PWR

DAC

COMP

TIM2

TIM3

TIM4

TIM5

TIM6

TIM7

LCD

WWDG

SPI2

SPI3

USART2

USART3

STM32L151xE STM32L152xE

Table 24. Peripheral current consumption (1)

Typical consumption, V

= 3.0 V, T

= 25 °C

Range 1,

CORE

1.8 V

VOS[1:0] = 01

Range 2,

CORE

1.5 V

VOS[1:0] = 10

Range 3,

CORE

1.2 V

VOS[1:0] = 11

Low-power sleep and run

7.3

7.6

7.3

7.2

13.0

2.6

5.9

3.9

3.8

4.2

2.9

5.4

12.0

10.5

10.4

13.8

5.5

7.6

6.1

6.3

6.1

5.9

11.2

2.3

5.0

3.3

3.0

3.3

3.6

2.5

4.4

10.0

8.8

11.5

4.6

6.2

4.7

8.9

1.9

4.0

2.6

4.8

5.0

4.8

2.5

2.6

2.8

2.1

3.5

3.7

4.9

5.0

8.0

7.0

9.1

6.1

6.3

6.1

5.9

11.2

2.3

5.0

3.3

3.0

3.3

3.6

2.5

4.4

10.0

8.8

11.5

4.6

6.2

Unit

µA/MHz

HCLK

)

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STM32L151xE STM32L152xE Electrical characteristics

Table 24. Peripheral current consumption (1) (continued)

Typical consumption, V

= 3.0 V, T

= 25 °C

Peripheral

Range 1,

CORE

1.8 V

VOS[1:0] = 01

Range 2,

CORE

1.5 V

VOS[1:0] = 10

Range 3,

CORE

1.2 V

VOS[1:0] = 11

Low-power sleep and run

Unit

APB2

SYSCFG & RI

TIM9

TIM10

TIM11

ADC

(2)

SPI1

USART1

GPIOA

GPIOB

GPIOC

GPIOD

GPIOE

9.5

4.8

8.2

6.3

8.1

6.7

2.9

8.2

6.2

7.9

3.9

6.9

5.3

5.2

6.8

5.7

2.4

6.9

5.1

6.2

3.2

5.4

4.1

5.4

4.5

2.0

5.5

4.1

7.9

3.9

6.9

5.3

5.2

6.8

5.7

2.4

6.9

5.1

AHB

GPIOF

GPIOG

GPIOH

5.9

7.2

1.7

4.9

6.1

1.4

3.9

4.9

1.1

4.9

6.1

1.4

µA/MHz

HCLK

)

CRC

FLASH

DMA1

0.8

21.6

16.8

0.7

18.1

14.5

0.5

16.0

11.5

0.7

(3)

14.5

All enabled

DMA2 15.7

222

13.6

184

10.8

160

13.6

165.9

DD (RTC)

DD (LCD)

DD (ADC)

(4)

DD (DAC)

(5)

DD (COMP1)

0.4

3.1

1450

340

0.16

µA

Slow mode 2

DD (COMP2)

Fast mode 5

DD (PVD / BOR)

(6)

DD (IWDG)

2.6

0.25

1. Data based on differential I following conditions: f power run/sleep), f = f

measurement between all peripherals OFF an one peripheral with clock enabled, in the

= 32 MHz (range 1), f

HCLK

, f

APB2

= f

HCLK

= 16 MHz (range 2), f

HCLK

= 4 MHz (range 3), f

HCLK

= 64kHz (Low-

, default prescaler value for each peripheral. The CPU is in Sleep mode in

2. HSI oscillator is OFF for this measure.

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Electrical characteristics STM32L151xE STM32L152xE

3. In Low-power sleep and run mode, the Flash memory must always be in power-down mode.

4. Data based on a differential I

DD measurement between ADC in reset configuration and continuous ADC conversion (HSI consumption not included).

5. Data based on a differential I

DD measurement between DAC in reset configuration and continuous DAC conversion of

/2. DAC is in buffered mode, output is left floating.

6. Including supply current of internal reference voltage.

6.3.5 Wakeup time from low-power mode

The wakeup times given in the following table are measured with the MSI RC oscillator. The clock source used to wake up the device depends on the current operating mode:

• Sleep mode: the clock source is the clock that was set before entering Sleep mode

• Stop mode: the clock source is the MSI oscillator in the range configured before entering Stop mode

• Standby mode: the clock source is the MSI oscillator running at 2.1 MHz

All timings are derived from tests performed under the conditions summarized in

Table 13 .

Symbol

Table 25. Low-power mode wakeup timings

Parameter Conditions Typ Max (1) Unit t t

WUSLEEP

WUSLEEP_LP

Wakeup from Sleep mode

Wakeup from Low-power sleep mode, f

HCLK

= 262 kHz f

HCLK

= 32 MHz f

HCLK

= 262 kHz

Flash enabled f

HCLK

= 262 kHz

Flash switched OFF

0.4

46 -

Wakeup from Stop mode, regulator in Run mode

ULP bit = 1 and FWU bit = 1 f

HCLK

= f

MSI

= 4.2 MHz 8.2

WUSTOP

Wakeup from Stop mode, regulator in low-power mode

ULP bit = 1 and FWU bit = 1 f

HCLK

= f

MSI

= 4.2 MHz

Voltage range 1 and 2 f

HCLK

= f

MSI

= 4.2 MHz

Voltage range 3

7.7

8.2

8.9

13.1

f f

HCLK

= f

MSI

= 2.1 MHz 10.2

HCLK

= f

MSI

= 1.05 MHz 16

HCLK

= f

MSI

= 524 kHz f

HCLK

= f

MSI

= 262 kHz

13.4

66 f

HCLK

= f

MSI

= 131 kHz f

HCLK

= MSI = 65 kHz

112

221

123

236 t

WUSTDBY

Wakeup from Standby mode

ULP bit = 1 and FWU bit = 1

Wakeup from Standby mode

FWU bit = 0 f f

HCLK

1. Guaranteed by characterization, unless otherwise specified

= MSI = 2.1 MHz

2.6

104

3.25

µs ms

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High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.The

external clock signal has to respect the I/O characteristics in Section 6.3.12

. However, the

Symbol f

HSE_ext

Table 26. High-speed external user clock characteristics (1)

Parameter Conditions Min Typ Max Unit

User external clock source frequency

CSS is on or

PLL is used

CSS is off, PLL not used

MHz

HSEH

HSEL t w(HSEH) t w(HSEL) t r(HSE) t f(HSE)

C in(HSE)

OSC_IN input pin high level voltage

OSC_IN input pin low level voltage

OSC_IN high or low time

OSC_IN rise or fall time

OSC_IN input capacitance

1. Guaranteed by design.

0.7V

2.6

0.3V

V ns pF

Figure 14. High-speed external clock source AC timing diagram tw(HSEH)

VHSEH

VHSEL

90%

10% tr(HSE)

THSE tf(HSE) tw(HSEL) t

MS19214V2

DS10002 Rev 10 77/136

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Electrical characteristics STM32L151xE STM32L152xE

Low-speed external user clock generated from an external source

The characteristics given in the following table result from tests performed using a low-

speed external clock source, and under the conditions summarized in Table 13

Symbol

Table 27. Low-speed external user clock characteristics (1)

Parameter f

LSE_ext

LSEH

User external clock source frequency

OSC32_IN input pin high level voltage

LSEL

OSC32_IN input pin low level voltage t w(LSEH) t w(LSEL) t r(LSE) t f(LSE)

IN(LSE)

OSC32_IN high or low time

OSC32_IN rise or fall time

OSC32_IN input capacitance

1. Guaranteed by design.

Conditions

Min

0.7V

465

Typ

32.768

0.6

Max Unit

1000 kHz

0.3V

V ns pF

Figure 15. Low-speed external clock source AC timing diagram tw(LSEH)

VLSEH

VLSEL

90%

10% tr(LSE) tw(LSEL) t

TLSE tf(LSE)

MS19215V2

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 1 to 24 MHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in

Table 28 . In

the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy).

78/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Symbol

Table 28. HSE oscillator characteristics (1)(2)

Parameter Conditions Min Typ Max Unit f

OSC_IN

Oscillator frequency

Feedback resistor

200

MHz k Ω

Recommended load capacitance versus equivalent serial resistance of the crystal

)

(3)

= 30 Ω 20 pF

HSE

HSE driving current V

= 3.3 V,

= V

SS with 30 pF load

3 mA

C = 20 pF f

OSC

= 16 MHz

2.5 (startup)

0.7 (stabilized)

DD(HSE)

HSE oscillator power consumption

2.5 (startup)

0.46 (stabilized) mA

C = 10 pF f

OSC

= 16 MHz g m

Oscillator transconductance

Startup 3.5

mA /V t

SU(HSE)

(4)

Startup time V

is stabilized 1 ms

1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.

2. Guaranteed by characterization results.

3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a humid environment, due to the induced leakage and the bias condition change. However, it is recommended to take this point into account if the MCU is used in tough humidity conditions.

4. t

SU(HSE)

is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

For C

and C

, it is recommended to use high-quality external ceramic capacitors in the

5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match

the requirements of the crystal or resonator (see Figure 16

). C

and C

L2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of C

and C

. PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing

and C

. Refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com

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Electrical characteristics STM32L151xE STM32L152xE

Figure 16. HSE oscillator circuit diagram

L1 f

HSE

to core

R m

L m

C m

Resonator

OSC_IN

F g m

Consumption control

Resonator

STM32

OSC_OUT

L2 ai18235b

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in

Table 29 . In

Symbol

Table 29. LSE oscillator characteristics (f

LSE

= 32.768 kHz) (1)

Parameter Conditions Min Typ Max Unit f

LSE

Low speed external oscillator frequency

32.768

kHz

Feedback resistor 1.2

M Ω

(2)

Recommended load capacitance versus equivalent serial resistance of the crystal (R

)

(3)

LSE driving current

= 30 k Ω 8 pF

LSE

DD (LSE)

LSE oscillator current consumption

= 3.3 V, V

= V

= 1.8 V

= 3.0 V

= 3.6V

450

600

750

1.1

µA nA g m t

SU(LSE)

(4)

Oscillator transconductance

Startup time V

is stabilized

1 -

µA/V

1. Guaranteed by characterization results.

2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”.

3. The oscillator selection can be optimized in terms of supply current using an high quality resonator with small R

value for example MSIV-TIN32.768kHz. Refer to crystal manufacturer for more details.

4. t

SU(LSE)

is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

80/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Note: For C

and C

, it is recommended to use high-quality ceramic capacitors in the 5 pF to

15 pF range selected to match the requirements of the crystal or resonator (see Figure 17 ).

and C

L2, are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of C

Load capacitance C

has the following formula: C

C stray between 2 pF and 7 pF.

and C

= C

x C

/ ( C

+ C

) + C stray

where

is the pin capacitance and board or trace PCB-related capacitance. Typically, it is

Caution: To avoid exceeding the maximum value of C

L1 to use a resonator with a load capacitance C

and C

(15 pF) it is strongly recommended

≤ 7 pF. Never use a resonator with a load capacitance of 12.5 pF.

Example: if the user chooses a resonator with a load capacitance of C

= 6 pF and

C stray

= 2 pF, then C

= C

= 8 pF.

Figure 17. Typical application with a 32.768 kHz crystal

Resonator with integrated capacitors

CL1

32.768 kH z resonator

OSC32_IN

Bias controlled gain

OSC32_OU T

CL2 f

LSE

STM32L1xx ai17853b

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Electrical characteristics

6.3.7 Internal clock source characteristics

STM32L151xE STM32L152xE

The parameters given in

Table 30 are derived from tests performed under the conditions

summarized in

Table 13 .

High-speed internal (HSI) RC oscillator

Symbol

Table 30. HSI oscillator characteristics

Parameter Conditions Min Typ Max Unit f

HSI

TRIM

(1)(2)

ACC

HSI

(2)

Frequency

HSI user-trimmed resolution

Accuracy of the factory-calibrated

HSI oscillator

= 3.0 V

Trimming code is not a multiple of 16

Trimming code is a multiple of 16

DDA

= 3.0 V, T

= 25 °C

DDA

= 3.0 V, T

= 0 to 55 °C

DDA

= 3.0 V, T

= -10 to 70 °C

DDA

= 3.0 V, T

= -10 to 85 °C

DDA

= 3.0 V, T

= -10 to 105 °C

DDA

= 1.65 V to 3.6 V

= -40 to 105 °C

-1

(3)

-1.5

-2

-2.5

-4

± 0.4

0.7

± 1.5

1 (3) %

1.5

MHz

I t

SU(HSI)

(2)

DD(HSI)

(2)

HSI oscillator startup time

HSI oscillator power consumption

3.7

100

140

1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

2. Guaranteed by characterization results.

3. Guaranteed by test in production.

µs

µA

Low-speed internal (LSI) RC oscillator

Table 31. LSI oscillator characteristics

Symbol Parameter Min Typ f

LSI

(1)

LSI frequency 26 38

LSI

(2) t su(LSI)

(3)

DD(LSI)

(3)

LSI oscillator frequency drift

0°C ≤ T

≤ 105°C

LSI oscillator startup time

LSI oscillator power consumption

-10

400

1. Guaranteed by test in production.

2. This is a deviation for an individual part, once the initial frequency has been measured.

3. Guaranteed by design.

Max

200

510

Unit kHz

µs nA

82/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Multi-speed internal (MSI) RC oscillator

Symbol f

MSI

Table 32. MSI oscillator characteristics

Parameter Condition

Frequency after factory calibration, done at

= 3.3 V and T

= 25 °C

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6

ACC

MSI

Frequency error after factory calibration

TEMP(MSI)

(1)

VOLT(MSI)

(1)

MSI oscillator frequency drift

0 °C ≤ T

≤ 105 °C

MSI oscillator frequency drift

1.65 V ≤ V

≤ 3.6 V, T

= 25 °C

DD(MSI)

(2) t

SU(MSI)

MSI oscillator power consumption

MSI oscillator startup time

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6,

Voltage range 1 and 2

MSI range 6,

Voltage range 3

Typ

65.5

131

262

524

1.05

2.1

4.2

± 0.5

± 3

0.75

1.5

2.5

4.5

3.5

Max Unit

kHz

MHz

2.5

%/V

µA

µs

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114

Electrical characteristics STM32L151xE STM32L152xE

Symbol

Table 32. MSI oscillator characteristics (continued)

Parameter Condition t

STAB(MSI)

(2) f

OVER(MSI)

MSI oscillator stabilization time

MSI oscillator frequency overshoot

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6,

Voltage range 1 and 2

MSI range 3,

Voltage range 3

Any range to range 5

Any range to range 6

1. This is a deviation for an individual part, once the initial frequency has been measured.

2. Guaranteed by characterization results.

Typ

Max Unit

2.5

µs

MHz

84/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

The parameters given in

Table 33 are derived from tests performed under the conditions

summarized in

Table 13 .

Table 33. PLL characteristics

Value

Symbol Parameter Unit

Min Typ Max (1) f

PLL_IN

PLL input clock

(2)

PLL input clock duty cycle

45 -

MHz

% t f

PLL_OUT

LOCK

PLL output clock

PLL lock time

PLL input = 16 MHz

PLL VCO = 96 MHz

115

160

MHz

µs

Jitter

DDA

(PLL)

Cycle-to-cycle jitter

Current consumption on V

DDA

Current consumption on V

220

120

± 600

450

150 ps

µA

1. Guaranteed by characterization results.

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by f

PLL_OUT

The characteristics are given at T

= -40 to 105 °C unless otherwise specified.

RAM memory

Table 34. RAM and hardware registers

Symbol Parameter

VRM Data retention mode

(1)

Conditions

STOP mode (or RESET)

Min

1.65

Typ Max Unit

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode).

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Electrical characteristics STM32L151xE STM32L152xE

Flash memory and data EEPROM

Symbol

Table 35. Flash memory and data EEPROM characteristics

Parameter Conditions t

DD prog

Operating voltage

Read / Write / Erase

Programming/ erasing time for byte / word / double word / half-page

Erasing

Programming

Average current during the whole programming / erase operation

Maximum current (peak) during the whole programming / erase operation

= 25 °C, V

= 3.6 V

1. Guaranteed by design.

Min

1.65

Typ Max

(1)

3.28

600

1.5

3.6

3.94

2.5

Unit

V ms

µA mA

Symbol

Table 36. Flash memory and data EEPROM endurance and retention

Value

Parameter Conditions

Min

(1)

Typ Max

CYC

(2)

Cycling (erase / write)

Program memory

Cycling (erase / write)

EEPROM data memory

= -40°C to

105 °C t

RET

(2)

Data retention (program memory) after

10 kcycles at T

= 85 °C

Data retention (EEPROM data memory) after 300 kcycles at T

= 85 °C

Data retention (program memory) after

10 kcycles at T

= 105 °C

Data retention (EEPROM data memory) after 300 kcycles at T

= 105 °C

RET

= +85 °C

RET

= +105 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

300

10 -

Unit kcycles years

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STM32L151xE STM32L152xE Electrical characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:

• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

• FTB : A Burst of Fast Transient voltage (positive and negative) is applied to V

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.

and

A device reset allows normal operations to be resumed.

The test results are given in Table 37

. They are based on the EMS levels and classes defined in application note AN1709.

Table 37. EMS characteristics

Symbol

FESD

EFTB

Parameter Conditions

Level/

Class

Voltage limits to be applied on any I/O pin to induce a functional disturbance

Fast transient voltage burst limits to be applied through 100 pF on V

and V pins to induce a functional disturbance

= f

HCLK

3.3 V, LQFP144, T

= 32 MHz

= +25 °C, conforms to IEC 61000-4-2

= f

HCLK

3.3 V, LQFP144, T

= 32 MHz

= +25 °C, conforms to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It must be noted that good EMC performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

• Corrupted program counter

• Unexpected reset

• Critical data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1 second.

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Electrical characteristics STM32L151xE STM32L152xE

To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Symbol Parameter

EMI

Table 38. EMI characteristics

Max vs. frequency range

Conditions

Monitored frequency band

4 MHz voltage range 3

16 MHz voltage range 2

32 MHz voltage range 1

Unit

Peak level

= 3.6 V,

= 25 °C,

LQFP144 package compliant with IEC

61967-2

0.1 to 30 MHz

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

-14

-11

-7

-6

-1

-4

2.5

dBµV

88/136

Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114, ANSI/ESD STM5.3.1. standard.

Symbol

Table 39. ESD absolute maximum ratings

Ratings Conditions Class

Maximum value

(1)

Unit

ESD(HBM)

Electrostatic discharge voltage

(human body model)

= +25 °C, conforming to JESD22-A114

ESD(CDM)

Electrostatic discharge voltage

(charge device model)

= +25 °C, conforming to ANSI/ESD STM5.3.1.

LQFP144 and

WLCSP104 packages packages except

LQFP144 and

WLCSP104

1. Guaranteed by characterization results.

2000

250

500

DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up performance:

• A supply overvoltage is applied to each power supply pin

• A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Symbol

Parameter

Table 40. Electrical sensitivities

Conditions

Static latch-up class T

= +105 °C conforming to JESD78A

Class

II level A

As a general rule, current injection to the I/O pins, due to external voltage below V

SS above V

DD in order to give an indication of the robustness of the microcontroller in cases when

(for standard pins) must be avoided during normal product operation. However, abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset occurrence oscillator frequency deviation, LCD levels).

The test results are given in the Table 41

Symbol

INJ

Table 41. I/O current injection susceptibility

Functional susceptibility

Description

Injected current on all 5 V tolerant (FT) pins

Injected current on BOOT0

Injected current on any other pin

Negative injection

-5

(1)

-0

-5

(1)

Positive injection

(2)

1. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.

2. Injection is not possible.

Unit mA

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Electrical characteristics STM32L151xE STM32L152xE

General input/output characteristics

Unless otherwise specified, the parameters given in

Table 48 are derived from tests

performed under the conditions summarized in Table 13

. All I/Os are CMOS and TTL compliant.

Symbol

IH hys lkg

Parameter

Input low level voltage

Input high level voltage hysteresis (2)

Input leakage current

(4)

Table 42. I/O static characteristics

I/O Schmitt trigger voltage

Conditions Min

TC and FT I/O

BOOT0

TC I/O

FT I/O

BOOT0

TC and FT I/O

BOOT0

≤ V

I/Os with LCD

≤ V

I/Os with analog switches

≤ V

I/Os with analog switches and LCD

≤ V

I/Os with USB

0.45 V

+0.38

(2)

0.39 V

+0.59

(2)

0.15 V

+0.56

(2)

Typ

10% V

(3)

0.01

Max

0.3 V

(1)(2)

0.14 V

(2)

±50

±250

≤ V

TC and FT I/Os

FT I/O

≤ V

≤ 5V

±50

±10

Weak pull-up equivalent resistor

(5)(1)

Weak pull-down equivalent resistor

(5)

I/O pin capacitance 5 -

1. Guaranteed by test in production.

2. Guaranteed by design.

3. With a minimum of 200 mV.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order).

Unit

V nA

µA k Ω k Ω pF

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STM32L151xE STM32L152xE Electrical characteristics

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ±20 mA with the non-standard V

specifications given in Table 43

In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in

Section 6.2

• The sum of the currents sourced by all the I/Os on V

DD,

I consumption of the MCU sourced on V

DD,

VDD( Σ )

(see

Table 11

). plus the maximum Run cannot exceed the absolute maximum rating

• The sum of the currents sunk by all the I/Os on V

I consumption of the MCU sunk on V

VSS( Σ )

(see Table 11 ).

plus the maximum Run

cannot exceed the absolute maximum rating

Output voltage levels

Unless otherwise specified, the parameters given in

Table 43 are derived from tests

performed under the conditions summarized in Table 13

. All I/Os are CMOS and TTL compliant.

Symbol

Table 43. Output voltage characteristics

Parameter Conditions Min Max Unit

(1)(2)

(2)(3)

(3)(4)

(1)(4)

(3)(4)

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

2.7 V < V

1.65 V < V

= 8 mA

< 3.6 V

= 4 mA

= 20 mA

2.7 V < V

< 3.6 V

-0.45

-0.4

-1.3

0.4

0.45

1.3

1. The I

current sunk by the device must always respect the absolute maximum rating specified in Table 11

and the sum of I

(I/O ports and control pins) must not exceed I

VSS

2. Guaranteed by test in production.

3. The I

current sourced by the device must always respect the absolute maximum rating specified in

Table 11

and the sum of I

(I/O ports and control pins) must not exceed I

VDD

4. Guaranteed by characterization results.

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Electrical characteristics STM32L151xE STM32L152xE

Input/output AC characteristics

The definition and values of input/output AC characteristics are given in

Figure 18

and

Table 44 , respectively.

Unless otherwise specified, the parameters given in

Table 44 are derived from tests

performed under the conditions summarized in Table 13

Table 44. I/O AC characteristics (1)

OSPEEDRx

[1:0] bit value (1)

Symbol Parameter Conditions Min Max

(2)

Unit

11 f max(IO)out t f(IO)out t r(IO)out f max(IO)out t f(IO)out t r(IO)out t f(IO)out t r(IO)out

Maximum frequency

(3)

Output rise and fall time

Maximum frequency

(3)

Output rise and fall time

F max(IO)out

Maximum frequency

(3)

F max(IO)out

Maximum frequency

(3) t f(IO)out t r(IO)out

Output rise and fall time

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 30 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 30 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

125

250

400

625

625 kHz ns

MHz ns

MHz

EXTIpw

Pulse width of external signals detected by the

EXTI controller

8 ns

1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the STM32L151xx, STM32L152xx and STM32L162xx reference manual for a description of GPIO Port configuration register.

2. Guaranteed by design.

3. The maximum frequency is defined in

Figure 18

92/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Figure 18. I/O AC characteristics definition

90% 10%

50%

10%

50%

90%

EXTERNAL

OUTPUT

ON 50pF tr(IO)out

T tf(IO)out

Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%) when loaded by 50pF ai14131c

6.3.14 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, R

(see Table 45 )

Unless otherwise specified, the parameters given in

Table 45 are derived from tests

performed under the conditions summarized in Table 13

Symbol Parameter

Table 45. NRST pin characteristics

Conditions Min Typ Max Unit

IL(NRST)

(1)

IH(NRST)

(1)

NRST input low level voltage

NRST input high level voltage

0.39V

+0.59

0.3 V

OL(NRST)

(1)

NRST output low level voltage

= 2 mA

2.7 V < V

< 3.6 V

= 1.5 mA

1.65 V < V

< 2.7 V

0.4

V hys(NRST)

F(NRST)

(1)

NF(NRST)

(3)

NRST Schmitt trigger voltage hysteresis

Weak pull-up equivalent resistor

(3)

NRST input filtered pulse

NRST input not filtered pulse

350

10%V

(2)

1. Guaranteed by design.

2. With a minimum of 200 mV.

3. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is around 10%.

V mV

Ω ns ns

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Electrical characteristics STM32L151xE STM32L152xE

Figure 19. Recommended NRST pin protection

External reset circuit(1)

NRST

(2)

RPU

Filter

Internal reset

0.1 μF

STM32L1xx ai17854b

1. The reset network protects the device against parasitic resets. 0.1 uF capacitor must be placed as close as possible to the chip.

2. The user must ensure that the level on the NRST pin can go below the V

Table 45 . Otherwise the reset is not taken into account by the device.

IL(NRST)

max level specified in

The parameters given in the

Table 46 are guaranteed by design.

Refer to Section 6.3.13: I/O port characteristics for details on the input/output ction

characteristics (output compare, input capture, external clock, PWM output).

Symbol

Table 46. TIMx (1) characteristics

Parameter Conditions Min t t res(TIM) f

EXT

Res

TIM

COUNTER

Timer resolution time

Timer external clock frequency on CH1 to CH4

Timer resolution

16-bit counter clock period when internal clock is selected (timer’s prescaler disabled)

TIMxCLK

= 32 MHz 31.25

0 f

TIMxCLK

= 32 MHz

TIMxCLK

= 32 MHz 0.0312

MAX_COUNT

Maximum possible count

TIMxCLK

= 32 MHz -

1. TIMx is used as a general term to refer to the TIM2, TIM3 and TIM4 timers.

Max

TIMxCLK

65536

2048 µs

65536 × 65536 t

TIMxCLK

134.2

Unit t

TIMxCLK ns

MHz

MHz bit t

TIMxCLK

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STM32L151xE STM32L152xE Electrical characteristics

I

C interface characteristics

The device I

C interface meets the requirements of the standard I

C communication protocol with the following restrictions: SDA and SCL are not “true” open-drain I/O pins.

When configured as open-drain, the PMOS connected between the I/O pin and V

DD is disabled, but is still present.

The I

C characteristics are described in

Table 47

. Refer also to

Section 6.3.13: I/O port characteristics for more details on the input/output ction characteristics (SDA and SCL).

Symbol Parameter

Table 47. I 2 C characteristics

Standard mode

(1) (2)

Min Max

Fast mode I

(1) (2)

Unit

Min Max t w(SCLL) t w(SCLH) t su(SDA) t h(SDA) t r(SDA) t r(SCL) t f(SDA) t f(SCL) t h(STA)

SCL clock low time

SCL clock high time

SDA setup time

SDA data hold time

SDA and SCL rise time

SDA and SCL fall time

4.7

4.0

250

3450

(3)

1000

300

1.3

0.6

100

900

(3)

300

µs ns t t su(STA) su(STO) t w(STO:STA) t

C b

Start condition hold time

Repeated Start condition setup time

Stop condition setup time

Stop to Start condition time

(bus free)

Capacitive load for each bus line

Pulse width of spikes that are suppressed by the analog filter

4.0

4.7

4.0

4.7

400

50 (4)

0.6

0.6 -

0.6

1.3

400

(4)

µs

μ pF ns

1. Guaranteed by design.

2. f

PCLK1 must be at least 2 MHz to achieve standard mode I ² C frequencies. It must be at least 4 MHz to achieve fast mode I²C frequencies. It must be a multiple of 10 MHz to reach the 400 kHz maximum I²C fast mode clock.

3. The maximum Data hold time has only to be met if the interface does not stretch the low period of SCL signal.

4. The minimum width of the spikes filtered by the analog filter is above t

SP(max)

. s s

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Electrical characteristics STM32L151xE STM32L152xE

Figure 20. I 2 C bus AC waveforms and measurement circuit

DD_I2C

C bus

SDA

SCL

STM32L1xx

START REPEATED

START t su(STA)

START

SDA t f(SDA) t r(SDA) t su(SDA)

STOP t su(STA:STO) t h(STA) t w(SCKL) t h(SDA)

SCL t w(SCKH) t r(SCK) t f(SCK) t su(STO) ai17855c

1. R

= series protection resistor.

2. R

= external pull-up resistor.

3. V

DD_I2C

is the I2C bus power supply.

4. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

Table 48. SCL frequency (f

PCLK1

= 32 MHz, V

= V

DD_I2C

= 3.3 V)

(1)(2)

I2C_CCR value f

SCL

(kHz)

= 4.7 k Ω

400

300

200

100

0x801B

0x8024

0x8035

0x00A0

0x0140

0x0320

1. R

= External pull-up resistance, f

SCL

= I 2 C speed.

2. For speeds around 200 kHz, the tolerance on the achieved speed is of ± 5%. For other speed ranges, the tolerance on the achieved speed is ± 2%. These variations depend on the accuracy of the external components used to design the application.

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STM32L151xE STM32L152xE Electrical characteristics

SPI characteristics

Unless otherwise specified, the parameters given in the following table are derived from

tests performed under the conditions summarized in Table 13

Refer to Section 6.3.12: I/O current injection characteristics for more details on the

input/output alternate function characteristics (NSS, SCK, MOSI, MISO).

Symbol Parameter

Table 49. SPI characteristics (1)

Conditions Min Max

(2)

Unit

Master mode f

SCK

1/t c(SCK)

SPI clock frequency Slave mode

Slave transmitter t t r(SCK)

(2) f(SCK)

(2)

SPI clock rise and fall time Capacitive load: C = 30 pF

DuCy(SCK) SPI slave input clock duty cycle Slave mode

(3)

MHz ns

% t su(NSS) t h(NSS) t t w(SCKH)

(2) w(SCKL)

(2) t su(MI)

(2) t su(SI)

(2) t h(MI)

(2) t h(SI)

(2) t a(SO)

(4) t v(SO)

(2) t v(MO)

(2) t h(SO)

(2) t h(MO)

(2)

NSS setup time

NSS hold time

SCK high and low time

Data input setup time

Data input hold time

Data output access time

Data output valid time

Data output hold time

Slave mode

Master mode

Slave mode

Master mode

Slave mode

Master mode

Slave mode

Master mode t

HCLK

SCK

/2 − 5 t

0.5

SCK

HCLK

/2 +3

6.5

1. The characteristics above are given for voltage range 1.

2. Guaranteed by characterization results.

3. The maximum SPI clock frequency in slave transmitter mode is given for an SPI slave input clock duty cycle (DuCy(SCK)) ranging between 40 to 60%.

4. Min time is for the minimum time to drive the output and max time is for the maximum time to validate the data.

DS10002 Rev 10 97/136

114

Electrical characteristics STM32L151xE STM32L152xE

Figure 21. SPI timing diagram - slave mode and CPHA = 0

NSS input

SCK input

MISO

OUTPUT

MOSI

INPUT

MSB OUT BIT6 OUT LSB OUT

(SI)

MSB IN

(SI)

BIT1 IN LSB IN

Figure 22. SPI timing diagram - slave mode and CPHA = 1 (1)

NSS input t

SU(NSS)

CPHA=1

CPOL=0

CPHA=1

CPOL=1 t w(SCKH) t w(SCKL) t a(SO)

MISO

OUTPUT

MOSI

INPUT t su(SI) t v(SO)

MSB OUT t h(SI)

MSB IN t c(SCK) t h(SO)

BIT6 OUT

BIT 1 IN t h(NSS) t r(SCK) t f(SCK) t dis(SO)

LSB OUT

LSB IN

1. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

ai14135b

98/136 DS10002 Rev 10

STM32L151xE STM32L152xE

Figure 23. SPI timing diagram - master mode (1)

Electrical characteristics

NSS input

High tc(SCK)

CPHA= 0

CPOL=0

CPHA= 0

CPOL=1

CPHA=1

CPOL=0

CPHA=1

CPOL=1

MISO

INP UT

MOSI

OUTPUT tsu(MI) tw(SCKH) tw(SCKL)

MSB IN th(MI)

MSB OUT tv(MO)

BIT6 IN

B I T1 OUT th(MO)

1. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

tr(SCK) tf(SCK)

LSB IN

LSB OUT ai14136c

DS10002 Rev 10 99/136

114

Electrical characteristics STM32L151xE STM32L152xE

USB characteristics

The USB interface is USB-IF certified (full speed).

Symbol

Table 50. USB startup time

Parameter t

STARTUP

(1)

USB transceiver startup time

1. Guaranteed by design.

Max

Unit

µs

Symbol

Table 51. USB DC electrical characteristics

Parameter Conditions Min.

(1)

Input levels

(2)

USB operating voltage

Differential input sensitivity I(USB_DP, USB_DM)

Differential common mode range Includes V

Single ended receiver threshold

Output levels

DI range

(3)

Static output level low

Static output level high

of 1.5

k Ω to 3.6 V

(4)

of 15 k Ω to V

(4)

1. All the voltages are measured from the local ground potential.

2. Guaranteed by characterization results.

3. Guaranteed by test in production.

4. R

is the load connected on the USB drivers.

3.0

0.2

0.8

1.3

2.8

Max.

(1) Unit

Differential data lines

CRS

Figure 24. USB timings: definition of data signal rise and fall time

Cross over points

SS t f t r

Table 52. USB: full speed electrical characteristics

Driver characteristics

(1)

Symbol t r t f t rfm

CRS

Rise time

(2)

Fall Time (2)

Parameter

Rise/ fall time matching

Output signal crossover voltage

Conditions

= 50 pF

= 50 pF t r

/t f

Min

1.3

Max

110

2.0

3.6

2.5

2.0

0.3

3.6

Unit ns ns

V ai14137b

100/136 DS10002 Rev 10

STM32L151xE STM32L152xE

Note:

Electrical characteristics

1. Guaranteed by design.

2. Measured from 10% to 90% of the data signal. For more detailed informations, refer to USB Specification -

Chapter 7 (version 2.0).

I2S characteristics

Symbol Parameter

Table 53. I2S characteristics

Conditions f

MCK f

I2S Main Clock Output

I2S clock frequency

Master data: 32 bits

Slave data: 32 bits

CK t r(CK) t f(CK) t v(WS) t h(WS) t su(WS) t h(WS) t su(SD_MR) t su(SD_SR) t h(SD_MR) t h(SD_SR)

I2S clock frequency duty cycle Slave receiver, 48KHz

I2S clock rise time

I2S clock fall time

WS valid time

WS hold time

WS setup time

WS hold time

Data input setup time

Data input hold time

Capacitive load CL=30pF

Master mode

Slave mode

Master receiver

Slave receiver

Master receiver

Slave receiver t t v(SD_ST) h(SD_ST)

Data output valid time

Data output hold time

Slave transmitter

(after enable edge)

Slave transmitter

(after enable edge) t t v(SD_MT) h(SD_MT)

Data output valid time

Data output hold time

Master transmitter

(after enable edge)

Master transmitter

(after enable edge)

1. The maximum for 256xFs is 8 MHz

Min Max

256 x 8K 256xFs

(1)

64xFs

15 -

Unit

MHz

% ns

Refer to the I2S section of the product reference manual for more details about the sampling frequency (Fs), f

MCK

, f

and D

values. These values reflect only the digital peripheral behavior, source clock precision might slightly change them. DCK depends mainly on the

ODD bit value, digital contribution leads to a min of (I2SDIV/(2*I2SDIV+ODD) and a max of

(I2SDIV+ODD)/(2*I2SDIV+ODD). Fs max is supported for each mode/condition.

DS10002 Rev 10 101/136

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Electrical characteristics STM32L151xE STM32L152xE

Figure 25. I 2 S slave timing diagram (Philips protocol) (1)

1. Measurement points are done at CMOS levels: 0.3 × V

DD and 0.7 × V

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

Figure 26. I 2 S master timing diagram (Philips protocol) (1)

102/136

1. Guaranteed by characterization results.

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics f

ADC

Unless otherwise specified, the parameters given in

Table 55 are guaranteed by design.

Symbol Parameter

ADC clock frequency

Voltage range 1 & 2

Table 54. ADC clock frequency

Conditions

2.4 V ≤ V

DDA

≤ 3.6 V

1.8 V ≤ V

DDA

≤ 2.4 V

REF+ =

DDA

REF+

< V

DDA

> 2.4 V

REF+

< V

DDA

≤ 2.4 V

REF+ =

DDA

REF+

< V

DDA

Voltage range 3

Min

0.480

Max

Unit

MHz

Symbol

DDA

REF+

REF-

VDDA

Parameter

Power supply

Positive reference voltage

Negative reference voltage

Current on the V

DDA

input pin

VREF

(2)

AIN f

Current on the V

REF

input pin

Conversion voltage range

(3)

12-bit sampling rate

10-bit sampling rate

8-bit sampling rate

6-bit sampling rate

Table 55. ADC characteristics

Conditions

Peak

Average

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Min

1.8

(1)

(4)

Typ Max

SSA

1000

400

3.6

DDA

1450

700

450

REF+

0.76

1.07

0.8

1.23

0.89

1.45

Unit

µA

Msps

DS10002 Rev 10 103/136

114

Electrical characteristics STM32L151xE STM32L152xE

Symbol Parameter

Table 55. ADC characteristics (continued)

Conditions Min Typ Max Unit t

(5)

Sampling time

Direct channels

2.4 V ≤ V

DDA

≤ 3.6 V

Multiplexed channels

2.4 V ≤ V

DDA

≤ 3.6 V

Direct channels

1.8 V ≤ V

DDA

≤ 2.4 V

Multiplexed channels

1.8 V ≤ V

DDA

≤ 2.4 V

ADC

= 16 MHz

0.25

0.56

1 -

µs t

CONV

Total conversion time

(including sampling time)

384 1/f

ADC

24.75

µs

4 to 384 (sampling phase) +12

(successive approximation)

1/f

ADC

Internal sample and hold capacitor

Direct channels

Multiplexed channels

R f f

TRIG

AIN

(6)

External trigger frequency

Regular sequencer

External trigger frequency

Injected sequencer

Signal source impedance

12-bit conversions

6/8/10-bit conversions

12-bit conversions

6/8/10-bit conversions

Tconv+1 1/f

ADC

Tconv 1/f

ADC

Tconv+2 1/f

ADC

Tconv+1 1/f

ADC

50 k Ω

281 ns t lat t latr

Injection trigger conversion latency

Regular trigger conversion latency f f

ADC

= 16 MHz

219

3.5

156

2.5

4.5

219

3.5

1/f

ADC t

STAB

Power-up time 3.5

1. The Vref+ input can be grounded if neither the ADC nor the DAC are used (this allows to shut down an external voltage reference).

2. The current consumption through VREF is composed of two parameters:

- one constant (max 300 µA)

- one variable (max 400 µA), only during sampling time + 2 first conversion pulses

So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at

1Msps

3. V can be internally connected to V

Refer to Section 4: Pin descriptions

DDA

and V

for further details.

can be internally connected to V

SSA

, depending on the package.

4. V

SSA

or V

REF-

must be tied to ground.

5. Minimum sampling time is reached for an external input impedance limited to a value as defined in

Table 57: Maximum source impedance R

AIN

max .

6. External impedance has another high value limitation when using short sampling time as defined in Table 57: Maximum source impedance R

AIN

max .

1/f

ADC

µs

104/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Symbol Parameter

Table 56. ADC accuracy (1)(2)

Test conditions Min

(3)

Typ Max

(3)

Unit

Total unadjusted error

Offset error

Gain error

Differential linearity error

EL Integral linearity error

ENOB Effective number of bits

SINAD

Signal-to-noise and distortion ratio

SNR Signal-to-noise ratio

THD Total harmonic distortion

ENOB Effective number of bits

SINAD

Signal-to-noise and distortion ratio

SNR Signal-to-noise ratio

THD Total harmonic distortion

ET Total unadjusted error

EO Offset error

Gain error

Differential linearity error

Integral linearity error

Total unadjusted error

Offset error

Gain error

Differential linearity error

Integral linearity error f

2.4 V ≤ V

DDA

2.4 V ≤ V

REF+

ADC

DDA

= f

ADC

≤ 3.6 V

= 8 MHz, R

AIN

= -40 to 105 ° C

2.4 V ≤ V

DDA input

REF+

=10kHz

= 50 Ω

≤ 3.6 V

= 16 MHz, R

AIN

= -40 to 105 ° C

= 50 Ω

9.2

57.5

9.2

57.5

2.5

1.5

2.2

-70

1.5

2.2

-70

1.5

3.5

2.5

3.5

-65

LSB bits dB bits f

1.8 V ≤ V

DDA

≤ 2.4 V

DDA

ADC

REF+

= 8 MHz or 4 MHz, R

= -40 to 105 ° C input

=10kHz

AIN

= 50 Ω f f

2.4 V ≤ V

DDA

1.8 V ≤ V

REF+

ADC

2.4 V

= 4 MHz, R

AIN

= -40 to 105 ° C

1.8 V ≤ V

DDA

1.8 V ≤ V

REF+

ADC

≤

3.6 V

= 50 Ω

2.4 V

≤

= 4 MHz, R

AIN

= -40 to 105 ° C

2.4 V

= 50 Ω

57.5

LSB

1. ADC DC accuracy values are measured after internal calibration.

2. ADC accuracy vs. negative injection current: Injecting a negative current on any analog input pins must be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a

Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.

Any positive injection current within the limits specified for I accuracy.

INJ(PIN)

and Σ I

INJ(PIN)

Section 6.3.12

does not affect the ADC

3. Guaranteed by characterization results.

1.5

-65

6.5

DS10002 Rev 10 105/136

114

Electrical characteristics STM32L151xE STM32L152xE

Figure 27. ADC accuracy characteristics

Output code

2 n -1

2 n -2

2 n -3

1 LSB

IDEAL

1 2 3 4 5 6 7

(2)

(3)

(1)

2 n -3 2 n -2 2 n -1 2 n

(1) Example of an actual transfer curve

(2) Ideal transfer curve

(3) End-point correlation line n = ADC resolution

= total unajusted error : maximum deviation

between the actual and ideal transfer curves

= offset error : maximum deviation between the

first actual transition and the first ideal one

= gain error : deviation between the last ideal

transition and the last actual one

= differential linearity error : maximum deviation

between actual steps and the ideal one

= integral linearity error : maximum deviation

between any actual transition and the end point

correlation line

REF+

(or V

DDA

)

MS19880V4

Figure 28. Typical connection diagram using the ADC

DDA

AIN

(1)

AINx

Cparasitic

IL± 50 nA

STM32Lxx

Sample and hold

ADC converter

12-bit converter

ADC

(1) ai17856e

1. Refer to Table 57: Maximum source impedance R

characteristics for the value of C

ADC

AIN

max for the value of R

AIN

and Table 55: ADC

2. C f parasitic

represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 7

ADC

must be reduced.

pF). A high C parasitic

value downgrades conversion accuracy. To remedy this,

106/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Figure 29. Maximum dynamic current consumption on V

REF+ conversion

supply pin during ADC

Conversion (12 cycles)

ADC clock

I ref+

700µA

Sampling (n cycles)

300µA

MS36686V1

1.5

Table 57. Maximum source impedance R

AIN

max (1)

AIN

max (k Ω )

(µs)

Multiplexed channels Direct channels

0.25

0.5625

2.4 V < V

DDA

< 3.6 V 1.8 V < V

DDA

< 2.4 V 2.4 V < V

DDA

< 3.6 V 1.8 V < V

DDA

< 2.4 V

Not allowed

0.8

Not allowed

0.7

2.0

Not allowed

1.0

Ts (cycles) f

ADC

=16 MHz

(2)

2.0

3.0

6.8

15.0

32.0

50.0

0.8

1.8

4.0

10.0

25.0

50.0

4.0

6.0

15.0

30.0

50.0

3.0

4.5

10.0

20.0

40.0

50.0

192

384

1. Guaranteed by design.

2. Number of samples calculated for f = 16 MHz. For f with respect to the minimum sampling time Ts (µs),

ADC

= 8 and 4 MHz the number of sampling cycles can be reduced

General PCB design guidelines

Power supply decoupling must be performed as shown in Figure 11

. The applicable procedure depends on whether V

REF+

is connected to V

DDA

or not. The 100 nF capacitors must be ceramic (good quality). They must be placed as close as possible to the chip.

DS10002 Rev 10 107/136

114

Electrical characteristics STM32L151xE STM32L152xE

Data guaranteed by design, unless otherwise specified.

Symbol

DDA

REF+

REF-

DDVREF+

(1)

DDA

(1)

(2)

Parameter

Table 58. DAC characteristics

Conditions

Analog supply voltage -

Reference supply voltage

Lower reference voltage

REF+

must always be below

DDA

Current consumption on

REF+

supply

= 3.3 V

Current consumption on

DDA

supply

= 3.3 V

No load, middle code (0x800)

No load, worst code (0x000)

No load, middle code (0x800)

No load, worst code (0xF1C)

Resistive load

Capacitive load

DAC output buffer ON

Connected to

SSA

Conected to

DDA

DAC output buffer ON

Output impedance DAC output buffer OFF

Min

1.8

DAC output buffer ON 0.2

DAC_OUT

Voltage on DAC_OUT output

DAC output buffer OFF 0.5

DNL

INL

(1)

Offset (1)

Offset1 (1)

Differential non linearity

0x001

(6)

(3)

Integral non linearity

(4)

Offset error at code

0x800

(5)

Offset error at code

≤ 50 pF, R

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

≤ 50 pF, R

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

≤ 50 pF, R

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

No R

, C

≤ 50 pF

DAC output buffer OFF

1.5

±10

±5

±1.5

Typ

SSA

130

220

210

320

Max

3.6

Unit

220

350

320

520

µA k Ω pF k Ω

DDA

– 0.2

REF+

1LSB

– mV

±25

±8

±5

LSB

108/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Symbol Parameter

Table 58. DAC characteristics (continued)

Conditions t t dOffset/dT

(1)

Gain

(1) dGain/dT

TUE

(1)

SETTLING

(1)

Update rate

WAKEUP

PSRR+

Offset error temperature coefficient (code 0x800)

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer OFF

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer ON

Gain error

(7)

≤ 50 pF, R

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

Gain error temperature coefficient

Total unadjusted error

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer OFF

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer ON

≤ 50 pF, R

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

Settling time (full scale: for a 12-bit code transition between the lowest and the highest input codes till

DAC_OUT reaches final value ±1LSB

≤ 50 pF, R

≥ 5 k Ω

Max frequency for a correct DAC_OUT change (95% of final value) with 1 LSB variation in the input code

DDA

supply rejection ratio (static DC measurement)

Wakeup time from off state (setting the ENx bit in the DAC Control register)

(8)

≤ 50 pF, R

≥ 5 k Ω

≤ 50 pF, R

≥

5 k

1. Data based on characterization results.

2. Connected between DAC_OUT and VSSA.

3. Difference between two consecutive codes - 1 LSB.

Min

-20

-10

-40

Typ

-10

Max

+0.1 / -0.2% +0.2 / -0.5%

+0 / -0.2% +0 / -0.4%

-2

-8

-60 -35

Unit

µV/°C

LSB

µs

Msps

µs dB

DS10002 Rev 10 109/136

114

Electrical characteristics STM32L151xE STM32L152xE

4. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.

5. Difference between the value measured at Code (0x800) and the ideal value = V

REF+

/2.

6. Difference between the value measured at Code (0x001) and the ideal value.

7. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when buffer is OFF, and from code giving 0.2 V and (V

DDA

– 0.2) V when buffer is ON.

8. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).

Figure 30. 12-bit buffered /non-buffered DAC

Buffered/Non-buffered DAC

Buffer(1)

R L

12-bit digital to analog converter

DAC_OUTx

C L ai17157V3

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the DAC_CR register.

Symbol

Table 59. Operational amplifier characteristics

Parameter

CMIR

OFFSET

Δ VI

OFFSET

LOAD

CMRR

Common mode input range

Input offset voltage

Maximum calibration range

After offset calibration

Input offset voltage drift

Normal mode

Low-power mode

Input current bias

Dedicated input

General purpose input

Normal mode

Drive current

Consumption

Common mode rejection ration

Low-power mode

Normal mode

Low-power mode

Normal mode

Low-power mode

Condition

(1)

75 °C

No load, quiescent mode

Min

(2)

Typ

100

-85

-90

Max

(2)

± 15

Unit

± 1.5

± 40

± 80

500

100

220

µV/°C

µA

µA dB

110/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

Symbol

Table 59. Operational amplifier characteristics (continued)

Parameter Condition (1) Min (2) Typ Max (2) Unit

PSRR

GBW

Power supply rejection ratio

Bandwidth

Normal mode

Low-power mode

Normal mode

Low-power mode

>2.4 V

Normal mode

Low-power mode

<2.4 V

Normal mode

>2.4 V

(between 0.1 V and

-0.1 V)

Low-power mode V

>2.4 V

Normal mode

Low-power mode

<2.4 V

400

150

200

-85

-90

1000

300

500

150

700

3000

800

2200

800

dB kHZ

SR Slew rate

100

300

50 -

AO Open loop gain

Normal mode

Low-power mode

100

110

VOH

SAT

VOL

SAT ϕ m

Resistive load

Capacitive load

High saturation voltage

Low saturation voltage

Phase margin

Gain margin

Normal mode

Low-power mode

Normal mode

Low-power mode

Normal mode

Low-power mode

<2.4 V

LOAD

= max or

= min

100

-50 -

-12

100

OFFTRIM

Offset trim time: during calibration, minimum time needed between two steps to have 1 mV accuracy

1 t

WAKEUP

Wakeup time

Normal mode

Low-power mode

≤ 50 pf,

≥ 4 k Ω

≤ 50 pf,

≥ 20 k Ω

30 -

1. Operating conditions are limited to junction temperature (0 °C to 105 °C) when V ambient temperature range (-40 °C to 85 °C, -40 °C to 105 °C).

is below 2 V. Otherwise to the full

2. Guaranteed by characterization results.

V/ms dB k pF mV

Ω dB ms

µs

DS10002 Rev 10 111/136

114

Electrical characteristics STM32L151xE STM32L152xE

6.3.20 Temperature sensor characteristics

Table 60. Temperature sensor calibration values

Calibration value name Description Memory address

TS_CAL1

TS_CAL2

TS ADC raw data acquired at temperature of 30 °C ± 5 °C

DDA

= 3 V ± 10 mV

TS ADC raw data acquired at temperature of 110 °C ± 5 °C

DDA

= 3 V ± 10 mV

0x1FF8 00FA - 0x1FF8 00FB

0x1FF8 00FE - 0x1FF8 00FF

Symbol

(1)

Avg_Slope

110

DDA (TEMP)

(3) t

START

(3)

S_temp

(3)

(1)

Table 61. Temperature sensor characteristics

Parameter

SENSE

linearity with temperature

Average slope

Voltage at 110°C ±5°C

(2)

Current consumption

Startup time

ADC sampling time when reading the temperature

Min

1.48

612

Typ

1.61

626.8

3.4

Max

± 2

1.75

641.5

1. Guaranteed by characterization results.

2. Measured at V

= 3 V ±10 mV. V110 ADC conversion result is stored in the TS_CAL2 byte.

3. Guaranteed by design.

6.3.21 Comparator

Symbol

Table 62. Comparator 1 characteristics

Parameter Conditions Min

(1)

DDA

400K

10K

IN t

START td

Analog supply voltage

400K

value

10K

value

Comparator 1 input voltage range

Comparator startup time

Propagation delay

(2)

Voffset

/dt

COMP1

Comparator offset

Comparator offset variation in worst voltage stress conditions

Current consumption

(3)

DDA

IN+

IN-

= 3.6 V

= 0 V

= V

REFINT

= 25 ° C

1.65

0.6

Typ

± 3

400

1.5

160

Max

(1)

3.6

DDA

± 10

260

µs

Unit

V k Ω

Unit

°C mV/°C mV

µA

µs mV mV/1000 h nA

112/136 DS10002 Rev 10

STM32L151xE STM32L152xE Electrical characteristics

1. Guaranteed by characterization results.

2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the noninverting input set to the reference.

3. Comparator consumption only. Internal reference voltage not included.

Symbol

Table 63. Comparator 2 characteristics

Parameter Conditions Min Typ Max

(1)

Unit

I t t

DDA

IN t

START

V d slow d fast offset dThreshold/ dt

COMP2

Analog supply voltage

Comparator 2 input voltage range

Comparator startup time

Propagation delay

(2)

in slow mode

Propagation delay coefficient

(2)

Current consumption

in fast mode

Comparator offset error

Threshold voltage temperature

(3)

Fast mode

Slow mode

1.65 V ≤ V

DDA

≤ 2.7 V

2.7 V ≤ V

DDA

≤ 3.6 V

1.65 V ≤ V

DDA

≤ 2.7 V

2.7 V ≤ V

DDA

≤ 3.6 V

DDA

V- =V

3/4 V

REFINT

1/2 V

1/4 V

= 3.3V

= 0 to 50 ° C

REFINT

Fast mode

1.65

0 -

1.8

2.5

0.8

1.2

± 4

3.5

0.5

3.6

DDA

3.5

µs

± 20 mV

100

1. Guaranteed by characterization results.

2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the noninverting input set to the reference.

3. Comparator consumption only. Internal reference voltage (necessary for comparator operation) is not included.

ppm

/°C

µA

DS10002 Rev 10 113/136

114

Electrical characteristics STM32L151xE STM32L152xE

The device embeds a built-in step-up converter to provide a constant LCD reference voltage independently from the V

LCD

voltage. An external capacitor C

pin to decouple this converter.

ext

must be connected to the

Symbol

Table 64. LCD controller characteristics

Parameter Min Typ Max Unit

LCD

LCD0

LCD1

LCD2

LCD3

LCD4

LCD5

LCD6

LCD7

C ext

LCD external voltage

LCD internal reference voltage 0

LCD internal reference voltage 1

LCD internal reference voltage 2

LCD internal reference voltage 3

LCD internal reference voltage 4

LCD internal reference voltage 5

LCD internal reference voltage 6

LCD internal reference voltage 7 -

2.6

2.73

2.86

2.98

3.12

3.26

3.4

3.55

3.6

LCD

(1)

LCD

external capacitance

Supply current at V

= 2.2 V

Supply current at V

= 3.0 V

Low drive resistive network overall value

0.1

3.3

3.1

µF

µA

Htot

(2)

High drive resistive network total value

Segment/Common highest level voltage

Segment/Common 3/4 level voltage

Segment/Common 2/3 level voltage

Segment/Common 1/2 level voltage

Segment/Common 1/3 level voltage

Segment/Common 1/4 level voltage

Segment/Common lowest level voltage

5.28

192

6.6

240

3/4 V

2/3 V

1/2 V

1/3 V

1/4 V

LCD

7.92

288

LCD

M k

Δ Vxx

(3)

Segment/Common level voltage error

= -40 to 105 ° C

± 50 mV

1. LCD enabled with 3 V internal step-up active, 1/8 duty, 1/4 bias, division ratio= 64, all pixels active, no LCD connected.

2. Guaranteed by design.

3. Guaranteed by characterization results.

114/136 DS10002 Rev 10

STM32L151xE STM32L152xE Package information

7.1

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com

ECOPACK is an ST trademark.

LQFP64 package information

LQFP64 is a 14-pin, 10 x 10 mm, low-profile quad flat package information.

Figure 31. LQFP64 outline

SEATING PLANE

0.25 mm

GAUGE PLANE ccc C

K D

D3 L1

48 33

32 b

64 17

PIN 1

IDENTIFICATION

1. Drawing is not to scale.

Symbol

A2 b

Min

0.050

1.350

0.170

Table 65. LQFP64 mechanical data millimeters inches

(1)

Typ

1.400

0.220

Max

1.600

0.150

1.450

0.270

Min

0.0020

0.0531

0.0067

Typ

0.0551

0.0087

5W_ME_V3

Max

0.0630

0.0059

0.0571

0.0106

DS10002 Rev 10 115/136

135

Package information STM32L151xE STM32L152xE

Table 65. LQFP64 mechanical data (continued) millimeters inches (1)

Symbol

Min Typ Max Min

E3 c

L1 e

K ccc

0.090

0°

0.450

12.000

10.000

7.500

12.000

10.000

7.500

0.500

3.5°

0.600

1.000

0.200

7°

0.750

0.080

1. Values in inches are converted from mm and rounded to 4 decimal digits.

0.0035

0°

0.0177

Typ

0.4724

0.3937

0.2953

0.4724

0.3937

0.2953

0.0197

3.5°

0.0236

0.0394

Figure 32. LQFP64 recommended footprint

48 33

0.3

0.5

Max

0.0079

7°

0.0295

0.0031

12.7

10.3

1.2

7.8

12.7

16 ai14909c

1. Dimensions are in millimeters.

116/136 DS10002 Rev 10

STM32L151xE STM32L152xE Package information

LQFP64 device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 33. LQFP64 top view example

Product identification

(1)

STM32L

151RET6

Revision code

Date code

Y WW

Pin 1 indentifier

MSv36625V1

1. Parts marked as ES or E or accompanied by an engineering sample notification letter are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.

DS10002 Rev 10 117/136

135

Package information STM32L151xE STM32L152xE

LQFP100 is a 100-pin, 14 x 14 mm, low-profile quad flat package.

Figure 34. LQFP100 outline

SEATING PLANE

0.25 mm

GAUGE PLANE ccc C

L K

75 51

118/136

100

PIN 1

IDENTIFICATION

1 e

26 b c

A2 e

1. Drawing is not to scale.

Symbol

Min

0.050

1.350

0.170

0.090

15.800

13.800

15.800

13.800

0.450

Table 66. LQPF100 mechanical data millimeters

Typ

1.400

0.220

16.000

14.000

12.000

16.000

14.000

12.000

0.500

0.600

1.000

Max

1.600

0.150

1.450

0.270

0.200

16.200

14.200

16.200

14.200

0.750

Min

0.0020

0.0531

0.0067

0.0035

0.6220

0.5433

0.6220

0.5433

0.0177

inches

(1)

Typ

0.0551

0.0087

0.6299

0.5512

0.4724

0.6299

0.5512

0.4724

0.0197

0.0236

0.0394

1L_LQFP100_ME_V5

Max

0.0630

0.0059

0.0571

0.0106

0.0079

0.6378

0.5591

0.6378

0.5591

0.0295

DS10002 Rev 10

STM32L151xE STM32L152xE Package information

Table 66. LQPF100 mechanical data (continued) millimeters inches (1)

Symbol

Min Typ Max Min k ccc

0.0°

3.5°

7.0°

0.080

0.0°

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ

3.5°

Figure 35. LQFP100 recommended footprint

75 51

76 50

0.5

0.3

16.7

14.3

Max

7.0°

0.0031

100

12.3

16.7

1.2

1L_LQFP100_FP_V1

1. Dimensions are in millimeters.

DS10002 Rev 10 119/136

135

Package information STM32L151xE STM32L152xE

LQFP100 device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 36. LQFP100 top view example

Product identification

(1)

STM32L151

VET6 R

Date code

Y WW

Revision code

Pin 1 indentifier

MSv36626V2

120/136 DS10002 Rev 10

STM32L151xE STM32L152xE

7.3 WLCSP104 package information

Package information

WLCSP104 is a 104-ball, 0.4 mm pitch wafer level chip scale package.

F e1

Figure 37. WLCSP104 outline

A1 ball location bbb Z

Detail A e2 e e

Bottom view

Bump side

Side view

E reference

A1 orientation aaa Z

Top view

Wafer back side

1. Drawing is not to scale.

Bump

A3 eee Z

Ø ccc

Ø ddd

Øb

X Y

Seating

Detail A

Rotated 90° plane

A0YY_ME_V2

DS10002 Rev 10 121/136

135

Package information STM32L151xE STM32L152xE

Table 67. WLCSP104 mechanical data millimeters inches

(1)

Symbol

Min Typ Max Min Typ e2

G aaa bbb ccc ddd eee e e1

(2)

ø b

(3)

0.525

0.22

4.06

5.059

0.555

0.175

0.38

0.025

0.25

4.095

5.094

0.4

3.2

4.4

0.447

0.347

0.585

0.28

4.13

5.129

0.1

0.05

1. Values in inches are converted from mm and rounded to 4 decimal digits.

2. Back side coating.

3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

0.0207

0.0087

0.1598

0.1992

0.0157

0.126

0.1732

0.0176

0.0137

0.0219

0.0069

0.015

0.001

0.0098

0.1612

0.2006

Figure 38. WLCSP104 recommended footprint

Max

0.0039

0.002

0.023

0.011

0.1626

0.2019

122/136

Dpad

Dsm

DS10002 Rev 10

MS18965V2

STM32L151xE STM32L152xE Package information

Dimension

Pitch

Dpad

Dsm

PCB pad design

Table 68. WLCSP104 recommended PCB design rules

Recommended values

0.4

260 µm max. (circular)

220 µm recommended

300 µm min. (for 260 µm diameter pad)

Non-solder mask defined via underbump allowed.

WLCSP104 device marking

The following figure gives an example of topside marking orientation versus ball A1 identifier location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 39. WLCSP104 top view example

Product identification(1)

32L151VEY6

Date code

Y WW R

Revision code

Ball A1 identifier

MS37511V1

DS10002 Rev 10 123/136

135

Package information

7.4 UFBGA132 package information

STM32L151xE STM32L152xE

UFBGA132 is a 132-ball, 7 x 7 mm, ultra thin, fine-pitch ball grid array package.

Z e

Figure 40. UFBGA132 outline

A1 ball identifier

D1 D e

BOTTOM VIEW

Øb (132 balls)

Ø eee M C A B

Ø fff M C

TOP VIEW

A4 ddd C

A2 A3 b A1 A

SEATING

PLANE

UFBGA132_A0G8_ME_V2

1. Drawing is not to scale.

Symbol

E e b

F ddd

Min

0.460

0.050

0.400

0.270

0.170

6.950

0.700

Table 69. UFBGA132 mechanical data millimeters inches

(1)

Typ

0.530

0.080

0.450

0.320

0.280

7.000

0.500

0.750

Max

0.600

0.110

0.500

0.370

0.330

7.050

0.800

0.080

Min

0.0181

0.0020

0.0157

0.0106

0.0067

0.2736

0.0276

Typ

0.0209

0.0031

0.0177

0.0126

0.0110

0.2756

0.0197

0.0295

Max

0.0236

0.0043

0.0197

0.0146

0.0130

0.2776

0.0315

0.0031

124/136 DS10002 Rev 10

STM32L151xE STM32L152xE Package information

Table 69. UFBGA132 mechanical data (continued) millimeters inches (1)

Symbol

Min Typ Max Min eee fff

0.150

0.050

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ

Figure 41. UFBGA132 recommended footprint

Max

0.0059

0.0020

DS10002 Rev 10 125/136

135

Package information STM32L151xE STM32L152xE

UFBGA132 device marking

The following figure gives an example of topside marking orientation versus ball A1 identifier location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 42. UFBGA132 top view example

Product identification

(1)

32L151

QEH6

Ball A1 indentifier

Date code

Y WW

Revision code

MSv36624V1

126/136 DS10002 Rev 10

STM32L151xE STM32L152xE

LQFP144 is a 144-pin 20 x 20 mm, low-profile quad flat package.

Figure 43. LQFP144 outline

SEATING

PLANE

Package information c ccc C

0.25 mm

GAUGE PLANE

L K

109

108 73

144

PIN 1

IDENTIFICATION

1. Drawing is not to scale.

1A_ME_V3

DS10002 Rev 10 127/136

135

Package information STM32L151xE STM32L152xE

Table 70. LQFP144 mechanical data millimeters

Symbol

Min Typ Max Min e

E3 k ccc

D1 b c

0.050

1.350

0.170

0.090

21.800

19.800

21.800

19.800

0.450

0°

1.400

0.220

22.000

20.000

17.500

22.000

20.000

17.500

0.500

0.600

1.000

3.5°

1.600

0.150

1.450

0.270

0.200

22.200

20.200

22.200

20.200

0.750

7°

0.080

1. Values in inches are converted from mm and rounded to 4 decimal digits.

0.8583

0.7795

0.0177

0°

0.0020

0.0531

0.0067

0.0035

0.8583

0.7795

inches

(1)

Typ

0.6890

0.8661

0.7874

0.6890

0.0197

0.0236

0.0394

3.5°

0.0551

0.0087

0.8661

0.7874

Figure 44. LQFP144 recommended footprint

108 73

1.35

109

0.35

Max

0.8740

0.7953

0.0295

7°

0.0031

0.0630

0.0059

0.0571

0.0106

0.0079

0.8740

0.7953

0.5

19.9

17.85

22.6

128/136

144

1. Dimensions are in millimeters.

19.9

22.6

DS10002 Rev 10

36 ai14905e

STM32L151xE STM32L152xE Package information

LQFP144 device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 45. LQFP144 top view example

Revision code

Product identification(1) R

STM32L151ZET6

Pin 1 identifier

YWW

Date code

MS36627V2

1. Parts marked as ES or E or accompanied by an Engineering sample notification letter are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.

DS10002 Rev 10 129/136

135

Package information STM32L151xE STM32L152xE

The maximum chip-junction temperature, T

J using the following equation:

max, in degrees Celsius, may be calculated

max = T

max + (P

max × Θ

)

Where:

• T

max is the maximum ambient temperature in ° C,

• Θ

is the package junction-to-ambient thermal resistance, in ° C/W,

• P

max is the sum of P

INT

max and P

I/O max (P

max = P

INT

max + P

I/O max),

• P

INT

max is the product of I

DD and internal power.

, expressed in Watts. This is the maximum chip

I/O

max represents the maximum power dissipation on output pins where:

I/O

max = Σ (V

× I

) + Σ ((V

– V

) × I

), taking into account the actual V

OL application.

/ I

and V

/ I

OH of the I/Os at low and high level in the

Symbol

Table 71. Thermal characteristics

Parameter

Thermal resistance junction-ambient

LQFP144 - 20 x 20 mm / 0.5 mm pitch

Thermal resistance junction-ambient

UFBGA132 - 7 x 7 mm

Thermal resistance junction-ambient

LQFP100 - 14 x 14 mm / 0.5 mm pitch

Thermal resistance junction-ambient

LQFP64 - 10 x 10 mm / 0.5 mm pitch

Thermal resistance junction-ambient

WLCSP104 - 0.400 mm pitch

Value

Unit

°C/W

130/136 DS10002 Rev 10

STM32L151xE STM32L152xE

3000.00

Figure 46. Thermal resistance suffix 6

Package information

2500.00

Forbidden areaTJ > TJ max

PD (mW)

2000.00

1500.00

1000.00

500.00

0.00

100 75 50 25

Temperature (°C)

LQFP64 10x10 mm / WLCSP104

UFBGA132 7x7 mm

LQFP144 20x20 mm

LQFP 100 14x14 mm

3000.00

Figure 47. Thermal resistance suffix 7

2500.00

Forbidden areaTJ > TJ max

PD (mW)

2000.00

1500.00

1000.00

500.00

0.00

105 75 50 25

Temperature (°C)

LQFP64 10x10 mm / WLCSP104

UFBGA132 7x7 mm

LQFP144 20x20 mm

LQFP 100 14x14 mm

MS34766V1

MSv34185V1

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural

Convection (Still Air). Available from www.jedec.org.

DS10002 Rev 10 131/136

135

Ordering information STM32L151xE STM32L152xE

132/136

Table 72. STM32L151xE and STM32L152xE Ordering information scheme

Example: STM32 L 151 R E T 6 D TR

Device family

STM32 = Arm-based 32-bit microcontroller

Product type

L = Low-power

Device subfamily

151: Devices without LCD

152: Devices with LCD

Pin count

R = 64 pins

V = 100/104 pins

Z = 144 pins

Q = 132 pins

Flash memory size

E= 512 Kbytes of Flash memory

Package

H = BGA

T = LQFP

Y = WLCSP104

Temperature range

6 = Industrial temperature range, –40 to 85 °C

7 = Industrial temperature range, –40 to 105 °C

Options

No character = V

range: 1.8 to 3.6 V and BOR enabled

D = V

range: 1.65 to 3.6 V and BOR disabled

Packing

TR = tape and reel

No character = tray or tube

For a list of available options (speed, package, etc.) or for further information on any aspect of this device, contact the nearest ST sales office.

DS10002 Rev 10

STM32L151xE STM32L152xE Revision History

Date

31-Oct-2013

19-Feb-2014

21-Feb-2014

16-May-2014

13-Oct-2014

10-Feb-2015

Revision

Table 73. Document revision history

Changes

Initial release.

Added Input Voltage in Table 13: General operating conditions

Updated: Section 2.2: Ultra-low-power device continuum

Table 21:

Current consumption in Low-power sleep mode

Table 20: Current consumption in Low-power run mode

Table 36: Flash memory and data EEPROM endurance and retention

Updated Ultra-Low-power Feature inside Cover Page

Updated

Table 56: ADC accuracy

Table 37: EMS characteristics

Table 38: EMI characteristics , Table 39: ESD absolute maximum ratings

Table 42: I/O static characteristics

, Table 45: NRST pin characteristics

. Added

WLCSP104 recommended footprint

for package WLCSP104, removed figures “Power supply and reference decoupling (V

REF+

not connected to V

DDA

) and “Power supply and reference decoupling (V

REF+ consumption values.

connected to V

DDA

). Updated current

Ultra low power features modification inside Cover page. Updated

Table 5: Functionalities depending on the working mode (from

Run/active down to standby)

, Table 58: DAC characteristics

Updated I

Table 11: Current characteristics

Removed note 4 in

Table 61: Temperature sensor characteristics .

Added

Table 41: UFBGA132 recommended footprint ..

Modified pins F9 for WLCSP104 package inside

Table 8:

STM32L151xE and STM32L152xE pin definitions

Updated

Section 3.17: Communication interfaces putting I2S

characteristics inside.

Updated DMIPS features in cover page and

Section 2: Description .

Updated max temperature at 105°C instead of 85°C in the whole datasheet.

Updated current consumption in

Table 19: Current consumption in

Sleep mode .

Updated Table 24: Peripheral current consumption with new measured

current values.

Updated Table 57: Maximum source impedance R

AIN

max adding note

Updated

Section 7: Package information

with new package device marking.

Updated

Figure 8: Memory map

DS10002 Rev 10 133/136

135

Revision History STM32L151xE STM32L152xE

Date

27-Apr-2015

09-Feb-2016

Table 73. Document revision history (continued)

Revision Changes

Updated

Section 7: Package information

structure: Paragraph titles and paragraph heading level.

Updated Section : LQFP144 is a 144-pin 20 x 20 mm, low-profile quad flat package.

removing gate mark in Figure 45

and adding text for device orientation versus pin1 identifier.

Updated Section : LQFP100 is a 100-pin, 14 x 14 mm, low-profile quad flat package.

removing gate mark in Figure 36

and adding note for device orientation versus pin 1 identifier.

Updated

Section 7: Package information

for all other package device marking adding text in for device orientation versus pin 1 or ball A1 identifier.

Added

Figure 38: WLCSP104 recommended footprint

and Table 68:

WLCSP104 recommended PCB design rules

Updated

Table 8: STM32L151xE and STM32L152xE pin definitions

ADC inputs.

Updated

Table 16: Embedded internal reference voltage

temperature coefficient at 100ppm/°C.

and table footnote 3: “guaranteed by design” changed by “guaranteed by characterization results”.

Updated

Table 63: Comparator 2 characteristics new maximum

threshold voltage temperature coefficient at 100ppm/°C.

Updated cover page putting eight SPIs in the peripheral communication interface list.

Updated

Table 2: Ultra-low-power STM32L151xE and STM32L152xE device features and peripheral counts SPI and I2S lines.

Updated

Table 39: ESD absolute maximum ratings

CDM class II by class C3 and C4 depending of the package.

Updated all the notes, removing ‘not tested in production’.

Updated

Table 10: Voltage characteristics adding note about V

REFpin.

Updated Table 5: Functionalities depending on the working mode (from

Run/active down to standby)

LSI and LSE functionalities putting “Y” in

Standby mode.

134/136 DS10002 Rev 10

STM32L151xE STM32L152xE Revision History

Date

25-Aug-2017

20-Apr-2021

Table 73. Document revision history (continued)

Revision Changes

Updated

Table 42: I/O static characteristics pull-up and pull-down

values.

Updated

Table 45: NRST pin characteristics pull-up values.

Updated

Section 7: Package information

adding information about other optional marking or inset/upset marks.

Updated note 1 below all the package device marking figures.

Updated

Section 7: Package information

replacing “Marking of engineering samples” by “device marking”.

Updated

Nested vectored interrupt controller (NVIC)

in Section 3.2:

Arm

Cortex

-M3 core with MPU about process state automatically

saved.

Updated

Table 3: Functionalities depending on the operating power supply range

removing I/O operation column and adding note about

GPIO speed.

Updated

Table 41: I/O current injection susceptibility

note by ‘injection is not possible’.

Updated

Figure 19: Recommended NRST pin protection note about

the 0.1uF capacitor.

Updated

Table 58: DAC characteristics

resistive load.

Updated

Section 3.1: Low-power modes Low-power run mode (MSI)

RC oscillator clock.

Updated

Table 5: Functionalities depending on the working mode

(from Run/active down to standby)

disabling I2C functionality in Lowpower Run and Low-power Sleep modes.

Updated:

– Cover features.

–

Section 1: Introduction adding reference to errata sheet.

–

Section 4: Pin descriptions .

–

Figure 8: Memory map

–

Figure 27: ADC accuracy characteristics .

–

Section 7: Package information

DS10002 Rev 10 135/136

135

STM32L151xE STM32L152xE

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on

ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks .

All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

136/136 DS10002 Rev 10

Advertentie

Ultra-low-power 32-bit MCU Arm

®

-based Cortex

®

-M3 with 512KB

Flash, 80KB SRAM, 16KB EEPROM, LCD, USB, ADC, DAC

-

Features

Includes ST state-of-the-art patented technology

Contents

List of tables

List of figures

1 Introduction

2 Description

2.2

Ultra-low-power device continuum

3.2 Arm

®

Cortex

®

-M3 core with MPU

Nested vectored interrupt controller (NVIC)

3.3

Reset and supply management

External interrupt/event controller (EXTI)

3.7 Memories

3.8 DMA (direct memory access)

3.10 ADC (analog-to-digital converter)

3.11 DAC (digital-to-analog converter)

3.16 Timers and watchdogs

TIM2, TIM3, TIM4, TIM5

TIM10, TIM11 and TIM9

3.18 CRC (cyclic redundancy check) calculation unit

Alternate functions

6.2 Absolute maximum ratings

∞

On-chip peripheral current consumption

High-speed external user clock generated from an external source

Low-speed external user clock generated from an external source

High-speed external clock generated from a crystal/ceramic resonator

Low-speed external clock generated from a crystal/ceramic resonator

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Multi-speed internal (MSI) RC oscillator

The characteristics are given at T

= -40 to 105 °C unless otherwise specified.

RAM memory

Flash memory and data EEPROM

Functional EMS (electromagnetic susceptibility)

Designing hardened software to avoid noise problems

Electromagnetic Interference (EMI)

Electrostatic discharge (ESD)

Static latch-up

Functional susceptibility to I/O current injection

General input/output characteristics

Output driving current

Output voltage levels

Input/output AC characteristics

I

C interface characteristics

SPI characteristics

USB characteristics

I2S characteristics

General PCB design guidelines

7.1

LQFP64 package information

LQFP64 device marking

LQFP100 device marking

7.3 WLCSP104 package information

WLCSP104 device marking

7.4 UFBGA132 package information

UFBGA132 device marking

LQFP144 device marking

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