supply pin during ADC conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

Figure 27.

12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Figure 28.

LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 109

Figure 29.

LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

Figure 30.

LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package top view example . . . . . . 111

Figure 31.

WLCSP104, 0.4 mm pitch wafer level chip scale package outline . . . . . . . . . . . . . . . . . . 112

Figure 32.

WLCSP104, 0.4 mm pitch wafer level chip scale package recommended footprint. . . . . 113

Figure 33.

WLCSP104, 0.4 mm pitch wafer level chip scale package top view example . . . . . . . . . 114

Figure 34.

Thermal resistance suffix 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Figure 35.

Thermal resistance suffix 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

DocID027268 Rev 4 7/120

Introduction

1 Introduction

STM32L162VD-X

This datasheet provides the ordering information and mechanical device characteristics of the STM32L162VD-X ultra-low-power Arm ® Cortex ® -M3 based microcontroller product line.

The STM32L162VD-X device is a microcontroller with a Flash memory density of

384 Kbytes.

The ultra-low-power STM32L162VD-X is available in 2 different package types: from 100 pins to 104 pins. Depending on the device chosen, different sets of peripherals are included, the description below gives an overview of the complete range of peripherals proposed in this device.

These features make the ultra-low-power STM32L162VD-X microcontroller suitable for a wide range of applications:

• Medical and handheld equipment

• Application control and user interface

• PC peripherals, gaming, GPS and sport equipment

• Alarm systems, wired and wireless sensors, video intercom

• Utility metering

This STM32L162VD-X datasheet should be read in conjunction with the STM32L1xxxx reference manual (RM0038). The application note “Getting started with STM32L1xxxx hardware development” (AN3216) gives a hardware implementation overview. Both documents are available from the STMicroelectronics website www.st.com

For information on the Arm

Cortex

-M3 core please refer to the Arm

Cortex

-M3

technical reference manual, available from the www.arm.com website. Figure 1

shows the general block diagram of the device.

8/120 DocID027268 Rev 4

STM32L162VD-X

2 Description

Description

The ultra-low-power STM32L162VD-X device incorporates the connectivity power of the universal serial bus (USB) with the high-performance Arm ® Cortex ® -M3 32-bit RISC core operating at a frequency of 32 MHz (33.3 DMIPS), a memory protection unit (MPU), highspeed embedded memories (Flash memory up to 384 Kbytes and RAM up to 80 Kbytes), and an extensive range of enhanced I/Os and peripherals connected to two APB buses.

The STM32L162VD-X device offers two operational amplifiers, one 12-bit ADC, two DACs, two ultra-low-power comparators, AES, one general-purpose 32-bit timer, six generalpurpose 16-bit timers and two basic timers, which can be used as time bases.

Moreover, the STM32L162VD-X device contains standard and advanced communication interfaces: up to two I2Cs, three SPIs, two I2S, two UARTs, three USARTs and an USB. The

STM32L162VD-X device offers up to 23 capacitive sensing channels to simply add a touch sensing functionality to any application.

It also includes a real-time clock and a set of backup registers that remain powered in

Standby mode.

Finally, the integrated LCD controller has a built-in LCD voltage generator that allows to drive up to 8 multiplexed LCDs with the contrast independent of the supply voltage.

The ultra-low-power STM32L162VD-X device operates from a 1.8 to 3.6 V power supply

(down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power supply without

BOR option. It is available in the -40 to +85 °C and -40 to +105 °C temperature ranges. A comprehensive set of power-saving modes allows the design of low-power applications.

DocID027268 Rev 4 9/120

Description STM32L162VD-X

10/120

Table 1. Ultra-low-power STM32L162VD-X device features

and peripheral counts

Peripheral STM32L162VD-X

Flash (Kbytes)

Data EEPROM (Kbytes)

RAM (Kbytes)

AES

Timers

32 bit

Generalpurpose

Basic

SPI

Communication interfaces

USART

USB

GPIOs

384

8(3)

(1)

Operational amplifiers

12-bit synchronized ADC

Number of channels

12-bit DAC

Number of channels

LCD

COM x SEG

Comparators

4x44 or 8x40

Capacitive sensing channels 23

Max. CPU frequency 32 MHz

Operating voltage

Operating temperatures

Packages

1.8 V to 3.6 V (down to 1.65 V at power-down) with BOR option

1.65 V to 3.6 V without BOR option

Ambient operating temperature: -40 °C to 85 °C / -40 °C to 105 °C

Junction temperature: –40 to + 110 °C

LQFP100,

WLCSP104

1. 5 SPIs are USART configured in synchronous mode emulating SPI master.

DocID027268 Rev 4

STM32L162VD-X

Note: There is no FSMC and SDIO peripheral.

Description

2.2

Note:

Ultra-low-power device continuum

The ultra-low-power family offers a large choice of cores and features. From proprietary 8bit to up to Cortex-M3, including the Cortex-M0+, the STM32Lx series are the best choice to answer the user needs, in terms of ultra-low-power features. The STM32 ultra-low-power series are the best fit, for instance, for gas/water meter, keyboard/mouse or fitness and healthcare, wearable applications. Several built-in features like LCD drivers, dual-bank memory, Low-power run mode, op-amp, AES 128-bit, DAC, USB crystal-less and many others will clearly allow to build very cost-optimized applications by reducing BOM.

STMicroelectronics as a reliable and long-term manufacturer ensures as much as possible the pin-to-pin compatibility between any STM8Lxxxxx and STM32Lxxxxx devices and between any of the STM32Lx and STM32Fx series. Thanks to this unprecedented scalability, the old applications can be upgraded to respond to the latest market features and efficiency demand.

2.2.1 Performance

All the families incorporate highly energy-efficient cores with both Harvard architecture and pipelined execution: advanced STM8 core for STM8L families and Arm Cortex-M3 core for

STM32L family. In addition specific care for the design architecture has been taken to optimize the mA/DMIPS and mA/MHz ratios.

This allows the ultra-low-power performance to range from 5 up to 33.3 DMIPs.

STM8L15xxx, STM32L15xxx and STM32L162xx share identical peripherals which ensure a very easy migration from one family to another:

• Analog peripherals: ADC, DAC and comparators

• Digital peripherals: RTC and some communication interfaces

To offer flexibility and optimize performance, the STM8L15xxx, STM32L15xxx and

STM32L162xx family uses a common architecture:

• Same power supply range from 1.65 V to 3.6 V

• Architecture optimized to reach ultra-low consumption both in low-power modes and

Run mode

• Fast startup strategy from low-power modes

• Flexible system clock

• Ultrasafe reset: same reset strategy including power-on reset, power-down reset, brownout reset and programmable voltage detector

2.2.4 Features

ST ultra-low-power continuum also lies in feature compatibility:

• More than 15 packages with pin count from 20 to 144 pins and size down to 3 x 3 mm

• Memory density ranging from 2 to 512 Kbytes

DocID027268 Rev 4 11/120

Functional overview STM32L162VD-X

12/120

Figure 1. Ultra-low-power STM32L162VD-X block diagram

TRACECK, TRACED0, TRACED1, TRACED2, TRACED4

PA[15:0]

PB[15:0]

PC[15:0]

PD[15:0]

PE[15:0]

PH[2:0]

PF[15:0]

PG[15:0]

115 AF

MOSI, MISO,

SCK, NSS as AF

RX, TX, CTS, RTS,

SmartCard as AF

40 AF

VDDREF_ADC*

VSSREF_ADC*

NJTRST

JTDI

JTCK / SWCLK

JTMS / SWDAT

JTDO as AF

VDDA /

VSSA

COMPx_INx

2 channels

1 channel

JTAG & SW pbus ibus

M3 CPU

Fmax: 32 MHz

Dbus

MPU

NVIC

GP DMA 7 channels

GP DMA2 5 channels

System

Supply monitoring

BOR / Bgap

PVD

Cap. sens

GP Comp

PU / PD

BOR

Int

@VDDA

GPIO PORT A

GPIO PORT B

GPIO PORT C

GPIO PORT D

GPIO PORT E

GPIO PORT H

GPIO PORT F

GPIO PORT G

EXT.IT

WKUP

SPI1

AES

AHB/APB2 AHB/APB1

Trace Controller ETM

VDD CORE

@ VDD 33

POWER

VOLT. REG.

EEPROM 64 bit

384 KB PROGRAM

16 KB DATA

8KB BOOT

DUAL BANK

SRAM 80K

PDR

Vref

Supply monitoring

PDR

@ VDD33

XTAL OSC

1-24 MHz

AHBPCLK

APBPCLK

HCLK

FCLK

@VDDA

PLL &

Clock

Mgmt

WDG 32K

Standby interface RC HSI

RC MSI

XTAL 32 kHz

RTC V2

AWU

Reg 128

Backup interface

@VDD33

Backup

LCD Booster

TIMER2

TIMER3

TIMER4

TIMERS (32 bits)

USART2

USART3

USART4

USART5

VDD33=1.65V to 3.6V

Vss

NRST

OSC_IN

OSC_OUT

OSC32_IN

OSC32_OUT

RTC_OUT

TAMPER

VLCD = 2.5V to 3.6V

USART1

@VDDA

12bit ADC

Temp sensor

General purpose timers

TIMER9

TIMER10

TIMER11

USB SRAM 512 B

WinWATCHDOG

TIMER6

TIMER7

OPAMP1

OPAMP2

I2C1

I2C2

USB2.0 FS device

Cap. sensing

LCD 8x40

@VDDA

12bit DAC1

12bit DAC2

4 channels

RX, TX, CTS, RTS,

SmartCard as AF

RX, TX, CTS, RTS,

SmartCard as AF

RX, TX as AF

MOSI, MISO, SCK,NSS,WS, CK

MCK, SD as AF

MOSI, MISO, SCK,NSS,WS, CK

MCK, SD as AF

SCL, SDA

As AF

SCL, SDA, SMBus, PMBus

As AF

USB_DP

USB_DM

SEGx

COMx

DAC_OUT1 as AF

DAC_OUT2 as AF

VINP

VINM

VOUT

VINP

VINM

VOUT

MSv36647V2

DocID027268 Rev 4

STM32L162VD-X Functional overview

The ultra-low-power STM32L162VD-X device supports dynamic voltage scaling to optimize its power consumption in run mode. The voltage from the internal low-drop regulator that supplies the logic can be adjusted according to the system’s maximum operating frequency and the external voltage supply.

There are three power consumption ranges:

• Range 1 (V

range limited to 1.71 V - 3.6 V), with the CPU running at up to 32 MHz

• Range 2 (full V

range), with a maximum CPU frequency of 16 MHz

• Range 3 (full V

range), with a maximum CPU frequency limited to 4 MHz (generated only with the multispeed internal RC oscillator clock source)

Seven low-power modes are provided to achieve the best compromise between low-power consumption, short startup time and available wakeup sources:

• Sleep mode

In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake up the CPU when an interrupt/event occurs. Sleep mode power consumption at

16 MHz is about 1 mA with all peripherals off.

• Low-power run mode

This mode is achieved with the multispeed internal (MSI) RC oscillator set to the MSI range 0 or MSI range 1 clock range (maximum 131 kHz), execution from SRAM or

Flash memory, and internal regulator in low-power mode to minimize the regulator's operating current. In low-power run mode, the clock frequency and the number of enabled peripherals are both limited.

• Low-power sleep mode

This mode is achieved by entering Sleep mode with the internal voltage regulator in

Low-power mode to minimize the regulator’s operating current. In Low-power sleep mode, both the clock frequency and the number of enabled peripherals are limited; a typical example would be to have a timer running at 32 kHz.

When wakeup is triggered by an event or an interrupt, the system reverts to the run mode with the regulator on.

• Stop mode with RTC

Stop mode achieves the lowest power consumption while retaining the RAM and register contents and real time clock. All clocks in the V

CORE

domain are stopped, the

PLL, MSI RC, HSI RC and HSE crystal oscillators are disabled. The LSE or LSI is still running. The voltage regulator is in the low-power mode.

The device can be woken up from Stop mode by any of the EXTI line, in 8 µs. The EXTI line source can be one of the 16 external lines. It can be the PVD output, the

Comparator 1 event or Comparator 2 event (if internal reference voltage is on), it can be the RTC alarm(s), the USB wakeup, the RTC tamper events, the RTC timestamp event or the RTC wakeup.

DocID027268 Rev 4 13/120

Functional overview

Note:

STM32L162VD-X

• Stop mode without RTC

Stop mode achieves the lowest power consumption while retaining the RAM and register contents. All clocks are stopped, the PLL, MSI RC, HSI and LSI RC, LSE and

HSE crystal oscillators are disabled. The voltage regulator is in the low-power mode.

The device can be woken up from Stop mode by any of the EXTI line, in 8 µs. The EXTI line source can be one of the 16 external lines. It can be the PVD output, the

Comparator 1 event or Comparator 2 event (if internal reference voltage is on). It can also be wakened by the USB wakeup.

• Standby mode with RTC

Standby mode is used to achieve the lowest power consumption and real time clock.

The internal voltage regulator is switched off so that the entire V

CORE

domain is powered off. The PLL, MSI RC, HSI RC and HSE crystal oscillators are also switched off. The LSE or LSI is still running. After entering Standby mode, the RAM and register contents are lost except for registers in the Standby circuitry (wakeup logic, IWDG,

RTC, LSI, LSE Crystal 32K osc, RCC_CSR).

The device exits Standby mode in 60 µs when an external reset (NRST pin), an IWDG reset, a rising edge on one of the three WKUP pins, RTC alarm (Alarm A or Alarm B),

RTC tamper event, RTC timestamp event or RTC Wakeup event occurs.

• Standby mode without RTC

Standby mode is used to achieve the lowest power consumption. The internal voltage regulator is switched off so that the entire V

CORE

domain is powered off. The PLL, MSI

RC, HSI and LSI RC, HSE and LSE crystal oscillators are also switched off. After entering Standby mode, the RAM and register contents are lost except for registers in the Standby circuitry (wakeup logic, IWDG, RTC, LSI, LSE Crystal 32K osc,

RCC_CSR).

The device exits Standby mode in 60 µs when an external reset (NRST pin) or a rising edge on one of the three WKUP pin occurs.

The RTC, the IWDG, and the corresponding clock sources are not stopped automatically by entering Stop or Standby mode.

Table 2. Functionalities depending on the operating power supply range

Functionalities depending on the operating power supply range

(1)

Operating power supply range

DAC and ADC operation

USB

Dynamic voltage scaling range

= V

DDA

= 1.65 to 1.71 V Not functional Not functional

DDA

= 1.71 to 1.8 V

(2)

DDA

= 1.8 to 2.0 V

Not functional Not functional

Conversion time up to 500 Ksps

Not functional

Range 2 or Range 3

Range 1, Range 2 or

Range 3

Range 1, Range 2 or

Range 3

14/120 DocID027268 Rev 4

STM32L162VD-X Functional overview

Table 2. Functionalities depending on the operating power supply range (continued)

Functionalities depending on the operating power supply range

(1)

Operating power supply range

DAC and ADC operation

USB

Dynamic voltage scaling range

DDA

= 2.0 to 2.4 V

= 2.4 to 3.6 V

Conversion time up to 500 Ksps

Conversion time up to 1 Msps

Functional

(3)

Range 1, Range 2 or

Range 3

Range 1, Range 2 or

Range 3

1. The GPIO speed also depends from VDD voltage and the user has to refer to

Table 43: I/O AC characteristics for more information about I/O speed.

2. CPU frequency changes from initial to final must respect “F

CPU

initial < 4*F

CPU

final” to limit V

CORE

drop changes. For example to switch from 4.2 MHz to 32 MHz, the user can switch from 4.2 MHz to 16 MHz, wait 5 µs, then switch from 16 MHz to 32 MHz.

3. Should be USB compliant from I/O voltage standpoint, the minimum V

is 3.0 V.

Table 3. CPU frequency range depending on dynamic voltage scaling

CPU frequency range Dynamic voltage scaling range

16 MHz to 32 MHz (1ws)

32 kHz to 16 MHz (0ws)

8 MHz to 16 MHz (1ws)

32 kHz to 8 MHz (0ws)

2.1MHz to 4.2 MHz (1ws)

32 kHz to 2.1 MHz (0ws)

Range 1

Range 2

Range 3

DocID027268 Rev 4 15/120

Functional overview STM32L162VD-X

CPU

Flash

RAM

Backup Registers

EEPROM

Brown-out rest

(BOR)

DMA

Programmable

Voltage Detector

(PVD)

Power On Reset

(POR)

Power Down Rest

(PDR)

High Speed

Internal (HSI)

High Speed

External (HSE)

Low Speed Internal

(LSI)

Low Speed

External (LSE)

Multi-Speed

Internal (MSI)

Inter-Connect

Controller

RTC

RTC Tamper

Auto WakeUp

(AWU)

LCD

USB

USART

SPI

I2C

Table 4. Functionalities depending on the working mode (from Run/active down to standby)

Stop Standby

Ips Run/Active Sleep

Lowpower

Run

Lowpower

Sleep -

Wakeup capability

(1)

16/120 DocID027268 Rev 4

STM32L162VD-X Functional overview

Table 4. Functionalities depending on the working mode (from Run/active down to standby) (continued)

Stop Standby

Ips Run/Active Sleep

Lowpower

Run

Lowpower

Sleep -

Wakeup capability

ADC

DAC

Tempsensor

OP amp

Comparators

16-bit and 32-bit

Timers

IWDG

WWDG

Touch sensing

Systic Timer

GPIOs

Wakeup time to

Run mode

0 µs

0.4 µs

3 µs

46 µs

< 8 µs

3 pins

58 µs

Consumption

=1.8 to 3.6 V

(Typ)

Down to 195

µA/MHz (from

Flash)

Down to 38

µA/MHz (from

Flash)

Down to

11 µA

Down to

4.6 µA

0.53 µA

(no RTC)

=1.8V

1.2 µA

(with RTC)

=1.8V

0.56 µA

(no RTC)

=3.0V

1.4 µA

(with RTC)

=3.0V

1. The startup on communication line wakes the CPU which was made possible by an EXTI, this induces a delay before entering run mode.

0.285 µA

(no RTC)

=1.8V

0.97 µA

(with RTC)

=1.8V

0.29 µA

(no RTC)

=3.0V

1.11 µA

(with RTC)

=3.0V

3.2 Arm

®

Cortex

®

-M3 core with MPU

The Arm ® Cortex ® -M3 processor is the industry leading processor for embedded systems. It has been developed to provide a low-cost platform that meets the needs of MCU implementation, with a reduced pin count and low-power consumption, while delivering outstanding computational performance and an advanced system response to interrupts.

The Arm ® Cortex ® -M3 32-bit RISC processor features exceptional code-efficiency, delivering the high-performance expected from an Arm core in the memory size usually associated with 8- and 16-bit device.

DocID027268 Rev 4 17/120

Functional overview STM32L162VD-X

The memory protection unit (MPU) improves system reliability by defining the memory attributes (such as read/write access permissions) for different memory regions. It provides up to eight different regions and an optional predefined background region.

Owing to its embedded Arm core, the STM32L162VD-X device is compatible with all Arm tools and software.

Nested vectored interrupt controller (NVIC)

The ultra-low-power STM32L162VD-X device embeds a nested vectored interrupt controller able to handle up to 56 maskable interrupt channels (not including the 16 interrupt lines of

Arm ® Cortex ® -M3) and 16 priority levels.

• Closely coupled NVIC gives low-latency interrupt processing

• Interrupt entry vector table address passed directly to the core

• Closely coupled NVIC core interface

• Allows early processing of interrupts

• Processing of late arriving , higher-priority interrupts

• Support for tail-chaining

• Processor state automatically saved on interrupt entry, and restored on interrupt exit, with no instruction overhead

This hardware block provides flexible interrupt management features with minimal interrupt latency.

3.3

3.3.1

3.3.2

18/120

Reset and supply management

Power supply schemes

• V

= 1.65 to 3.6 V: external power supply for I/Os and the internal regulator. Provided externally through V

pins.

• V

SSA

, V

DDA

= 1.65 to 3.6 V: external analog power supplies for ADC, reset blocks, RCs and PLL (minimum voltage to be applied to V

DDA and V

SSA must be connected to V

DD and V

SS is 1.8 V when the ADC is used). V

, respectively.

DDA

Power supply supervisor

The device has an integrated ZEROPOWER power-on reset (POR)/power-down reset

(PDR) that can be coupled with a brownout reset (BOR) circuitry.

The device exists in two versions:

• The version with BOR activated at power-on operates between 1.8 V and 3.6 V.

• The other version without BOR operates between 1.65 V and 3.6 V.

After the V

threshold is reached (1.65 V or 1.8 V depending on the BOR which is active or not at power-on), the option byte loading process starts, either to confirm or modify default thresholds, or to disable the BOR permanently: in this case, the V

1.65 V (whatever the version, BOR active or not, at power-on).

min value becomes

When BOR is active at power-on, it ensures proper operation starting from 1.8 V whatever the power ramp-up phase before it reaches 1.8 V. When BOR is not active at power-up, the power ramp-up should guarantee that 1.65 V is reached on V

DD the POR area.

at least 1 ms after it exits

DocID027268 Rev 4

STM32L162VD-X

Note:

Functional overview

Five BOR thresholds are available through option bytes, starting from 1.8 V to 3 V. To reduce the power consumption in Stop mode, it is possible to automatically switch off the internal reference voltage (V

REFINT

) in Stop mode. The device remains in reset mode when

DD is below a specified threshold, V reset circuit.

POR/PDR or V

BOR

, without the need for any external

The start-up time at power-on is typically 3.3 ms when BOR is active at power-up, the startup time at power-on can be decreased down to 1 ms typically for a device with BOR inactive at power-up.

The device features an embedded programmable voltage detector (PVD) that monitors the

DDA

power supply and compares it to the V

PVD

threshold. This PVD offers 7 different levels between 1.85 V and 3.05 V, chosen by software, with a step around 200 mV. An interrupt can be generated when V

DDA

is higher than the V

PVD

DDA

drops below the V

PVD

threshold and/or when

threshold. The interrupt service routine can then generate a warning message and/or put the MCU into a safe state. The PVD is enabled by software.

The regulator has three operation modes: main (MR), low-power (LPR) and power down.

• MR is used in Run mode (nominal regulation)

• LPR is used in the Low-power run, Low-power sleep and Stop modes

• Power down is used in Standby mode. The regulator output is high impedance, the kernel circuitry is powered down, inducing zero consumption but the contents of the registers and RAM are lost except for the standby circuitry (wakeup logic, IWDG, RTC,

LSI, LSE crystal 32K osc, RCC_CSR).

At startup, boot pins are used to select one of three boot options:

• Boot from Flash memory

• Boot from System memory

• Boot from embedded RAM

The boot from Flash usually boots at the beginning of the Flash (bank 1). An additional boot mechanism is available through user option byte, to allow booting from bank 2 when bank 2 contains valid code. This dual boot capability can be used to easily implement a secure field software update mechanism.

The boot loader is located in System memory. It is used to reprogram the Flash memory by using USART1, USART2 or USB. See Application note “STM32 microcontroller system memory boot mode” (AN2606) for details.

DocID027268 Rev 4 19/120

Functional overview STM32L162VD-X

The clock controller distributes the clocks coming from different oscillators to the core and the peripherals. It also manages clock gating for low-power modes and ensures clock robustness. It features:

• Clock prescaler : to get the best trade-off between speed and current consumption, the clock frequency to the CPU and peripherals can be adjusted by a programmable prescaler.

• Safe clock switching : clock sources can be changed safely on the fly in run mode through a configuration register.

• Clock management : to reduce power consumption, the clock controller can stop the clock to the core, individual peripherals or memory.

• System clock source : three different clock sources can be used to drive the master clock SYSCLK:

– 1-24 MHz high-speed external crystal (HSE), that can supply a PLL

– 16 MHz high-speed internal RC oscillator (HSI), trimmable by software, that can supply a PLL

– Multispeed internal RC oscillator (MSI), trimmable by software, able to generate 7 frequencies (65 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.1 MHz, 4.2 MHz).

When a 32.768 kHz clock source is available in the system (LSE), the MSI frequency can be trimmed by software down to a ±0.5% accuracy.

• Auxiliary clock source : two ultra-low-power clock sources that can be used to drive the LCD controller and the real-time clock:

– 32.768 kHz low-speed external crystal (LSE)

– 37 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.

The LSI clock can be measured using the high-speed internal RC oscillator for greater precision.

• RTC and LCD clock sources: the LSI, LSE or HSE sources can be chosen to clock the RTC and the LCD, whatever the system clock.

• USB clock source: the embedded PLL has a dedicated 48 MHz clock output to supply the USB interface.

• Startup clock : after reset, the microcontroller restarts by default with an internal 2 MHz clock (MSI). The prescaler ratio and clock source can be changed by the application program as soon as the code execution starts.

• Clock security system (CSS): this feature can be enabled by software. If a HSE clock failure occurs, the master clock is automatically switched to HSI and a software interrupt is generated if enabled.

• Clock-out capability (MCO: microcontroller clock output): it outputs one of the internal clocks for external use by the application.

Several prescalers allow the configuration of the AHB frequency, each APB (APB1 and

APB2) domains. The maximum frequency of the AHB and the APB domains is 32 MHz. See

Figure 2 for details on the clock tree.

20/120 DocID027268 Rev 4

STM32L162VD-X Functional overview

Figure 2. Clock tree

Standby supplied voltage domain enable

Watchdog

LSI RC LSI tempo

Watchdog

LSE OSC LSE tempo

RTC enable

RTC

Radio Sleep Timer enable

Radio Sleep Timer

LS LS LS LS

@V33

MSI RC level shifters

DDCORE

@V33

HSI RC level shifters

DDCORE

@V33

HSE

OSC level shifters

DDCORE

1 MHz

/ 2,4,8,16

@V33

1 MHz clock detector

LS ck_lsi ck_lse ck_msi ck_hsi ck_hse ck_pllin

@V33 ck_pll

PLL

X 3,4,6,8,12

16,24,32,48

/ 2, 3, 4 level shifters

HSE present or not

DDCORE usben and (not deepsleep)

CK_USB48

Clock source control

CK_LCD

LCD enable

CK_ADC

ADC enable

/ 1,2,4,8,16

MCO not deepsleep

CK_PWR not deepsleep

CK_FCLK

System clock not (sleep or deepsleep not (sleep or deepsleep)

/ 8

AHB prescaler

/ 1,2,..512

APB1 APB2 prescaler prescaler

/ 1,2,4,8,16 / 1,2,4,8,16

CK_CPU

CK_TIMSYS

CK_TIMTGO

CK_APB1

CK_APB2 timer9en and (not deepsleep) apb1 periphen and (not deepsleep) if (APB1 presc = 1)x1 else x2 apb2 periphen and (not deepsleep)

MS18583V1

DocID027268 Rev 4 21/120

Functional overview STM32L162VD-X

The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain the sub-second, second, minute, hour (12/24 hour), week day, date, month, year, in BCD

(binary-coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are made automatically. The RTC provides two programmable alarms and programmable periodic interrupts with wakeup from Stop and Standby modes.

The programmable wakeup time ranges from 120 µs to 36 hours.

The RTC can be calibrated with an external 512 Hz output, and a digital compensation circuit helps reduce drift due to crystal deviation.

The RTC can also be automatically corrected with a 50/60Hz stable powerline.

The RTC calendar can be updated on the fly down to sub second precision, which enables network system synchronization.

A time stamp can record an external event occurrence, and generates an interrupt.

There are thirty-two 32-bit backup registers provided to store 128 bytes of user application data. They are cleared in case of tamper detection.

Three pins can be used to detect tamper events. A change on one of these pins can reset backup register and generate an interrupt. To prevent false tamper event, like ESD event, these three tamper inputs can be digitally filtered.

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the

GPIO pins are shared with digital or analog alternate functions, and can be individually remapped using dedicated AFIO registers. All GPIOs are high current capable. The alternate function configuration of I/Os can be locked if needed following a specific sequence in order to avoid spurious writing to the I/O registers. The I/O controller is connected to the AHB with a toggling speed of up to 16 MHz.

External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 24 edge detector lines used to generate interrupt/event requests. Each line can be individually configured to select the trigger event

(rising edge, falling edge, both) and can be masked independently. A pending register maintains the status of the interrupt requests. The EXTI can detect an external line with a pulse width shorter than the Internal APB2 clock period. Up to 115 GPIOs can be connected to the 16 external interrupt lines. The 8 other lines are connected to RTC, PVD, USB, comparator events or capacitive sensing acquisition.

22/120 DocID027268 Rev 4

STM32L162VD-X Functional overview

3.7 Memories

The STM32L162VD-X device has the following features:

• 80 Kbytes of embedded RAM accessed (read/write) at CPU clock speed with 0 wait states. With the enhanced bus matrix, operating the RAM does not lead to any performance penalty during accesses to the system bus (AHB and APB buses).

• The non-volatile memory is divided into three arrays:

– 384 Kbytes of embedded Flash program memory

– 16 Kbytes of data EEPROM

– Options bytes

Flash program and data EEPROM are divided into two banks, this enables writing in one bank while running code or reading data in the other bank.

The options bytes are used to write-protect or read-out protect the memory (with 4

Kbytes granularity) and/or readout-protect the whole memory with the following options:

– Level 0: no readout protection

– Level 1: memory readout protection, the Flash memory cannot be read from or written to if either debug features are connected or boot in RAM is selected

– Level 2: chip readout protection, debug features (Arm Cortex-M3 JTAG and serial wire) and boot in RAM selection disabled (JTAG fuse)

The whole non-volatile memory embeds the error correction code (ECC) feature.

3.8 DMA (direct memory access)

The flexible 12-channel, general-purpose DMA is able to manage memory-to-memory, peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports circular buffer management, avoiding the generation of interrupts when the controller reaches the end of the buffer.

Each channel is connected to dedicated hardware DMA requests, with software trigger support for each channel. Configuration is done by software and transfer sizes between source and destination are independent.

The DMA can be used with the main peripherals: AES, SPI, I

C, USART, general-purpose timers, DAC and ADC.

DocID027268 Rev 4 23/120

Functional overview STM32L162VD-X

The LCD drives up to 8 common terminals and 44 segment terminals to drive up to 320 pixels.

• Internal step-up converter to guarantee functionality and contrast control irrespective of

. This converter can be deactivated, in which case the V the voltage to the LCD

LCD

pin is used to provide

• Supports static, 1/2, 1/3, 1/4 and 1/8 duty

• Supports static, 1/2, 1/3 and 1/4 bias

• Phase inversion to reduce power consumption and EMI

• Up to 8 pixels can be programmed to blink

• Unneeded segments and common pins can be used as general I/O pins

• LCD RAM can be updated at any time owing to a double-buffer

• The LCD controller can operate in Stop mode

3.10 ADC (analog-to-digital converter)

A 12-bit analog-to-digital converters is embedded into STM32L162VD-X device with up to

40 external channels, performing conversions in single-shot or scan mode. In scan mode, automatic conversion is performed on a selected group of analog inputs with up to 28 external channels in a group.

The ADC can be served by the DMA controller.

An analog watchdog feature allows very precise monitoring of the converted voltage of one, some or all scanned channels. An interrupt is generated when the converted voltage is outside the programmed thresholds.

The events generated by the general-purpose timers (TIMx) can be internally connected to the ADC start triggers, to allow the application to synchronize A/D conversions and timers.

An injection mode allows high priority conversions to be done by interrupting a scan mode which runs in as a background task.

The ADC includes a specific low-power mode. The converter is able to operate at maximum speed even if the CPU is operating at a very low frequency and has an auto-shutdown function. The ADC’s runtime and analog front-end current consumption are thus minimized whatever the MCU operating mode.

24/120

The temperature sensor (TS) generates a voltage V

SENSE temperature.

that varies linearly with

The temperature sensor is internally connected to the ADC_IN16 input channel which is used to convert the sensor output voltage into a digital value.

The sensor provides good linearity but it has to be calibrated to obtain good overall accuracy of the temperature measurement. As the offset of the temperature sensor varies from chip to chip due to process variation, the uncalibrated internal temperature sensor is suitable for applications that detect temperature changes only.

To improve the accuracy of the temperature sensor measurement, each device is individually factory-calibrated by ST. The temperature sensor factory calibration data are

DocID027268 Rev 4

STM32L162VD-X Functional overview

stored by ST in the system memory area, accessible in read-only mode. See Table 59:

Temperature sensor calibration values .

3.10.2 Internal voltage reference (V

REFINT

)

The internal voltage reference (V

REFINT

ADC and Comparators. V

REFINT enables accurate monitoring of the V

) provides a stable (bandgap) voltage output for the

is internally connected to the ADC_IN17 input channel. It

value (when no external voltage, VREF+, is available for ADC). The precise voltage of V

REFINT

is individually measured for each part by

ST during production test and stored in the system memory area. It is accessible in read-

only mode. See Table 14: Embedded internal reference voltage calibration values

3.11 DAC (digital-to-analog converter)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two analog voltage signal outputs. The chosen design structure is composed of integrated resistor strings and an amplifier in non-inverting configuration.

This dual digital Interface supports the following features:

• Two DAC converters: one for each output channel

• 8-bit or 12-bit monotonic output

• Left or right data alignment in 12-bit mode

• Synchronized update capability

• Noise-wave generation

• Triangular-wave generation

• Dual DAC channels, independent or simultaneous conversions

• DMA capability for each channel (including the underrun interrupt)

• External triggers for conversion

• Input reference voltage V

REF+

Eight DAC trigger inputs are used in the STM32L162VD-X device. The DAC channels are triggered through the timer update outputs that are also connected to different DMA channels.

The STM32L162VD-X device embeds two operational amplifiers with external or internal follower routing capability (or even amplifier and filter capability with external components).

When one operational amplifier is selected, one external ADC channel is used to enable output measurement.

The operational amplifiers feature:

• Low input bias current

• Low offset voltage

• Low-power mode

• Rail-to-rail input

DocID027268 Rev 4 25/120

Functional overview STM32L162VD-X

The STM32L162VD-X device embeds two comparators sharing the same current bias and reference voltage. The reference voltage can be internal or external (coming from an I/O).

• One comparator with fixed threshold

• One comparator with rail-to-rail inputs, fast or slow mode. The threshold can be one of the following:

– DAC output

– External I/O

– Internal reference voltage (V

REFINT

) or a sub-multiple (1/4, 1/2, 3/4)

Both comparators can wake up from Stop mode, and be combined into a window comparator.

The internal reference voltage is available externally via a low-power / low-current output buffer (driving current capability of 1 µA typical).

The system configuration controller provides the capability to remap some alternate functions on different I/O ports.

The highly flexible routing interface allows the application firmware to control the routing of different I/Os to the TIM2, TIM3 and TIM4 timer input captures. It also controls the routing of internal analog signals to ADC1, COMP1 and COMP2 and the internal reference voltage

REFINT

The STM32L162VD-X device provides a simple solution for adding capacitive sensing functionality to any application. This device offers up to 23 capacitive sensing channels distributed over 11 analog I/O groups. Both software and timer capacitive sensing acquisition modes are supported.

Capacitive sensing technology is able to detect the presence of a finger near a sensor which is protected from direct touch by a dielectric (glass, plastic...). The capacitive variation introduced by the finger (or any conductive object) is measured using a proven implementation based on a surface charge transfer acquisition principle. It consists of charging the sensor capacitance and then transferring a part of the accumulated charges into a sampling capacitor until the voltage across this capacitor has reached a specific threshold. The capacitive sensing acquisition only requires few external components to operate. This acquisition is managed directly by the GPIOs, timers and analog I/O groups

(see Section 3.14: System configuration controller and routing interface ).

Reliable touch sensing functionality can be quickly and easily implemented using the free

STM32L1xx STMTouch touch sensing firmware library.

3.16 AES

The AES Hardware Accelerator can be used to encrypt and decrypt data using the AES

26/120 DocID027268 Rev 4

STM32L162VD-X Functional overview algorithm (compatible with FIPS PUB 197, 2001 Nov 26).

• Key scheduler

• Key derivation for decryption

• 128-bit data block processed

• 128-bit key length

• 213 clock cycles to encrypt/decrypt one 128-bit block

• Electronic codebook (ECB), cypher block chaining (CBC), and counter mode (CTR) supported by hardware.

AES data flow can be served by 2ch (D

OUT

) of the DMA2 controller

3.17 Timers and watchdogs

The ultra-low-power STM32L162VD-X device includes seven general-purpose timers, two basic timers, and two watchdog timers.

Table 5 compares the features of the general-purpose and basic timers.

Timer

Counter resolution

Counter type

Table 5. Timer feature comparison

Prescaler factor

DMA request generation

Capture/compare channels

Complementary outputs

TIM2,

TIM3,

TIM4

16-bit

Up, down, up/down

Any integer between

1 and 65536

Yes 4 No

TIM5

TIM9

TIM10,

TIM11

TIM6,

TIM7

32-bit

16-bit

Up, down, up/down

Any integer between

1 and 65536

Any integer between

1 and 65536

Any integer between

1 and 65536

Any integer between

1 and 65536

Yes

(TIM2,

TIM11)

There are seven synchronizable general-purpose timers embedded in the STM32L162VD-X device (see

Table 5

for differences).

TIM2, TIM3, TIM4, TIM5

TIM2, TIM3, TIM4 are based on 16-bit auto-reload up/down counter. TIM5 is based on a 32bit auto-reload up/down counter. They include a 16-bit prescaler. They feature four independent channels each for input capture/output compare, PWM or one-pulse mode output. This gives up to 16 input captures/output compares/PWMs on the largest packages.

TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together or with the TIM10,

TIM11 and TIM9 general-purpose timers via the Timer Link feature for synchronization or

DocID027268 Rev 4 27/120

Functional overview STM32L162VD-X event chaining. Their counter can be frozen in debug mode. Any of the general-purpose timers can be used to generate PWM outputs.

TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation.

These timers are capable of handling quadrature (incremental) encoder signals and the digital outputs from 1 to 3 hall-effect sensors.

TIM10, TIM11 and TIM9

TIM10 and TIM11 are based on a 16-bit auto-reload upcounter. TIM9 is based on a 16-bit auto-reload up/down counter. They include a 16-bit prescaler. TIM10 and TIM11 feature one independent channel, whereas TIM9 has two independent channels for input capture/output compare, PWM or one-pulse mode output. They can be synchronized with the TIM2, TIM3,

TIM4, TIM5 full-featured general-purpose timers.

They can also be used as simple time bases and be clocked by the LSE clock source

(32.768 kHz) to provide time bases independent from the main CPU clock.

3.17.2 Basic timers (TIM6 and TIM7)

These timers are mainly used for DAC trigger generation. They can also be used as generic

16-bit time bases.

This timer is dedicated to the OS, but could also be used as a standard downcounter. It is based on a 24-bit downcounter with autoreload capability and a programmable clock source. It features a maskable system interrupt generation when the counter reaches 0.

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an independent 37 kHz internal RC and, as it operates independently of the main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog to reset the device when a problem occurs, or as a free-running timer for application timeout management. It is hardware- or software-configurable through the option bytes. The counter can be frozen in debug mode.

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It can be used as a watchdog to reset the device when a problem occurs. It is clocked from the main clock. It has an early warning interrupt capability and the counter can be frozen in debug mode.

28/120

Up to two I²C bus interfaces can operate in multimaster and slave modes. They can support standard and fast modes.

DocID027268 Rev 4

STM32L162VD-X Functional overview

They support dual slave addressing (7-bit only) and both 7- and 10-bit addressing in master mode. A hardware CRC generation/verification is embedded.

They can be served by DMA and they support SM Bus 2.0/PM Bus.

The three USART and two UART interfaces are able to communicate at speeds of up to 4

Mbit/s. They support IrDA SIR ENDEC and have LIN Master/Slave capability. The three

USARTs provide hardware management of the CTS and RTS signals and are ISO 7816 compliant.

All USART/UART interfaces can be served by the DMA controller.

3.18.3 Serial peripheral interface (SPI)

Up to three SPIs are able to communicate at up to 16 Mbits/s in slave and master modes in full-duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC generation/verification supports basic SD Card/MMC modes.

The SPIs can be served by the DMA controller.

Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can operate in master or slave mode, and can be configured to operate with a 16-/32-bit resolution as input or output channels. Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the I2S interfaces is/are configured in master mode, the master clock can be output to the external DAC/CODEC at 256 times the sampling frequency.

The I2Ss can be served by the DMA controller.

The STM32L162VD-X device embeds a USB device peripheral compatible with the USB full-speed 12 Mbit/s. The USB interface implements a full-speed (12 Mbit/s) function interface. It has software-configurable endpoint setting and supports suspend/resume. The dedicated 48 MHz clock is generated from the internal main PLL (the clock source must use a HSE crystal oscillator).

3.19 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit data word and a fixed generator polynomial.

Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.

DocID027268 Rev 4 29/120

Functional overview STM32L162VD-X

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug port that enables either a serial wire debug or a JTAG probe to be connected to the target.

The JTAG JTMS and JTCK pins are shared with SWDAT and SWCLK, respectively, and a specific sequence on the JTMS pin is used to switch between JTAG-DP and SW-DP.

The JTAG port can be permanently disabled with a JTAG fuse.

3.20.2 Embedded Trace Macrocell™

The Arm ® Embedded Trace Macrocell provides a greater visibility of the instruction and data flow inside the CPU core by streaming compressed data at a very high rate from the

STM32L162VD-X device through a small number of ETM pins to an external hardware trace port analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or any other high-speed channel. Real-time instruction and data flow activity can be recorded and then formatted for display on the host computer running debugger software.

TPA hardware is commercially available from common development tool vendors. It operates with third party debugger software tools.

30/120 DocID027268 Rev 4

STM32L162VD-X Pin descriptions

PE2

PE3

PE4

PE5

PE6-WKUP3

LCD

PC13-WKUP2

PC14-OSC32_IN

PC15-OSC32_OUT

VSS_5

VDD_5

PH0-OSC_IN

PH1-OSC_OUT

NRST

PC0

PC1

PC2

PC3

VSSA

VREF-

VREF+

VDDA

PA0-WKUP1

PA1

PA2

Figure 3. STM32L162VD-X LQFP100 pinout

LQFP100

VDD_2

VSS_2

PH2

PA13

PA12

PA11

PA10

PA9

PA8

PC9

PC8

PC7

PC6

PD15

PD14

PD13

PD12

PD11

PD10

PD9

PD8

PB15

PB14

PB13

PB12

69 ai15692c

1. This figure shows the package top view.

DocID027268 Rev 4 31/120

Pin descriptions STM32L162VD-X

Figure 4. STM32L162VD-X WLCSP104 ballout

2 3 4 5 6 7 8 9

VSS_2 PD0 PD4 PD7 PB4 PB5 BOOT0 PE1 VDD_3

PA15 PC12 PD5

VDD_2 PC11 PD2

PH2 VSS_2 PA14

PA11 PA12 PA13

PA9

PC7

PA10 PA8

PC8 PD15

PD6

PD3

PD1

PC10

PC9

PB3

PB6

PB8

PB7

PB9

PE2

PE0

VSS_3

PE3

PE6

WKUP3

VLCD

VDD_3

PE4

PE5

PC13

WKUP2

PC14

OSC32IN

PC15

OSC32OUT

VSS_5 VDD_5

PC0 NRST

PH0

OSCIN

PH1

OSCOUT

PD11 VDDA VREF+ PC3 PC2

PC6 PD13 PD12 PD8 PA6 PA3 VREFPC1

PD14

PD10

PB14

PD9 PB13

PB15 VDD_1

VSS_1 PB11

PB12

PE15

PE10

PE13

PB0

PB1

PA4

PA7

PA2

VSS_4

PE14 PE11 PE7 PC4 VDD_4

VSSA

PA0

WKUP1

PA1

VSS_1 PB10 PE12 PE9 PE8 PB2 PC5 PA5 VDD_4

MSv41009V1

1. This figure shows the package top view.

32/120 DocID027268 Rev 4

STM32L162VD-X Pin descriptions

Name

Table 6. Legend/abbreviations used in the pinout table

Abbreviation Definition

Pin name

Pin type

I/O structure

Unless otherwise specified in brackets below the pin name, the pin function during and after reset is the same as the actual pin name

Supply pin

Input only pin

I/O

Input / output pin

5 V tolerant I/O

Standard 3.3 V I/O

Dedicated BOOT0 pin

Pin functions

Notes

RST Bidirectional reset pin with embedded weak pull-up resistor

Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate functions

Functions selected through GPIOx_AFR registers

Additional functions

Functions directly selected/enabled through peripheral registers

Pins

Pin name

Table 7. STM32L162VD-X pin definitions

Pin functions

Main function

(2)

(after reset)

Alternate functions

Additional functions

1 D6 PE2 I/O FT

PE3

PE4

PE5

PE6-

WKUP3

LCD

I/O FT

S -

C9 PC13-WKUP2 I/O FT

PE2

PE3

PE4

PE5

PE6

LCD

PC13

TIM3_ETR/LCD_SEG38/

TRACECLK

TIM3_CH1/LCD_SEG39/

TRACED0

TIM3_CH2/TRACED1

TIM9_CH1/TRACED2

TIM9_CH2/TRACED3

WKUP3/

RTC_TAMP3

WKUP2/RTC_TA

MP1/RTC_TS/

RTC_OUT

DocID027268 Rev 4 33/120

Pin descriptions

Pins

STM32L162VD-X

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

PC14-

OSC32_IN

(3)

PC15-

OSC32_OUT

10 E8 V

SS_5

11 E9 V

DD_5

12 F8 PH0-OSC_IN

(4)

13 F9

PH1-

OSC_OUT

(4)

14 F7 NRST

I/O TC

I/O RST

PC14

PC15

SS_5

DD_5

PH0

PH1

NRST

15 F6 PC0 I/O FT PC0

16 H9

17 G9

PC1

PC2

I/O FT

18 G8

19 J9

20 H8

21 G7

22 G6

PC3

SSA

REF-

REF+

DDA

I/O TC

23 K9 PA0-WKUP1 I/O FT

PC1

PC2

PC3

SSA

REF-

REF+

DDA

PA0

PA1

PA2

I/O FT

PA1

PA2

OSC32_IN

OSC32_OUT

OSC_IN

OSC_OUT

LCD_SEG18

LCD_SEG19

LCD_SEG20

LCD_SEG21

TIM2_CH1_ETR/

TIM5_CH1/

USART2_CTS

TIM2_CH2/TIM5_CH2/

USART2_RTS/

LCD_SEG0

TIM2_CH3/TIM5_CH3/

TIM9_CH1/

USART2_TX/LCD_SEG1

ADC_IN10/

COMP1_INP

ADC_IN11/

COMP1_INP

ADC_IN12/

COMP1_INP

ADC_IN13/

COMP1_INP

WKUP1/RTC_TA

MP2/ADC_IN0/

COMP1_INP

ADC_IN1/

COMP1_INP/

OPAMP1_VINP

ADC_IN2/

COMP1_INP/

OPAMP1_VINM

34/120 DocID027268 Rev 4

STM32L162VD-X

Pins

Pin descriptions

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

26 H7

27 K8

L8,

29 J7

30 M8

31 H6

32 K7

33 L7

34 M7

35 J6

36 K6

37 M6

38 L6

39 M5

PB1

PB2

PE7

PE8

PA7

PC4

PC5

PA3

SS_4

DD_4

PA4

PA5

PA6

PB0

I/O TC

I/O FT

I/O TC

I/O FT

I/O TC

PA3

SS_4

DD_4

PA4

PA5

PA6

PA7

PC4

PC5

PB0

PB1

PB2/

BOOT1

PE7

PE8

TIM2_CH4/TIM5_CH4/

TIM9_CH2/

USART2_RX/LCD_SEG2

ADC_IN3/

COMP1_INP/

OPAMP1_VOUT

SPI1_NSS/SPI3_NSS/

I2S3_WS/

USART2_CK

TIM2_CH1_ETR/

SPI1_SCK

TIM3_CH1/TIM10_CH1/S

PI1_MISO/

LCD_SEG3

TIM3_CH2/TIM11_CH1/

SPI1_MOSI/

LCD_SEG4

LCD_SEG22

LCD_SEG23

TIM3_CH3/LCD_SEG5

TIM3_CH4/LCD_SEG6

ADC_IN4/

DAC_OUT1/

COMP1_INP

ADC_IN5/

DAC_OUT2/

COMP1_INP

ADC_IN6/

COMP1_INP/

OPAMP2_VINP

ADC_IN7/

COMP1_INP/

OPAMP2_VINM

ADC_IN14/

COMP1_INP

ADC_IN15/

COMP1_INP

ADC_IN8/

COMP1_INP/

OPAMP2_VOUT/

VREF_OUT

ADC_IN9/

COMP1_INP/

VREF_OUT

BOOT1

ADC_IN0b

ADC_IN22/

COMP1_INP

ADC_IN23/

COMP1_INP

DocID027268 Rev 4 35/120

Pin descriptions

Pins

STM32L162VD-X

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

36/120

40 M4

41 J5

42 L5

43 M3

44 K5

45 L4

46 K4

47 M2

48 L3

L2,

50 K3

51 J4

PE9

PE10

PE11

PE12

PE13

PE14

PE15

PB10

PB11

SS_1

DD_1

PB12

PB13

PB14

PB15

PD8

I/O FT

I/O TC

I/O FT

PE9

PE10

PE11

PE12

PE13

PE14

PE15

PB10

PB11

SS_1

DD_1

PB12

PB13

PB14

PB15

PD8

TIM2_CH1_ETR

TIM2_CH2

TIM2_CH3

TIM2_CH4/SPI1_NSS

SPI1_SCK

SPI1_MISO

SPI1_MOSI

TIM2_CH3/I2C2_SCL/

USART3_TX/

LCD_SEG10

TIM2_CH4/I2C2_SDA/

USART3_RX/

LCD_SEG11

TIM10_CH1/I2C2_SMBA/

SPI2_NSS/I2S2_WS/

USART3_CK/

LCD_SEG12

TIM9_CH1/SPI2_SCK/

I2S2_CK/

USART3_CTS/

LCD_SEG13

TIM9_CH2/SPI2_MISO/

USART3_RTS/

LCD_SEG14

TIM11_CH1/SPI2_MOSI/

I2S2_SD/

LCD_SEG15

USART3_TX/

LCD_SEG28

ADC_IN24/

COMP1_INP

ADC_IN25/

COMP1_INP

ADC_IN18/

COMP1_INP

ADC_IN19/

COMP1_INP

ADC_IN20/

COMP1_INP

ADC_IN21/

COMP1_INP/

RTC_REFIN

DocID027268 Rev 4

STM32L162VD-X

Pins

Pin descriptions

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

56 J2

57 K1

58 G4

59 H3

60 H2

61 J1

62 G3

63 H1

64 G1

65 G2

66 F4

67 F3

68 F1

69 F2

70 E1

71 E2

72 E3

73 D1

D2,

PD9

PD10

PD11

PC7

PC8

PC9

PA8

PA9

PA10

PD12

PD13

PD14

PD15

PC6

PA11

PA12

PA13

PH2

SS_2

I/O FT

S -

PD9

PD10

PD11

PD12

PD13

PD14

PD15

PC6

PC7

PC8

PC9

PA8

PA9

PA10

PA11

PA12

JTMS-

SWDIO

PH2

SS_2

USART3_RX/

LCD_SEG29

USART3_CK/

LCD_SEG30

USART3_CTS/

LCD_SEG31

TIM4_CH1/

USART3_RTS/

LCD_SEG32

TIM4_CH2/LCD_SEG33

TIM4_CH3/LCD_SEG34

TIM4_CH4/LCD_SEG35

TIM3_CH1/I2S2_MCK/

LCD_SEG24

TIM3_CH2/I2S3_MCK/

LCD_SEG25

TIM3_CH3/LCD_SEG26

TIM3_CH4/LCD_SEG27

USART1_CK/MCO/

LCD_COM0

USART1_TX /

LCD_COM1

USART1_RX /

LCD_COM2

USART1_CTS/

SPI1_MISO

USART1_RTS/

SPI1_MOSI

JTMS-SWDIO

USB_DM

USB_DP

DocID027268 Rev 4 37/120

Pin descriptions

Pins

STM32L162VD-X

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

38/120

78 E4

79 C2

80 B2

81 A2

82 D4

83 C3

84 C4

85 A3

86 B3

87 B4

88 A4

89 B5

PD0

PD1

PD2

PD3

PD4

PD5

PD6

PD7

PB3

DD_2

PA14

PA15

PC10

PC11

PC12

S -

I/O FT

DD_2

JTCK-

SWCLK

JTDI

PC10

PC11

PC12

PD0

PD1

PD2

PD3

PD4

PD5

PD6

PD7

JTDO

JTCK-SWCLK

TIM2_CH1_ETR/

SPI1_NSS/SPI3_NSS/

I2S3_WS/LCD_SEG17/

JTDI

SPI3_SCK/I2S3_CK/

USART3_TX/ UART4_TX/

LCD_SEG28/

LCD_SEG40/LCD_COM4

SPI3_MISO/USART3_RX/

UART4_RX/

LCD_SEG29/

LCD_SEG41/LCD_COM5

SPI3_MOSI/I2S3_SD/

USART3_CK/

UART5_TX/LCD_SEG30/

LCD_SEG42/

LCD_COM6

TIM9_CH1/SPI2_NSS/

I2S2_WS

SPI2_SCK/I2S2_CK

TIM3_ETR/UART5_RX/

LCD_SEG31/

LCD_SEG43/LCD_COM7

SPI2_MISO/

USART2_CTS

SPI2_MOSI/I2S2_SD/

USART2_RTS

USART2_TX

USART2_RX

TIM9_CH2/USART2_CK

TIM2_CH2/SPI1_SCK/

SPI3_SCK/ I2S3_CK/

LCD_SEG7/JTDO

COMP2_INM

DocID027268 Rev 4

STM32L162VD-X

Pins

Pin descriptions

Table 7. STM32L162VD-X pin definitions (continued)

Pin functions

Pin name

Main function

(2)

(after reset)

Alternate functions

Additional functions

PB4

PB5

PB6

I/O FT

NJTRST

PB5

PB6

TIM3_CH1/SPI1_MISO/

SPI3_MISO/

LCD_SEG8/NJTRST

TIM3_CH2/I2C1_SMBA/

SPI1_MOSI/

SPI3_MOSI/I2S3_SD/

LCD_SEG9

TIM4_CH1/I2C1_SCL/

USART1_TX

COMP2_INP

PB7

BOOT0

PB8

PB9

PE0

I/O FT

I B

I/O FT

PB7

BOOT0

PB8

PB9

PE0

TIM4_CH2/I2C1_SDA/

USART1_RX

TIM4_CH3/TIM10_CH1/

I2C1_SCL/

LCD_SEG16

TIM4_CH4/

TIM11_CH1/I2C1_SDA/

LCD_COM3

TIM4_ETR/TIM10_CH1/

LCD_SEG36

TIM11_CH1/LCD_SEG37

COMP2_INP/

PVD_IN

98 A8

99 C7

100

B8,

PE1

SS_3

DD_3

I/O FT

PE1

SS_3

DD_3

1. I = input, O = output, S = supply.

2. Function availability depends on the chosen device.

3. The PC14 and PC15 I/Os are only configured as OSC32_IN/OSC32_OUT when the LSE oscillator is ON

(by setting the LSEON bit in the RCC_CSR register). The LSE oscillator pins OSC32_IN/OSC32_OUT can be used as general-purpose PH0/PH1 I/Os, respectively, when the LSE oscillator is off (after reset, the

LSE oscillator is off). The LSE has priority over the GPIO function. For more details, refer to Using the

OSC32_IN/OSC32_OUT pins as GPIO PC14/PC15 port pins section in the STM32L151xx, STM32L152xx and STM32L162xx reference manual (RM0038).

4. The PH0 and PH1 I/Os are only configured as OSC_IN/OSC_OUT when the HSE oscillator is ON (by setting the HSEON bit in the RCC_CR register). The HSE oscillator pins OSC_IN/OSC_OUT can be used as general-purpose PH0/PH1 I/Os, respectively, when the HSE oscillator is off ( after reset, the HSE oscillator is off). The HSE has priority over the GPIO function.

DocID027268 Rev 4 39/120

Alternate functions

Table 8. Alternate function input/output

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

BOOT0

NRST

PA0-WKUP1

PA1

PA2

PA3

PA4

PA5

PA6

PA7

PA8

PA9

PA10

SYSTEM

BOOT0 -

NRST -

TIM2_CH1_

ETR

TIM5_CH1 -

TIM2_CH2 TIM5_CH2

TIM2

TIM3/4/

TIM9/

10/11

TIM2_CH1_

ETR

TIM3_CH1 TIM10_CH1

Alternate function

I2C1/2

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

USART2_CTS -

USART2_RTS

USART2_TX

USART2_RX -

- TIMx_IC1

- SEG1 - TIMx_IC3

- SEG2 - TIMx_IC4

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

SPI1_NSS

SPI3_NSS

I2S3_WS

USART2_CK -

SPI1_SCK -

SPI1_MISO -

MCO -

TIM3_CH2 TIM11_CH1

SPI1_MOSI

USART1_TX -

USART1_RX -

- SEG3 - TIMx_IC3

- SEG4 - TIMx_IC4

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

PA11

PA12

PA13

PA14

PA15

PB0

PB1

PB2

PB3

PB4

PB5

PB6

PB7

PB8

Alternate function

SYSTEM

JTMS-

SWDIO

JTCK-

SWCLK

JTDI

BOOT1 -

TIM3_CH3 -

TIM3_CH4 -

JTDO TIM2_CH2 -

NJTRST -

TIM2

TIM2_CH1_

ETR

TIM3/4/

TIM9/

10/11

TIM3_CH2 -

TIM4_CH1 -

TIM4_CH2 -

I2C1/2

I2C1_

SMBA

TIM4_CH3 TIM10_CH1 I2C1_SCL

SPI1/2

SPI1_NSS

SPI3_NSS

I2S3_WS

I2C1_SCL -

I2C1_SDA -

SPI3

SPI1_MISO -

SPI1_MOSI -

I2S3_CK

SPI1_MOSI

SPI3_MOSI

I2S3_SD

USART1/2/

UART4/

LCD CPRI SYSTEM

USART1_CTS -

USART1_RTS -

USART1_TX -

USART1_RX -

- TIMx_IC4

- TIMx_IC1

- TIMx_IC2

- TIMx_IC3

- SEG17 - TIMx_IC4

- SEG7

- SEG9

- SEG16 -

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVEN

TOUT

EVEN

TOUT

EVEN

TOUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Port name

PB9

PB10

PB11

PB12

PB13

PB14

PB15

PC0

PC1

PC2

PC3

PC4

PC5

PC6

SYSTEM

TIM2

Alternate function

TIM3/4/

TIM9/

10/11

I2C1/2

TIM4_CH4 TIM11_CH1 I2C1_SDA

SPI1/2

SPI3

TIM2_CH3 -

TIM2_CH4 -

TIM10_CH1

I2C2_SM

TIM9_CH1 -

SPI2_NSS

I2S2_WS

SPI2_SCK

I2S2_CK

TIM9_CH2 -

TIM11_CH1 -

SPI2_MISO -

SPI2_MOSI

I2S2_SD

TIM3_CH1 -

I2S2_MCK -

USART1/2/

UART4/

LCD CPRI SYSTEM

USART3_TX -

USART3_RX -

USART3_CK -

USART3_CTS -

USART3_RTS -

- COM3

- SEG15 -

- SEG18 - TIMx_IC1

- SEG19 - TIMx_IC2

- SEG20 - TIMx_IC3

- SEG21 - TIMx_IC4

- SEG22 - TIMx_IC1

- SEG23 - TIMx_IC2

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PC7

PC8

PC9

PC10

PC11

PC12

PC13-WKUP2

PC14

OSC32_IN

PC15

OSC32_OUT

PD0

PD1

PD2

PD3

AFIO0

AFIO1

SYSTEM TIM2

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

Alternate function

TIM3/4/

TIM9/

10/11

TIM3_CH2 -

TIM3_CH3 -

TIM3_CH4 -

I2C1/2

TIM9_CH1 -

TIM3_ETR -

SPI1/2

SPI2_NSS

I2S2_WS

SPI2 SCK

I2S2_CK

SPI3

I2S3_MCK

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

SPI3_SCK

I2S3_CK

USART3_TX UART4_TX -

COM4/

SEG28/

SEG40

SPI3_MISO USART3_RX UART4_RX -

COM5/

SEG29

/SEG41

SPI3_MOSI

I2S3_SD

COM6/

SEG30/

SEG42

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

COM7/

UART5_RX

SEG43

- TIMx_IC3

EVENT

OUT

SPI2_MISO USART2_CTS -

PD7

PD8

PD9

PD10

PD11

PD12

PD13

PD14

PD15

PE0

PE1

Port name

PD4

PD5

PD6

AFIO0

SYSTEM TIM2

AFIO1

TIM3/4/

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI2_MOSI

I2S2_SD

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

USART2_RTS -

USART2_TX -

USART2_RX -

TIM4_CH1 -

TIM4_CH2 -

TIM9_CH2 -

TIM4_CH3 -

TIM4_CH4 -

TIM4_ETR TIM10_CH1

TIM11_CH1 -

USART2_CK -

USART3_TX -

USART3_RX -

USART3_CK -

USART3_CTS -

USART3_RTS -

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

- SEG36 - TIMx_IC1

EVENT

OUT

EVENT

OUT

PE12

PE13

PE14

PE15

PE3

PE4

PE5

PE6-

WKUP3

PE7

PE8

PE9

PE10

PE11

Port name

PE2

AFIO0 AFIO1

SYSTEM TIM2

TRACECK -

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM3/4/

AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

TRACED0 -

TRACED1 -

TRACED2 -

TRACED3 -

TIM2_CH1_

ETR

TIM2_CH2 -

TIM2_CH3 -

TIM2_CH4 -

TIM9_CH1 -

TIM9_CH2

SPI1_NSS -

SPI1_SCK -

SPI1_MISO -

SPI1_MOSI -

- TIMx_IC1

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

EVENT

OUT

- TIMx_IC1

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC3

EVENT

OUT

- TIMx_IC4

- TIMx_IC1

EVENT

OUT

EVENT

OUT

- TIMx_IC2

EVENT

OUT

- TIMx_IC4

EVENT

OUT

Port name

PF0

PF1

PF2

PF3

PF4

PF5

PF6

PF7

PF8

PF9

PF10

PF11

PF12

PF13

AFIO0

AFIO1

SYSTEM TIM2

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM3/4/

AFIO3

TIM9/

10/11

TIM5_ETR -

TIM5_CH2 -

TIM5_CH3 -

TIM5_CH4 -

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PF14

PF15

PG0

PG1

PG2

PG3

PG4

PG5

PG6

PG7

PG8

PG9

PG10

PG11

AFIO0 AFIO1

SYSTEM TIM2

TIM3/4/

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2 AFIO3

TIM9/

10/11

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

Port name

PG12

PG13

PG14

PG15

PH0OSC_IN

PH1OSC_OUT

PH2

AFIO0 AFIO1

SYSTEM TIM2

TIM3/4/

Table 8. Alternate function input/output (continued)

Digital alternate function number

AFIO2

TIM9/

10/11

AFIO3

AFIO4 AFIO5 AFIO6 AFIO7 AFIO8

AFIO11

AFIO14 AFIO15

I2C1/2

Alternate function

SPI1/2

SPI3

USART1/2/

UART4/

LCD CPRI SYSTEM

EVENT

OUT

EVENT

OUT

EVENT

OUT

EVENT

OUT

STM32L162VD-X Memory mapping

Figure 5. Memory map

0xFFFF FFFF

0xE010 0000

0xE000 0000

Cortex-M3 Internal

Peripherals

0xC000 0000

0xA000 0000

0x8000 0000

0x6000 0000

0x4000 0000

Peripherals

0x2000 0000

SRAM

0x0000 0000

Nonvolatile memory

Reserved

0x1FF8 009F

0x1FF8 0080

0x1FF8 0020

0x1FF8 0000

Option Bytes

Bank 2 reserved

Option Bytes

Bank 1 reserved

0x1FF0 2000

0x1FF0 1000

System memory

Bank 1

0x1FF0 0000 reserved

0x0808 4000

Data EEPROM

Bank 2

0x0808 2000

0x0808 0000

0x0807 0000

Data EEPROM

Bank 1 reserved

0x0804 0000

0x0803 0000

Flash memory

Bank 2 reserved

Flash memory

Bank 1

0x0800 0000

0x0000 0000

Aliased to Flash or system memory depending on

BOOT pins

0x4002 3400

0x4002 3000

0x4002 2000

0x4002 1C00

0x4002 1800

0x4002 1400

0x4002 1000

0x4002 0C00

0x4002 0800

0x4002 0400

0x4002 0000

0x4001 3C00

0x4001 3800

0x4001 3400

0x5006 03FF

0x5006 0000

0x4002 6800

0x4002 6400

0x4002 6000

0x4002 4000

APB memory space

AES reserved

DMA2

DMA1

0x4002 3C00

0x4002 3800 reserved

Flash Interface

RCC reserved

CRC reserved

Port G

Port F

Port H

Port E

Port D

Port C

Port B

Port A reserved

USART1 reserved

SPI1

0x4001 3000

0x4001 2C00

0x4001 2800

0x4001 2400 reserved

ADC

0x4001 1400 reserved

TIM11

0x4001 1400

0x4001 0C00

0x4001 0800

TIM10

TIM9

EXTI

0x4001 0400

0x4001 0000

SYSCFG reserved

0x4000 8000

0x4001 7C00

0x4000 7800

0x4000 7400

COMP + RI reserved

DAC1 & 2

PWR

0x4000 7000 reserved

0x4000 6400

0x4000 6000

0x4000 5C00

0x4000 5800

512 byte USB

USB Registers

I2C2

I2C1

0x4000 5400

0x4000 5000

0x4000 4C00

0x4000 4800

0x4000 4400

UART5

UART4

USART3

USART2

0x4000 4000

0x4000 3C00 reserved

SPI3

0x4000 3800

0x4000 3400

0x4000 3000

0x4000 2C00

0x4000 2800

0x4000 2400

0x4000 1C00

0x4000 1400

0x4000 1000

0x4000 0C00

0x4000 0800

0x4000 0400

0x4000 0000

SPI2 reserved

IWDG

WWDG

RTC

LCD reserved

TIM7

TIM6

TIM5

TIM4

TIM3

TIM2

MSv36651V1

DocID027268 Rev 4 49/120

Electrical characteristics STM32L162VD-X

6.1.1

Unless otherwise specified, all voltages are referenced to V

Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on

100% of the device with an ambient temperature at T

A the selected temperature range).

= 25 °C and T

= T

A max (given by

Data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean ±3 σ ).

Unless otherwise specified, typical data are based on T

= 25 °C, V

1.65 V tested.

≤ V

= 3.6 V (for the

≤ 3.6 V voltage range). They are given only as design guidelines and are not

Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean ±2 σ )

Unless otherwise specified, all typical curves are given only as design guidelines and are not tested.

The loading conditions used for pin parameter measurement are shown in

Figure 6

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in

Figure 7 .

Figure 6. Pin loading conditions Figure 7. Pin input voltage

MCU pin MCU pin

C = 50 pF

V

50/120 ai17851c

DocID027268 Rev 4 ai17852d

STM32L162VD-X

6.1.6 Power supply scheme

Figure 8. Power supply scheme

Electrical characteristics

Standby-power circuitry

(LSE,RTC,Wake-up logic, RTC backup registers)

OUT

Logic Kernel logic

(CPU,

Digital &

Memories)

Regulator

GP I/Os

N × 100 nF +

1 × 4.7 μF

DDA

REF

DDA

REF+

100 nF

+ 1 μF

100 nF

+ 1 μF

REF-

SSA

N – number of

pairs

ADC/

DAC

Analog:

OSC,PLL,COMP,

….

MS32461V3

DocID027268 Rev 4 51/120

108

Electrical characteristics

6.1.7 Optional LCD power supply scheme

Figure 9. Optional LCD power supply scheme

VSEL

N x 100 nF

+ 1 x 10 μF

DD1/2/.../N

Step-up

Converter

Option 1

100 nF

LCD

Option 2

EXT

LCD

SS1/2/.../N

LCD

STM32L162VD-X

MS32462V2

1. Option 1: LCD power supply is provided by a dedicated VLCD supply source, VSEL switch is open.

2. Option 2: LCD power supply is provided by the internal step-up converter, VSEL switch is closed, an external capacitance is needed for correct behavior of this converter.

Figure 10. Current consumption measurement scheme

N x 100 nF

+1 x 10 μF

100 nF

+1 μF

N x V

LCD

DDA

REF+

REF-

SSA

MS33028V1

52/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in

Table 9: Voltage characteristics ,

Table 10: Current characteristics

, and

Table 11: Thermal characteristics may cause

permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Symbol

Table 9. Voltage characteristics

Ratings Min Max Unit

–V

External main supply voltage

(including V

DDA and V

)

(1)

Input voltage on five-volt tolerant pin

(2)

Input voltage on any other pin

| Δ V

DDx

| Variations between different V

DD power pins

SSX

− V

| Variations between all different ground pins

(3)

REF+

–V

DDA

ESD(HBM)

Allowed voltage difference for V

Electrostatic discharge voltage

(human body model)

REF+

> V

DDA

–0.3

−

0.3

see

4.0

+4.0

4.0

0.4

Section 6.3.11

1. All main power (V permitted range.

, V

DDA

) and ground (V

, V

SSA

) pins must always be connected to the external power supply, in the

2. V

maximum must always be respected. Refer to Table 10 for maximum allowed injected current values.

3. Include V

REF-

pin.

V mV

Symbol

Table 10. Current characteristics

Ratings Max.

Unit

VDD( Σ )

VSS( Σ )

(2)

VDD(PIN)

VSS(PIN)

Total current into sum of all V

DD_x

power lines (source)

Total current out of sum of all V

SS_x

Maximum current out of each VSS_x ground pin (sink)

(1)

ground lines (sink)

(1)

Maximum current into each V

DD_x

power pin (source)

(1)

100

-70

INJ(PIN)

(3)

Output current sunk by any I/O and control pin 25

Σ I

IO(PIN)

Output current sourced by any I/O and control pin

Total output current sunk by sum of all IOs and control pins

(2)

Total output current sourced by sum of all IOs and control pins

(2)

Injected current on five-volt tolerant I/O

(4)

, RST and B pins

Injected current on any other pin

(5)

Total injected current (sum of all I/O and control pins) (6)

- 25

-60

-5/+0

± 5 mA

Σ I

INJ(PIN)

± 25

1. All main power (V permitted range.

, V

DDA

) and ground (V

, V

SSA

) pins must always be connected to the external power supply, in the

2. This current consumption must be correctly distributed over all I/Os and control pins.

3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.17

4. Positive current injection is not possible on these I/Os. A negative injection is induced by V exceeded. Refer to

Table 9 for maximum allowed input voltage values.

. I

INJ(PIN)

must never be

DocID027268 Rev 4 53/120

108

Electrical characteristics STM32L162VD-X

5. A positive injection is induced by V exceeded. Refer to

> V

while a negative injection is induced by V < V

. I

INJ(PIN)

must never be

6. When several inputs are submitted to a current injection, the maximum Σ I negative injected currents (instantaneous values).

INJ(PIN)

is the absolute sum of the positive and

Symbol

STG

Table 11. Thermal characteristics

Ratings

Storage temperature range

Maximum junction temperature

Value

–65 to +150

150

Unit

°C

6.3.1 General operating conditions

Symbol

Table 12. General operating conditions

Parameter Conditions Min Max Unit f f

V f

HCLK

PCLK1

PCLK2

DDA

(1)

Internal AHB clock frequency

Internal APB1 clock frequency

Internal APB2 clock frequency

Standard operating voltage

BOR detector disabled

BOR detector enabled, at power on

BOR detector disabled, after power on

1.65

1.8

1.65

3.6

Analog operating voltage

(ADC and DAC not used)

Analog operating voltage

(ADC or DAC used)

Must be the same voltage as

(2)

1.65

1.8

3.6

I/O input voltage

FT pins; 2.0 V ≤

-0.3

FT pins; V

< 2.0 V -0.3

BOOT0 pin 0

5.5

5.25

(3)

5.5

(3)

Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7

(4)

Any other pin

LQFP100 package

WLCSP104 package

-0.3

+0.3

465

435

Ambient temperature for 6 suffix version Maximum power dissipation

(5)

–40 85

Ambient temperature for 7 suffix version Maximum power dissipation –40 105

MHz

V mW

°C

Junction temperature range

6 suffix version

7 suffix version

–40

105

110

1. When the ADC is used, refer to Table 54: ADC characteristics

2. It is recommended to power V

DDA

and V

can be tolerated during power-up .

from the same source. A maximum difference of 300 mV between V

and

°C

54/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.

4. If T is lower, higher P

on page 115

values are allowed as long as T

does not exceed T

max (see Table 67: Thermal characteristics

5. In low-power dissipation state, T

max (see

can be extended to -40°C to 105°C temperature range as long as T

Table 67: Thermal characteristics on page 115

does not exceed T

6.3.2 Embedded reset and power control block characteristics

The parameters given in the following table are derived from the tests performed under the

conditions summarized in Table 12

Symbol

Table 13. Embedded reset and power control block characteristics

Parameter Conditions Min Typ t

VDD

(1)

RSTTEMPO

(1)

POR/PDR

BOR0

BOR1

BOR2

rise time rate

fall time rate

Reset temporization

Power on/power down reset threshold

Brown-out reset threshold 0

Brown-out reset threshold 1

Brown-out reset threshold 2

BOR detector enabled

BOR detector disabled

BOR detector enabled

BOR detector disabled

rising, BOR enabled

rising, BOR disabled

(2)

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

1.67

1.69

1.87

1.96

2.22

2.31

0.4

1.3

1.7

1.76

1.93

2.03

2.30

2.41

0.7

1.5

1.74

1.8

1.97

2.07

3.3

1.6

1.65

2.35

2.44

Max Unit

∞

1000

∞

1000

µs/V ms

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108

Electrical characteristics STM32L162VD-X

Table 13. Embedded reset and power control block characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

BOR3

BOR4

PVD0

PVD1

PVD2

PVD3

PVD4

PVD5

PVD6 hyst

Brown-out reset threshold 3

Brown-out reset threshold 4

Programmable voltage detector threshold 0

PVD threshold 1

PVD threshold 2

PVD threshold 3

PVD threshold 4

PVD threshold 5

PVD threshold 6

Hysteresis voltage

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

Falling edge

Rising edge

BOR0 threshold

All BOR and PVD thresholds excepting BOR0

2.45

2.54

2.68

2.78

1.8

1.88

1.98

2.08

2.20

2.28

2.39

2.47

2.57

2.68

2.77

2.87

2.97

3.08

100 -

1. Guaranteed by characterization results.

2. Valid for device version without BOR at power up. Please see option “D” in Ordering information scheme for more details.

V mV

2.24

2.34

2.44

2.54

2.64

2.74

2.83

2.94

3.05

3.15

1.85

1.94

2.04

2.14

2.55

2.66

2.8

2.9

2.28

2.38

2.48

2.58

2.69

2.79

2.88

2.99

3.09

3.20

1.88

1.99

2.09

2.18

2.6

2.7

2.85

2.95

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STM32L162VD-X Electrical characteristics

The parameters given in

Table 15 are based on characterization results, unless otherwise

specified.

Table 14. Embedded internal reference voltage calibration values

Calibration value name Description Memory address

VREFINT_CAL

Raw data acquired at temperature of 30 °C ±5 °C

DDA

= 3 V ±10 mV

0x1FF8 00F8 - 0x1FF8 00F9

Symbol

REFINT out

(1)

VREF_MEAS

REFINT

VREFINT

Coeff

(3)

Coeff

(3)

S_vrefint

ADC_BUF

Table 15. Embedded internal reference voltage

Parameter

Internal reference voltage

Internal reference current consumption

Internal reference startup time

Conditions

– 40 °C < T

Min Typ

< +110 °C 1.202 1.224

DDA

and V

REF+

REFINT

voltage during

factory measure

Accuracy of factory-measured V

REF value

(2)

Temperature coefficient

Including uncertainties due to ADC and

DDA

REF+

values

–40 °C < T

< +110 °C

Long-term stability 1000 hours, T= 25 °C

Voltage coefficient 3.0 V < V

DDA

< 3.6 V

ADC sampling time when reading the internal reference voltage

Startup time of reference voltage buffer for ADC

2.99

1.4

VREF_OUT

Consumption of reference voltage buffer for ADC

VREF_OUT output current

VREF_OUT output load

(4)

13.5

LPBUF

(3)

Consumption of reference voltage buffer for VREF_OUT and COMP

730

1/4 reference voltage

1/2 reference voltage

3/4 reference voltage -

1. Guaranteed by test in production.

2. The internal V

REF

value is individually measured in production and stored in dedicated EEPROM bytes.

3. Guaranteed by characterization results.

4. To guarantee less than 1% VREF_OUT deviation.

Max

1.242

2.3

3.01

±5

100

1000

Unit

µA ms

V mV ppm/°C ppm

2000 ppm/V

1200

µs

µA

µA pF nA

REFINT

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108

Electrical characteristics

6.3.4 Supply current characteristics

STM32L162VD-X

The current consumption is a function of several parameters and factors such as the operating voltage, temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code.

The current consumption is measured as described in

Figure 10: Current consumption measurement scheme

All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to the Dhrystone 2.1 code, unless otherwise specified. The current consumption values are derived from tests performed under ambient temperature T

= 25 °C and V

supply voltage conditions summarized in

Table 12: General operating conditions , unless otherwise specified.

The MCU is placed under the following conditions:

• All I/O pins are configured in analog input mode

• All peripherals are disabled except when explicitly mentioned.

• The Flash memory access time, 64-bit access and prefetch is adjusted depending on f

HCLK

frequency and voltage range to provide the best CPU performance.

• When the peripherals are enabled f

APB1

= f

APB2

= f

AHB

• When PLL is ON, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or

HSE = 16 MHz (if HSE bypass mode is used).

• The HSE user clock applied to OSCI_IN input follows the characteristic specified in

Table 25: High-speed external user clock characteristics .

• For maximum current consumption V

= V

DDA

= 3.6 V is applied to all supply pins.

• For typical current consumption V

DD specified otherwise.

= V

DDA

= 3.0 V is applied to all supply pins if not

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STM32L162VD-X Electrical characteristics

Table 16. Current consumption in Run mode, code with data processing running from

Flash

Symbol Parameter Conditions f

HCLK

Typ Max (1) Unit

Range 3, V

CORE

V VOS[1:0] = 11

=1.2

1 MHz 225

2 MHz 420

500

750

(Run from

Flash)

Supply current in

Run mode, code executed from Flash f

HSE

= f

HCLK

up to

16 MHz included, f

HSE above 16 MHz (PLL

ON)

= f

HCLK

(2)

HSI clock source

(16 MHz)

MSI clock, 65 kHz

MSI clock, 524 kHz

Range 2, V

V VOS[1:0] = 10

Range 1, V

CORE

V VOS[1:0] = 01

=1.5

=1.8

4 MHz 780 1200

4 MHz

32 MHz

0.98

8 MHz 1.85

16 MHz 3.6

8 MHz 2.2

16 MHz 4.4

8.6

1.6

2.9

5.2

3.5

6.5

Range 2, V

CORE

V VOS[1:0] = 10

=1.5

Range 1, V

CORE

V VOS[1:0] = 01

=1.8

16 MHz

32 MHz

3.6

8.7

5.2

12.3

65 kHz 42

Range 3, V

CORE

V VOS[1:0] = 11

=1.2

524 kHz 135

145

250

4.2 MHz 820 1200 MSI clock, 4.2 MHz

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

µA mA

µA

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108

Electrical characteristics STM32L162VD-X

Table 17. Current consumption in Run mode, code with data processing running from

RAM

Symbol Parameter Conditions f

HCLK

Typ Max (1) Unit

(Run from

RAM)

Range 3,

CORE

=1.2 V

VOS[1:0] = 11 f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz

(PLL ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Supply current in Run mode, code executed from RAM,

Flash switched off

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

1.6

3.1

1.9

3.7

32 MHz 7.55

200

360

470

780

685 1200

0.80

1.5

3.5

5.55

10.9

16 MHz 3.15

32 MHz 7.75

65 kHz 40

524 kHz 115

4.2 MHz 715

4.8

11.7

130

215

1100

µA mA

µA

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

60/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Symbol

(Sleep)

Parameter

Supply current in Sleep mode, Flash

OFF

Table 18. Current consumption in Sleep mode

Conditions f

HCLK

Range 3,

CORE

=1.2 V

VOS[1:0] = 11 f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz (PLL

ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

32 MHz

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

16 MHz

32 MHz

Typ

330

625

395

760

1700

140

175

670

1750

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

Range 3,

CORE

=1.2 V

VOS[1:0] = 11

Supply current in Sleep mode, Flash

ON f

HSE

= f

HCLK

up to

16 MHz included, f

HSE

= f

HCLK

/2 above 16 MHz (PLL

ON)

(2)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

65 kHz

524 kHz

4.2 MHz

1 MHz

2 MHz

4 MHz

8 MHz

16 MHz

8 MHz

16 MHz

32 MHz

155

190

340

640

410

770

1750

150

HSI clock source

(16 MHz)

Range 2,

CORE

=1.5 V

VOS[1:0] = 10

Range 1,

CORE

=1.8 V

VOS[1:0] = 01

Supply current in Sleep mode, Flash

MSI clock, 65 kHz

MSI clock, 524 kHz

MSI clock, 4.2 MHz

Range 3,

CORE

=1.2V

VOS[1:0] = 11

1. Guaranteed by characterization results, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register)

16 MHz

32 MHz

65 kHz

524 kHz

4.2 MHz

690

1750

160

2800

105

125

290

µA

2700

380

500

700

1120

800

1300

2700

110

273

250

300

1160

Max

(1)

700

1100

800

1250

2700

220

300

380

500

1100

Unit

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108

Electrical characteristics STM32L162VD-X

Symbol Parameter

Table 19. Current consumption in Low-power run mode

Conditions Typ

DD (LP

Run)

Supply current in

Low-power run mode

All peripherals

OFF, code executed from RAM,

Flash switched

OFF, V

DD to 3.6 V

All executed

from

1.65 V to

3.6 V from 1.65 V peripherals

OFF, code from Flash, f f f f f f

MSI clock, 65 kHz

HCLK

MSI clock, 65 kHz

HCLK

= 32 kHz

MSI clock, 65 kHz

= 65 kHz

= 131 kHz

MSI clock, 65 kHz

= 32 kHz

= 65 kHz

= 131 kHz

MSI clock, 131 kHz

max

(LP Run)

Max allowed current in

Low-power run mode

from

1.65 V to

3.6 V

1. Guaranteed by characterization results, unless otherwise specified.

= -40 °C to 25 °C

= 85 °C

= 105 °C

=-40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

55.7

86.6

53.2

92.1

41.9

72.1

36.1

36.2

65.4

16.5

60.2

95.6

48.5

54.7

76.1

112

Max

(1)

125

40.5

120

108

102

130

140

Unit

µA

200

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Table 20. Current consumption in Low-power sleep mode

Symbol Parameter Conditions Typ

(LP Sleep)

Supply current in

Low-power sleep mode

All peripherals

OFF, V

1.65 V to 3.6 V

TIM9 and

USART1

from enabled, Flash

ON, V

from

1.65 V to 3.6 V f

MSI clock, 65 kHz

HCLK

= 32 kHz

Flash OFF

= -40 °C to 25 °C 5.5

f f f f

MSI clock, 65 kHz

HCLK

Flash ON

MSI clock, 65 kHz

HCLK

= 32 kHz

= 65 kHz,

Flash ON

MSI clock, 65 kHz

= 32 kHz

MSI clock, 65 kHz

HCLK

= 65 kHz f

MSI clock, 131 kHz

HCLK

= 131 kHz,

Flash ON f

MSI clock, 131 kHz

HCLK

= 131 kHz

= -40 °C to 25 °C 18.5

= 85 °C

= 105 °C

26.8

= -40 °C to 25 °C 18.5

= 85 °C 27.2

= 105 °C 37.3

= -40 °C to 25 °C 21.5

= 55 °C

= 85 °C

23.7

29.8

= 105 °C 39.7

= -40 °C to 25 °C 18.5

= 85 °C

= 105 °C

26.8

38.3

= -40 °C to 25 °C 18.5

= 85 °C 27.2

= 105 °C 38.5

= -40 °C to 25 °C 21.5

= 55 °C

= 85 °C

23.7

29.8

= 105 °C 41.2

max

(LP Sleep)

Max allowed current in

Low-power sleep mode

from 1.65 V to 3.6 V

1. Guaranteed by characterization results, unless otherwise specified.

Max

(1)

Unit

200

µA

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108

Electrical characteristics STM32L162VD-X

Symbol

(Stop with RTC)

Table 21. Typical and maximum current consumptions in Stop mode

Parameter Conditions Typ Max (1) Unit

Supply current in

Stop mode with RTC enabled

RTC clocked by LSI or LSE external clock

(32.768kHz), regulator in LP mode,

HSI and HSE OFF

(no independent watchdog)

RTC clocked by LSE external quartz

(32.768kHz), regulator in LP mode,

HSI and HSE OFF

(no independent watchdog

(4)

LCD

OFF

LCD

OFF

= -40°C to 25°C

= 1.8 V

= -40°C to 25°C

= 55°C

LCD

(static duty)

(2)

LCD

ON (1/8 duty)

(3)

= 85°C

= 105°C

= -40°C to 25°C

= 55°C

= 85°C

= 105°C

= -40°C to 25°C

= 55°C

= 85°C

= 105°C

1.18

1.4

3.02

7.44

15.5

1.5

4.65

9.07

15.6

3.9

5.19

9.8

18.4

= -40°C to 25°C 1.65

= 55°C 3.32

LCD

(static duty)

(2)

= 85°C

= 105°C

= -40°C to 25°C 1.75

= 55°C 4.9

= 85°C

= 105°C

7.83

9.41

15.8

LCD

ON (1/8 duty)

(3)

= -40°C to 25°C

= 55°C

LCD

OFF

= 85°C

= 105°C

= -40°C to 25°C

= 1.8V

= -40°C to 25°C

= 3.0V

= -40°C to 25°C

= 3.6V

4.1

5.53

18.5

1.33

1.62

1.87

µA

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Table 21. Typical and maximum current consumptions in Stop mode (continued)

Symbol Parameter Conditions Typ Max (1) Unit

(Stop)

(WU from

Stop)

Regulator in LP mode, HSI and

HSE OFF, independent watchdog and LSI enabled

= -40°C to 25°C 1.8

Supply current in

Stop mode (RTC disabled)

Regulator in LP mode, LSI, HSI and HSE OFF (no independent watchdog)

= -40°C to 25°C 0.560

= 55°C

= 85°C

2.18

6.6

= 105°C 14.9

MSI = 4.2 MHz 2

Supply current during wakeup from Stop mode

MSI = 1.05 MHz

MSI = 65 kHz

(5)

= -40°C to 25°C 1.45

1.45

2.2

1.5

µA mA

1. Guaranteed by characterization results, unless otherwise specified.

2. LCD enabled with external VLCD, static duty, division ratio = 256, all pixels active, no LCD connected.

3. LCD enabled with external VLCD, 1/8 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.

4. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

5. When MSI = 64 kHz, the RMS current is measured over the first 15 µs following the wakeup event. For the remaining part of the wakeup period, the current corresponds the Run mode current.

DocID027268 Rev 4 65/120

108

Electrical characteristics STM32L162VD-X

Symbol

Table 22. Typical and maximum current consumptions in Standby mode

Parameter Conditions Typ Max (1) Unit

(Standby with RTC)

(Standby)

(WU from

Standby)

Supply current in

Standby mode with RTC enabled

= -40 °C to 25 °C

= 1.8 V

RTC clocked by LSI (no independent watchdog)

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

= -40 °C to 25 °C

= 1.8 V

RTC clocked by LSE external quartz (no independent watchdog)

(3)

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

Independent watchdog and LSI enabled

= -40 °C to 25 °C

Supply current in

Standby mode (RTC disabled)

Independent watchdog and LSI OFF

= -40 °C to 25 °C

= 55 °C

= 85 °C

= 105 °C

Supply current during wakeup time from

Standby mode

= -40 °C to 25 °C

0.865

0.29

0.96

1.38

1.98

1.11

1.72

2.12

2.54

0.97

1.28

2.01

2.5

2.98

1.3

(2)

1.9

2.2

8.3

(2)

1.7

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8pF loading capacitors.

µA mA

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the following table. The MCU is placed under the following conditions:

• all I/O pins are in input mode with a static value at V

or V

(no load)

• all peripherals are disabled unless otherwise mentioned

• the given value is calculated by measuring the current consumption

– with all peripherals clocked off

– with only one peripheral clocked on

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APB1

Electrical characteristics

Peripheral

USART4

USART5

I2C1

I2C2

USB

PWR

DAC

COMP

TIM2

TIM3

TIM4

TIM5

TIM6

TIM7

LCD

WWDG

SPI2

SPI3

USART2

USART3

Table 23. Peripheral current consumption (1)

Typical consumption, V

= 3.0 V, T

= 25 °C

Range 1,

CORE

1.8 V

VOS[1:0] = 01

Range 2,

CORE

1.5 V

VOS[1:0] = 10

Range 3,

CORE

1.2 V

VOS[1:0] = 11

Low-power sleep and run

7.3

7.6

7.3

7.2

13.0

2.6

5.9

3.9

3.8

4.2

2.9

5.4

12.0

10.5

10.4

13.8

5.5

7.6

6.1

6.3

6.1

5.9

11.2

2.3

5.0

3.3

3.0

3.3

3.6

2.5

4.4

10.0

8.8

11.5

4.6

6.2

4.7

8.9

1.9

4.0

2.6

4.8

5.0

4.8

2.5

2.6

2.8

2.1

3.5

3.7

4.9

5.0

8.0

7.0

9.1

6.1

6.3

6.1

5.9

11.2

2.3

5.0

3.3

3.0

3.3

3.6

2.5

4.4

10.0

8.8

11.5

4.6

6.2

Unit

µA/MHz

HCLK

)

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108

Electrical characteristics STM32L162VD-X

Peripheral

APB2

AHB

GPIOF

GPIOG

GPIOH

CRC

AES

FLASH

DMA1

DMA2

All enabled

DD (RTC)

DD (LCD)

DD (ADC)

(4)

DD (DAC)

(5)

DD (COMP1)

Slow mode

DD (COMP2)

DD (PVD / BOR)

(6)

DD (IWDG)

Fast mode

SYSCFG & RI

TIM9

TIM10

TIM11

ADC

(2)

SPI1

USART1

GPIOA

GPIOB

GPIOC

GPIOD

GPIOE

Table 23. Peripheral current consumption (1) (continued)

Typical consumption, V

= 3.0 V, T

= 25 °C

Range 1,

CORE

1.8 V

VOS[1:0] = 01

Range 2,

CORE

1.5 V

VOS[1:0] = 10

Range 3,

CORE

1.2 V

VOS[1:0] = 11

Low-power sleep and run

5.9

7.2

1.7

0.8

21.6

9.5

4.8

8.2

6.3

8.1

6.7

2.9

8.2

6.2

16.8

15.7

227

4.9

6.1

1.4

0.7

18.1

7.9

3.9

6.9

5.3

5.2

6.8

5.7

2.4

6.9

5.1

14.5

13.6

188

3.9

4.9

1.1

0.5

16.0

6.2

3.2

5.4

4.1

5.4

4.5

2.0

5.5

4.1

11.5

10.8

163

4.9

6.1

1.4

0.7

(3)

7.9

3.9

6.9

5.3

5.2

6.8

5.7

2.4

6.9

5.1

14.5

13.6

169.9

0.4

3.1

1450

340

0.16

2.6

0.25

Unit

µA/MHz

HCLK

)

µA

68/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

1. Data based on differential I following conditions: f power run/sleep), f = f

measurement between all peripherals OFF an one peripheral with clock enabled, in the

= 32 MHz (range 1), f

HCLK

, f

APB2

= f

HCLK

= 16 MHz (range 2), f

HCLK

= 4 MHz (range 3), f

HCLK

= 64kHz (Low-

, default prescaler value for each peripheral. The CPU is in Sleep mode in

2. HSI oscillator is OFF for this measure.

3. In Low-power sleep and run mode, the Flash memory must always be in power-down mode.

4. Data based on a differential I

DD measurement between ADC in reset configuration and continuous ADC conversion (HSI consumption not included).

5. Data based on a differential I

DD measurement between DAC in reset configuration and continuous DAC conversion of

/2. DAC is in buffered mode, output is left floating.

6. Including supply current of internal reference voltage.

6.3.5 Wakeup time from low-power mode

The wakeup times given in the following table are measured with the MSI RC oscillator. The clock source used to wake up the device depends on the current operating mode:

• Sleep mode: the clock source is the clock that was set before entering Sleep mode

• Stop mode: the clock source is the MSI oscillator in the range configured before entering Stop mode

• Standby mode: the clock source is the MSI oscillator running at 2.1 MHz

All timings are derived from tests performed under the conditions summarized in

Table 12 .

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Electrical characteristics STM32L162VD-X

Symbol

Table 24. Low-power mode wakeup timings

Parameter Conditions Typ Max

(1)

Unit t t

WUSLEEP

WUSLEEP_LP

Wakeup from Sleep mode

Wakeup from Low-power sleep mode, f

HCLK

= 262 kHz f

HCLK

= 32 MHz f

HCLK

= 262 kHz

Flash enabled f

HCLK

= 262 kHz

Flash switched OFF

0.4

46 -

Wakeup from Stop mode, regulator in Run mode

ULP bit = 1 and FWU bit = 1 f

HCLK

= f

MSI

= 4.2 MHz 8.2

WUSTOP

Wakeup from Stop mode, regulator in low-power mode

ULP bit = 1 and FWU bit = 1 f

HCLK

= f

MSI

= 4.2 MHz

Voltage range 1 and 2 f

HCLK

= f

MSI

= 4.2 MHz

Voltage range 3

7.7

8.2

8.9

13.1

f f

HCLK

= f

MSI

= 2.1 MHz 10.2

HCLK

= f

MSI

= 1.05 MHz 16

HCLK

= f

MSI

= 524 kHz f

HCLK

= f

MSI

= 262 kHz

13.4

66 f

HCLK

= f

MSI

= 131 kHz f

HCLK

= MSI = 65 kHz

112

221

123

236 t

WUSTDBY

Wakeup from Standby mode

ULP bit = 1 and FWU bit = 1

Wakeup from Standby mode

FWU bit = 0 f f

HCLK

1. Guaranteed by characterization, unless otherwise specified

= MSI = 2.1 MHz

2.6

104

3.25

µs ms

High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.The

external clock signal has to respect the I/O characteristics in Section 6.3.12

. However, the

Symbol f

HSE_ext

Table 25. High-speed external user clock characteristics

(1)

Parameter Conditions Min Typ Max Unit

User external clock source frequency

CSS is on or

PLL is used

CSS is off, PLL not used

MHz

70/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Table 25. High-speed external user clock characteristics (1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

HSEH

HSEL t w(HSEH) t w(HSEL) t r(HSE) t f(HSE)

C in(HSE)

OSC_IN input pin high level voltage

OSC_IN input pin low level voltage

OSC_IN high or low time

OSC_IN rise or fall time

OSC_IN input capacitance

1. Guaranteed by design.

0.7V

2.6

0.3V

V ns pF

Figure 11. High-speed external clock source AC timing diagram tw(HSEH)

VHSEH

VHSEL

90%

10% tr(HSE)

THSE tf(HSE) tw(HSEL) t

MS19214V2

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Electrical characteristics STM32L162VD-X

Low-speed external user clock generated from an external source

The characteristics given in the following table result from tests performed using a low-

speed external clock source, and under the conditions summarized in Table 12

Symbol

Table 26. Low-speed external user clock characteristics (1)

Parameter f

LSE_ext

LSEH

User external clock source frequency

OSC32_IN input pin high level voltage

LSEL

OSC32_IN input pin low level voltage t w(LSEH) t w(LSEL) t r(LSE) t f(LSE)

IN(LSE)

OSC32_IN high or low time

OSC32_IN rise or fall time

OSC32_IN input capacitance

1. Guaranteed by design.

Conditions

Min

0.7V

465

Typ

32.768

0.6

Max Unit

1000 kHz

0.3V

V ns pF

Figure 12. Low-speed external clock source AC timing diagram tw(LSEH)

VLSEH

VLSEL

90%

10% tr(LSE) tw(LSEL) t

TLSE tf(LSE)

MS19215V2

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 1 to 24 MHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in

Table 27 . In

the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy).

72/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Symbol

Table 27. HSE oscillator characteristics (1)(2)

Parameter Conditions Min Typ Max Unit f

OSC_IN

Oscillator frequency

Feedback resistor

200

MHz k Ω

Recommended load capacitance versus equivalent serial resistance of the crystal

)

(3)

= 30 Ω 20 pF

HSE

HSE driving current V

= 3.3 V,

= V

SS with 30 pF load

3 mA

C = 20 pF f

OSC

= 16 MHz

2.5 (startup)

0.7 (stabilized)

DD(HSE)

HSE oscillator power consumption

2.5 (startup)

0.46 (stabilized) mA

C = 10 pF f

OSC

= 16 MHz g m

Oscillator transconductance

Startup 3.5

mA /V t

SU(HSE)

(4)

Startup time V

is stabilized 1 ms

1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.

2. Guaranteed by characterization results.

3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a humid environment, due to the induced leakage and the bias condition change. However, it is recommended to take this point into account if the MCU is used in tough humidity conditions.

4. t

SU(HSE)

is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

For C

and C

, it is recommended to use high-quality external ceramic capacitors in the

5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match

the requirements of the crystal or resonator (see Figure 13

). C

and C

L2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of C

and C

. PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing

and C

. Refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com

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Electrical characteristics STM32L162VD-X

Figure 13. HSE oscillator circuit diagram

L1 f

HSE

to core

R m

L m

C m

Resonator

OSC_IN

F g m

Consumption control

Resonator

STM32

OSC_OUT

L2 ai18235b

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in

Table 28 . In

Symbol

Table 28. LSE oscillator characteristics (f

LSE

= 32.768 kHz) (1)

Parameter Conditions Min Typ Max Unit f

LSE

Low speed external oscillator frequency

32.768

kHz

Feedback resistor 1.2

M Ω

(2)

Recommended load capacitance versus equivalent serial resistance of the crystal (R

)

(3)

LSE driving current

= 30 k Ω 8 pF

LSE

DD (LSE)

LSE oscillator current consumption

= 3.3 V, V

= V

= 1.8 V

= 3.0 V

= 3.6V

450

600

750

1.1

µA nA g m t

SU(LSE)

(4)

Oscillator transconductance

Startup time V

is stabilized

1 -

µA/V

1. Guaranteed by characterization results.

2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”.

3. The oscillator selection can be optimized in terms of supply current using an high quality resonator with small R

value for example MSIV-TIN32.768kHz. Refer to crystal manufacturer for more details.

4. t

SU(LSE)

is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

74/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Note: For C

and C

, it is recommended to use high-quality ceramic capacitors in the 5 pF to

15 pF range selected to match the requirements of the crystal or resonator (see Figure 14 ).

and C

L2, are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of C

Load capacitance C

has the following formula: C

C stray between 2 pF and 7 pF.

and C

= C

x C

/ ( C

+ C

) + C stray

where

is the pin capacitance and board or trace PCB-related capacitance. Typically, it is

Caution: To avoid exceeding the maximum value of C

L1 to use a resonator with a load capacitance C

and C

(15 pF) it is strongly recommended

≤ 7 pF. Never use a resonator with a load capacitance of 12.5 pF.

Example: if the user chooses a resonator with a load capacitance of C

= 6 pF and

C stray

= 2 pF, then C

= C

= 8 pF.

Figure 14. Typical application with a 32.768 kHz crystal

Resonator with integrated capacitors

CL1

32.768 kH z resonator

OSC32_IN

Bias controlled gain

OSC32_OU T

CL2 f

LSE

STM32L1xx ai17853b

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Electrical characteristics

6.3.7 Internal clock source characteristics

STM32L162VD-X

The parameters given in

Table 29 are derived from tests performed under the conditions

summarized in

Table 12 .

High-speed internal (HSI) RC oscillator

Symbol

Table 29. HSI oscillator characteristics

Parameter Conditions Min Typ Max Unit f

HSI

TRIM

(1)(2)

ACC

HSI

(2)

Frequency

HSI user-trimmed resolution

Accuracy of the factory-calibrated

HSI oscillator

= 3.0 V

Trimming code is not a multiple of 16

Trimming code is a multiple of 16

DDA

= 3.0 V, T

= 25 °C

DDA

= 3.0 V, T

= 0 to 55 °C

DDA

= 3.0 V, T

= -10 to 70 °C

DDA

= 3.0 V, T

= -10 to 85 °C

DDA

= 3.0 V, T

= -10 to 105 °C

DDA

= 1.65 V to 3.6 V

= -40 to 105 °C

-1

(3)

-1.5

-2

-2.5

-4

± 0.4

0.7

± 1.5

1 (3) %

1.5

MHz

I t

SU(HSI)

(2)

DD(HSI)

(2)

HSI oscillator startup time

HSI oscillator power consumption

3.7

100

140

1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

2. Guaranteed by characterization results.

3. Guaranteed by test in production.

µs

µA

Low-speed internal (LSI) RC oscillator

Table 30. LSI oscillator characteristics

Symbol Parameter Min Typ f

LSI

(1)

LSI frequency 26 38

LSI

(2) t su(LSI)

(3)

DD(LSI)

(3)

LSI oscillator frequency drift

0°C ≤ T

≤

LSI oscillator startup time

LSI oscillator power consumption

-10

400

1. Guaranteed by test in production.

2. This is a deviation for an individual part, once the initial frequency has been measured.

3. Guaranteed by design.

Max

200

510

Unit kHz

µs nA

76/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Multi-speed internal (MSI) RC oscillator

Symbol f

MSI

Table 31. MSI oscillator characteristics

Parameter Condition

Frequency after factory calibration, done at

= 3.3 V and T

= 25 °C

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6

ACC

MSI

Frequency error after factory calibration

TEMP(MSI)

(1)

VOLT(MSI)

(1)

MSI oscillator frequency drift

0 °C ≤ T

≤ 105 °C

MSI oscillator frequency drift

1.65 V ≤ V

≤ 3.6 V, T

= 25 °C

DD(MSI)

(2) t

SU(MSI)

MSI oscillator power consumption

MSI oscillator startup time

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6,

Voltage range 1 and 2

MSI range 6,

Voltage range 3

Typ

65.5

131

262

524

1.05

2.1

4.2

± 0.5

± 3

0.75

1.5

2.5

4.5

3.5

Max Unit

kHz

MHz

2.5

%/V

µA

µs

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108

Electrical characteristics STM32L162VD-X

Symbol

Table 31. MSI oscillator characteristics (continued)

Parameter Condition t

STAB(MSI)

(2) f

OVER(MSI)

MSI oscillator stabilization time

MSI oscillator frequency overshoot

MSI range 0

MSI range 1

MSI range 2

MSI range 3

MSI range 4

MSI range 5

MSI range 6,

Voltage range 1 and 2

MSI range 3,

Voltage range 3

Any range to range 5

Any range to range 6

1. This is a deviation for an individual part, once the initial frequency has been measured.

2. Guaranteed by characterization results.

Typ

Max Unit

2.5

µs

MHz

78/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

The parameters given in

Table 32 are derived from tests performed under the conditions

summarized in

Table 12 .

Table 32. PLL characteristics

Value

Symbol Parameter Unit

Min Typ Max (1) f

PLL_IN

PLL input clock

(2)

PLL input clock duty cycle

45 -

MHz

% t f

PLL_OUT

LOCK

PLL output clock

PLL lock time

PLL input = 16 MHz

PLL VCO = 96 MHz

115

160

MHz

µs

Jitter

DDA

(PLL)

Cycle-to-cycle jitter

Current consumption on V

DDA

Current consumption on V

220

120

± 600

450

150 ps

µA

1. Guaranteed by characterization results.

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by f

PLL_OUT

The characteristics are given at T

= -40 to 105 °C unless otherwise specified.

RAM memory

Table 33. RAM and hardware registers

Symbol Parameter

VRM Data retention mode

(1)

Conditions

STOP mode (or RESET)

Min

1.65

Typ Max Unit

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode).

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Electrical characteristics STM32L162VD-X

Flash memory and data EEPROM

Symbol

Table 34. Flash memory and data EEPROM characteristics

Parameter Conditions t

DD prog

Operating voltage

Read / Write / Erase

Programming/ erasing time for byte / word / double word / half-page

Erasing

Programming

Average current during the whole programming / erase operation

Maximum current (peak) during the whole programming / erase operation

= 25 °C, V

= 3.6 V

1. Guaranteed by design.

Min

1.65

Typ Max

(1)

3.28

600

1.5

3.6

3.94

2.5

Unit

V ms

µA mA

Symbol

Table 35. Flash memory and data EEPROM endurance and retention

Value

Parameter Conditions

Min

(1)

Typ Max

CYC

(2)

Cycling (erase / write)

Program memory

Cycling (erase / write)

EEPROM data memory

= -40°C to

105 °C t

RET

(2)

Data retention (program memory) after

10 kcycles at T

= 85 °C

Data retention (EEPROM data memory) after 300 kcycles at T

= 85 °C

Data retention (program memory) after

10 kcycles at T

= 105 °C

Data retention (EEPROM data memory) after 300 kcycles at T

= 105 °C

RET

= +85 °C

RET

= +105 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

300

10 -

Unit kcycles years

80/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:

• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

• FTB : A Burst of Fast Transient voltage (positive and negative) is applied to V

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.

and

A device reset allows normal operations to be resumed.

The test results are given in Table 36

. They are based on the EMS levels and classes defined in application note AN1709.

Table 36. EMS characteristics

Symbol

FESD

EFTB

Parameter Conditions

Level/

Class

Voltage limits to be applied on any I/O pin to induce a functional disturbance

Fast transient voltage burst limits to be applied through 100 pF on V

and V pins to induce a functional disturbance

= 3.3 V, LQFP100, T

= +25 °C, f

HCLK

= 32 MHz conforms to IEC 61000-4-2

= 3.3 V, LQFP100, T

= +25 f

°C,

HCLK

= 32 MHz conforms to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

• Corrupted program counter

• Unexpected reset

• Critical data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1 second.

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108

Electrical characteristics STM32L162VD-X

To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Symbol Parameter

EMI

Table 37. EMI characteristics

Max vs. frequency range

Conditions

Monitored frequency band

4 MHz voltage range 3

16 MHz voltage range 2

32 MHz voltage range 1

Unit

Peak level

= 3.6 V,

= 25 °C,

LQFP100 package compliant with IEC

61967-2

0.1 to 30 MHz

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

-14

-11

-7

-6

-1

-4

2.5

dBµV

Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114, ANSI/ESD STM5.3.1. standard.

Table 38. ESD absolute maximum ratings

Symbol Ratings Conditions Class

Maximum value

(1)

Unit

ESD(HBM)

Electrostatic discharge voltage

(human body model)

= +25 °C, conforming to JESD22-A114

ESD(CDM)

Electrostatic discharge voltage

(charge device model)

= +25 °C, conforming to ANSI/ESD STM5.3.1.

LQFP100

WLCSP104 C3

1. Guaranteed by characterization results.

2000

500

250

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STM32L162VD-X Electrical characteristics

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up performance:

• A supply overvoltage is applied to each power supply pin

• A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Symbol

Parameter

Table 39. Electrical sensitivities

Conditions

Static latch-up class T

= +105 °C conforming to JESD78A

Class

II level A

As a general rule, current injection to the I/O pins, due to external voltage below V

(for standard pins) should be avoided during normal product operation.

or above V

However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset occurrence oscillator frequency deviation, LCD levels).

The test results are given in the Table 40

Symbol

INJ

Table 40. I/O current injection susceptibility

Functional susceptibility

Description

Injected current on all 5 V tolerant (FT) pins

Injected current on BOOT0

Injected current on any other pin

Negative injection

-5

(1)

-0

-5

(1)

Positive injection

(2)

1. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.

2. Injection is not possible.

Unit mA

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108

Electrical characteristics STM32L162VD-X

General input/output characteristics

Unless otherwise specified, the parameters given in

Table 47 are derived from tests

performed under the conditions summarized in Table 12

. All I/Os are CMOS and TTL compliant.

Symbol

IH hys lkg

Parameter

Input low level voltage

Input high level voltage hysteresis (2)

Input leakage current

(4)

Table 41. I/O static characteristics

I/O Schmitt trigger voltage

Conditions Min

TC and FT I/O

BOOT0

TC I/O

FT I/O

BOOT0

TC and FT I/O

BOOT0

≤ V

I/Os with LCD

≤ V

I/Os with analog switches

≤ V

I/Os with analog switches and LCD

≤ V

I/Os with USB

0.45 V

+0.38

(2)

0.39 V

+0.59

(2)

0.15 V

+0.56

(2)

Typ

10% V

(3)

0.01

Max

0.3 V

(1)(2)

0.14 V

(2)

±50

±250

≤ V

TC and FT I/Os

FT I/O

≤ V

≤ 5V

±50

±10

Weak pull-up equivalent resistor

(5)(1)

Weak pull-down equivalent resistor

(5)

I/O pin capacitance 5 -

1. Guaranteed by test in production.

2. Guaranteed by design.

3. With a minimum of 200 mV.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order).

Unit

V nA

µA k Ω k Ω pF

84/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ±20 mA with the non-standard V

specifications given in Table 42

In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in

Section 6.2

• The sum of the currents sourced by all the I/Os on V

DD,

I consumption of the MCU sourced on V

DD,

VDD( Σ )

(see

Table 10

). plus the maximum Run cannot exceed the absolute maximum rating

• The sum of the currents sunk by all the I/Os on V

I consumption of the MCU sunk on V

VSS( Σ )

(see Table 10

plus the maximum Run

cannot exceed the absolute maximum rating

Output voltage levels

Unless otherwise specified, the parameters given in

Table 42 are derived from tests

performed under the conditions summarized in Table 12

. All I/Os are CMOS and TTL compliant.

Symbol

Table 42. Output voltage characteristics

Parameter Conditions Min Max Unit

(1)(2)

(2)(3)

(3)(4)

(1)(4)

(3)(4)

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

Output low level voltage for an I/O pin

Output high level voltage for an I/O pin

2.7 V < V

1.65 V < V

= 8 mA

< 3.6 V

= 4 mA

= 20 mA

2.7 V < V

< 3.6 V

-0.45

-0.4

-1.3

0.4

0.45

1.3

1. The I

current sunk by the device must always respect the absolute maximum rating specified in Table 10

and the sum of I

(I/O ports and control pins) must not exceed I

VSS

2. Guaranteed by test in production.

3. The I

current sourced by the device must always respect the absolute maximum rating specified in

Table 10

and the sum of I

(I/O ports and control pins) must not exceed I

VDD

4. Guaranteed by characterization results.

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108

Electrical characteristics STM32L162VD-X

Input/output AC characteristics

The definition and values of input/output AC characteristics are given in

Figure 15

and

Table 43 , respectively.

Unless otherwise specified, the parameters given in

Table 43 are derived from tests

performed under the conditions summarized in Table 12

Table 43. I/O AC characteristics (1)

OSPEEDRx

[1:0] bit value (1)

Symbol Parameter Conditions Min Max

(2)

Unit

11 f max(IO)out t f(IO)out t r(IO)out f max(IO)out t f(IO)out t r(IO)out t f(IO)out t r(IO)out

Maximum frequency

(3)

Output rise and fall time

Maximum frequency

(3)

Output rise and fall time

F max(IO)out

Maximum frequency

(3)

F max(IO)out

Maximum frequency

(3) t f(IO)out t r(IO)out

Output rise and fall time

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 50 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 30 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

= 30 pF, V

= 2.7 V to 3.6 V

= 50 pF, V

= 1.65 V to 2.7 V

125

250

400

625

625 kHz ns

MHz ns

MHz

EXTIpw

Pulse width of external signals detected by the

EXTI controller

8 ns

1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the STM32L151xx, STM32L152xx and STM32L162xx reference manual for a description of GPIO Port configuration register.

2. Guaranteed by design.

3. The maximum frequency is defined in

Figure 15

86/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Figure 15. I/O AC characteristics definition

90% 10%

50%

10%

50%

90%

EXTERNAL

OUTPUT

ON 50pF tr(IO)out

T tf(IO)out

Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%) when loaded by 50pF ai14131c

6.3.14 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, R

(see Table 44 )

Unless otherwise specified, the parameters given in

Table 44 are derived from tests

performed under the conditions summarized in Table 12

Symbol Parameter

Table 44. NRST pin characteristics

Conditions Min Typ Max Unit

IL(NRST)

(1)

IH(NRST)

(1)

NRST input low level voltage

NRST input high level voltage

0.39V

+0.59

0.3 V

OL(NRST)

(1)

NRST output low level voltage

= 2 mA

2.7 V < V

< 3.6 V

= 1.5 mA

1.65 V < V

< 2.7 V

0.4

V hys(NRST)

F(NRST)

(1)

NF(NRST)

(3)

NRST Schmitt trigger voltage hysteresis

Weak pull-up equivalent resistor

(3)

NRST input filtered pulse

NRST input not filtered pulse

350

10%V

(2)

1. Guaranteed by design.

2. With a minimum of 200 mV.

3. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is around 10%.

V mV

Ω ns ns

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108

Electrical characteristics STM32L162VD-X

Figure 16. Recommended NRST pin protection

External reset circuit(1)

NRST

(2)

RPU

Filter

Internal reset

0.1 μF

STM32L1xx ai17854b

1. The reset network protects the device against parasitic resets. 0.1 uF capacitor must be placed as close as possible to the chip.

2. The user must ensure that the level on the NRST pin can go below the V

Table 44 . Otherwise the reset will not be taken into account by the device.

max level specified in

The parameters given in the

Table 45 are guaranteed by design.

Refer to Section 6.3.13: I/O port characteristics for details on the input/output ction

characteristics (output compare, input capture, external clock, PWM output).

Symbol

Table 45. TIMx (1) characteristics

Parameter Conditions Min t t res(TIM) f

EXT

Res

TIM

COUNTER

Timer resolution time

Timer external clock frequency on CH1 to CH4

Timer resolution

16-bit counter clock period when internal clock is selected (timer’s prescaler disabled)

TIMxCLK

= 32 MHz 31.25

0 f

TIMxCLK

= 32 MHz

TIMxCLK

= 32 MHz 0.0312

MAX_COUNT

Maximum possible count

TIMxCLK

= 32 MHz -

1. TIMx is used as a general term to refer to the TIM2, TIM3 and TIM4 timers.

Max

TIMxCLK

65536

2048 µs

65536 × 65536 t

TIMxCLK

134.2

Unit t

TIMxCLK ns

MHz

MHz bit t

TIMxCLK

88/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

I

C interface characteristics

The device I

C interface meets the requirements of the standard I

C communication protocol with the following restrictions: SDA and SCL are not “true” open-drain I/O pins.

When configured as open-drain, the PMOS connected between the I/O pin and V

DD is disabled, but is still present.

The I

C characteristics are described in

Table 46

. Refer also to

Section 6.3.13: I/O port characteristics for more details on the input/output ction characteristics (SDA and SCL).

Symbol Parameter

Table 46. I 2 C characteristics

Standard mode

(1) (2)

Min Max

Fast mode I

(1) (2)

Unit

Min Max t w(SCLL) t w(SCLH) t su(SDA) t h(SDA) t r(SDA) t r(SCL) t f(SDA) t f(SCL) t h(STA)

SCL clock low time

SCL clock high time

SDA setup time

SDA data hold time

SDA and SCL rise time

SDA and SCL fall time

4.7

4.0

250

3450

(3)

1000

300

1.3

0.6

100

900

(3)

300

µs ns t t su(STA) su(STO) t w(STO:STA) t

C b

Start condition hold time

Repeated Start condition setup time

Stop condition setup time

Stop to Start condition time

(bus free)

Capacitive load for each bus line

Pulse width of spikes that are suppressed by the analog filter

4.0

4.7

4.0

4.7

400

50 (4)

0.6

0.6 -

0.6

1.3

400

(4)

µs

μ pF ns

1. Guaranteed by design.

2. f

PCLK1 must be at least 2 MHz to achieve standard mode I ² C frequencies. It must be at least 4 MHz to achieve fast mode I²C frequencies. It must be a multiple of 10 MHz to reach the 400 kHz maximum I²C fast mode clock.

3. The maximum Data hold time has only to be met if the interface does not stretch the low period of SCL signal.

4. The minimum width of the spikes filtered by the analog filter is above t

SP(max)

. s s

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108

Electrical characteristics STM32L162VD-X

Figure 17. I 2 C bus AC waveforms and measurement circuit

DD_I2C

C bus

SDA

SCL

STM32L1xx

START REPEATED

START t su(STA)

START

SDA t f(SDA) t r(SDA) t su(SDA)

STOP t su(STA:STO) t h(STA) t w(SCKL) t h(SDA)

SCL t w(SCKH) t r(SCK) t f(SCK) t su(STO) ai17855c

1. R

= series protection resistor.

2. R

= external pull-up resistor.

3. V

DD_I2C

is the I2C bus power supply.

4. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

Table 47. SCL frequency (f

PCLK1

= 32 MHz, V

= V

DD_I2C

= 3.3 V)

(1)(2)

I2C_CCR value f

SCL

(kHz)

= 4.7 k Ω

400

300

200

100

0x801B

0x8024

0x8035

0x00A0

0x0140

0x0320

1. R

= External pull-up resistance, f

SCL

= I 2 C speed.

2. For speeds around 200 kHz, the tolerance on the achieved speed is of ± 5%. For other speed ranges, the tolerance on the achieved speed is ± 2%. These variations depend on the accuracy of the external components used to design the application.

90/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

SPI characteristics

Unless otherwise specified, the parameters given in the following table are derived from

tests performed under the conditions summarized in Table 12

Refer to Section 6.3.12: I/O current injection characteristics for more details on the

input/output alternate function characteristics (NSS, SCK, MOSI, MISO).

Symbol Parameter

Table 48. SPI characteristics (1)

Conditions Min Max

(2)

Unit

Master mode f

SCK

1/t c(SCK)

SPI clock frequency Slave mode

Slave transmitter t t r(SCK)

(2) f(SCK)

(2)

SPI clock rise and fall time Capacitive load: C = 30 pF

DuCy(SCK) SPI slave input clock duty cycle Slave mode

(3)

MHz ns

% t su(NSS) t h(NSS) t t w(SCKH)

(2) w(SCKL)

(2) t su(MI)

(2) t su(SI)

(2) t h(MI)

(2) t h(SI)

(2) t a(SO)

(4) t v(SO)

(2) t v(MO)

(2) t h(SO)

(2) t h(MO)

(2)

NSS setup time

NSS hold time

SCK high and low time

Data input setup time

Data input hold time

Data output access time

Data output valid time

Data output hold time

Slave mode

Master mode

Slave mode

Master mode

Slave mode

Master mode

Slave mode

Master mode t

HCLK

SCK

/2 − 5 t

SCK

0.5

HCLK

/2 +3

6.5

1. The characteristics above are given for voltage range 1.

2. Guaranteed by characterization results.

3. The maximum SPI clock frequency in slave transmitter mode is given for an SPI slave input clock duty cycle (DuCy(SCK)) ranging between 40 to 60%.

4. Min time is for the minimum time to drive the output and max time is for the maximum time to validate the data.

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108

Electrical characteristics

Figure 18. SPI timing diagram - slave mode and CPHA = 0

STM32L162VD-X

Figure 19. SPI timing diagram - slave mode and CPHA = 1 (1)

NSS input t

SU(NSS)

CPHA=1

CPOL=0

CPHA=1

CPOL=1 t w(SCKH) t w(SCKL) t a(SO)

MISO

OUTPUT

MOSI

INPUT t su(SI) t v(SO)

MSB OUT t h(SI)

MSB IN t c(SCK) t h(SO)

BIT6 OUT

BIT 1 IN t h(NSS) t r(SCK) t f(SCK) t dis(SO)

LSB OUT

LSB IN

1. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

ai14135b

92/120 DocID027268 Rev 4

STM32L162VD-X

Figure 20. SPI timing diagram - master mode (1)

Electrical characteristics

NSS input

High

CPHA= 0

CPOL=0

CPHA= 0

CPOL=1 tc(SCK)

CPHA=1

CPOL=0

CPHA=1

CPOL=1

MISO

INP UT

MOSI

OUTPUT tsu(MI) tw(SCKH) tw(SCKL)

MSB IN th(MI)

MSB OUT tv(MO)

BIT6 IN

B I T1 OUT th(MO)

1. Measurement points are done at CMOS levels: 0.3V

and 0.7V

DD.

tr(SCK) tf(SCK)

LSB IN

LSB OUT ai14136c

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Electrical characteristics STM32L162VD-X

USB characteristics

The USB interface is USB-IF certified (full speed).

Symbol

Table 49. USB startup time

Parameter t

STARTUP

(1)

USB transceiver startup time

1. Guaranteed by design.

Max

Unit

µs

Symbol

Table 50. USB DC electrical characteristics

Parameter Conditions Min.

(1)

Input levels

(2)

USB operating voltage

Differential input sensitivity I(USB_DP, USB_DM)

Differential common mode range Includes V

Single ended receiver threshold

Output levels

DI range

(3)

Static output level low

Static output level high

of 1.5

k Ω to 3.6 V

of 15 k Ω to V

1. All the voltages are measured from the local ground potential.

2. Guaranteed by characterization results.

3. Guaranteed by test in production.

4. R

is the load connected on the USB drivers.

(4)

3.0

0.2

0.8

1.3

2.8

Max.

(1) Unit

Differential data lines

CRS

Figure 21. USB timings: definition of data signal rise and fall time

Cross over points

SS t f t r

Table 51. USB: full speed electrical characteristics

Driver characteristics

(1)

Symbol t r t f t rfm

CRS

Rise time

(2)

Fall Time (2)

Parameter

Rise/ fall time matching

Output signal crossover voltage

Conditions

= 50 pF

= 50 pF t r

/t f

Min

1.3

Max

110

2.0

3.6

2.5

2.0

0.3

3.6

Unit ns ns

V ai14137b

94/120 DocID027268 Rev 4

STM32L162VD-X

Note:

Electrical characteristics

1. Guaranteed by design.

2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

I2S characteristics

Symbol Parameter

Table 52. I2S characteristics

Conditions f

MCK f

I2S Main Clock Output

I2S clock frequency

Master data: 32 bits

Slave data: 32 bits

CK t r(CK) t f(CK) t v(WS) t h(WS) t su(WS) t h(WS) t su(SD_MR) t su(SD_SR) t h(SD_MR) t h(SD_SR)

I2S clock frequency duty cycle Slave receiver, 48KHz

I2S clock rise time

I2S clock fall time

WS valid time

WS hold time

WS setup time

WS hold time

Data input setup time

Data input hold time

Capacitive load CL=30pF

Master mode

Slave mode

Master receiver

Slave receiver

Master receiver

Slave receiver t t v(SD_ST) h(SD_ST)

Data output valid time

Data output hold time

Slave transmitter

(after enable edge)

Slave transmitter

(after enable edge) t t v(SD_MT) h(SD_MT)

Data output valid time

Data output hold time

Master transmitter

(after enable edge)

Master transmitter

(after enable edge)

1. The maximum for 256xFs is 8 MHz

Min Max

256 x 8K 256xFs

(1)

64xFs

15 -

Unit

MHz

% ns

Refer to the I2S section of the product reference manual for more details about the sampling frequency (Fs), f

MCK

, f

and D

values. These values reflect only the digital peripheral behavior, source clock precision might slightly change them. DCK depends mainly on the

ODD bit value, digital contribution leads to a min of (I2SDIV/(2*I2SDIV+ODD) and a max of

(I2SDIV+ODD)/(2*I2SDIV+ODD). Fs max is supported for each mode/condition.

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108

Electrical characteristics STM32L162VD-X

Figure 22. I 2 S slave timing diagram (Philips protocol) (1)

1. Measurement points are done at CMOS levels: 0.3 × V

DD and 0.7 × V

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

Figure 23. I 2 S master timing diagram (Philips protocol) (1)

96/120

1. Guaranteed by characterization results.

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.

DocID027268 Rev 4

STM32L162VD-X Electrical characteristics f

ADC

Unless otherwise specified, the parameters given in

Table 54 are guaranteed by design.

Symbol Parameter

ADC clock frequency

Voltage range 1 & 2

Table 53. ADC clock frequency

Conditions

2.4 V ≤ V

DDA

≤

1.8 V ≤ V

DDA

≤

REF+ =

DDA

REF+

< V

DDA

> 2.4 V

REF+

< V

DDA

REF+

REF+ =

DDA

REF+

< V

DDA

Voltage range 3

Min

0.480

Max

Unit

MHz

Symbol

DDA

REF+

REF-

VDDA

Parameter

Power supply

Positive reference voltage

Negative reference voltage

Current on the V

DDA

input pin

VREF

(2)

AIN f

Current on the V

REF

input pin

Conversion voltage range

(3)

12-bit sampling rate

10-bit sampling rate

8-bit sampling rate

6-bit sampling rate

Table 54. ADC characteristics

Conditions

Peak

Average

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Direct channels

Multiplexed channels

Min

1.8

(1)

(4)

Typ Max

SSA

1000

400

3.6

DDA

1450

700

450

REF+

0.76

1.07

0.8

1.23

0.89

1.45

Unit

µA

Msps

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108

Electrical characteristics STM32L162VD-X

Symbol Parameter

Table 54. ADC characteristics (continued)

Conditions Min Typ Max Unit t

(5)

Sampling time

Direct channels

2.4 V ≤

DDA

3.6 V

Multiplexed channels

2.4 V ≤

DDA

3.6 V

Direct channels

1.8 V ≤

DDA

2.4 V

Multiplexed channels

1.8 V ≤

DDA

2.4 V

ADC

= 16 MHz

0.25

0.56

1 -

µs t

CONV

Total conversion time

(including sampling time)

384 1/f

ADC

24.75

µs

4 to 384 (sampling phase) +12

(successive approximation)

1/f

ADC

Internal sample and hold capacitor

Direct channels

Multiplexed channels

R f f

TRIG

AIN

(6)

External trigger frequency

Regular sequencer

External trigger frequency

Injected sequencer

Signal source impedance

12-bit conversions

6/8/10-bit conversions

12-bit conversions

6/8/10-bit conversions

Tconv+1 1/f

ADC

Tconv 1/f

ADC

Tconv+2 1/f

ADC

Tconv+1 1/f

ADC

50 k Ω

281 ns t lat t latr

Injection trigger conversion latency

Regular trigger conversion latency f f

ADC

= 16 MHz

219

3.5

156

2.5

4.5

219

3.5

1/f

ADC t

STAB

Power-up time 3.5

1. The Vref+ input can be grounded if neither the ADC nor the DAC are used (this allows to shut down an external voltage reference).

2. The current consumption through VREF is composed of two parameters:

- one constant (max 300 µA)

- one variable (max 400 µA), only during sampling time + 2 first conversion pulses

So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at

1Msps

3. V can be internally connected to V

Refer to Section 4: Pin descriptions

DDA

and V

for further details.

can be internally connected to V

SSA

, depending on the package.

4. V

SSA

or V

REF-

must be tied to ground.

5. Minimum sampling time is reached for an external input impedance limited to a value as defined in

Table 56: Maximum source impedance R

AIN

max .

6. External impedance has another high value limitation when using short sampling time as defined in Table 56: Maximum source impedance R

AIN

max .

1/f

ADC

µs

98/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Symbol Parameter

Table 55. ADC accuracy (1)(2)

Test conditions Min

(3)

Typ Max

(3)

Unit

Total unadjusted error

Offset error

Gain error

Differential linearity error

EL Integral linearity error

ENOB Effective number of bits

SINAD

Signal-to-noise and distortion ratio

SNR Signal-to-noise ratio

THD Total harmonic distortion

ENOB Effective number of bits

SINAD

Signal-to-noise and distortion ratio

SNR Signal-to-noise ratio

THD Total harmonic distortion

ET Total unadjusted error

EO Offset error

Gain error

Differential linearity error

Integral linearity error

Total unadjusted error

Offset error

Gain error

Differential linearity error

Integral linearity error f

2.4 V ≤ V

ADC

DDA

≤ 3.6 V

REF+

≤ 3.6 V

= 8 MHz, R

AIN

= -40 to 105 ° C

2.4 V ≤ V

DDA

= f

ADC input

= 50 Ω

DDA

≤ 3.6 V

REF+

= 16 MHz, R

AIN

= -40 to 105 ° C

=10kHz

= 50 Ω f

2.4 V ≤ V

DDA

≤ 3.6 V

1.8 V ≤ V

REF+

≤ 2.4 V

= 4 MHz, R

AIN

= 50 Ω

ADC

= -40 to 105 ° C f

1.8 V ≤ V

DDA

≤ 2.4 V

1.8 V ≤ V

REF+

≤ 2.4 V

= 4 MHz, R

AIN

= 50 Ω

ADC

= -40 to 105 ° C

9.2

57.5

9.2

57.5

2.5

1.5

2.2

-70

1.5

2.2

-70

1.5

3.5

2.5

3.5

-65

LSB bits dB bits

1.8 V ≤ V

DDA

≤ 2.4 V

V f

ADC

DDA

REF+

= 8 MHz or 4 MHz, R

AIN

= -40 to 105 ° C input

=10kHz

= 50 Ω

57.5

LSB

1. ADC DC accuracy values are measured after internal calibration.

2. ADC accuracy vs. negative injection current: Injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.

Any positive injection current within the limits specified for I accuracy.

INJ(PIN)

and Σ I

INJ(PIN)

Section 6.3.12

does not affect the ADC

3. Guaranteed by characterization results.

1.5

-65

6.5

DocID027268 Rev 4 99/120

108

Electrical characteristics STM32L162VD-X

Figure 24. ADC accuracy characteristics

4095

4094

4093

[1LSB IDEAL =

REF+

4096

DDA

(or depending on package)

4096

(2)

(3)

V SSA

1 2

1 LSB

3 4 5 6

IDEAL

(1)

4093 4094 4095 4096

V DDA

(1) Example of an actu al transfe r curve

(2) The ideal transfer cu rve

(3) End point correlation line

T between the actual and the ideal transfer curves.

= Total unadjusted Error: maximum deviation

= Offset Error: deviation between the first actual transition and the last actual one.

= Gain Error: deviation between the last ideal transition and the last actual one.

= Differential Linearity Error: maximum deviation between actual steps and the ideal one.

= Integral Linearity Error: maximum deviation between any actual transition and the end-point correlation line.

ai14395e

Figure 25. Typical connection diagram using the ADC

DDA

AIN

(1) AINx

Cparasitic

IL± 50 nA

STM32Lxx

Sample and hold

ADC converter

12-bit converter

ADC

(1) ai17856e

1. Refer to Table 56: Maximum source impedance R characteristics for the value of C

ADC

AIN

max for the value of R

AIN

and Table 54: ADC

2. C parasitic

represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 7 this, f

ADC pF). A high C

should be reduced.

parasitic

value will downgrade conversion accuracy. To remedy

100/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Figure 26. Maximum dynamic current consumption on V

REF+ conversion

supply pin during ADC

Conversion (12 cycles )

ADC clock

I ref+

700µA

Sampling (n cycles)

300µA

MS36686V1

1.5

Table 56. Maximum source impedance R

AIN

max (1)

AIN

max (k Ω )

(µs)

Multiplexed channels Direct channels

0.25

0.5625

2.4 V < V

DDA

< 3.6 V 1.8 V < V

DDA

< 2.4 V 2.4 V < V

DDA

< 3.6 V 1.8 V < V

DDA

< 2.4 V

Not allowed

0.8

Not allowed

0.7

2.0

Not allowed

1.0

Ts (cycles) f

ADC

=16 MHz

(2)

2.0

3.0

6.8

15.0

32.0

50.0

0.8

1.8

4.0

10.0

25.0

50.0

4.0

6.0

15.0

30.0

50.0

3.0

4.5

10.0

20.0

40.0

50.0

192

384

1. Guaranteed by design.

2. Number of samples calculated for f = 16 MHz. For f with respect to the minimum sampling time Ts (µs),

ADC

= 8 and 4 MHz the number of sampling cycles can be reduced

General PCB design guidelines

Power supply decoupling should be performed as shown in

Figure 8 . The applicable

procedure depends on whether V

REF+

is connected to V

DDA

or not. The 100 nF capacitors should be ceramic (good quality). They should be placed as close as possible to the chip.

DocID027268 Rev 4 101/120

108

Electrical characteristics STM32L162VD-X

Data guaranteed by design, unless otherwise specified.

Symbol

DDA

REF+

REF-

DDVREF+

(1)

DDA

(1)

(2)

Parameter

Table 57. DAC characteristics

Conditions

Analog supply voltage -

Reference supply voltage

Lower reference voltage

REF+

must always be below

DDA

Current consumption on

REF+

supply

= 3.3 V

Current consumption on

DDA

supply

= 3.3 V

No load, middle code (0x800)

No load, worst code (0x000)

No load, middle code (0x800)

No load, worst code (0xF1C)

Resistive load

Capacitive load

DAC output buffer ON

Connected to

SSA

Conected to

DDA

DAC output buffer ON

Output impedance DAC output buffer OFF

Min

1.8

DAC output buffer ON 0.2

DAC_OUT

Voltage on DAC_OUT output

DAC output buffer OFF 0.5

DNL

INL

(1)

Offset (1)

Offset1 (1)

Differential non linearity

0x001

(6)

(3)

Integral non linearity

(4)

Offset error at code

0x800

(5)

Offset error at code

≤

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

≤

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

≤

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

No R

, C

≤ 50 pF

DAC output buffer OFF

1.5

±10

±5

±1.5

Typ

SSA

130

220

210

320

Max

3.6

Unit

220

350

320

520

µA k Ω pF k Ω

DDA

– 0.2

REF+

1LSB

– mV

±25

±8

±5

LSB

102/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Symbol Parameter

Table 57. DAC characteristics (continued)

Conditions t t dOffset/dT

(1)

Gain

(1) dGain/dT

TUE

(1)

SETTLING

(1)

Update rate

WAKEUP

PSRR+

Offset error temperature coefficient (code 0x800)

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer OFF

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer ON

Gain error

(7)

≤

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

Gain error temperature coefficient

Total unadjusted error

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer OFF

DDA

REF+

= 3.3V

= 3.0V

= 0 to 50 ° C

DAC output buffer ON

≤

≥ 5 k Ω

DAC output buffer ON

No R

, C

≤ 50 pF

DAC output buffer OFF

Settling time (full scale: for a 12-bit code transition between the lowest and the highest input codes till

DAC_OUT reaches final value ±1LSB

≤

≥ 5 k Ω

Max frequency for a correct DAC_OUT change (95% of final value) with 1 LSB variation in the input code

DDA

supply rejection ratio (static DC measurement)

Wakeup time from off state (setting the ENx bit in the DAC Control register)

(8)

≤

≥ 5 k Ω

≤

≥ 5 k Ω

1. Data based on characterization results.

2. Connected between DAC_OUT and VSSA.

3. Difference between two consecutive codes - 1 LSB.

Min

-20

-10

-40

Typ

-10

Max

+0.1 / -0.2% +0.2 / -0.5%

+0 / -0.2% +0 / -0.4%

-2

-8

-60 -35

Unit

µV/°C

LSB

µs

Msps

µs dB

DocID027268 Rev 4 103/120

108

Electrical characteristics STM32L162VD-X

4. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.

5. Difference between the value measured at Code (0x800) and the ideal value = V

REF+

/2.

6. Difference between the value measured at Code (0x001) and the ideal value.

7. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when buffer is OFF, and from code giving 0.2 V and (V

DDA

– 0.2) V when buffer is ON.

8. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).

Figure 27. 12-bit buffered /non-buffered DAC

Buffered/Non-buffered DAC

Buffer(1)

R L

12-bit digital to analog converter

DAC_OUTx

C L ai17157V3

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the DAC_CR register.

Symbol

Table 58. Operational amplifier characteristics

Parameter

CMIR

OFFSET

Δ VI

OFFSET

LOAD

CMRR

Common mode input range

Input offset voltage

Maximum calibration range

After offset calibration

Input offset voltage drift

Normal mode

Low-power mode

Input current bias

Dedicated input

General purpose input

Normal mode

Drive current

Consumption

Common mode rejection ration

Low-power mode

Normal mode

Low-power mode

Normal mode

Low-power mode

Condition

(1)

75 °C

No load, quiescent mode

Min

(2)

Typ

100

-85

-90

Max

(2)

± 15

Unit

± 1.5

± 40

± 80

500

100

220

µV/°C

µA

µA dB

104/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

Symbol

Table 58. Operational amplifier characteristics (continued)

Parameter Condition (1) Min (2) Typ Max (2) Unit

PSRR

GBW

Power supply rejection ratio

Bandwidth

Normal mode

Low-power mode

Normal mode

Low-power mode

>2.4 V

Normal mode

Low-power mode

<2.4 V

Normal mode

>2.4 V

(between 0.1 V and

-0.1 V)

Low-power mode V

>2.4 V

Normal mode

Low-power mode

<2.4 V

400

150

200

-85

-90

1000

300

500

150

700

3000

800

2200

800

dB kHZ

SR Slew rate

100

300

50 -

AO Open loop gain

Normal mode

Low-power mode

100

110

VOH

SAT

VOL

SAT ϕ m

Resistive load

Capacitive load

High saturation voltage

Low saturation voltage

Phase margin

Gain margin

Normal mode

Low-power mode

Normal mode

Low-power mode

Normal mode

Low-power mode

<2.4 V

LOAD

= max or

= min

100

-50 -

-12

100

OFFTRIM

Offset trim time: during calibration, minimum time needed between two steps to have 1 mV accuracy

1 t

WAKEUP

Wakeup time

Normal mode

Low-power mode

≤ 50 pf,

≥ 4 k Ω

≤ 50 pf,

≥ 20 k Ω

30 -

1. Operating conditions are limited to junction temperature (0 °C to 105 °C) when V ambient temperature range (-40 °C to 85 °C, -40 °C to 105 °C).

is below 2 V. Otherwise to the full

2. Guaranteed by characterization results.

V/ms dB k pF mV

Ω dB ms

µs

DocID027268 Rev 4 105/120

108

Electrical characteristics STM32L162VD-X

6.3.20 Temperature sensor characteristics

Table 59. Temperature sensor calibration values

Calibration value name Description Memory address

TS_CAL1

TS_CAL2

TS ADC raw data acquired at temperature of 30 °C ± 5 °C

DDA

= 3 V ± 10 mV

TS ADC raw data acquired at temperature of 110 °C ± 5 °C

DDA

= 3 V ± 10 mV

0x1FF8 00FA - 0x1FF8 00FB

0x1FF8 00FE - 0x1FF8 00FF

Symbol

(1)

Avg_Slope

110

DDA (TEMP)

(3) t

START

(3)

S_temp

(3)

(1)

Table 60. Temperature sensor characteristics

Parameter

SENSE

linearity with temperature

Average slope

Voltage at 110°C ±5°C

(2)

Current consumption

Startup time

ADC sampling time when reading the temperature

Min

1.48

612

Typ

1.61

626.8

3.4

Max

± 2

1.75

641.5

1. Guaranteed by characterization results.

2. Measured at V

= 3 V ±10 mV. V110 ADC conversion result is stored in the TS_CAL2 byte.

3. Guaranteed by design.

6.3.21 Comparator

Symbol

Table 61. Comparator 1 characteristics

Parameter Conditions Min

(1)

DDA

400K

10K

IN t

START td

Analog supply voltage

400K

value

10K

value

Comparator 1 input voltage range

Comparator startup time

Propagation delay

(2)

Voffset

/dt

COMP1

Comparator offset

Comparator offset variation in worst voltage stress conditions

Current consumption

(3)

DDA

IN+

IN-

= 3.6 V

= 0 V

= V

REFINT

= 25 ° C

1.65

0.6

Typ

± 3

400

1.5

160

Max

(1)

3.6

DDA

± 10

260

µs

Unit

V k Ω

Unit

°C mV/°C mV

µA

µs mV mV/1000 h nA

106/120 DocID027268 Rev 4

STM32L162VD-X Electrical characteristics

1. Guaranteed by characterization results.

2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the noninverting input set to the reference.

3. Comparator consumption only. Internal reference voltage not included.

Symbol

Table 62. Comparator 2 characteristics

Parameter Conditions Min Typ Max

(1)

Unit

I t t

DDA

IN t

START

V d slow d fast offset dThreshold/ dt

COMP2

Analog supply voltage

Comparator 2 input voltage range

Comparator startup time

Propagation delay

(2)

in slow mode

Propagation delay coefficient

(2)

Current consumption

in fast mode

Comparator offset error

Threshold voltage temperature

(3)

Fast mode

Slow mode

1.65 V ≤ V

DDA

≤

2.7 V ≤

DDA

≤ 3.6 V

1.65 V ≤ V

DDA

≤

2.7 V ≤

DDA

≤ 3.6 V

DDA

V- =V

3/4 V

REFINT

1/2 V

1/4 V

= 3.3V

= 0 to 50 ° C

REFINT

Fast mode

1.65

0 -

1.8

2.5

0.8

1.2

± 4

3.5

0.5

3.6

DDA

3.5

µs

± 20 mV

100

1. Guaranteed by characterization results.

2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the noninverting input set to the reference.

3. Comparator consumption only. Internal reference voltage (necessary for comparator operation) is not included.

ppm

/°C

µA

DocID027268 Rev 4 107/120

108

Electrical characteristics STM32L162VD-X

The device embeds a built-in step-up converter to provide a constant LCD reference voltage independently from the V

LCD

voltage. An external capacitor C

pin to decouple this converter.

ext

must be connected to the

Symbol

Table 63. LCD controller characteristics

Parameter Min Typ Max Unit

LCD

LCD0

LCD1

LCD2

LCD3

LCD4

LCD5

LCD6

LCD7

C ext

LCD external voltage

LCD internal reference voltage 0

LCD internal reference voltage 1

LCD internal reference voltage 2

LCD internal reference voltage 3

LCD internal reference voltage 4

LCD internal reference voltage 5

LCD internal reference voltage 6

LCD internal reference voltage 7 -

2.6

2.73

2.86

2.98

3.12

3.26

3.4

3.55

3.6

LCD

(1)

LCD

external capacitance

Supply current at V

= 2.2 V

Supply current at V

= 3.0 V

Low drive resistive network overall value

0.1

3.3

3.1

µF

µA

Htot

(2)

High drive resistive network total value

Segment/Common highest level voltage

Segment/Common 3/4 level voltage

Segment/Common 2/3 level voltage

Segment/Common 1/2 level voltage

Segment/Common 1/3 level voltage

Segment/Common 1/4 level voltage

Segment/Common lowest level voltage

5.28

192

6.6

240

3/4 V

2/3 V

1/2 V

1/3 V

1/4 V

LCD

7.92

288

LCD

M k

Δ Vxx

(3)

Segment/Common level voltage error

= -40 to 105 ° C

± 50 mV

1. LCD enabled with 3 V internal step-up active, 1/8 duty, 1/4 bias, division ratio= 64, all pixels active, no LCD connected.

2. Guaranteed by design.

3. Guaranteed by characterization results.

108/120 DocID027268 Rev 4

STM32L162VD-X Package information

7.1

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com

ECOPACK ® is an ST trademark.

LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package information

Figure 28. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline

SEATING PLANE

C c

0.25 mm

GAUGE PLANE ccc C

L K

75 51

100

PIN 1

IDENTIFICATION

1 25 e

1L_ME_V5

1. Drawing is not to scale.

Table 64. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data millimeters inches

(1)

Symbol

Min Typ Max Min Typ Max

0.050

1.350

1.400

1.600

0.150

1.450

0.0020

0.0531

0.0551

0.0630

0.0059

0.0571

DocID027268 Rev 4 109/120

119

Package information

STM32L162VD-X

Table 64. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data (continued) millimeters inches (1)

Symbol

Min Typ Max Min Typ Max

E1 b c

0.170

0.090

15.800

13.800

15.800

13.800

0.220

16.000

14.000

12.000

16.000

14.000

0.270

0.200

16.200

14.200

16.200

14.200

E3 e

0.450

12.000

0.500

0.600

1.000

0.750

0.0177

k ccc

0.0°

3.5°

7.0°

0.080

0.0°

1. Values in inches are converted from mm and rounded to 4 decimal digits.

0.0067

0.0035

0.6220

0.5433

0.6220

0.5433

0.4724

0.0197

0.0236

0.0394

3.5°

0.0087

0.6299

0.5512

0.4724

0.6299

0.5512

0.0295

7.0°

0.0031

0.0106

0.0079

0.6378

0.5591

0.6378

0.5591

Figure 29. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package recommended footprint

75 51

0.5

0.3

16.7

14.3

100

1 25

1.2

12.3

16.7

MS34179V1

1. Dimensions are in millimeters.

110/120 DocID027268 Rev 4

STM32L162VD-X Package information

LQFP100 device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier location.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 30. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package top view example

Product identification

(1)

STM32L162

VDT6 R

Date code

Y WW

Revision code

Pin 1 indentifier

MSv48362V1

1. Parts marked as ES or E or accompanied by an engineering sample notification letter are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.

DocID027268 Rev 4 111/120

119

Package information

7.2

STM32L162VD-X

WLCSP104, 0.4 mm pitch wafer level chip scale package information

Figure 31. WLCSP104, 0.4 mm pitch wafer level chip scale package outline e1

A1 ball location bbb Z

Detail A e2 e e

Bottom view

Bump side

Side view

E reference

A1 orientation aaa Z

Top view

Wafer back side

1. Drawing is not to scale.

Bump

A3 eee Z A1

Ø ccc

Ø ddd

Øb

X Y

Seating

Detail A

Rotated 90°

plane

A0YY_ME_V2

112/120 DocID027268 Rev 4

STM32L162VD-X Package information

Table 65. WLCSP104, 0.4 mm pitch wafer level chip scale package mechanical data millimeters inches

(1)

Symbol

Min Typ Max Min Typ Max e2

G aaa bbb ccc ddd eee e e1

(2)

ø b

(3)

0.525

0.22

4.06

5.059

0.555

0.175

0.38

0.025

0.25

4.095

5.094

0.4

3.2

4.4

0.447

0.347

0.585

0.28

4.13

5.129

0.1

0.05

1. Values in inches are converted from mm and rounded to 4 decimal digits.

2. Back side coating.

3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

0.0207

0.0087

0.1598

0.1992

0.0157

0.126

0.1732

0.0176

0.0137

0.0219

0.0069

0.015

0.001

0.0098

0.1612

0.2006

0.0039

0.002

0.023

0.011

0.1626

0.2019

Figure 32. WLCSP104, 0.4 mm pitch wafer level chip scale package recommended footprint

Dpad

Dsm

DocID027268 Rev 4

MS18965V2

113/120

119

Package information STM32L162VD-X

Table 66. WLCSP104, 0.4 mm pitch recommended PCB design rules

Dimension Recommended values

Pitch

Dpad

Dsm

PCB pad design

0.4

260 µm max. (circular)

220 µm recommended

300 µm min. (for 260 µm diameter pad)

Non-solder mask defined via underbump allowed.

WLCSP104 device marking

The following figure gives an example of topside marking orientation versus ball A1 identifier location.

Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below.

Figure 33. WLCSP104, 0.4 mm pitch wafer level chip scale package top view example

Product identification(1)

32L162VDY6X

Date code

Y WW R

Revision code

Ball A1 identifier

MS36648V1

114/120 DocID027268 Rev 4

STM32L162VD-X Package information

The maximum chip-junction temperature, T

J using the following equation:

max, in degrees Celsius, may be calculated

max = T

max + (P

max × Θ

)

Where:

• T

max is the maximum ambient temperature in ° C,

• Θ

is the package junction-to-ambient thermal resistance, in ° C/W,

• P

max is the sum of P

INT

max and P

I/O max (P

max = P

INT

max + P

I/O max),

• P

INT

max is the product of I

DD and internal power.

, expressed in Watts. This is the maximum chip

I/O

max represents the maximum power dissipation on output pins where:

I/O

max = Σ (V

× I

) + Σ ((V

– V

) × I

), taking into account the actual V

OL application.

/ I

and V

/ I

OH of the I/Os at low and high level in the

Symbol

Table 67. Thermal characteristics

Parameter

Thermal resistance junction-ambient

LQFP100 - 14 x 14 mm / 0.5 mm pitch

Thermal resistance junction-ambient

WLCSP104 - 0.400 mm pitch

Value

Unit

°C/W

Figure 34. Thermal resistance suffix 6

3000.00

2500.00

Forbidden areaTJ > TJ max

PD (mW)

2000.00

1500.00

1000.00

500.00

0.00

100 75 50 25

Temperature (°C)

WLCSP104 10x10 mm

LQFP 100 14x14 mm

MSv36641V1

DocID027268 Rev 4 115/120

119

Package information

3000.00

Figure 35. Thermal resistance suffix 7

2500.00

Forbidden areaTJ > TJ max

PD (mW)

2000.00

1500.00

1000.00

500.00

0.00

105 75 50 25

Temperature (°C)

WLCSP104 10x10 mm

LQFP 100 14x14 mm

STM32L162VD-X

MSv36642V1

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural

Convection (Still Air). Available from www.jedec.org.

116/120 DocID027268 Rev 4

STM32L162VD-X Ordering information

Table 68. STM32L162VD-X Ordering information scheme

Example:

Device family

STM32 = Arm-based 32-bit microcontroller

STM32 L 162 V D Y 6 X D TR

Product type

L = Low-power

Device subfamily

162: Devices without LCD

Pin count

V = 100/104 pins

Flash memory size

D=384 Kbytes of Flash memory

Package

T = LQFP

Y = WLCSP104

Temperature range

6 = Industrial temperature range, –40 to 85 °C

7 = Industrial temperature range, –40 to 105 °C

Options

X = device generation X

Options

No character = V

range: 1.8 to 3.6 V and BOR enabled

D = V

range: 1.65 to 3.6 V and BOR disabled

Packing

TR = tape and reel

No character = tray or tube

For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the nearest ST sales office.

DocID027268 Rev 4 117/120

119

Revision History STM32L162VD-X

Date

22-Jan-2015

30-Apr-2015

11-Feb-2016

Revision

Table 69. Document revision history

Changes

Initial release.

Updated

Section 7: Package information

structure: paragraph titles and paragraph heading level.

Updated

Section 7: Package information

for WLCSP104 package device marking adding text in for device orientation versus ball A1 identifier.

Updated

Figure 31: WLCSP104, 0.4 mm pitch wafer level chip scale package outline

Updated

Table 65: WLCSP104, 0.4 mm pitch wafer level chip scale package mechanical data .

Added

Figure 32: WLCSP104, 0.4 mm pitch wafer level chip scale package recommended footprint

Added Table 66: WLCSP104, 0.4 mm pitch recommended PCB design rules

Updated

Table 7: STM32L162VD-X pin definitions ADC inputs.

Updated

Table 15: Embedded internal reference voltage

temperature coefficient at 100ppm/°C and table footnote 3: “guaranteed by design” changed by “guaranteed by characterization results”.

Updated

Table 62: Comparator 2 characteristics new maximum

threshold voltage temperature coefficient at 100ppm/°C.

Updated cover page putting eight SPIs in the peripheral communication interface list.

Updated

Table 1: Ultra-low-power STM32L162VD-X device features and peripheral counts SPI and I2S lines.

Updated

Table 38: ESD absolute maximum ratings

CDM class.

Updated all the notes, removing ‘not tested in production’.

Updated

Table 9: Voltage characteristics

adding note about V

REF-

pin.

Updated Table 4: Functionalities depending on the working mode (from

Run/active down to standby)

LSI and LSE functionalities putting “Y” in

Standby mode.

Updated

Table 10: Current characteristics

removing in the note 2, the part linked to LQFP packages.

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STM32L162VD-X Revision History

Date

08-Dec-2017

Table 69. Document revision history (continued)

Revision Changes

Updated

Table 41: I/O static characteristics pull-up and pull-down

values.

Updated

Table 44: NRST pin characteristics pull-up values.

Updated

Section 7: Package information

adding information about other optional marking or inset/upset marks.

Updated note 1 below all the package device marking figures.

Updated

Section 7: Package information

replacing “Marking of engineering samples” by “device marking”.

Updated

Section : Nested vectored interrupt controller (NVIC)

Section 3.2: Arm

Cortex

-M3 core with MPU

about process state automatically saved.

Updated

Table 2: Functionalities depending on the operating power supply range

removing I/O operation column and adding note about

GPIO speed.

Updated

Table 40: I/O current injection susceptibility

note by ‘injection is not possible’.

Updated

Figure 16: Recommended NRST pin protection note about

the 0.1uF capacitor.

Updated

Table 57: DAC characteristics

resistive load.

Updated

Section 3.1: Low-power modes Low-power run mode (MSI)

RC oscillator clock.

Updated

Table 4: Functionalities depending on the working mode

(from Run/active down to standby)

disabling I2C functionality in Lowpower Run and Low-power Sleep modes.

Added LQFP100 package in the whole document.

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