STMicroelectronics STM32F302RE Datasheet

PDF
Document
STM32F302xD STM32F302xE
ARM&reg; Cortex&reg;-M4 32b MCU+FPU, up to 512KB Flash, 64KB SRAM,
FSMC, 2 ADCs, 1 DAC ch., 4 comp, 2 Op-Amp, 2.0-3.6 V
Datasheet - production data
Features
• Core: ARM&reg; Cortex&reg;-M4 32-bit CPU with
72 MHz FPU, single-cycle multiplication and
HW division, DSP instruction and MPU
(memory protection unit)
LQFP64
(10 &times; 10 mm)
LQFP100
(14 &times; 14 mm)
LQFP144
(20 x 20 mm)
• Operating conditions:
– VDD, VDDA voltage range: 2.0 V to 3.6 V
• Memories
– Up to 512 Kbytes of Flash memory
– 64 Kbytes of SRAM, with HW parity check
implemented on the first 32 Kbytes.
– Flexible memory controller (FSMC) for
static memories, with four Chip Select
• CRC calculation unit
• Reset and supply management
– Power-on/Power-down reset (POR/PDR)
– Programmable voltage detector (PVD)
– Low-power modes: Sleep, Stop and
Standby
– VBAT supply for RTC and backup registers
• Clock management
– 4 to 32 MHz crystal oscillator
– 32 kHz oscillator for RTC with calibration
– Internal 8 MHz RC with x 16 PLL option
– Internal 40 kHz oscillator
• Up to 115 fast I/Os
– All mappable on external interrupt vectors
– Several 5 V-tolerant
• Interconnect matrix
• 12-channel DMA controller
• Two ADCs 0.20 &micro;s (up to 18 channels) with
selectable resolution of 12/10/8/6 bits, 0 to
3.6 V conversion range, separate analog
supply from 2.0 to 3.6 V
• One 12-bit DAC channels with analog supply
from 2.4 to 3.6 V
October 2016
This is information on a product in full production.
UFBGA100
(7 x 7 mm)
WLCSP100
(4.775 x 5.041 mm)
• Four ultra-fast rail-to-rail analog comparators
with analog supply from 2.0 to 3.6 V
• Two operational amplifiers that can be used in
PGA mode, all terminals accessible with
analog supply from 2.4 to 3.6 V
• Up to 24 capacitive sensing channels supporting
touchkey, linear and rotary touch sensors
• Up to 11 timers:
– One 32-bit timer and two 16-bit timers with
up to four IC/OC/PWM or pulse counter
and quadrature (incremental) encoder input
– One 16-bit 6-channel advanced-control
timers, with up to six PWM channels,
deadtime generation and emergency stop
– One 16-bit timer with two IC/OCs, one
OCN/PWM, deadtime generation and
emergency stop
– Two 16-bit timers with IC/OC/OCN/PWM,
deadtime generation and emergency stop
– Two watchdog timers (independent,
window)
– One SysTick timer: 24-bit downcounter
– One 16-bit basic timers to drive the DAC
• Calendar RTC with Alarm, periodic wakeup
from Stop/Standby
• Communication interfaces
– CAN interface (2.0B Active)
DocID026900 Rev 4
1/168
www.st.com
STM32F302xD STM32F302xE
– Three I2C Fast mode plus (1 Mbit/s) with
– USB 2.0 full-speed interface with LPM
20 mA current sink, SMBus/PMBus,
support
wakeup from STOP
– Infrared transmitter
– Up to five USART/UARTs (ISO 7816
• SWD, Cortex&reg;-M4 with FPU ETM, JTAG
interface, LIN, IrDA, modem control)
• 96-bit unique ID
– Up to four SPIs, 4 to 16 programmable bit
frames, two with multiplexed half/full duplex
I2S interface
Table 1. Device summary
Reference
Part number
STM32F302xD
STM32F302RD, STM32F302VD, STM32F302ZD.
STM32F302xE
STM32F302RE, STM32F302VE, STM32F302ZE.
2/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Contents
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
ARM&reg; Cortex&reg;-M4 core with FPU with embedded Flash and SRAM . . . 15
3.2
Memory protection unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6
Cyclic redundancy check (CRC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7
Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.1
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.2
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.3
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.4
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8
Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.9
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.10
General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.11
Direct memory access (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.12
Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 21
3.13
Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.13.1
3.14
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 22
Fast analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14.1
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.14.2
Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.14.3
VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.14.4
OPAMP reference voltage (VREFOPAMP) . . . . . . . . . . . . . . . . . . . . . . 23
3.15
Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16
Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.17
Ultra-fast comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.18
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DocID026900 Rev 4
3/168
5
Contents
STM32F302xD STM32F302xE
3.18.1
Advanced timers (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.18.2
General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17) . . 25
3.18.3
Basic timers (TIM6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18.4
Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18.5
Window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18.6
SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.19
Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 27
3.20
Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.21
Universal synchronous/asynchronous receiver transmitter (USART) . . . 28
3.22
Universal asynchronous receiver transmitter (UART) . . . . . . . . . . . . . . . 29
3.23
Serial peripheral interface (SPI)/Inter-integrated sound interfaces (I2S) . 29
3.24
Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.25
Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.26
Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.27
Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.28
Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.28.1
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.28.2
Embedded Trace Macrocell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
4
Pinout and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
6
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1
4/168
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
6.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.3.1
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.3.2
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 69
DocID026900 Rev 4
STM32F302xD STM32F302xE
7
Contents
6.3.3
Embedded reset and power control block characteristics . . . . . . . . . . . 69
6.3.4
Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.3.5
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.3.6
Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.3.7
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
6.3.8
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.9
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
6.3.10
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.11
FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.12
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
6.3.13
Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
6.3.14
I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
6.3.15
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.3.16
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
6.3.17
Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
6.3.18
Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
6.3.19
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.20
DAC electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
6.3.21
Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
6.3.22
Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 143
6.3.23
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.24
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
7.1
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
7.2
LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
7.3
UFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
7.4
LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
7.5
WLCSP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
7.6
LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
7.7
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
7.7.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
7.7.2
Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 163
8
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
DocID026900 Rev 4
5/168
5
List of tables
STM32F302xD STM32F302xE
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
Table 45.
Table 46.
6/168
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
STM32F302xD/E family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . 13
External analog supply values for analog peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STM32F302xD/E peripheral interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
STM32F302xD/E I2C implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
USART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
STM32F302xD/E SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Capacitive sensing GPIOs available on STM32F302xD/E devices . . . . . . . . . . . . . . . . . . 31
Number of capacitive sensing channels available on
STM32F302xD/E devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
STM32F302xD/E pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
STM32F302xD/E alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Memory map, peripheral register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 69
Programmable voltage detector characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Typical and maximum current consumption from VDD supply at VDD = 3.6V . . . . . . . . . . . 71
Typical and maximum current consumption from the VDDA supply . . . . . . . . . . . . . . . . . . 72
Typical and maximum VDD consumption in Stop and Standby modes. . . . . . . . . . . . . . . . 73
Typical and maximum VDDA consumption in Stop and Standby modes. . . . . . . . . . . . . . . 74
Typical and maximum current consumption from VBAT supply. . . . . . . . . . . . . . . . . . . . . . 74
Typical current consumption in Run mode, code with data processing running
from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Typical current consumption in Sleep mode, code running from Flash or RAM . . . . . . . . . 77
Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Wakeup time using USART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . 91
Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . 91
DocID026900 Rev 4
STM32F302xD STM32F302xE
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
Table 62.
Table 63.
Table 64.
Table 65.
Table 66.
Table 67.
Table 68.
Table 69.
Table 70.
Table 71.
Table 72.
Table 73.
Table 74.
Table 75.
Table 76.
Table 77.
Table 78.
Table 79.
Table 80.
Table 81.
Table 82.
Table 83.
Table 84.
Table 85.
Table 86.
Table 87.
Table 88.
Table 89.
Table 90.
Table 91.
Table 92.
Table 93.
Table 94.
Table 95.
Table 96.
Table 97.
List of tables
Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . 92
Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings. . . . . . . . . . . . 93
Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . . 93
Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . . 96
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 100
Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Switching characteristics for PC Card/CF read and write cycles
in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Switching characteristics for PC Card/CF read and write cycles in I/O space . . . . . . . . . 106
Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 109
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
IWDG min/max timeout period at 40 kHz (LSI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
WWDG min-max timeout value @72 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
USB: full-speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
ADC accuracy - limited test conditions, 100-/144-pin packages . . . . . . . . . . . . . . . . . . . 132
ADC accuracy, 100-pin/144-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
ADC accuracy - limited test conditions, 64-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . 135
ADC accuracy, 64-pin packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
ADC accuracy at 1MSPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Operational amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
LQFP144 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
UFBGA100 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
UFBGA100 recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . 152
LQPF100 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
WLCSP100 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
WLCSP100 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . 159
DocID026900 Rev 4
7/168
8
List of tables
Table 98.
Table 99.
Table 100.
Table 101.
8/168
STM32F302xD STM32F302xE
LQFP64 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
DocID026900 Rev 4
STM32F302xD STM32F302xE
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
Figure 43.
Figure 44.
STM32F302xD/E block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STM32F302xD/E clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Infrared transmitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
STM32F302xD/E LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
STM32F302xD/E LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
STM32F302xD/E LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
STM32F302xD/E WLCSP100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
STM32F302xD/E UFBGA100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
STM32F302xD/E memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] 00’) . . . . . . . . . . . . . 75
High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
HSI oscillator accuracy characterization results for soldered parts . . . . . . . . . . . . . . . . . . 88
Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . 90
Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . 92
Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 100
Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
PC Card/CompactFlash controller waveforms for common memory
read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
PC Card/CompactFlash controller waveforms for common memory
write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
PC Card/CompactFlash controller waveforms for attribute memory
read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
PC Card/CompactFlash controller waveforms for attribute memory
write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 107
PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 107
NAND controller read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
NAND controller write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
TC and TTa I/O input characteristics - CMOS port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
TC and TTa I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port. . . . . . . . . . . . . . . . 115
Five volt tolerant (FT and FTf) I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . 115
I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
DocID026900 Rev 4
9/168
10
List of figures
Figure 45.
Figure 46.
Figure 47.
Figure 48.
Figure 49.
Figure 50.
Figure 51.
Figure 52.
Figure 53.
Figure 54.
Figure 55.
Figure 56.
Figure 57.
Figure 58.
Figure 59.
Figure 60.
Figure 61.
Figure 62.
Figure 63.
Figure 64.
Figure 65.
Figure 66.
Figure 67.
Figure 68.
Figure 69.
10/168
STM32F302xD STM32F302xE
I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
USB timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . 126
ADC typical current consumption on VDDA pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
ADC typical current consumption on VREF+ pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
OPAMP voltage noise versus frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
LQFP144 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Recommended footprint for the LQFP144 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
UFBGA100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Recommended footprint for the UFBGA100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
UFBGA100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
LQFP100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Recommended footprint for the LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
WLCSP100 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Recommended footprint for the WLCSP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
WLCSP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
LQFP64 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Recommended footprint for the LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
LQFP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
LQFP100 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
DocID026900 Rev 4
STM32F302xD STM32F302xE
1
Introduction
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32F302xD/E microcontrollers.
This STM32F302xD/E datasheet should be read in conjunction with the reference manual of
STM32F302xB/C/D/E, STM32F302x6/8 devices (RM0365) available on STMicroelectronics
website at www.st.com.
For information on the ARM&reg; Cortex&reg;-M4 core with FPU, refer to the following documents:
•
Cortex&reg; -M4 with FPU Technical Reference Manual, available from the www.arm.com
website
•
STM32F3 and STM32F4 Series Cortex&reg; -M4 programming manual (PM0214)
available on STMicroelectronics website at www.st.com.
DocID026900 Rev 4
11/168
63
Description
2
STM32F302xD STM32F302xE
Description
The STM32F302xD/E family is based on the high-performance ARM&reg; Cortex&reg;-M4 32-bit
RISC core with FPU operating at a frequency of 72 MHz, and embedding a floating point
unit (FPU), a memory protection unit (MPU) and an embedded trace macrocell (ETM). The
family incorporates high-speed embedded memories (512-Kbyte Flash memory, 64-Kbyte
SRAM), a flexible memory controller (FSMC) for static memories (SRAM, PSRAM, NOR
and NAND), and an extensive range of enhanced I/Os and peripherals connected to an
AHB and two APB buses.
The devices offer two fast 12-bit ADCs (5 Msps), four comparators, two operational
amplifiers, one DAC channel, a low-power RTC, up to two general-purpose 16-bit timers,
one general-purpose 32-bit timer, and one timer dedicated to motor control. They also
feature standard and advanced communication interfaces: up to three I2Cs, up to four SPIs
(two SPIs are with multiplexed full-duplex I2Ss), three USARTs, up to two UARTs, CAN and
USB. To achieve audio class accuracy, the I2S peripherals can be clocked via an external
PLL.
The STM32F302xD/E family operates in the -40 to +85&deg;C and -40 to +105&deg;C temperature
ranges from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving mode allows
the design of low-power applications.
The STM32F302xD/E family offers devices in different packages ranging from 64 to
144 pins.
Depending on the device chosen, different sets of peripherals are included.
12/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Description
Table 2. STM32F302xD/E family device features and peripheral counts
Peripheral
Flash (Kbytes)
STM32F302Rx
STM32F302Vx
STM32F302Zx
384
384
384
512
SRAM (Kbytes) on data bus
NO
YES
Advanced control
1 (16-bit)
General purpose
5 (16-bit)
1 (32-bit)
Basic
PWM channels (all)
1 (16-bit)
(1)
26
PWM channels
(except
complementary)
20
SPI (I2S)(2)
I
4(2)
2C
3
Communication USART
interfaces
UART
3
2
CAN
1
USB
1
Normal I/Os
(TC, TTa)
26
37 in WLCSP100,44 in
LQFP100 and
UFBGA100
45
5-volt tolerant
I/Os (FT, FTf)
25
42 in LQFP100
40 in WLCSP100 and
UFBGA100
70
GPIOs
DMA channels
Capacitive sensing channels
12-bit ADCs
12
18
2
16 channels
24
2
17 channels
12-bit DAC channels
1
Analog comparator
4
Operational amplifiers
72 MHz
Operating voltage
Operating temperature
2
18 channels
2
CPU frequency
Packages
512
64
FMC (flexible memory controller)
Timers
512
2.0 to 3.6 V
Ambient operating temperature: - 40 to 85 &deg;C / - 40 to 105 &deg;C
Junction temperature: - 40 to 125 &deg;C
LQFP64
LQFP100
,WLCSP100
UFBGA100
LQFP144
1. This total number considers also the PWMs generated on the complementary output channels.
2. The SPI interfaces works in an exclusive way in either the SPI mode or the I2S audio mode.
DocID026900 Rev 4
13/168
63
Description
STM32F302xD STM32F302xE
Figure 1. STM32F302xD/E block diagram
6:-7$*
(70
7UDFH
7ULJ
9''
2%/
)ODVK
LQWHUIDFH
73,8
038)38
,EXV
&amp;RUWH[0&amp;38
'EXV
)PD[0+]
6\VWHP
%XV0DWUL[
75$'(&amp;/.
75$&amp;('&gt;@
DV$)
-7567
-7',
-7&amp;.6:&amp;/.
-7066:',2
-7'2
$V$)
)0&amp;65$0365$0
3&amp;&amp;DUG&amp;RPSDFW
)ODVK
1251$1')ODVK
.%)/$6+
ELWV
325
5HVHW
,QW
.%65$0
19,&amp;
#9''$
5&amp;/6
3//
*3'0$
FKDQQHOV
3$&gt;@
*3,23257$
3%&gt;@
*3,23257%
3&amp;&gt;@
*3,23257&amp;
3'&gt;@
*3,23257'
3(&gt;@
*3,23257(
3)&gt;@
*3,23257)
3*&gt;@
*3,23257*
3+&gt;@
*3,23257+
;;*URXSVRI
FKDQQHOVDV
$)
6WDQGE\
LQWHUIDFH
;7$/N+]
%DFNXS
57&amp;
5HJ
$:8 %\WH
%DFNXS
LQWHUIDFH
86$57&amp;/.
,&amp;&amp;/.
$'&amp;6$5
&amp;/.
&amp;5&amp;
7RXFK6HQVLQJ
&amp;RQWUROOHU
$+%
$3%
&amp;KDQQHOV(75DV$)
7,0(5
&amp;KDQQHOV(75DV$)
63,,6
026,6'0,62H[WB6'
6&amp;.&amp;.166:60&amp;/.DV$)
$+%
$3%
63,,6
026,6'0,62H[WB6'
6&amp;.&amp;.166:60&amp;/.DV$)
86$57
5;7;&amp;76576DV$)
86$57
5;7;&amp;76576DV$)
8$57
5;7;DV$)
8$57
5;7;DV$)
&amp;KDQQHO&amp;RPS
&amp;KDQQHO%5.DV$)
7,0(5
&amp;KDQQHOV
&amp;RPSFKDQQHOV
(75%5.DV$)
7,0(53:0
026,0,62
6&amp;.166DV$)
63,
026,0,62
6&amp;.166DV$)
63,
5;7;&amp;76576
6PDUW&amp;DUGDV$)
86$57
,&amp;
6&amp;/6'$60%$DV$)
,&amp;
6&amp;/6'$60%$DV$)
&amp;$17;&amp;$15;
86%)6
86%B'386%B'0
,) ELW'$&amp;
'$&amp;B&amp;+DV$)
7,0(5
#9''$
#9''$
6&lt;6&amp;)*&amp;7/
#9''$
*3&amp;RPSDUDWRU
*3&amp;RPSDUDWRU
*3&amp;RPSDUDWRU
*3&amp;RPSDUDWRU
;[,QV287VDV$)
1. AF: alternate function on I/O pins.
14/168
6&amp;/6'$60%$DV$)
E[&amp;$1 %65$0
DocID026900 Rev 4
,17(5)$&amp;(
7,0(5
86%65$0%
$3%IPD[ 0+]
7,0(5
$17,7$03
7,0(5
:LQ:$7&amp;+'2*
&amp;KDQQHO&amp;RPS
&amp;KDQQHO%5.DV$)
26&amp;B,1
26&amp;B287
&amp;KDQQHOV(75DV$)
(;7,7:.83
&amp;KDQQHOV&amp;RPS
&amp;KDQQHO%5.DV$)
9%$7 9WR9
7,0(5
ELW3:0
,&amp;
;;
$)
26&amp;B,1
26&amp;B287
#96:
$3%)PD[ 0+]
,)
15(6(7
9''$
966$
#9'',2
;7$/26&amp;
0+]
$+%3&amp;/.
$3%3&amp;/.
$3%3&amp;/.
+&amp;/.
)&amp;/.
$+%
ELW$'&amp;
5HVHW FORFN
FRQWURO
$+%
ELW$'&amp;
3253'5
9'',2 WR9
966
,QG:'*.
7HPSVHQVRU
95()
95()
#9''$
6XSSO\
6XSHUYLVLRQ
39'
5&amp;+60+]
*3'0$
FKDQQHOV
#9'',2
3RZHU
9ROWDJHUHJ
9WR9
&amp;/.1(&gt;@$&gt;@'^@
12(11:(11%/&gt;@
6'&amp;/.(&gt;@6'1(&gt;@
6'1:(1/15$61&amp;$6
1$'91:$,71,25'
15(*&amp;',171
2S$PS
,1[[
287[[
2S$PS
,1[[
287[[
06Y9
STM32F302xD STM32F302xE
Functional overview
3
Functional overview
3.1
ARM&reg; Cortex&reg;-M4 core with FPU with embedded Flash and
SRAM
The ARM&reg; Cortex&reg;-M4 processor with FPU is the latest generation of ARM processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The ARM&reg; Cortex&reg;-M4 32-bit RISC processor with FPU features exceptional codeefficiency, delivering the high-performance expected from an ARM core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allows efficient signal processing
and complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded ARM core, the STM32F302xD/E family is compatible with all ARM tools
and software.
Figure 1 shows the general block diagram of the STM32F302xD/E family devices.
3.2
Memory protection unit (MPU)
The memory protection unit (MPU) is used to separate the processing of tasks from the data
protection. The MPU manage up to 8 protection areas that are further divided up into 8
subareas. The protection area sizes are between 32 bytes and the whole 4 gigabytes of
addressable memory.
The memory protection unit is especially helpful for applications where some critical or
certified code has to be protected against the misbehavior of other tasks. It is usually
managed by an RTOS (real-time operating system). If a program accesses a memory
location that is prohibited by the MPU, the RTOS detects it and takes action. In an RTOS
environment, the kernel dynamically updates the MPU area setting, based on the process to
be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.3
Embedded Flash memory
All STM32F302xD/E devices feature 384/512 Kbyte of embedded Flash memory available
for storing programs and data. The Flash memory access time is adjusted to the CPU clock
frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states
above).
DocID026900 Rev 4
15/168
63
Functional overview
3.4
STM32F302xD STM32F302xE
Embedded SRAM
STM32F302xD/E devices feature 64 Kbyte of embedded SRAM with hardware parity check
implemented on the first 32 Kbyte. The memory can be accessed in read/write at CPU clock
speed with 0 wait states.
3.5
Boot modes
At startup, Boot0 pin and Boot1 option bit are used to select one of three boot options:
•
Boot from user Flash
•
Boot from system memory
•
Boot from embedded SRAM
The boot loader is located in the system memory. It is used to reprogram the Flash memory
by using USART1 (PA9/PA10), USART2 (PA2/PA3) or USB (PA11/PA12) through DFU
(device firmware upgrade).
3.6
Cyclic redundancy check (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at
linktime and stored at a given memory location.
16/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
3.7
Power management
3.7.1
Power supply schemes
Functional overview
•
VSS, VDD = 2.0 to 3.6 V: external power supply for I/Os and the internal regulator. It is
provided externally through VDD pins.
•
VSSA, VDDA = 2.0 to 3.6 V: external analog power supply for ADC, DAC, comparators,
operational amplifier, reset blocks, RCs and PLL. The minimum voltage to be applied to
VDDA differs from one analog peripheral to another. Table 3 provides the summary of
the VDDA ranges for analog peripherals. The VDDA voltage level must always be greater
than or equal to the VDD voltage level and must be provided first.
Table 3. External analog supply values for analog peripherals
Analog peripheral
•
3.7.2
Minimum VDDA supply
Maximum VDDA supply
ADC/COMP
2.0 V
3.6 V
DAC/OPAMP
2.4 V
3.6 V
VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Power supply supervisor
The device has an integrated power-on reset (POR) and power-down reset (PDR) circuits.
They are always active, and ensure proper operation above a threshold of 2 V. The device
remains in reset mode when the monitored supply voltage is below a specified threshold,
VPOR/PDR, without the need for an external reset circuit.
•
The POR monitors only the VDD supply voltage. During the startup phase it is required
that VDDA should arrive first and be greater than or equal to VDD.
•
The PDR monitors both the VDD and VDDA supply voltages, however the VDDA power
supply supervisor can be disabled (by programming a dedicated Option bit) to reduce
the power consumption if the application design ensures that VDDA is higher than or
equal to VDD.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD power supply and compares it to the VPVD threshold. An interrupt can be generated
when VDD drops below the VPVD threshold and/or when VDD is higher than the VPVD
threshold. The interrupt service routine can then generate a warning message and/or put
the MCU into a safe state. The PVD is enabled by software.
3.7.3
Voltage regulator
The regulator has three operation modes: main (MR), low power (LPR), and power-down.
•
The MR mode is used in the nominal regulation mode (Run)
•
The LPR mode is used in Stop mode.
•
The power-down mode is used in Standby mode: the regulator output is in high
impedance, and the kernel circuitry is powered down thus inducing zero consumption.
The voltage regulator is always enabled after reset. It is disabled in Standby mode.
DocID026900 Rev 4
17/168
63
Functional overview
3.7.4
STM32F302xD STM32F302xE
Low-power modes
The STM32F302xD/E supports three low-power modes to achieve the best compromise
between low power consumption, short startup time and available wakeup sources:
•
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and wake
up the CPU when an interrupt/event occurs.
•
Stop mode
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the USB wakeup, the RTC
alarm, COMPx, I2Cx or U(S)ARTx.
•
Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin or an RTC alarm occurs.
Note:
The RTC, the IWDG and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
3.8
Interconnect matrix
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Table 4. STM32F302xD/E peripheral interconnect matrix
Interconnect source
Interconnect action
TIMx
Timers synchronization or chaining
ADCx
DAC1
Conversion triggers
DMA
Memory to memory transfer trigger
Compx
Comparator output blanking
COMPx
TIMx
Timer input: OCREF_CLR input, input capture
ADCx
TIMx
Timer triggered by analog watchdog
TIMx
18/168
Interconnect
destination
DocID026900 Rev 4
STM32F302xD STM32F302xE
Functional overview
Table 4. STM32F302xD/E peripheral interconnect matrix (continued)
Interconnect source
Interconnect
destination
Interconnect action
GPIO
RTCCLK
HSE/32
MC0
TIM16
Clock source used as input channel for HSI and
LSI calibration
CSS
CPU (hard fault)
COMPx
GPIO
TIM1
TIM15, 16, 17
Timer break
TIMx
External trigger, timer break
GPIO
ADCx
DAC1
Conversion external trigger
DAC1
COMPx
Comparator inverting input
Note:
For more details about the interconnect actions, refer to the corresponding sections in the
STM32F302xD/E reference manual (RM0365).
3.9
Clocks and startup
System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-32 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example with
failure of an indirectly used external oscillator).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the high
speed APB domains is 72 MHz, while the maximum allowed frequency of the low speed
APB domain is 36 MHz.
DocID026900 Rev 4
19/168
63
Functional overview
STM32F302xD STM32F302xE
Figure 2. STM32F302xD/E clock tree
)/,7)&amp;/.
WR)ODVKSURJUDPPLQJLQWHUIDFH
+6,
WR,&amp;[ [ 6&lt;6&amp;/.
,665&amp;
6&lt;6&amp;/.
WR,6[ [ ([WFORFN
,6B&amp;.,1
86%
SUHVFDOHU
+6,
0+]
+6,5&amp;
86%&amp;/.WR86%LQWHUIDFH
WR)0&amp;
+&amp;/.
3//65&amp;
3//
[[
&laquo;[
6:
3//08/
WR$+%EXVFRUHPHPRU\DQG
'0$
+6,
$+%
$+ %
SUHVFDOHU
3//&amp;/.
+6(
35(',9
WR&amp;RUWH[V\VWHPWLPHU
)+&amp;/.&amp;RUWH[IUHHUXQQLQJFORFN
$3%
SUHVFDOHU
3&amp;/.
,I $3%SUHVFDOHU
[HOVH[
&amp;66
WR$3%SHULSKHUDOV
WR7,0
3/&amp;/.
26&amp;B287
26&amp;B,1
26&amp;B,1
26&amp;B287
6&lt;6&amp;/.
+6,
/6(
0+]
+6(26&amp;
WR7,0
/6(26&amp;
N+]
WR8 6 $57[ [ $3%
SUHVFDOHU
57&amp;&amp;/.
WR57&amp;
3&amp;/.
WR$3%SHULSKHUDOV
,I $3%SUHVFDOHU
[HOVH[
/6(
57&amp;6(/&gt;@
3&amp;/.
/6,
/6,5&amp;
N+]
0&amp;2SUHVFDOHU
0&amp;2
0&amp;2
,:'*&amp;/.
WR,:'*
3//&amp;/.
+6,
/6,
+6(
6&lt;6&amp;/.
6&lt;6&amp;/.
+6,
/6(
[
$'&amp;
SUHVFDOHU
WR86$57
7,0
WR$'&amp;[\
[\ $'&amp;SUHVFDOHU
069
20/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
3.10
Functional overview
General-purpose input/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current
capable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence to avoid spurious writing to the I/Os registers.
Fast I/O handling allows I/O toggling up to 36 MHz.
3.11
Direct memory access (DMA)
The flexible general-purpose DMA is able to manage memory-to-memory, peripheral-tomemory and memory-to-peripheral transfers. The DMA controller supports circular buffer
management, avoiding the generation of interrupts when the controller reaches the end of
the buffer.
Each of the 12 DMA channels is connected to dedicated hardware DMA requests, with
software trigger support for each channel. Configuration is done by software and transfer
sizes between source and destination are independent.
The DMA is used with the main peripherals: SPI, I2C, USART, general-purpose timers, DAC
and ADC.
3.12
Flexible static memory controller (FSMC)
The flexible static memory controller (FSMC) includes two memory controllers:
•
The NOR/PSRAM memory controller,
•
The NAND/PC Card memory controller.
This memory controller is also named Flexible memory controller (FMC).
The main features of the FMC controller are the following:
•
Interface with static-memory mapped devices including:
–
Static random access memory (SRAM),
–
NOR Flash memory/OneNAND Flash memory,
–
PSRAM (four memory banks),
–
NAND Flash memory with ECC hardware to check up to 8 Kbyte of data,
–
16-bit PC Card compatible devices.
•
8-,16-bit data bus width,
•
Independent Chip Select control for each memory bank,
•
Independent configuration for each memory bank,
•
Write FIFO,
•
LCD parallel interface.
The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost
DocID026900 Rev 4
21/168
63
Functional overview
STM32F302xD STM32F302xE
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
3.13
Interrupts and events
3.13.1
Nested vectored interrupt controller (NVIC)
The STM32F302xD/E devices embed a nested vectored interrupt controller (NVIC) able to
handle up to 73 maskable interrupt channels and 16 priority levels.
The NVIC benefits are the following:
•
Closely coupled NVIC gives low latency interrupt processing
•
Interrupt entry vector table address passed directly to the core
•
Closely coupled NVIC core interface
•
Allows early processing of interrupts
•
Processing of late arriving higher priority interrupts
•
Support for tail chaining
•
Processor state automatically saved
•
Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
3.14
Fast analog-to-digital converter (ADC)
Two fast analog-to-digital converters 5 MSPS, with selectable resolution between 12 and 6
bit, are embedded in the STM32F302xD/E family devices. The ADCs have up to 18 external
channels. The ADCs can perform conversions in single-shot or scan modes. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
The ADCs have also internal channels: Temperature sensor connected to ADC1 channel
16, VBAT/2 connected to ADC1 channel 17, Voltage reference VREFINT connected to the 2
ADCs channel 18, VREFOPAMP1 connected to ADC1 channel 15, VREFOPAMP2
connected to ADC2 channel 17.
Additional logic functions embedded in the ADC interface allow:
•
Simultaneous sample and hold
•
Interleaved sample and hold
•
Single-shunt phase current reading techniques.
The ADC can be served by the DMA controller.
Three analog watchdogs are available per ADC.
The analog watchdog feature allows very precise monitoring of the converted voltage of
one, some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers and the advanced-control timer (TIM1)
can be internally connected to the ADC start trigger and injection trigger, respectively, to
allow the application to synchronize A/D conversion and timers.
22/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
3.14.1
Functional overview
Temperature sensor
The temperature sensor (TS) generates a voltage VSENSE that varies linearly with
temperature.
The temperature sensor is internally connected to the ADC1_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.
3.14.2
Internal voltage reference (VREFINT)
The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC and Comparators. VREFINT is internally connected to the ADCx_IN18, x=1...4 input
channel. The precise voltage of VREFINT is individually measured for each part by ST during
production test and stored in the system memory area. It is accessible in read-only mode.
3.14.3
VBAT battery voltage monitoring
This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC1_IN17. As the VBAT voltage may be higher than VDDA,
and thus outside the ADC input range, the VBAT pin is internally connected to a bridge
divider by 2. As a consequence, the converted digital value is half the VBAT voltage.
3.14.4
OPAMP reference voltage (VREFOPAMP)
Every OPAMP reference voltage can be measured using a corresponding ADC internal
channel: VREFO, VREFOPAMP1 connected to ADC1 channel 15, VREFOPAMP2
connected to ADC2 channel 17.
3.15
Digital-to-analog converter (DAC)
One 12-bit buffered DAC channel can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.
This digital interface supports the following features:
•
One DAC output channel
•
8-bit or 10-bit monotonic output
•
Left or right data alignment in 12-bit mode
•
Synchronized update capability
•
Noise-wave generation
•
Triangular-wave generation
•
DMA capability (for each channel)
DocID026900 Rev 4
23/168
63
Functional overview
3.16
STM32F302xD STM32F302xE
•
External triggers for conversion
•
Input voltage reference VREF+
Operational amplifier (OPAMP)
The STM32F302xD/E embed two operational amplifiers (OPAMP1 and OPAMP2) with
external or internal follower routing and PGA capability (or even amplifier and filter capability
with external components). When an operational amplifier is selected, an external ADC
channel is used to enable output measurement.
The operational amplifier features:
3.17
•
8.2 MHz bandwidth
•
0.5 mA output capability
•
Rail-to-rail input/output
•
In PGA mode, the gain is programmed to be 2, 4, 8 or 16.
Ultra-fast comparators (COMP)
The STM32F302xD/E devices embed four ultra-fast rail-to-rail comparators (COMP1, 2, 4,
6) with programmable reference voltage (internal or external) and selectable output polarity.
The reference voltage can be one of the following:
•
External I/O
•
DAC output pin
•
Internal reference voltage or submultiple (1/4, 1/2, 3/4). Refer to Table 23: Embedded
internal reference voltage for the value and precision of the internal reference voltage.
All comparators can wake up from STOP mode, generate interrupts and breaks for the
timers.
3.18
Timers and watchdogs
The STM32F302xD/E include one advanced control timer, up to six general-purpose timers,
one basic timer, two watchdog timers and one SysTick timer. The table below compares the
features of the advanced control, general purpose and basic timers.
Table 5. Timer feature comparison
Timer type
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
outputs
Advanced
TIM1
16-bit
Up, Down,
Up/Down
Any integer
between 1
and 65536
Yes
4
Yes
Generalpurpose
TIM2
32-bit
Up, Down,
Up/Down
Any integer
between 1
and 65536
Yes
4
No
24/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Functional overview
Table 5. Timer feature comparison (continued)
Timer type
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
outputs
Generalpurpose
TIM3, TIM4
16-bit
Up, Down,
Up/Down
Any integer
between 1
and 65536
Yes
4
No
Generalpurpose
TIM15
16-bit
Up
Any integer
between 1
and 65536
Yes
2
1
Generalpurpose
TIM16, TIM17
16-bit
Up
Any integer
between 1
and 65536
Yes
1
1
Basic
TIM6
16-bit
Up
Any integer
between 1
and 65536
Yes
0
No
Note:
TIM1/2/3/4/15/16/17 can have PLL as clock source, and therefore can be clocked at
144 MHz.
3.18.1
Advanced timers (TIM1)
The advanced-control timer (TIM1) can be seen as a three-phase PWM multiplexed on six
channels. It has complementary PWM outputs with programmable inserted dead-times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
•
Input capture
•
Output compare
•
PWM generation (edge or center-aligned modes) with full modulation capability (0100%)
•
One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIM timer (described in
Section 3.18.2) using the same architecture, so the advanced-control timers can work
together with the TIM timers via the Timer Link feature for synchronization or event chaining.
3.18.2
General-purpose timers (TIM2, TIM3, TIM4, TIM15, TIM16, TIM17)
There are up to six synchronizable general-purpose timers embedded in the
STM32F302xD/E (see Table 5 for differences). Each general-purpose timer can be used to
generate PWM outputs, or act as a simple time base.
DocID026900 Rev 4
25/168
63
Functional overview
•
STM32F302xD STM32F302xE
TIM2, 3, and TIM4
These are full-featured general-purpose timers:
–
TIM2 has a 32-bit auto-reload up/downcounter and 32-bit prescaler
–
TIM3 and 4 have 16-bit auto-reload up/downcounters and 16-bit prescalers.
These timers all feature 4 independent channels for input capture/output compare,
PWM or one-pulse mode output. They can work together, or with the other generalpurpose timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
•
TIM15, 16 and 17
These three timers general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
–
TIM15 has 2 channels and 1 complementary channel
–
TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.
3.18.3
Basic timers (TIM6)
This timer is mainly used for DAC trigger generation. It can also be used as a generic 16-bit
time base.
3.18.4
Independent watchdog (IWDG)
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free running timer for application timeout
management. It is hardware or software configurable through the option bytes. The counter
can be frozen in debug mode.
3.18.5
Window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free running. It is
used as a watchdog to reset the device when a problem occurs. It is clocked from the main
clock. It has an early warning interrupt capability and the counter can be frozen in debug
mode.
26/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
3.18.6
Functional overview
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
3.19
•
A 24-bit down counter
•
Autoreload capability
•
Maskable system interrupt generation when the counter reaches 0.
•
Programmable clock source
Real-time clock (RTC) and backup registers
The RTC and the 16 backup registers are supplied through a switch that takes power from
either the VDD supply when present or the VBAT pin. The backup registers are sixteen 32-bit
registers used to store 64 bytes of user application data when VDD power is not present.
They are not reset by a system or power reset, or when the device wakes up from Standby
mode.
The RTC is an independent BCD timer/counter. It supports the following features:
•
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
•
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
•
Automatic correction for 28, 29 (leap year), 30 and 31 days of the month.
•
Two programmable alarms with wake up from Stop and Standby mode capability.
•
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
•
Digital calibration circuit with 1 ppm resolution, to compensate for quartz crystal
inaccuracy.
•
Three anti-tamper detection pins with programmable filter. The MCU can be woken up
from Stop and Standby modes on tamper event detection.
•
Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event. The MCU can be
woken up from Stop and Standby modes on timestamp event detection.
•
17-bit Auto-reload counter for periodic interrupt with wakeup from STOP/STANDBY
capability.
The RTC clock sources can be:
3.20
•
A 32.768 kHz external crystal
•
A resonator or oscillator
•
The internal low-power RC oscillator (typical frequency of 40 kHz)
•
The high-speed external clock divided by 32.
Inter-integrated circuit interface (I2C)
Up to three I2C bus interfaces can operate in multimaster and slave modes. They can
support standard (up to 100 kHz), fast (up to 400 kHz) and fast mode + (up to 1 MHz)
modes.
DocID026900 Rev 4
27/168
63
Functional overview
STM32F302xD STM32F302xE
All I2C bus interfaces support 7-bit and 10-bit addressing modes, multiple 7-bit slave
addresses (2 addresses, 1 with configurable mask). They also include programmable
analog and digital noise filters.
Table 6. Comparison of I2C analog and digital filters
-
Analog filter
Digital filter
Pulse width of
suppressed spikes
≥ 50 ns
Programmable length from 1 to 15
I2C peripheral clocks
Benefits
Available in Stop mode
1. Extra filtering capability vs.
standard requirements.
2. Stable length
Drawbacks
Variations depending on
temperature, voltage, process
Wakeup from Stop on address
match is not available when digital
filter is enabled.
In addition, they provide hardware support for SMBUS 2.0 and PMBUS 1.1: ARP capability,
Host notify protocol, hardware CRC (PEC) generation/verification, timeouts verifications and
ALERT protocol management. They also have a clock domain independent from the CPU
clock, allowing the I2Cx (x=1,2,3) to wake up the MCU from Stop mode on address match.
The I2C interfaces can be served by the DMA controller.
Refer to Table 7 for the features available in I2C1, I2C2 and I2C3.
Table 7. STM32F302xD/E I2C implementation
I2C features(1)
I2C1
I2C2
I2C3
7-bit addressing mode
X
X
X
10-bit addressing mode
X
X
X
Standard mode (up to 100 kbit/s)
X
X
X
Fast mode (up to 400 kbit/s)
X
X
X
Fast Mode Plus with 20mA output drive I/Os (up to 1 Mbit/s)
X
X
X
Independent clock
X
X
X
SMBus
X
X
X
Wakeup from STOP
X
X
X
1. X = supported.
3.21
Universal synchronous/asynchronous receiver transmitter
(USART)
The STM32F302xD/E devices have three embedded universal synchronous/asynchronous
receiver transmitters (USART1, USART2 and USART3).
The USART interfaces are able to communicate at speeds of up to 9 Mbit/s.
They provide hardware management of the CTS and RTS signals, they support IrDA SIR
ENDEC, the multiprocessor communication mode, the single-wire half-duplex
28/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Functional overview
communication mode and have LIN Master/Slave capability. The USART interfaces can be
served by the DMA controller.
3.22
Universal asynchronous receiver transmitter (UART)
The STM32F302xD/E devices have 2 embedded universal asynchronous receiver
transmitters (UART4, and UART5). The UART interfaces support IrDA SIR ENDEC,
multiprocessor communication mode and single-wire half-duplex communication mode. The
UART4 interface can be served by the DMA controller.
Refer to Table 8 for the features available in all U(S)ART interfaces.
Table 8. USART features
USART
modes/features(1)
USART1
USART2
USART3
UART4
UART5
Hardware flow control for modem
X
X
X
-
-
Continuous communication using DMA
X
X
X
X
-
Multiprocessor communication
X
X
X
X
X
Synchronous mode
X
X
X
-
-
Smartcard mode
X
X
X
-
-
Single-wire half-duplex communication
X
X
X
X
X
IrDA SIR ENDEC block
X
X
X
X
X
LIN mode
X
X
X
X
X
Dual clock domain and wakeup from Stop mode
X
X
X
X
X
Receiver timeout interrupt
X
X
X
X
X
Modbus communication
X
X
X
X
X
Auto baud rate detection
X
X
X
-
-
Driver Enable
X
X
X
-
-
1. X = supported.
3.23
Serial peripheral interface (SPI)/Inter-integrated sound
interfaces (I2S)
Up to four SPIs are able to communicate up to 18 Mbit/s in slave and master modes in fullduplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame size is configurable from 4 bits to 16 bits.
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) supporting four different audio
standards can operate as master or slave at half-duplex and full duplex communication
modes. They can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by 8-bit programmable linear prescaler. When operating in master mode
it can output a clock for an external audio component at 256 times the sampling frequency.
Refer to Table 9 for the features available in SPI1, SPI2, SPI3 and SPI4.
DocID026900 Rev 4
29/168
63
Functional overview
STM32F302xD STM32F302xE
Table 9. STM32F302xD/E SPI/I2S implementation
SPI features(1)
SPI1
SPI2
SPI3
SPI4
Hardware CRC calculation
X
X
X
X
Rx/Tx FIFO
X
X
X
X
NSS pulse mode
X
X
X
X
I2S mode
-
X
X
-
TI mode
X
X
X
X
1. X = supported.
3.24
Controller area network (CAN)
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
3.25
Universal serial bus (USB)
The STM32F302xD/E embeds a full-speed USB device peripheral compliant with the USB
specification version 2.0. The USB interface implements a full-speed (12 Mbit/s) function
interface with added support for USB 2.0 Link Power Management. It has softwareconfigurable endpoint setting with packet memory up-to 1 Kbyte (256 bytes are used for
CAN peripheral if enabled) and suspend/resume support.
The dedicated 48 MHz clock is generated from the internal main PLL (the clock source must
use a HSE crystal oscillator).
3.26
Infrared transmitter
The STM32F302xD/E devices provide an infrared transmitter solution. The solution is based
on internal connections between TIM16 and TIM17 as shown in the figure below.
TIM17 is used to provide the carrier frequency and TIM16 provides the main signal to be
sent. The infrared output signal is available on PB9 or PA13.
To generate the infrared remote control signals, TIM16 channel 1 and TIM17 channel 1 must
be properly configured to generate correct waveforms. All standard IR pulse modulation
modes can be obtained by programming the two timers output compare channels.
30/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Functional overview
Figure 3. Infrared transmitter
7,0(5
2&amp;
IRUHQYHORS
7,0(5
3%3$
2&amp;
IRUFDUULHU
06Y9
3.27
Touch sensing controller (TSC)
The STM32F302xD/E devices provide a simple solution for adding capacitive sensing
functionality to any application. These devices offer up to 24 capacitive sensing channels
distributed over 8 analog I/O groups.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic, etc.). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. To limit the CPU bandwidth usage this acquisition is directly managed by the
hardware touch sensing controller and only requires few external components to operate.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.
Table 10. Capacitive sensing GPIOs available on STM32F302xD/E devices
Group
1
2
Capacitive sensing
signal name
Pin
name
TSC_G1_IO1
PA0
TSC_G1_IO2
PA1
TSC_G1_IO3
PA2
TSC_G1_IO4
PA3
TSC_G2_IO1
PA4
TSC_G2_IO2
PA5
TSC_G2_IO3
PA6
TSC_G2_IO4
PA7
-
Group
5
-
DocID026900 Rev 4
6
Capacitive sensing
signal name
Pin
name
TSC_G5_IO1
PB3
TSC_G5_IO2
PB4
TSC_G5_IO3
PB6
TSC_G5_IO4
PB7
TSC_G6_IO1
PB11
TSC_G6_IO2
PB12
TSC_G6_IO3
PB13
TSC_G6_IO4
PB14
31/168
63
Functional overview
STM32F302xD STM32F302xE
Table 10. Capacitive sensing GPIOs available on STM32F302xD/E devices (continued)
Group
Capacitive sensing
signal name
Pin
name
-
TSC_G3_IO1
PC5
-
TSC_G3_IO2
PB0
-
TSC_G3_IO3
PB1
-
TSC_G3_IO4
PB2
TSC_G4_IO1
3
4
Capacitive sensing
signal name
Pin
name
TSC_G7_IO1
PE2
TSC_G7_IO2
PE3
TSC_G7_IO3
PE4
-
TSC_G7_IO4
PE5
PA9
-
TSC_G8_IO1
PD12
TSC_G4_IO2
PA10
-
TSC_G8_IO2
PD13
TSC_G4_IO3
PA13
-
TSC_G8_IO3
PD14
TSC_G4_IO4
PA14
-
TSC_G8_IO4
PD15
Group
7
8
Table 11. Number of capacitive sensing channels available on
STM32F302xD/E devices
Number of capacitive sensing channels
Analog I/O group
STM32F302VE/ZE
STM32F302RE
G1
3
3
G2
3
3
G3
3
3
G4
3
3
G5
3
3
G6
3
3
G7
3
0
G8
3
0
Number of capacitive sensing
channels
24
18
3.28
Development support
3.28.1
Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP Interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared respectively with SWDIO and SWCLK and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.
3.28.2
Embedded Trace Macrocell
The ARM embedded trace macrocell (ETM™) provides a greater visibility of the instruction
and data flow inside the CPU core by streaming compressed data at a very high rate from
the STM32F302xD/E through a small number of ETM™ pins to an external hardware trace
32/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Functional overview
port analyzer (TPA) device. The TPA is connected to a host computer using a high-speed
channel. Real-time instruction and data flow activity can be recorded and then formatted for
display on the host computer running debugger software. TPA hardware is commercially
available from common development tool vendors. It operates with third party debugger
software tools.
DocID026900 Rev 4
33/168
63
Pinout and pin description
4
STM32F302xD STM32F302xE
Pinout and pin description
3&amp;
3&amp;26&amp;B,1
3&amp;26&amp;B287
3)26&amp;B,1
3)26&amp;B287
1567
3&amp;
3&amp;
3&amp;
3&amp;
966$
9''$
3$
3$
966
9''
3$
3$
/4)3
9''
966
3$
3$
3$
3$
3$
3$
3&amp;
3&amp;
3&amp;
3&amp;
3%
3%
3%
3%
3$
3$
3$
3$
3&amp;
3&amp;
3%
3%
3%
3%
3%
966
9''
9%$7
3%
3%
%227
3%
3%
3%
3%
3%
3'
3&amp; 3&amp; 3&amp; 3$
3$
9''
966
Figure 4. STM32F302xD/E LQFP64 pinout
069
34/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
9''
966
3(
3(
3%
3%
%22 7
3%
3%
3%
3%
3%
3'
3'
3'
3'
3'
3'
3'
3'
3&amp; 3&amp; 3&amp; 3$
3$
Figure 5. STM32F302xD/E LQFP100 pinout
/4)3
9''
966
3)
3$ 3$ 3$ 3$ 3$ 3$ 3&amp;
3&amp;
3&amp;
3&amp;
3'
3'
3'
3'
3'
3'
3'
3'
3%
3%
3%
3%
3$
966
9''
3$
3$
3$
3$
3&amp;
3&amp;
3%
3%
3%
3(
3(
3(
3(
3(
3(
3(
3(
3(
3%
3%
966
9''
3(
3(
3(
3(
3(
9%$7
3&amp;
3&amp;26&amp;B,1
3&amp;26&amp;B287
3)
3)
3)26&amp;B,1
3)2&amp;6B287
1567
3&amp;
3&amp;
3&amp;
3&amp;
3)
966$95()
95()
9''$
3$
3$
3$
069
DocID026900 Rev 4
35/168
63
Pinout and pin description
STM32F302xD STM32F302xE
3'
3'
3'
3'
3'
3'
3&amp;
3&amp;
3&amp;
3$
3$
9''
966
3*
3*
3*
3*
3*
3*
3'
3'
9''
966
3(
3(
3%
3%
%227
3%
3%
3%
3%
3%
3*
9''
966
Figure 6. STM32F302xD/E LQFP144 pinout
3(
3(
3(
3(
3(
9%$7
3&amp;B$17,B7$03
3&amp;B26&amp;B,1
3&amp;B26&amp;B287
3+
3+
3)
3)
3)
3)
966
9''
3)
3)
3)
3)
3)
3)26&amp;B,1
3)26&amp;B287
1567
3&amp;
3&amp;
3&amp;
3&amp;
/4)3
9''
966
3+
3$
3$
3$
3$
3$
3$
3&amp;
3&amp;
3&amp;
3&amp;
9''
966
3*
3*
3*
3*
3*
3*
3*
3'
3'
9''
966
3'
3'
3'
3'
3'
3'
3%
3%
3%
3%
966
9''
3(
3(
3(
3(
3(
3(
3%
3%
966
9''
3)
3)
3)
3*
3*
3(
3(
3(
966
9''
3$
3$
3$
3$
3&amp;
3&amp;
3%
3%
3%
3)
3)
966
9''
3$
966$
95()
95()
9''$
3$B:.83
3$
3$
069
36/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
Figure 7. STM32F302xD/E WLCSP100 ballout
3(
9''
9''
$
966
966
3&amp;
3'
3%
3%
%
966
3$
3'
3'
3%
3%
3(
9''
3(
9''
&amp;
3)
3$
3'
3'
3%
3%
966
3(
3&amp;
3&amp;
26&amp;,1
'
3$
9''
3&amp;
3'
3%
3(
3(
9%$7
3&amp;
26&amp;287
3)
(
3$
3$
3$
3&amp;
3$
3(
3(
3)
1567
3)
)
3&amp;
3&amp;
3&amp;
3&amp;
3$
3&amp;
3$
3(
3)
26&amp;287
3)
26&amp;,1
*
3'
3'
3'
3'
3(
3&amp;
3$
3&amp;
3&amp;
3&amp;
+
3'
3'
3'
3%
3(
3$
3$
966$
3$
3&amp;
-
966
3%
3%
3%
9''
3%
3$
95()
3$
9''$
966
966
3%
3%
3%
3%
3$
9''
966
966
.
%227
06Y9
DocID026900 Rev 4
37/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Figure 8. STM32F302xD/E UFBGA100 ballout
$
3(
3(
3%
%227
3'
3'
3%
3%
3$
3$
3$
3$
%
3(
3(
3%
3%
3%
3'
3'
3'
3'
3&amp;
3&amp;
3$
&amp;
3&amp;
3(
3(
9''
3%
3'
3'
3&amp;
3)
3$
'
3&amp;
3(
966
3$
3$
3&amp;
3&amp;
9%$7
966
3&amp;
3&amp;
3&amp;
966
966
9''
9''
(
)
*
3)26&amp;,1
3)
3)26&amp;287 3)
+
3&amp;
1567
9''
3'
3'
3'
-
3)
3&amp;
3&amp;
3'
3'
3'
.
966$
95()
3&amp;
3$
3$
3&amp;
/
9''$
3$
3$
3$
3&amp;
3%
0
95()
3$
3$
3$
3%
3%
3'
3'
3%
3%
3%
3(
3(
3(
3%
3%
3%
3(
3(
3(
3(
3(
3(
069
38/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
Table 12. Legend/abbreviations used in the pinout table
Name
Abbreviation
Unless otherwise specified in brackets below the pin name, the pin function during and
after reset is the same as the actual pin name
Pin name
I/O structure
FT
5 V tolerant I/O
FTf
5 V tolerant I/O, I2C FM+ option
TTa
3.3 V tolerant I/O
TC
Standard 3.3V I/O
B
Dedicated to BOOT0 pin
RST
Bi-directional reset pin with embedded weak pull-up resistor
Unless otherwise specified by a note, all I/Os are set as floating inputs during and after
reset
Notes
Alternate
functions
Pin
functions
Definition
Functions selected through GPIOx_AFR registers
Additional
Functions directly selected/enabled through peripheral registers
functions
Table 13. STM32F302xD/E pin definitions
Notes
I/O structure
Pin type
LQFP144
LQFP100
Pin name
(function
after reset)
LQFP64
WLCSP100
Pin number
-
1
D6
1
PE2
I/O
FT
(1)
TRACECK, EVENTOUT,
TIM3_CH1, TSC_G7_IO1,
SPI4_SCK, FMC_A23
-
-
2
D7
2
PE3
I/O
FT
(1)
TRACED0, EVENTOUT,
TIM3_CH2, TSC_G7_IO2,
SPI4_NSS, FMC_A19
-
-
3
C8
3
PE4
I/O
FT
(1)
TRACED1, EVENTOUT,
TIM3_CH3, TSC_G7_IO3,
SPI4_NSS, FMC_A20
-
-
4
B9
4
PE5
I/O
FT
(1)
TRACED2, EVENTOUT,
TIM3_CH4, TSC_G7_IO4,
SPI4_MISO, FMC_A21
-
-
5
E7
5
PE6
I/O
FT
(1)
TRACED3, EVENTOUT,
SPI4_MOSI, FMC_A22
WKUP3, RTC_TAMP3
1
6
D8
6
VBAT
S
-
-
Alternate functions
DocID026900 Rev 4
-
Additional functions
-
39/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Table 13. STM32F302xD/E pin definitions (continued)
3
8
C10 8
4
9
D9
9
-
10
-
-
-
-
7
11
I/O
TC
-
EVENTOUT, TIM1_CH1N
WKUP2,RTC_TAMP1,
RTC_TS, RTC_OUT
PC14 I/O
OSC32_IN (2)
TC
-
EVENTOUT
OSC32_IN
PC15 OSC32_OUT I/O
TC
-
EVENTOUT
OSC32_OUT
PH0
FT
(1)
EVENTOUT, FMC_A0
-
FT
(1)
EVENTOUT, FMC_A1
-
EVENTOUT, FMC_A2
Pin name
(function
after reset)
PC13(2)
(2)
PH1
I/O
I/O
Notes
C9
I/O structure
7
Pin type
LQFP100
2
-
LQFP144
LQFP64
WLCSP100
Pin number
Alternate functions
Additional functions
E8
12
PF2
I/O
TTa
(1)
-
-
13
PF3
I/O
FT
(1)
EVENTOUT, FMC_A3
-
-
-
14
PF4
I/O
TTa
(1)
EVENTOUT, COMP1_OUT,
ADC1_IN5(3)
FMC_A4
-
-
-
15
PF5
I/O
FT
(1)
EVENTOUT, FMC_A5
-
(1)
-
-
-
(1)
-
-
-
19
-
-
-
-
-
-
73
-
-
16
VSS
S
ADC12_IN10
-
-
-
17
VDD
S
C1
18
PF6
I/O
FTf
(1)
EVENTOUT, TIM4_CH4,
I2C2_SCL, USART3_RTS,
FMC_NIORD
-
-
-
19
PF7
I/O
FT
(1)
EVENTOUT, FMC_NREG
-
-
-
-
20
PF8
I/O
FT
(1)
EVENTOUT, FMC_NIOWR
-
-
10
D10 21
PF9
I/O
FT
(1)
EVENTOUT, TIM15_CH1,
SPI2_SCK, FMC_CD
-
-
11
E10 22
PF10
I/O
FT
(1)
EVENTOUT, TIM15_CH2,
SPI2_SCK, FMC_INTR
-
5
12
F10 23
PF0-OSC_IN I
FTf
-
EVENTOUT, I2C2_SDA,
SPI2_NSS/I2S2_WS,
TIM1_CH3N
OSC_IN
6
13
F9
24
PF1OSC_OUT
O
FTf
-
EVENTOUT, I2C2_SCL,
SPI2_SCK/I2S2_CK
OSC_OUT
7
14
E9
25
NRST
I-O
RST -
8
15
G10 26
PC0
I/O
TTa
40/168
Device reset input/internal reset output (active low)
-
EVENTOUT, TIM1_CH1
DocID026900 Rev 4
ADC12_IN6
STM32F302xD STM32F302xE
Pinout and pin description
Table 13. STM32F302xD/E pin definitions (continued)
LQFP64
LQFP100
WLCSP100
LQFP144
Pin type
I/O structure
Notes
Pin number
9
16
G9
27
PC1
I/O
TTa
-
EVENTOUT, TIM1_CH2
ADC12_IN7
10
17
G8
28
PC2
I/O
TTa
-
EVENTOUT, TIM1_CH3
ADC12_IN8
11
18
H10 29
PC3
I/O
TTa
-
EVENTOUT, TIM1_CH4,
TIM1_BKIN2
ADC12_IN9
12
20
H8
VSSA
S
-
-
-
30
Pin name
(function
after reset)
-
-
-
S
-
-
-
-
-
TIM2_CH1/TIM2_ETR,
TSC_G1_IO1,
USART2_CTS,
COMP1_OUT, EVENTOUT
ADC1_IN1(3), COMP1_INM,
RTC_TAMP2, WKUP1
TTa
-
RTC_REFIN, TIM2_CH2,
TSC_G1_IO2,
USART2_RTS,
TIM15_CH1N, EVENTOUT
ADC1_IN2(3), COMP1_INP,
OPAMP1_VINP
TTa
(5)
TIM2_CH3, TSC_G1_IO3,
USART2_TX,
ADC1_IN3(3), COMP2_INM,
COMP2_OUT, TIM15_CH1, OPAMP1_VOUT
EVENTOUT
J10
33
VDDA
25
F7
34
35
36
PA0
PA1
PA2
I/O
I/O
I/O
TTa
-
S
-
-
-
S
-
(1)
-
26
G7
37
PA3
I/O
18
27
K9,
38
K10
VSS
19
28
K8
VDD
29
J7
39
40
PA4
TTa
TIM2_CH4, TSC_G1_IO4,
USART2_RX, TIM15_CH2,
EVENTOUT
17
20
-
-
22
16
-
S
13
J9
-
-
32
24
-
S
J8
15
(1)
VREF-
21
H9
-
31
-
23
Additional functions
(1)
VREF+(4)
14
Alternate functions
I/O
TTa
(5)
TIM3_CH2, TSC_G2_IO1,
SPI1_NSS,
SPI3_NSS/I2S3_WS,
USART2_CK, EVENTOUT
DocID026900 Rev 4
ADC1_IN4(3),
OPAMP1_VINM/
OPAMP1_VINP
(3), DAC1_OUT1,
ADC2_IN1
COMP1_INM,
COMP2_INM,
COMP4_INM,
COMP6_INM,
41/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Table 13. STM32F302xD/E pin definitions (continued)
30
H7
41
PA5
I/O
Notes
I/O structure
Pin name
(function
after reset)
Pin type
LQFP144
LQFP100
LQFP64
21
WLCSP100
Pin number
Alternate functions
Additional functions
TTa
(5)
TIM2_CH1/TIM2_ETR,
TSC_G2_IO2, SPI1_SCK,
EVENTOUT
ADC2_IN2(3), COMP1_INM,
COMP2_INM,
COMP4_INM,
COMP6_INM,
OPAMP1_VINP,
OPAMP2_VINM,
TIM16_CH1, TIM3_CH1,
TSC_G2_IO3, SPI1_MISO,
TIM1_BKIN, COMP1_OUT,
EVENTOUT
ADC2_IN3(3),
OPAMP2_VOUT
22
31
H6
42
PA6
I/O
TTa
(5)
23
32
K7
43
PA7
I/O
TTa
-
TIM17_CH1, TIM3_CH2,
TSC_G2_IO4, SPI1_MOSI,
TIM1_CH1N, EVENTOUT
ADC2_IN4(3), COMP2_INP,
OPAMP1_VINP,
OPAMP2_VINP
24
33
G6
44
PC4
I/O
TTa
-
EVENTOUT, TIM1_ETR,
USART1_TX
ADC2_IN5(3)
25
34
F6
45
PC5
I/O
TTa
-
ADC2_IN11,
EVENTOUT, TIM15_BKIN,
OPAMP1_VINM,
TSC_G3_IO1, USART1_RX
OPAMP2_VINM
26
35
J6
46
PB0
I/O
TTa
-
TIM3_CH3, TSC_G3_IO2,
TIM1_CH2N, EVENTOUT
27
36
K6
47
PB1
I/O
TTa
(5)
TIM3_CH4, TSC_G3_IO3,
TIM1_CH3N, COMP4_OUT,
EVENTOUT
28
37
K5
48
PB2
I/O
TTa
-
TSC_G3_IO4, EVENTOUT
FT
(1)
EVENTOUT
-
FT
(1)
EVENTOUT, FMC_A6
-
-
-
-
49
PF11
I/O
-
-
-
50
PF12
I/O
-
-
-
51
VSS
S
-
-
-
52
53
VDD
PF13
S
I/O
COMP4_INP,
OPAMP2_VINP,
ADC2_IN12, COMP4_INM
-
-
-
-
-
(1)
-
-
FT
(1)
EVENTOUT, FMC_A7
-
EVENTOUT, FMC_A8
-
-
-
-
54
PF14
I/O
FT
(1)
-
-
-
55
PF15
I/O
FT
(1)
EVENTOUT, FMC_A9
-
FT
(1)
EVENTOUT, FMC_A10
-
FT
(1)
EVENTOUT, FMC_A11
-
-
42/168
-
-
56
57
PG0
PG1
I/O
I/O
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
Table 13. STM32F302xD/E pin definitions (continued)
I/O structure
F8
58
PE7
I/O
TTa
(1)
EVENTOUT, TIM1_ETR,
FMC_D4
-
39
E6
59
PE8
I/O
TTa
(1)
EVENTOUT, TIM1_CH1N,
FMC_D5
-
40
-
60
PE9
I/O
TTa
(1)
EVENTOUT, TIM1_CH1,
FMC_D6
-
-
-
61
VSS
S
-
(1)
-
-
-
(1)
-
-
Pin name
(function
after reset)
Notes
Pin type
38
LQFP144
LQFP100
-
WLCSP100
LQFP64
Pin number
Alternate functions
Additional functions
COMP4_INM
-
-
-
-
62
VDD
S
-
41
-
63
PE10
I/O
TTa
(1)
EVENTOUT, TIM1_CH2N,
FMC_D7
-
-
42
H5
64
PE11
I/O
TTa
(1)
EVENTOUT, TIM1_CH2,
SPI4_NSS, FMC_D8
-
-
43
G5
65
PE12
I/O
TTa
(1)
EVENTOUT, TIM1_CH3N,
SPI4_SCK, FMC_D9
-
-
44
-
66
PE13
I/O
TTa
(1)
EVENTOUT, TIM1_CH3,
SPI4_MISO, FMC_D10
-
-
45
-
67
PE14
I/O
TTa
(1)
EVENTOUT, TIM1_CH4,
SPI4_MOSI, TIM1_BKIN2,
FMC_D11
-
-
46
-
68
PE15
I/O
TTa
(1)
EVENTOUT, TIM1_BKIN,
USART3_RX, FMC_D12
-
29
47
K4
69
PB10
I/O
TTa
-
TIM2_CH3, TSC_SYNC,
USART3_TX, EVENTOUT
-
30
48
K3
70
PB11
I/O
TTa
-
TIM2_CH4, TSC_G6_IO1,
USART3_RX, EVENTOUT
ADC12_IN14, COMP6_INP
31
49
K1,
J1,
K2
71
VSS
S
-
-
-
-
32
50
J5
72
VDD
S
-
-
-
-
33
51
J4
73
PB12
I/O
TTa
(5)
TSC_G6_IO2,
I2C2_SMBAL,
SPI2_NSS/I2S2_WS,
TIM1_BKIN, USART3_CK,
EVENTOUT
DocID026900 Rev 4
-
43/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Table 13. STM32F302xD/E pin definitions (continued)
53
J3
J2
74
75
PB13
PB14
I/O
I/O
I/O structure
Pin type
Pin name
(function
after reset)
TTa
TTa
Notes
35
52
LQFP144
LQFP100
LQFP64
34
WLCSP100
Pin number
Alternate functions
Additional functions
-
TSC_G6_IO3,
SPI2_SCK/I2S2_CK,
TIM1_CH1N,
USART3_CTS, EVENTOUT
-
-
TIM15_CH1, TSC_G6_IO4,
SPI2_MISO/I2S2ext_SD,
OPAMP2_VINP
TIM1_CH2N,
USART3_RTS, EVENTOUT
RTC_REFIN, TIM15_CH2,
TIM15_CH1N, TIM1_CH3N,
COMP6_INM
SPI2_MOSI/I2S2_SD,
EVENTOUT
36
54
H4
76
PB15
I/O
TTa
-
-
55
-
77
PD8
I/O
TTa
(1)
EVENTOUT, USART3_TX,
FMC_D13
-
-
56
G4
78
PD9
I/O
TTa
(1)
EVENTOUT, USART3_RX,
FMC_D14
-
-
57
H3
79
PD10
I/O
TTa
(1)
EVENTOUT, USART3_CK,
FMC_D15
-
58
H2
80
PD11
I/O
TTa
(1)
EVENTOUT,
USART3_CTS, FMC_A16
-
-
59
H1
81
PD12
I/O
TTa
(1)
EVENTOUT, TIM4_CH1,
TSC_G8_IO1,
USART3_RTS, FMC_A17
-
-
60
G3
82
PD13
I/O
TTa
(1)
EVENTOUT, TIM4_CH2,
TSC_G8_IO2, FMC_A18
-
-
-
-
83
VSS
S
-
(1)
-
-
-
-
-
84
VDD
S
-
(1)
-
-
-
61
G2
85
PD14
I/O
TTa
(1)
EVENTOUT, TIM4_CH3,
TSC_G8_IO3, FMC_D0
-
62
G1
86
PD15
I/O
TTa
(1)
EVENTOUT, TIM4_CH4,
TSC_G8_IO4, SPI2_NSS,
FMC_D1
-
-
-
-
87
PG2
I/O
FT
(1)
EVENTOUT, FMC_A12
-
FT
(1)
EVENTOUT, FMC_A13
-
FT
(1)
EVENTOUT, FMC_A14
-
-
44/168
-
-
88
89
PG3
PG4
I/O
I/O
DocID026900 Rev 4
COMP6_INM
OPAMP2_VINP
STM32F302xD STM32F302xE
Pinout and pin description
Table 13. STM32F302xD/E pin definitions (continued)
-
90
PG5
I/O
Notes
I/O structure
Pin name
(function
after reset)
Pin type
-
LQFP144
LQFP100
-
WLCSP100
LQFP64
Pin number
Alternate functions
Additional functions
FT
(1)
EVENTOUT, FMC_A15
-
EVENTOUT, FMC_INT2
-
-
-
-
91
PG6
I/O
FT
(1)
-
-
-
92
PG7
I/O
FT
(1)
EVENTOUT, FMC_INT3
-
FT
(1)
EVENTOUT
-
-
(1)
-
-
-
(1)
-
-
-
-
-
-
37
-
93
94
PG8
VSS
I/O
S
-
95
VDD
S
63
F4
96
PC6
I/O
FT
-
EVENTOUT, TIM3_CH1,
I2S2_MCK, COMP6_OUT
-
38
64
F2
97
PC7
I/O
FT
-
EVENTOUT, TIM3_CH2,
I2S3_MCK
-
39
65
F1
98
PC8
I/O
FT
-
EVENTOUT, TIM3_CH3
-
40
66
F3
99
PC9
I/O
FTf
-
EVENTOUT, TIM3_CH4,
I2C3_SDA, I2SCKIN
-
-
MCO, I2C3_SCL,
I2C2_SMBAL, I2S2_MCK,
TIM1_CH1, USART1_CK,
TIM4_ETR, EVENTOUT
-
-
I2C3_SMBAL,
TSC_G4_IO1, I2C2_SCL,
I2S3_MCK, TIM1_CH2,
USART1_TX, TIM15_BKIN,
TIM2_CH3, EVENTOUT
-
-
TIM17_BKIN,
TSC_G4_IO2, I2C2_SDA,
SPI2_MISO/I2S2ext_SD,
TIM1_CH3, USART1_RX,
COMP6_OUT, TIM2_CH4,
EVENTOUT
-
-
SPI2_MOSI/I2S2_SD,
TIM1_CH1N,
USART1_CTS,
COMP1_OUT, CAN_RX,
TIM4_CH1, TIM1_CH4,
TIM1_BKIN2, EVENTOUT
41
42
43
44
67
68
69
70
F5
E5
E1
E2
100 PA8
101 PA9
102 PA10
103 PA11
I/O
I/O
I/O
I/O
FTf
FTf
FTf
FT
DocID026900 Rev 4
USB_DM
45/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Table 13. STM32F302xD/E pin definitions (continued)
71
46
72
-
-
47
48
49
D1
104 PA12
I/O
FT
Notes
I/O structure
Pin name
(function
after reset)
Pin type
LQFP144
LQFP100
LQFP64
45
WLCSP100
Pin number
Alternate functions
Additional functions
-
TIM16_CH1, I2SCKIN,
TIM1_CH2N,
USART1_RTS,
COMP2_OUT, CAN_TX,
TIM4_CH2, TIM1_ETR,
EVENTOUT
SWDIO-JTMS,
TIM16_CH1N,
TSC_G4_IO3, IR-OUT,
USART3_CTS, TIM4_CH3,
EVENTOUT
-
EVENTOUT
-
USB_DP
E3
105 PA13
I/O
FT
-
-
106 PH2
I/O
FT
(1)
74
A1,
A2,
B1
107 VSS
S
-
-
-
-
75
D2
108 VDD
S
-
-
-
-
76
C2
109 PA14
I/O
FTf
-
SWCLK-JTCK,
TSC_G4_IO4, I2C1_SDA,
TIM1_BKIN, USART2_TX,
EVENTOUT
-
-
50
77
B2
110 PA15
I/O
FTf
-
JTDI,
TIM2_CH1/TIM2_ETR,
TSC_SYNC, I2C1_SCL,
SPI1_NSS,
SPI3_NSS/I2S3_WS,
USART2_RX, TIM1_BKIN,
EVENTOUT
51
78
E4
111 PC10
I/O
FT
-
EVENTOUT, UART4_TX,
SPI3_SCK/I2S3_CK,
USART3_TX
-
52
79
D3
112 PC11
I/O
FT
-
EVENTOUT, UART4_RX,
SPI3_MISO/I2S3ext_SD,
USART3_RX
-
53
80
A3
113 PC12
I/O
FT
-
EVENTOUT, UART5_TX,
SPI3_MOSI/I2S3_SD,
USART3_CK
-
-
81
B3
114 PD0
I/O
FT
(1)
EVENTOUT, CAN_RX,
FMC_D2
-
46/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
Table 13. STM32F302xD/E pin definitions (continued)
82
C3
115 PD1
I/O
FT
(1)
54
83
A4
116 PD2
I/O
FT
-
-
84
B4
117 PD3
I/O
FT
-
85
C4
118 PD4
I/O
-
86
-
119 PD5
I/O
-
-
-
120 VSS
S
Notes
WLCSP100
I/O structure
LQFP100
-
LQFP144
LQFP64
Pin name
(function
after reset)
Pin type
Pin number
Alternate functions
Additional functions
EVENTOUT, CAN_TX,
FMC_D3
-
EVENTOUT, TIM3_ETR,
UART5_RX
-
(1)
EVENTOUT,
TIM2_CH1/TIM2_ETR,
USART2_CTS, FMC_CLK
-
FT
(1)
EVENTOUT, TIM2_CH2,
USART2_RTS, FMC_NOE
-
FT
(1)
EVENTOUT, USART2_TX,
FMC_NWE
-
-
(1)
-
-
-
(1)
-
-
-
-
-
121 VDD
S
-
87
-
122 PD6
I/O
FT
(1)
EVENTOUT, TIM2_CH4,
USART2_RX, FMC_NWAIT
-
-
88
D4
123 PD7
I/O
FT
(1)
EVENTOUT, TIM2_CH3,
USART2_CK,
FMC_NE1/FMC_NCE2
-
-
-
-
124 PG9
I/O
FT
(1)
EVENTOUT,
FMC_NE2/FMC_NCE3
-
-
-
-
125 PG10
I/O
FT
(1)
EVENTOUT,
FMC_NCE4_1/FMC_NE3
-
-
-
-
126 PG11
I/O
FT
(1)
EVENTOUT, FMC_NCE4_2
-
EVENTOUT, FMC_NE4
-
-
-
-
127 PG12
I/O
FT
(1)
-
-
-
128 PG13
I/O
FT
(1)
EVENTOUT, FMC_A24
-
FT
(1)
EVENTOUT, FMC_A25
-
-
(1)
-
-
-
(1)
-
-
FT
(1)
-
-
-
129 PG14
130 VSS
I/O
S
-
-
-
131 VDD
S
-
-
-
132 PG15
I/O
EVENTOUT
DocID026900 Rev 4
-
47/168
63
Pinout and pin description
STM32F302xD STM32F302xE
Table 13. STM32F302xD/E pin definitions (continued)
55
56
89
90
A5
B5
133 PB3
134 PB4
I/O
I/O
FT
FT
Notes
Pin name
(function
after reset)
I/O structure
Pin type
LQFP144
WLCSP100
LQFP64
LQFP100
Pin number
Alternate functions
Additional functions
-
JTDO-TRACESWO,
TIM2_CH2, TIM4_ETR,
TSC_G5_IO1, SPI1_SCK,
SPI3_SCK/I2S3_CK,
USART2_TX, TIM3_ETR,
EVENTOUT
-
-
JTRST, TIM16_CH1,
TIM3_CH1, TSC_G5_IO2,
SPI1_MISO,
SPI3_MISO/I2S3ext_SD,
USART2_RX, TIM17_BKIN,
EVENTOUT
-
-
57
91
A6
135 PB5
I/O
FTf
-
TIM16_BKIN, TIM3_CH2,
I2C1_SMBAl, SPI1_MOSI,
SPI3_MOSI/I2S3_SD,
USART2_CK, I2C3_SDA,
TIM17_CH1, EVENTOUT
58
92
B6
136 PB6
I/O
FTf
-
TIM16_CH1N, TIM4_CH1,
TSC_G5_IO3, I2C1_SCL,
USART1_TX, EVENTOUT
-
FTf
-
TIM17_CH1N, TIM4_CH2,
TSC_G5_IO4, I2C1_SDA,
USART1_RX, TIM3_CH4,
FMC_NADV, EVENTOUT
-
-
-
59
93
C5
137 PB7
I/O
60
94
A7
138 BOOT0
I
61
95
D5
139 PB8
I/O
FTf
62
96
C6
140 PB9
I/O
FTf
-
97
B7
141 PE0
I/O
FT
48/168
-
-
-
TIM16_CH1, TIM4_CH3,
TSC_SYNC, I2C1_SCL,
USART3_RX,
COMP1_OUT, CAN_RX,
TIM1_BKIN, EVENTOUT
-
-
TIM17_CH1, TIM4_CH4,
I2C1_SDA, IR-OUT,
USART3_TX,
COMP2_OUT, CAN_TX,
EVENTOUT
-
EVENTOUT, TIM4_ETR,
TIM16_CH1, USART1_TX,
FMC_NBL0
-
(1)
DocID026900 Rev 4
STM32F302xD STM32F302xE
Pinout and pin description
Table 13. STM32F302xD/E pin definitions (continued)
A8
142 PE1
I/O
63
99
C7
143 VSS
64
A9,
A10
,
100
144 VDD
B10
,
B8
Notes
WLCSP100
98
I/O structure
LQFP100
-
LQFP144
LQFP64
Pin name
(function
after reset)
Pin type
Pin number
Alternate functions
EVENTOUT, TIM17_CH1,
USART1_RX, FMC_NBL1
Additional functions
FT
(1)
S
-
-
-
-
S
-
-
-
-
-
1. Function availability depends on the chosen device.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch sinks only a limited amount of current (3
mA), the use of GPIO PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED)
After the first backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the Backup registers which is not reset by the main reset. For details on how to manage these GPIOs, refer to
the Battery backup domain and BKP register description sections in the RM0316 reference manual.
3. Fast ADC channel.
4. The VREF+ functionality is not available on the 64-pin package. In this package, the VREF+ is internally connected to
VDDA.
5. These GPIOs offer a reduced touch sensing sensitivity. It is thus recommended to use them as sampling capacitor I/O.
DocID026900 Rev 4
49/168
63
AF0
Port
DocID026900 Rev 4
Port A
SYS_AF
AF1
AF2
AF3
AF4
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
AF10
AF11
AF12
AF13 AF14 AF15
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
-
TIM2_
CH1/TIM
2_ETR
-
TSC_G1
_IO1
-
-
-
USART2_
CTS
COMP1_
OUT
--
-
-
-
-
-
EVENT
OUT
PA1
RTC_
REFIN
TIM2_
CH2
-
TSC_G1
_IO2
-
-
-
USART2_
RTS
-
TIM15_
CH1N
-
-
-
-
-
EVENT
OUT
PA2
-
TIM2_
CH3
-
TSC_G1
_IO3
-
-
-
USART2_
TX
COMP2_
OUT
TIM15_
CH1
-
-
-
-
-
EVENT
OUT
PA3
-
TIM2_
CH4
-
TSC_G1
_IO4
-
-
-
USART2_
RX
-
TIM15_
CH2
-
-
-
-
-
EVENT
OUT
PA4
-
TIM3_
CH2
TSC_G2
_IO1
-
SPI1_NSS
SPI3_NSS
/I2S3_WS
USART2_
CK
-
-
-
-
-
-
-
EVENT
OUT
PA5
-
TIM2_
CH1/TIM
2_ETR
-
TSC_G2
_IO2
-
SPI1_SCK
-
-
-
-
-
-
-
-
-
EVENT
OUT
PA6
-
TIM16_
CH1
TIM3_
CH1
TSC_G2
_IO3
-
SPI1_
MISO
TIM1_
BKIN
-
COMP1_
OUT
-
-
-
-
-
-
EVENT
OUT
PA7
-
TIM17_
CH1
TIM3_
CH2
TSC_G2
_IO4
-
SPI1_
MOSI
TIM1_
CH1N
-
-
-
-
-
-
-
-
EVENT
OUT
PA8
MCO
-
-
I2C3_
SCL
I2C2_
SMBAL
I2S2_
MCK
TIM1_
CH1
USART1_
CK
-
-
TIM4_
ETR
-
-
-
-
EVENT
OUT
PA9
-
-
I2C3_
SMBAL
TSC_G4
_IO1
I2C2_SCL
I2S3_
MCK
TIM1_
CH2
USART1_
TX
-
TIM15_
BKIN
TIM2_
CH3
-
-
-
-
EVENT
OUT
STM32F302xD STM32F302xE
PA0
Pinout and pin description
50/168
Table 14. STM32F302xD/E alternate function mapping
AF0
Port
AF2
AF3
AF4
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
AF10
AF11
AF12
AF13 AF14 AF15
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
PA10
-
TIM17_
BKIN
-
TSC_G4
_IO2
I2C2_SDA
SPI2_MIS
O/I2S2ext
_SD
TIM1_
CH3
USART1_
RX
COMP6_
OUT
-
TIM2_
CH4
-
-
-
-
EVENT
OUT
PA11
-
-
-
-
-
SPI2_MO
SI/I2S2_
SD
TIM1_
CH1N
USART1_
CTS
COMP1_
OUT
CAN_RX
TIM4_
CH1
TIM1_
CH4
TIM1_
BKIN2
-
-
EVENT
OUT
PA12
-
TIM16_
CH1
-
-
-
I2SCKIN
TIM1_
CH2N
USART1_
RTS
COMP2_
OUT
CAN_TX
TIM4_
CH2
TIM1_
ETR
-
-
-
EVENT
OUT
PA13
SWDIOJTMS
TIM16_
CH1N
-
TSC_G4
_IO3
-
IR-OUT
-
USART3_
CTS
-
-
TIM4_
CH3
-
-
-
-
EVENT
OUT
PA14
SWCLKJTCK
-
-
TSC_G4
_IO4
I2C1_SDA
-
TIM1_
BKIN
USART2_
TX
-
-
-
-
-
-
-
EVENT
OUT
PA15
JTDI
TIM2_
CH1/TIM
2_ETR
-
TSC_
SYNC
SPI3_NSS
/I2S3_WS
USART2_
RX
-
TIM1_
BKIN
-
-
-
-
-
EVENT
OUT
PB0
-
-
TIM3_
CH3
TSC_G3
_IO2
-
-
TIM1_
CH2N
-
-
-
-
-
-
-
-
EVENT
OUT
PB1
-
-
TIM3_
CH4
TSC_G3
_IO3
-
-
TIM1_
CH3N
-
COMP4_
OUT
-
-
-
-
-
-
EVENT
OUT
PB2
-
-
-
TSC_G3
_IO4
-
-
-
-
-
-
-
-
-
-
-
EVENT
OUT
PB3
JTDOTRACES
WO
TIM2_
CH2
TIM4_
ETR
TSC_G5
_IO1
-
SPI1_SCK
SPI3_SCK
/I2S3_CK
USART2_
TX
-
-
TIM3_
ETR
-
-
-
-
EVENT
OUT
I2C1_SCL SPI1_NSS
51/168
Pinout and pin description
Port B
DocID026900 Rev 4
Port A
SYS_AF
AF1
STM32F302xD STM32F302xE
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
DocID026900 Rev 4
Port B
SYS_AF
AF1
AF2
AF3
AF4
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
JTRST
TIM16_
CH1
TIM3_
CH1
TSC_G5
_IO2
-
SPI1_
MISO
SPI3_MIS
O/I2S3ext
_SD
USART2_
RX
-
-
TIM17_
BKIN
-
-
-
-
EVENT
OUT
PB5
-
TIM16_
BKIN
TIM3_
CH2
-
I2C1_
SMBAl
SPI1_
MOSI
SPI3_MO
SI/I2S3_
SD
USART2_
CK
I2C3_SDA
-
TIM17_
CH1
-
-
-
-
EVENT
OUT
PB6
-
TIM16_
CH1N
TIM4_
CH1
TSC_G5
_IO3
I2C1_SCL
-
-
USART1_
TX
-
-
-
-
-
-
-
EVENT
OUT
PB7
-
TIM17_
CH1N
TIM4_
CH2
TSC_G5
_IO4
I2C1_SDA
-
-
USART1_
RX
-
-
TIM3_
CH4
-
FMC_
NADV
-
-
EVENT
OUT
PB8
-
TIM16_
CH1
TIM4_
CH3
TSC_
SYNC
I2C1_SCL
-
-
USART3_
RX
COMP1_
OUT
CAN_RX
-
-
TIM1_
BKIN
-
-
EVENT
OUT
PB9
-
TIM17_
CH1
TIM4_
CH4
-
I2C1_SDA
-
IR-OUT
USART3_
TX
COMP2_
OUT
CAN_TX
-
-
-
-
-
EVENT
OUT
PB10
-
TIM2_
CH3
-
TSC_
SYNC
-
-
-
USART3_
TX
-
-
-
-
-
-
-
EVENT
OUT
PB11
-
TIM2_
CH4
-
TSC_G6
_IO1
-
-
-
USART3_
RX
-
-
-
-
-
-
-
EVENT
OUT
PB12
-
-
-
TSC_G6
_IO2
I2C2_
SMBAL
SPI2_NSS
/I2S2_WS
TIM1_
BKIN
USART3_
CK
-
-
-
-
-
-
-
EVENT
OUT
PB13
-
-
-
TSC_G6
_IO3
-
SPI2_SCK
/I2S2_CK
TIM1_
CH1N
USART3_
CTS
-
-
-
-
-
-
-
EVENT
OUT
STM32F302xD STM32F302xE
PB4
Pinout and pin description
52/168
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
AF2
AF3
AF4
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
53/168
PB14
-
TIM15_
CH1
-
TSC_G6
_IO4
-
SPI2_MIS
O/I2S2ext
_SD
TIM1_
CH2N
USART3_
RTS
-
-
-
-
-
-
-
EVENT
OUT
PB15
RTC_
REFIN
TIM15_
CH2
TIM15_
CH1N
-
TIM1_
CH3N
SPI2_MO
SI/I2S2_S
D
-
-
-
-
-
-
-
-
-
EVENT
OUT
PC0
-
EVENT
OUT
TIM1_
CH1
-
-
-
-
-
-
-
-
-
-
-
-
-
PC1
-
EVENT
OUT
TIM1_
CH2
-
-
-
-
-
-
-
-
-
-
-
-
-
PC2
-
EVENT
OUT
TIM1_
CH3
-
-
-
-
-
-
-
-
-
-
-
-
-
PC3
-
EVENT
OUT
TIM1_
CH4
-
-
-
TIM1_
BKIN2
-
-
-
-
-
-
-
-
-
PC4
-
EVENT
OUT
TIM1_
ETR
-
-
-
-
USART1_
TX
-
-
-
-
-
-
-
-
PC5
-
EVENT
OUT
TIM15_
BKIN
TSC_G3
_IO1
-
-
-
USART1_
RX
-
-
-
-
-
-
-
-
PC6
-
EVENT
OUT
TIM3_
CH1
-
-
-
I2S2_
MCK
COMP6_O
UT
-
-
-
-
-
-
-
-
PC7
-
EVENT
OUT
TIM3_
CH2
-
-
-
I2S3_
MCK
-
-
-
-
-
-
-
-
-
PC8
-
EVENT
OUT
TIM3_
CH3
-
-
-
-
-
-
-
-
-
-
-
-
-
PC9
-
EVENT
OUT
TIM3_
CH4
I2C3_
SDA
-
I2SCKIN
-
-
-
-
-
-
-
-
-
-
Pinout and pin description
Port C
DocID026900 Rev 4
Port B
SYS_AF
AF1
STM32F302xD STM32F302xE
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
PC10
-
EVENT
OUT
-
-
-
UART4_
TX
SPI3_SCK
/I2S3_CK
USART3_
TX
-
-
-
-
-
-
-
-
PC11
-
EVENT
OUT
-
-
-
UART4_
RX
SPI3_MIS
O/I2S3ext
_SD
USART3_
RX
-
-
-
-
-
-
-
-
PC12
-
EVENT
OUT
-
-
-
UART5_
TX
SPI3_MO
SI/I2S3_
SD
USART3_
CK
-
-
-
-
-
-
-
-
PC13
-
EVENT
OUT
-
-
TIM1_
CH1N
-
-
-
-
-
-
-
-
-
-
-
PC14
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PC15
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PD0
-
EVENT
OUT
-
-
-
-
-
CAN_RX
-
-
-
-
FMC_D2
-
-
-
PD1
-
EVENT
OUT
-
-
-
-
CAN_TX
-
-
-
-
FMC_D3
-
-
-
PD2
-
EVENT
OUT
TIM3_
ETR
-
-
UART5_
RX
-
-
-
-
-
-
-
-
-
-
PD3
-
EVENT
OUT
TIM2_CH
1/TIM2_
ETR
-
-
-
-
USART2_
CTS
-
-
-
-
FMC_
CLK
-
-
-
PD4
-
EVENT
OUT
TIM2_
CH2
-
-
-
-
USART2_
RTS
-
-
-
-
FMC_
NOE
-
-
-
STM32F302xD STM32F302xE
Port D
DocID026900 Rev 4
Port C
SYS_AF
AF1
Pinout and pin description
54/168
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
DocID026900 Rev 4
Port D
SYS_AF
AF1
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
AF10
AF11
AF12
AF13 AF14 AF15
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
-
EVENT
OUT
-
-
-
-
-
USART2_
TX
-
-
-
-
FMC_
NWE
-
-
-
PD6
-
EVENT
OUT
TIM2_
CH4
-
-
-
-
USART2_
RX
-
-
-
-
FMC_
NWAIT
-
-
-
PD7
-
EVENT
OUT
TIM2_
CH3
-
-
-
-
USART2_
CK
-
-
-
-
FMC_NE
1/FMC_
NCE2
-
-
-
PD8
-
EVENT
OUT
-
-
-
-
-
USART3_
TX
-
-
-
-
FMC_
D13
-
-
-
PD9
-
EVENT
OUT
-
-
-
-
-
USART3_
RX
-
-
-
-
FMC_
D14
-
-
-
PD10
-
EVENT
OUT
-
-
-
-
-
USART3_
CK
-
-
-
-
FMC_
D15
-
-
-
PD11
-
EVENT
OUT
-
-
-
-
-
USART3_
CTS
-
-
-
-
FMC_
A16
-
-
-
PD12
-
EVENT
OUT
TIM4_
CH1
TSC_G8
_IO1
-
-
-
USART3_
RTS
-
-
-
-
FMC_
A17
-
-
-
PD13
-
EVENT
OUT
TIM4_
CH2
TSC_G8
_IO2
-
-
-
-
-
-
-
-
FMC_
A18
-
-
-
PD14
-
EVENT
OUT
TIM4_
CH3
TSC_G8
_IO3
-
-
-
-
-
-
-
-
FMC_D0
-
-
-
PD15
-
EVENT
OUT
TIM4_
CH4
TSC_G8
_IO4
-
-
SPI2_NSS
-
-
-
-
-
FMC_D1
-
-
-
55/168
Pinout and pin description
PD5
STM32F302xD STM32F302xE
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
DocID026900 Rev 4
Port E
SYS_AF
AF1
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
AF10
AF11
AF12
AF13 AF14 AF15
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
-
EVENT
OUT
TIM4_
ETR
-
TIM16_
CH1
-
-
USART1_
TX
-
-
-
-
FMC_
NBL0
-
-
-
PE1
-
EVENT
OUT
-
-
TIM17_
CH1
-
-
USART1_
RX
-
-
-
-
FMC_
NBL1
-
-
-
PE2
TRACECK
EVENT
OUT
TIM3_
CH1
TSC_G7
_IO1
-
SPI4_SCK
-
-
-
-
-
-
FMC_
A23
-
-
-
PE3
TRACED0
EVENT
OUT
TIM3_
CH2
TSC_G7
_IO2
-
SPI4_NSS
-
-
-
-
-
-
FMC_
A19
-
-
-
PE4
TRACED1
EVENT
OUT
TIM3_
CH3
TSC_G7
_IO3
-
SPI4_NSS
-
-
-
-
-
-
FMC_
A20
-
-
-
PE5
TRACED2
EVENT
OUT
TIM3_
CH4
TSC_G7
_IO4
-
SPI4_
MISO
-
-
-
-
-
-
FMC_
A21
-
-
-
PE6
TRACED3
EVENT
OUT
-
-
-
SPI4_
MOSI
-
-
-
-
-
-
FMC_
A22
-
-
-
PE7
-
EVENT
OUT
TIM1_
ETR
-
-
-
-
-
-
-
-
-
FMC_D4
-
-
-
PE8
-
EVENT
OUT
TIM1_
CH1N
-
-
-
-
-
-
-
-
-
FMC_D5
-
-
-
PE9
-
EVENT
OUT
TIM1_
CH1
-
-
-
-
-
-
-
-
-
FMC_D6
-
-
-
PE10
-
EVENT
OUT
TIM1_
CH2N
-
-
-
-
-
-
-
-
-
FMC_D7
-
-
-
PE11
-
EVENT
OUT
TIM1_
CH2
-
-
SPI4_NSS
-
-
-
-
-
-
FMC_D8
-
-
-
STM32F302xD STM32F302xE
PE0
Pinout and pin description
56/168
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
Port E
SYS_AF
DocID026900 Rev 4
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
57/168
PE12
-
EVENT
OUT
TIM1_
CH3N
-
-
SPI4_SCK
-
-
-
-
-
-
FMC_D9
-
-
-
PE13
-
EVENT
OUT
TIM1_
CH3
-
-
SPI4_
MISO
-
-
-
-
-
-
FMC_
D10
-
-
-
PE14
-
EVENT
OUT
TIM1_
CH4
-
-
SPI4_
MOSI
TIM1_
BKIN2
-
-
-
-
-
FMC_
D11
-
-
-
PE15
-
EVENT
OUT
TIM1_
BKIN
-
-
-
-
USART3_
RX
-
-
-
-
FMC_
D12
-
-
-
PF0
-
EVENT
OUT
-
-
I2C2_SDA
SPI2_NSS
/I2S2_WS
TIM1_
CH3N
-
-
-
-
-
-
-
-
-
PF1
-
EVENT
OUT
-
-
I2C2_SCL
SPI2_SCK
/I2S2_CK
-
-
-
-
-
-
-
-
-
-
PF2
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A2
-
-
-
PF3
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A3
-
-
-
PF4
-
EVENT
OUT
COMP1_
OUT
-
-
-
-
-
-
-
-
-
FMC_A4
-
-
-
PF5
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A5
-
-
-
PF6
-
EVENT
OUT
TIM4_
CH4
-
I2C2_SCL
-
-
USART3_
RTS
-
-
-
-
FMC_
NIORD
-
-
-
PF7
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
NREG
-
-
-
Pinout and pin description
Port F
AF1
STM32F302xD STM32F302xE
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
PF8
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
NIOWR
-
-
-
PF9
-
EVENT
OUT
-
TIM15_
CH1
-
SPI2_SCK
-
-
-
-
-
-
FMC_CD
-
-
-
PF10
-
EVENT
OUT
-
TIM15_
CH2
-
SPI2_SCK
-
-
-
-
-
-
FMC_
INTR
-
-
-
PF11
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PF12
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A6
-
-
-
PF13
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A7
-
-
-
PF14
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A8
-
-
-
PF15
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A9
-
-
-
PG0
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A10
-
-
-
PG1
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A11
-
-
-
PG2
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A12
-
-
-
PG3
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A13
-
-
-
PG4
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A14
-
-
-
STM32F302xD STM32F302xE
Port G
DocID026900 Rev 4
Port F
SYS_AF
AF1
Pinout and pin description
58/168
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
DocID026900 Rev 4
Port G
SYS_AF
AF1
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A15
-
-
-
PG6
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
INT2
-
-
-
PG7
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
INT3
-
-
-
PG8
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PG9
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_NE
2/FMC_
NCE3
-
-
-
PG10
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
NCE4_1/
FMC_
NE3
-
-
-
PG11
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
NCE4_2
-
-
-
PG12
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
NE4
-
-
-
PG13
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A24
-
-
-
PG14
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_
A25
-
-
-
PG15
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
59/168
Pinout and pin description
PG5
STM32F302xD STM32F302xE
Table 14. STM32F302xD/E alternate function mapping (continued)
AF0
Port
Port H
SYS_AF
AF1
AF2
I2C3/TIM1
TIM2/15/
/2/3/4/8/20
16/17/E
/15/GPCO
VENT
MP1
AF3
AF4
I2C3//15/
TSC
I2C1/2/TI
M1/8/16/
17
AF5
AF6
AF7
AF8
AF9
SPI1/SPI2
SPI2/I2S2/
/I2S2/SPI3
USART1/2 I2C3/GPC
SPI3/I2S3/
CAN/TIM1
/I2S3/SPI4
/3/CAN/GP OMP1/2/3/
TIM1/8/20/
/8/15
/UART4/5/
COMP6
4/5/6
Infrared
Infrared
AF10
AF11
AF12
AF13 AF14 AF15
TIM2/3/
4/8/17
TIM1/8
FSMC
/TIM1
-
-
EVENT
DocID026900 Rev 4
PH0
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A0
-
-
-
PH1
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
FMC_A1
-
-
-
PH2
-
EVENT
OUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Pinout and pin description
60/168
Table 14. STM32F302xD/E alternate function mapping (continued)
STM32F302xD STM32F302xE
STM32F302xD STM32F302xE
5
Memory mapping
Memory mapping
Figure 9. STM32F302xD/E memory map
[))
[))))))))
&amp;RUWH[0
ZLWK)38
,QWHUQDO
3HULSKHUDOV
[(
$+%
[
5HVHUYHG
[
$+%
[
5HVHUYHG
[&amp;
[))
$+%
[
5HVHUYHG
[$
[&amp;
)0&amp;FRQWURO
UHJLVWHUV
[$
[
$3%
[
5HVHUYHG
)0&amp;
EDQNDQG
EDQN
[$
)0&amp;
EDQNDQG
EDQN
[)))))))
[
$3%
[
2SWLRQE\WHV
[))))
6\VWHPPHPRU\
[)))'
[
3HULSKHUDOV
[
5HVHUYHG
5HVHUYHG
[
[
[
65$0
&amp;2'(
5HVHUYHG
)ODVKPHPRU\
[
[
5HVHUYHG
5HVHUYHG
[
[
)ODVKV\VWHP
PHPRU\RU65$0
GHSHQGLQJRQ%227
FRQILJXUDWLRQ
06Y9
DocID026900 Rev 4
61/168
63
Memory mapping
STM32F302xD STM32F302xE
Table 15. Memory map, peripheral register boundary addresses
Bus
Size
(bytes)
Peripheral
0xA000 0000 - 0xA000 0FFF
4K
0x8000 0000 - 0x9FFF FFFF
512 M
FSMC Banks 3 and 4
0x6000 0000 - 0x7FFF FFFF
512 M
FSMC Banks 1 and 2
-
0x5000 0400 - 0x5FFF FFFF
~384 M
Reserved
AHB3
0x5000 0000 - 0x5000 03FF
1K
-
0x4800 2000 - 0x4FFF FFFF
~132 M
0x4800 1C00 - 0x4800 1FFF
1K
GPIOH
0x4800 1800 - 0x4800 1BFF
1K
GPIOG
0x4800 1400 - 0x4800 17FF
1K
GPIOF
0x4800 1000 - 0x4800 13FF
1K
GPIOE
0x4800 0C00 - 0x4800 0FFF
1K
GPIOD
0x4800 0800 - 0x4800 0BFF
1K
GPIOC
0x4800 0400 - 0x4800 07FF
1K
GPIOB
0x4800 0000 - 0x4800 03FF
1K
GPIOA
0x4002 4400 - 0x47FF FFFF
~128 M
0x4002 4000 - 0x4002 43FF
1K
TSC
0x4002 3400 - 0x4002 3FFF
3K
Reserved
0x4002 3000 - 0x4002 33FF
1K
CRC
0x4002 2400 - 0x4002 2FFF
3K
Reserved
0x4002 2000 - 0x4002 23FF
1K
Flash interface
0x4002 1400 - 0x4002 1FFF
3K
Reserved
0x4002 1000 - 0x4002 13FF
1K
RCC
0x4002 0800 - 0x4002 0FFF
2K
Reserved
0x4002 0400 - 0x4002 07FF
1K
DMA2
0x4002 0000 - 0x4002 03FF
1K
DMA1
0x4001 8000 - 0x4001 FFFF
32 K
Reserved
0x4001 4C00 - 0x4001 7FFF
13 K
Reserved
0x4001 4800 - 0x4001 4BFF
1K
TIM17
0x4001 4400 - 0x4001 47FF
1K
TIM16
0x4001 4000 - 0x4001 43FF
1K
TIM15
0x4001 3C00 - 0x4001 3FFF
1K
SPI4
0x4001 3800 - 0x4001 3BFF
1K
USART1
0x4001 3400 - 0x4001 37FF
1K
Reserved
0x4001 3000 - 0x4001 33FF
1K
SPI1
AHB4
AHB2
-
AHB1
-
APB2
62/168
Boundary address
DocID026900 Rev 4
FSMC control registers
ADC1 - ADC2
Reserved
Reserved
STM32F302xD STM32F302xE
Memory mapping
Table 15. Memory map, peripheral register boundary addresses (continued)
Bus
APB2
-
APB1
Boundary address
Size
(bytes)
Peripheral
0x4001 2C00 - 0x4001 2FFF
1K
TIM1
0x4001 0800 - 0x4001 2BFF
9K
Reserved
0x4001 0400 - 0x4001 07FF
1K
EXTI
0x4001 0000 - 0x4001 03FF
1K
SYSCFG + COMP + OPAMP
0x4000 7C00 - 0x4000 FFFF
32 K
Reserved
0x4000 7800 - 0x4000 7BFF
1K
I2C3
0x4000 7400 - 0x4000 77FF
1K
DAC
0x4000 7000 - 0x4000 73FF
1K
PWR
0x4000 6800 - 0x4000 6FFF
2K
Reserved
0x4000 6400 - 0x4000 67FF
1K
bxCAN
0x4000 6000 - 0x4000 63FF
1K
USB/CAN SRAM
0x4000 5C00 - 0x4000 5FFF
1K
USB device FS
0x4000 5800 - 0x4000 5BFF
1K
I2C2
0x4000 5400 - 0x4000 57FF
1K
I2C1
0x4000 5000 - 0x4000 53FF
1K
UART5
0x4000 4C00 - 0x4000 4FFF
1K
UART4
0x4000 4800 - 0x4000 4BFF
1K
USART3
0x4000 4400 - 0x4000 47FF
1K
USART2
0x4000 4000 - 0x4000 43FF
1K
I2S3ext
0x4000 3C00 - 0x4000 3FFF
1K
SPI3/I2S3
0x4000 3800 - 0x4000 3BFF
1K
SPI2/I2S2
0x4000 3400 - 0x4000 37FF
1K
I2S2ext
0x4000 3000 - 0x4000 33FF
1K
IWDG
0x4000 2C00 - 0x4000 2FFF
1K
WWDG
0x4000 2800 - 0x4000 2BFF
1K
RTC
0x4000 1800 - 0x4000 27FF
4K
Reserved
0x4000 1000 - 0x4000 13FF
1K
TIM6
0x4000 0C00 - 0x4000 0FFF
1K
Reserved
0x4000 0800 - 0x4000 0BFF
1K
TIM4
0x4000 0400 - 0x4000 07FF
1K
TIM3
0x4000 0000 - 0x4000 03FF
1K
TIM2
DocID026900 Rev 4
63/168
63
Electrical characteristics
STM32F302xD STM32F302xE
6
Electrical characteristics
6.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1
Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 &deg;C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean&plusmn;3σ).
6.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 &deg;C, VDD = VDDA = 2.0 to 3.6 V.
They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean&plusmn;2σ).
6.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 10.
6.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 11.
Figure 10. Pin loading conditions
Figure 11. Pin input voltage
0&amp;8SLQ
0&amp;8SLQ
&amp; S)
9,1
069
64/168
DocID026900 Rev 4
069
STM32F302xD STM32F302xE
6.1.6
Electrical characteristics
Power supply scheme
Figure 12. Power supply scheme
9%$7
%DFNXSFLUFXLWU\
/6(57&amp;
:DNHXSORJLF
%DFNXSUHJLVWHUV
287
*3,2V
,1
/HYHOVKLIWHU
3RZHU
VZLWFK
&plusmn;9
9''
[9''
[Q)
[)
,2ORJLF
.HUQHOORJLF
&amp;38
GLJLWDO
PHPRULHV
5HJXODWRU
[966
9''$
9''$
95()
Q)
)
Q)
)
95()
$'&amp;'$&amp;
95()
$QDORJ5&amp;V
3//FRPSDUDWRUV23$03
966$
069
1. Dotted lines represent the internal connections on low pin count packages, joining the dedicated supply
pins.
Caution:
Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
DocID026900 Rev 4
65/168
146
Electrical characteristics
6.1.7
STM32F302xD STM32F302xE
Current consumption measurement
Figure 13. Current consumption measurement scheme
)$$
6$$
)$$!
6$$!
-36
6.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 16: Voltage characteristics,
Table 17: Current characteristics, and Table 18: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 16. Voltage characteristics(1)
Symbol
Ratings
Min
Max
VDD–VSS
External main supply voltage (including VDDA, VBAT
and VDD)
-0.3
4.0
Allowed voltage difference for VDD &gt; VDDA
-
0.4
Allowed voltage difference for VREF+ &gt; VDDA
-
0.4
Input voltage on FT and FTf pins
VSS −0.3
VDD + 4.0
Input voltage on TTa pins
VSS −0.3
4.0
Input voltage on any other pin
VSS − 0.3
4.0
Input voltage on Boot0 pin
0
9
Variations between different VDD power pins
-
50
Variations between all the different ground pins
-
50
VDD–VDDA
VREF+–VDDA(2)
VIN(3)
|ΔVDDx|
|VSSX − VSS|
VESD(HBM)
Electrostatic discharge voltage (human body
model)
Unit
V
V
mV
see Section 6.3.13: Electrical
sensitivity characteristics
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range. The following relationship must be respected between VDDA and VDD:
VDDA must power on before or at the same time as VDD in the power up sequence.
VDDA must be greater than or equal to VDD.
2. VREF+ must be always lower or equal than VDDA (VREF+ ≤VDDA). If unused then it must be connected to VDDA.
3. VIN maximum must always be respected. Refer to Table 17: Current characteristics for the maximum allowed injected
current values.
66/168
DocID026900 Rev 4
-
STM32F302xD STM32F302xE
Electrical characteristics
Table 17. Current characteristics
Symbol
Ratings
Max.
ΣIVDD
Total current into sum of all VDD_x power lines (source)
160
ΣIVSS
Total current out of sum of all VSS_x ground lines (sink)
-160
IVDD
Maximum current into each VDD_x power line (source)
(1)
100
IVSS
Maximum current out of each VSS _x ground line (sink)(1)
100
Output current sunk by any I/O and control pin
25
IIO(PIN)
ΣIIO(PIN)
Output current source by any I/O and control pin
Total output current sunk by sum of all IOs and control pins
Total output current sourced by sum of all IOs and control pins(2)
Injected current on FT, FTf, and B
IINJ(PIN)
Injected current on TC and RST
Injected current on TTa pins
ΣIINJ(PIN)
-25
(2)
pins(3)
80
Unit
mA
-80
-5/+0
pin(4)
&plusmn;5
(5)
&plusmn;5
Total injected current (sum of all I/O and control pins)(6)
&plusmn;25
1. All main power (VDD, VDDA) and ground (VSS and VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by VIN &gt; VDD while a negative injection is induced by VIN&lt; VSS. IINJ(PIN) must never be
exceeded. Refer to Table 16: Voltage characteristics for the maximum allowed input voltage values.
5. A positive injection is induced by VIN &gt; VDDA while a negative injection is induced by VIN&lt; VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 16: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note (2) below Table 81.
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).
Table 18. Thermal characteristics
Symbol
TSTG
TJ
Ratings
Storage temperature range
Maximum junction temperature
DocID026900 Rev 4
Value
Unit
-65 to +150
&deg;C
150
&deg;C
67/168
146
Electrical characteristics
STM32F302xD STM32F302xE
6.3
Operating conditions
6.3.1
General operating conditions
Table 19. General operating conditions
Symbol
Parameter
Conditions
Min
Max
fHCLK
Internal AHB clock frequency
-
0
72
fPCLK1
Internal APB1 clock frequency
-
0
36
fPCLK2
Internal APB2 clock frequency
-
0
72
Standard operating voltage
-
2
3.6
2
3.6
VDD
VDDA
VBAT
Analog operating voltage
(OPAMP and DAC not used)
Analog operating voltage
(OPAMP and DAC used)
Must have a potential
equal to or higher than
VDD
3.6
1.65
3.6
-0.3
VDD+0.3
-0.3
VDDA+0.3
-0.3
5.5
BOOT0
0
5.5
LQFP144
-
606
WLCSP100
-
454
LQFP100
-
476
UFBGA100
-
339
LQFP64
-
435
-40
85
-40
105
Maximum power
dissipation
-40
105
Low power dissipation(3)
-40
125
6 suffix version
-40
105
7 suffix version
-40
125
TC I/O
TTa I/O
VIN
PD
FT and FTf
I/O input voltage
Power dissipation at TA =
85 &deg;C for suffix 6 or TA =
105 &deg;C for suffix 7(2)
Ambient temperature for 6
suffix version
TA
Ambient temperature for 7
suffix version
TJ
I/O(1)
Junction temperature range
Maximum power
dissipation
Low power
dissipation(3)
MHz
V
V
2.4
Backup operating voltage
Unit
V
V
mW
&deg;C
&deg;C
&deg;C
1. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.7: Thermal
characteristics).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Section 7.7: Thermal characteristics).
68/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
6.3.2
Electrical characteristics
Operating conditions at power-up / power-down
The parameters given in Table 20 are derived from tests performed under the ambient
temperature condition summarized in Table 19.
Table 20. Operating conditions at power-up / power-down
Symbol
Parameter
VDD rise time rate
tVDD
-
VDD fall time rate
VDDA rise time rate
tVDDA
6.3.3
Conditions
-
VDDA fall time rate
Min
Max
0
∞
20
∞
0
∞
20
∞
Unit
&micro;s/V
Embedded reset and power control block characteristics
The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.
Table 21. Embedded reset and power control block characteristics
Symbol
VPOR/PDR(1)
VPDRhyst
(1)
Parameter
Conditions
Power on/power down
reset threshold
Min.
Typ. Max.
Falling edge
1.8(2)
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
-
40
-
mV
PDR hysteresis
-
Unit
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
Table 22. Programmable voltage detector characteristics
Symbol
Parameter
VPVD0
PVD threshold 0
VPVD1
PVD threshold 1
VPVD2
PVD threshold 2
VPVD3
PVD threshold 3
VPVD4
PVD threshold 4
VPVD5
PVD threshold 5
Min(1)
Typ
Max(1)
Rising edge
2.1
2.18
2.26
Falling edge
2
2.08
2.16
Rising edge
2.19
2.28
2.37
Falling edge
2.09
2.18
2.27
Rising edge
2.28
2.38
2.48
Falling edge
2.18
2.28
2.38
Rising edge
2.38
2.48
2.58
Falling edge
2.28
2.38
2.48
Rising edge
2.47
2.58
2.69
Falling edge
2.37
2.48
2.59
Rising edge
2.57
2.68
2.79
Falling edge
2.47
2.58
2.69
Conditions
DocID026900 Rev 4
Unit
V
69/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 22. Programmable voltage detector characteristics (continued)
Symbol
VPVD6
Min(1)
Typ
Max(1)
Rising edge
2.66
2.78
2.9
Falling edge
2.56
2.68
2.8
Rising edge
2.76
2.88
3
Falling edge
2.66
2.78
2.9
Parameter
Conditions
PVD threshold 6
Unit
V
VPVD7
PVD threshold 7
VPVDhyst(2)
PVD hysteresis
-
-
100
-
mV
IDD(PVD)
PVD current
consumption
-
-
0.15
0.26
&micro;A
1. Data based on characterization results only, not tested in production.
2. Guaranteed by design, not tested in production.
6.3.4
Embedded reference voltage
The parameters given in Table 23 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.
Table 23. Embedded internal reference voltage
Symbol
Parameter
VREFINT
Internal reference voltage
TS_vrefint
VRERINT
TCoeff
Conditions
Min
Typ
Max
Unit
–40 &deg;C &lt; TA &lt; +105 &deg;C
1.16
1.2
1.25
V
–40 &deg;C &lt; TA &lt; +85 &deg;C
1.16
1.2
1.24(1)
V
ADC sampling time when
reading the internal
reference voltage
-
2.2
-
-
&micro;s
Internal reference voltage
spread over the
temperature range
VDD = 3 V &plusmn;10 mV
-
-
10(2)
mV
-
-
-
100(2) ppm/&deg;C
Temperature coefficient
1. Data based on characterization results, not tested in production.
2. Guaranteed by design, not tested in production.
Table 24. Internal reference voltage calibration values
Calibration value name
VREFINT_CAL
6.3.5
Description
Raw data acquired at
temperature of 30 &deg;C
VDDA= 3.3 V
Memory address
0x1FFF F7BA - 0x1FFF F7BB
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
70/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Note:
The total current consumption is the sum of IDD and IDDA.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•
All I/O pins are in input mode with a static value at VDD or VSS (no load)
•
All peripherals are disabled except when explicitly mentioned
•
The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0
to 24 MHz,1 wait state from 24 to 48 MHz and 2 wait states from 48 to 72 MHz)
•
Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
•
When the peripherals are enabled fPCLK2 = fHCLK and fPCLK1 = fHCLK/2
•
When fHCLK &gt; 8 MHz, the PLL is ON and the PLL input is equal to HSI/2 (4 MHz) or
HSE (8 MHz) in bypass mode.
The parameters given in Table 25 to Table 29 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 19.
Table 25. Typical and maximum current consumption from VDD supply at VDD = 3.6V
All peripherals enabled
Symbol Parameter Conditions
IDD
Supply
current in
Run mode,
executing
from Flash
fHCLK
Max @ TA(1)
Typ
85 &deg;C
105 &deg;C
72 MHz 66.4
76.5
76.9
77.4
64 MHz 59.8
66.4
67.7
48 MHz 47.3
53.7
32 MHz 33.3
85 &deg;C
105 &deg;C
33.0
37.2
38.1
38.9
68.6
29.7
33.5
34.3
35.0
53.8
55.1
23.2
26.2
27.1
28.0
36.8
37.4
38.5
16.8
19.8
20.6
21.4
24 MHz 26.0
29.4
30.0
31.2
13.5
16.6
17.4
18.6
8 MHz
10.7
13.8
14.4
15.3
6.63
10.2
10.5
11.2
1 MHz
4.27
7.47
8.13
8.90
3.78
7.40
7.70
8.50
64 MHz 55.6
59.6
62.8
63.2
29.4
33.1
34.5
35.0
48 MHz 43.6
Internal
32 MHz 30.8
clock (HSI)
24 MHz 24.0
47.0
49.2
50.1
23.1
26.2
27.1
28.0
33.6
35.3
35.8
16.7
19.8
20.6
21.5
28.0
28.2
29.7
13.5
16.5
17.5
18.4
13.6
14.7
15.2
6.63
9.74
10.6
11.2
72 MHz 66.2 76.2
76.7
77.2(2)
32.8
36.9(2)
37.7
38.5(2)
64 MHz 59.6
66.2
67.6
68.4
29.3
33.1
33.9
34.4
External 48 MHz 47.0
clock (HSE
32 MHz 33.0
bypass)
53.4
53.6
54.9
22.4
25.6
26.2
27.2
36.6
37.2
38.1
16.0
19.0
19.5
20.4
24 MHz 25.6
29.0
29.5
30.6
12.8
15.7
16.3
17.6
8 MHz
13.4
13.8
14.7
6.40
9.48
9.93
10.90
8 MHz
10.5
(2)
IDD
Supply
current in
Run mode,
executing
from RAM
Max @ TA(1)
Typ
25 &deg;C
External
clock (HSE
bypass)
25 &deg;C
All peripherals disabled
10.3
DocID026900 Rev 4
Unit
mA
71/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 25. Typical and maximum current consumption from VDD supply at VDD = 3.6V (continued)
All peripherals enabled
Symbol Parameter Conditions
IDD
Supply
current in
Run mode,
executing
from RAM
fHCLK
Max @ TA(1)
Typ
85 &deg;C
105 &deg;C
3.92
7.06
7.54
8.60
64 MHz 55.4
59.2
62.5
48 MHz 43.1
Internal
32 MHz 30.5
clock (HSI)
24 MHz 23.8
46.7
Unit
25 &deg;C
85 &deg;C
105 &deg;C
3.42
6.53
7.05
8.10
62.9
29.1
32.7
34.0
34.6
49.0
49.9
22.8
26.1
26.8
27.8
33.2
35.0
35.5
15.8
18.8
19.5
20.9
27.8
27.9
29.2
12.6
15.6
16.3
17.5
13.1
14.1
14.6
6.20
9.37
10.3
10.7
72 MHz 48.8 53.5
53.6
54.0(2)
7.60
8.20(2)
8.50
9.00(2)
64 MHz 43.5
48.6
49.1
49.3
6.90
7.50
7.80
8.00
48 MHz 33.6
External
clock (HSE 32 MHz 24.3
bypass)
24 MHz 18.6
38.1
40.0
41.3
5.30
5.80
6.00
6.40
27.5
28.1
29.3
3.80
4.10
4.40
4.70
21.9
22.4
22.6
2.90
3.30
3.40
3.90
8 MHz
8.24 11.27
11.79
12.70
1.36
1.74
1.85
2.00
1 MHz
3.64
6.72
7.36
8.30
0.79
1.17
1.26
1.35
64 MHz 39.7
43.9
45.5
45.8
6.70
7.30
7.40
7.70
48 MHz 30.4
Internal
32 MHz 21.9
clock (HSI)
24 MHz 17.0
33.9
35.3
36.5
5.10
5.60
5.70
6.10
25.8
26.2
26.7
3.60
4.10
4.20
4.50
20.2
21.5
21.7
2.98
3.41
3.46
3.57
11.0
11.7
12.4
1.41
1.74
1.81
1.87
External
clock (HSE
bypass)
1 MHz
9.85
(2)
IDD
Max @ TA(1)
Typ
25 &deg;C
8 MHz
Supply
current in
Sleep
mode,
executing
from Flash
or RAM
All peripherals disabled
8 MHz
7.81
mA
1. Data based on characterization results, not tested in production unless otherwise specified.
2. Data based on characterization results and tested in production with code executing from RAM.
Table 26. Typical and maximum current consumption from the VDDA supply
VDDA = 2.4 V
Symbol Parameter
IDDA
72/168
Supply
current in
Run mode,
code
executing
from Flash
or RAM
Conditions
(1)
HSE
bypass
fHCLK
Typ
VDDA = 3.6 V
Max @ TA(2)
25 &deg;C
85 &deg;C 105 &deg;C
Typ
Max @ TA(2)
25 &deg;C
Unit
85 &deg;C 105 &deg;C
72 MHz
220
243
255
260
241
264
281
287
64 MHz
194
215
226
231
212
233
248
254
48 MHz
145
164
172
176
158
176
187
192
32 MHz
100
116
121
124
108
123
130
134
24 MHz
78
92
96
98
85
97
102
105
8 MHz
1.9
3.1
3.6
4.4
2.5
3.7
4.4
5.5
DocID026900 Rev 4
&micro;A
STM32F302xD STM32F302xE
Electrical characteristics
Table 26. Typical and maximum current consumption from the VDDA supply (continued)
VDDA = 2.4 V
Symbol Parameter
IDDA
Supply
current in
Run mode,
code
executing
from Flash
or RAM
Conditions
(1)
HSE
bypass
HSI clock
fHCLK
Typ
VDDA = 3.6 V
Max @ TA(2)
25 &deg;C
85 &deg;C 105 &deg;C
Typ
Max @ TA(2)
25 &deg;C
Unit
85 &deg;C 105 &deg;C
1 MHz
1.9
3.1
3.6
4.4
2.5
3.7
4.4
5.5
64 MHz
266
290
301
306
295
320
335
341
48 MHz
216
237
247
251
240
262
274
279
32 MHz
170
188
196
199
190
208
217
221
24 MHz
148
164
170
172
166
182
189
192
8 MHz
70
78
81
82
84
92
95
97
&micro;A
1. Current consumption from the VDDA supply is independent of whether the peripherals are on or off. Furthermore when the
PLL is off, IDDA is independent from the frequency.
2. Data based on characterization results, not tested in production.
Table 27. Typical and maximum VDD consumption in Stop and Standby modes
Symbol Parameter
IDD
Typ @VDD (VDD=VDDA)
Max
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
TA = TA = TA =
25 &deg;C 85 &deg;C 105 &deg;C
Conditions
Regulator in run mode,
18.4
Supply
all oscillators OFF
current in
Stop mode Regulator in low-power 6.80
mode, all oscillators OFF
Supply
current in
Standby
mode
18.7
18.8
18.9
19.0
19.1
47
435
940
6.94
7.11
7.18
7.26
7.39
33
408
898
0.72
0.87
0.99
1.10
1.23
1.37
-
-
-
LSI OFF and IWDG OFF 0.57
0.68
0.76
0.85
0.94
1.03
6.2
8.6
13.5
LSI ON and IWDG ON
Unit
&micro;A
DocID026900 Rev 4
73/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 28. Typical and maximum VDDA consumption in Stop and Standby modes
Supply
current in
Stop mode
IDDA
Supply
current in
Standby
mode
Supply
current in
Stop mode
Supply
current in
Standby
mode
Max(1)
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
TA = TA = TA =
25 &deg;C 85 &deg;C 105 &deg;C
1.72 1.85 1.97 2.10 2.25 2.41
10.7
11
12
-
-
-
3.6
4
6
Conditions
VDDA supervisor OFF VDDA supervisor ON
Symbol Parameter
Typ @VDD (VDD = VDDA)
Regulator in run/lowpower mode, all
oscillators OFF
LSI ON and IWDG ON 2.08 2.26 2.43 2.61 2.82 3.05
LSI OFF and IWDG
OFF
1.60 1.73 1.85 1.98 2.13 2.29
Unit
&micro;A
Regulator in run/lowpower mode, all
oscillators OFF
1.00 1.02 1.05 1.10 1.16 1.24
-
-
-
LSI ON and IWDG ON 1.36 1.43 1.51 1.61 1.74 1.88
-
-
-
LSI OFF and IWDG
OFF
-
-
-
0.88 0.90 0.93 0.98 1.05 1.12
1. Data based on characterization results, not tested in production.
Table 29. Typical and maximum current consumption from VBAT supply
Symbol
Para
meter
Max
@VBAT = 3.6 V(2)
Typ @VBAT
Conditions
(1)
LSE &amp; RTC
ON; “Xtal
mode” lower
driving
capability;
LSEDRV[1:
Backup 0] = '00'
domain
IDD_VBAT
supply LSE &amp; RTC
current ON; “Xtal
mode”
higher
driving
capability;
LSEDRV[1:
0] = '11'
1.65V
1.8V
2V
0.48
0.50
0.52
2.4V 2.7V
0.58
3V
0.65 0.72 0.80 0.90
1.1
1.5
2.0
&micro;A
0.83
0.86
0.90
0.98
1.03 1.10 1.20 1.30
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Data based on characterization results, not tested in production.
74/168
Unit
T = TA = TA =
3.3V 3.6V A
25&deg;C 85&deg;C 105&deg;C
DocID026900 Rev 4
1.5
2.2
2.9
STM32F302xD STM32F302xE
Electrical characteristics
Figure 14. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] 00’)
6
6
6
6
6
6
)
6&quot;!4 !
6
6
#
#
#
#
4! #
-36
Typical current consumption
The MCU is placed under the following conditions:
•
VDD = VDDA = 3.3 V
•
All I/O pins available on each package are in analog input configuration
•
The Flash access time is adjusted to fHCLK frequency (0 wait states from 0 to 24 MHz,
1 wait state from 24 to 48 MHz and 2 wait states from 48 MHz to 72 MHz), and Flash
prefetch is ON
•
When the peripherals are enabled, fAPB1 = fAHB/2, fAPB2 = fAHB
•
PLL is used for frequencies greater than 8 MHz
•
AHB prescaler of 2, 4, 8,16 and 64 is used for the frequencies 4 MHz, 2 MHz, 1 MHz,
500 kHz and 125 kHz respectively.
DocID026900 Rev 4
75/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 30. Typical current consumption in Run mode, code with data processing running
from Flash
Typ
Symbol
IDD
Parameter
Conditions
Supply current in
Run mode from
VDD supply
Running from HSE
crystal clock 8 MHz,
code executing from
Flash
IDDA(1) (2)
Supply current in
Run mode from
VDDA supply
fHCLK
Peripherals
enabled
Peripherals
disabled
72 MHz
60.7
27.3
64 MHz
54.3
24.1
48 MHz
42.1
19.4
32 MHz
28.7
13.9
24 MHz
22.2
11.0
16 MHz
15.4
7.9
8 MHz
8.3
4.51
4 MHz
5.14
3.02
2 MHz
3.37
2.21
1 MHz
2.49
1.80
500 kHz
2.04
1.57
125 kHz
1.71
0.84
72 MHz
239.7
64 MHz
210.5
48 MHz
155.6
32 MHz
105.5
24 MHz
81.9
16 MHz
58.6
8 MHz
1.16
4 MHz
1.16
2 MHz
1.16
1 MHz
1.16
500 kHz
1.16
125 kHz
1.16
Unit
mA
&micro;A
1. VDDA supervisor is OFF.
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp is not included. Refer to the tables of characteristics in the subsequent sections.
76/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 31. Typical current consumption in Sleep mode, code running from Flash or RAM
Typ
Symbol
IDD
Parameter
Conditions
Supply current in
Sleep mode from
VDD supply
Running from HSE
crystal clock 8 MHz,
code executing from
Flash or RAM
IDDA(1) (2)
Supply current in
Sleep mode from
VDDA supply
fHCLK
Peripherals
enabled
Peripherals
disabled
72 MHz
43.0
7.4
64 MHz
38.3
6.8
48 MHz
29.0
5.29
32 MHz
19.7
3.91
24 MHz
15.2
3.19
16 MHz
10.8
2.46
8 MHz
5.85
1.55
4 MHz
3.80
1.45
2 MHz
2.67
1.32
1 MHz
2.12
1.22
500 kHz
1.83
1.19
125 kHz
1.60
0.83
72 MHz
239.7
64 MHz
210.5
48 MHz
155.6
32 MHz
105.5
24 MHz
81.9
16 MHz
58.6
8 MHz
1.16
4 MHz
1.16
2 MHz
1.16
1 MHz
1.16
500 kHz
1.16
125 kHz
1.16
Unit
mA
&micro;A
1. VDDA supervisor is OFF.
2. When peripherals are enabled, the power consumption of the analog part of peripherals such as ADC, DAC, Comparators,
OpAmp is not included. Refer to the tables of characteristics in the subsequent sections.
DocID026900 Rev 4
77/168
146
Electrical characteristics
STM32F302xD STM32F302xE
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 66: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:
Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (seeTable 33: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:
I SW = V DD &times; f SW &times; C
where:
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT+CS
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
78/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 32. Switching output I/O current consumption
Symbol
Parameter
Conditions(1)
VDD = 3.3 V
Cext = 0 pF
C = CINT + CEXT+ CS
VDD = 3.3 V
Cext = 10 pF
C = CINT + CEXT +CS
ISW
I/O current
consumption
VDD = 3.3 V
Cext = 22 pF
C = CINT + CEXT +CS
VDD = 3.3 V
Cext = 33 pF
C = CINT + CEXT+ CS
VDD = 3.3 V
Cext = 47 pF
C = CINT + CEXT+ CS
I/O toggling
frequency (fSW)
Typ
2 MHz
0.90
4 MHz
0.93
8 MHz
1.16
18 MHz
1.60
36 MHz
2.51
48 MHz
2.97
2 MHz
0.93
4 MHz
1.06
8 MHz
1.47
18 MHz
2.26
36 MHz
3.39
48 MHz
5.99
2 MHz
1.03
4 MHz
1.30
8 MHz
1.79
18 MHz
3.01
36 MHz
5.99
2 MHz
1.10
4 MHz
1.31
8 MHz
2.06
18 MHz
3.47
36 MHz
8.35
2 MHz
1.20
4 MHz
1.54
8 MHz
2.46
18 MHz
4.51
36 MHz
9.98
Unit
mA
1. CS = 5 pF (estimated value).
DocID026900 Rev 4
79/168
146
Electrical characteristics
STM32F302xD STM32F302xE
On-chip peripheral current consumption
The MCU is placed under the following conditions:
•
all I/O pins are in analog input configuration
•
all peripherals are disabled unless otherwise mentioned
•
the given value is calculated by measuring the current consumption
•
–
with all peripherals clocked off
–
with only one peripheral clocked on
ambient operating temperature at 25&deg;C and VDD = VDDA = 3.3 V.
Table 33. Peripheral current consumption
Peripheral
Typical consumption(1)
Unit
IDD
BusMatrix (2)
8.3
DMA1
7.0
DMA2
5.4
FSMC
35.0
CRC
1.5
GPIOH
1.3
GPIOA
5.4
GPIOB
5.3
GPIOC
5.4
GPIOD
5.0
GPIOE
5.4
GPIOF
5.2
GPIOG
5.0
TSC
5.2
ADC1&amp;2
APB2-Bridge
80/168
15.4
(3)
3.1
SYSCFG
4.0
TIM1
26.0
USART1
17.7
SPI4
6.2
TIM15
11.9
TIM16
8.0
TIM17
8.5
DocID026900 Rev 4
&micro;A/MHz
STM32F302xD STM32F302xE
Electrical characteristics
Table 33. Peripheral current consumption (continued)
Peripheral
Typical consumption(1)
Unit
IDD
APB1-Bridge (3)
6.7
TIM2
39.2
TIM3
30.8
TIM4
31.3
TIM6
4.3
WWDG
1.3
SPI2
33.6
SPI3
33.9
USART2
39.3
USART3
39.3
UART4
29.8
UART5
27.0
I2C1
6.7
I2C2
6.4
USB
14.7
CAN
25.6
PWR
3.7
DAC
22.1
I2C3
6.8
&micro;A/MHz
1. The power consumption of the analog part (IDDA) of peripherals such as ADC, DAC, Comparators, OpAmp
is not included. Refer to the tables of characteristics in the subsequent sections.
2. BusMatrix is automatically active when at least one master is ON (CPU, DMA1 or DMA2).
3. The APBx bridge is automatically active when at least one peripheral is ON on the same bus.
DocID026900 Rev 4
81/168
146
Electrical characteristics
6.3.6
STM32F302xD STM32F302xE
Wakeup time from low-power mode
The wakeup times given in Table 34 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
•
For Stop or Sleep mode: the wakeup event is WFE.
•
WKUP1 (PA0) pin is used to wake up from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 19.
Table 34. Low-power mode wakeup timings
Symbol
tWUSTOP
Parameter
Wakeup from
Stop mode
Wakeup from
tWUSTANDBY(1) Standby
mode
tWUSLEEP
Wakeup from
Sleep mode
Typ @VDD, VDD = VDDA
Conditions
Max
2.0 V
2.4 V
2.7 V
3V
3.3 V
3.6 V
Regulator in
run mode
5.4
5.2
5.2
5.1
5.0
4.9
5.6
Regulator in
low power
mode
12.0
10.1
9.2
8.6
8.1
7.8
12.9
LSI and
IWDG OFF
91.0
77.1
71.7
68.0
65.1
63.1
139
-
6
-
Unit
&micro;s
CPU
clock
cycles
1. Data based on characterization results, not tested in production.
Table 35. Wakeup time using USART
82/168
Symbol
Parameter
Conditions
Typ
Max
Stop mode with
main regulator in
low power mode
-
13.125
tWUUSART
Wakeup time needed to
calculate the maximum
USART baudrate allowing
to wakeup up from stop
mode when USART clock
source is HSI
Stop mode with
main regulator in
run mode
-
DocID026900 Rev 4
Unit
&micro;s
3.125
STM32F302xD STM32F302xE
6.3.7
Electrical characteristics
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.15. However, the
recommended clock input waveform is shown in Figure 15.
Table 36. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1
8
32
MHz
fHSE_ext
User external clock source
frequency(1)
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-
VDD
VHSEL
OSC_IN input pin low level voltage
VSS
-
0.3VDD
15
-
-
-
-
20
tw(HSEH)
tw(HSEL)
tr(HSE)
tf(HSE)
OSC_IN high or low
-
time(1)
V
ns
OSC_IN rise or fall time(1)
1. Guaranteed by design, not tested in production.
Figure 15. High-speed external clock source AC timing diagram
WZ +6(+
9+6(+
9+6(/
WU +6(
WI +6(
WZ +6(/
W
7+6(
069
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The
external clock signal has to respect the I/O characteristics in Section 6.3.15. However, the
recommended clock input waveform is shown in Figure 16.
DocID026900 Rev 4
83/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 37. Low-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
32.768
1000
kHz
0.7VDD
-
VDD
VSS
-
0.3VDD
fLSE_ext
User External clock source
frequency(1)
VLSEH
OSC32_IN input pin high level
voltage
VLSEL
OSC32_IN input pin low level
voltage
tw(LSEH)
tw(LSEL)
OSC32_IN high or low time(1)
450
-
-
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
-
-
50
V
-
ns
1. Guaranteed by design, not tested in production.
Figure 16. Low-speed external clock source AC timing diagram
WZ /6(+
9/6(+
9/6(/
WU /6(
WI /6(
WZ /6(/
W
7/6(
069
84/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 38. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins to minimize output distortion and startup stabilization time. Refer to the
crystal resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 38. HSE oscillator characteristics
Symbol
fOSC_IN
RF
Conditions(1)
Min(2)
Typ
Max(2)
Unit
Oscillator frequency
-
4
8
32
MHz
Feedback resistor
-
-
200
-
kΩ
-
-
8.5
VDD= 3.3 V, Rm= 30Ω,
CL=10 pF@8 MHz
-
0.4
-
VDD= 3.3 V, Rm= 45Ω,
CL=10 pF@8 MHz
-
0.5
-
VDD= 3.3 V, Rm= 30Ω,
CL=5 pF@32 MHz
-
0.8
-
VDD= 3.3 V, Rm= 30Ω,
CL=10 pF@32 MHz
-
1
-
VDD= 3.3 V, Rm= 30Ω,
CL=20 pF@32 MHz
-
1.5
-
Startup
10
-
-
mA/V
VDD is stabilized
-
2
-
ms
Parameter
During startup
IDD
gm
tSU(HSE)(4)
HSE current consumption
Oscillator transconductance
Startup time
(3)
mA
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design, not tested in production.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer.
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (Typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 17). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
DocID026900 Rev 4
85/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 17. Typical application with an 8 MHz crystal
5HVRQDWRUZLWKLQWHJUDWHG
FDSDFLWRUV
&amp;/
26&amp;B,1
0+]
UHVRQDWRU
&amp;/
5(;7 I+6(
5)
%LDV
FRQWUROOHG
JDLQ
26&amp;B287
069
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 39. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins to minimize output distortion and startup stabilization time. Refer to the
crystal resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz)
Symbol
IDD
gm
tSU(LSE)(3)
Parameter
LSE current consumption
Oscillator
transconductance
Startup time
Conditions(1)
LSEDRV[1:0]=00
lower driving capability
LSEDRV[1:0]=01
medium low driving capability
LSEDRV[1:0]=10
medium high driving capability
LSEDRV[1:0]=11
higher driving capability
LSEDRV[1:0]=00
lower driving capability
LSEDRV[1:0]=01
medium low driving capability
LSEDRV[1:0]=10
medium high driving capability
LSEDRV[1:0]=11
higher driving capability
VDD is stabilized
Min(2)
Typ
Max(2)
-
0.5
0.9
-
-
1
-
-
1.3
-
-
1.6
5
-
-
8
-
-
15
-
-
25
-
-
-
2
-
Unit
&micro;A
&micro;A/V
s
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
2. Guaranteed by design, not tested in production.
3.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer.
86/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Note:
Electrical characteristics
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 18. Typical application with a 32.768 kHz crystal
5HVRQDWRUZLWKLQWHJUDWHG
FDSDFLWRUV
&amp;/
26&amp;B,1
I/6(
'ULYH
SURJUDPPDEOH
DPSOLILHU
N+]
UHVRQDWRU
26&amp;B287
&amp;/
069
Note:
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8
Internal clock source characteristics
The parameters given in Table 40 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.
High-speed internal (HSI) RC oscillator
Table 40. HSI oscillator characteristics(1)
Symbol
fHSI
TRIM
DuCy(HSI)
ACCHSI
Parameter
Conditions
Min
Typ
-
-
Frequency
HSI user trimming step
Duty cycle
Accuracy of the HSI
oscillator
-
-
-
(2)
Unit
8
-
MHz
-
(2)
1
(2)
%
-
55
TA = -40 to 105&deg;C
-2.8(3)
-
3.8(3)
TA = -10 to 85&deg;C
-1.9(3)
-
2.3(3)
TA = 0 to 85&deg;C
-1.9(3)
-
2(3)
TA = 0 to 70&deg;C
-1.3(3)
-
2(3)
TA = 0 to 55&deg;C
-1(3)
-
2(3)
-1
-
1
-
2(2)
μs
80
100(2)
μA
TA = 25&deg;C(4)
45
Max
tSU(HSI)
HSI oscillator startup time
-
1(2)
IDDA(HSI)
HSI oscillator power
consumption
-
-
%
%
1. VDDA = 3.3 V, TA = –40 to 105 &deg;C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
4. Factory calibrated, parts not soldered.
DocID026900 Rev 4
87/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 19. HSI oscillator accuracy characterization results for soldered parts
.&quot;9
.*/
5&lt;$&gt;
&quot;
069
Low-speed internal (LSI) RC oscillator
Table 41. LSI oscillator characteristics(1)
Symbol
fLSI
Parameter
Min
Typ
Max
Unit
30
40
50
kHz
Frequency
tsu(LSI)(2)
LSI oscillator startup time
-
-
85
&micro;s
IDD(LSI)(2)
LSI oscillator power consumption
-
0.75
1.2
&micro;A
1. VDDA = 3.3 V, TA = –40 to 105 &deg;C unless otherwise specified.
2. Guaranteed by design, not tested in production.
6.3.9
PLL characteristics
The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.
Table 42. PLL characteristics
Symbol
fPLL_IN
fPLL_OUT
tLOCK
Jitter
Parameter
Value
Unit
Min
Typ
Max
1(2)
-
24(2)
MHz
PLL input clock duty cycle
(2)
40
-
60(2)
%
PLL multiplier output clock
16(2)
-
72
MHz
-
-
200(2)
&micro;s
-
(2)
ps
PLL input clock(1)
PLL lock time
Cycle-to-cycle jitter
-
300
1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
2. Guaranteed by design, not tested in production.
88/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
6.3.10
Electrical characteristics
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 &deg;C unless otherwise specified.
Table 43. Flash memory characteristics
Min
Typ
Max(1)
Unit
16-bit programming time TA = –40 to +105 &deg;C
40
53.5
60
&micro;s
Page (2 KB) erase time
TA = –40 to +105 &deg;C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 &deg;C
20
-
40
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Symbol
tprog
tERASE
Parameter
Conditions
1. Guaranteed by design, not tested in production.
Table 44. Flash memory endurance and data retention
Value
Symbol
NEND
tRET
Parameter
Endurance
Data retention
Conditions
TA = –40 to +85 &deg;C (6 suffix versions)
TA = –40 to +105 &deg;C (7 suffix versions)
10
1 kcycle(2) at TA = 85 &deg;C
30
(2)
1 kcycle
10
at TA = 105 &deg;C
kcycle(2)
at TA = 55 &deg;C
Unit
Min(1)
kcycles
10
Years
20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
6.3.11
FSMC characteristics
Unless otherwise specified, the parameters given in Table 45 to Table 60 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 19 with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.15: I/O port characteristics: for more details on the input/output
characteristics.
DocID026900 Rev 4
89/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Asynchronous waveforms and timings
Figure 20 to Figure 23 represent asynchronous waveforms and Table 45 to Table 52
provide the corresponding timings. The results shown in these tables are obtained with the
following FSMC configuration:
•
AddressSetupTime = 0x1
•
AddressHoldTime = 0x1
•
DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
•
BusTurnAroundDuration = 0x0
•
NOR NWAIT pulse width= 1THCLK
In all the timing tables, the THCLK is the HCLK clock period.
Figure 20. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings
TW.%
&amp;-#?.%
TV./%?.%
T W./%
T H.%?./%
&amp;-#?./%
&amp;-#?.7%
TV!?.%
&amp;-#?!;=
T H!?./%
!DDRESS
TV&quot;,?.%
T H&quot;,?./%
&amp;-#?.&quot;,;=
T H$ATA?.%
T SU$ATA?./%
TH$ATA?./%
T SU$ATA?.%
$ATA
&amp;-#?$;=
T V.!$6?.%
TW.!$6
&amp;-#?.!$6
&amp;-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
90/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 45. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)
Symbol
Min
Max
2THCLK– 1
2THCLK+1
0
1
2THCLK
2THCLK+ 1.5
0.5
-
FMC_NEx low to FMC_A valid
-
3
th(A_NOE)
Address hold time after FMC_NOE high
0
-
tv(BL_NE)
FMC_NEx low to FMC_BL valid
-
2 (NA)
th(BL_NOE)
FMC_BL hold time after FMC_NOE high
0
-
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK + 6
-
tsu(Data_NOE)
Data to FMC_NOEx high setup time
THCLK +7
-
th(Data_NOE)
Data hold time after FMC_NOE high
0
-
th(Data_NE)
Data hold time after FMC_NEx high
0
-
tv(NADV_NE)
FMC_NEx low to FMC_NADV low
-
2
FMC_NADV low time
-
THCLK +1.5
tw(NE)
tv(NOE_NE)
tw(NOE)
th(NE_NOE)
tv(A_NE)
tw(NADV)
Parameter
FMC_NE low time
FMC_NEx low to FMC_NOE low
FMC_NOE low time
FMC_NOE high to FMC_NE high hold
time
Unit
ns
1. Based on characterization, not tested in production
Table 46. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings(1)
Symbol
Min
Max
FMC_NE low time
7THCLK +0.5
7THCLK+ 1
FMC_NWE low time
6THCLK -1.5
6THCLK +2
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
4THCLK +5
-
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT
invalid
4THCLK-3
-
tw(NE)
tw(NOE)
Parameter
Unit
ns
1. Based on characterization, not tested in production.
DocID026900 Rev 4
91/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 21. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
TW.%
&amp;-#?.%X
&amp;-#?./%
TV.7%?.%
TW.7%
T H.%?.7%
&amp;-#?.7%
TV!?.%
&amp;-#?!;=
TH!?.7%
!DDRESS
TV&quot;,?.%
&amp;-#?.&quot;,;=
TH&quot;,?.7%
.&quot;,
TV$ATA?.%
TH$ATA?.7%
$ATA
&amp;-#?$;=
T V.!$6?.%
&amp;-#?.!$6 TW.!$6
&amp;-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
Table 47. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)
Symbol
tw(NE)
tv(NWE_NE)
tw(NWE)
th(NE_NWE)
tv(A_NE)
Parameter
Min
Max
FMC_NE low time
3THCLK-1
3THCLK+2
FMC_NEx low to FMC_NWE low
THCLK+0.5
THCLK+1
THCLK-2
THCLK+1
THCLK-0.5
-
-
0
THCLK-1.5
-
FMC_NWE low time
FMC_NWE high to FMC_NE high hold
time
FMC_NEx low to FMC_A valid
th(A_NWE)
Address hold time after FMC_NWE high
tv(BL_NE)
FMC_NEx low to FMC_BL valid
-
1
THCLK-0.5
-
Data to FMC_NEx low to Data valid
-
THCLK+ 3
th(Data_NWE)
Data hold time after FMC_NWE high
THCLK+0.5
-
tv(NADV_NE)
FMC_NEx low to FMC_NADV low
-
2.5
FMC_NADV low time
-
THCLK+2
th(BL_NWE)
FMC_BL hold time after FMC_NWE high
tv(Data_NE)
tw(NADV)
1. Based on characterization, not tested in production.
92/168
DocID026900 Rev 4
Unit
ns
STM32F302xD STM32F302xE
Electrical characteristics
Table 48. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings(1)
Symbol
tw(NE)
tw(NWE)
Parameter
Min
Max
FMC_NE low time
8THCLK+1
8THCLK+2
FMC_NWE low time
6THCLK-1
6THCLK+2
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
5THCLK-0.5
-
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT
invalid
4THCLK+2
-
Unit
ns
1. Based on characterization, not tested in production.
Table 49. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)
Symbol
Min
Max
FMC_NE low time
8THCLK+2
8THCLK+2
FMC_NWE low time
6THCLK-1
6THCLK+1.5
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
4THCLK+6
-
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT
invalid
4THCLK-4
-
tw(NE)
tw(NOE)
Parameter
Unit
ns
1. Based on characterization, not tested in production.
DocID026900 Rev 4
93/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 22. Asynchronous multiplexed PSRAM/NOR read timings
TW.%
&amp;-#? .%
TV./%?.%
T H.%?./%
&amp;-#?./%
T W./%
&amp;-#?.7%
TH!?./%
TV!?.%
&amp;-#? !;=
!DDRESS
TV&quot;,?.%
TH&quot;,?./%
&amp;-#? .&quot;,;=
.&quot;,
TH$ATA?.%
TSU$ATA?.%
T V!?.%
TSU$ATA?./%
$ATA
!DDRESS
&amp;-#? !$;=
TH$ATA?./%
TH!$?.!$6
T V.!$6?.%
TW.!$6
&amp;-#?.!$6
&amp;-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
Table 50. Asynchronous multiplexed PSRAM/NOR read timings(1)
Symbol
tw(NE)
tv(NOE_NE)
tw(NOE)
th(NE_NOE)
tv(A_NE)
tv(NADV_NE)
tw(NADV)
94/168
Parameter
Min
Max
3THCLK-0.5
3THCLK+1
FMC_NEx low to FMC_NOE low
2THCLK
2THCLK+1
FMC_NOE low time
THCLK-2
THCLK+2
FMC_NOE high to FMC_NE high hold
time
0
-
FMC_NEx low to FMC_A valid
-
1.5
FMC_NEx low to FMC_NADV low
0
2
THCLK-2
THCLK+2
FMC_NE low time
FMC_NADV low time
th(AD_NADV)
FMC_AD(address) valid hold time after
FMC_NADV high
0
-
th(A_NOE)
Address hold time after FMC_NOE high
THCLK-0.5
-
th(BL_NOE)
FMC_BL time after FMC_NOE high
0
-
DocID026900 Rev 4
Unit
ns
STM32F302xD STM32F302xE
Electrical characteristics
Table 50. Asynchronous multiplexed PSRAM/NOR read timings(1) (continued)
Symbol
tv(BL_NE)
Parameter
Min
Max
-
2
FMC_NEx low to FMC_BL valid
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK
-
tsu(Data_NOE)
Data to FMC_NOE high setup time
THCLK+1
-
th(Data_NE)
Data hold time after FMC_NEx high
0
-
th(Data_NOE)
Data hold time after FMC_NOE high
0
-
Unit
ns
1. Based on characterization, not tested in production.
Figure 23. Asynchronous multiplexed PSRAM/NOR write timings
TW.%
&amp;-#? .%X
&amp;-#?./%
TV.7%?.%
TW.7%
T H.%?.7%
&amp;-#?.7%
TH!?.7%
TV!?.%
&amp;-#? !;=
!DDRESS
TV&quot;,?.%
&amp;-#? .&quot;,;=
.&quot;,
T V!?.%
&amp;-#? !$;=
TH&quot;,?.7%
T V$ATA?.!$6
!DDRESS
TH$ATA?.7%
$ATA
TH!$?.!$6
T V.!$6?.%
TW.!$6
&amp;-#?.!$6
&amp;-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
DocID026900 Rev 4
95/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 51. Asynchronous multiplexed PSRAM/NOR write timings(1)
Symbol
Min
Max
4THCLK-1
4THCLK+1
THCLK
THCLK+0.5
FMC_NWE low time
2THCLK-0.5
2THCLK+1
FMC_NWE high to FMC_NE high hold
time
THCLK-0.5
-
FMC_NEx low to FMC_A valid
-
5
FMC_NEx low to FMC_NADV low
1
2.5
FMC_NADV low time
THCLK-2
THCLK+2
FMC_AD(adress) valid hold time after
FMC_NADV high)
THCLK-2
-
th(A_NWE)
Address hold time after FMC_NWE high
THCLK-1
-
th(BL_NWE)
FMC_BL hold time after FMC_NWE high
THCLK-0.5
-
tw(NE)
tv(NWE_NE)
tw(NWE)
th(NE_NWE)
tv(A_NE)
tv(NADV_NE)
tw(NADV)
th(AD_NADV)
Parameter
FMC_NE low time
FMC_NEx low to FMC_NWE low
tv(BL_NE)
FMC_NEx low to FMC_BL valid
-
1
tv(Data_NADV)
FMC_NADV high to Data valid
-
THCLK +3.5
th(Data_NWE)
Data hold time after FMC_NWE high
THCLK +0.5
-
Unit
ns
1. Based on characterization, not tested in production.
Table 52. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)
Symbol
tw(NE)
tw(NWE)
Parameter
Min
Max
FMC_NE low time
9THCLK
9THCLK+0.5
FMC_NWE low time
6THCLK
6THCLK+2
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
5THCLK+6
-
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT
invalid
5THCLK-5
-
Unit
ns
1. Based on characterization, not tested in production.
Synchronous waveforms and timings
Figure 24 and Figure 27 present the synchronous waveforms and Table 53 to Table 56
provide the corresponding timings. The results shown in these tables are obtained with the
following FSMC configuration:
•
BurstAccessMode = FMC_BurstAccessMode_Enable;
•
MemoryType = FMC_MemoryType_CRAM;
•
WriteBurst = FMC_WriteBurst_Enable;
•
CLKDivision = 1;
•
DataLatency = 2 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum FMC_CLK =
36 MHz).
96/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Figure 24. Synchronous multiplexed NOR/PSRAM read timings
&quot;53452. TW#,+
TW#,+
&amp;-#?#,+
$ATA LATENCY TD#,+, .%X,
&amp;-#?.%X
T D#,+, .!$6,
TD#,+( .%X(
TD#,+, .!$6(
&amp;-#?.!$6
TD#,+, !6
TD#,+( !)6
&amp;-#?!;=
TD#,+, ./%,
TD#,+( ./%(
&amp;-#?./%
T D#,+, !$6
&amp;-#?!$;=
TD#,+, !$)6
TSU!$6 #,+(
!$;=
TH#,+( !$6
TSU!$6 #,+(
$
TSU.7!)46 #,+(
&amp;-#?.7!)4
7!)4#&amp;' B
7!)40/, B
&amp;-#?.7!)4
7!)4#&amp;' B
7!)40/, B
$
TH#,+( .7!)46
TSU.7!)46 #,+(
TSU.7!)46 #,+(
TH#,+( !$6
TH#,+( .7!)46
TH#,+( .7!)46
-36
Table 53. Synchronous multiplexed NOR/PSRAM read timings(1)
Symbol
tw(CLK)
Parameter
FMC_CLK period
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH_NExH)
FMC_CLK high to FMC_NEx high (x=
0…2)
td(CLKL-NADVL)
td(CLKL-NADVH)
Min
Max
2THCLK
-
-
5
THCLK+1
-
FMC_CLK low to FMC_NADV low
-
7
FMC_CLK low to FMC_NADV high
2.5
-
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid
(x=16…25)
-
3
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid
(x=16…25)
0
-
td(CLKL-NOEL)
FMC_CLK low to FMC_NOE low
-
6
td(CLKH-NOEH)
FMC_CLK high to FMC_NOE high
THCLK+1
-
-
2
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
DocID026900 Rev 4
Unit
ns
97/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 53. Synchronous multiplexed NOR/PSRAM read timings(1) (continued)
Symbol
Parameter
Min
Max
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
0
-
tsu(ADV-CLKH)
FMC_A/D[15:0] valid data before
FMC_CLK high
4
-
th(CLKH-ADV)
FMC_A/D[15:0] valid data after
FMC_CLK high
6
-
tsu(NWAIT-CLKH)
FMC_NWAIT valid before FMC_CLK high
3
-
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
4
-
Unit
ns
1. Based on characterization, not tested in production.
Figure 25. Synchronous multiplexed PSRAM write timings
&quot;53452. TW#,+
TW#,+
&amp;-#?#,+
$ATA LATENCY TD#,+, .%X,
TD#,+( .%X(
&amp;-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&amp;-#?.!$6
TD#,+( !)6
TD#,+, !6
&amp;-#?!;=
TD#,+( .7%(
TD#,+, .7%,
&amp;-#?.7%
TD#,+, !$)6
TD#,+, !$6
&amp;-#?!$;=
TD#,+, $ATA
TD#,+, $ATA
!$;=
$
$
&amp;-#?.7!)4
7!)4#&amp;' B
7!)40/, B
TSU.7!)46 #,+(
TH#,+( .7!)46
TD#,+( .&quot;,(
&amp;-#?.&quot;,
-36
98/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 54. Synchronous multiplexed PSRAM write timings(1) (2)
Symbol
Parameter
Min
Max
tw(CLK)
FMC_CLK period, VDD range= 2.7 to 3.6
V
2THCLK-1
-
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
-
5.5
td(CLKH-NExH)
FMC_CLK high to FMC_NEx high (x=
0…2)
THCLK+1
-
td(CLKL-NADVL)
FMC_CLK low to FMC_NADV low
-
7
td(CLKL-NADVH)
FMC_CLK low to FMC_NADV high
2
-
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid
(x=16…25)
-
0
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid
(x=16…25)
0
-
td(CLKL-NWEL)
FMC_CLK low to FMC_NWE low
-
5.5
td(CLKH-NWEH)
FMC_CLK high to FMC_NWE high
THCLK+1
-
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
-
7.5
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
0
-
td(CLKL-DATA)
FMC_A/D[15:0] valid data after
FMC_CLK low
-
8
td(CLKL-NBLL)
FMC_CLK low to FMC_NBL low
-
6
td(CLKH-NBLH)
FMC_CLK high to FMC_NBL high
THCLK+1
-
tsu(NWAIT-CLKH)
FMC_NWAIT valid before FMC_CLK high
3
-
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
5
-
Unit
ns
1. Based on characterization, not tested in production.
2. CL = 30 pF.
DocID026900 Rev 4
99/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 26. Synchronous non-multiplexed NOR/PSRAM read timings
TW#,+
TW#,+
&amp;-#?#,+
TD#,+, .%X,
TD#,+( .%X(
$ATA LATENCY &amp;-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&amp;-#?.!$6
TD#,+( !)6
TD#,+, !6
&amp;-#?!;=
TD#,+, ./%,
TD#,+( ./%(
&amp;-#?./%
TSU$6 #,+(
TH#,+( $6
TSU$6 #,+(
&amp;-#?$;=
$
TSU.7!)46 #,+(
&amp;-#?.7!)4
7!)4#&amp;' B
7!)40/, B
$
TH#,+( .7!)46
TSU.7!)46 #,+(
&amp;-#?.7!)4
7!)4#&amp;' B
7!)40/, B
TSU.7!)46 #,+(
TH#,+( $6
T H#,+( .7!)46
TH#,+( .7!)46
-36
Table 55. Synchronous non-multiplexed NOR/PSRAM read timings(1)
Symbol
tw(CLK)
FMC_CLK period
Min
Max
2THCLK-1
-
-
5
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH-NExH)
FMC_CLK high to FMC_NEx high
(x= 0…2)
THCLK+1
-
td(CLKL-NADVL)
FMC_CLK low to FMC_NADV low
-
7
td(CLKL-NADVH)
FMC_CLK low to FMC_NADV high
2.5
-
-
7
THCLK
-
-
6
THCLK+1
-
3.5
-
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid
(x=16…25)
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid
(x=16…25)
td(CLKL-NOEL)
FMC_CLK low to FMC_NOE low
td(CLKH-NOEH)
FMC_CLK high to FMC_NOE high
tsu(DV-CLKH)
100/168
Parameter
FMC_D[15:0] valid data before
FMC_CLK high
DocID026900 Rev 4
Unit
ns
STM32F302xD STM32F302xE
Electrical characteristics
Table 55. Synchronous non-multiplexed NOR/PSRAM read timings(1) (continued)
Symbol
Parameter
Min
Max
FMC_D[15:0] valid data after FMC_CLK
high
5
-
tsu(NWAIT-CLKH)
FMC_NWAIT valid before FMC_CLK high
2
-
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
4
-
th(CLKH-DV)
Unit
ns
1. Based on characterization, not tested in production.
Figure 27. Synchronous non-multiplexed PSRAM write timings
TW#,+
TW#,+
&amp;-#?#,+
TD#,+, .%X,
TD#,+( .%X(
$ATA LATENCY &amp;-#?.%X
TD#,+, .!$6,
TD#,+, .!$6(
&amp;-#?.!$6
TD#,+( !)6
TD#,+, !6
&amp;-#?!;=
TD#,+, .7%,
TD#,+( .7%(
&amp;-#?.7%
TD#,+, $ATA
&amp;-#?$;=
TD#,+, $ATA
$
$
&amp;-#?.7!)4
7!)4#&amp;' B 7!)40/,
B
TSU.7!)46 #,+(
TD#,+( .&quot;,(
TH#,+( .7!)46
&amp;-#?.&quot;,
-36
DocID026900 Rev 4
101/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 56. Synchronous non-multiplexed PSRAM write timings(1)
Symbol
tw(CLK)
Parameter
FMC_CLK period
Min
Max
2THCLK-1
-
-
6
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH-NExH)
FMC_CLK high to FMC_NEx high
(x= 0…2)
THCLK+1.5
-
td(CLKL-NADVL)
FMC_CLK low to FMC_NADV low
-
7.5
td(CLKL-NADVH)
FMC_CLK low to FMC_NADV high
0
-
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid
(x=16…25)
-
6.5
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid
(x=16…25)
0
-
td(CLKL-NWEL)
FMC_CLK low to FMC_NWE low
-
0
td(CLKH-NWEH)
FMC_CLK high to FMC_NWE high
THCLK+2
-
td(CLKL-Data)
FMC_D[15:0] valid data after FMC_CLK
low
-
7.5
td(CLKL-NBLL)
FMC_CLK low to FMC_NBL low
-
7
td(CLKH-NBLH)
FMC_CLK high to FMC_NBL high
THCLK+0.5
-
tsu(NWAIT-CLKH)
FMC_NWAIT valid before FMC_CLK high
2
-
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
4
-
Unit
ns
1. Based on characterization, not tested in production.
PC Card/CompactFlash controller waveforms and timings
Figure 28 to Figure 33 present the PC Card/Compact Flash controller waveforms, and
Table 57 to Table 58 provide the corresponding timings. The results shown in this table are
obtained with the following FSMC configuration:
•
COM.FMC_SetupTime = 0x04;
•
COM.FMC_WaitSetupTime = 0x07;
•
COM.FMC_HoldSetupTime = 0x04;
•
COM.FMC_HiZSetupTime = 0x05;
•
ATT.FMC_SetupTime = 0x04;
•
ATT.FMC_WaitSetupTime = 0x07;
•
ATT.FMC_HoldSetupTime = 0x04;
•
ATT.FMC_HiZSetupTime = 0x05;
•
IO.FMC_SetupTime = 0x04;
•
IO.FMC_WaitSetupTime = 0x07;
•
IO.FMC_HoldSetupTime = 0x04;
•
IO.FMC_HiZSetupTime = 0x05;
•
TCLRSetupTime = 0;
•
TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.
102/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 57. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space(1)
Symbol
Parameter
Min
Max
-
0
tv(NCEx-A)
FMC_Ncex low to FMC_Ay valid
th(NCEx_AI)
FMC_NCEx high to FMC_Ax invalid
2.5
-
td(NREG-NCEx)
FMC_NCEx low to FMC_NREG valid
-
2
th(NCEx-NREG)
FMC_NCEx high to FMC_NREG invalid
0
-
td(NCEx-NWE)
FMC_NCEx low to FMC_NWE low
-
5THCLK+2
8THCLK
8THCLK+0.5
tw(NWE)
FMC_NWE low width
td(NWE_NCEx)
FMC_NWE high to FMC_NCEx high
5THCLK-1
-
tv (NWE-D)
FMC_NWE low to FMC_D[15:0] valid
-
5
th (NWE-D)
FMC_NWE high to FMC_D[15:0] invalid
4THCLK-1
-
td (D-NWE)
FMC_D[15:0] valid before FMC_NWE
high
13THCLK-3
-
-
5THCLK+2
FMC_NOE low width
8THCLK-1
8THCLK+2
FMC_NOE high to FMC_NCEx high
5THCLK-1
-
FMC_D[15:0] valid data before
FMC_NOE high
THCLK+2
-
0
-
td(NCEx-NOE)
tw(NOE)
td(NOE_NCEx)
tsu (D-NOE)
th(NOE-D)
FMC_NCEx low to FMC_NOE low
FMC_N0E high to FMC_D[15:0] invalid
Unit
ns
1. Based on characterization, not tested in production.
DocID026900 Rev 4
103/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 28. PC Card/CompactFlash controller waveforms for common memory
read access
&amp;-#?.#%?
&amp;-#?.#%?
TH.#%X !)
TV.#%X !
&amp;-#?!;=
TH.#%X .2%'
TH.#%X .)/2$
TH.#%X .)/72
TD.2%' .#%X
TD.)/2$ .#%X
&amp;-#?.2%'
&amp;-#?.)/72
&amp;-#?.)/2$
&amp;-#?.7%
TD.#%? ./%
&amp;-#?./%
TW./%
TSU$ ./%
TH./% $
&amp;-#?$;=
-36
1. FMC_NCE4_2 remains high (inactive during 8-bit access.
Figure 29. PC Card/CompactFlash controller waveforms for common memory
write access
&amp;-#?.#%?
&amp;-#?.#%?
(IGH
TV.#%? !
TH.#%? !)
&amp;-#?!;=
TH.#%? .2%'
TH.#%? .)/2$
TH.#%? .)/72
TD.2%' .#%?
TD.)/2$ .#%?
&amp;-#?.2%'
&amp;-#?.)/72
&amp;-#?.)/2$
TD.#%? .7%
TW.7%
TD.7% .#%?
&amp;-#?.7%
&amp;-#?./%
-%-X(): TD$ .7%
TV.7% $
TH.7% $
&amp;-#?$;=
-36
104/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Figure 30. PC Card/CompactFlash controller waveforms for attribute memory
read access
&amp;-#?.#%?
TV.#%? !
&amp;-#?.#%?
TH.#%? !)
(IGH
&amp;-#?!;=
&amp;-#?.)/72
&amp;-#?.)/2$
TD.2%' .#%?
TH.#%? .2%'
&amp;-#?.2%'
&amp;-#?.7%
TD.#%? ./%
TW./%
TD./% .#%?
&amp;-#?./%
TSU$ ./%
TH./% $
&amp;-#?$;=
-36
1. Only data bits 0...7 are read (bits 8...15 are disregarded).
DocID026900 Rev 4
105/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 31. PC Card/CompactFlash controller waveforms for attribute memory
write access
&amp;-#?.#%?
&amp;-#?.#%?
(IGH
TV.#%? !
TH.#%? !)
&amp;-#?!;=
&amp;-#?.)/72
&amp;-#?.)/2$
TD.2%' .#%?
TH.#%? .2%'
&amp;-#?.2%'
TD.#%? .7%
TW.7%
&amp;-#?.7%
TD.7% .#%?
&amp;-#?./%
TV.7% $
&amp;-#?$;=
-36
1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).
Table 58. Switching characteristics for PC Card/CF read and write cycles in I/O
space(1)
Symbol
tw(NIOWR)
Parameter
FMC_NIOWR low width
tv(NIOWR-D)
FMC_NIOWR low to FMC_D[15:0] valid
th(NIOWR-D)
FMC_NIOWR high to FMC_D[15:0]
invalid
Max
8THCLK-0.5
-
-
5.5
4THCLK-0.5
-
td(NCE4_1-NIOWR)
FMC_NCE4_1 low to FMC_NIOWR valid
-
5THCLK+1
th(NCEx-NIOWR)
FMC_NCEx high to FMC_NIOWR invalid
4THCLK+0.5
-
td(NIORD-NCEx)
FMC_NCEx low to FMC_NIORD valid
-
5THCLK
th(NCEx-NIORD)
FMC_NCEx high to FMC_NIORD) valid
6THCLK+2
-
FMC_NIORD low width
8THCLK-1
8THCLK+1
tsu(D-NIORD)
FMC_D[15:0] valid before FMC_NIORD
high
THCLK+2
-
td(NIORD-D)
FMC_D[15:0] valid after FMC_NIORD
high
0
-
tw(NIORD)
1. Based on characterization, not tested in production.
106/168
Min
DocID026900 Rev 4
Unit
ns
STM32F302xD STM32F302xE
Electrical characteristics
Figure 32. PC Card/CompactFlash controller waveforms for I/O space read access
&amp;-#?.#%?
&amp;-#?.#%?
TH.#%? !)
TV.#%X !
&amp;-#?!;=
&amp;-#?.2%'
&amp;-#?.7%
&amp;-#?./%
&amp;-#?.)/72
TW.)/2$
TD.)/2$ .#%?
&amp;-#?.)/2$
TSU$ .)/2$
TD.)/2$ $
&amp;-#?$;=
-36
Figure 33. PC Card/CompactFlash controller waveforms for I/O space write access
&amp;-#?.#%?
&amp;-#?.#%?
TV.#%X !
TH.#%? !)
&amp;-#?!;=
&amp;-#?.2%'
&amp;-#?.7%
&amp;-#?./%
&amp;-#?.)/2$
T D.#%? .)/72
TW.)/72
&amp;-#?.)/72
!44X(): TV.)/72 $
TH.)/72 $
&amp;-#?$;=
-36
DocID026900 Rev 4
107/168
146
Electrical characteristics
STM32F302xD STM32F302xE
NAND controller waveforms and timings
Figure 34 and Figure 35 present the NAND controller synchronous waveforms, and
Table 59 and Table 60 provide the corresponding timings. The results shown in this table
are obtained with the following FSMC configuration:
•
COM.FMC_SetupTime = 0x01;
•
COM.FMC_WaitSetupTime = 0x03;
•
COM.FMC_HoldSetupTime = 0x02;
•
COM.FMC_HiZSetupTime = 0x03;
•
ATT.FMC_SetupTime = 0x01;
•
ATT.FMC_WaitSetupTime = 0x03;
•
ATT.FMC_HoldSetupTime = 0x02;
•
ATT.FMC_HiZSetupTime = 0x03;
•
Bank = FMC_Bank_NAND;
•
MemoryDataWidth = FMC_MemoryDataWidth_16b;
•
ECC = FMC_ECC_Enable;
•
ECCPageSize = FMC_ECCPageSize_512Bytes;
•
TCLRSetupTime = 0;
•
TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.
Figure 34. NAND controller read timings
&amp;-#?.#%X
!,% &amp;-#?!
#,% &amp;-#?!
&amp;-#?.7%
TD!,% ./%
TH./% !,%
&amp;-#?./% .2%
TSU$ ./%
TH./% $
&amp;-#?$;=
-36
108/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 59. Switching characteristics for NAND Flash read cycles(1) (2)
Symbol
Min
Max
FMC_NOE low width
6THCLK
6THCLK + 2
tsu(D-NOE)
FMC_D[15-0] valid data before
FMC_NOE high
THCLK+5
-
th(NOE-D)
FMC_D[15-0] valid data after FMC_NOE
high
0
-
td(ALE-NOE)
FMC_ALE valid before FMC_NOE low
-
6THCLK -0.5
th(NOE-ALE)
FMC_NWE high to FMC_ALE invalid
6THCLK-1
-
tw(NOE)
Parameter
Unit
ns
1. Based on characterization, not tested in production.
2. CL = 30 pF
Figure 35. NAND controller write timings
&amp;-#?.#%X
!,% &amp;-#?!
#,% &amp;-#?!
TH.7% !,%
TD!,% .7%
&amp;-#?.7%
&amp;-#?./% .2%
TH.7% $
TV.7% $
&amp;-#?$;=
-36
Table 60. Switching characteristics for NAND Flash write cycles(1)
Symbol
tw(NWE)
Parameter
FMC_NWE low width
Min
Max
4THCLK-0.5
4THCLK + 1.5
-
3.5
tv(NWE-D)
FMC_NWE low to FMC_D[15-0] valid
th(NWE-D)
FMC_NWE high to FMC_D[15-0] invalid
3THCLK -1.5
-
td(D-NWE)
FMC_D[15-0] valid before FMC_NWE
high
5THCLK – 3
-
td(ALE_NWE)
FMC_ALE valid before FMC_NWE low
-
4THCLK+2
th(NWE-ALE)
FMC_NWE high to FMC_ALE invalid
2THCLK-1
-
Unit
ns
1. Based on characterization, not tested in production.
DocID026900 Rev 4
109/168
146
Electrical characteristics
6.3.12
STM32F302xD STM32F302xE
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling two LEDs through I/O ports),
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 61. They are based on the EMS levels and classes
defined in application note AN1709.
Table 61. EMS characteristics
Symbol
Parameter
Conditions
Level/
Class
VFESD
VDD = 3.3 V, LQFP144, TA = +25&deg;C,
Voltage limits to be applied on any I/O pin to
fHCLK = 72 MHz
induce a functional disturbance
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP144, TA = +25&deg;C,
fHCLK = 72 MHz
conforms to IEC 61000-4-4
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
110/168
•
Corrupted program counter
•
Unexpected reset
•
Critical Data corruption (control registers...)
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Pre qualification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 62. EMI characteristics
Symbol Parameter
SEMI
6.3.13
Monitored
frequency band
Conditions
Max vs. [fHSE/fHCLK]
Unit
8/72 MHz
0.1 to 30 MHz
VDD = 3.6 V, TA = 25 &deg;C,
30 to 130 MHz
LQFP144 package
Peak level
compliant with IEC
130 MHz to 1GHz
61967-2
SAE EMI Level
7
15
dB&micro;V
31
4
-
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts &times; (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 63. ESD absolute maximum ratings
Symbol
VESD(HBM)
Ratings
Conditions
Electrostatic discharge
TA = +25 &deg;C, conforming
voltage (human body model) to ANSI/JEDEC JS-001
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
TA = +25 &deg;C, conforming
to ANSI/ESD STM5.3.1
Class
Maximum
value(1)
2
2000
Unit
V
C3
250
1. Data based on characterization results, not tested in production.
DocID026900 Rev 4
111/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•
A supply overvoltage is applied to each power supply pin
•
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 64. Electrical sensitivities
Symbol
LU
6.3.14
Parameter
Conditions
Class
TA = +105 &deg;C conforming to JESD78A
Static latch-up class
II Level A
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 &micro;A/+0 &micro;A range), or other functional failure (for example reset occurrence or oscillator
frequency deviation).
The test results are given in Table 65.
Table 65. I/O current injection susceptibility
Functional susceptibility
Symbol
IINJ
112/168
Description
Negative
injection
Positive
injection
Injected current on BOOT0
-0
NA
Injected current on PF3, PC1, PC2, PA1, PA2, PA3,
PA4, PA5, PA6, PA7, PB0, PB1, PE8, PE9, PE10, PE11,
PE12, PE13, PE14, PE15, PB13, PB14, PB15, PD8,
PD9, PD10, PD11, PD12, PD13, PD14 pins with
induced leakage current on adjacent pins less than 50 &micro;A or more than +400 &micro;A
-5
+5
Injected current on PF2, PF4, PC0, PC1, PC2, PC3,
PA0, PA1, PA2, PA3, PA4, PA5, PA6, PA7, PC4, PC5,
PB2, PB11 with induced leakage current on other pins
from this group less than -50 &micro;A or more than +400 &micro;A
-5
DocID026900 Rev 4
Unit
mA
+5
STM32F302xD STM32F302xE
Electrical characteristics
Table 65. I/O current injection susceptibility (continued)
Functional susceptibility
Symbol
IINJ
Description
Negative
injection
Positive
injection
Injected current on PB0, PB1, PE7, PE8, PE9, PE10,
PE11, PE12, PE13, PE14, PE15, PB12, PB13, PB14,
P15, PD8, PD9, PD10, PD11, PD12, PD13, PD14 with
induced leakage current on other pins from this group
less than -50 &micro;A or more than +400 &micro;A
-5
+5
Injected current on any other FT and FTf pins
-5
NA
Injected current on any other pins
-5
+5
Unit
mA
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
6.3.15
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 66 are derived from tests
performed under the conditions summarized in Table 19. All I/Os are CMOS and TTL
compliant.
Table 66. I/O static characteristics
Symbol
VIL
Parameter
Low level input
voltage
Conditions
Min
Typ
Max
TC and TTa I/O
-
-
0.3 VDD+0.07 (1)
FT and FTf I/O
-
-
0.475 VDD-0.2 (1)
BOOT0
-
-
0.3 VDD–0.3 (1)
All I/Os except BOOT0
-
-
0.3 VDD (2)
TC and TTa I/O
0.445 VDD+0.398 (1)
-
-
-
-
-
-
-
-
FT and FTf I/O
VIH
High level input
voltage
Vhys
Schmitt trigger
hysteresis
BOOT0
All I/Os except BOOT0
0.5 VDD+0.2
(1)
0.2 VDD+0.95
0.7 VDD
TC and TTa I/O
FT and FTf I/O
BOOT0
DocID026900 Rev 4
(2)
(1)
-
200 (1)
-
-
100
(1)
-
300
(1)
-
-
Unit
V
V
mV
113/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 66. I/O static characteristics (continued)
Symbol
Ilkg
Parameter
Input leakage
current (3)
Conditions
Min
Typ
Max
TC, FT and FTf I/O
TTa I/O in digital mode
VSS ≤VIN ≤VDD
-
-
&plusmn;0.1
TTa I/O in digital mode
VDD ≤VIN ≤VDDA
-
-
1
TTa I/O in analog mode
VSS ≤VIN ≤VDDA
-
-
&plusmn;0.2
FT and FTf I/O(4)
VDD ≤VIN ≤5 V
-
-
10
Unit
&micro;A
RPU
Weak pull-up
equivalent resistor(5)
VIN = VSS
25
40
55
kΩ
RPD
Weak pull-down
equivalent resistor(5)
VIN = VDD
25
40
55
kΩ
CIO
I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation.
2. Tested in production.
3. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 65: I/O
current injection susceptibility.
4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 36 and Figure 37 for standard I/Os.
Figure 36. TC and TTa I/O input characteristics - CMOS port
9,/9,+ 9
''
HQWV9
9,+PLQ
9
,+PLQ
QV
ODWLR
9 ''
LJQVLPX
V
H
G
Q
VHGR
GD
6VWDQ
&amp;02
XLUHP
UGUHT
9 ,+PLQ
XFWLRQ
%D
QSURG
L
7HVWHG
QV
LPXODWLR
'
9 'HVLJQV
G
Q
VHGR
9 ,/PD[
%D
$UHDQRWGHWHUPLQHG
&amp;026VWDQGDUGUHTXLUHPHQWV9,/PD[ 9''
9,/PD[
LRQ
URGXFW
VWHGLQS
7H
9'' 9
069
114/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Figure 37. TC and TTa I/O input characteristics - TTL port
9,/9,+ 9
WLRQV
OD
9 ''
QVLPX
9 ,+PLQ RQGHVLJ
G
%DVH
77/VWDQGDUGUHTXLUHPHQWV9,+PLQ 9
9,+PLQ
V
XODWLRQ
'
9 ' VLJQVLP
H
QG
VHGR
9 ,/PD[
%D
$UHDQRWGHWHUPLQHG
9,/PD[
77/VWDQGDUGUHTXLUHPHQWV9,/PD[ 9
9'' 9
069
Figure 38. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port
9,/9,+ 9
9''
9,+PLQ URGXFWLRQ
ODWLRQV
''
X
9
LJQVLP
9 ,/PD[ RQGHV
G
H
V
%D
$UHDQRWGHWHUPLQHG
&amp;026VWDQGDUGUHTXLUHPHQWV9,/PD[ 9''
GXFWLRQ
9 ,+PLQ
%
7HVWHGLQS
XODWLRQV
'
9 'VLJQVLP
H
RQG
DVHG
LUHPHQWV
QGDUGUHTX
&amp;026VWD
7HVWHGLQSUR
9'' 9
069
Figure 39. Five volt tolerant (FT and FTf) I/O input characteristics - TTL port
9,/9,+ 9
77/VWDQGDUGUHTXLUHPHQWV9,+PLQ 9
$UHDQRWGHWHUPLQHG
QV
'
ODWLR
9 ' QVLPX
9 ,+PLQ QGHVLJ
GR
%DVH
XODWLRQV
9 ''
HVLJQVLP
LQ
P
G
9 ,/ GRQ
%DVH
77/VWDQGDUGUHTXLUHPHQWV9,/PD[ 9
9'' 9
069
DocID026900 Rev 4
115/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or
source up to +/- 20 mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
•
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 17).
•
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
ΣIVSS (see Table 17).
Output voltage levels
Unless otherwise specified, the parameters given in Table 67 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 19. All I/Os (FT, TTa and TC unless otherwise specified) are CMOS and TTL
compliant.
Table 67. Output voltage characteristics
Symbol
Parameter
VOL(1)
Output low level voltage for an I/O pin
VOH(3)
Output high level voltage for an I/O pin
VOL (1)
Output low level voltage for an I/O pin
VOH (3)
Output high level voltage for an I/O pin
VOL(1)(4)
Output low level voltage for an I/O pin
VOH(3)(4)
Output high level voltage for an I/O pin
VOL(1)(4)
Output low level voltage for an I/O pin
VOH(3)(4)
Output high level voltage for an I/O pin
VOLFM+(4)(4)
Output low level voltage for an FTf I/O pin in
FM+ mode
Conditions
Min
Max
CMOS port(2)
IIO = +48 mA
2.7 V &lt; VDD &lt; 3.6 V
-
0.4
VDD–0.4
-
-
0.4
2.4
-
-
1.3
VDD–1.3
-
-
0.4
VDD–0.4
-
-
0.4
TTL port(2)
IIO = +8 mA
2.7 V &lt; VDD &lt; 3.6 V
IIO = +20 mA
2.7 V &lt; VDD &lt; 3.6 V
IIO = +6 mA
2 V &lt; VDD &lt; 2.7 V
IIO = +20 mA
2.7 V &lt; VDD &lt; 3.6 V
Unit
V
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 17 and the sum of
IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 17 and the sum
of IIO (I/O ports and control pins) must not exceed ΣIIO(PIN).
4. Data based on design simulation.
116/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 40 and
Table 68, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 19.
Table 68. I/O AC characteristics(1)
OSPEEDRy [1:0]
value(1)
x0
01
Symbol
fmax(IO)out
Maximum frequency(2)
tf(IO)out
Output high to low level
fall time
tr(IO)out
Output low to high level
rise time
fmax(IO)out
Maximum frequency(2)
tf(IO)out
Output high to low level
fall time
tr(IO)out
Output low to high level
rise time
fmax(IO)out
11
tf(IO)out
tr(IO)out
FM+
configuration(4)
-
Parameter
Maximum frequency(2)
Output high to low level
fall time
Output low to high level
rise time
fmax(IO)out
Maximum frequency(2)
tf(IO)out
Output high to low level
fall time
tr(IO)out
Output low to high level
rise time
tEXTIpw
Pulse width of external
signals detected by the
EXTI controller
Conditions
Min
Max
Unit
-
2(3)
MHz
-
125(3)
-
125(3)
-
10(3)
-
25(3)
-
25(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V
-
50(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V
-
30(3)
CL = 50 pF, VDD = 2 V to 2.7 V
-
20(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V
-
5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V
-
8(3)
CL = 50 pF, VDD = 2 V to 2.7 V
-
12(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V
-
5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V
-
8(3)
CL = 50 pF, VDD = 2 V to 2.7 V
-
12(3)
-
2(4)
-
12(4)
-
(4)
CL = 50 pF, VDD = 2 V to 3.6 V
CL = 50 pF, VDD = 2 V to 3.6 V
CL = 50 pF, VDD = 2 V to 3.6 V
ns
MHz
CL = 50 pF, VDD = 2 V to 3.6 V
CL = 50 pF, VDD = 2 to 3.6 V
-
ns
MHz
ns
MHz
ns
10(3)
34
-
ns
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the RM0365 reference manual for a description of
GPIO Port configuration register.
2. The maximum frequency is defined in Figure 40.
3. Guaranteed by design, not tested in production.
4. The I/O speed configuration is bypassed in FM+ I/O mode. Refer to the reference manual RM0365 for a description of FM+
I/O mode configuration.
DocID026900 Rev 4
117/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 40. I/O AC characteristics definition
WU ,2 RXW
WI ,2 RXW
7
0D[LPXPIUHTXHQF\LVDFKLHYHGLI WUWI  7DQGLIWKHGXW\F\FOHLV ZKHQORDGHGE\&amp;/
.47
1. See Table 68: I/O AC characteristics.
6.3.16
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 66).
Unless otherwise specified, the parameters given in Table 69 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 19.
Table 69. NRST pin characteristics
Symbol
Conditions
Min
Typ
Max
VIL(NRST)(1) NRST Input low level voltage
-
-
-
0.3VDD+
0.07(1)
VIH(NRST)(1) NRST Input high level voltage
-
0.445VDD+
0.398(1)
-
-
-
-
200
-
mV
VIN = VSS
25
40
55
kΩ
ns
ns
Vhys(NRST)
RPU
VF(NRST)(1)
Parameter
NRST Schmitt trigger voltage hysteresis
Weak pull-up equivalent resistor
NRST Input filtered pulse
VNF(NRST)(1) NRST Input not filtered pulse
(2)
-
-
-
100(1)
-
500(1)
-
-
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
118/168
DocID026900 Rev 4
Unit
V
STM32F302xD STM32F302xE
Electrical characteristics
Figure 41. Recommended NRST pin protection
([WHUQDO
UHVHWFLUFXLW 9''
538
1567 ,QWHUQDOUHVHW
)LOWHU
)
069
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 69. Otherwise the reset is not taken into account by the device.
3. Place the external capacitor 0.1u F on NRST as close as possible to the chip.
6.3.17
Timer characteristics
The parameters given in Table 70 are guaranteed by design.
Refer to Section 6.3.15: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 70. TIMx(1)(2) characteristics
Symbol
tres(TIM)
fEXT
ResTIM
tCOUNTER
Parameter
Timer resolution time
Timer external clock
frequency on CH1 to CH4
Timer resolution
16-bit counter clock period
Maximum possible count
tMAX_COUNT
with 32-bit counter
Conditions
Min
Max
Unit
-
1
-
tTIMxCLK
fTIMxCLK = 72 MHz
13.9
-
ns
fTIMxCLK = 144 MHz
6.95
-
ns
0
fTIMxCLK/2
MHz
fTIMxCLK = 72 MHz
0
36
MHz
TIMx (except TIM2)
-
16
TIM2
-
32
-
1
65536
tTIMxCLK
fTIMxCLK = 72 MHz
0.0139
910
&micro;s
fTIMxCLK = 144 MHz
0.0069
455
&micro;s
-
-
65536 &times; 65536
tTIMxCLK
fTIMxCLK = 72 MHz
-
59.65
s
fTIMxCLK = 144 MHz
-
29.825
s
-
bit
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3, TIM4, TIM15, TIM16 and TIM17 timers.
2. Guaranteed by design, not tested in production.
DocID026900 Rev 4
119/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 71. IWDG min/max timeout period at 40 kHz (LSI) (1)
Prescaler divider
PR[2:0] bits
Min timeout (ms) RL[11:0]=
0x000
Max timeout (ms) RL[11:0]=
0xFFF
/4
0
0.1
409.6
/8
1
0.2
819.2
/16
2
0.4
1638.4
/32
3
0.8
3276.8
/64
4
1.6
6553.6
/128
5
3.2
13107.2
/256
7
6.4
26214.4
1. These timings are given for a 40 kHz clock but the microcontroller internal RC frequency can vary from 30
to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing
of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty.
Table 72. WWDG min-max timeout value @72 MHz (PCLK)(1)
Prescaler
WDGTB
Min timeout value
Max timeout value
1
0
0.05687
3.6409
2
1
0.1137
7.2817
4
2
0.2275
14.564
8
3
0.4551
29.127
1. Guaranteed by design, not tested in production.
6.3.18
Communications interfaces
I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev.03 for:
•
Standard-mode (Sm): with a bit rate up to 100 kbit/s
•
Fast-mode (Fm): with a bit rate up to 400 kbit/s
•
Fast-mode Plus (Fm+): with a bit rate up to 1Mbits/s
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to Reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDDIOx is disabled, but is still present. Only FTf I/O pins support
Fm+ low level output current maximum requirement. Refer to Section 6.3.15: I/O port
characteristics.
All I2C I/Os embed an analog filter, refer to the Table 73: I2C analog filter characteristics.
120/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 73. I2C analog filter characteristics(1)
Symbol
tAF
Parameter
Pulse width of spikes that are
suppressed by the analog filter
Min
Max
Unit
50
260
ns
1. Guaranteed by design, not tested in production.
SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 74 for SPI or in Table 75 for I2S
are derived from tests performed under ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 19.
Refer to Section 6.3.15: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).
Table 74. SPI characteristics(1)
Symbol
Parameter
Conditions
Master mode 2.7 V&lt;VDD&lt;3.6 V,
SPI1/4
fSCK
1/tc(SCK)
SPI clock frequency
th(SI)
24
Slave mode 2 V&lt;VDD&lt;3.6 V,
SPI1/2/3/4
18
Slave mode transmitter/full duplex
2.7 V&lt;VDD&lt;3.6 V, SPI1/4
22.5(2))
%
50
70
Slave mode, SPI presc = 2
4*Tpclk
-
-
NSS hold time
Slave mode, SPI presc = 2
2*Tpclk
-
-
SCK high and low time
Master mode
Tpclk-2
Tpclk
Tpclk+2
Master mode
3
-
-
Slave mode
3
-
-
Master mode
6.5
-
-
Slave mode
4.5
-
-
Data input hold time
MHz
16.5(2)
30
Data input setup time
Unit
Slave mode transmitter/full duplex
2 V&lt;VDD&lt;3.6 V, SPI1/2/3/4
th(NSS)
th(MI)
-
24
NSS setup time
tsu(SI)
-
Slave mode 2 V&lt;VDD&lt;3.6 V,
SPI1/4
tsu(NSS)
tsu(MI)
Max
18
Slave mode
tw(SCKH)
tw(SCKL)
Typ.
Master mode 2 V&lt;VDD&lt;3.6 V,
SPI1/2/3/4
Duty cycle of SPI clock
frequency
Duty(SCK)
Min
ta(SO)
Data output access time
Slave mode
10
-
30
tdis(SO)
Data output disable time
Slave mode
8
-
7
DocID026900 Rev 4
121/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 74. SPI characteristics(1) (continued)
Symbol
Parameter
tv(SO)
Conditions
Data output valid time
tv(MO)
th(SO)
Data output hold time
th(MO)
Min
Typ.
Max
Slave mode 2.7 V&lt;VDD&lt;3.6 V
-
15
22
Slave mode 2 V&lt;VDD&lt;3.6 V
-
15
30
Master mode
-
2
4.5
Slave mode
9
-
-
Master mode
0
-
-
Unit
1. Data based on characterization results, not tested in production.
2. The maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into
SCK low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a
master having tsu(MI) = 0 while Duty(SCK) = 50%.
Figure 42. SPI timing diagram - slave mode and CPHA = 0
166LQSXW
6&amp;.,QSXW
W68 166
&amp;3+$ &amp;32/ &amp;3+$ &amp;32/ WK 166
WF 6&amp;.
WZ 6&amp;.+
WZ 6&amp;./
W9 62
WD 62
0,62
287387
WK 62
06%287
%,7287
06%,1
%,7,1
WU 6&amp;.
WI 6&amp;.
WGLV 62
/6%287
WVX 6,
026,
,1387
/6%,1
WK 6,
DLF
122/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Figure 43. SPI timing diagram - slave mode and CPHA = 1(1)
166LQSXW
6&amp;.LQSXW
W68 166
&amp;3+$ &amp;32/ &amp;3+$ &amp;32/ WK 166
WF 6&amp;.
WZ 6&amp;.+
WZ 6&amp;./
WK 62
WY 62
WD 62
0,62
287387
06%287
%,7287
WGLV 62
/6%287
WK 6,
WVX 6,
026,
,1387
WU 6&amp;.
WI 6&amp;.
06%,1
%,7,1
/6%,1
DLE
1. Measurement points are done at 0.5VDD and with external CL = 30 pF.
Figure 44. SPI timing diagram - master mode(1)
+LJK
166LQSXW
6&amp;.2XWSXW
&amp;3+$ &amp;32/ 6&amp;.2XWSXW
WF 6&amp;.
&amp;3+$ &amp;32/ &amp;3+$ &amp;32/ &amp;3+$ &amp;32/ WVX 0,
0,62
,13 87
WZ 6&amp;.+
WZ 6&amp;./
06%,1
WU 6&amp;.
WI 6&amp;.
%,7,1
/6%,1
WK 0,
026,
287387
06%287
WY 02
% , 7287
/6%287
WK 02
DLF
1. Measurement points are done at 0.5VDD and with external CL = 30 pF.
DocID026900 Rev 4
123/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 75. I2S characteristics(1)
Symbol
fMCK
Parameter
Conditions
I2S Main clock output
Min
Max
Unit
256 x 8K
256xFs (2)
MHz
Master data: 32 bits
-
64xFs
MHz
Slave data: 32 bits
-
64xFs
-
30
70
%
-
fCK
I2S clock frequency
DCK
I2S clock frequency duty
Slave receiver
cycle
tv(WS)
WS valid time
Master mode
-
20
th(WS)
WS hold time
Master mode
2
-
tsu(WS)
WS setup time
Slave mode
0
-
th(WS)
WS hold time
Slave mode
4
-
Master receiver
1
-
Slave receiver
1
-
Master receiver
8
-
Slave receiver
2.5
-
Slave transmitter
(after enable edge)
-
50
tv(SD_MT)
Master transmitter
(after enable edge)
-
22
th(SD_ST)
Slave transmitter (after
enable edge)
8
-
Master transmitter
(after enable edge)
1
-
tsu(SD_MR)
tsu(SD_SR)
th(SD_MR)
th(SD_SR)
Data input setup time
Data input hold time
tv(SD_ST)
Data output valid time
Data output hold time
th(SD_MT)
ns
1. Data based on characterization results, not tested in production.
2. 256xFs maximum is 36 MHz (APB1 Maximum frequency)
Note:
124/168
Refer to the I2S section in RM0365 Reference Manual for more details about the sampling
frequency (Fs), fMCK, fCK, DCK values reflect only the digital peripheral behavior, source
clock precision might slightly change the values DCK depends mainly on ODD bit value.
Digital contribution leads to a min of (I2SDIV/(2*I2SDIV+ODD) and a max of
(I2SDIV+ODD)/(2*I2SDIV+ODD) and Fs max supported for each mode/condition.
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Figure 45. I2S slave timing diagram (Philips protocol)(1)
&amp;.,QSXW
WF &amp;.
&amp;32/ &amp;32/ WZ &amp;.+
WK :6
WZ &amp;./
:6LQSXW
WY 6'B67
WVX :6
6'WUDQVPLW
/6%WUDQVPLW 06%WUDQVPLW
WVX 6'B65
/6%UHFHLYH 6'UHFHLYH
WK 6'B67
%LWQWUDQVPLW
/6%WUDQVPLW
WK 6'B65
06%UHFHLYH
%LWQUHFHLYH
/6%UHFHLYH
DLE
1. Measurement points are done at 0.5VDD and with external CL=30 pF.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 46. I2S master timing diagram (Philips protocol)(1)
TF#+
TR#+
#+ OUTPUT
TC#+
#0/, TW#+(
#0/, TV73
TH73
TW#+,
73 OUTPUT
TV3$?-4
3$TRANSMIT
,3&quot; TRANSMIT
-3&quot; TRANSMIT
,3&quot; RECEIVE
,3&quot; TRANSMIT
TH3$?-2
TSU3$?-2
3$RECEIVE
&quot;ITN TRANSMIT
TH3$?-4
-3&quot; RECEIVE
&quot;ITN RECEIVE
,3&quot; RECEIVE
AIB
1. Measurement points are done at 0.5VDD and with external CL=30 pF.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
DocID026900 Rev 4
125/168
146
Electrical characteristics
STM32F302xD STM32F302xE
USB characteristics
Table 76. USB startup time
Symbol
Parameter
tSTARTUP(1)
Max
Unit
1
&micro;s
USB transceiver startup time
1. Guaranteed by design, not tested in production.
Table 77. USB DC electrical characteristics
Symbol
Conditions
Min.(1)
Max.(1)
Unit
-
3.0(3)
3.6
V
I(USB_DP, USB_DM)
0.2
-
Parameter
Input levels
VDD
USB operating voltage(2)
VDI(4)
Differential input sensitivity
VCM(4)
Differential common mode range
Includes VDI range
0.8
2.5
VSE(4)
Single ended receiver threshold
-
1.3
2.0
V
Output levels
VOL
Static output level low
RL of 1.5 kΩ to 3.6 V(5)
-
0.3
VOH
Static output level high
RL of 15 kΩ to VSS(5)
2.8
3.6
V
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full-speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 kΩ resistor to a 3.0-to-3.6 V voltage range.
3. The STM32F302xD/E USB functionality is ensured down to 2.7 V but not the full USB electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
4. Guaranteed by design, not tested in production.
5. RL is the load connected on the USB drivers.
Figure 47. USB timings: definition of data signal rise and fall time
&amp;URVVRYHU
SRLQWV
'LIIHUHQWLDO
GDWDOLQHV
9&amp;56
966
WI
WU
DLE
Table 78. USB: full-speed electrical characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
CL = 50 pF
4
-
20
ns
CL = 50 pF
4
-
20
ns
Driver characteristics
tr
tf
126/168
Rise time(2)
Fall
time(2)
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 78. USB: full-speed electrical characteristics(1) (continued)
Symbol
trfm
VCRS
Parameter
Conditions
Min
Typ
Max
Unit
tr/tf
90
-
110
%
-
1.3
-
2.0
V
driving high and low
28
40
44
Ω
Rise/ fall time matching
Output signal crossover voltage
Output driver
Z
Impedance(3) DRV
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed information, refer to USB Specification - Chapter 7
(version 2.0).
3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-), the matching impedance is
already included in the embedded driver.
CAN (controller area network) interface
Refer to Section 6.3.15: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).
6.3.19
ADC characteristics
Unless otherwise specified, the parameters given in Table 79 to Table 82 are guaranteed by
design, with conditions summarized in Table 19.
Table 79. ADC characteristics
Symbol
VDDA
IDDA
Parameter
Analog supply voltage for
ADC
Current on VDDA pin
(see Figure 48)
Conditions
Min
Typ
Max
Unit
-
2.0
-
3.6
V
Single-ended mode,
5 MSPS
-
907
1033
Single-ended mode,
1 MSPS
-
194
285.5
Single-ended mode,
200 KSPS
-
51.5
70
Differential mode,
5 MSPS
-
887.5
1009
Differential mode,
1 MSPS
-
212
285
Differential mode,
200 KSPS
-
51
69.5
DocID026900 Rev 4
&micro;A
127/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 79. ADC characteristics (continued)
Symbol
Conditions
Min
Typ
Max
Single-ended mode,
5 MSPS
-
104
139
Single-ended mode,
1 MSPS
-
20.4
37
Single-ended mode,
200 KSPS
-
3.3
11.3
Differential mode,
5 MSPS
-
174
235
Differential mode,
1 MSPS
-
34.6
52.6
Differential mode,
200 KSPS
-
6
13.6
Positive reference voltage
-
2
-
VDDA
V
ADC clock frequency
-
0.14
-
72
MHz
Resolution = 12 bits,
Fast Channel
0.01
-
5.14
Resolution = 10 bits,
Fast Channel
0.012
-
6
Resolution = 8 bits,
Fast Channel
0.014
-
7.2
Resolution = 6 bits,
Fast Channel
0.0175
-
9
fADC = 72 MHz
Resolution = 12 bits
-
-
5.14
MHz
Resolution = 12 bits
-
-
14
1/fADC
-
0
-
VREF+
V
Current on VREF+ pin
(see Figure 49)
IREF
VREF+
fADC
fS(1)
fTRIG
Parameter
(1)
VAIN
Sampling rate
External trigger frequency
Conversion voltage
range(2)
Unit
&micro;A
MSPS
RAIN(1)
External input impedance
-
-
-
100
kΩ
CADC(1)
Internal sample and hold
capacitor
-
-
5
-
pF
tSTAB(1)
Power-up time
-
0
0
1
&micro;s
tCAL(1)
Calibration time
tlatr(1)
Trigger conversion latency
Regular and injected
channels without conversion
abort
tlatrinj(1)
128/168
Trigger conversion latency
Injected channels aborting a
regular conversion
fADC = 72 MHz
1.56
&micro;s
-
112
1/fADC
CKMODE = 00
1.5
2
2.5
1/fADC
CKMODE = 01
-
-
2
1/fADC
CKMODE = 10
-
-
2.25
1/fADC
CKMODE = 11
-
-
2.125
1/fADC
CKMODE = 00
2.5
3
3.5
1/fADC
CKMODE = 01
-
-
3
1/fADC
CKMODE = 10
-
-
3.25
1/fADC
CKMODE = 11
-
-
3.125
1/fADC
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 79. ADC characteristics (continued)
Symbol
tS(1)
Parameter
Sampling time
Conditions
Min
Typ
Max
Unit
fADC = 72 MHz
0.021
-
8.35
&micro;s
-
1.5
-
601.5
1/fADC
-
-
-
10
&micro;s
fADC = 72 MHz
Resolution = 12 bits
0.19
-
8.52
&micro;s
TADCVREG ADC Voltage Regulator
(1)
Start-up time
_STUP
tCONV(1)
CMIR
Total conversion time
(including sampling time)
Common Mode Input signal
range
Resolution = 12 bits
ADC differential mode
14 to 614 (tS for sampling + 12.5
for
successive approximation)
(VSSA +
VREF+)/2
– 0.18
(VSSA +
VREF+)/2
1/fADC
(VSSA +
VREF+)/2
+ 0.18
V
1. Data guaranteed by design, not tested in Production.
2. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.
Refer to Section 4: Pinout and pin description for further details.
Figure 48. ADC typical current consumption on VDDA pin
$'&amp;FXUUHQWFRQVXPSWLRQ $
6LQJOHHQGHGPRGH
'LIIHUHQWLDOPRGH
&amp;ORFNIUHTXHQF\ 0636
DocID026900 Rev 4
069
129/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Figure 49. ADC typical current consumption on VREF+ pin
$'&amp;FXUUHQWFRQVXPSWLRQ $
6LQJOHHQGHGPRGH
'LIIHUHQWLDOPRGH
&amp;ORFNIUHTXHQF\ 0636
069
Table 80. Maximum ADC RAIN (1)
Resolution
12 bits
10 bits
130/168
RAIN max (kΩ)
Sampling
cycle @
72 MHz
Sampling
time [ns] @
72 MHz
Fast channels(2)
Slow
channels
Other
channels(3)
1.5
20.83
0.018
NA
NA
2.5
34.72
0.150
NA
0.022
4.5
62.50
0.470
0.220
0.180
7.5
104.17
0.820
0.560
0.470
19.5
270.83
2.70
1.80
1.50
61.5
854.17
8.20
6.80
4.70
181.5
2520.83
22.0
18.0
15.0
601.5
8354.17
82.0
68.0
47.0
1.5
20.83
0.082
NA
NA
2.5
34.72
0.270
0.082
0.100
4.5
62.50
0.560
0.390
0.330
7.5
104.17
1.20
0.82
0.68
19.5
270.83
3.30
2.70
2.20
61.5
854.17
10.0
8.2
6.8
181.5
2520.83
33.0
27.0
22.0
601.5
8354.17
100.0
82.0
68.0
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 80. Maximum ADC RAIN (1) (continued)
Resolution
8 bits
6 bits
RAIN max (kΩ)
Sampling
cycle @
72 MHz
Sampling
time [ns] @
72 MHz
Fast channels(2)
Slow
channels
Other
channels(3)
1.5
20.83
0.150
NA
0.039
2.5
34.72
0.390
0.180
0.180
4.5
62.50
0.820
0.560
0.470
7.5
104.17
1.50
1.20
1.00
19.5
270.83
3.90
3.30
2.70
61.5
854.17
12.00
12.00
8.20
181.5
2520.83
39.00
33.00
27.00
601.5
8354.17
100.00
100.00
82.00
1.5
20.83
0.270
0.100
0.150
2.5
34.72
0.560
0.390
0.330
4.5
62.50
1.200
0.820
0.820
7.5
104.17
2.20
1.80
1.50
19.5
270.83
5.60
4.70
3.90
61.5
854.17
18.0
15.0
12.0
181.5
2520.83
56.0
47.0
39.0
601.5
8354.17
100.00
100.0
100.0
1. Data based on characterization results, not tested in production.
2. All fast channels, expect channels on PA2, PA6.
3. Fast channels available on PA2, PA6.
DocID026900 Rev 4
131/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 81. ADC accuracy - limited test conditions, 100-/144-pin packages (1)(2)
Symbol
Parameter
ET
Total
unadjusted
error
Single ended
Differential
Single ended
EO
Offset error
Differential
Single ended
EG
Gain error
Differential
ED
EL
Differential
linearity
error
Integral
linearity
error
Effective
ENOB(4) number of
bits
Signal-tonoise and
(4)
SINAD
distortion
ratio
132/168
Min
Conditions
ADC clock freq. ≤ 72 MHz
Sampling freq. ≤ 5 Msps
VDDA = VREF+ = 3.3 V
25&deg;C
100-pin/144-pin package
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
Differential
DocID026900 Rev 4
(3)
Typ
Max
(3)
Unit
&plusmn;3.5 &plusmn;4.5
Fast channel 5.1 Ms
-
Slow channel 4.8 Ms
-
&plusmn;4
&plusmn;4.5
Fast channel 5.1 Ms
-
&plusmn;3
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;2.5
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1.5
Fast channel 5.1 Ms
-
&plusmn;3
&plusmn;4
Slow channel 4.8 Ms
-
&plusmn;3.5
&plusmn;4
Fast channel 5.1 Ms
-
&plusmn;1.5 &plusmn;2.5
Slow channel 4.8 Ms
-
&plusmn;2
&plusmn;2.5
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1.5
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1
Fast channel 5.1 Ms
-
&plusmn;1.5
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;1.5
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1.5
Fast channel 5.1 Ms
10.7 10.8
-
Slow channel 4.8 Ms
10.7 10.8
-
Fast channel 5.1 Ms
11.2 11.3
-
Slow channel 4.8 Ms
11.1 11.3
-
Fast channel 5.1 Ms
66
67
-
Slow channel 4.8 Ms
66
67
-
Fast channel 5.1 Ms
69
70
-
Slow channel 4.8 Ms
69
70
-
LSB
bits
dB
STM32F302xD STM32F302xE
Electrical characteristics
Table 81. ADC accuracy - limited test conditions, 100-/144-pin packages (1)(2) (continued)
Symbol
Parameter
Single ended
SNR(4)
THD(4)
Signal-tonoise ratio
Total
harmonic
distortion
Min
Conditions
ADC clock freq. ≤ 72 MHz
Sampling freq ≤ 5 Msps
VDDA = VREF+ = 3.3 V
25&deg;C
100-pin/144-pin package
Differential
Single ended
Differential
Max
(3)
Typ
Fast channel 5.1 Ms
66
67
-
Slow channel 4.8 Ms
66
67
-
Fast channel 5.1 Ms
69
70
-
Slow channel 4.8 Ms
69
70
-
Fast channel 5.1 Ms
-
-76
-76
Slow channel 4.8 Ms
-
-76
-76
Fast channel 5.1 Ms
-
-80
-80
Slow channel 4.8 Ms
-
-80
-80
(3)
Unit
dB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.
4. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.
Table 82. ADC accuracy, 100-pin/144-pin packages(1)(2)(3)
Symbol Parameter
ET
Single
Ended
Total
unadjusted
error
Differential
Single
Ended
EO
Offset error
ADC clock freq. ≤ 72 MHz,
Sampling freq. ≤ 5 Msps
2.0 V ≤ VDDA, VREF+ ≤ 3.6 V
100-pin/144-pin package
EG
Differential
Single
Ended
Gain error
Differential
ED
Differential
linearity
error
Min (4)
Max(4)
Fast channel 5.1 Ms
-
&plusmn;6.5
Slow channel 4.8 Ms
-
&plusmn;6.5
Fast channel 5.1 Ms
-
&plusmn;4
Slow channel 4.8 Ms
-
&plusmn;4
Fast channel 5.1 Ms
-
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;2
Fast channel 5.1 Ms
-
&plusmn;6
Slow channel 4.8 Ms
-
&plusmn;6
Fast channel 5.1 Ms
-
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1.5
Fast channel 5.1 Ms
-
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1.5
Conditions
Single
Ended
Differential
DocID026900 Rev 4
Unit
LSB
133/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 82. ADC accuracy, 100-pin/144-pin packages(1)(2)(3) (continued)
Symbol Parameter
EL
ENOB
(5)
SNR(5)
Single
Ended
Integral
linearity
error
Differential
Single
Ended
Effective
number of
bits
Signal-toSINAD noise and
(5)
distortion
ratio
Signal-tonoise ratio
Differential
ADC clock freq. ≤ 72 MHz,
Sampling freq. ≤ 5 Msps,
2.0 V≤ VDDA, VREF+ ≤ 3.6 V
100-pin/144-pin package
Single
Ended
Differential
Single
Ended
Differential
THD(5)
Total
harmonic
distortion
Min (4)
Max(4)
Fast channel 5.1 Ms
-
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;2
Fast channel 5.1 Ms
10.4
-
Slow channel 4.8 Ms
10.2
-
Fast channel 5.1 Ms
10.8
-
Slow channel 4.8 Ms
10.8
-
Fast channel 5.1 Ms
64
-
Slow channel 4.8 Ms
63
-
Fast channel 5.1 Ms
67
-
Slow channel 4.8 Ms
67
-
Fast channel 5.1 Ms
64
-
Slow channel 4.8 Ms
64
-
Fast channel 5.1 Ms
67
-
Slow channel 4.8 Ms
67
-
Fast channel 5.1 Ms
-
74
Slow channel 4.8 Ms
-
-74
Fast channel 5.1 Ms
-
-78
Slow channel 4.8 Ms
-
-76
Conditions
Single
Ended
Differential
Unit
LSB
bits
dB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. Data based on characterization results, not tested in production.
5. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.
134/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
Table 83. ADC accuracy - limited test conditions, 64-pin packages(1)(2)
Symbol Parameter
ET
Single ended
Total
unadjusted
error
Differential
Single ended
EO
Offset error
Differential
Single ended
EG
Gain error
Differential
ED
EL
ENOB
(4)
SINAD
(4)
Differential
linearity
error
Integral
linearity
error
Effective
number of
bits
Signal-tonoise and
distortion
ratio
Min
Conditions
ADC clock freq. ≤ 72 MHz
Sampling freq. ≤ 5 Msps
VDDA = 3.3 V
25&deg;C
64-pin package
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
Differential
DocID026900 Rev 4
Max
(3)
Typ
Fast channel 5.1 Ms
-
&plusmn;4
&plusmn;4.5
Slow channel 4.8 Ms
-
&plusmn;5.5
&plusmn;6
Fast channel 5.1 Ms
-
&plusmn;3.5
&plusmn;4
Slow channel 4.8 Ms
-
&plusmn;3.5
&plusmn;4
Fast channel 5.1 Ms
-
&plusmn;2
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;1.5
&plusmn;2
Fast channel 5.1 Ms
-
&plusmn;1.5
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;1.5
&plusmn;2
Fast channel 5.1 Ms
-
&plusmn;3
&plusmn;4
Slow channel 4.8 Ms
-
&plusmn;5
&plusmn;5.5
Fast channel 5.1 Ms
-
&plusmn;3
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3
&plusmn;3.5
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1
Fast channel 5.1 Ms
-
&plusmn;1
&plusmn;1
Slow channel 4.8 Ms
-
&plusmn;1
&plusmn;1
Fast channel 5.1 Ms
-
&plusmn;1.5
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;2
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;1.5 &plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1.5
(3)
Unit
LSB
&plusmn;2
Fast channel 5.1 Ms
10.8 10.8
-
Slow channel 4.8 Ms
10.8 10.8
-
Fast channel 5.1 Ms
11.2 11.3
-
Slow channel 4.8 Ms
11.2 11.3
-
Fast channel 5.1 Ms
66
67
-
Slow channel 4.8 Ms
66
67
-
Fast channel 5.1 Ms
69
70
-
Slow channel 4.8 Ms
69
70
-
bit
dB
135/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 83. ADC accuracy - limited test conditions, 64-pin packages(1)(2) (continued)
Symbol Parameter
Min
Conditions
Single ended
SNR(4)
THD(4)
Signal-tonoise ratio
Total
harmonic
distortion
ADC clock freq. ≤ 72 MHz
Sampling freq ≤ 5 Msps
VDDA = 3.3 V
25&deg;C
64-pin package
Differential
Single ended
Differential
Max
(3)
Typ
Fast channel 5.1 Ms
66
67
-
Slow channel 4.8 Ms
66
67
-
Fast channel 5.1 Ms
69
70
-
Slow channel 4.8 Ms
69
70
-
Fast channel 5.1 Ms
-
-80
-80
Slow channel 4.8 Ms
-
-78
-77
Fast channel 5.1 Ms
-
-83
-82
Slow channel 4.8 Ms
-
-81
-80
(3)
Unit
dB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.
4. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.
Table 84. ADC accuracy, 64-pin packages(1)(2)(3)
Symbol Parameter
ET
Single ended
Total
unadjusted
error
Differential
Single ended
EO
Offset error
ADC clock freq. ≤ 72 MHz,
Sampling freq. ≤ 5 Msps
2.0 V ≤ VDDA ≤ 3.6 V
64-pin package
EG
Differential
Single ended
Gain error
Differential
ED
136/168
Differential
linearity
error
Min(4)
Max
Fast channel 5.1 Ms
-
&plusmn;6.5
Slow channel 4.8 Ms
-
&plusmn;6.5
Fast channel 5.1 Ms
-
&plusmn;4
Slow channel 4.8 Ms
-
&plusmn;4.5
Fast channel 5.1 Ms
-
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3
Fast channel 5.1 Ms
-
&plusmn;2.5
Slow channel 4.8 Ms
-
&plusmn;2.5
Fast channel 5.1 Ms
-
&plusmn;6
Slow channel 4.8 Ms
-
&plusmn;6
Fast channel 5.1 Ms
-
&plusmn;3.5
Slow channel 4.8 Ms
-
&plusmn;4
Fast channel 5.1 Ms
-
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1.5
Fast channel 5.1 Ms
-
&plusmn;1.5
Slow channel 4.8 Ms
-
&plusmn;1.5
Conditions
Single ended
Differential
DocID026900 Rev 4
(4)
Unit
LSB
STM32F302xD STM32F302xE
Electrical characteristics
Table 84. ADC accuracy, 64-pin packages(1)(2)(3) (continued)
Symbol Parameter
EL
ENOB
(5)
SINAD
(5)
Single ended
Integral
linearity
error
Differential
Single ended
Effective
number of
bits
Signal-tonoise and
distortion
ratio
Differential
ADC clock freq. ≤ 72 MHz,
Sampling freq ≤ 5 Msps,
2.0 V ≤ VDDA ≤ 3.6 V
64-pin package
Single ended
Differential
Single ended
SNR(5)
Signal-tonoise ratio
Differential
THD(5)
Total
harmonic
distortion
Min(4)
Max
Fast channel 5.1 Ms
-
&plusmn;3
Slow channel 4.8 Ms
-
&plusmn;3.5
Fast channel 5.1 Ms
-
&plusmn;2
Slow channel 4.8 Ms
-
&plusmn;2.5
Fast channel 5.1 Ms
10.4
-
Slow channel 4.8 Ms
10.4
-
Fast channel 5.1 Ms
10.8
-
Slow channel 4.8 Ms
10.8
-
Fast channel 5.1 Ms
64
-
Slow channel 4.8 Ms
63
-
Fast channel 5.1 Ms
67
-
Slow channel 4.8 Ms
67
-
Fast channel 5.1 Ms
64
-
Slow channel 4.8 Ms
64
-
Fast channel 5.1 Ms
67
-
Slow channel 4.8 Ms
67
-
Fast channel 5.1 Ms
-
-75
Slow channel 4.8 Ms
-
-75
Fast channel 5.1 Ms
-
-79
Slow channel 4.8 Ms
-
-78
Conditions
Single ended
Differential
(4)
Unit
LSB
bits
dB
dB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.15 does not affect the ADC
accuracy.
3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges.
4. Data based on characterization results, not tested in production.
5. Value measured with a -0.5 dB full scale 50 kHz sine wave input signal.
DocID026900 Rev 4
137/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 85. ADC accuracy at 1MSPS(1)(2)
Symbol
Parameter
Typ
Max(3)
Fast channel
&plusmn;2.5
&plusmn;5
Slow channel
&plusmn;3.5
&plusmn;5
Fast channel
&plusmn;1
&plusmn;2.5
&plusmn;1.5
&plusmn;2.5
&plusmn;2
&plusmn;3
Test conditions
ET
Total unadjusted error
EO
Offset error
EG
Gain error
ED
Differential linearity error
EL
Integral linearity error
Slow channel
ADC Freq ≤ 72 MHz
Fast channel
Sampling Freq ≤ 1MSPS
2.4 V ≤ VDDA = VREF+ ≤ 3.6 V Slow channel
Single-ended mode
Fast channel
&plusmn;3
&plusmn;4
&plusmn;0.7
&plusmn;2
Slow channel
&plusmn;0.7
&plusmn;2
Fast channel
&plusmn;1
&plusmn;3
Slow channel
&plusmn;1.2
&plusmn;3
Unit
LSB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current. Any positive injection current
within the limits specified for IINJ(PIN) and ∑IINJ(PIN) in Section 6.3.15: I/O port characteristics does not affect the ADC
accuracy.
3. Data based on characterization results, not tested in production.
Figure 50. ADC accuracy characteristics
;,3&quot; )$%!, 6 2%&amp;
OR
6 $$!
DEPENDING ON PACKAGE =
%'
%4
%/
%,
%$
, 3&quot; )$%!,
6 33!
138/168
DocID026900 Rev 4
6 $$!
AIC
STM32F302xD STM32F302xE
Electrical characteristics
Figure 51. Typical connection diagram using the ADC
9''
6DPSOHDQGKROG$'&amp;
FRQYHUWHU
97
9
5$,1
9$,1
5$'&amp;
$,1[
&amp;SDUDVLWLF
ELW
FRQYHUWHU
,/$
97
9
&amp;$'&amp;
069
1. Refer to Table 79 for the values of RAIN.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 12. The 10 nF capacitor
should be ceramic (good quality) and it should be placed as close as possible to the chip.
6.3.20
DAC electrical specifications
Table 86. DAC characteristics
Symbol
VDDA
RLOAD
(1)
RL
RO(1)
CLOAD(1)
VDAC_OUT (1)
Parameter
Conditions
Min
Typ
Max
Unit
-
2.4
-
3.6
V
DAC output buffer ON
5
-
-
kΩ
Dac output buffer ON:
connected to VSSA
5
-
-
kΩ
Dac output buffer ON:
connected to VDDA
25
-
-
kΩ
Output impedance
DAC output buffer OFF
-
-
15
kΩ
Capacitive load
DAC output buffer ON
-
-
50
pF
0.2
-
VDDA – 0.2
V
-
0.5
VDDA - 1LSB
mV
Analog supply voltage
Resistive load
Resistive load
Voltage on DAC_OUT
output
Corresponds to 12-bit input
code (0x0E0) to (0xF1C) at
VDDA = 3.6 V
and (0x155) and (0xEAB) at
VDDA = 2.4 V DAC output
buffer ON.
DAC output buffer OFF
DocID026900 Rev 4
139/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 86. DAC characteristics (continued)
Symbol
Parameter
IREF
DAC DC current
consumption in quiescent
mode (Standby mode)
IDDA(3)
DAC DC current
consumption in quiescent
mode (Standby mode)(2)
Conditions
Min
Typ
Max
Unit
With no load, worst code
(0xF1C) on the input
-
-
220
&micro;A
With no load, middle code
(0x800) on the input.
-
-
380
&micro;A
With no load, worst code
(0xF1C) on the input.
-
-
480
&micro;A
Given for a 10-bit input code
-
-
&plusmn;0.5
LSB
DNL(3)
Differential non linearity
Difference between two
consecutive code-1LSB)
Given for a 12-bit input code
-
-
&plusmn;2
LSB
-
-
&plusmn;1
LSB
INL(3)
Integral non linearity
Given for a 10-bit input code
(difference between
measured value at Code i
and the value at Code i on a Given for a 12-bit input code
line drawn between Code 0
and last Code 4095)
-
-
&plusmn;4
LSB
-
-
&plusmn;10
mV
Offset(3)
Offset error (difference
Given for a 10-bit input code
between measured value at
at VDDA = 3.6 V
Code (0x800) and the ideal
value = VDDA/2)
Given for a 12-bit input code
at VDDA = 3.6 V
-
-
&plusmn;3
LSB
-
-
&plusmn;12
LSB
Gain error(3)
Gain error
-
-
&plusmn;0.5
%
tSETTLING(3)
Settling time (full scale: for a
12-bit input code transition
between the lowest and the CLOAD ≤50 pF,
highest input codes when
RLOAD ≥ 5 kΩ
DAC_OUT reaches final
value &plusmn;1LSB
-
3
4
&micro;s
Given for a 12-bit input code
Power-up time
tSTAB
-
conver
sion
cycle
1
Max frequency for a correct
CLOAD ≤50 pF,
DAC_OUT change when
small variation in the input RLOAD ≥ 5 kΩ
code (from code i to i+1LSB)
-
-
1
MS/s
tWAKEUP(3)
Wakeup time from off state
(Setting the ENx bit in the
DAC Control register)
-
6.5
10
&micro;s
PSRR+ (1)
Power supply rejection ratio C
LOAD = 50 pF,
(to VDDA) (static DC
No RLOAD ≥ 5 kΩ,
measurement
-
–67
–40
dB
100
-
-
&micro;A
(3)
Update rate
Iskink(1)
Output sink current
CLOAD ≤50 pF,
RLOAD ≥ 5 kΩ
DAC buffer ON
Output level higher
than 0.2 V
1. Guaranteed by design, not tested in production.
140/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Electrical characteristics
2. Quiescent mode refers to the state of the DAC a keeping steady value on the output, so no dynamic consumption is
involved.
3. Data based on characterization results, not tested in production.
Figure 52. 12-bit buffered /non-buffered DAC
%XIIHUHGQRQEXIIHUHG'$&amp;
%XIIHU
5/2$'
ELW
GLJLWDOWR
DQDORJ
FRQYHUWHU
'$&amp;[B287
&amp;/2$'
DLG
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.
6.3.21
Comparator characteristics
Table 87. Comparator characteristics(1)
Symbol
Conditions
Min.
Typ.
Max.
Analog supply voltage
-
2
-
3.6
VIN
Comparator input voltage
range
-
0
-
VDDA
VBG
Scaler input voltage
-
-
VREFINIT
-
VSC
Scaler offset voltage
-
-
&plusmn;5
&plusmn;10
mV
tS_SC
Scaler startup time from
power down
-
-
-
0.2
ms
tSTART
Comparator startup time
VDDA ≥ 2.7 V
-
-
4
VDDA &lt; 2.7 V
-
-
10
Propagation delay for
200 mV step with 100 mV
overdrive
VDDA ≥ 2.7 V
-
25
28
-
28
30
Propagation delay for full
range step with 100 mV
overdrive
VDDA ≥ 2.7 V
-
32
35
-
35
40
-
&plusmn;5
&plusmn;10
-
-
&plusmn;25
VDDA
Parameter
V
&micro;s
ns
tD
VOFFSET
VDDA &lt; 2.7 V
Unit
Comparator offset error
VDDA &lt; 2.7 V
VDDA ≥ 2.7 V
VDDA &lt; 2.7 V
DocID026900 Rev 4
mV
141/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 87. Comparator characteristics(1) (continued)
Symbol
TVOFFSET
IDDA
Parameter
Total offset variation
Conditions
Full temperature range
COMP current
consumption
-
1. Guaranteed by design, not tested in production.
142/168
DocID026900 Rev 4
Min.
Typ.
Max.
Unit
-
-
3
mV
-
400
600
&micro;A
STM32F302xD STM32F302xE
6.3.22
Electrical characteristics
Operational amplifier characteristics
Table 88. Operational amplifier characteristics(1)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VDDA
Analog supply voltage
-
2.4
-
3.6
V
CMIR
Common mode input range
-
0
-
VDDA
V
25&deg;C, No Load
on output.
-
-
4
All
voltage/Temp.
-
-
6
25&deg;C, No Load
on output.
-
-
1.6
All
voltage/Temp.
-
-
3
Maximum
calibration
range
VIOFFSET
Input offset
voltage
After offset
calibration
ΔVIOFFSET
mV
Input offset voltage drift
-
-
5
-
&micro;V/&deg;C
ILOAD
Drive current
-
-
-
500
&micro;A
IDDA
OPAMP consumption
No load,
quiescent mode
-
690
1450
&micro;A
ADC sampling time when reading
the OPAMP output.
-
400
-
-
ns
CMRR
Common mode rejection ratio
-
-
90
-
dB
PSRR
Power supply rejection ratio
73
117
-
dB
GBW
Bandwidth
-
-
8.2
-
MHz
SR
Slew rate
-
-
4.7
-
V/&micro;s
RLOAD
Resistive load
-
4
-
-
kΩ
CLOAD
Capacitive load
-
-
-
50
pF
Rload = min,
Input at VDDA.
VDDA-100
-
-
Rload = 20K,
Input at VDDA.
VDDA-20
-
-
TS_OPAMP_VOUT
VOHSAT
VOLSAT
ϕm
tOFFTRIM
tWAKEUP
High saturation voltage(2)
Low saturation voltage(2)
DC
mV
Rload = min,
input at 0V
-
-
100
Rload = 20K,
input at 0V.
-
-
20
Phase margin
-
-
62
-
&deg;
Offset trim time: during calibration,
minimum time needed between
two steps to have 1 mV accuracy
-
-
-
2
ms
-
2.8
5
&micro;s
Wake up time from OFF state.
CLOAD ≤50 pf,
RLOAD ≥ 4 kΩ,
Follower
configuration
DocID026900 Rev 4
143/168
146
Electrical characteristics
STM32F302xD STM32F302xE
Table 88. Operational amplifier characteristics(1) (continued)
Symbol
PGA gain
Rnetwork
Parameter
Condition
Min
Typ
Max
Unit
-
2
-
-
-
4
-
-
-
8
-
-
-
16
-
-
Gain=2
-
5.4/5.4
-
R2/R1 internal resistance values in Gain=4
PGA mode (3)
Gain=8
-
16.2/5.4
-
-
37.8/5.4
-
-
40.5/2.7
-
Non inverting gain value
-
Gain=16
PGA gain error
Ibias
PGA BW
en
PGA gain error
-
-1%
-
1%
-
OPAMP input bias current
-
-
-
&plusmn;0.2(4)
&micro;A
PGA Gain = 2,
Cload = 50pF,
Rload = 4 KΩ
-
4
-
PGA Gain = 4,
Cload = 50pF,
Rload = 4 KΩ
-
2
-
PGA Gain = 8,
Cload = 50pF,
Rload = 4 KΩ
-
1
-
PGA Gain = 16,
Cload = 50pF,
Rload = 4 KΩ
-
0.5
-
@ 1KHz, Output
loaded with
4 KΩ
-
109
-
PGA bandwidth for different non
inverting gain
Voltage noise density
@ 10KHz,
Output loaded
with 4 KΩ
1. Guaranteed by design, not tested in production.
2. The saturation voltage can be also limited by the Iload (drive current).
3. R2 is the internal resistance between OPAMP output and OPAMP inverting input.
R1 is the internal resistance between OPAMP inverting input and ground.
The PGA gain =1+R2/R1
4. Mostly TTa I/O leakage, when used in analog mode.
144/168
kΩ
DocID026900 Rev 4
MHz
-
43
-
nV
----------Hz
STM32F302xD STM32F302xE
Electrical characteristics
Figure 53. OPAMP voltage noise versus frequency
6.3.23
Temperature sensor characteristics
Table 89. TS characteristics
Symbol
TL(1)
Avg_Slope(1)
V25
tSTART(1)
TS_temp(1)(2)
Parameter
Min
Typ
Max
Unit
-
&plusmn;1
&plusmn;2
&deg;C
Average slope
4.0
4.3
4.6
mV/&deg;C
Voltage at 25 &deg;C
1.34
1.43
1.52
V
4
-
10
&micro;s
2.2
-
-
&micro;s
VSENSE linearity with temperature
Startup time
ADC sampling time when reading the
temperature
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 90. Temperature sensor calibration values
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at
temperature of 30 &deg;C,
VDDA= 3.3 V
0x1FFF F7B8 - 0x1FFF F7B9
TS_CAL2
TS ADC raw data acquired at
temperature of 110 &deg;C
VDDA= 3.3 V
0x1FFF F7C2 - 0x1FFF F7C3
DocID026900 Rev 4
145/168
146
Electrical characteristics
6.3.24
STM32F302xD STM32F302xE
VBAT monitoring characteristics
Table 91. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-
50
-
KΩ
Q
Ratio on VBAT measurement
-
2
-
-
Error on Q
-1
-
+1
%
ADC sampling time when reading the VBAT
1mV accuracy
2.2
-
-
&micro;s
Er
(1)
TS_vbat(1)(2)
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
146/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
7
Package information
7.1
Package mechanical data
To meet environmental requirements, ST offers these devices in different grades of
ECOPACK&reg; packages, depending on their level of environmental compliance. ECOPACK&reg;
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK&reg; is an ST trademark.
LQFP144 package information
LQFP144 is a 144-pin, 20 x 20 mm low-profile quad flat package.
Figure 54. LQFP144 package outline
C
!
!
3%!4).'
0,!.%
#
!
MM
CCC #
$
,
$
+
!
'!5'% 0,!.%
,
$
%
%
%
B
7.2
0). )$%.4)&amp;)#!4)/.
E
!?-%?6
1. Drawing is not to scale.
DocID026900 Rev 4
147/168
166
Package information
STM32F302xD STM32F302xE
Table 92. LQFP144 mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
A
-
-
1.600
-
-
0.0630
A1
0.050
-
0.150
0.0020
-
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
c
0.090
-
0.200
0.0035
-
0.0079
D
21.800
22.000
22.200
0.8583
0.8661
0.8740
D1
19.800
20.000
20.200
0.7795
0.7874
0.7953
D3
-
17.500
-
-
0.6890
-
E
21.800
22.000
22.200
0.8583
0.8661
0.8740
E1
19.800
20.000
20.200
0.7795
0.7874
0.7953
E3
-
17.500
-
-
0.6890
-
e
-
0.500
-
-
0.0197
-
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
k
0&deg;
3.5&deg;
7&deg;
0&deg;
3.5&deg;
7&deg;
ccc
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
148/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Figure 55. Recommended footprint for the LQFP144 package
DLH
1. Drawing is not to scale.
2. Dimensions are expressed in millimeters.
DocID026900 Rev 4
149/168
166
Package information
STM32F302xD STM32F302xE
Device marking for LQFP144
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
Figure 56. LQFP144 marking example (package top view)
5HYLVLRQFRGH
3URGXFWLGHQWLILFDWLRQ
5
670)
=(7
'DWHFRGH
&lt; ::
3LQLGHQWLILFDWLRQ
D^ǀϯϱϱϳϬsϮ
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
150/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
7.3
Package information
UFBGA100 package information
UFBGA100 is a 100-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.
Figure 57. UFBGA100 package outline
= 6HDWLQJSODQH
GGG =
$ $ $
$ $
(
H
$EDOO
$EDOO
LGHQWLILHU LQGH[DUHD
)
;
(
$
)
'
'
H
&lt;
0
%277209,(:
E EDOOV
 HHH 0 = &lt; ;
 III 0 =
7239,(:
$&amp;B0(B9
1. Drawing is not to scale.
Table 93. UFBGA100 package mechanical data
inches(1)
millimeters
Symbol
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.460
0.530
0.600
0.0181
0.0209
0.0236
A1
0.050
0.080
0.110
0.0020
0.0031
0.0043
A2
0.400
0.450
0.500
0.0157
0.0177
0.0197
A3
-
0.130
-
-
0.0051
-
A4
0.270
0.320
0.370
0.0106
0.0126
0.0146
b
0.200
0.250
0.300
0.0079
0.0098
0.0118
D
6.950
7.000
7.050
0.2736
0.2756
0.2776
D1
5.450
5.500
5.550
0.2146
0.2165
0.2185
E
6.950
7.000
7.050
0.2736
0.2756
0.2776
E1
5.450
5.500
5.550
0.2146
0.2165
0.2185
e
-
0.500
-
-
0.0197
-
F
0.700
0.750
0.800
0.0276
0.0295
0.0315
DocID026900 Rev 4
151/168
166
Package information
STM32F302xD STM32F302xE
Table 93. UFBGA100 package mechanical data (continued)
inches(1)
millimeters
Symbol
Min.
Typ.
Max.
Min.
Typ.
Max.
ddd
-
-
0.100
-
-
0.0039
eee
-
-
0.150
-
-
0.0059
fff
-
-
0.050
-
-
0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 58. Recommended footprint for the UFBGA100 package
'SDG
'VP
069
Table 94. UFBGA100 recommended PCB design rules (0.5 mm pitch BGA)
Dimension
Recommended values
Pitch
0.5
Dpad
0.27 mm
Dsm
0.35 mm typ. (depends on the soldermask
registration tolerance)
Solder paste
0.27 mm aperture diameter.
Note:
Non-solder mask defined (NSMD) pads are recommended.
Note:
4 to 6 mils solder paste screen printing process.
152/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Device marking for UFBGA100
The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
Figure 59. UFBGA100 marking example (package top view)
3URGXFW
LGHQWLILFDWLRQ
45.'
7&amp;)
'DWHFRGH
: 88
6WDQGDUG67ORJR
5HYLVLRQFRGH
%DOOLGHQWLILHU
3
069
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
DocID026900 Rev 4
153/168
166
Package information
7.4
STM32F302xD STM32F302xE
LQFP100 package information
LQFP100 is a 100-pin, 14 x 14 mm low-profile quad flat package.
Figure 60. LQFP100 package outline
MM
C
!
!
!
3%!4).' 0,!.%
#
'!5'% 0,!.%
$
!
+
CCC #
,
$
,
$
0). )$%.4)&amp;)#!4)/.
%
%
%
B
E
,?-%?6
1. Drawing is not to scale.
Table 95. LQPF100 package mechanical data
inches(1)
millimeters
Symbol
154/168
Min
Typ
Max
Min
Typ
Max
A
-
-
1.600
-
-
0.0630
A1
0.050
-
0.150
0.0020
-
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
c
0.090
-
0.200
0.0035
-
0.0079
D
15.800
16.000
16.200
0.6220
0.6299
0.6378
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Table 95. LQPF100 package mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
D1
13.800
14.000
14.200
0.5433
0.5512
0.5591
D3
-
12.000
-
-
0.4724
-
E
15.800
16.000
16.200
0.6220
0.6299
0.6378
E1
13.800
14.000
14.200
0.5433
0.5512
0.5591
E3
-
12.000
-
-
0.4724
-
e
-
0.500
-
-
0.0197
-
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
k
0.0&deg;
3.5&deg;
7.0&deg;
0.0&deg;
3.5&deg;
7.0&deg;
ccc
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 61. Recommended footprint for the LQFP100 package
AIC
1. Drawing is not to scale.
2. Dimensions are expressed in millimeters.
DocID026900 Rev 4
155/168
166
Package information
STM32F302xD STM32F302xE
Device marking for LQFP100
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
Figure 62. LQFP100 marking example (package top view)
3URGXFWLGHQWLILFDWLRQ 670)
9(7
5HYLVLRQFRGH
5
'DWHFRGH
&lt; ::
3LQLGHQWLILFDWLRQ
06Y9
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
156/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
7.5
Package information
WLCSP100 package information
WLCSP100 is a 100-ball, 4.775 x 5.041 mm, 0.4 mm pitch wafer level chip scale package.
Figure 63.WLCSP100 package outline
$%$///2&amp;$7,21
$
'(7$,/$
.
%277209,(:
6,'(9,(:
)52179,(:
'(7$,/$
527$7('
$25,(17$7,21
5()(5(1&amp;(
DDD
;
7239,(:
:$)(5%$&amp;.6,'(
:/&amp;63B$5B0(B9
1. Drawing is not to scale.
DocID026900 Rev 4
157/168
166
Package information
STM32F302xD STM32F302xE
Table 96. WLCSP100 package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Typ
Min
Max
A
0.525
0.555
0.585
0.0207
0.0219
0.0230
A1
-
0.175
-
-
0.0069
-
A2
-
0.38
-
-
0.0150
-
(2)
-
0.025
-
-
0.0010
-
(3)
&Oslash;b
0.22
0.25
0.28
-
0.0098
0.0110
D
4.74
4.775
4.81
-
0.1880
0.1894
E
5.006
5.041
5.076
-
0.1985
0.1998
e
-
0.4
-
-
0.0157
-
e1
-
3.6
-
-
0.1417
-
e2
-
3.6
-
-
0.1417
-
F
-
0.5875
-
-
0.0231
-
G
-
0.7205
-
-
0.0284
-
N
-
100
-
-
3.9370
-
aaa
-
0.1
-
-
0.0039
-
bbb
-
0.1
-
-
0.0039
-
ccc
-
0.1
-
-
0.0039
-
ddd
-
0.05
-
-
0.0020
-
eee
-
0.05
-
-
0.0020
-
A3
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Back side coating.
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
Figure 64. Recommended footprint for the WLCSP100 package
'SDG
'VP
:/&amp;63B$5B)3B9
158/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Table 97. WLCSP100 recommended PCB design rules (0.4 mm pitch)
Dimension
Recommended values
Pitch
0.4 mm
Dpad
0.225 mm
Dsm
0.290 mm
Stencil thickness
0.1 mm
Device marking for WLCSP100
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
Figure 65. WLCSP100 marking example (package top view)
%DOO$LGHQWLILHU
3URGXFWLGHQWLILFDWLRQ (6)9(&lt;
ZĞǀŝƐŝŽŶĐŽĚĞ
&lt;
::
5
06Y9
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
DocID026900 Rev 4
159/168
166
Package information
7.6
STM32F302xD STM32F302xE
LQFP64 package information
LQFP64 is a 64-pin, 10 x 10 mm low-profile quad flat package.
Figure 66. LQFP64 package outline
PP
*$8*(3/$1(
F
$
$
$
6($7,1*3/$1(
&amp;
$
FFF &amp;
'
'
'
.
/
/
(
(
(
E
3,1
,'(17,),&amp;$7,21
H
:B0(B9
1. Drawing is not to scale.
Table 98. LQFP64 package mechanical data
inches(1)
millimeters
Symbol
160/168
Min
Typ
Max
Min
Typ
Max
A
-
-
1.600
-
-
0.0630
A1
0.050
-
0.150
0.0020
-
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
c
0.090
-
0.200
0.0035
-
0.0079
D
-
12.000
-
-
0.4724
-
D1
-
10.000
-
-
0.3937
-
D3
-
7.500
-
-
0.2953
-
E
-
12.000
-
-
0.4724
-
E1
-
10.000
-
-
0.3937
-
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Table 98. LQFP64 package mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
E3
-
7.500
-
-
0.2953
-
e
-
0.500
-
-
0.0197
-
θ
0&deg;
3.5&deg;
7&deg;
0&deg;
3.5&deg;
7&deg;
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
ccc
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 67. Recommended footprint for the LQFP64 package
AIC
1. Dimensions are expressed in millimeters.
DocID026900 Rev 4
161/168
166
Package information
STM32F302xD STM32F302xE
Device marking for LQFP64
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
Figure 68. LQFP64 marking example (package top view)
5HYLVLRQFRGH
5
3URGXFWLGHQWLILFDWLRQ 670)
5(7
'DWHFRGH
z
tt
3LQLGHQWLILHU
06Y9
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
162/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
7.7
Package information
Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 19: General operating conditions.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
•
TA max is the maximum temperature in &deg;C,
•
ΘJA is the package junction-to- thermal resistance, in &deg; C/W,
•
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
•
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL &times; IOL) + Σ ((VDD – VOH) &times; IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 99. Package thermal characteristics
Symbol
ΘJA
7.7.1
Parameter
Value
Thermal resistance junctionLQFP144 - 20 &times; 20 mm
33
Thermal resistance junctionUFBGA100 - 7 &times; 7 mm
59
Thermal resistance junctionLQFP100 - 14 &times; 14 mm
42
Thermal resistance junctionWLCSP100 - 0.4 mm pitch
44
Thermal resistance junctionLQFP64 - 10 &times; 10 mm / 0.5 mm pitch
46
Unit
&deg;C/W
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org
7.7.2
Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 8: Part numbering.
Each temperature range suffix corresponds to a specific guaranteed temperature at
maximum dissipation and to a specific maximum junction temperature.
As applications do not commonly use the STM32F302xD/E at maximum dissipation, it is
useful to calculate the exact power consumption and junction temperature to determine
which temperature range is best suited to the application.
DocID026900 Rev 4
163/168
166
Package information
STM32F302xD STM32F302xE
The following examples show how to calculate the temperature range needed for a given
application.
Example 1: High-performance application
Assuming the following application conditions:
Maximum temperature TAmax = 82 &deg;C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA &times; 3.5 V= 175 mW
PIOmax = 20 &times; 8 mA &times; 0.4 V + 8 &times; 20 mA &times; 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Using the values obtained in Table 99 TJmax is calculated as follows:
–
For LQFP100, 42 &deg;C/W
TJmax = 82 &deg;C + (42 &deg;C/W &times; 447 mW) = 82 &deg;C + 18.774 &deg;C = 100.774 &deg;C
This is within the range of the suffix 6 version parts (–40 &lt; TJ &lt; 105 &deg;C).
In this case, parts must be ordered at least with the temperature range suffix 6 (see
Section 8: Part numbering).
Note:
With this given PDmax we can find the TAmax allowed for a given device temperature range
(order code suffix 6 or 7).
Suffix 6: TAmax = TJmax - (42&deg;C/W &times; 447 mW) = 105-18.774 = 86.226 &deg;C
Suffix 7: TAmax = TJmax - (42&deg;C/W &times; 447 mW) = 125-18.774 = 106.226 &deg;C
Example 2: High-temperature application
Using the same rules, it is possible to address applications that run at high temperature with
a low dissipation, as long as junction temperature TJ remains within the specified range.
Assuming the following application conditions:
Maximum temperature TAmax = 100 &deg;C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA &times; 3.5 V= 70 mW
PIOmax = 20 &times; 8 mA &times; 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW
Using the values obtained in Table 99 TJmax is calculated as follows:
–
For LQFP100, 42 &deg;C/W
TJmax = 100 &deg;C + (42 &deg;C/W &times; 134 mW) = 100 &deg;C + 5.628 &deg;C = 105.628 &deg;C
This is above the range of the suffix 6 version parts (–40 &lt; TJ &lt; 105 &deg;C).
In this case, parts must be ordered at least with the temperature range suffix 7 (see
Section 8: Part numbering) unless we reduce the power dissipation to be able to use suffix 6
parts.
164/168
DocID026900 Rev 4
STM32F302xD STM32F302xE
Package information
Refer to Figure 69 to select the required temperature range (suffix 6 or 7) according to your
temperature or power requirements.
Figure 69. LQFP100 PD max vs. TA
3' P:
6XIIL[
6XIIL[
7$ &amp;
DocID026900 Rev 4
06Y9
165/168
166
Part numbering
8
STM32F302xD STM32F302xE
Part numbering
For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact the nearest ST sales office.
Table 100. Ordering information scheme
Example:
STM32
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = General-purpose
Sub-family
302 = STM32F302xx
Pin count
R = 64 pins
V = 100 pins
Z = 144 pins
Code size
D = 384 Kbytes of Flash memory
E = 512 Kbytes of Flash memory
Package
H = UFBGA
T = LQFP
Y = WLCSP
Temperature range
6 = –40 to 85 &deg;C
7 = –40 to 105 &deg;C
Options
xxx = programmed parts
TR = tape and reel
166/168
DocID026900 Rev 4
F
302
V
E
T
6
x
STM32F302xD STM32F302xE
9
Revision history
Revision history
Table 101. Document revision history
Date
Revision
20-Jan-2015
1
Initial release.
2
Added USB_DM and USB_DP as additional function to
PA11 and PA12 description, respectively in Table 13:
STM32F302xD/E pin definitions.
Updated:
– Figure 56: LQFP144 marking example (package top
view),
– Figure 59: UFBGA100 marking example (package top
view),
– Figure 62: LQFP100 marking example (package top
view).
3
Renamed:
– FMC as FSMC,
– CCM RAM as CCM SRAM.
Removed:
– table: I2C timings specification and Figure: I2C bus
AC waveforms and measurement circuit in Section :
I2C interface characteristics.
Added:
– Package information for WLCSP100 in Section 7:
Package information.
4
Updated:
Table 2: STM32F302xD/E family device features and
peripheral counts, Section 3.17: Ultra-fast comparators
(COMP), Table 66: DAC characteristics, Table 61: ADC
characteristics, Table 13: STM32F302xD/E pin
definitions, Table 14: STM32F302xD/E alternate
function mapping, Figure 41: Recommended NRST pin
protection
Added:
Table 37: Wakeup time using USART.
09-Apr-2015
08-Mar-2016
18-Oct-2016
Changes
DocID026900 Rev 4
167/168
167
STM32F302xD STM32F302xE
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
&copy; 2016 STMicroelectronics – All rights reserved
168/168
DocID026900 Rev 4
">
Hello! I am an AI chatbot specifically trained to assist you with the STMicroelectronics STM32F302RE Data Sheet. I have thoroughly reviewed the document and can help you locate the exact information you need or explain the content in clear and simple terms. Whether you’re looking for guidance on specific features, troubleshooting steps, or general usage, feel free to ask your questions. The more details you provide about your concerns or needs, the more accurately and effectively I can assist you!