JANS2N2222A
Datasheet
Rad-Hard 50 V, 0.8 A NPN transistor
3
4
1
2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
B
(2)
E (1)
DS10450
Product status link
JANS2N2222A
Features
V ceo
I
C
(max.)
50 V 0.8 A
• Hermetic package
• Qualified as per MIL-PRF-19500/255
• 100 krad
H
FE
at 10 V,
150 mA
> 100
T j
(max.)
200 °C
Description
This bipolar transistor is qualified as per MIL-PRF19500/291 and available in JANS and JANSR levels in UB hermetic package.
Able to operate under critical environment and radiation exposure, it provides high reliability performance and immunity to the total ionizing dose (TID) at high and low dose rate conditions.
Specifically recommended for space and harsh environment applications it is suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part-number
JANSR2N2222AUBx
JANS2N2222AUBx
Note:
Product summary
Qualification system
JANSR
JANS
Agency specification
MIL-PRF-19500/255
MIL-PRF-19500/255
See
Table 6
for ordering information.
Package
UB
UB
Radiation level
100 krad
-
DS13827 - Rev 2 - November 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
JANS2N2222A
Electrical ratings
1
Electrical ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
OP
T
J
Table 1. Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Total dissipation at T amb
≤ 25 °C
Total dissipation at T
SP(IS)
= 25 °C
Operating temperature range
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter
R thJSP(IS)
RthJA
Thermal resistance junction-solder pad (infinite sink) (max)
Thermal resistance junction-ambient (max)
Value
75
50
6
0.8
0.5
1
-65 to 200
200
A
W
W
Unit
V
V
V
°C
°C
LCC-3 and UB
Value
90
325
Unit
°C/W
DS13827 - Rev 2 page 2/13
2
JANS2N2222A
Electrical characteristics
Electrical characteristics
Table 3. Electrical characteristics (T amb
= 25 °C unless otherwise specified)
V
V
V
Symbol
I
CBO
(BR)CEO
(1)
CE(sat)
(1)
BE(sat)
(1)
h
I
I
CES
EBO
FE
(1)
h fe
C
OBO
C
IBO t on t off
Parameter
Collector-base cut-off current (I
E
= 0)
Test conditions
V
CB
= 75 V
V
CB
= 60 V
V
CB
= 60 V, T amb
= 150 °C
Collector-base cut-off current (I
E
= 0) V
CE
= 50 V
V
EB
= 6 V
Emitter-base cut-off current (I
C
= 0)
V
EB
= 4 V
Collector-emitter breakdown voltage
(I
B
= 0)
I
C
= 10 mA
Collector-emitter saturation voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-emitter saturation voltage
DC current gain
Small signal current gain
Output capacitance, (I
Input capacitance, (I
Turn-on time
Turn-off time
C
E
= 0)
= 0)
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 10 mA, T amb
= -55 °C, V
CE
= 10 V
I
C
= 20 mA, f = 100 MHz, V
CE
= 20 V
I
C
= 1 mA, f = 1 kHz, V
CE
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
CB
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
EB
= 0.5 V
I
CC
= 150 mA, I
B1
= 15 mA, V
CC
= 30 V
I
CC
= 150 mA, I
B1
= I
B2
= 15 mA, V
CC
= 30 V
50
0.6
30
35
2.5
50
50
75
100
100
Min.
Max.
Unit
10 µA
10 nA
10
50
10
10
µA nA
µA nA
325
300
8
25
35
300
0.3
1
1.2
2
V
V
V
V
V pF pF ns ns
DS13827 - Rev 2 page 3/13
2.1
JANS2N2222A
Radiation assurance
Radiation assurance
JANSR2N2222A is guaranteed at 100 krad in compliance with the MIL-PRF-19500 Group D between 50 and 300 rad/s and 0.1 rad/s as per ESCC 22900. Post radiation electrical characteristics are described in
Table 4
.
Table 4. MIL-PRF-19500 post radiation electrical characteristics (T amb
= 25 °C unless otherwise specified)
V
Symbol
V
V
I
I
I
CBO
EBO
(BR)CEO
(1)
CES
CE(sat)
BE(sat)
[h
FE
]
Parameter Test conditions
Collector cut-off current (I
Emitter cut-off current (I
C
E
= 0)
= 0)
V
CB
= 75 V
V
CB
= 60 V
V
EB
= 6 V
V
EB
= 4 V
Collector-emitter breakdown voltage (I
B
= 0) I
C
= 10 mA
Collector to emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Post irradiation gain calculation
V
CE
= 50 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
Min.
50
0.6
[25]
[37.5]
[50]
[50]
[15]
(2)
(2)
(2)
(2)
(2)
Max
20
20
20
20
100
0.35
1.15
1.38
2.3
325
300
Unit
µA nA
µA nA
V nA
V
V
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and
Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon.
DS13827 - Rev 2 page 4/13
JANS2N2222A
Electrical characteristics (curves)
2.2
Electrical characteristics (curves)
1E3
V
CE
=10 V
Figure 1. DC current gain
100
10
0.0001
0.001
0.01
Ic(A)
110 °C
25 °C
-40 °C
0.1
1
AM09663v1
Figure 2. Collector emitter saturation voltage
0.5
0.45
h
FE
=10
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
.
0 1 0 .
1
Ic(A)
110°C
-40 °C
25 °C
1
AM09664v1
Figure 3. Base emitter saturation voltage
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0 .
0 1 h
FE
=10
25 °C
0 .
1
Ic(A)
-40 °C
110 °C
1
AM09679v1
DS13827 - Rev 2 page 5/13
2.3
Test circuits
Figure 4. Saturated turn-on switching time test circuit
JANS2N2222A
Test circuits
Note:
Note:
(1) The rise time (t r
) of the applied pulse should be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be50 Ω.
(2) Sampling oscilloscope: Z
IN
≥ 100 kΩ, C
IN
≤ 12 pF, rise time ≤ 5ns.
Figure 5. Saturated turn-off switching time test circuit
Note:
Note:
Note:
(1) The rise time (t r
) of the applied pulse should be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be50 Ω.
(2) Sampling oscilloscope: Z
IN
≥ 100 kΩ, C
IN
≤ 12 pF, rise time ≤ 5ns.
(3) Alternate test point for high impedance attenuating probe.
DS13827 - Rev 2 page 6/13
3
3.1
JANS2N2222A
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
UB package information
Figure 6. UB package outline
DS13827 - Rev 2
Pin n° 1 identification for
JANS products
Pad 1: Emitter
Pad 2: Base
Pad 3: Collector
Pad 4: Shielding connected to the lid
8206487 rev.6
page 7/13
DS13827 - Rev 2
Symbols
G
I
J
K
L
A
C
D
E
F r r1 r2
M
N
N1
JANS2N2222A
UB package information
Min.
2.92
2.41
0.42
1.37
0.41
1.16
0.46
0.56
0.92
1.95
2.46
1.81
0.91
Table 5. UB package mechanical data
Dimensions in mm
Typ.
3.05
2.54
0.57
1.52
0.51
0.51
0.76
1.02
2.03
2.54
1.91
0.96
0.20
0.30
0.56
Max.
3.18
2.67
0.72
1.67
0.61
1.42
0.56
0.96
1.12
2.11
2.62
2.01
1.02
Dimensions in inches (for reference only)
Min.
Typ.
Max.
0.045
0.018
0.024
0.036
0.077
0.115
0.095
0.0165
0.054
0.016
0.097
0.071
0.036
0.020
0.030
0.040
0.080
0.120
0.100
0.0225
0.060
0.020
0.100
0.075
0.038
0.008
0.012
0.022
0.056
0.022
0.036
0.044
0.083
0.125
0.105
0.0285
0.066
0.024
0.103
0.079
0.040
page 8/13
4
Ordering information
Table 6. Ordering information
Part number
Agency specification
Quality level
Radiation level
Package Weight Lead finish Marking
(1)
Packing
J2N2222AUB1
JANSR2N2222AUBC
JANSR2N2222AUBA
JANS2N2222AUBC
JANS2N2222AUBA
-
MIL-PRF-
19500/255
Engineering model
JANSR
JANSR
JANS
JANS
-
100 krad
100 krad
-
-
UB 0.6 g
Gold
Gold
Solder dip
Gold
Solder dip
J2222AUB1
JSR2222
JSR2222
JS2222
JS2222
WafflePack
1. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.
5
5.1
5.2
JANS2N2222A
Other information
Other information
Traceability information
The date code in formation is structured as described in the table below.
Table 7. Date codes
Model
EM
JANS / JANSR
1. yy = year, ww = week number, N = lot index in the week.
Documentation
Quality level
JANS
JANSR
Engineering model
Date code (1)
3yywwN
WyywwN
Table 8. Documentation provided for each type of product
Radiation level
-
100 krad
-
Documentation
Certificate of conformance
Certificate of conformance
Radiation verification test (RVT) report (50 rad/s and 0.1 rad/s)
Certificate of conformance
DS13827 - Rev 2 page 10/13
Revision history
Date
11-Oct-2021
22-Nov-2021
Table 9. Document revision history
Revision
1
2
Changes
Initial release.
Updated Description,
Table 2 ,
Table 4
and
Table 8
.
JANS2N2222A
DS13827 - Rev 2 page 11/13
JANS2N2222A
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Radiation assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.1
UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5 Other information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5.1
Traceability information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS13827 - Rev 2 page 12/13
JANS2N2222A
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
DS13827 - Rev 2 page 13/13
