2N5551HR
Datasheet
Rad-Hard 160 V, 0.5 A NPN bipolar transistor
3
3
4
2
LCC-3
1
UB
2
Pin 4 in UB is connected to the metallic lid.
C (3)
B
(2)
E (1)
DS10450
1
Product status link
2N5551HR
Features
V ceo
I
C
(max.)
160 V 0.5 A
• Hermetic packages
• ESCC and JANS qualified
• Up to 100 krad(Si) low dose rate
H
FE
at 5 V,
10 mA
> 80
T j
(max.)
200 °C
Description
This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC
22900.
Qualified as per ESCC 5201/019 and MIL-PRF-19500/767 specifications and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Device
JANSR2N5551UBx
JANS2N5551UBx
2N5551RUBx
2N5551UBx
SOC5551RHRx
SOC5551HRx
Product summary
Qualification system
Agency specification
JANSR
JANS
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
MIL-PRF-19500/767
MIL-PRF-19500/767
5201/019
5201/019
5201/019
5201/019
Package
UB
UB
UB
UB
LCC-3
LCC-3
Radiation level
100 krad
-
100 krad
-
100 krad
-
DS6657 - Rev 14 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
2N5551HR
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Parameter
P
TOT
Total dissipation at T amb
≤ 25 °C
T
STG
T
J
Total dissipation at T
SP(IS)
= 25 °C
Storage temperature range
Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
LCC-3 and UB for ESCC and JANS
LCC-3 and UB (1)
UB for JANS
Table 2. Thermal data for SMD package
Symbol Parameter
R thJSP(IS)
RthJA
Thermal resistance junction-solder pad (infinite sink) (max) for JANS
Thermal resistance junction-ambient (max) for JANS
Thermal resistance junction-ambient (max) for ESCC
Thermal resistance junction-ambient (1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Value
180
160
6
0.5
0.36
0.58
1
-65 to 200
200
Unit
V
V
V
A
W
W
°C
°C
LCC-3 and UB
Value
85
280
486
302
Unit
°C/W
°C/W
DS6657 - Rev 14 page 2/15
2
2N5551HR
Electrical characteristics
Electrical characteristics
Symbol
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
(1)
V
(BR)EBO
V
CE(sat)
(1)
V
BE(sat)
(1)
h
FE
(1)
h fe
C
OBO
C
EBO
Table 3. Electrical characteristics (T amb
= 25 °C unless otherwise specified)
Parameter
Collector-base cut-off current (I
E
= 0)
Test conditions
V
CB
= 120 V
V
CB
= 120 V, T amb
= 150 °C
V
CE
= 100 V
V
EB
= 4 V
Min.
Max.
Unit
50 nA
50
50
50
µA nA nA
Collector-emitter cut-off current (I
B
= 0)
Emitter-base cut-off current (I
C
= 0)
Collector-base breakdown voltage
(I
E
= 0)
Collector-emitter breakdown voltage
(I
B
= 0)
Emitter-base breakdown voltage
(I
C
= 0)
I
C
= 100 µA
I
C
= 1 mA
I
E
= 10 µA
180
160
6
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Small signal current gain
Output capacitance, (I
E
= 0)
Emitter-base, (I
C
= 0)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
I
C
= 10 mA, T amb
= -55 °C, V
CE
= 5 V
For ESCC:
V
CE
= 10 V, I
C
= 10 mA, f > 100 MHz
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
For JANS:
I
C
= 10 mA, f = 20 MHz, V
CE
= 10 V f = 1 MHz, V
CB
= 10 V
For ESCC: f = 1 MHz, V
EB
= 0.5 V
For JANS: f = 1MHz, V
EB
= 0.5 V
80
80
30
20
1
50
2.5
0.15
0.2
1
1
250
200
6
20
45
V
V pF pF
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
DS6657 - Rev 14 page 3/15
2N5551HR
Electrical characteristics (curves)
2.1
1000
Electrical characteristics (curves)
Figure 1. h
FE
at V
CE
= 5 V
AM16336v1
T
J
= -55°C
T
J
= -40°C
T
J
= 25°C
T
J
= 110°C
T
J
= 125°C
100
Figure 2. V
CE(sat)
at h
FE
=10
1
T
J
=-55°C
T J =-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
0.1
AM16337v1
10
0.001
0.1
I C (A)
0.01
0.9
0.8
0.7
1
0.6
0.5
0.4
0.001
0.1
0.01
0.001
Figure 3. V
BE(sat)
at h
FE
=10
I C (A)
0.01
AM16338v1
I C (A)
0.01
T
J
=-55°C
T J =-40°C
T
J
=25°C
T
J
=110 °C
T
J
=125 °C
0.1
DS6657 - Rev 14 page 4/15
3
3.1
2N5551HR
Radiation hardness assurance
Radiation hardness assurance
JANS radiation assurance
JANSR2N5551 is guaranteed at 100 krad in compliance with the MIL-PRF-19500, Group D between 50 and 300 rad/s with an additional guarantee at 0.1 rad/s as per ESCC 22900.
Radiation verification test report is provided with each shipment.
Table 4. MIL-PRF-19500 post radiation electrical characteristics (T amb
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
EBO
V
(BR)CEO
(1)
V
(BR)BCO
V
(BR)EBO
V
V
CE(sat)
BE(sat)
[h
FE
]
Parameter
Collector to base cutoff current
Emitter to base cutoff current
Collector-emitter breakdown voltage
Base-collector breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Post irradiation gain calculation
Test conditions
V
CB
= 120 V
V
EB
= 4 V
I
C
= 1 mA
I
C
= 100 µA
I
EB
= 10 µA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
Min.
160
180
6
0.6
[40]
(2)
[40]
(2)
[15]
(2)
Max
100
100
0.1725
0.23
1.15
1.15
250
Unit nA nA
V
V
V
V
V
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and
Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon.
DS6657 - Rev 14 page 5/15
3.2
2N5551HR
ESCC radiation assurance
ESCC radiation assurance
•
•
•
This products is guaranteed in radiation as per ESCC 22900 and in compliance with ESCC 5201/019 specification.
Each lot is tested in radiation according to the following procedure:
•
Radiation condition of 0.1 rad (Si)/s.
Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference.
Acceptance criteria of each wafer at 100 krad if all 10 samples comply with the post radiation electrical characteristics as per
Table 5 .
Radiation verification test (RVT) report is delivered with the lot manufactured with the wafer of the tested samples.
RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si), post annealing at 24 hour / 25 °C and post annealing at 168 hours / 100°C.
Table 5. ESCC 5201/019 post radiation electrical characteristics (T amb
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
(1)
V
(BR)EBO
V
V
CE(sat)
(1)
BE(sat)
(1)
[h
FE
]
(1)
Parameter Test conditions
Collector cut-off current (I
E
= 0)
Collector-emitter cut-off current (I
B
= 0)
Emitter cut-off current (I
C
= 0)
Collector-base breakdown voltage (I
E
= 0)
V
CB
= 120 V
V
CE
= 100 V
V
EB
= 4 V
I
C
= 100 μA
Collector-emitter breakdown voltage (I
B
= 0) I
C
= 1 mA
Emitter-base breakdown voltage (I
C
= 0) I
E
= 10 μA
Collector-emitter saturation voltage
I
C
=10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
=10 mA, I
B
= 1 mA
Base-emitter saturation voltage
I
C
= 50 mA, I
B
= 5 mA
I
C
= 1 mA, V
CE
= 5 V
Post irradiation gain calculation (2)
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
Min.
180
160
6
[40]
[40]
[15]
Max
50
50
50
0.15
0.2
1
1
250
Unit nA nA nA
V
V
V
V
V
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.
DS6657 - Rev 14 page 6/15
4
4.1
2N5551HR
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
UB package information
Figure 4. UB package outline
DS6657 - Rev 14
Pin n° 1 identification for
JANS products
Pad 1: Emitter
Pad 2: Base
Pad 3: Collector
Pad 4: Shielding connected to the lid
8206487 rev.6
page 7/15
DS6657 - Rev 14
2N5551HR
UB package information
Symbols
G
I
J
K
L
A
C
D
E
F r r1 r2
M
N
N1
Table 6. UB package mechanical data
Min.
Dimensions in mm
Typ.
Max.
2.92
2.41
0.42
1.37
0.41
1.16
0.46
0.56
0.92
1.95
2.46
1.81
0.91
3.18
2.67
0.72
1.67
0.61
1.42
0.56
0.96
1.12
2.11
2.62
2.01
1.02
3.05
2.54
0.57
1.52
0.51
0.51
0.76
1.02
2.03
2.54
1.91
0.96
0.20
0.30
0.56
Min.
Dimensions in inches (for reference only)
Typ.
Max.
0.045
0.018
0.024
0.036
0.077
0.115
0.095
0.0165
0.054
0.016
0.097
0.071
0.036
0.020
0.030
0.040
0.080
0.120
0.100
0.0225
0.060
0.020
0.100
0.075
0.038
0.008
0.012
0.022
0.056
0.022
0.036
0.044
0.083
0.125
0.105
0.0285
0.066
0.024
0.103
0.079
0.040
page 8/15
4.2
LCC-3 package information
Figure 5. LCC-3 package outline
N
Pad 1: emitter
Pad 2: base
Pad 3: collector
2N5551HR
LCC-3 package information
DS6657 - Rev 14
0041211 rev.14
page 9/15
Symbols
G
I
J
K
L
M
N
R
A
C
D
E
F
2N5551HR
LCC-3 package information
Min.
2.92
2.41
0.42
1.37
0.40
2.46
1.80
1.16
0.45
0.60
0.91
1.95
Table 7. LCC-3 package mechanical data
Dimensions in mm
Typ.
3.05
2.54
0.57
1.52
0.50
0.50
0.56
1.01
2.03
2.54
1.90
0.30
Max.
3.17
2.66
0.72
1.67
0.60
2.62
2.00
1.42
0.56
0.96
1.12
2.11
Dimensions in inches (for reference only)
Min.
Typ.
Max.
0.046
0.018
0.024
0.036
0.077
0.115
0.095
0.0165
0.054
0.016
0.097
0.071
0.020
0.022
0.040
0.080
0.120
0.100
0.0225
0.060
0.020
0.100
0.075
0.012
0.056
0.022
0.038
0.044
0.083
0.125
0.105
0.0285
0.066
0.024
0.103
0.079
DS6657 - Rev 14 page 10/15
5
Ordering information
Table 8. Ordering information
Part number
Agency specification
Quality level
Radiation level (1)
Package Mass Lead finish
Marking (2)
Packing
J2N5551UB1
2N5551UB1
SOC55511
JANSR2N5551UBG
JANSR2N5551UBT
JANS2N5551UBG
JANS2N5551UBT
2N5551RUBG
2N5551RUBT
2N5551UBG
2N5551UBT
SOC5551RHRG
SOC5551RHRT
SOC5551RHRTW
SOC5551HRG
SOC5551HRGW
SOC5551HRT
-
-
-
MIL-PRF-
19500/767
5201/019/08R
5201/019/09R
5201/019/08
5201/019/09
5201/019/04R
5201/019/05R
5201/019/05R
5201/019/04
5201/019/04
5201/019/05
Engineering model JANS
Engineering model ESCC
Engineering model ESCC
JANSR
JANSR
JANS
JANS
ESCC Flight
-
-
-
100 krad
-
100 krad
-
100 krad
-
-
-
UB
LCC-3
UB
LCC-3
0.6 g
Gold
Solder Dip
Gold
Solder Dip
Gold
Solder Dip
Gold
Solder Dip
Gold
Solder Dip
Gold
Gold
Solder Dip
J5551UB1
2N55511UB1
SOC55511
JSR5551
JSR5551
JS5551
JS5551
520101908R
520101909R
520101908
WafflePack
520101909
520101904R
520101905R
WafflePack
520101905R Tape and reel
520101904 WafflePack
520101904 Tape and reel
520101905 WafflePack
1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900.
2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.
Contact ST sales office for information about specific conditions for products in die form.
6
6.1
6.2
Other information
Traceability information
Date code information is described in the table below.
Table 9. Date codes
Model
EM
ESCC
1. yy = year, ww = week number, N = lot index in the week.
Date code
(1)
3yywwN yywwN
Documentation
Quality level
JANS Flight
JANSR Flight
Engineering model
ESCC
ESCC
Table 10. Documentation provided for each type of product
Radiation level
-
100 krad
-
-
100 krad
Documentation
Certificate of conformance
Certificate of conformance
RVT report (50 rad/s and 0.1 rad/s)
Certificate of conformance
Certificate of conformance
ESCC qualification maintenance lot reference
Certificate of conformance
ESCC qualification maintenance lot reference
Radiation data at 25 / 50 / 70 / 100 krad at 0.1 rad / s.
2N5551HR
Other information
DS6657 - Rev 14 page 12/15
2N5551HR
Revision history
Date
04-Jan-2010
17-May-2010
12-Jul-2010
13-Nov-2012
12-Dec-2013
27-Mar-2014
01-Apr-2014
14-Jul-2014
05-Jun-2015
20-Aug-2015
19-Jan-2017
29-Sep-2020
30-Sep-2020
18-Oct-2021
Table 11. Document revision history
Revision
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Changes
Initial release.
Modified: Table 1: Device summary and Table 9 on page 12.
Modified: Table 1: Device summary and Table 9 on page 12.
Added: Section 2.1: Electrical characteristics (curves).
Updated Table 1: Device summary, Table 2: Absolute maximum ratings and Section 4:
Package mechanical data.
Added Section 5: Order codes and Section 6: Shipping details
Updated Table 1: Device summary, Section 3: Radiation hardness assurance, Figure 7: UB package outline, Section 5: Order codes and Table 13: Documentation provided for each type of product.
Minor text changes.
Inserted note in package silhouette on cover page.
Updated Table 1: Device summary and Table 11: Order codes.
Updated Table 10: UB mechanical data.
Updated: Section 4.2: TO-18 package information
Minor text changes.
Updated agency specification number for JANS and JANSR qualification system.
Updated Figure 5: LCC-3 package outline.
Removed TO-18 package information.
Minor text changes.
Updated Table 4 .
Updated Description,
Table 3 and
Table 8
.
DS6657 - Rev 14 page 13/15
2N5551HR
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3.1
JANS radiation assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2
ESCC radiation assurance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4.1
UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2
LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
6 Other information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
6.1
Traceability information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.2
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS6657 - Rev 14 page 14/15
2N5551HR
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
DS6657 - Rev 14 page 15/15
