STMicroelectronics LET9180 Datasheet
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LET9180
M246
Epoxy sealed
Figure 1. Pin connection
1 2
180 W, 32 V Wideband LDMOS transistor
Datasheet
-
target specification
Features
• Excellent thermal stability
• Common source configuration push-pull
• P
OUT
= 180 W with 19 dB gain @ 860 MHz
• BeO-free package
Description
The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2
GHz.
1-2 Drain
4-5 Gate
5 4
3 Source
Order code
LET9180
Table 1. Device summary
Packaging
M246
Branding
LET9180
May 2013 DocID024706 Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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Contents
Contents
LET9180
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2/10 DocID024706 Rev 1
LET9180 Electrical data
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
T
J
T
STG
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Parameter Value
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
80
- 10 / + 15
24
318
200
-65 to +150
Unit
V
V
A
W
°C
°C
Symbol
R thJC
Table 3. Thermal data
Parameter
Junction - case thermal resistance
Value
0.55
Unit
°C/W
DocID024706 Rev 1 3/10
Electrical characteristics LET9180
T
CASE
= +25 o
C
2.1 Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Table 4. Static (per section)
Test conditions
V
GS
= 0, I
DS
= 10 mA
V
GS
= 0, V
DS
= 28 V
V
GS
= 5 V, V
DS
= 0
V
DS
= 28 V
,
I
D
= 100 mA
V
GS
= 10 V, I
D
= 3 A
V
DS
= 10 V, I
D
= 3 A
V
GS
= 0, V
DS
= 32 V, f = 1 MHz
V
GS
= 0, V
DS
= 32 V, f= 1 MHz
V
GS
= 0, V
DS
= 32 V, f = 1 MHz
Min
80
2.0
2.5
Typ
0.8
70
36
0.9
Max
1
1
5.0
1.2
2.2 Dynamic
Symbol
Table 5. Dynamic (V
DD
= 32 V, I
DQ
= 500 mA)
Test conditions
P
OUT
G
PS
η
D
Load
Mismatch f = 860 MHz, P
IN
= 3 W
P
OUT
= 180 W, f = 860 MHz
P
OUT
= 180 W, f = 860 MHz
P
OUT =
220 W, f = 860 MHz all phase angles
Min Typ Max Unit
150 175
18 20
60 69
-
W dB
%
65:1 VSWR
Unit mho pF pF pF
V
μ
A
μ A
V
V
4/10 DocID024706 Rev 1
LET9180 Impedance data
Figure 2.
Impedance data
Typical input
G
Zin
Table 6.
Impedance data
Frequency MHz
860
S
Z source ( Ω )
TBD
D
Z
DL
Typical drain load
Z load ( Ω )
TBD
DocID024706 Rev 1 5/10
Typical performances LET9180
Figure 3.
Gain vs output power
Gain
(dB)
Freq= 860MHz
I
DQ
= 500mA
21
19
17
15
28V
30V
32V
34V
36V
AM17382v1
Figure 4.
Efficiency vs output power
Efficiency
(%)
90
Freq= 860MHz
I
DQ
= 500mA
30V
32V
34V
AM17383v1
70
36V
28V
50
30
13
0 40 80 120 160 200 240 P out
(W)
10
0 40 80 120 160 200 240 P out
(W)
6/10 DocID024706 Rev 1
LET9180
5 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID024706 Rev 1 7/10
Package mechanical data LET9180
F
G
D
E
A
B
C
J
K
H
I
L
Table 7. M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data
Dim.
mm.
Inch
Typ Typ Min
5.33
6.48
17.27
5.72
Max
5.59
6.73
18.29
5.97
Min
0.210
0.255
0.680
0.225
Max
0.220
0.265
0.720
0.235
28.83
16.26
4.19
0.08
1.83
1.40
3.18
22.86
29.08
16.76
5.08
0.15
2.24
1.65
3.43
1.135
0.640
0.165
0.003
0.072
0.055
0.125
.900
1.145
0.660
0.200
0.006
0.088
0.065
0.135
Figure 5. Package dimensions
8/10
Controlling dimension: Inches
DocID024706 Rev 1
Ref. 7145054A
LET9180
Date
29-May-2013
Revision
Table 8. Document revision history
Changes
1 Initial release.
Revision history
DocID024706 Rev 1 9/10
LET9180
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