STMicroelectronics PD57060S-E Datasheet

Below you will find brief information for LdmoST PD57060S-E, LdmoST PD57060-E, LdmoST PD57060TR-E and LdmoST PD57060STR-E. This device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device's superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

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RF Power Transistor LdmoST PD57060S-E - Datasheet | Manualzz

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Key features

  • Excellent thermal stability

  • Common source configuration

  • 60 W output with 14.3 dB gain @ 945 MHz / 28 V

  • New RF plastic package

  • High gain, broad band

  • Operates at 28 V

  • Superior linearity performance

  • High reliability

  • SMD package

  • Optimized for RF needs

Frequently asked questions

The maximum drain-source voltage is 65V.

The maximum power dissipation is 79W at Tc = 70°C.

The maximum operating junction temperature is 165°C.

The thermal resistance of this device is 1.0 °C/W.

The minimum power output of this device at 945MHz is 60W with a power gain of 14.3dB.

The drain efficiency of this device at 945MHz is 54%.

The moisture sensitivity level of this device is MSL 3 according to J-STD-020B.

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