STD16N60M2
Datasheet
N-channel 600 V, 0.280 Ω typ., 12 A MDmesh M2
Power MOSFET in a DPAK package
G(1)
TAB
DPAK
1
2 3
D(2, TAB)
S(3)
AM15572v1_tab
Features
Order code
STD16N60M2
V
DS
600 V
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
R
DS(on)
max.
0.320 Ω
I
D
12 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status
STD16N60M2
Product summary
Order code
Marking
Package
Packing
STD16N60M2
16N60M2
DPAK
Tape and reel
DS10725 - Rev 3 - May 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STD16N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
Gate-source voltage
Parameter
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
Drain current (pulsed)
P
TOT
dv/dt (2)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
dv/dt (3)
T stg
T j
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 12 A, di/dt ≤ 400 A/µs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 480 V
Table 2. Thermal data
Symbol
R thj-case
Thermal resistance junction-case
R thj-pcb
(1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Parameter
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
±25
12
7.6
48
110
15
50
-55 to 150
-55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value Unit
1.14
°C/W
50 °C/W
Value Unit
2.9
130
A mJ
DS10725 - Rev 3 page 2/19
2
STD16N60M2
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source breakdown voltage
Zero gate voltage Drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
1. Defined by design, not subject to production test.
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V, T
C
= 125 °C (1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 6 A
Min.
Typ.
Max.
Unit
600
1
V
µA
2
100
±10
µA
µA
3 4 V
0.280 0.320
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
C oss eq.
(1)
Equivalent output capacitance
R
G
Intrinsic gate resistance
Q g
Total gate charge
Q gs
Q gd
Gate-source charge
Gate-drain charge
V
DS
V
DS
V
DD
Test conditions
= 100 V, f = 1 MHz, V
= 0 V to 480 V, V f = 1 MHz open drain
= 480 V, I
D
(see
)
GS
GS
= 0 V
= 12 A, V
GS
= 0 V
= 0 to 10 V
Figure 14. Test circuit for gate charge behavior
Min.
-
-
-
-
-
-
-
-
Typ.
700
38
1.2
140
5.3
19
3.3
9.5
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 6 A R
G
= 4.7 Ω,
V
GS
= 10 V (see Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
-
10.5
9.5
-
ns ns
-
58
18.5
-
ns ns
DS10725 - Rev 3 page 3/19
STD16N60M2
Electrical characteristics
Table 7. Source drain diode
Symbol
I
I
SD
SDM
V
I
I
SD
(2)
t
Q rr rr
(1)
RRM t
Q rr rr
RRM
Parameter
Source-drain current
Test conditions
Source-drain current
(pulsed)
Forward on voltage V
GS
= 0 V, I
SD
= 12 A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs, V
DD
= 60 V (see
Figure 15. Test circuit for inductive load switching and diode recovery times )
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs, V
DD
= 60 V, T j
= 150 °C (see
Figure 15. Test circuit for inductive load switching and diode recovery times )
1. Pulse width is limited by safe operating area
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
Max.
Unit
12 A
-
-
-
-
-
-
-
-
316
3.25
20.5
454
4.8
21
48
1.6
A
V ns
µC
A ns
µC
A
DS10725 - Rev 3 page 4/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
2.1
Characteristics curves
I
D
(A)
Figure 1. Safe operating area
GIPG090320151717ALS
10
10
1
0
10 -1
10 -1
DS(on)
10 μs
100 μs
10 0
T j
T c
≤ 150 °C
= 25 °C single pulse
10 1 10 2
1 ms
10 ms
V
DS
(V)
15
10
5
0
0
I
D
(A)
25
Figure 3. Output characteristics
GIPG100320150819ALS
V
GS
= 7, 8, 9, 10 V
V
GS
= 6 V
20
4 8
V
GS
= 5 V
12
V
GS
= 4 V
16 V
DS
(V)
K
Figure 2. Thermal impedance
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
15
10
5
0
0
I
D
(A)
25
Figure 4. Transfer characteristics
GIPG100320150904ALS
V
DS
= 17 V
20
2 4 6 8 V
GS
(V)
DS10725 - Rev 3 page 5/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
Figure 5. Normalized gate threshold voltage vs.
temperature
V
GS(th)
(norm.)
1.1
GIPG100320151014ALS
1.0
I
D
= 250 μA
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T
J
(°C)
Figure 7. Static drain-source on-resistance
R
DS(on)
(Ω)
GIPG100320151105ALS
0.295
0.290
0.285
0.280
0.275
0.270
0 2 4
V
GS
= 10 V
6 8 10 12 I
D
(A)
Figure 9. Gate charge vs. gate-source voltage
V
GS
(V)
GIPG100320151120ALS
V
DS
(V)
600
12
500
10
V
DS
400
8
V
DD
I
D
= 480 V
= 12 A
300
6
4
200
2
100
0
0 5 10 15 20
0
Qg (nC)
Figure 6. Normalized V
(BR)DSS
vs. temperature
V
(BR)DSS
(norm.)
1.08
GIPG100320151032ALS
I
D
= 1 mA
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T
J
(°C)
Figure 8. Normalized on-resistance vs. temperature
R
DS(on)
(norm.)
2.2
GIPG100320151114ALS
1.8
V
GS
= 10 V
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T
J
(°C)
C
(pF)
Figure 10. Capacitance variations
GIPG100320151141ALS
10 3
C
ISS
10 2
C
OSS
10 1
10 0 f = 1 MHz
C
RSS
10 -1
10 -1 10 0 10 1 10 2 V
DS
(V)
DS10725 - Rev 3 page 6/19
STD16N60M2
STD16N60M2 Electrical characteristics curves
Figure 11. Output capacitance stored energy
E
(μJ)
GIPG100320151155ALS
5
4
3
2
1
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 12. Source- drain diode forward characteristics
V
SD
(V)
1.1
GIPG100320151205ALS
T
J
= - 50 °C
1.0
0.9
T
J
= 25 °C
0.8
0.7
0.6
0.5
0.4
0 2 4 6 8
T
J
= 150 °C
10 12 I
SD
(A)
DS10725 - Rev 3 page 7/19
STD16N60M2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS10725 - Rev 3 page 8/19
4
STD16N60M2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS10725 - Rev 3 page 9/19
4.1
STD16N60M2
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 19. DPAK (TO-252) type A2 package outline
DS10725 - Rev 3
0068772_type-A2_rev26 page 10/19
DS10725 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STD16N60M2
DPAK (TO-252) type A2 package information
Table 8. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/19
4.2
STD16N60M2
DPAK (TO-252) type C2 package information
DPAK (TO-252) type C2 package information
Figure 20. DPAK (TO-252) type C2 package outline
DS10725 - Rev 3
0068772_type-C2_rev26 page 12/19
DS10725 - Rev 3
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD16N60M2
DPAK (TO-252) type C2 package information
Table 9. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 13/19
STD16N60M2
DPAK (TO-252) type C2 package information
Figure 21. DPAK (TO-252) recommended footprint (dimensions are in mm)
DS10725 - Rev 3 page 14/19
4.3
DPAK (TO-252) packing information
Figure 22. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
STD16N60M2
DPAK (TO-252) packing information
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS10725 - Rev 3 page 15/19
DS10725 - Rev 3
A
D
B
Figure 23. DPAK (TO-252) reel outline
STD16N60M2
DPAK (TO-252) packing information
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
AM06038v1
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 16/19
STD16N60M2
Revision history
Table 11. Document revision history
Date
26-Nov-2014
24-Mar-2015
02-May-2019
Revision
1
2
3
Changes
First release.
Text edits throughout document
On cover page: updated cover page title description, updated features table.
In Section 1, Electrical ratings: updated "Avalanche characteristics" table
In Section 2, Electrical characteristics: renamed "On/off states" table to "Static" and updated table
In Section 2, Electrical characteristics: updated tables "Dynamic", "Switching times" and "Sourcedrain diode"
Added Section 2.1, Electrical characteristics (curves)
Updated 4.1, DPAK (TO-252) type A package information
Added Section 4.2 DPAK (TO-252) type C2 package information
.
Minor text changed.
DS10725 - Rev 3 page 17/19
STD16N60M2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
DS10725 - Rev 3 page 18/19
STD16N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10725 - Rev 3 page 19/19
