STW58N65DM2AG
Datasheet
Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A, MDmesh™ DM2
Power MOSFET in a TO-247 package
Features
Order code
STW58N65DM2AG
V
DS
650 V
R
DS(on)
max.
0.065 Ω
I
D
48 A
P
TOT
360 W
G(1)
TO-247
1
2
3
D(2)
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
S(3)
Product status link
STW58N65DM2AG
Product summary
Order code STW58N65DM2AG
Marking
Package
Packing
58N65DM2
TO-247
Tube
NG1D2S3Z
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
DS11265 - Rev 3 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STW58N65DM2AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
Gate-source voltage
Parameter
I
D
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
I
DM
(1)
P
TOT
dv/dt (2)
Drain current (pulsed)
Total dissipation at T case
= 25 °C
dv/dt (3)
T stg
T
J
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 48 A, di/dt=800 A/μs, V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
3. V
DS
≤ 520 V
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Thermal resistance junction-case
Parameter
Thermal resistance junction-ambient
Table 3. Avalanche characteristics
Symbol
I
AR
(1)
E
AS
(2)
Single pulse avalanche energy
Parameter
Avalanche current, repetitive or not repetitive
1. Pulse width is limited by T
Jmax.
2. Starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V
Value
±25
48
30
150
360
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.35
50
Unit
°C/W
Value
7
1300
Unit
A mJ
DS11265 - Rev 3 page 2/13
2
STW58N65DM2AG
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V,
T case
= 125 °C (1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 24 A
1. Defined by design, not subject to production test.
Min.
650
3
Typ.
Max.
Unit
V
10
100
4
±5
5
0.058
0.065
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
Q
Q
Q
G g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
Test conditions
= 100 V, f = 1 MHz, V
GS
= 0 V
V
DS
= 0 to 520 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 520 V, I
D
= 48 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
-
-
Typ.
4100
160
2.5
375
4.1
88
22
37
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 24 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
28
31
157
7.7
Max.
-
-
-
-
Unit ns
DS11265 - Rev 3 page 3/13
STW58N65DM2AG
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
I
I t
Q
RRM t
Q rr rr rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Test conditions
V
GS
= 0 V, I
SD
= 48 A
I
SD
= 48 A, di/dt = 100 A/µs,
V
DD
= 100 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 48 A, di/dt = 100 A/µs,
V
DD
= 100 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
Min.
-
-
-
-
-
-
-
-
-
10
260
2.75
21
Typ.
Max.
48
150
1.6
135
0.68
Unit
A
A
V ns
µC
A ns
µC
A
DS11265 - Rev 3 page 4/13
STW58N65DM2AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG270620181145SOA
10 2
Operation in this area is limited by R
DS(on)
10 1 t p
=10 µs t p
=100 µs
10 0 t p
=1 ms
10 -1
10 -2
10 -1 10 0
Single pulse
T j
≤ 150 °C
T c
= 25°C
10 1 10 2 t p
=10 ms
V
DS
(V)
80
60
40
I
D
(A)
140
120
100
20
0
0
Figure 3. Output characteristics
4 8
GIPG090915FQFBWOCH
V
GS
= 9,10 V
V
GS
= 8 V
V
GS
= 7 V
12
V
GS
= 6 V
V
GS
16
= 5 V
V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
GIPG090915FQFBWQVG V
(V)
DS
V
DD
= 520 V, I
D
= 48 A
600
6
4
10
8
2
0
0
V
DS
20 40 60 80 100
500
400
300
200
100
0
Q g
(nC)
K
Figure 2. Thermal impedance
TO247EZx8
10 -1
Z th
=k*R thj-c
10 -2
10 -3
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Transfer characteristics
80
60
40
I
D
(A)
140
120
100
20
0
2 4
GIPG090915FQFBWTCH
V
DS
= 20 V
6 8 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(Ω)
GIPG090915FQFBWRID
V
GS
= 10 V
0.066
0.062
0.058
0.054
0.050
0 8 16 24 32 40 I
D
(A)
DS11265 - Rev 3 page 5/13
STW58N65DM2AG
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GIPG090915FQFBWCVR
10 4
C
ISS
10 3
10 2
C
OSS
10 1
10 0
10 -1 f = 1 MHz
10 0 10 1 10 2
C
RSS
V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.2
GIPG090915FQFBWRON
V
GS
= 10 V
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T j
(°C)
Figure 11. Output capacitance stored energy
E
OSS
(µJ)
28
24
20
GIPG090915FQFBWEOS
16
12
8
4
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GIPG090915FQFBWVTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.12
GIPG090915FQFBWBDV
I
D
= 1 mA
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T j
(°C)
Figure 12. Source- drain diode forward characteristics
V
SD
(V)
GIPG090915FQFBWSDF
T j
= -50 °C
1.1
T j
= 25 °C
0.9
T j
= 150 °C
0.7
0.5
0.3
0 8 16 24 32 40 I
SD
(A)
DS11265 - Rev 3 page 6/13
STW58N65DM2AG
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS11265 - Rev 3 page 7/13
4
STW58N65DM2AG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS11265 - Rev 3 page 8/13
4.1
TO-247 package information
Figure 19. TO-247 package outline
STW58N65DM2AG
TO-247 package information
DS11265 - Rev 3
0075325_9 page 9/13
Dim.
e
L
L1
D
E
A
A1 b b1 b2 c
L2
ØP
ØR
S
Table 8. TO-247 package mechanical data mm
Typ.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
5.45
18.50
3.55
4.50
5.30
5.50
STW58N65DM2AG
TO-247 package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DS11265 - Rev 3 page 10/13
STW58N65DM2AG
Revision history
Date
09-Sep-2015
15-Sep-2015
02-Jul-2018
2
3
Table 9. Document revision history
Version
1
Changes
Initial release.
In section Electrical characteristics (curves) :
- updated figure Safe operating area
Removed maturity status indication from cover page. The document status is production data.
Updated Table 1. Absolute maximum ratings
and
Table 7. Source-drain diode .
Updated Figure 1. Safe operating area
.
Minor text changes
DS11265 - Rev 3 page 11/13
STW58N65DM2AG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS11265 - Rev 3 page 12/13
STW58N65DM2AG
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DS11265 - Rev 3 page 13/13
