STB22N60DM6
Datasheet
N-channel 600 V, 200 mΩ typ., 15 A, MDmesh DM6 Power MOSFET in a D²PAK package
TAB
G(1)
2
1
3
D²PAK
D(2, TAB)
S(3)
AM01476v1_tab
Features
Order code
STB22N60DM6
V
DS
600 V
R
DS(on)
max.
240 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
15 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STB22N60DM6
Product summary
Order code STB22N60DM6
Marking
Package
Packing
22N60DM6
D²PAK
Tape and reel
DS12932 - Rev 2 - September 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STB22N60DM6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
GS
D
Parameter
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT dv/dt
(2) di/dt (2)
dv/dt
(3)
T stg
T j
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 15 A, V
DS (peak)
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 480 V
Table 2. Thermal data
Symbol
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Parameter
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
±25
15
9.5
42
130
100
1000
100
-55 to 150
Unit
V
A
A
A
W
V/ns
A/μs
V/ns
°C
Value
0.96
30
Value
3.5
320
Unit
°C/W
°C/W
Unit
A mJ
DS12932 - Rev 2 page 2/15
2
STB22N60DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
Zero gate voltage drain current
Gate-body leakage current
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 7.5 A
1. Defined by design, not subject to production test.
Min.
600
Typ.
Max.
1
Unit
V
µA
3.25
4
200
100
±5
4.75
240
µA
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q
Q gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DS
GS
Test conditions
= 100 V, f = 1 MHz,
= 0 V
V
DS
= 0 to 480 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 480 V, I
D
= 15 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
-
-
Typ.
800
75
4.7
157
5.8
20.6
5.3
10.5
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 7.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
11.5
6.4
8
35.6
Max.
-
-
-
-
Unit ns ns ns ns
DS12932 - Rev 2 page 3/15
STB22N60DM6
Electrical characteristics
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Source drain diode
Test conditions
V
GS
= 0 V, I
SD
= 15 A
I
SD
= 15 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 15 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
-
-
-
Min.
-
-
-
-
-
-
Typ.
88
0.299
6.8
160
0.864
10.8
Max.
15
42
1.6
Unit
A
A
V ns
µC
A ns
µC
A
DS12932 - Rev 2 page 4/15
STB22N60DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG130220191113SOA
10 1
10
10
0
-1
10 -2
10 -1
Operation in this area is limited by R
DS(on) t p
= 10µs t p
= 100µs t p
= 1ms
T
T j
≤150 °C c
= 25°C single pulse
10 0 10 1 t p
= 10ms
10 2
V
DS
(V)
24
18
12
I
D
(A)
36
Figure 3. Output characteristics
GADG110220191516OCH
V
GS
= 10 V
V
GS
= 9 V
V
GS
= 8 V
30
V
GS
= 7 V
6
0
0 3 6 9
V
GS
= 6 V
12 15 18 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
DS
(V)
600
GADG110220191517QVG V
GS
(V)
V
DD
= 480 V, I
D
= 15 A
12
500
Q g
10
400
Q gs
300
200
V
DS
Q gd
8
6
4
100
0
0 4 8 12 16 20 24
2
Q
0 g
(nC)
Figure 2. Normalized thermal impedance
30
24
18
12
I
D
(A)
36
Figure 4. Transfer characteristics
GADG110220191516TCH
V
DS
= 18 V
6
0
3 4 5 6 7 8 9 V
GS
(V)
C
(pF)
Figure 6. Capacitance variations
GADG110220191516CVR
10 3
C
ISS
10 2
10 1
C
OSS
C
RSS
10 0
10 0 10 1 10 2
V
DS
(V)
DS12932 - Rev 2 page 5/15
Figure 7. Static drain-source on-resistance
R
DS(on)
(mΩ)
GADG110220191515RID
215
210
205
200
195
190
0 3
V
GS
= 10 V
6 9 12 15 I
D
(A)
Figure 9. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GADG191220180856VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25
I
D
= 250 µA
25 75 125 T j
(°C)
Figure 11. Output capacitance stored energy
E
(μJ)
7
GADG110220191544EOS
4
3
6
5
2
1
0
0 100 200 300 400 500 600 V
DS
(V)
STB22N60DM6
Electrical characteristics (curves)
Figure 8. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG191220180856RON
2.5
2.0
1.5
1.0
0.5
0.0
-75 -25
V
GS
= 10 V
25 75 125 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GADG191220180856BDV
1.10
I
D
= 1 mA 1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T j
(°C)
Figure 12. Source-drain diode forward characteristics
V
SD
(V)
GADG110220191515SDF
1.0
T
J
= -50 °C
T
J
= 25 °C
0.9
0.8
0.7
0.6
0.5
0 3 6 9
T
J
= 150 °C
12 15 I
SD
(A)
DS12932 - Rev 2 page 6/15
STB22N60DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF V
DD
D.U.T.
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12932 - Rev 2 page 7/15
4
4.1
STB22N60DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D²PAK (TO-263) type A package information
Figure 19. D²PAK (TO-263) type A package outline
DS12932 - Rev 2
0079457_26 page 8/15
DS12932 - Rev 2
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
STB22N60DM6
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.30
6.85
7.75
1.30
8.50
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
8.70
7.25
page 9/15
DS12932 - Rev 2
STB22N60DM6
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint_26 page 10/15
4.2
D²PAK packing information
Figure 21. D²PAK tape outline
STB22N60DM6
D²PAK packing information
DS12932 - Rev 2 page 11/15
DS12932 - Rev 2
A
STB22N60DM6
D²PAK packing information
D
B
Full radius
Figure 22. D²PAK reel outline
T
40mm min. access hole at slot location
Tape slot in core for tape start
2.5mm min.width
C
N
G measured at hub
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 9. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 12/15
Revision history
Date
21-Feb-2019
09-Sep-2020
Table 10. Document revision history
Version
1
2
Changes
First release.
Modified Table 1. Absolute maximum ratings
.
STB22N60DM6
DS12932 - Rev 2 page 13/15
STB22N60DM6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS12932 - Rev 2 page 14/15
STB22N60DM6
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© 2020 STMicroelectronics – All rights reserved
DS12932 - Rev 2 page 15/15
