STGP20IH65DF
Datasheet
Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT
in a TO‑220 package
Features
TAB
1
2
3
TO-220
C(2, TAB)
•
•
Designed for soft-commutation
Maximum junction temperature: TJ = 175 °C
•
VCE(sat) = 1.55 V (typ.) @ IC = 20 A
•
•
•
•
•
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient
Applications
G(1)
•
•
•
E(3)
Induction heating
Resonant converters
Microwave ovens
NG1E3C2T
Description
The newest IGBT 650 V soft-switching IH series has been developed using
an advanced proprietary trench gate field-stop structure, whose performance
is optimized both in conduction and switching losses for soft commutation. A
freewheeling diode with a low drop forward voltage is included. The result is
a product specifically designed to maximize efficiency for any resonant and softswitching applications.
Product status link
STGP20IH65DF
Product summary
Order code
STGP20IH65DF
Marking
G20IH65DF
Package
TO-220
Packing
Tube
DS13672 - Rev 1 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STGP20IH65DF
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
40
Continuous collector current at TC = 100 °C
20
Pulsed collector current
60
Gate-emitter voltage
±20
Transient gate-emitter voltage (tp ≤ 10 μs)
±30
Continuous forward current at TC = 25 °C
20
Continuous forward current at TC = 100 °C
10
IFP(1)
Pulsed forward current
60
PTOT
Total power dissipation at TC = 25 °C
159
TSTG
Storage temperature range
- 55 to 150
Operating junction temperature range
- 55 to 175
VCES
IC
(1)
ICP
VGE
IF
TJ
Parameter
A
V
A
W
°C
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
RthJC
RthJA
DS13672 - Rev 1
Parameter
Value
Thermal resistance, junction-to-case IGBT
0.94
Thermal resistance, junction-to-case diode
2.08
Thermal resistance, junction-to-ambient
62.5
Unit
°C/W
page 2/15
STGP20IH65DF
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
Parameter
Test conditions
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 250 μA
Min.
VGE = 15 V, IC = 20 A,
Forward on-voltage
IF = 10 A
1.50
IF = 10 A, TJ = 125 °C
1.35
IF = 10 A, TJ = 175 °C
1.25
IF = 20 A
1.85
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
V
1.95
TJ = 175 °C
VF
2.05
1.80
TJ = 125 °C
Unit
V
1.55
VGE = 15 V, IC = 20 A,
VCE(sat)
Max.
650
VGE = 15 V, IC = 20 A
Collector-emitter saturation
voltage
Typ.
5
6
2.15
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
Min.
Typ.
Max.
-
1000
-
-
62
-
-
25
-
Qg
Total gate charge
VCC = 520 V, IC = 20 A,
-
56
-
Qge
Gate-emitter charge
VGE = 0 to 15 V
-
9.6
-
Gate-collector charge
(see Figure 23. Gate charge test
circuit)
-
26.5
-
Qgc
DS13672 - Rev 1
Parameter
pF
nC
page 3/15
STGP20IH65DF
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(off)
Parameter
Turn-off delay time
Test conditions
VCC = 400 V, IC = 20 A,
Min.
Typ.
Max.
-
121
-
Unit
VGE = 15 V, RG = 22 Ω
tf
td(off)
Current fall time
(see Figure 21. Test circuit for
inductive load switching)
-
38
-
Turn-off delay time
VCC = 400 V, IC = 20 A,
-
140
-
-
90
-
Min.
Typ.
Max.
-
110
-
ns
VGE = 15 V, RG = 22 Ω,
tf
Current fall time
TJ = 175 °C
(see Figure 21. Test circuit for
inductive load switching)
Table 6. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
Unit
VCC = 320 V, RG = 10 Ω,
IC = 20 A, L = 100 μH,
Csnub = 22 nF
Eoff(1)
Turn-off switching energy
(see Figure 22. Test circuit for
snubbed inductive load switching)
μJ
VCC = 320 V, RG = 10 Ω,
IC = 20 A, L = 100 μH,
Csnub = 22 nF, TJ = 175 °C
-
230
-
(see Figure 22. Test circuit for
snubbed inductive load switching)
1. Including the tail of the collector current.
DS13672 - Rev 1
page 4/15
STGP20IH65DF
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
PTOT
(W)
160
GADG100420200844PDT
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 2. Collector current vs case temperature
IC
(A)
40
120
30
80
20
40
10
0
25
75
125
175
TC (°C)
Figure 3. Output characteristics (TJ = 25 °C)
IC
(A)
GADG100420200845OC25
VGE = 15 V
11 V
50
40
13 V
0
25
IC
(A)
10
10
7V
3
4
5
VCE (V)
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
(V)
GADG100420200846VCET
VGE = 15 V
GADG100420200845OC175
11 V
13 V
9V
7V
1
2
3
4
5
VCE (V)
Figure 6. VCE(sat) vs collector current
VCE(sat)
(V)
GADG100420200846VCEC
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
2.0
IC = 20 V
1.6
1.6
IC = 10 V
1.2
DS13672 - Rev 1
TC (°C)
VGE = 15 V
2.4
IC = 40 V
2.0
0.8
-50
0
0
2.8
2.4
175
30
20
2
125
Figure 4. Output characteristics (TJ = 175 °C)
20
2.8
75
40
9V
1
VGE ≥ 15 V, TJ ≤ 175 °C
50
30
0
0
GADG100420200844CCT
0
50
100
150
TJ = -40 °C
1.2
TJ (°C)
0.8
0
10
20
30
40
50
IC (A)
page 5/15
STGP20IH65DF
Electrical characteristics (curves)
Figure 7. Forward bias safe operating area
IC
(A)
IC
(A)
IGBT100420200847FSOA
tp = 1 µs
tp = 10 µs
10 1
Figure 8. Transfer characteristics
50
GADG170420201008TCH
VCE = 6 V
40
tp = 100 µs
30
TJ = 175 °C
tp = 1 ms
10 0
20
Single pulse, TC = 25 °C,
TJ ≤ 175 °C, VGE = 15 V
10 -1
10 0
10 1
10
VCE (V)
10 2
Figure 9. Diode VF vs forward current
VF
(V)
TJ = 25 °C
GADG100420200852DVF
3.0
0
5
6
7
VGE(th)
(Norm.)
10
VGE (V)
IGBT100820181016NVGE
VCE = VGE
IC = 1 mA
E
TJ = 25 °C
1.0
TJ = -40 °C
2.0
9
Figure 10. Normalized VGE(th) vs junction temperature
1.1
2.5
8
0.9
1.5
TJ = 175 °C
0.8
1.0
0.7
0.5
0.0
0
10
20
30
IF (A)
Figure 11. Normalized V(BR)CES vs junction temperature
V(BR)CES
(Norm.)
IGBT100820181016NVBR
1.08
0.6
-50
0
50
100
150
Figure 12. Capacitance variations
C
(pF)
GADG100420200853CVR
Cies
10 3
IC = 250 μA
TJ (°C)
1.04
10 2
1.00
10 1
0.96
0.92
-50
DS13672 - Rev 1
0
50
100
150
TJ (°C)
10 0
10 -1
Coes
Cres
f = 1 MHz
10 0
10 1
10 2
VCE (V)
page 6/15
STGP20IH65DF
Electrical characteristics (curves)
Figure 13. Gate charge vs gate-emitter voltage
GADG170420201009GCGE
VGE
(V) VCC = 520 V, IC = 20 A,
IG = 1.3 mA
15
Figure 14. Switching energy vs collector current
GADG100420200853SLC
Eoff
(mJ) VCC = 400 V, RG = 22 Ω,
VGE = 15 V, TJ=175 ℃
0.8
12
0.6
9
Eoff
0.4
6
0.2
3
0
0
15
30
45
60
Qg (nC)
Figure 15. Switching energy vs temperature
Eoff
(mJ)
0.0
0
0.5
20
30
40
IC (A)
Figure 16. Switching energy vs collector emitter voltage
Eoff
(mJ)
GADG100420200854SLT
VCC = 400 V, IC = 20 A,
Rg = 22 Ω, VGE = 15 V
10
GADG100420200856SLV
IC = 20 A, Rg = 22 Ω,
VGE = 15 V, TJ=175 °C
0.6
0.4
0.5
Eoff
Eoff
0.3
0.4
0.2
0.3
0.1
0
50
100
150
TJ (°C)
Figure 17. Switching times vs collector current
GADG100420200857STC
t
(ns) VCC = 400 V, RG = 22 Ω,
VGE = 15 V, TJ=175 ℃
250
350
VCE (V)
Figure 18. Switching energy vs snubber capacitance
GADG170420201024SSC
Eoff
(mJ) VCC = 320 V, IC = 20 A,
Rg = 10 Ω, VGE = 15 V
0.2
102
450
0.3
td(off)
103
0.2
150
TJ = 175 °C
tf
0.1
101
0
DS13672 - Rev 1
10
20
30
40
IC (A)
0.0
0
TJ = 25 °C
20
40
60
80
100
Csnub (nF)
page 7/15
STGP20IH65DF
Electrical characteristics (curves)
Figure 19. Thermal impedance for IGBT
Figure 20. Thermal impedance for diode
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
DS13672 - Rev 1
-4
10
-3
10
-2
10
-1
10
tp (s)
page 8/15
STGP20IH65DF
Test circuits
3
Test circuits
Figure 21. Test circuit for inductive load switching
C
A
Figure 22. Test circuit for snubbed inductive load
switching
A
L=100 µH
G
E
B
B
G
+
RG
3.3
µF
C
VCC
1000
µF
D.U.T
E
AM01504v1
AM17096v1
Figure 24. Switching waveform
Figure 23. Gate charge test circuit
VCC
RL
90%
Vi ≤ VGMAX
IG = CONST
100 Ω
10%
VG
D.U.T.
2200
μF
2.7 kΩ
90%
VCE
10%
tr(Voff)
tcross
90%
47 kΩ
IC
td(on)
ton
PW
10%
tf
toff
1 kΩ
GADG160420181048IG
DS13672 - Rev 1
td(off)
tr(Ion)
AM01506v1
page 9/15
STGP20IH65DF
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS13672 - Rev 1
page 10/15
STGP20IH65DF
TO-220 type H package information
4.1
TO-220 type H package information
Figure 25. TO-220 type H package outline
0015988_23_H
DS13672 - Rev 1
page 11/15
STGP20IH65DF
TO-220 type H package information
Table 7. TO-220 type H mechanical data
Dim.
Min.
Typ.
Max.
A
4.40
4.45
4.50
A1
1.22
A2
2.49
2.59
2.69
A3
1.17
1.27
1.37
b
0.78
0.87
b2
1.25
1.34
b4
1.20
1.29
1.32
b6
1.50
b7
1.45
c
0.49
D
15.40
15.50
15.60
D1
9.05
9.15
9.25
E
10.08
10.18
10.28
e
2.44
2.54
2.64
e1
4.98
5.08
5.18
H1
6.25
6.35
6.45
L
13.20
13.40
13.60
L1
3.50
3.70
3.90
L2
16.30
16.40
16.50
L3
28.70
28.90
29.10
øP
3.75
3.80
3.85
Q
2.70
2.80
2.90
0.03
0.10
Slug flatness
DS13672 - Rev 1
Milimeters
0.56
page 12/15
STGP20IH65DF
Revision history
Table 8. Document revision history
DS13672 - Rev 1
Date
Revision
02-Mar-2021
1
Changes
First release.
page 13/15
STGP20IH65DF
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS13672 - Rev 1
page 14/15
STGP20IH65DF
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DS13672 - Rev 1
page 15/15
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