STF10N60M2
Datasheet
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package
G(1)
TO-220FP
D(2)
1
2
3
S(3)
AM15572v1_no_tab
Features
Order code
STF10N60M2
V
DS
at T
Jmax.
650 V
• Extremely low gate charge
• Excellent output capacitance (C oss
) profile
• 100% avalanche tested
• Zener-protected
R
DS(on)
max.
0.60 Ω
I
D
7.5 A
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link
STF10N60M2
Product summary
Order code
Marking
Package
Packing
STF10N60M2
10N60M2
TO-220FP
Tube
DS9705 - Rev 5 - February 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STF10N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
I
V
GS
D
(1)
Parameter
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(2)
P
TOT
dv/dt (3)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
dv/dt (4)
V
ISO
(5)
T stg
T j
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three leads to external heat sink
Storage temperature range
Operating junction temperature range
1. Limited by package.
2. Pulse limited by safe operating area.
3. I
SD
≤ 7.5 A, di/dt ≤ 400 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 400 V
4. V
DS
≤ 480 V.
5. t = 1 s; T
C
= 25 °C.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Table 3. Avalanche characteristics
Symbol
I
AR
(1)
E
AS
(2)
Single pulse avalanche energy
Parameter
Avalanche current, repetitive or not repetitive
1. Pulse width limited by T jmax
.
2. Starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Value
±25
7.5
4.9
30
25
15
50
2500
-55 to 150
Unit
V
A
A
W
V/ns
V
°C
Value Unit
5
°C/W
62.5
Value Unit
1.5
A
110 mJ
DS9705 - Rev 5 page 2/12
2
STF10N60M2
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
1. Defined by design, not subject to production test.
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V, T case
= 125 °C (1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 3 A
Min.
Typ.
Max.
Unit
600 V
1
100
µA
2 3
±10 µA
4
0.55
0.60
V
Ω
Table 5. Dynamic
Symbol
C
C
C iss oss rss
C oss eq.
R
G
Q g
Q gs
Q gd
(1)
Parameter
Input capacitance
Gate-source charge
Gate-drain charge
Test conditions
Output capacitance
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance
V
DS
= 0 to 480 V, V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
GS
= 0 V
Total gate charge
V
DD
= 480 V, I
D
= 7.5 A, V
GS
= 0 to 10 V (see )
Figure 14. Test circuit for gate charge behavior
Min.
-
-
-
-
-
-
-
-
Typ.
400
22
0.84
83
6.4
13.5
2.1
7.2
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 3.75 A R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 13. Test circuit for resistive load switching times
and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
8.8
-
-
-
-
8
32.5
13.2
-
-
ns
DS9705 - Rev 5 page 3/12
STF10N60M2
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
I
SDM
V
SD
I
I
SD t
Q
RRM t
Q rr rr
(1)
rr rr
(2)
(3)
RRM
Parameter
Source-drain current
Test conditions
Source-drain current
(pulsed)
Forward on voltage V
GS
= 0 V, I
SD
= 7.5 A
Reverse recovery time
Reverse recovery charge
I
SD
= 7.5 A, di/dt = 100 A/µs, V
DD
= 60 V (see )
Figure 15. Test circuit for inductive load switching and diode recovery times
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
T
SD j
= 7.5 A, di/dt = 100 A/µs, V
DD
= 60 V,
= 150 °C (see ) Figure 15. Test circuit for inductive load switching and diode recovery times
1. Limited by package.
2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Min.
Typ.
Max.
Unit
7.5
A
30 A
-
-
270
1.6
V ns
-
-
-
-
2
14.4
376
2.8
15
µC
A ns
µC
A
DS9705 - Rev 5 page 4/12
STF10N60M2
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area
10 2
ID
(A)
I
DM
10 1
Operation in this area is limited by R DS(on)
10 0
RDS(on) max.
10 -1 single pulse, T
C
= 25°C,
T
J
≤ 150°C, V
GS
= 10 V tp= 1 µs tp= 10 µs tp= 100 µs tp= 1 ms tp= 10 ms
10 -2
10 -1 10 0 10 1
V(BR)DSS
10 2 VDS (V)
10
8
6
4
2
0
0
I
D
(A)
14
12
Figure 3. Output characteristics
AM15823v1
V GS =7, 8, 9, 10V
6V
5 10 15
5V
20
4V
V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V GS
(V)
12 V
DS
10
V
DD
=480V
I
D
=7.5A
AM15825v1
V DS
(V)
500
400
8
300
6
4
200
100
2
0
0 2 4 6 8 10 12
0
Q g (nC)
Figure 2. Maximum transient thermal impedance
GADG220120211246ZTH ZthJC
(C/W) duty = 0.5
0.4
0.3
10 0
0.2
0.1
0.05
10 -1
Single pulse
10 -2
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
4
2
0
0
10
8
6
I D
(A)
14
12
Figure 4. Transfer characteristics
AM15824v1
V
DS
=18V
2 4 6 8 10 V GS (V)
Figure 6. Static drain-source on-resistance
AM15826v1 R
DS(on)
(Ω)
0.58
V
GS
=10 V
0.57
0.56
0.55
0.54
0.53
1 2 3 4 5 6 7 I
D
(A)
DS9705 - Rev 5 page 5/12
C
(pF)
Figure 7. Capacitance variations
AM15827v1
1000
C iss
100
10 f = 1 MHz
C oss
1 C rss
0.1
0.1
1 10 100 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R DS(on)
(norm)
2.5
2.3
2.1
1.9
V GS =10 V
AM15829v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 T J (°C)
Figure 11. Source-drain diode forward characteristics
AM15830v1
V SD
(V)
1.4
1.2
1.0
T J =-50°C
0.8
0.6
0.4
0.2
0.0
0 1 2
T J =150°C
3 4 5
T J =25°C
6 7 I SD (A)
STF10N60M2
Electrical characteristics curves
Figure 8. Normalized gate threshold voltage vs temperature
V GS(th)
(norm)
AM15828v1
ID=250 µA
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 T
J
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
AM15831v1
V
(BR)DSS
norm
1.11
1.09
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25
I
D
=1mA
0 25 50 75 100 125 T J (°C)
Figure 12. Output capacitance stored energy
AM15832v1
Eoss
(µJ)
3
2
1
0
0 100 200 300 400 500 600 V DS (V)
DS9705 - Rev 5 page 6/12
STF10N60M2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS9705 - Rev 5 page 7/12
4
4.1
STF10N60M2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220FP package information
Figure 19. TO-220FP package outline
DS9705 - Rev 5
7012510_Rev_13_B page 8/12
DS9705 - Rev 5
Dim.
F1
F2
G
G1
H
A
B
D
E
F
L5
L6
L7
Dia
L2
L3
L4
Table 8. TO-220FP package mechanical data mm
Typ.
Min.
1.15
1.15
4.95
2.40
10.00
4.40
2.50
2.50
0.45
0.75
16.00
28.60
9.80
2.90
15.90
9.00
3.00
STF10N60M2
TO-220FP package information
Max.
1.70
1.70
5.20
2.70
10.40
4.60
2.70
2.75
0.70
1.00
30.60
10.60
3.60
16.40
9.30
3.20
page 9/12
STF10N60M2
Revision history
Table 9. Document revision history
Date
29-May-2013
14-Oct-2013
06-Dec-2013
09-Mar-2017
01-Feb-2021
Revision
1
2
3
4
5
Changes
First release.
Modified: R
G
value in Table 6
Minor text changes
Added: I 2 PAKFP package
– Modified: title
– Modified: R
DS(on)
typical values in Table 5
– Modified: R
G
value in Table 6
– Modified: Figure 7 and I
D
value in Figure 10
– Added: Table 10 , and Figure 21
– Minor text changes
The part number STFI10N60M2 has been moved to a separate datasheet and this document has been updated accordingly.
Updated the title and the description in cover page.
Updated Table 3. Avalanche characteristics
.
Minor text changes.
Updated Figure 1
and
Figure 2 .
Minor text changes.
DS9705 - Rev 5 page 10/12
STF10N60M2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS9705 - Rev 5 page 11/12
STF10N60M2
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DS9705 - Rev 5 page 12/12
