STF5N52U
Datasheet
N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™
Power MOSFET in a TO-220FP package
G(1)
TO-220FP
D(2)
S(3)
1
2
3
Features
Order code
STF5N52U
V
DS
525 V
• Outstanding dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitances
• Very low R
DS(on)
• Extremely low t rr
R
DS(on)
max.
1.50 Ω
I
D
4.4 A
P
TOT
25 W
AM15572v1_no_tab
Applications
• Switching applications
Description
This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
Product status link
STF5N52U
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Product summary
Order code STF5N52U
Marking 5N52U
Package
Packing
TO-220FP
Tube
DS12943 - Rev 1 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STF5N52U
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate- source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Parameter
= 25 °C
= 100 °C
V
ISO
T stg
T j
ESD
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s; T
C
=25 °C)
Storage temperature range
Operating junction temperature range
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
1. Pulse width limited by safe operating area.
2. I
SD
≤ 4.4 A, di/dt ≤ 400 A/µs, V
DS peak
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±30
4.4
2.8
17.6
25
20
2.5
-55 to 150
2.8
Value
5
62.5
Unit
°C/W
Unit
V
A
A
W
V/ns kV
°C kV
Table 3. Avalanche characteristics
Symbol Parameter Value
4.4
I
AR
Avalanche current, repetitive or non-repetitive (pulse width limited by T jmax
)
E
AS
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V) 170
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Unit
A mJ
DS12943 - Rev 1 page 2/13
STF5N52U
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 525 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 525 V,
T
C
= 125 °C
(1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 50 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 2.2 A
1. Defined by design, not subject to production test.
Min.
525
3
Typ.
Max.
3.75
1.25
10
500
±10
4.5
1.50
Unit
V
µA
µA
µA
V
Ω
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DS
= 0 V to 420 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 416 V, I
D
= 4.4 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
-
-
-
Min.
-
-
-
-
-
Typ.
529
71
13.4
11
6
16.9
4.2
8.4
-
-
-
Max.
-
-
-
-
nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS
DS
increases from 0
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Table 6. Switching times
Ω nC nC
Unit pF pF pF pF
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Dynamic
Test conditions
V
DD
= 260 V, I
D
= 2.2 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
11.4
13.6
23.1
15
Max.
-
-
-
-
Unit ns
DS12943 - Rev 1 page 3/13
STF5N52U
Electrical characteristics
Table 7. Source drain diode
Symbol
I
SD
I
SDM
(1)
I
I
V t
Q
RRM t
Q
SD rr rr rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Test conditions
V
GS
= 0 V, I
SD
= 4.4 A
I
SD
= 4.4 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 4.4 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
Min.
-
-
-
-
-
-
-
-
3.5
120
266
4.5
Typ.
Max.
4.4
17.6
1.6
55
95
Unit
A
A
V ns nC
A ns nC
A
Symbol
V
(BR)GSO
Table 8. Source drain diode
Parameter
Gate-source breakdown voltage
Test conditions
I
GS
= ± 1mA, I
D
= 0 V
Min.
30
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
Obsolete Product(s) - Obsolete Product(s)
DS12943 - Rev 1 page 4/13
STF5N52U
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 3. Output characteristics
Figure 2. Thermal impedance
GC20540_ZTH
K
δ=0.5
δ=0.2
0.1
10 -1 0.05
0.02
0.01
Single pulse
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p (s)
Figure 4. Transfer characteristics
Figure 5. Normalized V
(BR)DSS
vs temperature
Obsolete Product(s) - Obsolete Product(s)
(BR)
Figure 6. Static drain-source on-resistance
DS12943 - Rev 1 page 5/13
Figure 7. Gate charge vs gate-source voltage
STF5N52U
Electrical characteristics (curves)
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs temperature
Figure 10. Normalized on-resistance vs temperature
0.6
Figure 11. Source-drain diode forward characteristics Figure 12. Maximum avalanche energy vs temperature
Obsolete Product(s) - Obsolete Product(s)
DS12943 - Rev 1 page 6/13
STF5N52U
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12943 - Rev 1 page 7/13
4
STF5N52U
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DS12943 - Rev 1 page 8/13
4.1
TO-220FP package information
Figure 19. TO-220FP package outline
STF5N52U
TO-220FP package information
Obsolete Product(s) - Obsolete Product(s)
7012510_Rev_12_B page 9/13 DS12943 - Rev 1
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
Table 9. TO-220FP package mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
STF5N52U
TO-220FP package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Obsolete Product(s) - Obsolete Product(s)
DS12943 - Rev 1 page 10/13
STF5N52U
Revision history
Date
05-Mar-2019
Table 10. Document revision history
Version
1
Changes
First release. Part number previously included in datasheet DocID15684.
Obsolete Product(s) - Obsolete Product(s)
DS12943 - Rev 1 page 11/13
STF5N52U
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
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DS12943 - Rev 1 page 12/13
STF5N52U
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DS12943 - Rev 1 page 13/13
