STMicroelectronics STD5N52K3 Datasheet
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STD5N52K3, STF5N52K3, STU5N52K3
Datasheet
N-channel 525 V, 1.2 Ω typ., 4.4 A MDmesh™ K3 Power MOSFETs in
DPAK, TO-220FP and IPAK packages
G(1)
D(2, TAB)
S(3)
Product status link
STD5N52K3
STF5N52K3
STU5N52K3
AM01475V1
Features
Order code V
DS
R
DS(on) max.
STD5N52K3
STF5N52K3 525 V 1.5 Ω
STU5N52K3
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
I
D
4.4 A
Package
DPAK
TO-220FP
IPAK
Applications
• Switching applications
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
DS6663 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD5N52K3, STF5N52K3, STU5N52K3
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
DPAK, IPAK
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
= 25 °C
= 100 °C
V
ISO
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, T
C
= 25 °C)
Peak diode recovery voltage slope dv/dt
T j
T stg
Operating junction temperature range
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤ 4.4 A, di/dt ≤ 100 A/μs, V
DSpeak
≤ V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
4.4
2.77
17.6
70
Value
525
±30
12
-55 to 150
TO-220FP
2.77
17.6
25
2.5
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
DPAK
1.79
50
Value
TO-220FP
5
62.5
Table 3. Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
1. Pulse width limited by T j
max.
2. Starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Value
2.2
100
IPAK
1.79
100
Unit
°C/W
°C/W
°C/W
Unit
A mJ
Unit
A
A
W
V
V
A kV
V/ns
°C
DS6663 - Rev 3 page 2/27
2
STD5N52K3, STF5N52K3, STU5N52K3
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
I
D
= 1 mA, V
Test conditions
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 525 V
V
GS
= 0 V, V
DS
= 525 V, T
C
= 125 °C
V
R
I
GSS
GS(th)
DS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on resistance
V
V
V
DS
DS
GS
= 0 V, V
GS
= V
GS
, I
D
= 10 V, I
1. Defined by design, not subject to production test.
D
= ±20 V
= 50 µA
= 2.2 A
Min.
525
3
Typ.
Max.
3.75
1.2
1
50
±10
4.5
1.5
µA
V
Ω
Unit
V
µA
µA
Table 5. Dynamic
Symbol
C iss
C oss
Parameter
Input capacitance
Output capacitance
Test conditions Min.
Typ.
545
45
Max.
Unit
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V pF
C rss
C oss eq.
Reverse transfer capacitance
Equivalent capacitance time related
V
DS
= 0 to 420 V, V
GS
= 0 V -
8
33 pF
R
G
Q g
Q gs
Q gd
Intrinsic gate resistance f = 1 MHz open drain
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 420 V, I
D
= 4.4 A, V
GS
= 0 to 10 V
(see Figure 16. Test circuit for gate charge behavior
)
-
4.7
17
3
10
-
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 262.5 V, I
D
= 2.2 A,
R
G
= 4.7 Ω, V
GS
= 10 V
)
Min.
-
Typ.
9
11
29
16
Max.
-
Unit ns
DS6663 - Rev 3 page 3/27
DS6663 - Rev 3
STD5N52K3, STF5N52K3, STU5N52K3
Electrical characteristics
Table 7. Source drain diode
Symbol
I
I
SD
SDM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Test conditions
V
SD
I
I t
Q rr rr
RRM t
Q rr rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.4 A, V
GS
= 0 V
I
SD
= 4.4 A, di/dt = 100 A/µs
V
DD
= 60 V (see
Figure 17. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 4.4 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C(see
Figure 17. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Min.
-
-
-
-
210
1.3
12
240
1.6
13
Typ.
Max.
4.4
17.6
1.6
Unit
A
A ns
μC
A
V ns
μC
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 8. Gate-source Zener diode
Test conditions
I gs
= ±1 mA, I
D
= 0 A
Min.
±30
Typ.
Max.
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/27
STD5N52K3, STF5N52K3, STU5N52K3
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for DPAK and IPAK
AM08839v1
I
D
(A)
10
1
Op er
Lim ati on ite d
in
th by m a is are ax
R
DS is
(o n)
10µs
100µs
1ms
10ms
0.1
0.01
0.1 1 10
Tj=150°C
Tc=25°C
S ingle puls e
100 V
DS
(V)
Figure 3. Safe operating area for TO-220FP
AM08838v1 I
D
(A)
10
1
0.1
0.01
0.1
Op er
Lim ati on ite d is
in
th by m ax a are
R
DS is
(o n)
1 10
Tj=150°C
Tc=25°C
S ingle puls e
100 V DS (V)
10µs
100µs
1ms
10ms
I
D
(A)
10
Figure 5. Output characterisics
AM08840v1
V
GS
=10V
7V
8
6
4
6V
2
0
0 5 10 15 20 25
5V
V DS (V)
Figure 2. Thermal impedance for DPAK and IPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Thermal impedance for TO-220FP
K GC20940
10 -1
10 -2
10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
I D
(A)
Figure 6. Transfer characteristics
AM08841v1
7
V DS =15V
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 V GS (V)
DS6663 - Rev 3 page 5/27
STD5N52K3, STF5N52K3, STU5N52K3
Electrical characteristics curves
Figure 7. Gate charge vs gate-source voltage
V GS
12
V
DS
10
8
6
4
2
0
0 5
V DD =420V
I D =4.4A
10 15
AM08844v1 V DS
400
350
300
250
200
150
100
25 Q g
50
0
C
(pF)
Figure 9. Capacitance variations
AM08845v1
1000
Cis s
100
10
1
0.1 1 10
Cos s
Crs s
100 V
DS
(V)
Figure 11. Normalized on-resistance vs temperature
R
DS (on)
(norm)
AM08847v1
2.5
2.0
1.5
1.0
0.5
0
-75 -25 25 75 125 T
J
(°C)
Figure 8. Static drain-source on-resistance
AM08843v1
R DS (on)
(Ω)
1.45
1.40
1.35
1.30
1.25
1.20
V GS =10V
1.15
1.10
1.05
1.00
0 1.0
2.0 3.0 4.0 I D (A)
Figure 10. Normalized gate threshold voltage vs temperature
AM08846v1
V GS (th)
(norm)
1.10
I
D
=50µA
1.00
0.90
0.80
0.70
-75 -25 25 75 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM08848v1
V
S D
(V)
0.9
0.8
T
J
=-50°C
0.7
0.6
0.5
T J =150°C
0.4
0.3
0.2
0.1
0
0 1 2 3 4
T
J
=25°C
5 I
S D
(A)
DS6663 - Rev 3 page 6/27
Figure 13. Normalized V
(BR)DSS
vs temperature
AM08842v1
V
(BR)DSS
(norm)
I D =1mA
1.10
1.05
1.00
0.95
0.90
-75 -25 25 75 125 T J (°C)
STD5N52K3, STF5N52K3, STU5N52K3
Electrical characteristics curves
Figure 14. Maximum avalanche energy vs starting T j
AM08849v1
E
AS
(mJ )
110
100 I
D
=2.2A
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 T J (°C)
DS6663 - Rev 3 page 7/27
STD5N52K3, STF5N52K3, STU5N52K3
Test circuits
3
Test circuits
Figure 15. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 16. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 18. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 19. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 20. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS6663 - Rev 3 page 8/27
4
STD5N52K3, STF5N52K3, STU5N52K3
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS6663 - Rev 3 page 9/27
4.1
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 21. DPAK (TO-252) type A2 package outline
DS6663 - Rev 3
0068772_type-A2_rev25 page 10/27
DS6663 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/27
4.2
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type C2 package information
DPAK (TO-252) type C2 package information
Figure 22. DPAK (TO-252) type C2 package outline
DS6663 - Rev 3
0068772_C2_25 page 12/27
DS6663 - Rev 3
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type C2 package information
Table 10. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 13/27
4.3
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type E package information
DPAK (TO-252) type E package information
Figure 23. DPAK (TO-252) type E package outline
DS6663 - Rev 3
0068772_type-E_rev.25
page 14/27
DS6663 - Rev 3
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) type E package information
Dim.
D
D1
E
E1 e e1
H
L
L1
L2
L4
A
A2 b b4 c c2
Table 11. DPAK (TO-252) type E mechanical data
Min.
2.18
mm
Typ.
5.97
5.21
6.35
4.32
0.65
4.95
0.46
0.46
2.286
4.572
9.94
1.50
0.89
2.74
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
10.34
1.78
1.27
1.02
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
6.73
FP_0068772_25 page 15/27
4.4
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) packing information
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
F
E
W
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
User direction of feed
R
Bending radius
AM08852v1
DS6663 - Rev 3 page 16/27
DS6663 - Rev 3
Dim.
D1
E
F
K0
P0
A0
B0
B1
D
P1
P2
R
T
W
A
D
B
STD5N52K3, STF5N52K3, STU5N52K3
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
AM06038v1
2.55
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
C
D
A
B
G
N
T
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 17/27
4.5
STD5N52K3, STF5N52K3, STU5N52K3
TO-220FP package information
TO-220FP package information
Figure 27. TO-220FP package outline
DS6663 - Rev 3
7012510_Rev_12_B page 18/27
DS6663 - Rev 3
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
STD5N52K3, STF5N52K3, STU5N52K3
TO-220FP package information
Table 13. TO-220FP package mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
page 19/27
4.6
STD5N52K3, STF5N52K3, STU5N52K3
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 28. IPAK (TO-251) type A package outline
DS6663 - Rev 3
0068771_IK_typeA_rev14 page 20/27
DS6663 - Rev 3
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD5N52K3, STF5N52K3, STU5N52K3
IPAK (TO-251) type A package information
Table 14. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 21/27
4.7
STD5N52K3, STF5N52K3, STU5N52K3
IPAK (TO-251) type C package information
IPAK (TO-251) type C package information
Figure 29. IPAK (TO-251) type C package outline
DS6663 - Rev 3
0068771_IK_typeC_rev14 page 22/27
DS6663 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1 b b2 b4 c
L2
θ1
θ2
H
L
L1
STD5N52K3, STF5N52K3, STU5N52K3
IPAK (TO-251) type C package information
Table 15. IPAK (TO-251) type C package mechanical data
Min.
2.20
0.90
0.66
mm
Typ.
2.30
1.00
5.20
6.50
4.60
2.20
4.40
5.23
0.46
0.46
6.00
16.18
9.00
0.80
0.90
3°
1°
5.33
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
3°
16.78
9.60
1.20
1.25
7°
5°
5.55
6.70
4.95
2.30
4.60
0.90
5.43
0.59
0.59
6.20
Max.
2.35
1.10
0.79
page 23/27
5
STD5N52K3, STF5N52K3, STU5N52K3
Ordering information
Ordering information
Order code
STD5N52K3
STF5N52K3
STU5N52K3
Table 16. Order codes
Marking
5N52K3
Package
DPAK
TO-220FP
IPAK
Packing
Tape and reel
Tube
DS6663 - Rev 3 page 24/27
STD5N52K3, STF5N52K3, STU5N52K3
Revision history
Date
05-Jan-2010
14-Dec-2010
21-Aug-2018 3
Table 17. Document revision history
Version
1
2
Changes
First release.
Document status promoted from preliminary data to datasheet.
The part numbers STB5N52K3 and STP5N65K3 have been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is production data.
Updated title and features in cover page.
Updated Section 1 Electrical ratings ,
Section 2 Electrical characteristics
and
.
Minor text changes.
DS6663 - Rev 3 page 25/27
STD5N52K3, STF5N52K3, STU5N52K3
Contents
Contents
DS6663 - Rev 3 page 26/27
STD5N52K3, STF5N52K3, STU5N52K3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS6663 - Rev 3 page 27/27
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