STWA70N65DM6
Datasheet
N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
G(1)
D(2, TAB)
S(3)
AM01476v1_tab
Product status link
STWA70N65DM6
Product summary
Order code
Marking
Package
Packing
STWA70N65DM6
70N65DM6
TO-247 long leads
Tube
Features
Order code
STWA70N65DM6
V
DS
650 V
R
DS(on) max
.
40 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
68 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
DS12313 - Rev 5 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STWA70N65DM6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
di/dt
(2) dv/dt (3)
T
STG
T
J
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 68 A, V
DS (peak)
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 520 V.
Parameter
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (t p
limited by T
J
max)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
±25
68
43
260
450
100
1000
100
-55 to 150
Unit
V
A
A
A
W
V/ns
A/μs
V/ns
°C
°C
Value
0.28
50
Unit
°C/W
°C/W
Value
8
1.8
Unit
A
J
DS12313 - Rev 5 page 2/12
2
STWA70N65DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V, T
C
= 125 °C (1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 μA
Static drain-source on resistance V
GS
= 10 V, I
D
= 34 A
1. Defined by design, not subject to production test.
Min.
Typ.
Max.
Unit
650 V
10
μA
100
3.25
4
36
±5
4.75
40
μA
V mΩ
Table 5. Dynamic characteristics
Symbol
C iss
C oss
C rss
C oss eq
.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
= 100 V, f = 1 MHz, V
= 0 to 520 V, V f = 1 MHz, I
V
DS
DS
DD
= 520 V, I
D
(see
D
Test conditions
= 0 A
)
GS
GS
= 0 V
= 68 A, V
GS
= 0 V
= 0 to 10 V
Figure 14. Test circuit for gate charge behavior
Min.
-
-
-
-
-
-
-
-
Typ.
4900
280
3
859
2.3
125
33
56
Max.
-
-
-
-
-
-
-
-
Unit pF
Ω nC
1. C oss eq
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 34 A,
R
G
= 4.7 Ω , V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times
and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
-
30.4
52
-
ns ns
-
107
10.8
-
ns ns
DS12313 - Rev 5 page 3/12
STWA70N65DM6
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM
I t
Q rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
I
V
GS
SD
= 0 V, I
Test conditions
SD
= 68 A
= 68 A, di/dt = 100 A/μs, V
DD
(see
= 60 V
Figure 15. Test circuit for inductive load switching and diode recovery times
I
SD
= 68 A, di/dt = 100 A/μs,
V
DD
= 60 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
)
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
68 A
260 A
170
1.08
12.7
308
4.16
1.6
-
-
-
-
-
V ns
µC
A ns
µC
27 A
DS12313 - Rev 5 page 4/12
STWA70N65DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
10 2
Figure 1. Safe operating area
I
DM
GADG280620190757SOA
Operation in this area is limited by R
DS(on) t p
= 1 µs t p
= 10 µs
V
(BR)DSS
10 1
R
DS(on)
max.
t p
= 100 µs
10 0
10 -1
10 -1
T
C
= 25 °C, T
J
≤ 150 °C single pulse
10 0 10 1 10 2 t p
= 1 ms
V
DS
(V)
Figure 2. Maximum transient thermal impedance
Z thj-c
(°C/W)
GADG280620190822ZTH
0.2
0.3
0.4
duty = 0.5
10 -1
0.1
10 -2
0.05
single pulse
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 3. Typical output characteristics
I
D
(A)
240
GADG060620191330OCH
V
GS
= 9, 10 V
200
160
120
80
40
0
0 2 4 6 8
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6 V
10 12 V
DS
(V)
Figure 4. Typical transfer characteristics
I
D
(A)
240
GADG060620191331TCH
200
160
120
80
40
0
4 5 6
V
DS
= 12 V
7 8 9 V
GS
(V)
Figure 5. Typical gate charge characteristics
V
DS
(V)
600
500
V
DD
= 520 V, I
GADG060620191331QVG
D
= 68 A
V
GS
(V)
Q g
12
10
400
Q gs
300
200
100
0
0 30
Q gd
60
8
6
4
2
90 120 150 Q
0 g
(nC)
Figure 6. Typical drain-source on-resistance
R
DS(on)
(mΩ)
39
GADG060620191329RID
38
37
36
35
34
33
0
V
GS
=10 V
10 20 30 40 50 60 I
D
(A)
DS12313 - Rev 5 page 5/12
STWA70N65DM6
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
GADG060620191330CVR
10 4
C
ISS
10 3
C
OSS
10 2 f = 1 MHz
10 1
C
RSS
10 0
10 -1 10 0 10 1 10 2
V
DS
(V)
Figure 8. Typical output capacitance stored energy
E
OSS
(µJ)
GADG060620191332EOS
50
40
30
20
10
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 9. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
1.1
GADG050620191111VTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T
J
(°C)
Figure 10. Normalized on-resistance vs. temperature
R
DS(on)
(norm.)
2.5
GADG050620191125RON
2.0
V
GS
= 10 V
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T
J
(°C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
1.10
GADG060620191329VTH
I
D
= 1 mA
1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T
J
(°C)
Figure 12. Typical reverse diode forward characteristics
V
SD
(V)
1.1
GADG060620191330SDF
T
J
= -50 °C
1.0
0.9
T
J
= 25 °C
0.8
T
J
= 150 °C
0.7
0.6
0.5
0 10 20 30 40 50 60 I
SD
(A)
DS12313 - Rev 5 page 6/12
STWA70N65DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF V
DD
D.U.T.
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12313 - Rev 5 page 7/12
4
4.1
STWA70N65DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-247 long leads package information
Figure 19. TO-247 long leads package outline
DS12313 - Rev 5
8463846_2_F page 8/12
DS12313 - Rev 5
Dim.
c
D
E
E2
E3 e
L
L1
P
Q
S
A
A1
A2 b b2 b3
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
STWA70N65DM6
TO-247 long leads package information
Table 8. TO-247 long leads package mechanical data
Min.
4.90
2.31
1.90
1.16
mm
Typ.
5.00
2.41
2.00
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
page 9/12
STWA70N65DM6
Revision history
Date
06-Dec-2017
09-Jul-2019
21-Feb-2020
16-Mar-2020
02-Jul-2020
2
3
4
5
Table 9. Document revision history
Version
1
Changes
Initial release.
Update Table 1, Table 3, Table 4, Table 5, Table 6 and Table 7 .
Added Section 2.1
Update Figure 14 .
The part number STW70N65DM6 have been moved to a separate datasheet and the document has been updated accordingly.
Updated Table 7. Source-drain diode.
Updated Table 1. Absolute maximum ratings
.
DS12313 - Rev 5 page 10/12
STWA70N65DM6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS12313 - Rev 5 page 11/12
STWA70N65DM6
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DS12313 - Rev 5 page 12/12
