G(1)
TO-220FP
1
2
3
D(2)
IRF630FP
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO
‑
220FP package
S(3)
AM01475v1_noZen_noTab
Features
Order code
IRF630FP
V
DS
200 V
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Gate charge minimized
R
DS(on)
max.
0.40 Ω
I
D
9 A
Applications
• Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated
DC-DC converters.
Product status link
IRF630FP
Obsolete Product(s) - Obsolete Product(s)
Product summary
Order code IRF630FP
Marking IRF630FP
Package
Packing
TO-220FP
Tube
DS12883 - Rev 1 - January 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DDS
V
DGR
V
GS
I
D
Parameter
Drain-source voltage (V
GS
= 0 V)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(1)
P
E
V
TOT
AS
(2)
ISO
Total power dissipation at T
C
= 25 °C
Single pulse avalanche energy
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, T
C
= 25 °C)
Drain-body diode dynamic dv/dt ruggedness
dv/dt (3)
T stg
T
J
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Starting T
J
= 25 °C, I
D
= 4.5 A
3. I
SD
= 9 A, di/dt = 520 A/μs, V
DD
= 50 V, T
J
< T
Jmax
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
6.5
36
36
110
Value
200
200
±20
9
2000
5.8
-65 to 175
Value
4.17
62.5
IRF630FP
Electrical ratings
Unit
°C/W
°C/W
A
A
W mJ
Unit
V
V
V
A
V
V/ns
°C
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 2/13
IRF630FP
Electrical characteristics
2
Electrical characteristics
T
CASE
= 25 °C unless otherwise specified
Table 3. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 200 V
Zero gate voltage drain current
Gate body leakage current
V
GS
= 0 V, V
DS
= 200 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 4.5 A
1. Defined by design, not subject to production test.
Min.
200
Typ.
Max.
1
Unit
V
µA
2 3
0.29
100
±100
4
0.40
µA nA
V
Ω
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 4. Dynamic
V
V
DS
GS
Test conditions
= 25 V, f = 1 MHz,
= 0 V
V
DD
= 160 V, I
D
= 9 A
V
GS
= 0 to 10 V
(see
Figure 13. Test circuit for gate charge behavior
)
-
-
-
Min.
-
-
-
Typ.
370
77
14
11.6
2.2
5.5
-
-
-
Max.
-
-
-
Unit pF pF pF nC nC nC
Table 5. Switching times
Symbol t d(on)
Parameter
Turn-on delay time
Test conditions
V
DD
= 100 V, I
D
= 4.5 A,
Min.
-
Typ.
5.6
Max.
Obsolete Product(s) - Obsolete Product(s)
-
R
G
= 4.7 Ω, V
GS
= 10 V t r
Rise time
(see
Figure 12. Test circuit for resistive load switching times and
Figure 17. Switching time waveform
)
2.6
-
Unit ns ns
DS12883 - Rev 1 page 3/13
IRF630FP
Electrical characteristics
Symbol
V
SD
(1)
t rr
Q rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 6. Source-drain diode
Test conditions
I
SD
= 9 A, V
GS
= 0 V
I
SD
= 9 A, di/dt = 100 A/µs,
V
DD
= 50 V
(see
Figure 17. Switching time waveform
)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
-
Typ.
118.5
393
6.6
Max.
1.5
Unit
V ns nC
A
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 4/13
IRF630FP
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
8
4
0
0
I
D
(A)
20
Figure 3. Output characteristics
GADG221120181107OCH
V
GS
= 8, 9, 10 V
V
GS
= 7 V
16
V
GS
= 6 V
12
V
GS
= 5 V
5 10 15
V
GS
= 4 V
20 V
DS
(V)
Figure 4. Transfer characteristics
4
3
2
I
D
(A)
7
V
DS
= 10 V
6
5
1
0
0 1 2
T
J
GADG221120181221TCH
= 25 °C
T
J
= 150 °C
3 4
T
J
= -55 °C
5 V
GS
(V)
Obsolete Product(s) - Obsolete Product(s)
V
GS
(V)
GADG221120181107QVG
Figure 6. Static drain-source on-resistance
R
DS(on)
(mΩ)
GADG221120181108RID
12
V
DS
= 160 V, I
D
= 9 A
325 10
8
V
GS
= 10 V
300
6
4
2
0
0 2 4 6 8 10 12 Q g
(nC)
275
250
0 1 2 3 4 5 6 7 8 9 I
D
(A)
DS12883 - Rev 1 page 5/13
IRF630FP
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GADG221120181107CVR
10 3
C
ISS
10 2
10 1
C
OSS
C
RSS
10 0
0 50 100 150 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.6
V
GS
= 10 V, I
D
= 4.5 A
GADG221120181109RON
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 175 T j
(°C)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GADG221120181109VTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-75 -25 25 75 125 175 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.12
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
0.88
-75 -25 25
GADG221120181109BDV
I
D
= 1 mA
75 125 175 T j
(°C)
Figure 11. Source-drain diode forward characteristics
Obsolete Product(s) - Obsolete Product(s)
0.9
T
J
= -55 °C
T
J
= 25 °C
0.8
0.7
0.6
0.5
0.4
0 2 4 6
T
J
= 175 °C
8 I
SD
(A)
DS12883 - Rev 1 page 6/13
IRF630FP
Test circuits
3
Test circuits
Figure 12. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 13. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 15. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 16. Unclamped inductive waveform
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 17. Switching time waveform t d(on) t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12883 - Rev 1 page 7/13
4
IRF630FP
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 8/13
4.1
TO-220FP package information
Figure 18. TO-220FP package outline
IRF630FP
TO-220FP package information
Obsolete Product(s) - Obsolete Product(s)
7012510_Rev_12_B page 9/13 DS12883 - Rev 1
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
Table 7. TO-220FP package mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
IRF630FP
TO-220FP package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 10/13
IRF630FP
Revision history
Date
10-Jan-2019
Table 8. Document revision history
Version
1
Changes
First release. This part number was previously included in datasheet DS0668.
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 11/13
IRF630FP
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Obsolete Product(s) - Obsolete Product(s)
DS12883 - Rev 1 page 12/13
IRF630FP
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
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DS12883 - Rev 1 page 13/13
