STF140N8F7
N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STF140N8F7
80 V
4.3 mΩ
64 A
35 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
TO-220FP
Figure 1: Internal schematic diagram
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
October 2014
Order code
Marking
Package
Packaging
STF140N8F7
140N8F7
TO-220FP
Tube
DocID023888 Rev 3
This is information on a product in full production.
1/12
www.st.com
Contents
STF140N8F7
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3
Test circuits ..................................................................................... 7
4
Package mechanical data ............................................................... 8
4.1
5
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TO-220FP package information ........................................................ 9
Revision history ............................................................................ 11
DocID023888 Rev 3
STF140N8F7
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
64
(1)
A
A
Drain current (continuous) at TC = 100 °C
45(1)
IDM(2)
Drain current (pulsed)
256
A
ID
PTOT
Total dissipation at TC = 25 °C
35
W
EAS(3)
Single pulse avalanche energy
515
mJ
VISO
Insulation withstand voltage (RMS) from all three leads to external heat
sink (t = 1 s, TC = 25 °C)
2.5
kV
-55 to
175
°C
Tj
Operating junction temperature
Tstg
Storage temperature
Notes:
(1)Limited
(2)Pulse
by package.
width is limited by safe operating area.
(3)Starting
Tj =25 °C, Id = 18.5 A, Vdd = 50 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
4.29
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
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Electrical characteristics
2
STF140N8F7
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0, ID = 250 µA
Min.
Typ.
Max.
80
Unit
V
VGS = 0, VDS = 80 V
1
µA
VGS = 0, VDS = 80 V,
TJ=125 °C
10
µA
Gate-source leakage
current
VDS = 0, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4.5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 32 A
3.5
4.3
mΩ
Symbol
Parameter
Min.
Typ.
Max.
Unit
-
6340
-
pF
-
1195
-
pF
-
105
-
pF
-
96
-
nC
-
30
-
nC
-
26
-
nC
Min.
Typ.
Max.
Unit
-
26
-
ns
-
51
-
ns
-
82
-
ns
-
44
-
ns
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage
Drain current
IGSS
2.5
Table 5: Dynamic
Ciss
Test conditions
Input capacitance
VGS = 0, VDS = 40 V,
f = 1 MHz
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 40 V, ID = 64 A,
VGS = 10 V
Table 6: Switching times
Symbol
td(on)
Parameter
Test conditions
Turn-on delay time
tr
Rise time
td(off)
VDD = 40 V, ID = 45 A RG = 4.7 Ω,
VGS = 10 V
Turn-off-delay time
tf
Fall time
Table 7: Source drain diode
Symbol
ISD
ISDM(1)
VSD
(2)
Parameter
Test conditions
Source-drain current
-
64
A
Source-drain current (pulsed)
-
256
A
Forward on voltage
VGS = 0, ISD = 64 A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 64 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
Notes:
4/12
(1)Pulse
width is limited by safe operating area
(2)Pulse
test: pulse duration = 300 µs, duty cycle 1.5%
DocID023888 Rev 3
-
1.2
V
-
58
ns
-
92
nC
-
3.2
A
STF140N8F7
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
K
ID
(A)
δ= 0.5
0.2
100
-1 0.1
10
0.05
10
100µs
Operation in this area is
0.02
Limited by max RDS(on)
10
1ms
Tj=175°C
Tc=25°C
1
Single pulse
10ms
Sinlge
pulse
10
0.1
0.1
1
-3
10
V DS(V)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2 10 -1 tp(s)
Figure 5: Transfer characteristics
Figure 4: Output characteristics
GIPD130920130919MT
ID
(A)
-2 0.01
ID
(A)
V GS= 10V
300
300
7V
250
V DS= 2V
250
6V
200
200
150
150
5V
100
100
50
50
4V
0
0
2
4
6
8
0
0
V DS(V)
Figure 6: Normalized V(BR)DSS vs.
temperature
V (BR)DSS
1
2
3
4
5
6
7
8
9 V GS(V)
Figure 7: Static drain-source on resistance
R DS(on)
3.52
ID= 250µA
1.04
V GS= 10V
3.51
1.02
3.50
1
3.49
0.98
3.48
0.96
0.94
-75
3.47
10
-25
0 25
75
125
20
30
40
50
60
ID(A)
175 T J(°C)
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Electrical characteristics
STF140N8F7
Figure 8: Gate charge vs. gate-source voltage
Figure 9: Capacitance variations
V GS
(V)
C
(pF)
8000
12
7000
10
C iss
6000
8
5000
6
4000
3000
4
2000
2
0
1000
0
20
40
80
60
0
0
100 Q g(nC)
10
20
30
40
50
60
C oss
C rss
70 V DS(V)
Figure 11: Normalized on resistance vs.
temperature
Figure 10: Normalized gate threshold voltage
vs. temperature
V GS(th)
R DS(on)
V GS= 10V
1.2
1.8
ID= 250µA
1.6
1
1.4
1.2
0.8
1
0.8
0.6
0.6
0.4
-75
-25
0 25
75
125
0.4
-75
175 T J(°C)
-25
0 25
75
Figure 12: Source-drain diode forward characteristics
V SD
T J= -55°C
1.1
1
0.9
T J= 25°C
0.8
T J= 175°C
0.7
0.6
20
6/12
30
40
50
60
DocID023888 Rev 3
70
80
90
ID(A)
125
175 T J(°C)
STF140N8F7
3
Test circuits
Test circuits
Figure 13: Switching times test circuit for
resistive load
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive waveform
DocID023888 Rev 3
Figure 14: Gate charge test circuit
Figure 16: Unclamped inductive load test
circuit
Figure 18: Switching time waveform
7/12
Package mechanical data
4
STF140N8F7
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
8/12
DocID023888 Rev 3
STF140N8F7
4.1
Package mechanical data
TO-220FP package information
Figure 19: TO-220FP package outline
DocID023888 Rev 3
9/12
Package mechanical data
STF140N8F7
Table 8: TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
10/12
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID023888 Rev 3
STF140N8F7
5
Revision history
Revision history
Table 9: Document revision history
Date
Revision
18-Sep-2013
1
Changes
First release.
22-Aug-2014
2
10-Oct-2014
3
The part numbers STH140N8F7-2 and STP140N8F7 have
been moved to a separate datasheet.
Modified: not found
Minor text changes
Updated Figure 3: "Thermal impedance"
DocID023888 Rev 3
11/12
STF140N8F7
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