STWA67N60DM6
Datasheet
N-channel 600 V, 45 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a
TO
‑
247 long leads package
G(1)
TO-247 long leads
D(2, TAB)
S(3)
AM01476v1_tab
Features
Order code
STWA67N60DM6
V
DS
600 V
R
DS(on)
max.
54 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
58 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STWA67N60DM6
Product summary
Order code STWA67N60DM6
Marking
Package
Packing
67N60DM6
TO-247 long leads
Tube
DS12933 - Rev 4 - June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STWA67N60DM6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Parameter
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope di/dt
(2) dv/dt (3)
T
STG
T
J
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 50 A, V
DS
(peak) < V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 480 V.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
±25
58
37
190
431
100
1000
100
-55 to 150
Value
0.29
50
Value
9
1000
Unit
°C/W
°C/W
Unit
A mJ
Unit
V
A
A
A
W
V/ns
A/μs
V/ns
°C
DS12933 - Rev 4 page 2/12
2
STWA67N60DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
1. Defined by design, not subject to production test.
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 μA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 29 A
Min.
Typ.
Max.
Unit
600 V
1
μA
100
3.25
4
45
±5
4.75
54
μA
V mΩ
Table 5. Dynamic characteristics
Symbol
C iss
C oss
C rss
C oss eq
R
G
Q g
Q
Q gs gd
.
(1)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DS
GS
Test conditions
= 100 V, f = 1 MHz,
= 0 V
V
DS
= 0 to 480 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 480 V, I
D
= 52 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior ).
Min.
-
-
-
-
-
-
-
-
Typ.
3400
280
2
520
1.5
72.5
24.5
28.5
Max.
-
-
-
-
-
-
-
-
Unit pF
Ω nC
1. C oss eq
is defined as a constant equivalent capacitance giving the same charging time as Coss when V
DS to 80% V
DSS
.
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V,
I
D
= 23.75 A, R
G
= 4.7 Ω,
V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
24.5
ns
-
32
87.5
-
ns ns
8.6
ns
DS12933 - Rev 4 page 3/12
STWA67N60DM6
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Test conditions
V
GS
= 0 V, I
SD
= 58 A
I
SD
= 47.5 A, di/dt = 100 A/μs,
V
DD
= 60 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
I
SD
= 47.5 A, di/dt = 100 A/μs,
V
DD
= 60 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
Min.
Typ.
Max.
Unit
58 A
-
-
-
125
0.6
190
1.6
-
-
A
V ns
µC
9.6
228
2.34
20.5
-
-
-
A ns
µC
A
DS12933 - Rev 4 page 4/12
STWA67N60DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
10 2
10 1
Figure 1. Safe operating area
GADG191220191203SOA
I
DM
by R
DS(on)
R
DS(on)
max.
t p
=1 µs t p
=10 µs
V
(BR)DSS t p
=100µs
10 0 t p
=1ms
10 -1
10 -2
10 -1
T
C
= 25 °C
T
J
≤ 150 °C single pulse
10 0 10 1 10 2 t p
=10ms
V
DS
(V)
Figure 3. Typical output characteristics
I
D
(A)
160
140
GADG220220190911OCH
V
GS
= 10 V
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 V
V
GS
=9 V
V
V
V
DS
GS
GS
GS
=8 V
=7 V
=6 V
(V)
Figure 5. Typical drain-source on-resistance
R
DS(on)
(mΩ)
GADG131220191108RID
V
GS
= 10 V
47
46
45
44
43
0 10 20 30 40 50 I
D
(A)
Figure 2. Maximum transient thermal impedance
Z thJC
(°C/W)
GADG131220191044ZTH duty=0.5
10 -1
10 -2
0.1
0.05
3
0.2
R thJC
= 0.29 °C/W duty = t on
/ T
4
Single pulse t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Typical transfer characteristics
I
D
(A)
160
140
120
100
80
60
40
20
0
4 5
V
DS
= 15 V
6 7
GADG220220190912TCH
8 9 V
GS
(V)
Figure 6. Typical gate charge characteristics
V
DS
(V)
600
500
V
DD
= 480 V
I
D
= 52 A
GADG131220191131QVG V
GS
(V)
12
Q g
10
Q gd
400 Q gs
300
200
100
0
0 20 40 60 80
8
6
4
2
Q g
0
(nC)
DS12933 - Rev 4 page 5/12
STWA67N60DM6
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
GADG131220191115CVR
10 4
C iss
10 3
10 2
C o ss
10 1 C r ss f = 1 MHz
10 0
10 -1
10 -1 10 0 10 1 10 2
V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG220220190909RON
2.5
V
GS
= 10 V
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T
J
(°C)
Figure 8. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG220220190908VTH
I
D
= 250 μA
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T
J
(°C)
Figure 10. Typical output capacitance stored energy
E
OSS
(μJ)
30
GADG131220191119EOS
25
20
15
10
5
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
GADG220220190910BDV
1.10
I
D
= 1 mA
1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T
J
(°C)
Figure 12. Typical reverse diode forward characteristics
V
SD
(V)
1.1
GADG131220191114SDF
T j
= -50 °C
1.0
0.9
T j
= 25 °C
0.8
T j
= 150 °C
0.7
0.6
0.5
0 10 20 30 40 50 I
SD
(A)
DS12933 - Rev 4 page 6/12
STWA67N60DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10 AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
Figure 16. Unclamped inductive load test circuit
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
AM01472v1
DS12933 - Rev 4 page 7/12
4
4.1
STWA67N60DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-247 long leads package information
Figure 19. TO-247 long leads package outline
DS12933 - Rev 4
8463846_3 page 8/12
DS12933 - Rev 4
Dim.
E3 e
L
L1
P
Q
S aaa b3 c
D
E
E2
A
A1
A2 b b2
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
0.04
STWA67N60DM6
TO-247 long leads package information
Table 8. TO-247 long leads package mechanical data
Min.
4.90
2.31
1.90
1.16
mm
Typ.
5.00
2.41
2.00
Max.
2.60
5.54
20.10
4.30
3.70
6.00
6.25
0.10
2.25
0.66
21.10
15.90
5.10
5.10
2.51
2.10
1.26
3.25
page 9/12
STWA67N60DM6
Revision history
Date
22-Feb-2019
19-Dec-2019
07-Jul-2020
04-Jun-2021
2
3
4
Table 9. Document revision history
Version
1
Changes
First release.
Updated Absolute maximum ratings, On/off states, Table 5. Dynamic characteristics and Table 7. Source-drain diode.
Updated Section 2.1 Electrical characteristics curves.
Minor text changes.
Updated Table 1. Absolute maximum ratings .
Modified Table 1. Absolute maximum ratings
,
Table 2. Thermal data ,
Table 4. On/off states and
Table 7. Source-drain diode
.
Modified Figure 1. Safe operating area , Figure 2. Maximum transient thermal impedance , Figure 5. Typical drain-source on-resistance and
Figure 12. Typical reverse diode forward characteristics .
DS12933 - Rev 4 page 10/12
STWA67N60DM6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS12933 - Rev 4 page 11/12
STWA67N60DM6
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DS12933 - Rev 4 page 12/12
