STW68N65DM6
Datasheet
N-channel 650 V, 51 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package
G(1)
TO-247
1
2
3
D(2, TAB)
S(3)
AM01476v1_tab
Features
Order code
STW68N65DM6
V
DS
650 V
R
DS(on) max
59 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
55 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STW68N65DM6
Product summary
Order code STW68N65DM6
Marking
Package
Packing
68N65DM6
TO-247
Tube
DS13331 - Rev 3 - May 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STW68N65DM6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Parameter
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
di/dt (2) dv/dt (3)
T
STG
T
J
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 55 A, V
DS
(peak) < V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 520 V.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (t p
limited by T
J
max)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
±25
55
35
172
431
100
1000
100
-55 to 150
Unit
V
A
A
A
W
V/ns
A/μs
V/ns
°C
°C
Value
0.29
50
Unit
°C/W
°C/W
Value
9
930
Unit
A mJ
DS13331 - Rev 3 page 2/12
2
STW68N65DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
Parameter
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 650 V, T
C
= 125 °C
(1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 μA
Static drain-source on resistance V
GS
= 10 V, I
D
= 24 A
Min.
Typ.
Max.
Unit
650 V
1
100
μA
±5
3.25
4.00
4.75
51 59
μA
V mΩ
Table 5. Dynamic characteristics
Symbol
C iss
C oss
C rss
C oss eq
.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
= 100 V, f = 1 MHz, V
= 0 to 520 V, V f = 1 MHz, I
V
DS
DS
DD
= 520 V, I
(see
D
Test conditions
= 0 A
D
charge behavior )
GS
GS
= 0 V
= 48 A, V
GS
= 0 V
= 0 to 10 V
Figure 14. Test circuit for gate
Min.
-
-
-
-
-
-
-
-
Typ.
3528
258
1.5
609
1.25
80
21.5
35
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 34 A,
R
G
= 4.7 Ω , V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
25 ns
32 ns
-
76
9 -
ns ns
DS13331 - Rev 3 page 3/12
STW68N65DM6
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
I
I
SD
(2)
t
Q
RRM t
Q rr rr rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Test conditions
V
GS
= 0 V, I
SD
= 48 A
I
SD
= 48 A, di/dt = 100 A/μs,
V
DD
= 60 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
I
SD
= 48 A, di/dt = 100 A/μs,
V
DD
= 60 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
Min.
Typ.
Max.
Unit
55 A
-
-
-
135
0.641
172
0.98
A
V ns
µC
9.5
245
2.45
20
A ns
µC
A
DS13331 - Rev 3 page 4/12
STW68N65DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
10 2
10 1
10 0
Figure 1. Safe operating area
GADG060520201023SOA
I
DM t p
=1 µs
V
(BR)DSS t p
=10 µs in this area
by
R
DS(on)
Operation is limited
R
DS(on)
max.
t p
=100 µs
10 -1 t p
=1 ms
10 -2
10 -1 10 0
T
C
= 25 °C
T
V
J
≤ 150 °C
GS
=10 V single pulse
10 1 10 2 t p
=10 ms
V
DS
(V)
Figure 3. Typical output characteristics
I
D
(A)
GADG060520201021OCH
V
GS
=9, 10 V
160
120
V
GS
=8 V
V
GS
=7 V
80
V
GS
=6 V
40
0
0 4 8 12 16 V
DS
(V)
Figure 5. Typical gate charge characteristics
V
DS
(V)
600
V
DD
I
D
= 520 V
= 48 A
Q g
500
V
DS
400
Q gs
Q gd
300
GADG060520201022QVG V
GS
(V)
12
10
8
6
200
100
0
0 16 32 48 64 80 96
4
2
Q
0 g
(nC)
Figure 2. Maximum transient thermal impedance
GADG060520201023ZTH
Z thJC
(°C/W)
10 -1 duty=0.5
4
10 -2
0.05
3
2
Figure 4. Typical transfer characteristics
I
D
(A)
GADG060520201021TCH
V
DS
= 20 V
160
120
80
40
0
0
10 -3
Single pulse R thJC
= 0.29 °C/W duty = t on
/ T t on
10 -4
T
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
2 4 6 8 V
GS
(V)
Figure 6. Typical drain-source on-resistance
R
DS(on)
(mΩ)
54
V
GS
= 10 V
GADG060520201019RID
53
52
51
50
49
0 10 20 30 40 I
D
(A)
DS13331 - Rev 3 page 5/12
STW68N65DM6
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
10 4
GADG060520201021CVR
C iss
10 3
C o ss
10 2
10 1
10 0
10 -1
10 -1 10 0 f = 1 MHz
10 1 10 2
C r ss
V
DS
(V)
Figure 8.
30
20
10
Typical output capacitance stored energy
GADG060520201022EOS
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 9. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
1.1
GADG060520201018VTH
I
D
= 250 μA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T
J
(°C)
Figure 10. Normalized on-resistance vs. temperature
R
DS(on)
(norm.)
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25
V
GS
= 10 V
25
GADG060520201019RON
75 125 T
J
(°C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
1.08
I
D
= 1 mA
GADG060520201020BDV
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T
J
(°C)
Figure 12. Typical reverse diode forward characteristics
V
SD
(V)
1.1
GADG060520201020SDF
T
J
= -50 °C
1.0
0.9
T
J
= 25 °C
0.8
0.7
0.6
0.5
0 10 20
T
J
= 150 °C
30 40 I
SD
(A)
DS13331 - Rev 3 page 6/12
STW68N65DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10 AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
Figure 16. Unclamped inductive load test circuit
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
AM01472v1
DS13331 - Rev 3 page 7/12
4
4.1
STW68N65DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-247 package information
Figure 19. TO-247 package outline aaa
DS13331 - Rev 3
0075325_10 page 8/12
DS13331 - Rev 3
Dim.
c
D
E e
L
A
A1 b b1 b2
ØR
S aaa
L1
L2
ØP
Table 8. TO-247 package mechanical data mm
Typ.
Min.
0.40
19.85
15.45
5.30
14.20
3.70
4.85
2.20
1.0
2.0
3.0
5.45
18.50
3.55
4.50
5.30
5.50
0.04
STW68N65DM6
TO-247 package information
Max.
0.80
20.15
15.75
5.60
14.80
4.30
5.15
2.60
1.40
2.40
3.40
3.65
5.50
5.70
0.10
page 9/12
STW68N65DM6
Revision history
Date
08-May-2020
25-Mar-2021
21-May-2021
Version
1
2
3
Table 9. Document revision history
Changes
First release. Part number previously included in datasheet DS12367.
Updated Table 4. On/off states .
Updated Section 4 Package information.
Minor text changes.
Modified Table 1. Absolute maximum ratings
,
Table 2. Thermal data
and Table 7. Source-drain diode .
Modified Figure 1. Safe operating area and Figure 2. Maximum transient thermal impedance .
Minor text changes.
DS13331 - Rev 3 page 10/12
STW68N65DM6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13331 - Rev 3 page 11/12
STW68N65DM6
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DS13331 - Rev 3 page 12/12
