STD52P3LLH6
Datasheet
P-channel 30 V, 10 mΩ typ., 52 A, STripFET H6 Power MOSFET in a DPAK package
G(1)
TAB
DPAK
1
2 3
D(2, TAB)
S(3)
Features
Order codes
STD52P3LLH6
V
DSS
30 V
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
R
DS(on) max
12 mΩ
I
D
52 A
P
TOT
70 W
Applications
• Switching applications
AM11258v1
Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R
DS(on)
in all packages.
Product status link
STD52P3LLH6
Product summary
Order code
Marking
Package
Packing
STD52P3LLH6
52P3LLH6
DPAK
Tape and reel
Note: For the P-channel Power
MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10148 - Rev 3 - February 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STD52P3LLH6
Electrical ratings
1
Note:
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Parameter
I
D
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(1)
P
TOT
T stg
T
J
Total power dissipation at T
Storage temperature
C
= 25 °C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
Symbol
R thj-case
Table 2. Thermal data
Parameter
Thermal resistance junction-case max
Value
30
±20
52
37.5
208
70
-55 to 175
175
Unit
V
V
A
A
A
W
°C
°C
Value
2.14
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Unit
°C/W
DS10148 - Rev 3 page 2/15
STD52P3LLH6
Electrical characteristics
2
Note:
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. Static
Parameter Test conditions
Drain-source breakdown Voltage I
D
= 250 µA, V
GS
= 0 V
V
GS
= 0 V, V
DS
= 30 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 30 V, T
C
= 125 °C
Gate-body leakage current V
GS
= ±20 V, V
DS
= 0 V
Gate threshold voltage
Static drain-source on-resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 26 A
V
GS
= 4.5 V, I
D
= 26 A
Min.
Typ.
Max.
Unit
30
1
V
µA
1
10
14
10 µA
±100 nA
2.5
V
12
17 mΩ mΩ
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
Table 4. Dynamic
DS
Test conditions
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 15 V, I
D
= 52 A, V
GS
= 4.5 V
(see
Figure 13. Gate charge test circuit
)
-
-
-
-
Min Typ.
Max.
Unit
3350 pF
414 pF
287
33
14
11
-
-
-
pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching on/off (inductive load)
Test conditions
V
DD
= 24 V, I
D
= 15 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 12. Switching times test circuit for resistive load )
Min.
Typ.
Max.
Unit
12.8
ns
-
-
-
112
61
45
-
-
ns ns ns
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10148 - Rev 3 page 3/15
STD52P3LLH6
Electrical characteristics
Note:
Table 6. Source-drain diode
Symbol
V
SD
(1)
t rr
Q rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
I
SD
Test conditions
= 52 A, V
GS
= 0 V
I
SD
= 52 A, di/dt = 100 A/µs, V
DD
= 24 V
(see
Figure 14. Test circuit for inductive load switching and diode recovery times )
Min.
Typ.
Max.
Unit
1.1
V
-
-
-
25.2
17.4
1.4
ns nC
A
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
DS10148 - Rev 3 page 4/15
2.1
STD52P3LLH6
Electrical characteristics (curves)
Electrical characteristics (curves)
I
D
(A)
100
Figure 1. Safe operating area
GIPG280820141231MT
Operation limited
by
max
10
100µs
1ms
10ms
1
0.1
0.1
0.1
1
Tj=175°C
Tc=25°C
10 V
DS
(V)
I D (A)
200
Figure 3. Output characteristics
V
GS
= 9,10V
GIPG280820141409MT
8V
7V
6V
150
5V
100
50
4V
3V
0
0 2 4 6 8 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
GIPG290820141127MT
V
DD
=15V
I
G
=52A
10
8
6
4
2
0
0 20 40 60 Q g
(nC)
K
Figure 2. Thermal impedance
GIPG280820141339MT
δ =0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10 -5 10 -4 10 -3 10 -2 10 -1 t p (s)
100
50
0
0
Figure 4. Transfer characteristics
GIPG290820141119MT
I
D
(A)
V
DS
=4V
200
150
2 4 6 8 V
GS
(V)
Figure 6. Static drain-source on-resistance
GIPG290820141143MT R
DS(on)
(m Ω )
11.50
11.00
V GS =10V
10.50
10.00
9.50
9.00
8.50
8.00
0 2 4 6 8 10 I
D
(A)
DS10148 - Rev 3 page 5/15
DS10148 - Rev 3
STD52P3LLH6
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GIPG290820141342MT
4000
Ciss
3000
2000
1000
0
0 5 10 15 20 25 V
DS
(V)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm)
1.1
GIPG290820141351MT
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-75 -25 25 75 125 175 T
J
(°C)
Figure 9. Normalized on-resistance vs temperature
GIPG290820141400MT R
DS(on)
(norm)
1.6
V
GS
= 10 V
1.4
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-75 -25 25
I
D
= 1 mA
75
GIPG290820141412MT
125 175 T
J
(°C)
Figure 11. Source-drain diode forward characteristics
GIPG290820141433MT
V
SD
(V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0 10
T
J
=25°C
T J =175°C
20
T
J
=-55°C
30 40 50 I
SD
(A) page 6/15
STD52P3LLH6
Test circuits
3
Test circuits
Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
DS10148 - Rev 3 page 7/15
4
4.1
STD52P3LLH6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DPAK (TO-252) type A package information
Figure 15. DPAK (TO-252) type A package outline
DS10148 - Rev 3
0068772_A_26 page 8/15
DS10148 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
(L1)
STD52P3LLH6
DPAK (TO-252) type A package information
Table 7. DPAK (TO-252) type A mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
4.60
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
4.70
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
4.80
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 9/15
DS10148 - Rev 3
STD52P3LLH6
DPAK (TO-252) type A package information
Figure 16. DPAK (TO-252) type A recommended footprint (dimensions are in mm)
FP_0068772_26 page 10/15
4.2
DPAK (TO-252) packing information
Figure 17. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
STD52P3LLH6
DPAK (TO-252) packing information
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS10148 - Rev 3 page 11/15
DS10148 - Rev 3
A
D
B
Figure 18. DPAK (TO-252) reel outline
STD52P3LLH6
DPAK (TO-252) packing information
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
AM06038v1
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 8. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 12/15
STD52P3LLH6
Revision history
Date
02-Jun-2014
24-Sep-2014
11-Feb-2020
Revision
1
2
3
Table 9. Document revision history
Changes
First release
Updated the title, the features and the description in cover page.
Updated Table 2: "Absolute maximum ratings" , Section 2: "Electrical characteristics" .
Added Section 2.1: "Electrical characteristics (curves)" .
Minor text changes.
Datasheet status promoted from preliminary to production data.
Minor text changes.
DS10148 - Rev 3 page 13/15
STD52P3LLH6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS10148 - Rev 3 page 14/15
STD52P3LLH6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2020 STMicroelectronics – All rights reserved
DS10148 - Rev 3 page 15/15
