STGWA20HP65FB2
Datasheet
Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT
in a TO‑247 long leads package
Features
•
Maximum junction temperature : TJ = 175 °C
•
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
•
•
•
•
•
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
C(2, TAB)
Applications
•
•
G(1)
Welding
Power factor correction
Description
E(3)
NG1E3C2T
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A diode used for protection
purposes only is co-packaged in antiparallel with the IGBT. The result is a product
specifically designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA20HP65FB2
Product summary
Order code
STGWA20HP65FB2
Marking
G20HP65FB2
Package
TO-247 long leads
Packing
Tube
DS13334 - Rev 1 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA20HP65FB2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
40
A
Continuous collector current at TC = 100 °C
25
A
Pulsed collector current
60
A
Gate-emitter voltage
±20
Transient gate-emitter voltage (tp ≤ 10 μs)
±30
Continuous forward current at TC = 25 °C
5
Continuous forward current at TC = 100 °C
5
Pulsed forward current
10
A
PTOT
Total power dissipation at TC = 25 °C
147
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
VCES
IC
(1)(2)
ICP
VGE
IF
IFP(1)(2)
TJ
Parameter
V
A
1. Pulse width is limited by maximum junction temperature.
2. Defined by design, not subject to production test.
Table 2. Thermal data
Symbol
RthJC
RthJA
DS13334 - Rev 1
Parameter
Thermal resistance junction-case IGBT
1.02
Thermal resistance junction-case diode
5
Thermal resistance junction-ambient
50
°C/W
page 2/15
STGWA20HP65FB2
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
VCE(sat)
Parameter
Test conditions
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
VGE = 0 V, IC = 1 mA
Min.
Forward on-voltage
1.65
VGE = 15 V, IC = 20 A, TJ = 125 °C
1.95
VGE = 15 V, IC = 20 A, TJ = 175 °C
2.1
2
IF = 5 A, TJ = 125 °C
1.85
IF = 5 A, TJ = 175 °C
1.75
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 20 A
VGE(th)
Max.
650
IF = 5 A
VF
Typ.
6
2.1
V
2.8
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 20 A, VGE = 0 to 15 V
(see Figure 27. Gate charge test circuit)
Min.
Typ.
Max.
-
1010
-
-
81
-
-
26
-
-
56
-
-
9.4
-
-
27.8
-
Min.
Typ.
Max.
Unit
pF
nC
Table 5. Switching characteristics (inductive load)
Symbol
td(off)
Parameter
Test conditions
Turn-off delay time
VCC = 400 V, IC = 20 A,
-
78.8
-
ns
Current fall time
VGE = 15 V, RG = 10 Ω
-
35
-
ns
Eoff (1)
Turn-off switching energy
(see Figure 26. Test circuit for inductive
load switching)
-
214
-
μJ
td(off)
Turn-off delay time
VCC = 400 V, IC = 20 A,
-
98
-
ns
Current fall time
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
-
80
-
ns
Turn-off switching energy
(see Figure 26. Test circuit for inductive
load switching)
-
378
-
µJ
tf
tf
Eoff(1)
1. Including the tail of the collector current.
DS13334 - Rev 1
page 3/15
STGWA20HP65FB2
Electrical characteristics
Table 6. Diode switching characteristics (inductive load)
Symbol
DS13334 - Rev 1
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
140
-
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 5 A, VR = 400 V,
-
21
-
nC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1000 A/µs
-
6.6
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 29. Diode reverse recovery
waveform)
-
430
-
A/µs
Err
Reverse recovery energy
-
1.6
-
µJ
trr
Reverse recovery time
-
200
-
ns
-
47.3
-
nC
-
9.6
-
A
-
428
-
A/µs
-
3.2
-
µJ
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 5 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29. Diode reverse recovery
waveform)
page 4/15
STGWA20HP65FB2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
≤≥
PTOT
(W)
160
GADG310320201456PDT
IC
(A)
20
40
10
75
125
175
TC (°C)
Figure 3. Output characteristics (TJ = 25 °C)
IC
(A)
50
GADG310320201545OC25
VGE = 15 V
11 V
0
25
9V
IC
(A)
10
10
7V
3
4
5
VCE (V)
Figure 5. VCE(sat) vs junction temperature
VCE(SAT)
(V)
2.8
GADG310320201548VCET
VGE = 15 V
DS13334 - Rev 1
9V
7V
1
2
3
4
5
VCE (V)
Figure 6. VCE(sat) vs collector current
VCE(SAT)
(V)
GADG310320201549VCEC
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
2.0
TJ = -40 °C
1.6
1.2
0.8
-50
13 V
2.4
IC = 10 A
1.6
11 V
VGE = 15 V
2.8
IC = 20 A
2.0
0
0
3.2
IC = 40 A
2.4
TC (°C)
GADG310320201547OC175
30
20
2
175
Figure 4. Output characteristics (TJ = 175 °C)
20
1
125
40
30
0
0
75
50
13 V
40
VGE ≥ 15 V, TJ ≤ 175 °C
30
80
0
25
GADG310320201459CCT
40
VGE ≥ 15 V, TJ ≤ 175 °C
120
Figure 2. Collector current vs case temperature
1.2
0
50
100
150
TJ (°C)
0.8
0
10
20
30
40
50
IC (A)
page 5/15
STGWA20HP65FB2
Electrical characteristics (curves)
Figure 7. Forward bias safe operating area
IC
(A)
Figure 8. Transfer characteristics
IC
(A)
GADG310320201550FSOA
50
GADG310320201551TCH
VCE = 6 V
102
tp = 1µs
tp = 10µs
101
40
30
tp = 100µs
tp = 1ms
100
10-1
10
Single pulse, TC = 25°C
TJ ≤ 175°C, VGE = 15V
100
101
VCE (V)
102
Figure 9. Diode VF vs forward current
VF
(V)
TJ = 175°C
20
IGBT090420181403DVF
TJ = -40 °C
0
5
TJ = 25°C
6
7
8
9
10
VGE (V)
Figure 10. Normalized VGE(th) vs junction temperature
VGE(th)
(norm.)
IGBT090420181403NVGE
1.1
TJ = 25 °C
2.4
VCE=VGE
1.0
TJ = 175 °C
IC=1mA
0.9
1.6
0.8
0.8
0.7
0.0
0
2
4
6
8
IF (A)
Figure 11. Normalized V(BR)CES vs junction temperature
V(BR)CES
(norm.)
IGBT090420181404NVBR
1.08
0.6
-50
0
50
100
150
TJ (°C)
Figure 12. Capacitance variations
C
(pF)
GADG310320201553CVR
CIES
10 3
IC =1mA
1.04
10 2
1.00
COES
10 1
0.96
0.92
-50
DS13334 - Rev 1
0
50
100
150
TJ (°C)
10 0
10 -1
CRES
f = 1 MHz
10 0
10 1
10 2
VCE (V)
page 6/15
STGWA20HP65FB2
Electrical characteristics (curves)
Figure 13. Gate charge vs gate-emitter voltage
VGE
(V)
GADG310320201554GCGE
VCC = 520V, IC = 20A, IG = 1.3mA
Figure 14. Switching energy vs collector current
GADG280420201258SLC
E
(mJ) VCC = 400 V, RG = 10 Ω,
VGE = 15 V, TJ=175 ℃
15
0.75
12
9
Eoff
0.50
6
0.25
3
0
0
10
20
30
40
50
60
Qg (nC)
Figure 15. Switching energy vs temperature
E
(mJ)
GADG280420201258SLT
VCC = 400 V, IC = 40 A,
Rg = 10 Ω, VGE = 15 V
0.4
0.00
0
10
20
30
40
IC (A)
Figure 16. Switching energy vs collector emitter voltage
E
(mJ)
GADG280420201259SLV
2 A
0.6
Eoff
0.3
0.4
Eoff
0.2
0.2
0.1
0
50
100
0.0
150
150
Figure 17. Switching energy vs gate resistance
E
(mJ)
GADG280420201300SLG
2
250
350
450
VCE (V)
Figure 18. Switching times vs collector current
t
(ns)
GADG290420200915STC
10
0.5
Eoff
0.4
td(off)
10 2
tf
0.3
0.2
0
DS13334 - Rev 1
10
20
30
40
RG (Ω)
10 1
0
10
20
30
40
IC (A)
page 7/15
STGWA20HP65FB2
Electrical characteristics (curves)
Figure 20. Reverse recovery current vs diode current
slope
Figure 19. Switching times vs gate resistance
t
(ns)
GADG290420200916STR
Irrm
(A)
2
12
IGBT120120160800RRC
VCC =400 V, VGE = 15 V,
IF = 5 A, TJ =175 °C
10
td(off)
8
10 2
tf
6
4
2
10 1
0
10
20
30
40
0
0
RG (Ω)
Figure 21. Reverse recovery time vs diode current slope
trr
(ns)
350
300
600
900
1200 di/dt (A/µs)
Figure 22. Reverse recovery charge vs diode current
slope
IGBT120120160824RRQ
Qrr
(nC) VCC = 400 V, VGE = 15 V,
IF = 5 A, TJ = 175 °C
50
IGBT120120160820RRT
VCC = 400 V, VGE = 15 V,
IF = 5 A, TJ = 175 °C
300
48
250
46
200
150
100
0
44
300
600
900
1200 di/dt (A/μs)
42
0
300
600
900
1200
di/dt (A/µs)
Figure 23. Reverse recovery energy vs diode current slope
Err
(μJ)
IGBT120120160826RRE
VCC = 400 V, VGE = 15 V,
IF = 5 A, TJ = 175 °C
5
4
3
2
0
DS13334 - Rev 1
300
600
900
1200
di/dt (A/µs)
page 8/15
STGWA20HP65FB2
Electrical characteristics (curves)
Figure 24. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
-4
10
-3
10
-2
10
-1
10
tp (s)
Figure 25. Thermal impedance for diode
DS13334 - Rev 1
page 9/15
STGWA20HP65FB2
Test circuits
3
Test circuits
Figure 27. Gate charge test circuit
Figure 26. Test circuit for inductive load switching
C
A
VCC
A
RL
L=100 µH
G
E
B
B
Vi ≤ VGMAX
G
+
3.3
µF
C
RG
1000
µF
100 Ω
IG = CONST
D.U.T.
VCC
2200
μF
D.U.T
E
2.7 kΩ
47 kΩ
-
1 kΩ
PW
AM01504v1
Figure 28. Switching waveform
GADG160420181048IG
Figure 29. Diode reverse recovery waveform
di/dt
Qrr
90%
IF
10%
VG
trr
ts
tf
90%
VCE
10%
IRRM
tcross
90%
IC
td(on)
ton
td(off)
tr(Ion)
t
IRRM
10%
tr(Voff)
VRRM
10%
tf
toff
dv/dt
AM01506v1
GADG180720171418SA
DS13334 - Rev 1
page 10/15
STGWA20HP65FB2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-247 long leads package information
Figure 30. TO-247 long leads package outline
8463846_2_F
DS13334 - Rev 1
page 11/15
STGWA20HP65FB2
TO-247 long leads package information
Table 7. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS13334 - Rev 1
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 12/15
STGWA20HP65FB2
Revision history
Table 8. Document revision history
DS13334 - Rev 1
Date
Version
11-May-2020
1
Changes
First release.
page 13/15
STGWA20HP65FB2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS13334 - Rev 1
page 14/15
STGWA20HP65FB2
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© 2020 STMicroelectronics – All rights reserved
DS13334 - Rev 1
page 15/15
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