STGWA25M120DF3
Datasheet
Trench gate field-stop, 1200 V, 25 A, low-loss, M series IGBT
in a TO-247 long leads package
Features
•
Maximum junction temperature: TJ = 175 °C
•
•
10 μs of short-circuit withstand time
Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
•
•
Tight parameter distribution
Positive VCE(sat) temperature coefficient
•
•
Low thermal resistance
Soft- and fast-recovery antiparallel diode
C(2, TAB)
Applications
•
•
•
•
G(1)
E(3)
Industrial drives
UPS
Solar
Welding
NG1E3C2T
Description
Product status link
STGWA25M120DF3
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
Product summary
Order code
STGWA25M120DF3
Marking
G25M120DF3
Package
TO-247 long leads
Packing
Tube
DS12637 - Rev 1 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA25M120DF3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
1200
V
Continuous collector current at TC = 25 °C
50
A
Continuous collector current at TC = 100 °C
25
A
Pulsed collector current
100
A
Gate-emitter voltage
±20
V
Transient gate-emitter voltage
±30
V
Continuous forward current at TC = 25 °C
50
A
Continuous forward current at TC = 100 °C
25
A
IFP(1)
Pulsed forward current
100
A
PTOT
Total dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
Thermal resistance junction-case IGBT
0.4
°C/W
Thermal resistance junction-case diode
0.96
°C/W
50
°C/W
VCES
IC
ICP(1)
VGE
IF
TJ
Parameter
Collector-emitter voltage (VGE = 0 V)
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
RthJC
RthJA
DS12637 - Rev 1
Parameter
Thermal resistance junction-ambient
page 2/15
STGWA25M120DF3
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
Parameter
Test conditions
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 2 mA
Min.
VGE = 15 V, IC = 25 A,
Forward on-voltage
IF = 25 A
2.95
IF = 25 A, TJ = 125 °C
2.95
IF = 25 A, TJ = 175 °C
1.9
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
V
2.2
TJ = 175 °C
VF
2.3
2.1
TJ = 125 °C
Unit
V
1.85
VGE = 15 V, IC = 25 A,
VCE(sat)
Max.
1200
VGE = 15 V, IC = 25 A
Collector-emitter saturation
voltage
Typ.
5
6
4.1
V
7
V
VGE = 0 V, VCE = 1200 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Qge
Qgc
DS12637 - Rev 1
Parameter
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Min.
Typ.
Max.
-
1550
-
-
180
-
-
65
-
Total gate charge
VCC = 960 V, IC = 25 A,
-
85
-
Gate-emitter charge
VGE = 0 to 15 V
-
11.5
-
Gate-collector charge
(see Figure 29. Gate charge test
circuit)
-
45.5
-
pF
nC
page 3/15
STGWA25M120DF3
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Typ.
Max.
Unit
Turn-on delay time
28
-
ns
Current rise time
15
-
ns
1370
-
A/µs
150
-
ns
155
-
ns
0.85
-
mJ
Turn-on current slope
Turn-off delay time
Current fall time
Test conditions
Min.
VCE = 600 V, IC = 25 A,
VGE = 15 V, RG = 15 Ω
(see Figure 28. Test circuit for
inductive load switching)
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
1.3
-
mJ
Total switching energy
2.15
-
mJ
Turn-on delay time
28
-
ns
Current rise time
17
-
ns
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
Turn-on current slope
VCE = 600 V, IC = 25 A,
1270
-
A/µs
Turn-off delay time
VGE = 15 V, RG = 15 Ω,
155
-
ns
240
-
ns
1.6
-
mJ
Current fall time
TJ = 175 °C
Eon
(1)
Turn-on switching energy
(see Figure 28. Test circuit for
inductive load switching)
Eoff(2)
Turn-off switching energy
1.9
-
mJ
Ets
Total switching energy
3.5
-
mJ
tsc
Short-circuit withstand time
-
µs
tf
VCC ≤ 600 V, VGE = 15 V,
TJstart ≤ 150 °C
10
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
Table 6. Diode switching characteristics (inductive load)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
-
265
-
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 25 A, VR = 600 V,
-
1.2
-
µC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1000 A/µs
-
19
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 28. Test circuit for
inductive load switching)
-
1090
-
A/µs
Err
Reverse recovery energy
-
0.22
-
µJ
trr
Reverse recovery time
-
585
-
ns
-
5
-
µC
-
30
-
A
-
270
-
A/µs
-
0.75
-
µJ
Qrr
DS12637 - Rev 1
Parameter
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 25 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
page 4/15
STGWA25M120DF3
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
GIPD301020140906FSR
Ptot
(W)
VGE ≥ 15 V, T J ≤ 175 °C
320
Figure 2. Collector current vs case temperature
GIPD301020140909FSR
IC
(A)
VGE ≥ 15 V, T J ≤ 175 °C
50
40
240
30
160
20
80
10
0
0
100
50
TC(°C)
150
Figure 3. Output characteristics (TJ = 25 °C)
GIPD301020140913FSR
IC (A)
0
0
100
50
Figure 4. Output characteristics (TJ = 175 °C)
GIPD301020140919FSR
IC (A)
VGE=15V
13V
VGE=15V
TC(°C)
150
13V
80
80
11V
11V
60
60
40
9V
40
9V
20
20
7V
0
0
7V
1
2
3
4
VCE(V)
5
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
(V)
GIPD301020140924FSR
VGE=15V
IC=50A
3.2
0
0
1
2
3
4
VCE(V)
Figure 6. VCE(sat) vs collector current
GIPD301020141133FSR
VCE(sat) (V)
3.2
Tj=175°C
VGE=15V
2.8
2.8
5
Tj=25°C
2.4
2.4
IC=25A
2.0
2.0
IC=12.5A
1.6
1.2
-50
DS12637 - Rev 1
Tj=-40°C
1.6
1.2
0
50
100
150
TC(°C)
0.8
0
10
20
30
40
IC(A)
page 5/15
STGWA25M120DF3
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
GIPD301020141144FSR
IC (A)
Figure 8. Safe operating area
GIPD301020141151FSR
IC (A)
TC=80°C
60
TC=100°C
100
1µs
40
10µs
10
20
Rectangular current shape,
(duty cycle=0.5, Vcc= 600V Rg=15Ω,
Vge=0/15V, Tj=175 °C)
0
1
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
f(kHz)
10
100
10
1ms
1000
VCE(V)
Figure 10. Diode VF vs forward current
Figure 9. Transfer characteristics
GIPD301020141159FSR
IC (A)
1
1
100µs
GIPD301020141203FSR
VF (V)
Tj=-40°C
Tj=25°C
6
80
5
60
VCE = 8V
4
40
Tj=25°C
3
Tj=175°C
Tj=175°C
2
20
0
3
1
5
7
9
11
VGE(V)
Figure 11. Normalized VGE(th) vs junction temperature
GIPD301020141315FSR
VGE(th)
(norm)
VCE=VGE
IC=1mA
1.1
0
0
0.96
0.8
0.92
DS12637 - Rev 1
100
80
IC(A)
IC=2mA
1.04
0.9
50
60
GIPD301020141322FSR
V(BR)CES
(norm)
1.0
0
40
Figure 12. Normalized V(BR)CES vs junction temperature
1.0
0.7
-50
20
150
TC(°C)
0.88
-50
0
50
100
150
TC(°C)
page 6/15
STGWA25M120DF3
Electrical characteristics (curves)
Figure 13. Capacitance variations
Figure 14. Gate charge vs gate-emitter voltage
GIPD301020141335FSR
C(pF)
GIPD301020141341FSR
VGE(V)
VCC = 960 V
IC = 25 A
IG = 1 mA
16
Cies
1000
12
8
100
Coes
f= 1MHz
4
10
0.1
Cres
100
10
1
VCE(V)
Figure 15. Switching energy vs collector current
GIPD301020141347FSR
E(mJ)
3.2
20
40
60
80
Qg(nC)
Figure 16. Switching energy vs gate resistance
GIPD301020141410FSR
E(mJ)
VCC=600V, VGE=15V
IC=25A, Tj=175°C
VCC=600V, VGE=15V
Rg=15Ω, Tj=175°C
2.4
0
0
2.6
2.2
Eoff
Eoff
1.6
1.8
Eon
0.8
0
0
1.4
10
20
30
40
50 IC(A)
Figure 17. Switching energy vs junction temperature
GIPD301020141418FSR
E(mJ)
1
0
10
20
30
40
50
60
Rg(Ω)
Figure 18. Switching energy vs collector emitter voltage
GIPD301020141422FSR
E(mJ)
VCC=600V, VGE=15V
IC=25A, Rg=15Ω
1.8
Eon
VGE=15V, Tj=175°C
IC=25A, Rg=15Ω
2.5
1.6
2
Eoff
1.4
Eoff
Eon
1.5
1.2
1
0.8
DS12637 - Rev 1
0
1
Eon
50
100
150
TJ(°C)
0.5
200
400
600
800
VCE(V)
page 7/15
STGWA25M120DF3
Electrical characteristics (curves)
Figure 19. Short-circuit time and current vs VGE
GIPD301020141425FSR
Isc(A)
tsc(µs)
VCC ≤ 600V
TJ ≤150 °C
35
Figure 20. Switching times vs collector current
GIPD301020141429FSR
t(ns)
VCC=600V, VGE=15V
Isc
Tj=175°C, Rg=15Ω
tf
140
tsc
tdoff
100
tdon
100
25
tr
10
15
5
60
9
10
11
12
13
14
15
20
VGE(V)
Figure 21. Switching times vs gate resistance
20
10
30
Irrm
(A)
VCC=600V, VGE=15V
Tj=175°C, IC=25A
48
tf
40
50 IC(A)
Figure 22. Reverse recovery current vs diode current
slope
GIPD301020141432FSR
t(ns)
100
1
0
GIPD301020141437FSR
VCC=600V, VGE=15V
Tj=175°C, IF=25A
40
tdoff
32
tdon
24
tr
10
0
10
20
30
40
50
60
Rg(Ω)
Figure 23. Reverse recovery time vs diode current slope
16
200
800
1400
Figure 24. Reverse recovery charge vs diode current
slope
GIPD301020141439FSR
trr
(ns)
2000 di/dt(A/µs)
GIPD301020141442FSR
Qrr
(µC)
700
5.2
600
5
4.8
500
4.6
400
300
200
DS12637 - Rev 1
VCC=600V, VGE=15V
Tj=175°C, IF=25A
800
1400
4.4
2000 di/dt(A/µs)
4.2
200
VCC=600V, VGE=15V
Tj=175°C, IF=25A
800
1400
2000 di/dt(A/µs)
page 8/15
STGWA25M120DF3
Electrical characteristics (curves)
Figure 25. Reverse recovery energy vs diode current slope
GIPD301020141445FSR
Err
(mJ)
0.9
0.8
0.7
0.6
0.5
VCC=600V, VGE=15V
Tj=175°C, IF=25A
0.4
200
800
2000 di/dt(A/µs)
1400
Figure 26. Thermal impedance for IGBT
K
ZthTO2T_A
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10 -1
δ = 0.01
Single pulse
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 27. Thermal impedance for diode
DS12637 - Rev 1
page 9/15
STGWA25M120DF3
Test circuits
3
Test circuits
Figure 28. Test circuit for inductive load switching
C
A
Figure 29. Gate charge test circuit
A
k
k
L=100 µH
G
E
B
B
G
+
3.3
µF
C
RG
1000
µF
VCC
k
D.U.T
E
k
-
k
k
AM01505v1
AM015 04v 1
Figure 31. Diode reverse recovery waveform
Figure 30. Switching waveform
di/dt
90%
10%
VG
90%
VCE
Qrr
trr
IF
ts
tf
10%
Tr(Voff)
90%
IC
Td(on)
Ton
Tr(Ion)
10%
IRRM
10%
Td(off)
t
IRRM
Tcross
VRRM
Tf
Toff
dv/dt
AM01506v1
DS12637 - Rev 1
GADG180720171418SA
page 10/15
STGWA25M120DF3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1
TO-247 long leads package information
Figure 32. TO-247 long leads package outline
8463846_2_F
DS12637 - Rev 1
page 11/15
STGWA25M120DF3
TO-247 long leads package information
Table 7. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS12637 - Rev 1
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 12/15
STGWA25M120DF3
Revision history
Table 8. Document revision history
DS12637 - Rev 1
Date
Version
20-Jun-2018
1
Changes
Initial release. This part number was previously included in datasheet
DS10300.
page 13/15
STGWA25M120DF3
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS12637 - Rev 1
page 14/15
STGWA25M120DF3
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© 2018 STMicroelectronics – All rights reserved
DS12637 - Rev 1
page 15/15
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